CN110060922A - Flow path cleaning method and flow path cleaning device - Google Patents
Flow path cleaning method and flow path cleaning device Download PDFInfo
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- CN110060922A CN110060922A CN201910020056.6A CN201910020056A CN110060922A CN 110060922 A CN110060922 A CN 110060922A CN 201910020056 A CN201910020056 A CN 201910020056A CN 110060922 A CN110060922 A CN 110060922A
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- solubility parameter
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- 238000004140 cleaning Methods 0.000 title claims abstract description 221
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000002904 solvent Substances 0.000 claims abstract description 299
- 239000012530 fluid Substances 0.000 claims abstract description 81
- 230000008569 process Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000002156 mixing Methods 0.000 claims description 90
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 14
- 230000010287 polarization Effects 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000000576 coating method Methods 0.000 description 43
- 239000011248 coating agent Substances 0.000 description 35
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 34
- 239000005416 organic matter Substances 0.000 description 24
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 17
- 238000011144 upstream manufacturing Methods 0.000 description 16
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 15
- 238000012360 testing method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 230000009471 action Effects 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 239000006210 lotion Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
- Cleaning In General (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The present invention provides a kind of flow path cleaning method and flow path cleaning device that can reliably clean in a short time for the flow path to substrate supply treatment fluid.Cleaning solution is being utilized to mix multi-solvents to generate the cleaning solution in a manner of keeping solubility parameter approximate with the solubility parameter for the solvent for being constituted the treatment fluid to process below: mixed processes is implemented in the flow path cleaning method for being cleaned to treatment fluids such as substrate (W) supply resists come the flow path (20A, 20B) of the treatment fluid handled substrate；And cleaning process, the flow path (20A, 20B) of Xiang Suoshu treatment fluid supply the cleaning solution to be cleaned.Thereby, it is possible to prevent from also remaining the foreign matter in the solvent that can be dissolved in treatment fluid in flow path (20A, 20B) when supplying treatment fluid to flow path, these flow paths (20A, 20B) can be reliably cleaned in a short time.
Description
Technical field
The present invention relates to the technical field for being cleaned to the flow path of substrate supply treatment fluid.
Background technique
It is (following to record to the semiconductor crystal wafer as substrate in photoetching process in the manufacturing process of semiconductor devices
For wafer) surface supply various treatment fluids to be handled.As the processing, such as enumerates to wafer and supply resist
Form the processing of resist film.
For carrying out supplying the agent feeding device against corrosion of the processing of resist as to wafer, exist by device setting
Factory before making its work, before the type of the resist used in change device, supplies molten to the flow path of resist
Agent is cleaned, and the organic matter of the foreign matter as the wall portion that is attached to flow path is removed.The flow path of above-mentioned resist by piping,
It is set to the composition such as filter of the piping.It is, for example, mixed from the environment of surrounding in assembling device for being attached to the organic matter of flow path
Enter the organic matter into flow path or is organic matter included in resist before changing.By above-mentioned cleaning, this is prevented
Organic matter becomes particle and is attached to the wafer when supplying resist to wafer and wafer is made to generate defect.
However, becoming year by year for the benchmark of wafer defect setting strictly, even if such as with the fining of semiconductor devices
It is above-mentioned it is such carry out flow path cleaning, sufficient cleaning effect can not be obtained sometimes.In addition, sometimes will long-time such as consecutive numbers
It carries out above-mentioned flow path cleaning day, seeks the shortening of scavenging period.In addition, being described in patent document 1 by from setting
There is the lateral piping pressurized delivered solvent in the upstream of the piping of filter to remove the foreign matter in filter and piping, but seeks more
Reliably and more quickly remove the technology of foreign matter.
Patent document 1: Japanese Unexamined Patent Publication 2014-222756 bulletin
Summary of the invention
Problems to be solved by the invention
The present invention is to complete in order to solve the problems, and project is to provide one kind can be reliably in short-term
The interior technology to for being cleaned to the flow path of substrate supply treatment fluid.
The solution to the problem
Flow path cleaning method of the invention is using cleaning solution to for handling to substrate supply treatment fluid substrate
The flow path of the treatment fluid cleaned, the flow path cleaning method is characterized in that having: mixed processes, so that solubility
Parameter mixes multi-solvents with the approximate mode of solubility parameter for the solvent for constituting the treatment fluid to generate the cleaning
Liquid；And cleaning process, the flow path of Xiang Suoshu treatment fluid supply the cleaning solution to be cleaned.
Flow path cleaning device of the invention is using cleaning solution to for handling to substrate supply treatment fluid substrate
The flow path of the treatment fluid cleaned, the flow path cleaning device is characterized in that having: mixing unit, so that solubility
Parameter mixes multi-solvents with the approximate mode of solubility parameter for the solvent for constituting the treatment fluid to generate the cleaning
Liquid；Solvent supply unit is used to supply the multi-solvents to the mixing unit；And wiper mechanism, to the treatment fluid
Flow path supply the cleaning solution to be cleaned.
The effect of invention
According to the present invention, so that the solubility parameter of the solvent of the treatment fluid of solubility parameter and composition substrate is approximately square
Multi-solvents mixing is generated cleaning solution by formula, is cleaned using flow path of the cleaning solution to treatment fluid.By like this into
Row cleaning, can remove the foreign matter in treatment fluid flow path with high reliability within the shorter time.
Detailed description of the invention
Fig. 1 be include flow path cleaning device according to the present invention resist apparatus for coating structure chart.
Fig. 2 is the explanatory diagram for illustrating solubility parameter.
Fig. 3 is to indicate that circulation has the schematic diagram of the piping of resist.
Fig. 4 is to indicate that circulation has the schematic diagram of the piping of resist.
Fig. 5 is the block diagram for being set to the control unit of the resist apparatus for coating 1.
Fig. 6 is the explanatory diagram for describing the mixed method of solvent.
Fig. 7 is the action diagram for indicating the movement of the resist apparatus for coating.
Fig. 8 is the action diagram for indicating the movement of the resist apparatus for coating.
Fig. 9 is the action diagram for indicating the movement of the resist apparatus for coating.
Figure 10 is the action diagram for indicating the movement of the resist apparatus for coating.
Figure 11 is the action diagram for indicating the movement of the resist apparatus for coating.
Figure 12 is the action diagram for indicating the movement of the resist apparatus for coating.
Figure 13 is the action diagram for indicating the movement of the resist apparatus for coating.
Figure 14 is the action diagram for indicating the movement of the resist apparatus for coating.
Figure 15 is the explanatory diagram for indicating the other structures of the control unit.
Figure 16 is intended to indicate that the curve of the relationship between the solubility parameter of the solvent of solvent, cleaning solution and resist
Figure.
Figure 17 is the structure chart of the device used in evaluation test.
Figure 18 is the curve graph for indicating the result of evaluation test.
Description of symbols
W: wafer；1: resist apparatus for coating；10: control unit；11: rotary chuck；15A, 15B: resist supply nozzle；
20: piping system；31: solvent tank；45: mixer；57A~57D: flow adjustment portion.
