CN110071128A - A kind of dot structure of high sensitivity Larger Dynamic range - Google Patents
A kind of dot structure of high sensitivity Larger Dynamic range Download PDFInfo
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- CN110071128A CN110071128A CN201910175287.4A CN201910175287A CN110071128A CN 110071128 A CN110071128 A CN 110071128A CN 201910175287 A CN201910175287 A CN 201910175287A CN 110071128 A CN110071128 A CN 110071128A
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- 230000035945 sensitivity Effects 0.000 title claims description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 69
- 238000009792 diffusion process Methods 0.000 claims abstract description 64
- 238000002955 isolation Methods 0.000 claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 238000005286 illumination Methods 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 230000003760 hair shine Effects 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention discloses a kind of dot structure of highly sensitive Larger Dynamic range, including shallow trench isolation STI capacitor, from clamper photodiode PPD, transmission gate TX, floating diffusion region FD and reset transistor, source follower SF, line EAC；Described to be connect from clamper photodiode PPD through transmission gate TX with floating diffusion region FD, the floating diffusion region FD is connect through source follower SF with line EAC, and connects reset transistor；It is characterized in that, the shallow trench isolation STI capacitor is made of heavy doping p-well and silica isolation channel, the top crown of the shallow trench isolation STI capacitor is connect by high dynamic range HDR switch with floating diffusion region FD, bottom crown is connected by substrate with floating diffusion region FD, to keep shallow trench isolation STI capacitor in parallel with floating diffusion region FD, to increase the capacitor upper limit of floating diffusion region FD.Present invention pixel structure noise, in terms of equally have good performance.
Description
Technical field
The present invention relates to cmos image sensor technical fields, more particularly to a kind of picture of highly sensitive Larger Dynamic range
Plain structure.
Background technique
Compared with ccd image sensor, for cmos image sensor in integrated level, power consumption etc. is with the obvious advantage, in recent years
Come according to Moore's Law, CMOS technology technology is constantly improved, so that the Pixel Dimensions of field of image sensors are towards small ruler
Very little, high performance direction is developed.
In cmos image sensor field, dynamic range and sensitivity are very important performance indicator, wherein dynamic
Range and maximum unsaturation signal and minimum detectable light intensity are closely related；Sensitivity and the conversion gain of pixel FD node have
It closes.With the development of small-sized pixel, FD node capacitor constantly reduces, so that sensitivity is constantly promoted, but full-well capacity is not
Disconnected decline, it is lower so as to cause cmos image sensor dynamic range.
To realize small-sized pixel, the dynamic range for improving imaging sensor keeps high sensitivity simultaneously, at present mainstream
Solution is mainly the following mode: using more Sensitivity Methods, i.e., additionally addition capacitor is in parallel with FD capacitor, different illumination
It is lower using different capacitors, this mode sacrifices the size and conversion gain of pixel；
Using long short exposure time technology, the program carries out the exposure of multiple different time to Same Scene, finally merges
Output under different exposure time, the program need complicated read output signal chain, cause power consumption larger.
Using logarithm photoresponse method, using the high voltage amplitude of oscillation, a job is added within the pixel in the transistor of subthreshold value
To realize the log-compressed to detected light intensity, the achievable bigger investigative range within the scope of identical voltage swing, but subthreshold
The problem of value transistor can bring under process mismatch, low light noise excessive and streaking.
Summary of the invention
In view of the technical drawbacks of the prior art, it is an object of the present invention to provide a kind of highly sensitive Larger Dynamic models
The dot structure enclosed, by way of the capacitor on floating diffusion region FD in parallel and shallow trench isolation STI Capacitor apart grid, bloom
Lower spread F D capacitor can reach the dynamic range for increasing pixel while keeping sensitivity.
