CN110048476A - A kind of battery protection driving circuit and battery protection drive system - Google Patents
A kind of battery protection driving circuit and battery protection drive system Download PDFInfo
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- CN110048476A CN110048476A CN201910263397.6A CN201910263397A CN110048476A CN 110048476 A CN110048476 A CN 110048476A CN 201910263397 A CN201910263397 A CN 201910263397A CN 110048476 A CN110048476 A CN 110048476A
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- oxide
- semiconductor
- metal
- driving unit
- battery protection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/00302—Overcharge protection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/00306—Overdischarge protection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Protection Of Static Devices (AREA)
Abstract
The invention discloses a kind of battery protection driving circuit and battery protection drive systems, the battery Drive Protecting Circuit is integrated in battery protection chip, it is connect with the protective switch pipe in battery protection chip, including detection module, level switch module, substrate selecting module and drive module, by the detection module output protection signal to level switch module, when battery protection chip is discharge prevention state, by substrate selecting module by the ground terminal voltage output of battery protection chip to level switch module, so that level switch module control drive module exports the first low level signal, control the shutdown of protective switch pipe；When the battery protection chip is charge protection state; by substrate selecting module by the current detecting end voltage output of battery protection chip to level switch module; so that level switch module control drive module exports the second low level signal; the shutdown of protective switch pipe is controlled, the safety of battery charging and discharging and the reliability of battery protection chip are improved.
Description
Technical field
The present invention relates to battery protection technical field, in particular to a kind of battery protection driving circuit and battery protection driving
System.
Background technique
As the portable equipments such as smart phone and intelligent toy lamp are constantly popularized, having in this kind of product most of is all
It is powered using lithium ion battery, but there are many safety issues for lithium battery, therefore lithium battery needs a li-ion cell protection
System increases security reliability.
A kind of existing single lithium battery protects system schematic to Fig. 1 currently on the market.The system comprises lithium battery 10,
Charger or load 20 integrate the battery protection chip 30 that charge and discharge is electrically isolated NMOS tube；The anode of lithium battery 10 meets battery guarantor
Protect the power input VDD of chip 30；The cathode of lithium battery 10 and the ground terminal VSS of battery protection chip 30.Charger is negative
The anode of load 20 is connected with the power input VDD of the anode of lithium battery 10 and battery protection chip 30, charger or negative
The negative terminal of load 20 is connected with the current detecting end VM of battery protection chip 30.Wherein battery protection chip 30 is examined including battery protection
Control module 31 is surveyed, charge and discharge is electrically isolated NMOS tube 32, substrate selecting module 33.Battery protection detection control module 31 passes through monitoring
The electric current that the voltage of lithium battery 10 and isolation NMOS tube stream pass through controls the on and off of isolation NMOS tube 32.
Fig. 2 is the driving circuit of built-in isolation 32 pipe of NMOS tube of existing control, and the driving circuit includes cell voltage electricity
Stream protection detection module 201, low transition module 202, substrate selecting module 203, logic pull up p-type metal-oxide-semiconductor PM21 and post
Raw body diode PD21, logic pull down the body diode ND21 of N-type isolation metal-oxide-semiconductor NM21 and parasitism, and logic pulls up p-type MOS
The body diode PD22 of pipe PM22 and parasitism, logic pull down the body diode ND22 of N-type isolation metal-oxide-semiconductor NM22 and parasitism.
In order to keep built-in isolation power NMOS conduction impedance sufficiently small in existing scheme, while considering cost problem, at present
This battery protecting circuit is all using low pressure 5V process devices.In battery discharge whole process, on battery protection chip most
Big voltage is exactly single-lithium-battery cell voltage, and single-lithium-battery cell voltage maximum is no more than 4.5V, so battery protection chip controls
The maximum voltage of circuit is no more than 4.5V.It charges the battery when with charger, when battery is full of or charging current is abnormal, charging
Cut-off, battery protection chip power input vdd terminal to the voltage value between charger negative terminal VM are exactly charger zero load output
Voltage.The N-type isolation metal-oxide-semiconductor NM21 and p-type metal-oxide-semiconductor PM22 in Fig. 2 is off at this time because N-type isolation metal-oxide-semiconductor NM22 and
P-type metal-oxide-semiconductor PM22 is low pressure 5V device, and the breakdown voltage of device is no more than 10V.