Specific embodiment
Fig. 1 shows resist apparatus for coating 1 involved in an embodiment including flow path cleaning device of the invention.
Resist apparatus for coating 1 supplies the resist as treatment fluid to the surface of wafer W, is coated with the resist to carry out resist film
Formation.A kind of resist is selected from two kinds of resists is supplied to wafer W.Each resist includes the solvent as solvent.
Moreover, multi-solvents mixing is generated to the cleaning solution as diluent in the resist apparatus for coating 1,
The flow path that the forward direction resist of the coating process of resist is carried out to wafer W supplies the cleaning solution, carries out the cleaning of the flow path.It closes
It is molten from m kind (integer that m is 3 or more) based on information related with resist in the solvent used in the generation of cleaning solution
The n kind fewer than m kind (integer that n is 2 or more) solvent is selected in agent.Specifically, selecting two kinds of solvents in the processing example.
Also, the mixing ratio as volume ratio is also set to the solvent selected.So-called information related with resist is in the example
In refer to solvent about resist type information.
So that the Hansen Solubility Parameter of the solvent of Hansen (Hansen) solubility parameter (SP) of cleaning solution and resist
Approximate mode is selected as solvent and determine mixing ratio that above-mentioned cleaning solution uses.Above-mentioned Hansen Solubility Parameter is made
It is known to indicate one of index of property of solvent.The solubility parameter includes dispersion term, polarization item and hydrogen bond item, solvent
With these three parameter values, as shown in Fig. 2, can be with composite vector 200 come the property of regulation solvent.
Dispersion term is the energy from intermolecular dispersion force, and polarization item is the energy from intermolecular polar forces, hydrogen
Key item is the energy from intermolecular hydrogen bond force.Thus, constitute dispersion term, polarization item and the hydrogen bond item difference of solubility parameter
Nearer it is to then solvent more shows close dissolubility for arbitrary substance.In document " Hansen Solubility
Each solubility parameter is described in Parameters " (author: Hansen, Charles (2007), publisher's CRC publication)
Seek method.Moreover, if the molecular configuration of solvent determines that the value of each solubility parameter is the value uniquely determined.As long as in addition, not having
There is special record, in the present specification, solubility parameter refers to Hansen Solubility Parameter.
In the processing example, the dissolution of the solvent of the polarization item and hydrogen bond item and resist that are set as generating in solubility parameter
Spend the polarization item and the approximate cleaning solution of hydrogen bond item in parameter.When more specifically describing, with the item that will polarize in XY coordinate system
The composite vector of the solvent of the composite vector and resist of cleaning solution when being set as X-axis, hydrogen bond item being set as to Y-axis is approximate
Mode generates cleaning solution.It describes in more detail, to be expressed as, the coordinate of front end of the composite vector of cleaning solution is close to be expressed as resisting
The mode for losing the coordinate of the front end of the composite vector of the solvent of agent generates cleaning solution.
Function and effect when in order to illustrate generation cleaning solution like this, to the place of comparative example of the invention first in Fig. 3
Reason is illustrated.In Fig. 3, the piping for constituting the flow path of resist is set as 101, the longitudinal section of piping 101 is shown.Such as background
As illustrated in the project of technology, the organic matter as foreign matter is attached in piping 101 sometimes.102,103 is by planting
The organic matter that class compound different from each other is constituted.(a), (b) of Fig. 3 is shown by before supplying resist to piping 101
The example for supplying a kind of solvent, such as gamma-butyrolacton (GBL) to clean in piping 101.About the dissolubility of the GBL, if set
It is high for the dissolubility for example for organic matter 102, it is low for the dissolubility of organic matter 103, then it is only removed by the cleaning treatment
Organic matter 102, organic matter 103 are still adhered to piping 101 and remain.Moreover, about piping is supplied to after that cleaning treatment
The solvent of 101 resist, if the dissolubility being set as organic matter 103 is high, such as shown in (c) of Fig. 3, due to solvent,
Organic matter 103 is removed from piping 101, is become particle and is fed into wafer W, and the defect of wafer W is become.
Therefore, as described, solvent is mixed based on the information of resist, to have and the solvent of resist
The mode of the close solubility parameter of solubility parameter generates cleaning solution, to be supplied to piping 101 ((a), (b) of Fig. 4).About
Organic matter 103 is also high for the dissolubility of cleaning solution since the dissolubility of the solvent for resist is high.Thus, this has
Machine object 103 is cleaned liquid dissolution, is removed ((c) of Fig. 4) from piping 101.Thus, when resist is supplied to piping 101
There is the remaining state of organic matter 103 to be inhibited into, which is inhibited as particle to the attachment of wafer W.
In addition, being shown in Figure 4 for organic matter 102 is also cleaned liquid removal.Even if cleaning solution is molten for organic matter 102
Solution property it is low, after supply cleaning solution organic matter 102 be still adhered to is piped 101 and remain, due to cleaning solution dissolubility with it is against corrosion
The dissolubility of the solvent of agent is approximate, therefore resist is supplied to organic matter 102 when being piped 101 and does not also dissolve and is still adhered to this
It is piped 101 and remains.Thus, it is possible to which the organic matter 102 is inhibited to be attached to wafer W.
Using two kinds of resists for having mutually different solvent in the resist apparatus for coating 1, thus generate with it is each
The corresponding two kinds of cleaning solutions of resist.Back to Fig. 1, the structure of resist apparatus for coating 1 is illustrated.11 is will be brilliant in figure
The back side central portion of circle W remains horizontal rotary chuck.12 be rotating mechanism in figure, rotates the rotary chuck 11, thus
Rotate wafer W around vertical axis.13 be the cup for surrounding the wafer W for being placed in rotary chuck 11 in figure, and receiving is dispersed from wafer W
Liquid out.14 be the leakage fluid dram being open in cup 13 in figure.15A, 15B are resist supply nozzle in figure, respectively under vertical
Side sprays different types of resist.
Using any one resist supply nozzle in 15A, the 15B in the processing of wafer W, supplies and spray from each resist
Mouth 15A, 15B supply resist to the central part of the wafer W of rotation.By the resist since centrifugal force is from wafer W
Center portion is come to form resist film in the entire surface of wafer W to the rotary coating that peripheral part extends.It will be from resist supply nozzle
The resist that 15A sprays is set as resist A, and the resist sprayed from resist supply nozzle 15B is set as resist B.Such as
Solvent, the composition for the solvent for constituting resist B for constituting resist A are different from each other.In addition, resist supply nozzle 15A, 15B
Connect with driving mechanism (not shown) so that resist supply nozzle 15A, 15B the outside of cup 13 position and as described that
Sample moves freely between the position into the cup 13 of wafer W supply resist.
Resist supply nozzle 15A, 15B and piping system 20 connect, below to each component for constituting the piping system 20
It is illustrated.21A, 21B are resist supplying tubing in figure, are connect respectively with resist supply nozzle 15A, 15B.The resist
Supplying tubing 21A, 21B is equivalent to above-mentioned piping 101.
