CN110066533A - The insulating layer for being used to form the composition of insulating layer and being formed by it - Google Patents
The insulating layer for being used to form the composition of insulating layer and being formed by it Download PDFInfo
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- CN110066533A CN110066533A CN201910025174.6A CN201910025174A CN110066533A CN 110066533 A CN110066533 A CN 110066533A CN 201910025174 A CN201910025174 A CN 201910025174A CN 110066533 A CN110066533 A CN 110066533A
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- insulating layer
- pore
- foaming agent
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- 239000000203 mixture Substances 0.000 title claims abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000002253 acid Substances 0.000 claims abstract description 51
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 41
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 40
- 239000004088 foaming agent Substances 0.000 claims abstract description 36
- 239000003380 propellant Substances 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims description 59
- -1 silane compound Chemical group 0.000 claims description 47
- 229910000077 silane Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 150000001720 carbohydrates Chemical class 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 125000004170 methylsulfonyl group Chemical group [H]C([H])([H])S(*)(=O)=O 0.000 claims description 3
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 77
- 238000009413 insulation Methods 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000001879 gelation Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 229930006000 Sucrose Natural products 0.000 description 4
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000005720 sucrose Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 150000002016 disaccharides Chemical class 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ASEHKQZNVUOPRW-UHFFFAOYSA-N tert-butyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C(C)(C)C ASEHKQZNVUOPRW-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/63—Additives non-macromolecular organic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Silicon Polymers (AREA)
- Organic Insulating Materials (AREA)
- Insulated Conductors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
It is used to form the composition of insulating layer, including silicon dioxide gel, pore-foaming agent and hot acid propellant.The insulating layer with high resiliency and low k characteristics can be formed using the composition.
Description
Cross reference to related applications and prioity claim
This application claims the South Korea patent applications submitted on January 23rd, 2018 at Korean Intellectual Property Office (KIPO)
The priority of No.10-2018-0008279, the entire disclosure are incorporated herein by reference.
Technical field
The present invention relates to the compositions for being used to form insulating layer and the insulating layer formed by it.More specifically, the present invention relates to
And the insulating layer for being used to form the composition of insulating layer including silicon base compound or containing silicon structure and being formed by it.
Background technique
Include a large amount of wirings in semiconductor devices and display device, and further includes insulating interlayer, encapsulated layer etc.
Insulating layer so that wiring it is insulated from each other.
If the dielectric constant of insulating layer increases, parasitic capacitance may be generated between adjacent wiring, so as to cause
The failure of the circuit devcie of electronic device or such as transistor.
When semiconductor devices and display device are externally exposed impact, the damage or rupture of wiring may cause.Therefore,
The insulating layer of elasticity and shock resistance with improvement can be preferred for being effectively protected wiring.
Further, it is also possible to be used to form insulating layer with heat treatment (such as annealing, crystallization, solidification etc.).If for heat
The temperature of processing increases, then the isostructural property of such as panel substrate or semiconductor channel may change or damage.
Therefore, it may need to improve in terms of above-mentioned or develop insulating layer, and need to be used to form the combination of insulating layer
Object.
For example, KR published patent application No.2000-0003415 discloses a kind of formation porous aluminas insulating interlayer
Method, which is used to form the insulating layer of the semiconductor devices with low-k.
Summary of the invention
According to an aspect of the invention, there is provided a kind of be used to form has improved insulation, solidification and mechanical performance
Insulating layer composition.
According to an aspect of the invention, there is provided the insulating layer formed by the composition.
According to an aspect of the invention, there is provided a kind of method for forming insulating layer or wire structures, the wire structures
Including the insulating layer formed by the composition.
The above-mentioned aspect of present inventive concept will be realized by following characteristics or construction:
(1) a kind of composition for being used to form insulating layer comprising silicon dioxide gel, pore-foaming agent and hot acid propellant.
(2) according to the composition of above-mentioned (1), wherein preparing silicon dioxide gel using tertiary silane compound.
