CN110063529A - Secondary-atomizing device for electronic cigarette - Google Patents
Secondary-atomizing device for electronic cigarette Download PDFInfo
- Publication number
- CN110063529A CN110063529A CN201910468346.7A CN201910468346A CN110063529A CN 110063529 A CN110063529 A CN 110063529A CN 201910468346 A CN201910468346 A CN 201910468346A CN 110063529 A CN110063529 A CN 110063529A
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- hot water
- additional hot
- water radiation
- radiation wire
- resistive heater
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- 239000003571 electronic cigarette Substances 0.000 title claims abstract description 35
- 238000000889 atomisation Methods 0.000 claims abstract description 105
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 67
- 230000005855 radiation Effects 0.000 claims description 122
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 122
- 238000010276 construction Methods 0.000 claims description 55
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- 239000012528 membrane Substances 0.000 claims description 36
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000002131 composite material Substances 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 10
- 230000005619 thermoelectricity Effects 0.000 claims description 3
- 238000002663 nebulization Methods 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 241000208125 Nicotiana Species 0.000 abstract description 40
- 235000002637 Nicotiana tabacum Nutrition 0.000 abstract description 40
- 239000000443 aerosol Substances 0.000 abstract description 32
- 238000005516 engineering process Methods 0.000 abstract description 13
- 239000000779 smoke Substances 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 38
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 24
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 15
- 235000019504 cigarettes Nutrition 0.000 description 14
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- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 230000005611 electricity Effects 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 7
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- 239000004020 conductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005802 health problem Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000000391 smoking effect Effects 0.000 description 4
- 229920000742 Cotton Polymers 0.000 description 3
- 241000219146 Gossypium Species 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
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- 229910021645 metal ion Inorganic materials 0.000 description 2
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- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
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- 206010020843 Hyperthermia Diseases 0.000 description 1
- 239000008896 Opium Substances 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
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- 239000002699 waste material Substances 0.000 description 1
- 238000010618 wire wrap Methods 0.000 description 1
Classifications
-
- A24F47/008—
Abstract
The invention discloses a kind of secondary-atomizing devices for electronic cigarette, are related to electronic smoke atomizer field, including pedestal, cover board, oil inlet passage, first resistor silk, atomization stomata, second resistance silk;The first surface of pedestal and the second surface of cover board connect, and atomization cavity is formed between pedestal and cover board;Pedestal or cover board are equipped with oil inlet passage, oil inlet passage connection atomization cavity and outside;It is intracavitary that first resistor silk is distributed in atomizing space;Cover board is equipped with several atomization stomatas, and each stomata that is atomized is connected to atomization cavity;Second resistance silk is distributed in atomization stomata and electronic cigarette is sucked between mouth.The present invention has the advantages that tobacco tar atomization is more abundant, and the aerosol particle diameter difference of generation is smaller using secondary-atomizing technology.
Description
Technical field
The present invention relates to electronic smoke atomizer field more particularly to a kind of secondary-atomizing devices for electronic cigarette.
Background technique
As understanding of the people to conventional cigarette harmfulness is gradually deep, electronic cigarette is produced as a kind of electronics for imitating cigarette
Product, by means such as atomizations, after tobacco tar or prepared opium paste etc. are become steam, allowing user to suck has similar taste and sense with traditional cigarette
The smog of feel, gradually comes into market.
There are mainly two types of existing electronic smoke atomizers: the first uses the heater of metal wire wrap, and suction is had tobacco tar
Drain cotton be wrapped in metallic resistance silk, resistive heater generate high temperature be atomized tobacco tar, some drain cottons are connected with smoke grenade,
Continuously supplement tobacco tar;Using potsherd as carrier, the surface of potsherd is equipped with heater layer, makes it to cigarette another kind
Core or smoke grenade are heated, and tobacco tar is atomized on the surface of potsherd.Existing electronic smoke atomizer has the disadvantage in that
1, easily there is " quick-fried oil " phenomenon, cause to be atomized insufficient, the aerosol particle diameter difference for being atomized generation is larger, shadow
Mouthfeel is rung, and the dosage of tobacco tar is big, waste of resource.
2, power is higher, and existing electronic smoke atomizer common power 5W or more, even up to 100W need frequently to fill
Electricity, the consumption energy is more, and leads to the higher and boiling hot mouth of cigarette holder temperature;And the heated easily generation carbonization deposition of high-power lower tobacco tar
On resistance wire, lead to the variation of resistance wire resistance value and change the distribution in temperature field, most it is direct influence be exactly tobacco tar atomization
Amount cannot be controlled accurately.
3, atomization structure volume is larger, and electrothermal calefactive rate is slower.Such as on based on atomizer of the potsherd as carrier, because
The thermal coefficient of ceramic substrate is lower, causes the thermal response of atomizer slower, and user cannot reach in real time when with cigarette holder " smoking "
To the effect of sucking condensation aerosol, delay is longer, and user experience is poor.
4, in the process there are the uneven distribution in temperature field, the even dry combustion method of tobacco tar localized hyperthermia causes to add Resistant heating
Hot water radiation wire or drain cotton material occur denaturation and fall off and be inhaled into human body together as tobacco tar is atomized the aerosol to be formed, and cause
Healthy hidden danger.
Summary of the invention
The technical problems to be solved by the present invention are: existing electronic smoke atomizer tobacco tar atomization is insufficient, atomization is generated
Aerosol particle diameter difference it is larger.
The present invention is to solve above-mentioned technical problem by the following technical programs:
For the secondary-atomizing device of electronic cigarette, including pedestal (1), cover board (2), oil inlet passage (5), first resistor silk (6),
It is atomized stomata (9), second resistance silk (10);The first surface of pedestal (1) is connect with the second surface of cover board (2), pedestal (1) with
Atomization cavity is formed between cover board (2);Pedestal (1) or cover board (2) are equipped with oil inlet passage (5), oil inlet passage (5) connection atomization
Cavity and outside;It is intracavitary that first resistor silk (6) is distributed in atomizing space;Cover board (2) is equipped with several atomization stomatas (9), each to be atomized
Stomata (9) is connected to atomization cavity;Second resistance silk (10) is distributed in atomization stomata (9) and electronic cigarette is sucked between mouth.
Tobacco tar is flowed into atomization cavity by oil inlet passage, and it is molten that the heating of first resistor silk makes tobacco tar generation atomization form gas
Glue, after aerosol leads to atomization stomata, the heating of second resistance silk makes aerosol that secondary-atomizing, the aerosol after secondary-atomizing occur
Into the pipeline of electronic cigarette, then sucked by smoker.
Using secondary-atomizing technology, tobacco tar atomization is more abundant, and the aerosol particle diameter difference of generation is smaller;It is atomized simultaneously
Stomata can play the role of filter screen, and the aerosol that selectivity is formed by primary atomization intercepts the aerosol of bulky grain, guarantee
Aerosol particle after secondary-atomizing is more uniform, improves user experience;And filter screen is solved as a protection nut cap
" quick-fried oil " problem for being generated by high-power atomization;By oil inlet passage quantitative according to demand cigarette can be supplied to atomization cavity
Oil improves resource utilization, and solves wasting phenomenon.