On resist supplying tubing 21A, valve V1, pump 22A, filter 23A, pans are disposed with towards upstream side
24A, valve V2.Resist supply nozzle 15A, resist supplying tubing 21A, valve V1, pump 22A, filter 23A, pans 24A with
And valve V2 constitutes the flow path 20A of resist A.On resist supplying tubing 21B, valve V3, pump are disposed with towards upstream side
22B, filter 23B, pans 24B, valve V4.Resist supply nozzle 15B, resist supplying tubing 21B, valve V3, pump 22B,
Filter 23B, pans 24B and valve V4 constitute the flow path 20B of resist A.
In the upstream side of valve V2, V4, resist supplying tubing 21A, 21B is collaborated each other to form collecting fitting 25, interflow
The upstream side branch of pipe 25 is formed as being piped 26A, 26B.The upstream side for being piped 26A is come via valve V5 and stores the anti-of resist A
It loses agent and supplies bottle 27A connection.The resist A being stored in resist supply bottle 27A passes through the pressurized conveying of above-mentioned pump 22A
To resist supply nozzle 15A.The resist B being stored in resist supply bottle 27B is pressurized defeated by above-mentioned pump 22B
It is sent to resist supply nozzle 15B.
It is stored with resist A in resist supply bottle 27A, is stored with resist B in resist supply bottle 27B.It is anti-
The resist A stored can be supplied to resist supplying tubing 21A, collecting fitting 25, resist supply by erosion agent supply bottle 27A
It is piped the pump 22A of 21A.By the movement of pump 22A and the on-off action of each valve, stored in resist supply bottle 27A against corrosion
Agent A is fed into resist supply nozzle 15A.By the movement of pump 22B and the on-off action of each valve, bottle is supplied in resist
The resist B stored in 27B is fed into resist supply nozzle 15B.
Collecting fitting 25 is connect with one end of piping 28, is piped 28 other end and is stored the cleaning fluid tank of already described cleaning solution
31 connections.Cleaning fluid tank 31 respectively with one end of gas supply pipe 32, one end of exhaust pipe 33, cleaning solution supplying pipe 34 one end
Connection.The other end and N of gas supply pipe 322The supply source 35 of (nitrogen) gas connects.The other end and exhaust gear of exhaust pipe 33
36 connections.Valve V7 is provided on cleaning solution supplying pipe 34.From N2The N that gas supply source 35 supplies2Gas adds in cleaning fluid tank 31
The cleaning solution stored in cleaning fluid tank 31 is supplied to via collecting fitting 25 and resist supplying tubing 21A, 21B against corrosion by pressure
Agent supply nozzle 15A, 15B.Exhaust gear 36 is by that can make as towards resist to being exhausted in cleaning fluid tank 31
The cleaning solution of supply nozzle 15A, 15B supply returns in cleaning fluid tank 31.By move back and forth cleaning solution like this come pair
The flow path 20B of the flow path 20A and resist B of resist A are cleaned.By cleaning fluid tank 31, N2Gas supply source 35 and exhaust
Mechanism 36 constitutes wiper mechanism.
The upstream side of cleaning solution supplying pipe 34 for example branches out four branches, forms piping 41 and single solvent supply pipe 42
~44.The upstream side of piping 41 to connect with mixing unit 45 via valve V11.Mixing unit 45 and solvent supply pipe 51~54 it is each under
Swim end connection.Mixing unit 45 is configured to for each solvent come from the supply of these solvent supply pipes 51~54 being for example stirred to make
It is mixed.
The upstream side of solvent supply pipe 51 is connect with the solvent feed path 55 of the factory of setting resist apparatus for coating 1.
Such as PGME (propylene glycol monomethyl ether) is supplied from the solvent feed path 55 to solvent supply pipe 51 as solvent.It is supplied in solvent
Valve V21, filter 56A, flow adjustment portion (flow controller) 57A, valve V22 are set gradually on pipe 51, to be able to carry out from this
Solvent from solvent feed path 55 to mixing unit 45 supply cutting and flow adjustment.
The upstream side of solvent supply pipe 52 successively via valve V23, filter 56B, flow adjustment portion 57B come be stored with make
For the solvent tank 61B connection of the PGMEA (propylene glycol methyl ether acetate) of solvent.The upstream side of solvent supply pipe 53 is successively via valve
V24, filter 56C, flow adjustment portion 57C are connect with the solvent tank 61C for being stored with the cyclohexanone as solvent.Solvent supply
The upstream side of pipe 54 successively via valve V25, filter 56D, flow adjustment portion 57D come be stored with the molten of GBL as solvent
The 61D connection of agent tank.Using the valve and flow adjustment portion being respectively arranged in solvent supply pipe 52~54 like this, be able to carry out from
Be stored with solvent tank 61B, 61C, 61D of solvent from each solvent to mixing unit 45 supply cutting, to the solvent of mixing unit 45
The adjustment of flow.Each flow adjustment portion 57A~57B constitutes solvent supply unit can for the flow of the solvent towards downstream side
It is adjusted independently of one another.
In addition, in solvent supply pipe 52,53,54, the upstream side of flow adjustment portion 57B, 57C, 57D with it is above-mentioned single
The upstream end of solvent supply pipe 42,43,44 is separately connected, be respectively arranged in single solvent supply pipe 42,43,44 valve V31,
V32,V33.Thus, it is configured to supplying each solvent to cleaning fluid tank 31 from solvent tank 61B, 61C, 61D via mixing unit 45
State and mutually switch around between state of the mixing unit 45 to supply each solvent to cleaning fluid tank 31.
Solvent tank 61B, 61C, 61D respectively with N2The downstream of gas supply pipe 62B, 62C, 62D connect.By from the N2Gas
Lateral solvent tank 61B, 61C, 61D are supplied respectively to N for the upstream of supply pipe 62A, 62B, 62C2Gas, to these solvent tanks 61B, 61C,
61D pressurization.It, can be to solvent supply pipe 52,53,54, the flow path of cleaning fluid tank 31 and resist A by pressurizeing like this
Each solvent of flow path 20B supply of 20A, resist B.In N2Be respectively arranged on gas supply pipe 62B, 62C, 62D valve V31, V32,
V33, the N for solvent tank 61B, 61C, 61D can be controlled2The supply of gas is cut off.In addition, in above-mentioned piping system 20
In, in order to prevent scheme and illustrate complication and be omitted a part valve and be set to the tank that solvent is stored on pipeline
Equal structural elements.
Then, the control unit 10 for being set to resist apparatus for coating 1 is illustrated referring to Fig. 5.Control unit 10 is for example by calculating
Mechanism is at 71 be bus in figure.Bus 71 and the CPU 72 of the various operations of progress, program storage unit 73, input unit 74, memory
75, working storage 76 connects.Program 77 is preserved in program storage unit 73, and order (step group) has been incorporated into the program 77,
To be able to carry out the coating of the cleaning and resist of already described resist flow path to wafer W.