(3) according to the composition of above (2), wherein the tertiary silane compound includes the compound indicated by chemical formula 1:
[chemical formula 1]
R1Si(OR2)3
In above-mentioned chemical formula 1,
R1For hydrogen, C1-C10 alkyl, C3-C12 naphthenic base or C6-C12 aryl, and three R2 groups are each independently
C1-C10 alkyl, C3-C12 naphthenic base or C6-C12 aryl.
(4) according to the composition of above-mentioned (2), wherein being prepared together using cyclic siloxane compound and tertiary silane compound
Silicon dioxide gel.
(5) according to the composition of above-mentioned (4), wherein cyclic siloxane compound includes the chamber formed by siloxanes key.
(6) according to the composition of above-mentioned (4), wherein cyclic siloxane compound includes the compound that chemical formula 3 indicates:
[chemical formula 3]
(7) according to the composition of above-mentioned (1), wherein pore-foaming agent includes carbohydrate or derivatives thereof.
(8) according to the composition of above-mentioned (7), wherein pore-foaming agent includes the compound indicated by chemical formula 4:
[chemical formula 4]
(9) according to the composition of above-mentioned (1), wherein hot acid propellant is included under 200 DEG C or lower decomposition temperature and produces
Raw boiling point is the compound of 200 DEG C or lower acid.
(10) composition according to above-mentioned (9), wherein the hot acid propellant includes selected from by 7 to 10 table of chemical formula
At least one of the group of the compound composition shown:
[chemical formula 7]
Wherein, in chemical formula 7, Ms is mesyl,
[chemical formula 8]
[chemical formula 9]
[chemical formula 10]
Wherein, in chemical formula 8 to 10, Tf is trifluoromethane sulfonyl group.
(11) composition according to above-mentioned (1), wherein the total weight based on composition, the composition contain:
The silicon dioxide gel of 20wt% to 90wt%；The pore-foaming agent of 5wt% to 70wt%；Occur with the hot acid of 1wt% to 10wt%
Agent.
(12) a kind of insulating layer, by being formed according to the composition of above-mentioned (1) to any one of (11).
(13) a kind of method for forming insulating layer, comprising: coating includes silicon dioxide gel, pore-foaming agent and heat on substrate
The composition of acid-producing agent, to form coating；The coating is heat-treated under 300 DEG C or lower temperature.
(14) according to the method for above-mentioned (13), wherein being heat-treated the coating includes generating hole by removal pore-foaming agent.
According to exemplary implementation scheme, be used to form insulating layer composition may include silicon dioxide gel, pore-foaming agent and
Hot acid propellant.Pore-foaming agent can produce hole, to form the insulating layer with low-k (low k).
The volatilization temperature or dissociation temperature that pore-foaming agent can be reduced by the acid generated by hot acid propellant, allow to
Hole is easily induced at low temperature.Furthermore, it is possible to promote include silane group in silicon dioxide gel gelation or molten
It is swollen, so that the elastic characteristic of insulating layer can also be improved.
In some embodiments, silicon dioxide gel can be by three-dimensional silane compound and with annular siloxane structure
Silane compound formed.The porosity in insulating layer can be further increased, by cyclic siloxane compound with further
Improve elastic characteristic.
The insulating layer with low k and high resiliency characteristic may be implemented by the low-temperature setting of composition.
Detailed description of the invention
Fig. 1 to Fig. 4 is that the schematic of the method for forming insulating layer or wire structures shown accoding to exemplary embodiment cuts
Face figure.
Specific embodiment
In accordance with an exemplary embodiment of the invention, it provides including silicon dioxide gel, pore-foaming agent and hot acid propellant
Composition.The insulating layer formed by the composition is additionally provided, can have low-k and high resiliency.
<composition for forming insulating layer>
Be used to form insulating layer composition (hereinafter, being abbreviated as insulation layer composition) may include silicon dioxide gel,
Pore-foaming agent and hot acid propellant (TAG).
Silicon dioxide gel
Silicon dioxide gel may include the cross-linked structure of polymer, oligomer or silane compound.In exemplary embodiment party
In case, tertiary silane compound can be used as silane compound.