As the technical solution of optimization, the size of the first surface of pedestal (1) is greater than the ruler of the second surface of cover board (2)
Very little, pedestal (1) is superimposed to form step structure with cover board (2).
Step structure design keeps the overall dimensions of atomizer smaller, and integrated level is higher;Lead is convenient, the electricity of first resistor silk
Pole lead can be directly led out and the exposed first surface in pedestal, reduces the bending of contact conductor, the damage to contact conductor
It is small;The processing is simple, without to pedestal or cover board punching can extraction electrode lead, simplify processing technology, reduce manufacture week
Phase and cost.
As the technical solution of optimization, pedestal (1) includes the first substrate, the first support construction, the first support construction and the
The connection of one substrate, forms insulated cavity (4) between the first support construction and the second surface of the first substrate, first resistor silk (6)
It is distributed in the first support construction;Cover board (2) includes the second support construction, shape between the first support construction and the second support construction
At atomization cavity, atomization stomata (9) is located in the second support construction.
Insulated cavity reduces scattering and disappearing for heat, improves heating efficiency;First support construction is connect with the first substrate, is added
The strong reliability of first support construction.
As the technical solution of optimization, the first substrate uses silicon-based substrate, and the first support construction, the second support construction are adopted
With the monofilm or composite membrane of silicon oxide or silicon nitride.
Using the monofilm of silicon-based substrate combination silicon oxide or silicon nitride or the form of composite membrane, can be used MEMS technology into
Row production, is manufactured and designed based on wafer scale, and mass production reduces costs, and has proposed high consistency and stability, realizes electronics
Tobacco atomizer miniaturization and integrated direction development;And it can be to avoid generation harmful substance during heating with tobacco tar mist
Change the aerosol generated and suck human body together, brings health problem.
As the technical solution of optimization, cover board (2) further includes the second substrate, and the second support construction is connect with the second substrate,
Fog water content (8) are formed between second support construction and the second surface of the second substrate, fog water content (8) is by the second of the second substrate
The groove structure that surface is recessed to its first surface.
Fog water content is set, and the first support construction can be planar structure or groove structure, be capable of forming atomization cavity;The
Two support constructions are connect with the second substrate, strengthen the reliability of the second support construction.
As the technical solution of optimization, the first support construction is to be recessed from the first surface of the first substrate to its second surface
Groove structure, the groove structure be support slot (3);
First resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire (62), the second additional thermal resistance
Silk (63);Main resistive heater (61) is distributed in the bottom surface of support slot (3), the first additional hot water radiation wire (62), the second additional heat
Resistance wire (63) is respectively distributed to two opposite sides of support slot (3);
Or first resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire (62), the second additional heat
Resistance wire (63), the additional hot water radiation wire of third (64), the 4th additional hot water radiation wire (65);Main resistive heater (61) is distributed in branch
The bottom surface of slot (3) is supportted, the first additional hot water radiation wire (62), the second additional hot water radiation wire (63) are respectively distributed to support slot (3)
Two opposite sides, the additional hot water radiation wire of third (64), the 4th additional hot water radiation wire (65) are respectively distributed to support slot (3)
Other two opposite side.
The support slot of groove structure is conducive to carry tobacco tar, avoids the mobility due to tobacco tar and arbitrarily flows;First electricity
Resistance silk is distributed in the bottom surface and side of support slot, and heating effect is good.
As the technical solution of optimization, first resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire
(62), the second additional hot water radiation wire (63);First additional hot water radiation wire (62), main resistive heater (61), the second additional thermoelectricity
Resistance silk (63) is sequentially connected in series, the end of the first additional hot water radiation wire (62), the second additional hot water radiation wire (63) end point
The beginning and end of main resistive heater (61) are not connected;It further include four the first pins (7), four the first pins (7) are respectively
Connect the beginning of main resistive heater (61) and beginning, the second additional hot water radiation wire of end, the first additional hot water radiation wire (62)
(63) beginning;
Main resistive heater work may be selected when tobacco tar amount is less or when smoker's demand few " cigarette " in this setup
Make, that is, selects two the first pin loading currents connecting with the beginning of main resistive heater and end;When tobacco tar amount is more,
Or when smoker's demand more " cigarettes ", main resistive heater, the first additional hot water radiation wire, the second additional hot water radiation wire can be used simultaneously
Work selects two the first pins connecting with the beginning at the beginning of the first additional hot water radiation wire, the second additional hot water radiation wire
Loading current;Other first pin combinations can also be selected according to demand;By the group for selecting the first different pins
Conjunction mode realizes the combination of different heating temperature fields, and heating temperature is adjustable, realizes the controllable of atomization quantity, meets user
Demand, reach energy-saving and environment-friendly effect.
Or first resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire (62), the second additional heat
Resistance wire (63), the additional hot water radiation wire of third (64), the 4th additional hot water radiation wire (65);First additional hot water radiation wire (62), master
Resistive heater (61), the second additional hot water radiation wire (63) are sequentially connected in series, the end of the first additional hot water radiation wire (62),
The end of two additional hot water radiation wires (63) is separately connected the beginning and end of main resistive heater (61);The additional hot water radiation wire of third
(64), main resistive heater (61), the 4th additional hot water radiation wire (65) are sequentially connected in series, the additional hot water radiation wire of third (64)
End, the 4th additional hot water radiation wire (65) end be separately connected the beginning and end of main resistive heater (61);It further include six
A first pin (7), six the first pins (7) are separately connected the beginning and end, the first additional heat of main resistive heater (61)
It is the beginning of resistance wire (62), the beginning of the second additional hot water radiation wire (63), the beginning of the additional hot water radiation wire of third (64), the 4th auxiliary
The beginning of resistive heater.
Main resistive heater work may be selected when tobacco tar amount is less or when smoker's demand few " cigarette " in this setup
Make, that is, selects two the first pin loading currents connecting with the beginning of main resistive heater and end;When tobacco tar amount is more,
Or when smoker's demand more " cigarettes ", main resistive heater, the first additional hot water radiation wire, the second additional hot water radiation wire can be used simultaneously
Work selects two the first pins connecting with the beginning at the beginning of the first additional hot water radiation wire, the second additional hot water radiation wire
Loading current;Or worked at the same time using main resistive heater, the additional hot water radiation wire of third, the 4th additional hot water radiation wire, that is, it selects
Two the first pin loading currents being connect with the beginning of the beginning of the additional hot water radiation wire of third, the 4th additional hot water radiation wire;Also
Other first pin combinations can be selected according to demand;By selecting the combination of the first different pins, realize
The combination of different heating temperature fields, heating temperature is adjustable, realizes the controllable of atomization quantity, meets the needs of users, reaches
Energy-saving and environment-friendly effect.
As the technical solution of optimization, respectively atomization stomata (9) is arranged in uniform rectangular on the first surface of cover board (2)
Shape array;Second resistance silk (10) is bent into several rows using snakelike cabling, and each row second resistance silk (10) is located at rectangular
In the gap of each adjacent rows atomization stomata (9) in the shape array and outside of outermost two row atomization stomata (9);It further include two
Second pin (11), two second pins (11) are separately connected the beginning and end of second resistance silk (10);
This setup structure is simple, and each stomata periphery that is atomized can be cooled uniformly, and guarantees that sufficiently heating is primary
The aerosol of atomization.