By program 77 come each portion output control signal from control unit 10 to resist apparatus for coating 1.Control is anti-as a result,
Lose the movement in each portion of agent apparatus for coating 1.By program 77 come to each valve for including in piping system 20 opening and closing, be based on each stream
The movements such as the flow adjustment for measuring the solvent downstream that adjustment section carries out, the rotation of wafer W carried out based on rotating mechanism 12
It is controlled.In addition, program 77 also carries out the meter of the selection of the aftermentioned solvent used as cleaning solution and the mixing ratio of solvent
It calculates.Program 77 is stored in journey such as in the state of the storage medium being accommodated in hard disk, CD, magneto-optic disk, storage card and DVD
Sequence storage unit 73.
The value of the hydrogen bond item about various solvents, the item that polarizes is stored in memory 75.The various solvents are in addition to including
It further include that can constitute resist other than the PGME, PGMEA, cyclohexanone, GBL that constitute cleaning solution in resist apparatus for coating 1
Solvent various solvents.Working storage 76 be used for according to each value of the hydrogen bond item that is stored in memory 75 and polarization item come into
Row determines the operation of the mixing ratio of the solvent and solvent that use as cleaning solution.An example of the operation is described in detail later.Input unit
74 be mouse, keyboard, button etc., such as the operator of resist apparatus for coating 1 inputs information related with resist.Cause
And input unit 74 is structured to obtain the information acquiring section of the information.In addition, when operator provides from input unit 74
Operation when, execute aftermentioned cleaning treatment.
Illustrate the selection of solvent that the information based on above-mentioned resist carries out, constituting cleaning solution referring to Fig. 6 and mixes
The example of the decision of composition and division in a proportion.Here, to simplify the explanation, for constituting the solvent of cleaning solution, with from PGMEA, cyclohexanone and GBL
In select two kinds and be illustrated the case where being mixed into cleaning solution, but cleaning solution can be generated in a manner of comprising PGME.Fig. 6
For polarization item is expressed as X-axis in XY coordinate system, hydrogen bond item is expressed as to the figure of Y-axis, the unit of the numerical value of each axis is (J/
cm3)0.5.In the XY coordinate system, the solubility parameter of resist A, resist B, PGMEA, cyclohexanone, GBL are respectively indicated
For coordinate A (Ax, Ay), coordinate B (Bx, By), coordinate C (Cx, Cy), coordinate D (Dx, Dy), coordinate E (Ex, Ey).
Generate cleaning solution corresponding with resist A, B respectively as described above.Cleaning solution corresponding with resist A is set as
Cleaning solution A, cleaning solution corresponding with resist B is set as cleaning solution B to be illustrated.Firstly, to for generating cleaning solution A's
The determining method of the mixing ratio of the selection method and two kinds of solvents of two kinds of solvents is illustrated.Firstly, calculating above-mentioned XY
In coordinate system from coordinate A to coordinate C, each distance of coordinate D, coordinate E.Thus, calculate separately distance between coordinate AC=
{(Ax-Cx)2+(Ay-Cy)2}1/2, distance={ (Ax-Dx) between coordinate AD2+(Ay-Dy)2}1/2, distance between coordinate AE=
{(Ax-Ex)2+(Ay-Ey)2}1/2.Then, it is selected from these three calculated distances according to the sequence from short distance to long range
Two distances out.For the distance between two coordinates selected, the solvent of the coordinate used in the calculating of each distance is determined
It is set to the solvent used in the generation of cleaning solution A.Specifically, for example, if between distance > coordinate AD between coordinate AC away from
With a distance between > coordinate AE, then the distance between coordinate AD, the distance between coordinate AE are selected.Then, will be used for coordinates computed AD
Between distance the corresponding cyclohexanone of coordinate D, determine respectively with for the corresponding GBL of coordinate E at a distance between coordinates computed AE
For the solvent for generating cleaning solution A.
Then, the mixing ratio of solvent is determined in such a way that ratio of distances constant between two coordinates selected with this is corresponding.When will select
Distance is set as between a coordinate distance between distance, another coordinate, and distance between a coordinate between coordinate out: another seat
Between mark when distance=M:N,
It is calculated as blending ratio=100 × N/ (M+N) % of the corresponding solvent between a coordinate
Blending ratio=100 of corresponding solvent × M/ (M+N) % between another coordinate.
Specifically, the distance between being set as coordinate AD: when distance=3:4 between coordinate AE, it is calculated as,
Blending ratio=100 × 4/ (3+4) %=57% of cyclohexanone as solvent corresponding between coordinate AD
Blending ratio=100 × 3/ (3+4) %=43% of GBL as solvent corresponding between coordinate AE.
It determines to use to generate cleaning solution B in the same manner as the solvent and mixing ratio used to generate cleaning solution A
Solvent and mixing ratio.Thus, calculate separately between coordinate BC between distance, coordinate BD distance between distance, coordinate BE, according to distance from
It is short to long sequence and selects two distances.Then, the solvent of the coordinate used in the calculating for the distance selected is set as generating
The solvent of cleaning solution B.For example, between be set as coordinate BE between distance > coordinate BD between distance > coordinate BC apart from when, will with coordinate C,
The corresponding PGMEA of coordinate D, cyclohexanone are determined as the solvent for generating cleaning solution B.Then, it the distance between coordinate BC: sits
Between mark BD in the case where distance=1:8, mixing ratio is calculated as described below.Such solvent is carried out by above-mentioned program 77
Selection and the solvent selected mixing ratio calculating.
Ratio=100 × 8/ (1+8) %=89% of PGMEA
Ratio=100 × 1/ (1+8) %=11% of cyclohexanone
In addition, for ease of description, for resist A, B, to constitute the solvent of resist A, B, to be a kind of solvent carried out
Illustrate, but resist A, B can also be made of multi-solvents.In the case where constituting solvent by multi-solvents like this, such as
The type for for example constituting each solvent of the solvent, the mixing ratio of each solvent are inputted from input unit 74 as the information of resist.
Then, operation is carried out based on the solubility parameter stored in the data and memory 75 inputted as, be set separately above-mentioned
The coordinate (Ax, Ay) of resist A, resist B coordinate (Bx, By).Specifically, if being set as the molten of such as resist A
Matchmaker is solvent F (Fx, Fy) and solvent (Gx, Gy) both solvents mix, and mixing ratio is solvent F: solvent G=P:Q, then
The coordinate of resist A is calculated by following formulas 1.Even if solvent is what three kinds or more of solvent mixed, also using same
The calculating formula of sample carries out operation to set the coordinate of resist A.That is, in the feelings for the solvent that solvent is the mixing of three kinds of solvents
Under condition, the coordinate for the mixed solvent that two kinds of solvents in three kinds of solvents mix is updated in following formulas 1 and is calculated,
A kind of coordinate of solvent of residue in the coordinate of calculated mixed solvent and three kinds of solvents is updated to following formulas 1 to carry out
Calculating.