Terms used herein " tertiary silane " can indicate have and three functional groups of silicon atom bonding wherein included
Silane compound.The functional group of silane compound may include alkoxy or halogen group.In one embodiment, silane chemical combination
The functional group of object may include alkoxy.In this case, tertiary silane compound may include trialkoxy silane.
Tertiary silane compound can be indicated by following chemical formula 1.
[chemical formula 1]
R1Si(OR2)3
In above-mentioned chemical formula 1, R1It can indicate hydrogen, C1-C10 alkyl, C3-C12 naphthenic base or C6-C12 aryl.Chemical formula
Three R in 12Group each independently represents C1-C10 alkyl, C3-C12 naphthenic base or C6-C12 aryl.
Terms used herein " alkyl " include straight chained alkyl or branched alkyl (for example, branched alkyl of C3-C10).
For example, tertiary silane compound may include methyltrimethoxysilane, methyltriethoxysilane, triethoxysilicane
Alkane, hexyl trimethoxysilane, trimethoxysilane, isobutyl triethoxy silane, hexyl triethoxysilane, uncle
Butyl trimethoxy silane, t-butyltriethoxysilane, ethyl trimethoxy silane, ethyl triethoxysilane, phenyl three
Alkoxy silane etc..These can be used alone or are applied in combination.
In some embodiments, cyclic siloxane compound can be used together with tertiary silane compound.
Cyclic siloxane compound can indicate to include the chamber formed by siloxanes key (such as-Si-O-Si- key) or hole
Silicon base compound.
For example, cyclic siloxane compound may include the cubic cavity configuration indicated by following chemical formula 2.
[chemical formula 2]
In some embodiments, cyclic siloxane compound may include tertiary silane group.In this case, chemical formula
2 cavity configuration and tertiary silane group can be bonded to each other.
For example, cyclic siloxane compound may include the compound indicated by following chemical formulas 3.
[chemical formula 3]
As set forth above, it is possible to use tertiary silane compound such as trialkoxy silane as silane compound with promote crosslinking and
Gelation.In addition, cyclic siloxane compound can also be used for transit chamber to improve the elastic characteristic of polymer or cross-linked structure.Chamber
It may be embodied in polymer or cross-linked structure with hole, the dielectric constant of insulating layer further decreased.
In addition, tertiary silane compound may be used as silane compound, allow to effectively induce and annular siloxane
The crosslinking or gelation of object are closed, while preventing the self aggregation due to caused by overreaction (for example, when using quaternary aminosilane compound
When can occur).
For example, can dissolve tertiary silane compound and cyclic siloxane compound in organic solvent, it is then heated to pre-
Temperature is determined to prepare silicon dioxide gel.
Organic solvent may include the relatively low solvent of boiling point, such as methanol, ethyl alcohol, isopropanol, methyl ethyl ketone, tetrahydro furan
It mutters, acetone, ethyl acetate etc..In this case, remaining organic solvent can be at 300 DEG C or lower or 200 DEG C or more
It is easily removed at a temperature of low by solidification process, to form insulating layer.
In an exemplary embodiment, based on the total weight of insulation layer composition, the amount of silicon dioxide gel can be
In the range of 20wt% to 90wt%.If the amount of silicon dioxide gel is less than 20wt%, possibly enough bullets can not be obtained
The insulating layer of property and mechanical strength.If the amount of silicon dioxide gel is more than about 90wt%, possibly required low k can not be obtained
With the insulating layer of elastic characteristic.
Pore-foaming agent
Terms used herein " pore-foaming agent " expression can be and decomposing when heated, burning, volatilize or evaporate in layer
The middle compound for generating hole.
In the exemplary embodiment, pore-foaming agent may be embodied in insulation layer composition by generating hole come further
Reduce the dielectric constant of insulating layer.For example, being used for producing the semiconductor devices or the compound of display device can be used as pore-foaming agent.
In an exemplary embodiment, carbohydrate or derivatives thereof can be used as pore-foaming agent.In some embodiments, can make
With disaccharides or derivatives thereof, such as sucrose or sucrose acetate.
For example, pore-foaming agent may include the sucrose acetate indicated by chemical formula 4.