Or respectively atomization stomata (9) is arranged in uniform rectangular array on the first surface of cover board (2);Second resistance
Silk (10) is bent into several rows using snakelike cabling, and every row second resistance silk (10) respectively corresponds a line mist in rectangular array
Change stomata (9);Snakelike cabling is respectively adopted again and is bent into several columns, each column second resistance silk (10) for every row second resistance silk (10)
It is located in the gap of each adjacent atomization stomata (9) of corresponding row;It further include two second pins (11), two second pins
(11) beginning and end of second resistance silk (10) are separately connected;
This setup be sufficiently heated the periphery of each atomization stomata can, and can guarantee temperature in strainer knot
The aerosol of the uniformity being distributed on structure, atomization being capable of fully secondary-atomizing, and one be atomized when through atomization stomata
Cause property improves, and improves mouthfeel, improves the experience of user.
Or respectively atomization stomata (9) is arranged in uniform circular array on the first surface of cover board (2);Second resistance silk
(10) several circles are bent into, every circle second resistance silk (10) is located at the atomization of each adjacent turn in circular array stomata (9)
In the gap and outer ring of outermost circle atomization stomata (9);Second resistance silk (10) is divided into inner ring resistive heater (101), outer
It enclosing resistive heater (102), inner ring resistive heater (101) is to enclose successively outside several circles from most interior one in circular array,
Outer ring resistive heater (102) is remaining each circle being centered around except inner ring resistive heater (101), inner ring resistive heater
(101) it is connected in series with outer ring resistive heater (102);It further include four second pins (11), four second pins (11) point
It Lian Jie not the beginning of inner ring resistive heater (101) and the beginning and end of end, outer ring resistive heater (102).
When aerosol of this setup after primary atomization is less or when smoker's demand few " cigarette ", it may be selected interior
Resistive heater work is enclosed, i.e., two second pins that selection is connect with the beginning of inner ring resistive heater and end load electricity
Stream, the atomizing effect of inner circle area is good at this time, and the temperature of outer collar region is not atomized close to room temperature, prevents aerosol
Pass through, control the amount that aerosol passes through, be suitble to low cigarette user, while energy conservation and environmental protection, avoid wasting;After primary atomization
When aerosol is more or when smoker's demand more " cigarettes ", inner ring resistive heater, outer ring resistive heater work simultaneously may be selected
Make, that is, selects two second pin loading currents connecting with the beginning of outer ring resistive heater and end.It can also be according to need
Seek the other second pin combinations of selection;By selecting the combination of different second pins, different heating is realized
The combination in temperature field, heating temperature is adjustable, realizes the controllable of atomization quantity, meets the needs of users, and reaches energy-saving and environment-friendly
Effect.
As the technical solution of optimization, first resistor silk (6), second resistance silk (10) are the metallic resistance of membrane structure
Silk.
There is the metallic resistance silk of membrane structure good thermal response speed to improve atomization rates without any delay, and
And atomization temperature field is uniform, atomizing effect is good, improves mouthfeel.
As the technical solution of optimization, first resistor silk (6), second resistance silk (10) surface be all covered with insulation protection
Layer, insulating protective layer are the monofilm or composite membrane of silicon oxide or silicon nitride.
First resistor silk, second resistance silk are completely covered by insulating protective layer, avoid first resistor silk, second resistance
The metal ion generated when silk heating sucks human body with the aerosol that tobacco tar atomization generates together, brings health problem.
The present invention has the advantages that
1, using secondary-atomizing technology, tobacco tar atomization is more abundant, and the aerosol particle diameter difference of generation is smaller;Mist simultaneously
Filter screen can be played the role of by changing stomata, and the aerosol that selectivity is formed by primary atomization intercepts the aerosol of bulky grain, be protected
Aerosol particle after demonstrate,proving secondary-atomizing is more uniform, improves user experience;And filter screen is as a protection nut cap, solution
It has determined " quick-fried oil " problem generated by high-power atomization;It can be quantitative to atomization cavity supply according to demand by oil inlet passage
Tobacco tar improves resource utilization, and solves wasting phenomenon.
2, step structure design keeps the overall dimensions of atomizer smaller, and integrated level is higher;Lead is convenient, first resistor silk
Contact conductor can be directly led out and the exposed first surface in pedestal, the bending of contact conductor is reduced, to the damage of contact conductor
Hurt small;The processing is simple, without to pedestal or cover board punching can extraction electrode lead, simplify processing technology, reduce manufacture
Period and cost.
3, insulated cavity reduces scattering and disappearing for heat, heating efficiency is improved, in conjunction with the metallic resistance using membrane structure
Silk, realizing 15mW can allow tobacco tar to be atomized completely, reduce power.
4, using the monofilm of silicon-based substrate combination silicon oxide or silicon nitride or the form of composite membrane, MEMS technology can be used
It is made, is manufactured and designed based on wafer scale, mass production reduces costs, and has proposed high consistency and stability, realizes electricity
Sub- tobacco atomizer miniaturization and integrated direction development;And it can be to avoid generation harmful substance during heating with tobacco tar
The aerosol that atomization generates sucks human body together, brings health problem.
5, the support slot of groove structure is conducive to carry tobacco tar, avoids the mobility due to tobacco tar and arbitrarily flows;First
Resistance wire is distributed in the bottom surface and side of support slot, and heating effect is good.
6, by setting first resistor silk, the arrangement mode of second resistance silk, and different pin combinations is selected,
The combination of different heating temperature fields is realized in the distribution that can change wire temperature field, and heating temperature is adjustable, realizes mist
Change amount it is controllable, meet the needs of users, reach energy-saving and environment-friendly effect.
7, there is the metallic resistance silk of membrane structure good thermal response speed to improve atomization rates without any delay,
And atomization temperature field is uniform, and atomizing effect is good, improves mouthfeel.
8, first resistor silk, second resistance silk are completely covered by insulating protective layer, avoid first resistor silk, the second electricity
The metal ion generated when resistance silk heating sucks human body with the aerosol that tobacco tar atomization generates together, brings health problem.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the secondary-atomizing device for electronic cigarette in the embodiment of the present invention one.
Fig. 2 is the fractionation structural representation of the secondary-atomizing device for electronic cigarette in the embodiment of the present invention one.
Fig. 3 is the axonometric drawing of the primary atomization mechanism in the embodiment of the present invention one.
Fig. 4 is the top view of the primary atomization mechanism in the embodiment of the present invention one.
Fig. 5 is the cross-sectional view of the primary atomization mechanism in the embodiment of the present invention one.
Fig. 6 is the axonometric drawing of the secondary-atomizing mechanism in the embodiment of the present invention one.
Fig. 7 is the top view of the secondary-atomizing mechanism in the embodiment of the present invention one.
Fig. 8 is the bottom view of the secondary-atomizing mechanism in the embodiment of the present invention one.
Fig. 9 is the cross-sectional view of the secondary-atomizing mechanism in the embodiment of the present invention one.