Ax=((PFx+QGx)/(P+Q)), Ay=(PFy+QGy)/(P+Q)) formula 1
Then, illustrate to resist in above-mentioned referring to Fig. 7~Figure 14 for the circulation status for indicating the liquids and gases in each pipe
It loses the process for cleaning the flow path of resist in agent apparatus for coating 1 and carries out the process of the processing of wafer W after cleaning.Fig. 7~
In Figure 14, compared to the pipe of no circulation for carrying out liquids and gases, roughly shown with the pipe of liquids and gases circulation.Separately
Outside, suitably switch the open and-shut mode of the valve in piping system 20, to carry out cleaning treatment as described later and for wafer W
Resist coating process.In the drawings, the valve mark oblique line of closing is shown, to be distinguished with open valve.
Firstly, operator inputs related with resist A, resist B information, be set in it is illustrated in fig. 6 with it is against corrosion
The corresponding coordinate A of agent A and coordinate B corresponding with resist B.Then, when operator cleans since carrying out input unit 74
When the predetermined processing of processing, as illustrated in fig. 6, determine using cyclohexanone and GBL as corresponding with resist A
Cleaning solution A, and the mixing ratio of these solvents is determined as cyclohexanone: GBL=57%:43%.In addition, determining to use
The mixing ratio of these solvents is determined as PGMEA as cleaning solution B corresponding with resist B by PGMEA and cyclohexanone:
Cyclohexanone=89%:11%.
Later, such as to solvent tank 61D it pressurizes, is successively incited somebody to action via single solvent supply pipe 42, cleaning fluid tank 31
GBL in solvent tank 61D is pressed and delivered to resist supply nozzle 15A, 15B, is discharged from resist supply nozzle 15A, 15B
(Fig. 7).(step S1) is slightly cleaned to the flow path 20B of the flow path 20A of resist A and resist B as a result,.
Then, stop supplying GBL for single solvent supply pipe 42, become what solvent tank 61C and solvent tank 61D was pressurized
State.As a result, respectively from these solvent tanks 61C, 61D to mixing unit 45 supply cyclohexanone, GBL, by the mixing unit 45 by these
Solvent mixes to generate cleaning solution A.By flow adjustment portion 57C, 57D by cyclohexanone to the supply flow rate of mixing unit 45: GBL to
The supply flow rate of mixing unit 45 is set as the 57:43 as the mixing ratio determined.Cleaning solution A is fed into clearly from mixing unit 45
Washing lotion tank 31 stores (Fig. 8).
Later, stop the pressurization to solvent tank 61C, 61D, stop supplying cleaning solution A from mixing unit 45 to cleaning fluid tank 31.
Then, to pressurizeing in cleaning fluid tank 31, thus in the flow path 20A of resist A, cleaning solution A is fed into resist supply spray
Mouth 15A (Fig. 9).Then, stop the pressurization in cleaning fluid tank 31, to being exhausted in the cleaning fluid tank 31, be thus supplied to clear
The cleaning solution A in the downstream side of washing lotion tank 31 returns to cleaning fluid tank 31.Ground as has been described repeated washing liquid A is supplied to the resist
The flow path 20A (step S2) of resist A is cleaned to the recycling of cleaning fluid tank 31 to the supply of nozzle 15A, cleaning solution A.
When specifically describing the cleaning, since the dissolubility of cleaning solution A is approximate with the dissolubility of resist A, such as
The organic matter that can be dissolved as being illustrated in Figure 3 when supplying resist A is dissolved in cleaning solution A, from composition resist A's
The wall portion of flow path 20A is removed.It later, will be clear in cleaning fluid tank 31 and in flow path 20A to pressurizeing in cleaning fluid tank 31
Washing lotion A ejects removal from resist supply nozzle 15A.Thus, the organic matter in cleaning solution A is dissolved in also from resist A
Flow path 20A be removed.
Later, become the pressurized state of solvent tank 61B and solvent tank 61C, from these solvent tanks 61B, 61C to mixing unit
45 are supplied respectively to PGMEA, cyclohexanone, are mixed these solvents to generate cleaning solution B by the mixing unit 45.Pass through flow adjustment portion
57B, 57C are by PGMEA to the supply flow rate of mixing unit 45: cyclohexanone is set as mixed as what is determined to the supply flow rate of mixing unit
The 89:11 of composition and division in a proportion.The cleaning solution B generated like this is fed into cleaning fluid tank 31 from mixing unit 45 to store (Figure 10).
Later, stop supplying cleaning solution B from mixing unit 45 to cleaning fluid tank 31, to pressurizeing in cleaning fluid tank 31, stop from
Mixing unit 45 supplies cleaning solution A to cleaning fluid tank 31.Then, to pressurizeing in cleaning fluid tank 31, thus in the flow path of resist B
In 20B, cleaning solution B is fed into resist supply nozzle 15B (Figure 11).
Then, stop to the pressurization in cleaning fluid tank 31, to being exhausted in the cleaning fluid tank 31, thus make to be supplied to clear
The cleaning solution B in the downstream side of washing lotion tank 31 returns to cleaning fluid tank 31.Confession of the repeated washing liquid B to resist supply nozzle 15B
It gives, cleaning solution B cleans the flow path 20B of resist B to the recycling of cleaning fluid tank 31.When specifically describing, due to cleaning solution B
Dissolubility it is approximate with the dissolubility of resist B, therefore can be dissolved as being illustrated in Figure 3 when supplying resist B
Organic matter is dissolved in cleaning solution B, is removed from the wall portion for the flow path 20B for constituting resist B.Later, in cleaning fluid tank 31
It pressurizes, the cleaning solution B in cleaning fluid tank 31 and in flow path 20B is ejected into removal from resist supply nozzle 15B.Cause
And the organic matter being dissolved in cleaning solution B is also removed from the flow path 20B of resist B.
Later, it pressurizes to solvent tank 61B, by the PEGMEA in solvent tank 61B successively via single solvent supply pipe
42, cleaning fluid tank 31 is pressed and delivered to resist supply nozzle 15A, 15B.Then, PEMEA is supplied from these resists and is sprayed
Terminate cleaning treatment (Figure 12, step S4) after mouth 15A, 15B discharge.It is sprayed like this from resist supply nozzle 15A, 15B
PGMEA is the PGMEA sprayed like this to obtain operating personnel, checks whether and is appropriately by being checked
Cleaning.If without exception in the inspection, such as carrying out defined operation from input unit 74 by the operator of device, with
Start the resist coating process for wafer W.
Later, successively wafer W is transported in cup 13 to carry out resist coating process.In the resist coating process
In, resist A from resist supply bottle 27A be fed into it is cleaned after flow path 20A, and from resist supply nozzle 15A quilt
It is ejected into wafer W, the Lai Jinhang rotary coating (Figure 13) for being held in rotary chuck 11 and rotating.In addition, resist B by from
Resist supply bottle 27B is supplied to the flow path 20B after being cleaned, and is ejected into and is held in from resist supply nozzle 15B
Rotary chuck 11 and wafer W, the Lai Jinhang rotary coating (Figure 14) rotated.