[chemical formula 4]
For example, the amount of pore-foaming agent can be in the range of 5wt% to 70wt%.If the amount of pore-foaming agent is less than 5wt%,
The low k characteristics of required insulating layer may be not readily available.If the amount of pore-foaming agent is more than 70wt%, the elasticity of insulating layer and
Mechanical strength may be decreased.
Hot acid propellant (TAG)
Insulation layer composition according to exemplary implementation scheme may include hot acid propellant.It can be generated from hot acid propellant
Acid is (for example, proton (H+)), and being additionally crosslinked or polymerizeing in silicon dioxide gel can be promoted by acid.
For example, can include the hydrolysis between the alkoxy of the silane compound in silicon dioxide gel by acid promotion
Or condensation.Therefore, can induce includes the polymer in silicon dioxide gel or the additional crosslinking between cross-linked structure, and
The gelation rate of silicon dioxide gel can be increased.
Therefore, though solidification process under relatively low temperature (for example, 300 DEG C or lower or 200 DEG C or lower) into
Row also may be implemented have sufficiently resilient and mechanical strength insulating layer.
In addition, the acid from hot acid propellant also can promote the decomposition of pore-foaming agent or generate hole by volatilization.For example, carbohydrate
Or derivatives thereof in include glycosidic bond can easily by acid decompose.
Therefore, the decomposition of pore-foaming agent can also be induced, in LOTES process to form the insulating layer including hole.
In an exemplary embodiment, hot acid propellant may include with about 200 DEG C or lower for generating point of acid
Solve the compound of temperature.In addition, in some embodiments, can choose hot acid propellant, so that the boiling temperature of acid can be with
Become about 200 DEG C or lower.
For example, may include the compound indicated by chemical formula 5 by the acid that hot acid propellant generates (for example, boiling point: 72 DEG C)
Or the compound indicated by chemical formula 6 (for example, boiling point: 162 DEG C)
[chemical formula 5]
[chemical formula 6]
As described above, pore-foaming agent decompose can by the acid from hot acid propellant in low temperature (for example, 200 DEG C or more
It is low) under promote, and the acid can also by evaporation easily remove.
In some embodiments, hot acid propellant may include by following formula 7 to 10 indicate compound in extremely
Few one kind.
[chemical formula 7]
In above-mentioned chemical formula 7, Ms indicates mesyl.
[chemical formula 8]
[chemical formula 9]
[chemical formula 10]
In chemical formula 8 to 10, Tf indicates trifluoromethane sulfonyl group.
For example, the total weight based on insulation layer composition, the amount of hot acid propellant can be in the range of 1wt% to 10wt%
It is interior.If the amount of hot acid propellant is less than 1wt%, gelation and the pore-foaming agent of silicon dioxide gel may be not easily accomplished
It decomposes.If the amount of hot acid propellant is more than 10wt%, may excessively generate acid leads to the uniform of the degree of cross linking and pore size distribution
Property reduce.
Insulation layer composition may further include other widely known in the prior art additives, without making dioxy
SiClx colloidal sol, the function of pore-foaming agent and hot acid propellant and interaction are deteriorated.For example, additive may include surfactant,
Sensitizer, levelling agent, defoaming agent etc..
As set forth above, it is possible to by insulation layer composition formed including can by silicon dioxide gel pore-foaming agent or chamber produce
Give birth to and have the insulating layer in the hole of low k and high resiliency characteristic.In addition, the gelation of silicon dioxide gel and the generation in hole can be by
Acid from hot acid propellant induces under low temperature (for example, about 300 DEG C or lower, or about 200 DEG C or lower), and acid can be with
Also it can volatilize and remove at low temperature.
<insulating layer and forming method thereof>
Accoding to exemplary embodiment, the method for providing the insulating layer formed by insulation layer composition and forming insulating layer.
Additionally provide a kind of method for forming the wire structures including the insulating layer.
Fig. 1 to Fig. 4 is that the schematic of the method for forming insulating layer or wire structures shown accoding to exemplary embodiment cuts
Face figure.
Referring to Fig. 1, lower wiring 110 can be formed on the substrate 100.