Specifically, also referring to Fig. 3, when p-type metal-oxide-semiconductor PM22 shutdown in Fig. 2, the grid 1 of PM22, source electrode 2 and
Substrate 3 is connected with battery protection chip power input VDD, and the maximum pressure resistance of source electrode 2 to drain electrode 4 is substrate after PM22 is turned off
The breakdown reverse voltage for the parasitic diode that N-type trap 8 constitutes the region P+ 6 of source electrode 2, i.e., the region P+ 6 of source electrode 2 is to N-type trap
8 breakdown voltage, the not super 10V of this breakdown voltage, wherein the p-type metal-oxide-semiconductor further includes the region N+ 6 of substrate 3, drain 4 P+
Region 7.Furthermore referring to Figure 4 together, after the shutdown of single N-type isolation metal-oxide-semiconductor, the grid 11 of metal-oxide-semiconductor, source electrode is isolated in N-type
12 and substrate 13 be connected together, then drain 14 to source electrode 12 breakdown voltage be drain 14 the region N+ 141 to substrate p-type
The breakdown reverse voltage for the parasitic diode that trap 142 is constituted, this region N+ 141 puncture the reverse-biased P-N junction that p-type trap 142 is formed
The not super 10V of voltage, wherein the N-type isolation metal-oxide-semiconductor further includes isolation end 15, the region N+ 121 of source electrode 12, the P+ of substrate 13
Region 131, the region N+ 151 of isolation end 15, the N-type trap 152 of isolation end 15, p-type trap 16, DN type trap 17, the region P-sub 18.
Therefore this scheme application at present may be only available for the idle voltage output not more than charger of 10V, and then limit handle
The application range for the single battery protection chip that charge and discharge switch pipe and battery protection control integrate, reduces chip certainly
The reliability of body.
Thus the prior art could be improved and improve.
Summary of the invention
Place in view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide battery protection driving circuit and batteries
Drive system is protected, protective switch pipe can be timely turned off when battery charging and discharging is abnormal, cuts off the charge and discharge of battery
Electricity improves the safety of battery protection chip.Meanwhile the battery protection driving circuit can effectively solve existing use low pressure 5V
The single battery that technique integrates charge and discharge switch pipe and battery protection controller protects chip source input terminal VDD to electricity
Pressure resistance between stream detection input VM not enough causes using limited problem, promoted into battery protection chip reliability and
Application range.
In order to achieve the above object, this invention takes following technical schemes:
A kind of battery protection driving circuit, is integrated in battery protection chip, opens with the protection in the battery protection chip
Close pipe connection, including detection module, level switch module, substrate selecting module and drive module；The detection module and level
Conversion module connection, the level switch module are connect with the drive module and substrate selecting module, and the substrate selects mould
Block is also connect with drive module；The detection module turns according to guard mode output protection signal to the level of battery protection chip
Block is changed the mold, when the battery protection chip is discharge prevention state, substrate selecting module the connecing battery protection chip
Ground terminal voltage output to level switch module, the level switch module controls institute according to the protection signal and ground terminal voltage
The output end for stating drive module exports the first low level signal, controls the protective switch pipe shutdown；When the battery protection core
When piece is charge protection state, the substrate selecting module turns the current detecting end voltage output of battery protection chip to level
Block is changed the mold, so that the level switch module controls the drive module according to the protection signal and current detecting end voltage
Output end exports the second low level signal, controls the protective switch pipe shutdown.
In the battery protection driving circuit, the level switch module is specifically used for defeated according to the ground terminal voltage
After protecting signal to drive module out, then a high level signal is exported to drive module, control the output end of the drive module
Export the first low level signal；Or the protection signal is converted by the second low level signal according to current detecting end voltage
Output is to after drive module, then exports a high level signal to drive module, controls the output end output the of the drive module
Two low level signals.
In the battery protection driving circuit, the drive module includes the first driving unit, the second driving unit, the
Three driving units and the 4th driving unit, first driving unit connect level switch module, third driving unit and second
Driving unit, second driving unit connects the third driving unit, the 4th driving unit and substrate selecting module, described
Third driving unit connects the 4th driving unit and protective switch pipe, and the 4th driving unit connects protective switch pipe；Work as institute
When stating battery protection chip discharge condition, first driving unit and second driving unit are led according to protection signal respectively
After logical and shutdown, the third driving unit and the 4th driving unit are respectively according to high level signal turn-on and turn-off, so that institute
It states output end and exports the first low level signal；When the battery protection chip is charge protection state, driven by described first
Unit and the second driving unit respectively according to the second low level signal turn-on and turn-off after, by the third driving unit and
4th driving unit is respectively according to high level signal turn-on and turn-off, so that the output end exports the second low level signal.
In the battery protection driving circuit, first driving unit includes the first metal-oxide-semiconductor and the first parasitic two poles
Pipe, the grid of first metal-oxide-semiconductor connect the level switch module, described in the source electrode of first metal-oxide-semiconductor is connected with substrate
The drain electrode at VDD signal end, first metal-oxide-semiconductor connects second driving unit, third driving unit and the 4th driving unit,
The first parasitic diode anode connects the drain electrode of first metal-oxide-semiconductor, and the cathode of first parasitic diode connects institute
State the source electrode and substrate of the first metal-oxide-semiconductor.