Figure 10 is the top view of the primary atomization mechanism in the embodiment of the present invention two.
Figure 11 is the top view of the secondary-atomizing mechanism in the embodiment of the present invention three.
Figure 12 is the top view of the secondary-atomizing mechanism in the embodiment of the present invention four.
Specific embodiment
Embodiment one
As shown in figs 1-9, for the secondary-atomizing device of electronic cigarette, including pedestal 1, cover board 2, support slot 3, insulated cavity 4,
Oil inlet passage 5, first resistor silk 6, the first pin 7, fog water content 8, atomization stomata 9, second resistance silk 10, second pin 11.
Pedestal 1, support slot 3, insulated cavity 4, oil inlet passage 5, first resistor silk 6, the first pin 7 constitute primary atomization knot
Structure, cover board 2, fog water content 8, atomization stomata 9, second resistance silk 10, second pin 11 constitute secondary-atomizing structure.
Pedestal 1 is cuboid, and first surface, the second surface of pedestal 1 are respectively two phases that its long side is surrounded with broadside
Pair side;Cover board 2 is cuboid, and first surface, the second surface of cover board 2 are respectively two phases that its long side is surrounded with broadside
Pair side;The first surface of pedestal 1, by being bonded connection, forms mist between pedestal 1 and cover board 2 with the second surface of cover board 2
Change cavity,
Pedestal 1, the first surface of cover board 2, second surface size can be four inches, six inches or other sizes,
The size of the first surface of pedestal 1 is greater than the size of the second surface of cover board 2, and pedestal 1 is superimposed to form step structure with cover board 2.
Pedestal 1 include the first substrate, the first support construction, the first support construction be from the first surface of the first substrate to its
The groove structure of second surface recess;First substrate uses the silicon-based substrate made of the monocrystalline silicon of P/N-<100>crystal orientation, thickness
It is 300~600 μm;The outer surface of first substrate is covered with the monofilm or composite membrane of silicon oxide or silicon nitride;First support knot
Structure uses the monofilm or composite membrane of silicon oxide or silicon nitride, with a thickness of 1~5 μm.
The internal cavities of groove structure are support slot 3, and the notch of support slot 3 is connect with the first surface of the first substrate;Branch
Support slot 3 is inverted trapezoidal groove, and bottom surface is rectangle, and two sides where two long sides of bottom surface are two symmetrical isosceles
Trapezoidal, two sides where two short sides of bottom surface are two symmetrical isosceles trapezoids, and the size of bottom surface is less than notch
Size;The other shapes such as support slot 3 or inverted round stage groove structure, the groove structure of falling truncated rectangular pyramids.
Insulated cavity 4 is formed between the bottom of support slot 3 and side wall and the second surface of the first substrate, insulated cavity 4 is
Closed internal cavities or groove structure to be recessed from from the second surface of the first substrate to its first surface.
Oil inlet passage 5 is the inverted trapezoidal groove structure formed that is recessed from the first surface of pedestal 1 to its second surface, oil inlet
The bottom surface in channel 5 is rectangle, and two sides where two long sides of bottom surface are two symmetrical isosceles trapezoids, bottom surface
Length and width dimensions be less than notch length and width dimensions;Oil inlet passage 5 is located at the side of support slot 3, and one end is connected to support slot 3, separately
The outside of one end stretching cover board 2;The inner wall of oil inlet passage 5 is covered with the monofilm or composite membrane of silicon oxide or silicon nitride.
First resistor silk 6 includes main resistive heater 61, the first additional hot water radiation wire 62, the second additional hot water radiation wire 63;
Main resistive heater 61 is distributed in the rectangular bottom surface of support slot 3, the first additional hot water radiation wire 62, the second additional hot water radiation wire 63
It is respectively distributed to two opposite sides where two long sides of the bottom surface of support slot 3, the first additional hot water radiation wire 62 and
The shape and size of two additional hot water radiation wires 63 are identical;First additional hot water radiation wire 62, main resistive heater 61, the second additional heat
Resistance wire 63 is sequentially connected in series, the end of the first additional hot water radiation wire 62, the second additional hot water radiation wire 63 end connect respectively
Connect the beginning and end of main resistive heater 61;The beginning at the beginning of the first additional hot water radiation wire 62, the second additional hot water radiation wire 63
Hold respectively close to support slot 3 notch, the end of the first additional hot water radiation wire 62, the second additional hot water radiation wire 63 end difference
Close to the bottom surface of support slot 3, the two sides of the beginning and end of main resistive heater 61 respectively close to the bottom surface of support construction 2.
Main resistive heater 61, the first additional hot water radiation wire 62, the second additional hot water radiation wire 63 are all made of snakelike cabling,
Temperature can be made uniformly to divide in the bottom surface of support slot 3 and side using annular cabling or other cabling modes being evenly distributed
Cloth.
First resistor silk 6 be membrane structure metallic resistance silk, material using platinum/titanium (Pt/Ti), gold/titanium (Au/Ti),
One or more of platinum/chromium (Pt/Cr), gold/chromium (Au/Cr), with a thickness of 100~300nm.
Four the first pins 7 connect main 61 beginning of resistive heater and end, the first additional thermal resistance by lead respectively
Silk 62 beginning, the second additional hot water radiation wire 63 beginning;The lead of each first pin 7 is connected from the notch edges of support slot 3
It after stretching, is stretched out below the different bottom edges of cover board 2 respectively, each first pin 7 is located at the not ipsilateral of cover board 2;Connect each first
The lead of pin 7 can also stretch out below the same bottom edge of cover board 2, and each first pin 7 is located at the same side of cover board 2.
First pin 7, the metallic resistance silk that lead is membrane structure, material use platinum/titanium (Pt/Ti), gold/titanium (Au/
Ti), one or more of platinum/chromium (Pt/Cr), gold/chromium (Au/Cr), with a thickness of 100~300nm.
Cover board 2 includes the second substrate, the second support construction, and the second support construction is planar structure, can also use groove
Structure, the second support construction are connected to the first surface of the second substrate;Second substrate uses the monocrystalline silicon by P/N-<100>crystal orientation
Manufactured silicon-based substrate, with a thickness of 300~600 μm;The outer surface of second substrate is covered with the monofilm of silicon oxide or silicon nitride
Or composite membrane;Second support construction uses the monofilm or composite membrane of silicon oxide or silicon nitride, with a thickness of 1~5 μm.
Fog water content 8 is formed between second support construction and the second surface of the second substrate, fog water content 8 is by the second substrate
The groove structure that second surface is recessed to its first surface;Fog water content 8 is trapezoidal back-off groove, and the bottom surface of fog water content 8 is rectangular
Shape, two sides where two long sides of bottom surface are two symmetrical isosceles trapezoids, two where two short sides of bottom surface
Side is two symmetrical isosceles trapezoids, and the size of bottom surface is less than the size of notch;The inner wall of fog water content 8 covers silica
Or the monofilm or composite membrane of silicon nitride.
The opening size of fog water content 8 be greater than or equal to support slot 3 opening size, to avoid in bonding process to support
The membrane structure of slot 3 damages.