Substrate 100 may include such as semiconductor substrate, such as silicon substrate or germanium substrate.In some embodiments, such as
The semiconductor circuit device of transistor, capacitor etc. can be formed on the substrate 100, and can be further formed covering and partly be led
The lower insulating layer of body circuit devcie.In this case, lower wiring 110 can be formed on lower insulating layer.
Lower conductiving layer can pass through chemical vapor deposition (CVD) technique, sputtering technology, atomic layer deposition (ALD) technique etc.
It is formed, is then patterned to form lower wiring 110.
Referring to fig. 2, the insulating interlayer 120 of the lower wiring 110 of covering can be formed.It can be used according to example as described above
Property embodiment insulation layer composition formed insulating interlayer 120.
E.g., including the insulation layer composition of silicon dioxide gel, pore-foaming agent and hot acid propellant can be for example, by rotation
It applies technique, slot coated technique etc. to be coated on substrate 100 and insulating layer, it is then possible to carry out the solidification work by heat treatment
Skill is to form insulating interlayer 120.
Heat treatment can be formed under about 300 DEG C or lower or about 200 DEG C or lower temperature.By being occurred by hot acid
The acid that agent generates even if can also fully realize the gelation of silicon dioxide gel at low temperature, and can promote pore
The removal or decomposition of agent.In addition, acid can also volatilize at low temperature and remove.
The insulating layer 120 of insulation can be by the hole that is generated by pore-foaming agent and include that chamber in silicon dioxide gel is formed
For low k insulation layer.In addition, by the inclusion of silane or siloxane polymer in silicon dioxide gel, insulating interlayer 120 can be with
With improved elasticity.
Referring to Fig. 3, insulating interlayer 120 can partly be removed by wet etching process or dry method etch technology, with shape
At opening 125, the top surface of lower wiring 110 passes through 125 exposure of opening.Opening 125 can have contact hole shape, shape of through holes
Or linear channel shape etc..
Referring to Fig. 4, wiring 130. can be formed on insulating interlayer 120 for example, work can be sputtered by CVD technique
Skill, the formation such as ALD technique are sufficient filling with the upper conductive layer of opening 125.Upper conductive layer can be patterned to be formed and be routed 130.
For example, upper wiring 130 can be electrically connected to lower wiring 110 by opening 125.
As described above, insulation layer composition can be used to form the insulating interlayer 120 of semiconductor devices.Insulating interlayer 120 can
With the hole being included therein or chamber, and it can have low-k, so as to avoid due to upper wiring 130 and lower wiring
Operating trouble caused by parasitic capacitance between 110.Insulating interlayer 120 may include elastomeric silanes or silicone cross-linked structure,
To have improved endurance to external impacts.
Insulation composition can solidify at low temperature or be crosslinked, so as to prevent by being used to form insulating interlayer 120
Heat treatment to the cause thermal damage of the semiconductor circuit device on such as substrate 100.
Fig. 1 to Fig. 4 is provided only to show exemplary embodiment or embodiment, and can using insulation layer composition with
Formation includes various insulating layers or insulation system, such as protective layer, encapsulated layer etc. in semiconductor devices or display device.
Hereinafter, propose preferred embodiment the present invention is more specifically described.However, following embodiment is merely to illustrate
The present invention, and those skilled in the relevant art obviously will be understood that, can carry out various change within the scope and spirit of this invention
Become and modifies.These change and modification is reasonably included in appended claims
The preparation of silicon dioxide gel
Prepare embodiment 1: silicon dioxide gel (A-1)
Using 10g as the methyltriethoxysilane of tertiary silane compound and 10g as cyclic siloxane compound by
The compound that chemical formula 3 indicates is dissolved in 300g tetrahydrofuran.Solution is cooled to -78 DEG C, adds chloric acid and water.It will be molten
Liquid is heated to 70 DEG C, reacts 24 hours, then cools to room temperature.300g diethyl ether and 100g water is added and stirs.Pass through liquid separation
Funnel selectively obtains organic layer, then removes solvent by vacuum distillation, obtains the polymer as white powder.