According to the resist apparatus for coating 1, solvent is mixed, with Hansen Solubility Parameter with constituted the molten of resist A, B
The approximate mode of the Hansen Solubility Parameter of matchmaker generates cleaning solution A, B respectively.Then, it is supplied respectively by resist A, resist B
Flow path 20A, 20B of resist are given to before carrying out resist coating process, cleaning solution A, B are fed separately to resist
Flow path 20A, 20B are started the cleaning processing.Thus, inhibit to handle wafer W resist A, B be supplied to wafer W
When, the foreign matter for being attached to flow path 20A, 20B is dissolved in the solvent of resist A, B and is fed into wafer W.As a result, can
Inhibit to generate defect in wafer W.
Also, it, can since the solubility of cleaning solution A, B are approximate with the solubility of solvent of resist A, B is constituted
It is promptly removed in cleaning treatment and is fed into wafer W's in flow path 20A, 20B of supply resist A, B Shi Youcong resist
The foreign matter of risk.Thus, it is possible to realize the shortening of time needed for cleaning.Another angle is said, can reduce due to carrying out
The time of cleaning is inadequate and foreign matter is caused to be attached to the risk of wafer W.In addition, due to can as in a short time efficiently
Ground removes foreign matter, therefore can be realized the reduction of the usage amount of each solvent used in cleaning treatment.
Moreover, according to resist apparatus for coating 1, the selection of the solvent by constitute cleaning solution, and adjust selection
The mixing ratio of solvent out can make the solubility parameter of cleaning solution and the solubility parameter of the solvent of resist more approximate.Its
As a result, it is possible to more reliably remove foreign matter from flow path 20A, 20B of resist.
In addition, the step S4 of the state after the step S1 slightly cleaned about above-mentioned progress, confirmation cleaning, the solvent used
It is not limited to above-mentioned example.Also it is configured to that batch particle-counting system is arranged in resist supplying tubing 21A, 21B, is executing step
When S4, control unit 10 can detect the quantity of foreign matter according to the detection signal sent from the batch particle-counting system and by the foreign matter
Quantity be compared with threshold value.Thus, above-mentioned step S4 is not limited to be checked by operating personnel.
In addition, in the case where being set as structure that the quantity of foreign matter is compared by control unit 10 with threshold value as,
It can be, when the quantity for being determined as foreign matter is lower than threshold value, cleaning treatment can be terminated to carry out the processing of wafer W, work as judgement
When for the quantity of foreign matter being threshold value or more, such as the later movement of step S2 is executed again, continue cleaning treatment.That is,
It can be set as automatically carrying out the structure of the movement since cleaning treatment until the end of cleaning treatment.In addition, such as
It is above-mentioned when being determined as that the quantity of foreign matter is lower than threshold value like that and being able to carry out the processing of wafer W, it is also possible to control unit 10 to will
Wafer W is transported to the transport mechanism output control signal of rotary chuck 11, automatically carries out at the resist coating for wafer W
Reason.Like this, resist apparatus for coating 1 can be configured to automatically carry out since cleaning treatment at wafer W
A series of processing during managing until terminating.
In already described example, carried out based on the solubility parameter of each solvent and the solubility parameter of the solvent of resist
Operation, is chosen for use as the solvent of cleaning solution, and determines the mixing ratio of selected solvent, but is not limited to determine solvent as
Selection and mixing ratio.Figure 15 shows the control unit for being set to the other structures example as control unit of resist apparatus for coating 1
10A.As the difference of control unit 10A and control unit 10, enumerates to be provided with connecting with bus 71 and store depositing for table
Storage portion 78.The table defines the GBL, PGME, PGMEA, ring that can be fed into above-mentioned mixing unit 45 to generate cleaning solution
Between the mixing ratio of each solvent of hexanone and the hydrogen bond item and polarization item of the cleaning solution generated when being mixed with the mixing ratio
Correspondence.That is, between the solubility parameter of the mutually different cleaning solution and the cleaning solution of the mixing ratio for being stored with each solvent
Corresponding relationship.
In the case where constituting control unit 10A like this, when acquisition information related with resist and according to the information
In include information related with the mixing ratio of the type of solvent and solvent obtain hydrogen bond item and the polarization of the solvent of resist
When each value of item, the items and the hydrogen of the solvent of the resist got of hydrogen bond item and the item that polarizes are selected from the table of storage unit 78
The mixing ratio of key item, the immediate solvent of item that polarizes.Then, it is adjusted based on the mixing ratio selected as and is supplied to mixing unit 45
The flow for each solvent given thus generates cleaning solution to be cleaned.
In above-mentioned table, various settings are carried out for the mixing ratio of GBL, PGME, PGMEA, cyclohexanone, as that
It include the mixing ratio that the blending ratio of one or both of these four solvents solvent is set as to 0% in the mixing ratio of sample setting.
That is, the table, which is set to exist, selects four kinds, three kinds or two kinds solvents from above-mentioned four kinds of solvents to be mixed
The case where conjunction.That is, being configured to exist the n kind fewer than m kind is selected from m kind (m be 3 or more integer) solvent (n is
2 or more integer) solvent the case where.Thus, the table is suitable with the first data and the second data, and the first data are to be based on
The information related with resist got is below described to go out n kind from m kind (integer that m is 3 or more) described solvent selection
Solvent and it is preset, the second data are the multiple molten in order to be determined based on the information related with resist got
The mixing ratio of agent and it is preset.In addition it is also possible to be without solvent as described above by the Tabulator Setting of storage unit 78
Selection, only make the mixing ratio of four kinds of solvents according to the solvent of resist to change.Furthermore it is also possible to be an institute by Tabulator Setting
The type of the solvent used changes according to the solvent of resist, and the mixing ratio of solvent does not change according to the type of solvent.?
That is table is also configured to only include the side in the first data and the second data.
In addition, as Fig. 5, it is illustrated in fig. 6, pass through the seat of the solubility parameter based on each solvent in control unit 10
Target operation is come in the case where selecting solvent to be used, the solvent of selection is also not necessarily limited to two kinds.It can also be directed to for example above-mentioned
The coordinate of four kinds of solvents selects three kinds of solvents with the coordinate close with the coordinate of the solvent of resist to be mixed.Separately
Outside, control unit 10 is shown and set according to the solubility parameter of each solvent the example of mixing ratio, be also possible to without such
Mixing ratio setting, if carried out constitute cleaning solution solvent selection, by the solvent selected with preset
Ratio is supplied to mixing unit 45 to generate cleaning solution.Specifically, the ratio shared by for example with each solvent in cleaning solution is each other
Each solvent is supplied to mixing unit 45 to generate cleaning solution by equal mode.