Atomization cavity is formed between first support construction and the second support construction, i.e. support slot 3 is combined with fog water content 8
Form atomization cavity.
And atomizing space second support construction is equipped with several atomization stomatas 9, and each atomization stomata 9 is connected to fog water content 8, i.e.,
Chamber connection, makes the second support construction form filter structure.
Each atomization stomata 9 is arranged in uniform rectangular array on the first surface of cover board 2, can also be arranged in circle
Array, diamond shape array etc.;It is atomized stomata 9 and uses round hole, it can also be using other shapes such as square, diamond shapes;It is atomized stomata 9
Aperture be micron order, different apertures is selected to the granular size of " smoking " according to smoker.
Second resistance silk 10 is distributed on the first surface of cover board 2, if second resistance silk 10 is bent into using snakelike cabling
Dry row, each row second resistance silk 10 are located in the gap of the atomization stomata 9 of each adjacent rows in rectangular array and outermost
The outside of two rows atomization stomata 9.
Second resistance silk 10 be membrane structure metallic resistance silk, material using platinum/titanium (Pt/Ti), gold/titanium (Au/Ti),
One or more of platinum/chromium (Pt/Cr), gold/chromium (Au/Cr), with a thickness of 100~300nm.
Two second pins 11 connect the beginning and end of second resistance silk 10 by lead respectively.
Second pin 11, the metallic resistance silk that lead is membrane structure, material use platinum/titanium (Pt/Ti), gold/titanium (Au/
Ti), one or more of platinum/chromium (Pt/Cr), gold/chromium (Au/Cr), with a thickness of 100~300nm.
First resistor silk 6, second resistance silk 10 surface be all covered with insulating protective layer (not shown), insulation protection
Layer is the monofilm or composite membrane of silicon oxide or silicon nitride, with a thickness of 200~400nm.
This is used for the application method of the secondary-atomizing device of electronic cigarette are as follows:
Tobacco tar controller is connect with one end that oil inlet passage 5 stretches out outside cover board 2, it is by tobacco tar controller that tobacco tar is defeated
It is sent to oil inlet passage 5, tobacco tar flows into atomization cavity from oil inlet passage 5, and 6 electrified regulation of first resistor silk is atomized tobacco tar
Form aerosol, the aerosol of bulky grain is intercepted at filter structure, short grained aerosol by after atomization stomata 9 by the
Secondary-atomizing occurs for the heating of two resistance wires 10, and the aerosol after secondary-atomizing enters the pipeline of electronic cigarette, then by smoker
Sucking.According to the respiratory time and smoking dynamics of the user's smoking detected, using tobacco tar controller control tobacco tar it is logical enter into
The amount in oily channel 5.
The preparation method of secondary-atomizing device for electronic cigarette, comprising the following steps:
Step A prepares primary atomization structure, comprising the following steps:
Step a1, using thermal oxide perhaps plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical gas
Mutually deposition (LPCVD) or thermal oxide and plasma enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition
(LPCVD) combination, the on the first substrate monofilm or composite membrane of cvd silicon oxide or silicon nitride.
Step a2 defines the etching window of oil inlet passage 5 using photoetching process in the first surface of pedestal 1;Using reaction
Ion etching (RIE) or ion beam etching (IBE) technique, etch under the protection of photoresist and prepare in the step a1 being exposed
Silicon oxide or silicon nitride monofilm or composite membrane, formed corrosion window.
Step a3, using the anisotropic wet by potassium hydroxide solution or tetramethyl ammonium hydroxide solution as corrosive liquid
Method, perhaps by hydrofluoric acid, aqueous solution of nitric acid as the isotropism wet process of corrosive liquid or by xenon difluoride as etchant gas
Isotropism dry method, corrode pedestal 1, the control corrosion rate time prepares oil inlet passage 5, and the depth of oil inlet passage 5 is 20~40 μ
m。
Step a4, using thermal oxide perhaps plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical gas
Mutually deposition (LPCVD) or thermal oxide and plasma enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition
(LPCVD) combination, the monofilm or composite membrane of cvd silicon oxide or silicon nitride on the inner wall of oil inlet passage 5.
Step a5 defines the etching window of support slot 3 using photoetching process in the first surface of pedestal 1;Using reaction from
Son etching (RIE) or ion beam etching (IBE) technique, etches under the protection of photoresist and prepares in the step a1 being exposed
The monofilm or composite membrane of silicon oxide or silicon nitride form corrosion window.
Step a6, using the anisotropic wet by potassium hydroxide solution or tetramethyl ammonium hydroxide solution as corrosive liquid
Method, perhaps by hydrofluoric acid, aqueous solution of nitric acid as the isotropism wet process of corrosive liquid or by xenon difluoride as etchant gas
Isotropism dry method, corrode pedestal 1, the control corrosion rate time prepares support slot 3, and the depth of support slot 3 is 100~150 μm.
Step a7, using thermal oxide perhaps plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical gas
Mutually deposition (LPCVD) or thermal oxide and plasma enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition
(LPCVD) combination, the monofilm or composite membrane of cvd silicon oxide or silicon nitride on the inner wall of support slot 3.
Step a8, using spray-bonding craft combination photoetching process where the bottom surface of support slot 3 and two long sides of bottom surface
Two sides define the figure of first resistor silk 6, lead and the first pin 7;Using magnetron sputtering or electron beam evaporation process etc.
Metal coating technique metal-coated films;Photoresist and excess metal are removed using stripping technology (Lift-off), form the first electricity
Hinder silk 6, lead and the first pin 7.
Step a9, using plasma enhance chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD),
In the monofilm or composite membrane of first resistor silk 6, the surface cvd silicon oxide of lead and the first pin 7 or silicon nitride, as exhausted
Edge protective layer.
Step a10 defines the figure of the first pin 7 on the insulating protective layer prepared in step a9 using photoetching process;
Using reactive ion etching (RIE) or ion beam etching (IBE) technique, the oxidation being exposed is etched under the protection of photoresist
The monofilm or composite membrane of silicon or silicon nitride expose the first pin 7, apply for subsequent electrical connection.
Step a11 defines the etching window of insulated cavity 4 using photoetching process in the second surface of pedestal 1;Using reaction
Ion etching (RIE) or ion beam etching (IBE) technique, etch under the protection of photoresist and prepare in the step a1 being exposed
Silicon oxide or silicon nitride monofilm or composite membrane, formed corrosion window.
Step a12, using the anisotropic wet by potassium hydroxide solution or tetramethyl ammonium hydroxide solution as corrosive liquid
Method, perhaps by hydrofluoric acid, aqueous solution of nitric acid as the isotropism wet process of corrosive liquid or by xenon difluoride as etchant gas
Isotropism dry method, corrode pedestal 1, the control corrosion rate time prepares insulated cavity 4, make the first support construction with a thickness of 1
~5 μm.
Wafer obtained in step a12 is carried out scribing using scribing machine, a single mist can be obtained by step a13
Change structure.
Step B prepares secondary-atomizing structure, comprising the following steps:
Step b1, using thermal oxide perhaps plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical gas
Mutually deposition (LPCVD) or thermal oxide and plasma enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition
(LPCVD) combination, the monofilm or composite membrane of cvd silicon oxide or silicon nitride on the second substrate.