In the battery protection driving circuit, second driving unit includes the second metal-oxide-semiconductor, third metal-oxide-semiconductor, second
Parasitic diode and third parasitic diode, the grid of second metal-oxide-semiconductor and the grid of third metal-oxide-semiconductor are all connected with the level
Conversion module, it is single that the drain electrode of second metal-oxide-semiconductor connects the drain electrode of first metal-oxide-semiconductor, third driving unit and the 4th driving
Member, the source electrode of second metal-oxide-semiconductor connect the drain electrode of the third metal-oxide-semiconductor with substrate；The source electrode and substrate of the third metal-oxide-semiconductor
Connect the substrate selecting module, level switch module and the 4th driving unit；The anode connection of second parasitic diode
The source electrode and substrate of two metal-oxide-semiconductor, the cathode of second parasitic diode connect the drain electrode of second metal-oxide-semiconductor；It is described
The anode of third parasitic diode connects the source electrode and substrate of the third metal-oxide-semiconductor, and the cathode of the third parasitic diode connects
Connect the drain electrode of the third metal-oxide-semiconductor.
In the battery protection driving circuit, the third driving unit includes the 4th metal-oxide-semiconductor and the 4th parasitic two poles
Pipe, the grid of the 4th metal-oxide-semiconductor connect the 4th driving unit, the drain electrode of the first metal-oxide-semiconductor and the drain electrode of the second metal-oxide-semiconductor, institute
The source electrode for stating the 4th metal-oxide-semiconductor connects the VDD signal end with substrate, and the drain electrode of the 4th metal-oxide-semiconductor connects output end and the 4th
Driving unit, the anode of the 4th parasitic diode connect the drain electrode of the 4th metal-oxide-semiconductor, the 4th parasitic diode
Cathode connects the source electrode and substrate of the 4th metal-oxide-semiconductor.
In the battery protection driving circuit, the 4th driving unit includes the 5th metal-oxide-semiconductor and the 5th parasitic two poles
Pipe, the grid of the 5th metal-oxide-semiconductor connect the drain electrode of the grid, the first metal-oxide-semiconductor of the 4th metal-oxide-semiconductor and the leakage of the second metal-oxide-semiconductor
Pole；The drain electrode of drain electrode the connection output end and the 4th metal-oxide-semiconductor of 5th metal-oxide-semiconductor；The source electrode and lining of 5th metal-oxide-semiconductor
Bottom connects source electrode and substrate, the level switch module and substrate selecting module of the third metal-oxide-semiconductor；5th parasitic diode
Anode connect the source electrode and substrate of the 5th metal-oxide-semiconductor, the cathode of the 5th metal-oxide-semiconductor connects the leakage of the 5th metal-oxide-semiconductor
Pole.
In the battery protection driving circuit, the 4th metal-oxide-semiconductor is high voltage p-type metal-oxide-semiconductor.
In the battery protection driving circuit, first metal-oxide-semiconductor is p-type metal-oxide-semiconductor, second metal-oxide-semiconductor, third
Metal-oxide-semiconductor and the 5th metal-oxide-semiconductor are N-type isolation metal-oxide-semiconductor.
A kind of battery protection drive system, including charging unit or electric discharge device and lithium battery further include as described above
Battery protection driving circuit.
Compared to the prior art, battery protection driving circuit provided by the invention and battery protection drive system, the electricity
Pond Drive Protecting Circuit is integrated in battery protection chip, is connect with the protective switch pipe in the battery protection chip, including
Detection module, level switch module, substrate selecting module and drive module, by the detection module output protection signal to level
Conversion module, when the battery protection chip is discharge prevention state, the substrate selecting module is by battery protection chip
Ground terminal voltage output is to level switch module, so that level switch module control drive module exports the first low level signal,
Control the shutdown of protective switch pipe；When the battery protection chip is charge protection state, the substrate selecting module is by battery
Protect the current detecting end voltage output of chip to level switch module, so that level switch module control drive module output the
Two low level signals, control protective switch pipe shutdown, the battery protection driving circuit will using high voltage p-type metal-oxide-semiconductor and
The N-type isolation concatenated method of metal-oxide-semiconductor can further improve to the pressure voltage of battery protection driving circuit, and then improving lithium electricity
Also the pressure voltage of battery protection chip while the safety of pond charge and discharge, has expanded the application range of battery protection chip.
Detailed description of the invention
Fig. 1 is prior art battery protection chip and battery and charger or the connection schematic diagram of load.
Fig. 2 is the circuit diagram of battery protection driving circuit in the prior art.
Fig. 3 is the structural schematic diagram of the low pressure 5V technique p-type metal-oxide-semiconductor of existing standard.
Fig. 4 is that the structural schematic diagram of metal-oxide-semiconductor is isolated in the low pressure 5V technique N-type of existing standard.
Fig. 5 is the structural schematic diagram of battery protection drive system provided by the invention.
Fig. 6 is the structural block diagram of battery protection driving circuit provided by the invention.
Fig. 7 is the circuit diagram of battery protection driving circuit provided by the invention.
Fig. 8 is the structural schematic diagram of high voltage p-type metal-oxide-semiconductor in battery protection driving circuit provided by the invention.