Alternatively, it is also possible to be configured to for example to be used to determine resist in the memory for constituting control unit 10 or 10A
The combination of the solvent of the information and composition cleaning solution corresponding with the resist of classification respectively stores multiple with corresponding to each other.So-called use
In determining the information of classification of resist specifically such as being numbered the name of product for referring to resist or defined ID.
Moreover, it can be, when operator inputs the information of classification for determining resist, it is corresponding with the information to select composition
Cleaning solution solvent combination, the solvent of the combination is supplied to mixing unit 45 to generate cleaning solution.That is, as control
Information related with resist acquired in portion 10 processed, 10A, be not limited to above-mentioned example it is such, for determining resist
The information of the solubility parameter of solvent.Alternatively, it is also possible to be, control unit 10,10A do not obtain such letter related with resist
Breath, the operator of device manually operate device according to the resist used in resist coating process, thus will be with this
The corresponding two or more solvent of resist is supplied to mixing unit 45 to generate cleaning solution, and is supplied to the flow path of resist
20A、20B。
In addition, describe in detail by with the solvent of resist it is approximate in a manner of generate cleaning solution.It is set as in two-dimensional coordinate
The solubility ginseng of the coordinate, cleaning solution of the solubility parameter of each solvent used in the generation of cleaning solution is illustrated respectively in system
The coordinate of the solubility parameter of the solvent of several coordinate, resist.Moreover, being set as the solvent in the coordinate and resist of solvent
In the case where the distance between coordinate of the coordinate of each distance > cleaning solution between coordinate and resist, generating has and anti-
Lose the cleaning solution of the approximate solubility parameter of solubility parameter of the solvent of agent.
It is illustrated particularly referring to Figure 16.In the Figure 16, polarization item is set as X-axis, by hydrogen bond item already described
It is set as showing the coordinate of solvent 1, the coordinate of solvent 2 in the XY coordinate system of Y-axis, solvent 1,2 is mixed into cleaning solution generated
Coordinate, resist solvent coordinate.In the example shown in Figure 16, the coordinate of the solvent of the coordinate and resist of cleaning solution it
Between distance L3 be less than the coordinate of the coordinate of solvent 1 and the distance between the coordinate of the solvent L1 of resist and solvent 2 with it is against corrosion
The distance between coordinate of solvent of agent L2.Thus, it is approximate with the solubility parameter of solubility parameter and the solvent of resist
Mode is mixed multi-solvents to generate cleaning solution.Furthermore it is possible to the resist of asking multi-solvents to mix
The case where coordinate of solvent, similarly, the coordinate of the cleaning solution is calculated by already described formula 1 according to the coordinate of various solvents.Separately
Outside, preferably above-mentioned distance L3 is 6 [(J/cm3)0.5] hereinafter, more preferably 3 [(J/cm3)0.5] below.Also, as it is above-mentioned that
Sample meets already described between the coordinate of solvent each in two-dimensional coordinate system, the coordinate of solvent of resist and the coordinate of cleaning solution
Relationship.Thus, it is not limited to for X-axis, Y-axis to be set as described above polarize item, hydrogen bond item, it can also will be in X-axis, Y-axis
A side be set as dispersion term.
As above-mentioned treatment fluid, it is not limited to resist.For example, to the medical fluid for supplying insulating film formation, counnter attack
The medical fluid of film formation, the flow path of bonding agent are penetrated, is able to use the present invention to clean.Alternatively, it is also possible to which above-mentioned is resisted
Erosion agent apparatus for coating 1 is set as being not provided for the structure of resist supply bottle 27A, 27B of storage resist A, B.That is,
It is clear that device is also configured to the flow path for only carrying out the cleaning of flow path 20A, 20B without the resist processing for wafer W
Cleaning device.Furthermore, it is also possible to use resist A, against corrosion for being installed on by flow path 20A, 20B after flow path cleaning device cleaning
Agent B carries out resist coating process come the resist apparatus for coating handled in the resist apparatus for coating.Namely
It says, is not limited to for the device for carrying out flow path cleaning to be assembled into the substrate board treatment for being used to carry out the processing of substrate.
In addition, will be a variety of in a manner of being set as approximate in the solubility parameter by solubility parameter and the solvent for being constituted treatment fluid
Solvent is illustrated using Hansen Solubility Parameter as the solubility parameter when mixing, but is not limited to hansen solubility ginseng
Number.It is also possible to such as so that Hildebrand (Hildebrand), Fedors, Van Krevelen, Hoy or Small
Solubility parameter mixes multi-solvents with the approximate mode of these solubility parameters for the solvent for constituting treatment fluid clear to generate
Washing lotion.
In addition, can suitably be changed to each embodiment the present invention is not limited to already described embodiment, or will
Each embodiment is combined with each other.
(evaluation test)
Then, the evaluation test 1 carried out related to the present inventionly is illustrated.Figure 17 is shown in the evaluation test
The Sketch of the experimental provision used.Has resist supplying tubing 21A, resist supply nozzle 15A and the resist supply
To the downstream side connection of piping 21A, the upstream of resist supply the bottle 27A and resist supplying tubing 21A of resist are stored
Side connection, and valve V1, pump 22A and filter 23A are provided on resist supplying tubing 21A.The experimental provision resists
Erosion agent supplying tubing 21A is made of piping main body 17 and inspection piping 18, is checked with 18 setting of piping in the piping main body 17
On, and check with piping 18 relative to piping 17 disassembly ease of main body.
Make to circulate solvent respectively out of the state that piping main body 17 is removed multiple inspections piping 18 to carry out cleaning place
Reason.Then, the inspection cleaned piping 18 is connect with after the cleaning treatment of piping 18 in each check with piping main body 17, is made
It is piped in main body 17 checking that the solvent used in the cleaning of piping 18 is passed to, thus further progress cleaning treatment.?
In the cleaning treatment, the quantity for spraying from resist supply nozzle 15A and being attached to the particle of wafer W is measured, by this
Eight small time points that the quantity of particle is worth on the basis of being compared to as fiducial time, terminate cleaning treatment.In the fiducial time
During 4 days later, Xiang Jingyuan W supplies resist and carries out film process, in the daily morning, afternoon to being attached to by reality
The quantity for having applied the particle of the wafer W of processing measures.In addition, 80 μm or more of particle is set as measurement pair for particle
As.By supply solvent 11A or for giving solvent 11A different kinds of liquid solvents 12A or successively supplying solvent 11A and molten
To carry out above-mentioned checking, use is piped 18 cleaning treatment to agent 12A.To use the inspection after being cleaned with solvent 11A with piping 18 into
Capable test is set as evaluation test 1-1, and the inspection after being cleaned with solvent 12A will be used to be set as evaluating with the test that piping 18 carries out
1-2 is tested, the inspection after successively being cleaned with solvent 11A, solvent 12A will be used to be set as evaluation test with the test that piping 18 carries out
1-3。
The curve of Figure 18 illustrates the result of the evaluation test 1.The horizontal axis of curve graph indicates the timing of measurement particle, curve
The longitudinal axis of figure indicates the particle number measured.With in a kind of evaluation test 1-1,1-2 that solvent is cleaned, from starting to form a film
It has handled particle measured with time going by increase, has been more than benchmark after third day in evaluation test 1-1
Value, has been more than a reference value after second day in evaluation test 1-2.In contrast, being commented what is cleaned with two kinds of solvents
Valence is tested in 1-3, during measurement in the particle number that measures it is smaller than a reference value.It is therefore believed that checking with attached in piping 18
Have for solvent 11A, solvent 12A have mutually different deliquescent foreign matter, pass through cleaning in evaluation test 1-1,1-2
Processing does not completely remove foreign matter, and in resist supply, the foreign matter is dissolved by the solvent of resist, and is supplied from resist
Nozzle 15A is ejected into wafer W.According to such results presumption: in order to reliably remove the foreign matter for being attached to piping, compared to making
It is cleaned with single solvent, the solubility of the solvent of solubility parameter and resist is used as above-mentioned embodiment
The approximate cleaning solution of parameter is effective clean.