Step b2 defines second resistance silk 10, lead in the first surface of cover board 2 using spray-bonding craft combination photoetching process
With the figure of second pin 11;Using the metal coatings technique metal-coated films such as magnetron sputtering or electron beam evaporation process;Using
Stripping technology (Lift-off) removes photoresist and excess metal, forms second resistance silk 10, lead and second pin 11.
Step b3, using plasma enhance chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD),
In the surface cvd silicon oxide of second resistance silk 10, lead and second pin 11 or the monofilm or composite membrane of silicon nitride, as
Insulating protective layer.
Step b4 defines the figure of second pin 11 using photoetching process on the insulating protective layer prepared in step b3
Shape;Using reactive ion etching (RIE) or ion beam etching (IBE) technique, etching is exposed under the protection of photoresist
The monofilm or composite membrane of silicon oxide or silicon nitride expose second pin 11, apply for subsequent electrical connection.
Step b5 defines the figure of atomization stomata 9 using photoetching process in the first surface of cover board 2, is atomized stomata 9 and the
The setting of two resistance wires 10 interval;Using reactive ion etching (RIE) or ion beam etching (IBE) technique, in the protection of photoresist
It is lower to etch the monofilm or composite membrane that the silicon oxide or silicon nitride prepared in step b1 is exposed, form atomization stomata 9;Atomization
Stomata 9 can simultaneously serve as corrosion window, accelerate corrosion.
Step b6 defines the etching window of fog water content 8 using photoetching process in the second surface of cover board 2;Using reaction from
Son etching (RIE) or ion beam etching (IBE) technique, the oxygen prepared in step b1 is exposed in etching under the protection of photoresist
The monofilm or composite membrane of SiClx or silicon nitride form corrosion window.
Step b7, using the anisotropic wet by potassium hydroxide solution or tetramethyl ammonium hydroxide solution as corrosive liquid
Method, perhaps by hydrofluoric acid, aqueous solution of nitric acid as the isotropism wet process of corrosive liquid or by xenon difluoride as etchant gas
Isotropism dry method, corrode cover board 2, the control corrosion rate time prepares fog water content 8, make filter structure with a thickness of 1~5 μm.
Wafer obtained in step b7 is carried out scribing using scribing machine, single secondary-atomizing can be obtained by step b8
Structure.
Primary atomization structure is bonded by step C with secondary-atomizing structure, using following methods:
The wafer key of secondary-atomizing structure by the wafer comprising primary atomization structure and is included using wafer-level packaging technique
Encapsulation is closed, or by single primary atomization structure and single secondary-atomizing structure bonding packaging.Bonding technology uses binder key
It closes or glass paste is bonded, such technology para-linkage temperature requirement is lower, and the thermal stress that temperature change generates can be straight by solder
Connect absorption;Or be bonded using metal eutectic, such technology at a lower temperature makees the lower eutectic alloy of melting temperature
For middle dielectric layer, material molten is set to realize eutectic bonding by heating.When being bonded using metal eutectic, in primary atomization structure
Lead on one layer of passivation layer of setting it is protected, bonding position is the position on pedestal 1 other than support slot 3, makes oil inlet
5 part of channel is partially connect outside encapsulation nut cap with tobacco tar controller in encapsulation nut cap.
The production method for being used for the secondary-atomizing device of electronic cigarette is made of MEMS technology, is designed based on wafer scale
Manufacture, mass production reduce costs, and have proposed high consistency and stability, realize electronic smoke atomizer miniaturization and integrate
Change direction to develop.
Embodiment two
As shown in Figure 10, the present embodiment is for the secondary-atomizing device of electronic cigarette and the difference of embodiment one:
Support slot 3 is the connected in star of falling truncated rectangular pyramids, and bottom surface is square, and four sides are the identical isosceles trapezoid of shape,
The size of its bottom surface is less than the size of notch.
First resistor silk 6 include main resistive heater 61, the first additional hot water radiation wire 62, the second additional hot water radiation wire 63,
The additional hot water radiation wire 64 of third, the 4th additional hot water radiation wire 65;Main resistive heater 61 is distributed in the square bottom of support slot 3
Face, the first additional hot water radiation wire 62, the second additional hot water radiation wire 63 are respectively distributed to two opposite sides of support slot 3, the
Three additional hot water radiation wires 64, the 4th additional hot water radiation wire 65 are respectively distributed to other two opposite side of support slot 3, and first
The shape of additional hot water radiation wire 62, the second additional hot water radiation wire 63, the additional hot water radiation wire 64 of third, the 4th additional hot water radiation wire 65
It is identical with size;First additional hot water radiation wire 62, main resistive heater 61, the second additional hot water radiation wire 63 are sequentially connected in series,
The end of first additional hot water radiation wire 62, the second additional hot water radiation wire 63 end be separately connected the beginning of main resistive heater 61
The end and;The additional hot water radiation wire 64 of third, main resistive heater 61, four additional hot water radiation wires 65 are sequentially connected in series, and third is auxiliary
The end of resistive heater 64, the 4th additional hot water radiation wire 65 end be separately connected the beginning and end of main resistive heater 61
End;The beginning at the beginning of the first additional hot water radiation wire 62, the beginning of the second additional hot water radiation wire 63, the additional hot water radiation wire 64 of third
End, the 4th additional hot water radiation wire 65 notch of the beginning respectively close to support slot 3, the end of the first additional hot water radiation wire 62, the
The end of two additional hot water radiation wires 63, the end of the additional hot water radiation wire 64 of third, the 4th additional hot water radiation wire 65 end difference
Close to the bottom surface of support slot 3, the two sides of the beginning and end of main resistive heater 61 respectively close to the bottom surface of support construction 2.
Main resistive heater 61, the first additional hot water radiation wire 62, the second additional hot water radiation wire 63, the additional hot water radiation wire of third
64, the 4th additional hot water radiation wire 65 is all made of snakelike cabling, can also be using annular cabling or other cablings being evenly distributed
Mode is uniformly distributed temperature in the bottom surface of support slot 3 and side.
Six the first pins 7 connect the beginning and end, the first additional thermoelectricity of main resistive heater 61 by lead respectively
Hinder beginning, the 4th additional thermal resistance of the beginning of silk 62, the beginning of the second additional hot water radiation wire 63, the additional hot water radiation wire 64 of third
The beginning of silk 65.
Fog water content 8 is that truncated rectangular pyramids shape shape is buckled to groove, and the bottom surface of fog water content 8 is square, and four sides are that shape is identical
Isosceles trapezoid, the size of bottom surface is less than the size of notch.
Embodiment three
As shown in figure 11, the present embodiment is for the secondary-atomizing device of electronic cigarette and the difference of embodiment one:
Second resistance silk 10 is bent into several rows using snakelike cabling, and every row second resistance silk 10 respectively corresponds rectangle battle array
A line in column is atomized stomata 9;Snakelike cabling is respectively adopted again and is bent into several columns, the second electricity of each column for every row second resistance silk 10
Resistance silk 10 is located in the gap of each adjacent atomization stomata 9 of corresponding row.