The technical solution adopted to achieve the purpose of the present invention is:
A kind of dot structure of high sensitivity Larger Dynamic range, including shallow trench isolation STI capacitor, from two pole of clamper photoelectricity
Pipe PPD, transmission gate TX, floating diffusion region FD and reset transistor, source follower SF, line EAC；It is described from clamper photodiode
PPD is connect through transmission gate TX with floating diffusion region FD, and the floating diffusion region FD is connect through source follower SF with line EAC, and even
Connect reset transistor；It is characterized in that, the shallow trench isolation STI capacitor is made of heavy doping p-well and silica isolation channel, it is described shallow
The top crown of trench isolations STI capacitor is connect by high dynamic range HDR switch with floating diffusion region FD, bottom crown passes through substrate
It is connected with floating diffusion region FD, to keep shallow trench isolation STI capacitor in parallel with floating diffusion region FD, to increase floating diffusion region
The capacitor upper limit of FD.
When bloom is shone, high dynamic range HDR switch is opened, from the photogenerated charge in the area clamper photodiode PPD except floating
It is flowed into shallow trench isolation STI capacitor outside dynamic diffusion region FD, it is electric after keeping floating diffusion region FD in parallel with shallow trench isolation STI capacitor
Hold and increase, so that the floating diffusion region FD unsaturation optical signal upper limit be made to improve, pixel maximum unsaturation signal increases, dynamic range
Increase.
Under low illumination, high dynamic range HDR switch is disconnected, and shallow trench isolation STI capacitor only plays buffer action, is floated and is expanded
It dissipates area FD capacitor and shines Shi Bian little with respect to bloom, the micro photo-generated carrier being collected into can be such that floating diffusion region FD voltage signal occurs
Change, and keep conversion gain big, sensitivity improves.
It is etched with a groove in the p-well of shallow trench isolation STI capacitor, one layer thin SiO2 layers of conduct is deposited in the groove
The dielectric layer of STI capacitor, then deposits one layer of heavily doped polysilicon layer again, and last silicon oxide deposition layer realizes buffer action；Weight
Doped polysilicon layer passes through high dynamic range HDR switch and floating diffusion region FD electricity as shallow trench isolation STI capacitor top crown
Hold top crown, p-well is connected as shallow trench isolation STI capacitor bottom crown, by substrate with floating diffusion region FD capacitor bottom crown
It connects.
Compared with prior art, the beneficial effects of the present invention are:
The dot structure of highly sensitive Larger Dynamic range of the invention more flexibly when low illumination, realizes charge-voltage
The region of transfer is only the floating diffusion region region FD, and floating diffusion region FD design area is smaller, can increase the sensitivity of pixel；It is high
When illumination, floating diffusion region FD capacitor and shallow trench isolation STI capacitor increase the unsaturation optical signal upper limit, dynamic range
It can improve；Do not increase additional electric while improving dynamic range and perhaps increase floating diffusion region FD region area, utilizes shallow trench
The capacitance characteristic of isolation STI capacitor itself, make the dot structure noise, in terms of equally have good performance.
Detailed description of the invention
Fig. 1 is the structure chart of the dot structure of highly sensitive Larger Dynamic range proposed by the present invention.
Fig. 2 is the working timing figure of the dot structure of highly sensitive Larger Dynamic range of the invention.
Fig. 3 is shallow trench isolation capacitor sectional view.
Specific embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, the dot structure of present invention high sensitivity Larger Dynamic range, is changed on the basis of 4T active pixel
And then, including shallow trench isolation STI capacitor (101), from clamper photodiode PPD (102), transmission gate TX (103), float
Diffusion region FD (104) and reset transistor (105), high dynamic range HDR switch (106), source follower SF (107), line EAC
(108)。
Wherein, transmission gate TX (103), reset transistor (105), HDR switch (106), source follower (107), line EAC (108)
It is NMOS transistor, transmission gate TX (103) is controlled by transmission signal TX, and reset transistor (105) is controlled by reset signal RST, high
Dynamic range HDR switch is controlled by HDR signal, and line EAC is controlled by row selects signal SEL.
It is made of from clamper photodiode PPD (102) the surface area clamped floor P+, N- buried layer and P type substrate, ambient light letter
It is absorbed after number being incident on Pixel surface from the clamper area photodiode PPD, Intrinsic Gettering occurs, generates photo-generate electron-hole
Right, light induced electron is attracted in N buried layer under the electric field action of barrier region；Transmission gate TX (103) is controlled from clamper photodiode
Transfer of the light induced electron of PPD (102) to (104) floating diffusion region FD, unlatching when adding high pressure on grid, when low pressure, close.It floats
Diffusion region FD is the area heavy doping N+, and potential is higher, and light induced electron enters floating diffusion region FD after transmission gate TX (103) is opened, and is changed
Become the potential on the FD of floating diffusion region, this change can be transmitted on line EAC (108) in the form of voltage signal, and via row
Choosing pipe (108) output.