Resulting polymers are dissolved in tetrahydrofuran to form clear solution, and pass through 0.5 μm of filter filtering.Into acquired solution
Water is gradually added into be settled out white powder, and is dried in vacuo to prepare silicon dioxide gel.
[chemical formula 3]
Prepare embodiment 2: silicon dioxide gel (A-2)
Other than not using cyclic siloxane compound and using 20g methyltriethoxysilane, by real with preparation
It applies the identical method of example 1 and prepares silicon dioxide gel.
Embodiment and comparative example
Use the insulation layer composition of component and its amount (wt%) preparation embodiment and comparative example as shown in Table 1 below.
[table 1]
Concrete component in table 1 is listed below.
A-1 the silicon dioxide gel in embodiment 1) is prepared
A-2 the silicon dioxide gel in embodiment 2) is prepared
B) the sucrose acetate of chemical formula 4
[chemical formula 4]
C-1) the compound of chemical formula 8
[chemical formula 8]
C-2) the compound of chemical formula 7
[chemical formula 7]
EXPERIMENTAL EXAMPLE
On silicon by the insulation layer composition spin coating of embodiment and comparative example, and in 200 DEG C of heating plate solidify 1
Hour, with formed with a thickness ofInsulating layer.The property for assessing insulating layer as follows, is as a result shown in the following table 2.
(1) measurement elasticity
Use the elasticity of each insulating layer of nano-hardness tester measurement according to examples and comparative examples.
(2) Measuring Dielectric Constant
Use the dielectric of each insulating layer of MIS (metal-insulator semiconductor (MIS)) method measurement according to examples and comparative examples
Constant.Specifically, deposited aluminum layer, and Measuring Dielectric Constant under the conditions of 1MHz on the insulating layer.
[table 2]
| Elastic (GPa) | Dielectric constant | |
| Embodiment 1 | 6.3 | 3.1 |
| Embodiment 2 | 6.8 | 3.8 |
| Comparative example 1 | 5.5 | 4.7 |
| Comparative example 2 | 4.2 | 4.2 |
Referring to above-mentioned table 2, compared with the comparative example for wherein omitting hot acid propellant, embodiment it is molten by including silica
The insulating layer that the composition of glue, pore-foaming agent and hot acid propellant is formed has improved elasticity and low-k.
In addition, in embodiment 1, showing that bigger elasticity is special using tertiary silane compound and cyclic siloxane compound
Property and lower dielectric constant.
Claims (14)
1. a kind of composition for being used to form insulating layer, including silicon dioxide gel, pore-foaming agent and hot acid propellant.
2. composition according to claim 1, wherein preparing the silicon dioxide gel using tertiary silane compound.
3. composition according to claim 2, wherein the tertiary silane compound includes the chemical combination indicated by chemical formula 1
Object:
[chemical formula 1]
R1Si(OR2)3
Wherein, in the chemical formula 1, R1For hydrogen, C1-C10 alkyl, C3-C12 naphthenic base or C6-C12 aryl, and
Three R2 groups are each independently C1-C10 alkyl, C3-C12 naphthenic base or C6-C12 aryl.
4. composition according to claim 2, wherein using cyclic siloxane compound and the tertiary silane compound one
It rises and prepares the silicon dioxide gel.
5. composition according to claim 4, wherein the cyclic siloxane compound includes being formed by siloxanes key
Chamber.
6. composition according to claim 4, wherein the cyclic siloxane compound includes the change indicated by chemical formula 3
Close object:
[chemical formula 3]
7. composition according to claim 1, wherein the pore-foaming agent includes carbohydrate or derivatives thereof.
8. composition according to claim 7, wherein the pore-foaming agent includes the compound indicated by chemical formula 4:
[chemical formula 4]
9. composition according to claim 1, wherein the hot acid propellant is included in 200 DEG C or lower decomposition temperature
It is lower to generate the compound that boiling point is 200 DEG C or lower acid.