Example IV
As shown in figure 12, the present embodiment is for the secondary-atomizing device of electronic cigarette and the difference of embodiment one:
Each atomization stomata 9 is arranged in uniform circular array on the first surface of cover board 2, and circular array divides from inside to outside
For several circles, the quantity that stomata 9 is atomized from inner ring to outer ring successively increases, is misplaced.The set-up mode of circular array increases
The quantity of atomization stomata guarantees that condensation aerosol is as more as possible and quickly move through atomization stomata, provides smoker, avoid
Temperature reduces due to time length, and aerosol is caused to liquefy.
Second resistance silk 10 is bent into several circles, and every circle second resistance silk 10 is located at each adjacent turn in circular array
It is atomized in the gap of stomata 9 and an outermost circle is atomized the outer ring of stomata 9;Diameter symmetry of the second resistance silk 10 along circular array
Distribution;The width of second resistance silk 10 is tapered by inner ring to outer ring, and the consistency of secondary-atomizing temperature can be improved.
Second resistance silk 10 divides for inner ring resistive heater 101, outer ring resistive heater 102, inner ring resistive heater 101
To enclose successively outside several circles from most interior one in circular array, outer ring resistive heater 102 is to be centered around inner ring adding thermal resistance
Remaining each circle except silk 101, inner ring resistive heater 101 and outer ring resistive heater 102 are connected in series.
Four second pins 11 connect the beginning of inner ring resistive heater 101 by lead respectively and end, outer ring are heated
The beginning and end of resistance wire 102.
Embodiment five
The present embodiment is for the secondary-atomizing device of electronic cigarette and the difference of embodiment one:
The size of the first surface of pedestal 1 is equal to the size of the second surface of cover board 2, and pedestal 1 is superimposed formation length with cover board 2
Cube structure.
One end of oil inlet passage 5 is connected to support slot 3, and the other end extends to the third surface of pedestal 1, the third table of pedestal 1
Face is connected to one of side between first surface and second surface for it.
It is set on pedestal 1 there are four through-hole, the lead of each first pin 7 of connection divides after the stretching of the notch edges of support slot 3
It is not passed through from each through-hole, each first pin 7 is located at the bottom of pedestal 1.
Embodiment six
The present embodiment is for the secondary-atomizing device of electronic cigarette and the difference of embodiment one:
For the secondary-atomizing device of electronic cigarette, including pedestal 1, cover board 2, insulated cavity 4, oil inlet passage 5, first resistor silk
6, the first pin 7, fog water content 8, atomization stomata 9, second resistance silk 10, second pin 11.
Pedestal 1, insulated cavity 4, oil inlet passage 5, first resistor silk 6, the first pin 7 constitute primary atomization structure.
First support construction is to be connected to the planar structure of the first surface of the first substrate, the first support construction and the first lining
Insulated cavity 4 is formed between the second surface at bottom.
Oil inlet passage 5 is the trapezoidal groove structure formed that is recessed from the second surface of cover board 2 to its first surface, and oil inlet is logical
The bottom surface in road 5 is rectangle, and two sides where two long sides of bottom surface are two symmetrical isosceles trapezoids, bottom surface
Size is less than the size of notch;Oil inlet passage 5 is located at the side of fog water content 8, and one end is connected to fog water content 8, and the other end extends to
The third surface of cover board 2, the third surface of cover board 2 are connected to one of side between first surface and second surface for it
Face.
First resistor silk 6 is distributed in the centre of the first support construction, can also be distributed in the side of fog water content 8, Huo Zhetong
When be distributed among the first surface of pedestal 1 and the side of fog water content 8.
First support construction and fog water content 8 are combined to form atomization cavity, and the opening size of fog water content 8 is greater than or equal to
The size of first resistor silk 6 among the first support construction.
Embodiment seven
The present embodiment is for the secondary-atomizing device of electronic cigarette and the difference of embodiment one:
For the secondary-atomizing device of electronic cigarette, including pedestal 1, cover board 2, oil inlet passage 5, first resistor silk 6, the first pin
7, fog water content 8, atomization stomata 9, second resistance silk 10, second pin 11.
Pedestal 1, oil inlet passage 5, first resistor silk 6, the first pin 7 constitute primary atomization structure.
First support construction is to be connected to the planar structure of the first surface of the first substrate, the first support construction and the first lining
Thermal insulation layer is equipped between the first surface at bottom.
First substrate uses the metal substrate for being provided with silicon-containing layer, is provided with the metal oxide substrate of silicon-containing layer or sets
It is equipped with the ceramic substrate of silicon-containing layer, the first surface of the first substrate is arranged in silicon-containing layer, and the metal substrate is, for example, aluminium substrate,
The metal oxide substrate is, for example, alumina substrate, and the silicon-containing layer is, for example, polysilicon layer or silicon oxide layer, thermal insulation layer
Using anodic aluminum oxide layer, it is thermally shielded using the porous structure of anodic aluminum oxide layer.
Oil inlet passage 5 is the trapezoidal groove structure formed that is recessed from the second surface of cover board 2 to its first surface, and oil inlet is logical
The bottom surface in road 5 is rectangle, and two sides where two long sides of bottom surface are two symmetrical isosceles trapezoids, bottom surface
Size is less than the size of notch;Oil inlet passage 5 is located at the side of fog water content 8, and one end is connected to fog water content 8, and the other end extends to
The third surface of cover board 2, the third surface of cover board 2 are connected to one of side between first surface and second surface for it
Face.
First resistor silk 6 is distributed in the centre of the first support construction, can also be distributed in the side of fog water content 8, Huo Zhetong
When be distributed among the first surface of pedestal 1 and the side of fog water content 8.
First support construction and fog water content 8 are combined to form atomization cavity, and the opening size of fog water content 8 is greater than or equal to
The size of first resistor silk 6 among the first support construction.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within principle.
Claims (10)
1. a kind of secondary-atomizing device for electronic cigarette, it is characterised in that: including pedestal (1), cover board (2), oil inlet passage (5),
First resistor silk (6), atomization stomata (9), second resistance silk (10);The first surface of pedestal (1) and the second surface of cover board (2)
Connection forms atomization cavity between pedestal (1) and cover board (2);Pedestal (1) or cover board (2) are equipped with oil inlet passage (5), oil inlet
Channel (5) connection atomization cavity and outside;It is intracavitary that first resistor silk (6) is distributed in atomizing space;Cover board (2) is if be equipped with dry nebulization
Stomata (9) is respectively atomized stomata (9) and is connected to atomization cavity;Second resistance silk (10) is distributed in atomization stomata (9) and electronic cigarette
Suck between mouth.
2. being used for the secondary-atomizing device of electronic cigarette as described in claim 1, it is characterised in that: the first surface of pedestal (1)
Size is greater than the size of the second surface of cover board (2), and pedestal (1) is superimposed to form step structure with cover board (2).
3. as described in claim 1 be used for electronic cigarette secondary-atomizing device, it is characterised in that: pedestal (1) include the first substrate,
First support construction, the first support construction are connect with the first substrate, between the first support construction and the second surface of the first substrate
It is formed insulated cavity (4), first resistor silk (6) is distributed in the first support construction;Cover board (2) includes the second support construction, the
Atomization cavity is formed between one support construction and the second support construction, atomization stomata (9) is located in the second support construction.