Specific embodiment
Place in view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of battery protection driving circuit and
Battery protection drive system can timely turn off protective switch pipe when battery charging and discharging is abnormal, cut off battery
Charge and discharge improve the safety of battery protection chip.Meanwhile the battery protection driving circuit can effectively solve existing use and mark
The single battery protection chip source that quasi- low pressure 5V technique integrates charge and discharge switch pipe and battery protection controller is defeated
Enter to hold the pressure resistance between VDD to current sense input VM not enough to cause to be promoted using limited problem into battery protection
Chip reliability and application range.
To make the purpose of the present invention, technical solution and effect clearer, clear and definite, right as follows in conjunction with drawings and embodiments
The present invention is further described.It should be appreciated that described herein, specific examples are only used to explain the present invention, is not used to
Limit the present invention.
Referring to Fig. 5, battery protection system provided by the invention, including charging unit or electric discharge device 100, battery protection
Chip 200 and lithium battery 300, the power input of the battery protection chip 200 connect the anode of the lithium battery 300, institute
The ground terminal for stating battery protection chip 200 connects the cathode of the lithium battery 300, the electric current inspection of the battery protection chip 200
The cathode that end connects the charging unit or electric discharge device 100 is surveyed, battery protection drive is integrated in the battery protection chip 200
Dynamic circuit 210 and protective switch pipe Q6, the battery protection driving circuit 210 are connect with the protective switch pipe Q6, pass through institute
Stating battery protection chip 200 can detect 300 charging and discharging currents situation of lithium battery, when 300 overcharging or overdischarging of lithium battery
When, the power switch tube is controlled by the battery protection driving circuit 210 in the battery protection chip 200 and is turned off
The charge and discharge of lithium battery 300 are cut off, and then the security reliability of battery protection chip 200 can be effectively improved.
Specifically, referring to Figure 6 together, the battery protection driving circuit 210 includes detection module 211, level conversion
Module 212, substrate selecting module 213 and drive module 214；The detection module 211 connects the level switch module 212,
The level switch module 212 connects the drive module 214 and substrate selecting module 213, and the substrate selecting module 213 connects
Connect ground terminal and the current detecting end of the battery protection chip 200.The detection module 211 is according to battery protection chip 200
Guard mode output protection signal to level switch module 212, when the battery protection chip 200 is discharge prevention state
When, the substrate selecting module 213 by the ground terminal voltage output of battery protection chip 200 to level switch module 212, it is described
Level switch module 212 is exported according to the output end CDO that the protection signal and ground terminal voltage control the drive module 214
First low level signal controls the protective switch pipe Q6 shutdown.
That is, then the detection module 211 can output protection when the battery protection chip 200 enters guard mode
Signal is to level switch module 212, it is preferable that the protection signal is low level voltage VSS.And lithium battery 300 was discharging
Electric current passes through electric discharge device to the current detecting end of battery protection chip 200, later via guarantor from the anode of lithium battery 300 in journey
Shield switching tube Q6 flow back into the ground terminal i.e. VSS signal end of battery protection chip 200, at this time 200 ground terminal of battery protection chip
Voltage lower than electric discharge device 200 ground terminal of cathode voltage namely the battery protection chip voltage be less than battery protection
The voltage at 200 current detecting end of chip, substrate selecting module 213 is by the ground terminal voltage of the battery protection chip 200 at this time
Output to level switch module 212, the specially described ground terminal voltage output to the bottom end of level switch module 212 namely this
When using the ground terminal voltage of the battery protection chip 200 as 212 ground terminal voltage of level switch module.Later, the level
Conversion module 212 exports the low level voltage VSS to drive module 214 according to the ground terminal voltage, and then promotes institute
The output end CDO for stating drive module 214 exports the first low level signal, and the first low level signal at this time is low level voltage
VSS, the protective switch pipe Q6 cut-off, discharge path cutting stop electric discharge, lithium battery 300 are avoided to damage because of overdischarge.
When the battery protection chip 200 is charge protection state, the substrate selecting module 213 is by battery protection core
The current detecting end voltage output of piece 200 is to level switch module 212, so that the level switch module 212 is according to the guarantor
The output end CDO that shield signal detection end voltage controls the drive module 214 exports the second low level signal, controls the protection
Switching tube Q6 shutdown.Electric current passes through guarantor from the cathode that charging unit flows to lithium battery 300 anode to lithium battery 300 in charging process
Shield chip interior protective switch pipe Q6 flow back into the cathode of charging unit, at this time the cathode of charger apparatus namely current detecting end
Voltage be lower than 200 ground terminal voltage of battery protection chip.When 300 voltage of lithium battery rises in 300 charging process of lithium battery
The protection of lithium battery 300 is full of test point or overcurrent charge protection, same 211 output protection signal i.e. one of detection module occurs
Low level voltage VSS is to level switch module 212, then substrate selecting module 213, by cathode voltage, that is, battery of charging unit
Protect ground terminal voltage of the current detecting end voltage of chip 200 as level switch module 212, and then the level switch module
The low level voltage of input is converted into the second low level signal by 212 to be exported to drive module 214, and the driving mould is thus promoted
The output end CDO of block 214 exports the second low level signal, that is, low level voltage VM, the protective switch pipe Q6 cut-off, and charging is led to
Road cutting, stops charging, and then effectively lithium battery 300 is avoided to damage because of overcharge.