Claims (16)
1. a kind of flow path cleaning method, using cleaning solution to for supplying treatment fluid to substrate come substrate is handled this at
The flow path of reason liquid is cleaned, and the flow path cleaning method is characterized in that having:
Mixed processes, will be a variety of in a manner of keeping the solubility parameter of solubility parameter and the solvent for being constituted the treatment fluid approximate
Solvent mixes to generate the cleaning solution；And
Cleaning process, the flow path of Xiang Suoshu treatment fluid supply the cleaning solution to be cleaned.
2. flow path cleaning method according to claim 1, which is characterized in that
The solubility of the various solvents of the solubility parameter and multi-solvents of solvent based on the treatment fluid
Parameter carries out the mixed processes.
3. flow path cleaning method according to claim 2, which is characterized in that
The mixed processes include:
Solvent selection process, the solubility parameter of the solvent based on the treatment fluid and the various solvents of the multi-solvents
The solubility parameter select the n kind solvent fewer than m kind from solvent described in m kind, wherein the integer that m is 3 or more, n
For 2 or more integer；And
The process that the solvent selected is mixed to generate the cleaning solution.
4. flow path cleaning method according to claim 2 or 3, which is characterized in that
The mixed processes include:
Mixing ratio determines process, the solubility parameter of the solvent based on the treatment fluid and the multi-solvents it is various molten
The solubility parameter of agent determines the mixing ratios of the various solvents of the multi-solvents；And
The process that solvent mixing is generated into the cleaning solution with the mixing ratio determined.
5. flow path cleaning method according to claim 3 or 4, which is characterized in that
X-axis is set as based on the polarization item size that will include in the solubility parameter and will include in the solubility parameter
The coordinate of the solvent of the coordinate and treatment fluid of each solvent when hydrogen bond item size is set as Y-axis carries out the solvent choosing
It selects process or the mixing ratio determines process.
6. flow path cleaning method according to claim 1, which is characterized in that
Process including obtaining information related with the treatment fluid,
Including process below: being based on the first data, n kind solvent below is mixed to generate the cleaning solution, described first
Data are to go out the n kind fewer than m kind from solvent selection described in m kind based on the information related with treatment fluid got
The solvent below and it is preset, wherein m be 3 or more integer, n be 2 or more integer.
7. flow path cleaning method according to claim 1 or 6, which is characterized in that
Process including obtaining information related with the treatment fluid,
Including process below: being based on the second data, the multi-solvents are mixed to generate the cleaning solution, second number
According to being in order to determine the mixing ratio of the multi-solvents based on the information related with treatment fluid got and preset.
8. flow path cleaning method according to any one of claims 1 to 7, which is characterized in that
The solubility parameter is Hansen Solubility Parameter.
9. a kind of flow path cleaning device, using cleaning solution to for supplying treatment fluid to substrate come substrate is handled this at
The flow path of reason liquid is cleaned, and the flow path cleaning device is characterized in that having:
Mixing unit, will be a variety of in a manner of keeping the solubility parameter of solubility parameter and the solvent for being constituted the treatment fluid approximate
Solvent mixes to generate the cleaning solution；
Solvent supply unit is used to supply the multi-solvents to the mixing unit；And
Wiper mechanism supplies the cleaning solution to the flow path of the treatment fluid to be cleaned.
10. flow path cleaning device according to claim 9, which is characterized in that
It is provided with control unit, which obtains the information for determining the solubility parameter of the solvent of the treatment fluid,
Control unit output control signal, with the solubility parameter of the solvent based on the treatment fluid and described a variety of molten
The solubility parameter of the various solvents of agent carries out the mixing of each solvent in the mixing unit.
11. flow path cleaning device according to claim 10, which is characterized in that
The solvent supply unit is configured to independently supply m kind solvent respectively to the mixing unit, the integer that m is 3 or more,
Control unit output control signal, with the solubility parameter of the solvent based on the treatment fluid and described a variety of molten
The solubility parameter of the various solvents of agent, to select the supply of solvent described in the n kind fewer than m kind from the solvent supply unit
To the mixing unit, the integer that n is 2 or more.
12. flow path cleaning device described in 0 or 11 according to claim 1, which is characterized in that
The control unit output controls signal to control supply of the multi-solvents to the mixing unit, to be based on the processing
The mixing ratio of the solubility parameter of the various solvents of the solubility parameter and multi-solvents of the solvent of liquid by
The multi-solvents mixing.
13. flow path cleaning device according to claim 11 or 12, which is characterized in that
X-axis is set as based on the polarization item size that will include in the solubility parameter and will include in the solubility parameter
The coordinate of the solvent of the coordinate and treatment fluid of each solvent when hydrogen bond item size is set as Y-axis carries out solvent to described
The supply of mixing unit.
14. flow path cleaning device according to claim 9 characterized by comprising
Information acquiring section is used to obtain information related with the treatment fluid；
Storage unit, is stored with the first data, and first data are in order to based on the information related with treatment fluid got
To go out the n kind below solvent fewer than m kind and preset, the integer that m is 3 or more from solvent selection described in m kind, n
For 2 or more integer；And
Control unit, output control signal, to supply the n kind solvent below selected to the mixing unit.
15. the flow path cleaning device according to claim 9 or 14, which is characterized in that have:
Information acquiring section is used to obtain information related with the treatment fluid；
Storage unit, is stored with the second data, and second data are in order to based on the information related with treatment fluid got
To determine the mixing ratio of the multi-solvents and preset；And
Control unit, output control signal, is come with supplying the multi-solvents to the mixing unit according to the mixing ratio determined
It is mixed.
16. the flow path cleaning device according to any one of claim 9 to 15, which is characterized in that
The solubility parameter is Hansen Solubility Parameter.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018007573A JP6984431B2 (en) | 2018-01-19 | 2018-01-19 | Channel cleaning method and channel cleaning device |
| JP2018-007573 | 2018-04-06 |
Publications (2)
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| JP2019129157A (en) | 2019-08-01 |
| CN110060922B (en) | 2024-05-17 |
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