4. being used for the secondary-atomizing device of electronic cigarette as claimed in claim 3, it is characterised in that: the first substrate is served as a contrast using silicon substrate
Bottom, the first support construction, the second support construction are all made of the monofilm or composite membrane of silicon oxide or silicon nitride.
5. being used for the secondary-atomizing device of electronic cigarette as claimed in claim 3, it is characterised in that: cover board (2) further includes the second lining
Bottom, the second support construction are connect with the second substrate, form fog water content between the second support construction and the second surface of the second substrate
(8), fog water content (8) is the groove structure being recessed from the second surface of the second substrate to its first surface.
6. being used for the secondary-atomizing device of electronic cigarette as claimed in claim 3, it is characterised in that: the first support construction is by first
The groove structure that the first surface of substrate is recessed to its second surface, the internal cavities of groove structure are support slot (3);
First resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire (62), the second additional hot water radiation wire
(63);Main resistive heater (61) is distributed in the bottom surface of support slot (3), the first additional hot water radiation wire (62), the second additional thermoelectricity
Resistance silk (63) is respectively distributed to two opposite sides of support slot (3);
Or first resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire (62), the second additional heat
Resistance wire (63), the additional hot water radiation wire of third (64), the 4th additional hot water radiation wire (65);Main resistive heater (61) is distributed in branch
The bottom surface of slot (3) is supportted, the first additional hot water radiation wire (62), the second additional hot water radiation wire (63) are respectively distributed to support slot (3)
Two opposite sides, the additional hot water radiation wire of third (64), the 4th additional hot water radiation wire (65) are respectively distributed to support slot (3)
Other two opposite side.
7. the secondary-atomizing device as claimed in any one of claims 1 to 6 for electronic cigarette, it is characterised in that:
First resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire (62), the second additional hot water radiation wire
(63);First additional hot water radiation wire (62), main resistive heater (61), the second additional hot water radiation wire (63) are sequentially connected in series,
The end of first additional hot water radiation wire (62), the second additional hot water radiation wire (63) end be separately connected main resistive heater (61)
Beginning and end;It further include four the first pins (7), four the first pins (7) are separately connected main resistive heater (61)
Beginning and end, the beginning of the first additional hot water radiation wire (62), the second additional hot water radiation wire (63) beginning;
Or first resistor silk (6) includes main resistive heater (61), the first additional hot water radiation wire (62), the second additional thermal resistance
Silk (63), the additional hot water radiation wire of third (64), the 4th additional hot water radiation wire (65);First additional hot water radiation wire (62), main heating
Resistance wire (61), the second additional hot water radiation wire (63) are sequentially connected in series, the end of the first additional hot water radiation wire (62), second auxiliary
The end of resistive heater (63) is separately connected the beginning and end of main resistive heater (61);The additional hot water radiation wire of third
(64), main resistive heater (61), the 4th additional hot water radiation wire (65) are sequentially connected in series, the additional hot water radiation wire of third (64)
End, the 4th additional hot water radiation wire (65) end be separately connected the beginning and end of main resistive heater (61);It further include six
A first pin (7), six the first pins (7) are separately connected the beginning and end, the first additional heat of main resistive heater (61)
It is the beginning of resistance wire (62), the beginning of the second additional hot water radiation wire (63), the beginning of the additional hot water radiation wire of third (64), the 4th auxiliary
The beginning of resistive heater.
8. the secondary-atomizing device as claimed in any one of claims 1 to 6 for electronic cigarette, it is characterised in that:
Each atomization stomata (9) is arranged in uniform rectangular array on the first surface of cover board (2);Second resistance silk (10) is adopted
Several rows are bent into snakelike cabling, each row second resistance silk (10) is located at each adjacent rows atomization gas in rectangular array
In the gap in hole (9) and the outside of outermost two row atomization stomata (9);It further include two second pins (11), two second are drawn
Foot (11) is separately connected the beginning and end of second resistance silk (10);
Or respectively atomization stomata (9) is arranged in uniform rectangular array on the first surface of cover board (2);Second resistance silk
(10) several rows are bent into using snakelike cabling, every row second resistance silk (10) respectively corresponds the atomization of a line in rectangular array
Stomata (9);Snakelike cabling is respectively adopted again and is bent into several columns, each column second resistance silk (10) point for every row second resistance silk (10)
It Wei Yu not correspond in the gap of each adjacent atomization stomata (9) of row;It further include two second pins (11), two second pins
(11) beginning and end of second resistance silk (10) are separately connected;
Or respectively atomization stomata (9) is arranged in uniform circular array on the first surface of cover board (2);Second resistance silk (10)
Several circles are bent into, every circle second resistance silk (10) is located at the gap of the atomization of each adjacent turn in circular array stomata (9)
In and it is outermost one circle atomization stomata (9) outer ring;Second resistance silk (10) is divided into inner ring resistive heater (101), outer ring adds
Hot water radiation wire (102), inner ring resistive heater (101) are to enclose successively outside several circles, outer ring from most interior one in circular array
Resistive heater (102) is remaining each circle being centered around except inner ring resistive heater (101), inner ring resistive heater (101)
It is connected in series with outer ring resistive heater (102);It further include four second pins (11), four second pins (11) are separately connected
The beginning and end at the beginning and end of inner ring resistive heater (101), outer ring resistive heater (102).
9. the secondary-atomizing device as claimed in any one of claims 1 to 6 for electronic cigarette, it is characterised in that: first resistor silk
(6), second resistance silk (10) is all made of the metallic resistance silk of membrane structure.
10. the secondary-atomizing device as claimed in any one of claims 1 to 6 for electronic cigarette, it is characterised in that: first resistor silk
(6), the surface of second resistance silk (10) is all covered with insulating protective layer, and insulating protective layer uses the single layer of silicon oxide or silicon nitride
Film or composite membrane.
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CN201910468346.7A CN110063529A (en) | 2019-05-31 | 2019-05-31 | Secondary-atomizing device for electronic cigarette |
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CN201910468346.7A CN110063529A (en) | 2019-05-31 | 2019-05-31 | Secondary-atomizing device for electronic cigarette |
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CN111264903A (en) * | 2020-04-10 | 2020-06-12 | 深圳市辰昱科技有限公司 | Heating device for heating cigarette cartridge and heating non-combustible electronic cigarette |
WO2021027871A1 (en) * | 2019-08-13 | 2021-02-18 | 彭晓峰 | Novel atomization core |
WO2021136526A1 (en) * | 2020-01-03 | 2021-07-08 | 常州市派腾电子技术服务有限公司 | Heating element and preparation method therefor |
CN115191673A (en) * | 2022-08-09 | 2022-10-18 | 美满芯盛(杭州)微电子有限公司 | Manufacturing process of silicon-based atomizing core with synchronously processed atomizing hole and liquid storage cavity |
WO2023109189A1 (en) * | 2021-12-14 | 2023-06-22 | 深圳市吉迩科技有限公司 | Double-core atomizer and aerosol generating device |
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