Further, the level switch module 212 is specifically used for protecting signal extremely according to the ground terminal voltage output
After drive module 214, then a high level signal is exported to drive module 214, control the output end CDO of the drive module 214
Export the first low level signal；Or the protection signal is converted by the second low level signal according to current detecting end voltage
After output to drive module 214, then a high level signal is exported to drive module 214, control the output of the drive module 214
CDO is held to export the second low level signal.
When the battery protection chip 200 is in discharge condition, the substrate selecting module 213 is by the battery protection
Ground terminal voltage of the ground terminal voltage of chip 200 as level switch module 212, and then the level switch module 212 is direct
The received protection signal is exported to drive module 214, a high level signal is exported again later to drive module 214, makes
214 first low level signal of final output of drive module is obtained to protective switch pipe Q6, the protective switch pipe Q6 is controlled and cuts
Only.When the battery protection chip 200 is in charged state, the substrate selecting module 213 is by the battery protection chip
Ground terminal voltage of the 200 current detecting end voltage as level switch module 212, and then the level switch module 212 is by institute
It states received protection signal and converts the second low level signal to drive module 214, export a high level signal again later to driving
Module 214, so that 214 the second low level signal of final output of the drive module controls protective switch to protective switch pipe Q6
Pipe Q6 cut-off switches the low of drive module 214 according to the guard mode of protection chip by 212 switching module of level switch module
Current potential, and then realize the frequency converter to 300 charge/discharge of lithium battery.
Further, please continue to refer to Fig. 6, the drive module 214 drives including the first driving unit 2141, second
Unit 2142, third driving unit 2143 and the 4th driving unit 2144, first driving unit 2141 connect the VDD letter
Number end, third driving unit 2143, the second driving unit 2142 and level switch module 212；Second driving unit 2142
It is also connected with the third driving unit 2143, the 4th driving unit 2144, level switch module 212 and substrate selecting module 213,
The third driving unit 2143 is also connect with the 4th driving unit 2144 and protective switch pipe Q6, the 4th driving unit
2144 also connect with protective switch.When 200 discharge condition of battery protection chip, first driving unit 2141 and institute
The second driving unit 2142 is stated respectively according to protection signal conduction and after turning off, the third driving unit 2143 and the 4th drives
Unit 2144 is respectively according to high level signal turn-on and turn-off, so that the output end CDO exports the first low level signal.Work as institute
State battery protection chip 200 be charge protection state when, divided by first driving unit 2141 and the second driving unit 2142
Not according to the second low level signal turn-on and turn-off after, by the third driving unit 2143 and the 4th driving unit 2144
Respectively according to high level signal turn-on and turn-off, so that the output end CDO exports the second low level signal.
Specifically, when the battery protection chip 200 is in discharge condition, the output of level switch module 212 is protected
Signal, that is, low level voltage is protected to the first driving unit 2141 and the second driving unit 2142, so that first driving unit
2141 conductings and second driving unit 2142 turn off and then export a high level signal to 2143 He of third driving unit
4th driving unit 2144, so that the third driving unit 2143 conducting and the 4th driving unit 2144 shutdown, in turn
The output end CDO exports low level voltage to protective switch pipe Q6.When the battery protection chip 200 is charged state,
The protection signal is converted into the second low level signal and exports the first driving unit 2141 and the by the level switch module 212
Two driving units 2142, so that first driving unit 2141 conducting and second driving unit 2142 shutdown；And then
It exports a high level signal to third driving unit 2143 and the 4th driving unit 2144 and controls the third driving unit 2143
Conducting, and the 4th driving unit 2144 turns off, the final output end CDO exports the second low level signal to protective switch
Pipe Q6 is connected control of the closed state realization to output end CDO level signal by controlling each driving unit, and then completes
Control with cut-off is connected to protective switch pipe Q6.
Further, referring to Figure 7 together, first driving unit 2141 includes the first metal-oxide-semiconductor Q1 and first parasitic
The grid of diode D1, the first metal-oxide-semiconductor Q1 connects the level switch module 212, the source electrode of the first metal-oxide-semiconductor Q1 and
Substrate connects the VDD signal end, and the drain electrode of the first metal-oxide-semiconductor Q1 connects second driving unit 2142, third driving
Unit 2143 and the 4th driving unit 2144, the first parasitic diode D1 anode connect the drain electrode of the first metal-oxide-semiconductor Q1,
The cathode of the first parasitic diode D1 connects the source electrode and substrate of the first metal-oxide-semiconductor Q1, it is preferable that the first MOS
Pipe Q1 is that logic pulls up p-type metal-oxide-semiconductor, and the level switch module 212 passes through output protection signal or the second low level signal the
The grid of one metal-oxide-semiconductor Q1, and then effectively control the conducting of the first metal-oxide-semiconductor Q1.