Shallow trench isolation STI capacitor (101) is made of heavy doping p-well and silica isolation channel.In traditional 4T active pixel
In for pixel to be isolated, prevent the signal cross-talk between pixel, utilize its capacitance characteristic in the present invention, top crown passes through high dynamic
Range HDR switch (106) is connect with floating diffusion region FD (104), and bottom crown passes through substrate and floating diffusion region FD (104) phase
Even, it is in parallel with floating diffusion region FD (104) to be equivalent to shallow trench isolation STI capacitor (101) for this, increases floating diffusion region FD
(104) the capacitor upper limit.
To realize highly sensitive design, floating diffusion region FD boil down to only reserves the position of a contact hole area；
Key of the invention is that while guaranteeing pixel high sensitivity, shallow ridges is utilized in the case where not increasing extra capacitor
The dynamic range of slot isolation STI capacitor (101) raising small-sized pixel.
It is changed on the basis of traditional 4T dot structure shallow trench isolation STI capacitor, to guarantee not to from clamper light
Electric diode PPD causes in region crosstalk, and shallow trench isolation STI capacitor sectional view of the present invention is as shown in Figure 3.First in p-well (301)
A groove is inside etched, deposits one layer of thin SiO in the trench2Dielectric layer of the layer (303) as shallow trench isolation STI capacitor,
Then one layer of heavily doped polysilicon layer (302) is deposited again, and last silicon oxide deposition layer (304) realizes buffer action.Heavy doping is more
Crystal silicon layer (302) is used as shallow trench isolation STI capacitor top crown, passes through high dynamic range HDR switch and floating diffusion region FD electricity
Hold top crown connection, p-well (301) is used as shallow trench isolation STI capacitor bottom crown, by under substrate and floating diffusion region FD capacitor
Pole plate is connected.
Under low illumination, high dynamic range HDR switchs (106) and disconnects, and shallow trench isolation STI capacitor (101) only plays isolation
Effect, floating diffusion region FD (104) area design is smaller, and capacitor is smaller, and a small amount of photo-generated carrier being collected into when low smooth can make
Biggish change occurs for the voltage signal of floating diffusion region FD, and conversion gain is big, and sensitivity is higher；
When bloom is shone, high dynamic range HDR switch is opened, from the photogenerated charge in the area clamper photodiode PPD except floating
It has also largely been flowed into shallow trench isolation STI capacitor outside dynamic diffusion region FD, in terms of capacitance characteristic, floating diffusion region FD and shallow trench
Capacitor increases after isolation STI capacitor is in parallel, is more difficult to reach saturation, the floating diffusion region FD unsaturation optical signal upper limit compared with traditional structure
It improves, pixel maximum unsaturation signal increases, and dynamic range increases.Therefore, structure of the invention can have both highly sensitive and big
The advantage of dynamic range.
The working timing figure of the Novel pixel is as shown in Fig. 2, the t1 moment is low light situation, high dynamic range HDR switch
Shutdown, pixel start to expose；Floating diffusion region FD is resetted when t2-t3, reset signal is transmitted to column bus through line EAC；
T4 moment, exposure are completed, and transfer tube is opened, and photogenerated charge is transferred in the FD of floating diffusion region, and are read in the form of voltage signal
Out, FD capacitor in floating diffusion region is smaller, and sensitivity is higher；When t6-t7, line EAC, reset transistor, transfer tube are fully open, will be certainly
Photogenerated charge is all transferred out in clamper photodiode PPD, to prevent from trailing；T8 moment, environment switch to bloom by low light,
High dynamic range HDR signal is height at this time, and floating diffusion region FD is connected with shallow trench isolation STI capacitor, process still with it is above-mentioned
Process is similar, is only not only transferred into the area FD in t9 moment photogenerated charge, also has part in shallow trench isolation STI capacitor transfer
It moves and is photoelectric signal and is read via line EAC.