10. composition according to claim 9, wherein the hot acid propellant includes selected from by the expression of chemical formula 7 to 10
Compound composition at least one of group:
[chemical formula 7]
Wherein, in the chemical formula 7, Ms is mesyl,
[chemical formula 8]
[chemical formula 9]
[chemical formula 10]
Wherein, in the chemical formula 8 to 10, Tf is trifluoromethane sulfonyl group.
11. composition according to claim 1, wherein the total weight based on composition, the composition include:
The silicon dioxide gel of 20wt% to 90wt%；
The pore-foaming agent of 5wt% to 70wt%；With
The hot acid propellant of 1wt% to 10wt%.
12. a kind of insulating layer, the composition as described according to claim 1 any one of -11 is formed.
13. a kind of method for forming insulating layer, comprising:
Coating includes the composition of silicon dioxide gel, pore-foaming agent and hot acid propellant to form coating on substrate；With
The coating is heat-treated under 300 DEG C or lower temperature.
14. according to the method for claim 13, wherein the heat treatment coating includes by removing the pore-foaming agent
To generate hole.
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| CN113736309A (en) * | 2020-05-29 | 2021-12-03 | 东友精细化工有限公司 | Photocurable ink composition, sealing layer, and image display device |
| CN114958085A (en) * | 2021-02-18 | 2022-08-30 | 东友精细化工有限公司 | Photocurable ink composition, sealing layer, and image display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1500846A (en) * | 2002-10-29 | 2004-06-02 | ���ǵ�����ʽ���� | Composition for preparing porous dielectric thin film containing saccharides porogen |
| CN1616468A (en) * | 2003-06-30 | 2005-05-18 | 三星电子株式会社 | Multi-functional cyclic siloxane compound, siloxane-based polymer prepared from the compound and process for preparing dielectric film by using the polymer |
| CN1629222A (en) * | 2003-10-28 | 2005-06-22 | 三星电子株式会社 | Composition for forming dielectric film and method for forming dielectric film or pattern using the composition |
| CN107229187A (en) * | 2016-03-24 | 2017-10-03 | 东友精细化工有限公司 | Colored photosensitive resin composition and the colour filter including it |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100300872B1 (en) | 1998-06-29 | 2001-10-19 | 박종섭 | Method for forming porous alumina interlayer insulating layer of semiconductor device |
| KR20050058893A (en) * | 2003-12-13 | 2005-06-17 | 삼성전자주식회사 | Multi-functional siloxane compound containing etheralkoxy group, polymer prepared from the compound and process for preparing dielectric film by using the same |
| JP5026008B2 (en) * | 2006-07-14 | 2012-09-12 | 東京応化工業株式会社 | Film-forming composition |
| KR101599954B1 (en) * | 2013-08-08 | 2016-03-04 | 제일모직 주식회사 | Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer |
| KR101812578B1 (en) * | 2015-10-21 | 2017-12-27 | 삼성에스디아이 주식회사 | The resin composition included novel polymer and organic film using the same |
-
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-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1500846A (en) * | 2002-10-29 | 2004-06-02 | ���ǵ�����ʽ���� | Composition for preparing porous dielectric thin film containing saccharides porogen |
| CN1616468A (en) * | 2003-06-30 | 2005-05-18 | 三星电子株式会社 | Multi-functional cyclic siloxane compound, siloxane-based polymer prepared from the compound and process for preparing dielectric film by using the polymer |
| CN1629222A (en) * | 2003-10-28 | 2005-06-22 | 三星电子株式会社 | Composition for forming dielectric film and method for forming dielectric film or pattern using the composition |
| CN107229187A (en) * | 2016-03-24 | 2017-10-03 | 东友精细化工有限公司 | Colored photosensitive resin composition and the colour filter including it |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113736309A (en) * | 2020-05-29 | 2021-12-03 | 东友精细化工有限公司 | Photocurable ink composition, sealing layer, and image display device |
| CN114958085A (en) * | 2021-02-18 | 2022-08-30 | 东友精细化工有限公司 | Photocurable ink composition, sealing layer, and image display device |
| CN114958085B (en) * | 2021-02-18 | 2024-03-29 | 东友精细化工有限公司 | Photocurable ink composition, encapsulation layer, and image display device |
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