Further, second driving unit 2142 includes the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3, the second parasitic two poles
Pipe D2 and third parasitic diode D3, the grid of the second metal-oxide-semiconductor Q2 and the grid of third metal-oxide-semiconductor Q3 are all connected with the level
The drain electrode of conversion module 212, the second metal-oxide-semiconductor Q2 connects the drain electrode of the first metal-oxide-semiconductor Q1,2143 and of third driving unit
4th driving unit 2144, the source electrode of the second metal-oxide-semiconductor Q2 connect the drain electrode of the third metal-oxide-semiconductor Q3 with substrate；Described
The source electrode of three metal-oxide-semiconductor Q3 connects the substrate selecting module 213, level switch module 212 and the 4th driving unit with substrate
2144；The anode of the second parasitic diode D2 connects the source electrode and substrate of two metal-oxide-semiconductor, second parasitic diode
The cathode of D2 connects the drain electrode of the second metal-oxide-semiconductor Q2；The anode of the third parasitic diode D3 connects the third metal-oxide-semiconductor
The source electrode and substrate of Q3, the cathode of the third parasitic diode D3 connect the drain electrode of the third metal-oxide-semiconductor Q3.
Preferably, the second metal-oxide-semiconductor Q2 and third metal-oxide-semiconductor Q3 is N-type isolation metal-oxide-semiconductor, by by the second metal-oxide-semiconductor Q2
It connects with third metal-oxide-semiconductor Q3, so that N-type isolation metal-oxide-semiconductor, that is, the second metal-oxide-semiconductor Q2 and third that described two series connection are later
After metal-oxide-semiconductor Q3 shutdown, the source electrode of the second metal-oxide-semiconductor Q2 connects the drain electrode end of the second metal-oxide-semiconductor Q2 with substrate, the second metal-oxide-semiconductor Q2's
The grid of grid and third metal-oxide-semiconductor Q3 and the source electrode and substrate of the second metal-oxide-semiconductor Q2 are connected together, corresponding two N being together in series
Type be isolated metal-oxide-semiconductor the shutdown breakdown voltage i.e. region N+ of the drain electrode of the second metal-oxide-semiconductor Q2 to third metal-oxide-semiconductor Q3 substrate p-type
The breakdown reverse voltage for two series parasitic diodes that trap is constituted, the single region N+ puncture the reverse-biased P-N junction that p-type trap is formed
The not super 10V of voltage, two reverse-biased P-N junctions being together in series, which increase breakdown voltage, to be made to 20V by increasing the breakdown value of metal-oxide-semiconductor
The pressure voltage for obtaining the battery protection driving circuit 210 is improved, and then improves 200 power input of battery protection chip
The pressure voltage at end and current detecting end, so as to improve the application range of the battery protection chip 200.
Further, the third driving unit 2143 includes the 4th metal-oxide-semiconductor Q4 and the 4th parasitic diode D4, and described the
The grid of four metal-oxide-semiconductor Q4 connects the 4th driving unit 2144, the drain electrode of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 drain electrode, institute
The source electrode for stating the 4th metal-oxide-semiconductor Q4 connects the VDD signal end with substrate, and the drain electrode of the 4th metal-oxide-semiconductor Q4 connects output end CDO
With the 4th driving unit 2144, the anode of the 4th parasitic diode D4 connects the drain electrode of the 4th metal-oxide-semiconductor Q4, and described
The cathode of four parasitic diode D4 connects the source electrode and substrate of the 4th metal-oxide-semiconductor Q4.Preferably, the 4th metal-oxide-semiconductor Q4 is
High voltage p-type metal-oxide-semiconductor.
It is specific to improve by obtaining high voltage p-type metal-oxide-semiconductor after improving existing p-type metal-oxide-semiconductor also referring to Fig. 8
Process is as follows, and the injection type to drain in the p-type MOS device of normal voltage 5V is changed to p-type trap from the original region P+
1022, generating one can be with high voltage bearing p-type metal-oxide-semiconductor, while below N-type trap 1032 inside Pmos device and p-type trap 1042
It needs to do by the relatively low n type buried layer DNwell106 injection of concentration and be isolated, the drain electrode 104 of high voltage p-type metal-oxide-semiconductor
P-type trap 1042 and the region P-sub 105 keep apart, improve high voltage by reducing the concentration of drain electrode 104 of p-type metal-oxide-semiconductor
The breakdown voltage of p-type metal-oxide-semiconductor.After the shutdown of high voltage p-type metal-oxide-semiconductor, the source electrode 102 of the high voltage p-type metal-oxide-semiconductor arrives drain electrode
104 maximum pressure resistance is that the p-type trap of 1032 pairs of N-type trap drain electrodes 103 of substrate 103 forms the reverse breakdown electricity of parasitic diode
The breakdown voltage of pressure, this reverse-biased P-N junction is not less than 15V, and the high voltage p-type MOS transistor device structure does not need additionally to increase again
Add the number of plies of exposure mask, neither increase cost, at the same time it can also improve the maximum breakdown voltage value of metal-oxide-semiconductor, and then improves the electricity
The pressure voltage of driving circuit 210 is protected in pond, expands the application range of the battery protection chip 200.The high voltage p-type MOS
Pipe further includes the region N+ 1031 in the region P+ 1041 of drain electrode 104, substrate 103, the region P+ 1021, P of source electrode 102, source electrode 102
The region type substrate P-sub 105；Wherein, the doping concentration in the region P+ is higher than the doping concentration of p-type trap, the doping concentration in the region N+
Higher than the doping concentration of N-type trap, the doping concentration of N-type trap is higher than the doping concentration of n type buried layer DNwell106, the doping of p-type trap
Concentration is higher than the doping concentration in the region P type substrate P-sub 105.