The dot structure is more flexible, when low illumination, realizes that the region of charge-voltage transfer is only the floating diffusion region area FD
Domain, floating diffusion region FD design area is smaller, can increase the sensitivity of pixel；When bloom is shone, floating diffusion region FD capacitor and shallow
Trench isolations STI capacitor, increases the unsaturation optical signal upper limit, and dynamic range performance improves；While raising dynamic range not
Increase additional electric and perhaps increase floating diffusion region FD region area, but utilizes the capacitor of shallow trench isolation STI capacitor itself special
Property, this also make the dot structure noise, in terms of equally have good performance.
The above is only a preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of dot structure of high sensitivity Larger Dynamic range, including shallow trench isolation STI capacitor, from clamper photodiode
PPD, transmission gate TX, floating diffusion region FD and reset transistor, source follower SF, line EAC；It is described from clamper photodiode PPD
It is connect through transmission gate TX with floating diffusion region FD, the floating diffusion region FD is connect through source follower SF with line EAC, and is connected
Reset transistor；It is characterized in that, the shallow trench isolation STI capacitor is made of heavy doping p-well and silica isolation channel, the shallow ridges
The top crown of slot isolation STI capacitor by high dynamic range HDR switch connect with floating diffusion region FD, bottom crown pass through substrate and
Floating diffusion region FD is connected, to keep shallow trench isolation STI capacitor in parallel with floating diffusion region FD, to increase floating diffusion region FD
The capacitor upper limit.
2. the dot structure of high sensitivity Larger Dynamic range as described in claim 1, which is characterized in that when bloom is shone, high dynamic
Range HDR switch open, from the photogenerated charge in the area clamper photodiode PPD flowed into addition to the FD of floating diffusion region shallow trench every
Increase from capacitor after in STI capacitor, making floating diffusion region FD in parallel with shallow trench isolation STI capacitor, to make floating diffusion region
The FD unsaturation optical signal upper limit improves, and pixel maximum unsaturation signal increases, and dynamic range increases.
3. the dot structure of high sensitivity Larger Dynamic range as claimed in claim 2, which is characterized in that under low illumination, high dynamic
Range HDR switch disconnects, and shallow trench isolation STI capacitor only plays buffer action, when floating diffusion region FD capacitor shines with respect to bloom
Become smaller, the micro photo-generated carrier being collected into can make floating diffusion region FD voltage signal change, and keep conversion gain big, spirit
Sensitivity improves.
4. the dot structure of high sensitivity Larger Dynamic range as claimed in claim 2, which is characterized in that shallow trench isolation STI electricity
It is etched with a groove in the p-well of appearance, the one layer thin SiO2 layers of dielectric layer as STI capacitor is deposited in the groove, then again
One layer of heavily doped polysilicon layer is deposited, last silicon oxide deposition layer realizes buffer action；Heavily doped polysilicon layer is as shallow trench
Isolation STI capacitor top crown, by high dynamic range HDR switch and floating diffusion region FD capacitor top crown, p-well is as shallow trench
Isolation STI capacitor bottom crown is connected by substrate with floating diffusion region FD capacitor bottom crown.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910175287.4A CN110071128A (en) | 2019-03-08 | 2019-03-08 | A kind of dot structure of high sensitivity Larger Dynamic range |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910175287.4A CN110071128A (en) | 2019-03-08 | 2019-03-08 | A kind of dot structure of high sensitivity Larger Dynamic range |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112449133A (en) * | 2019-08-29 | 2021-03-05 | 天津大学青岛海洋技术研究院 | Large dynamic range pixel structure adopting pixel internal parameter adjustment technology |
| CN113382184A (en) * | 2021-06-09 | 2021-09-10 | 上海矽印科技有限公司 | Method for automatically adjusting high dynamic range pixel by gain |
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2019
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Cited By (4)
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|---|---|---|---|---|
| CN112449133A (en) * | 2019-08-29 | 2021-03-05 | 天津大学青岛海洋技术研究院 | Large dynamic range pixel structure adopting pixel internal parameter adjustment technology |
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| CN113382184A (en) * | 2021-06-09 | 2021-09-10 | 上海矽印科技有限公司 | Method for automatically adjusting high dynamic range pixel by gain |
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