Further, please continue to refer to Fig. 7, the 4th driving unit 2144 includes the 5th metal-oxide-semiconductor Q5 and the 5th parasitic
Diode D5, the grid of the 5th metal-oxide-semiconductor Q5 connect the grid of the 4th metal-oxide-semiconductor Q4, the drain electrode of the first metal-oxide-semiconductor Q1 and
The drain electrode of two metal-oxide-semiconductor Q2；The drain electrode of drain electrode connection the output end CDO and the 4th metal-oxide-semiconductor Q4 of the 5th metal-oxide-semiconductor Q5；Institute
The source electrode for stating the 5th metal-oxide-semiconductor Q5 connects source electrode and substrate, the level switch module 212 and lining of the third metal-oxide-semiconductor Q3 with substrate
Bottom selecting module 213；The anode of the 5th parasitic diode D5 connects the source electrode and substrate of the 5th metal-oxide-semiconductor Q5, described
The cathode of 5th metal-oxide-semiconductor Q5 connects the drain electrode of the 5th metal-oxide-semiconductor Q5, by the level switch module 220 output high level letter
Number it can control the conducting of the 5th metal-oxide-semiconductor to the grid of the 5th metal-oxide-semiconductor, and then needed for may make the output end CDO to export
Level signal, realize effective control to protective switch pipe Q6.
The course of work of the battery protection driving circuit 210 provided for a better understanding of the invention, below in conjunction with Fig. 5, figure
6, the driving process of the battery protection driving circuit 210 is described in detail in Fig. 7 and Fig. 8:
Overvoltage protection either overcurrent protection occurs in battery charge and discharge process when battery protection chip 200 detects, by
Then 211 output protection signal of detection module, that is, low level voltage VSS to level switch module 212 selects mould by the substrate
The voltage swing of the ground terminal voltage and current test side of the battery protection chip 200 of block 213, when the battery protection
When the ground terminal voltage of chip 200 is less than the current detecting end voltage, the substrate selecting module 213 can be by the ground terminal
Ground terminal voltage of the voltage as the level switch module 212, and using the ground terminal voltage as the second metal-oxide-semiconductor Q2, third
The substrate electric potential of metal-oxide-semiconductor Q3 and the 5th metal-oxide-semiconductor Q5；When the ground terminal voltage of the battery protection chip 200 is greater than the electric current
When the voltage of test side, the substrate selecting module 213 can be using current detecting end voltage as the level switch module
212 ground terminal voltage, and using current detecting end voltage as the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3 and the 5th metal-oxide-semiconductor Q5
Substrate electric potential.
In 300 normal charge and discharge of lithium battery, detection module 211 then exports a high level voltage VDD to level conversion
Module 212, substrate selecting module 213 normally export the ground terminal voltage VSS to the ground terminal of level switch module 212, together
The substrate electric potential of the second metal-oxide-semiconductor of Shi Zuowei Q2, third metal-oxide-semiconductor Q3 and the 5th metal-oxide-semiconductor Q5.Then level switch module 212 is defeated
The high level signal VDD entered is exported again to the grid of the grid of the first metal-oxide-semiconductor Q1, the grid of the second metal-oxide-semiconductor Q2 and third metal-oxide-semiconductor Q3
Pole, so that the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3 are opened, the first metal-oxide-semiconductor Q1 shutdown exports a low level electricity again later
Press VSS to the grid of the 4th metal-oxide-semiconductor Q4 and the grid of the 5th metal-oxide-semiconductor Q5, then the 5th metal-oxide-semiconductor Q5 is turned off, the 4th metal-oxide-semiconductor Q4
It opens, the output end CDO output is high level voltage VDD, so that the protective switch pipe Q6 is connected, lithium battery 300 is normal
Charge and discharge.
Lithium battery 300 during discharge, is abnormal, detection module 211301 is defeated in 300 discharge process of lithium battery
A low level voltage VSS can export the ground terminal voltage VSS to level switch module 212, substrate selecting module 213 out
To the ground terminal of level switch module 212, and the substrate electric potential as the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3 and the 5th metal-oxide-semiconductor Q5,
By the cathode VSS of the source electrode and substrate terminal of the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3 and the 5th metal-oxide-semiconductor Q5 and lithium battery 300
It links together, level switch module 212 is directly output to the low level signal VSS of input the grid of the first metal-oxide-semiconductor Q1,
The grid of two metal-oxide-semiconductor Q2 and the grid of third metal-oxide-semiconductor Q3, so that the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3 are turned off, first
Metal-oxide-semiconductor Q1 is opened, then exports a high level signal VDD to the grid of the 4th metal-oxide-semiconductor Q4 and the grid of the 5th metal-oxide-semiconductor Q5, is made
It obtains the 5th metal-oxide-semiconductor Q5 to open, the 4th metal-oxide-semiconductor Q4 shutdown, and then the output end CDO is low level voltage VSS, so that institute
Protective switch pipe Q6 conducting is stated, the discharge path of lithium battery 300 is cut off, and stops electric discharge.
When 300 voltage of lithium battery rises to the protection of lithium battery 300 full of test point or hair in 300 charging process of lithium battery
Raw overcurrent charge protection, detection module 211 export a low level voltage VSS to level switch module 212, and then substrate selects
Module 213 is selected using current detecting end voltage VM as the end line voltages of level switch module 212, and as the second metal-oxide-semiconductor Q2,
The substrate electric potential of three metal-oxide-semiconductor Q3 and the 5th metal-oxide-semiconductor Q5；Level switch module 212 can the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3 and
The source electrode and substrate terminal of 5th metal-oxide-semiconductor Q5 and the cathode VM of lithium battery 300 link together, and level switch module 212 is input
Low level voltage VSS be converted into the second low level signal i.e. low level voltage VM and export to the grid of the first metal-oxide-semiconductor Q1, second
The grid of metal-oxide-semiconductor Q2 and the grid of third metal-oxide-semiconductor Q3, so that the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3 are turned off, the first MOS
Pipe Q1 is opened, then exports a high level signal VDD to the grid of the 4th metal-oxide-semiconductor Q4 and the grid of the 5th metal-oxide-semiconductor Q5, so that institute
The 5th metal-oxide-semiconductor Q5 unlatching, the 4th metal-oxide-semiconductor Q4 shutdown are stated, and then the output end CDO is low level voltage VSS, so that the guarantor
Switching tube Q6 conducting is protected, the discharge path of lithium battery 300 is cut off, and stops electric discharge.
The present invention correspondingly provides a kind of battery Drive Protecting Circuit, due to above to the battery Drive Protecting Circuit
It is described in detail, and will not be described here in detail.
In conclusion battery protection driving circuit provided by the invention and battery protection drive system, the battery driving
It protects circuit integration in battery protection chip, is connect with the protective switch pipe in the battery protection chip, including detection mould
Block, level switch module, substrate selecting module and drive module, by the detection module output protection signal to level conversion mould
Block, when the battery protection chip is discharge prevention state, the substrate selecting module is by the ground terminal of battery protection chip
Voltage output is to level switch module, so that level switch module control drive module exports the first low level signal, control is protected
Protect switching tube shutdown；When the battery protection chip is charge protection state, the substrate selecting module is by battery protection core
The current detecting end voltage output of piece is to level switch module, so that level switch module control drive module exports the second low electricity
Ordinary mail number, control protective switch pipe shutdown, the battery protection driving circuit will using high voltage p-type metal-oxide-semiconductor and by N-type every
From the pressure voltage that the concatenated method of metal-oxide-semiconductor can further improve battery protection driving circuit, and then improving lithium battery charge and discharge
The pressure voltage of also battery protection chip, has expanded the application range of battery protection chip while the safety of electricity.
It, can according to the technique and scheme of the present invention and its hair it is understood that for those of ordinary skills
Bright design is subject to equivalent substitution or change, and all these changes or replacement all should belong to the guarantor of appended claims of the invention
Protect range.
Claims (10)
1. a kind of battery protection driving circuit, is integrated in battery protection chip, with the protection in the battery protection chip
Switching tube connection, which is characterized in that including detection module, level switch module, substrate selecting module and drive module, the inspection
It surveys module to connect with level switch module, the level switch module is connect with the drive module and substrate selecting module, institute
Substrate selecting module is stated also to connect with drive module；
The detection module according to the guard mode output protection signal of battery protection chip to level switch module, when the electricity
Chip is protected in pond when being discharge prevention state, and the substrate selecting module is by the ground terminal voltage output of battery protection chip to electricity
Flat conversion module, the level switch module control the output of the drive module according to the protection signal and ground terminal voltage
Output the first low level signal in end controls the protective switch pipe shutdown；
When the battery protection chip is charge protection state, the substrate selecting module examines the electric current of battery protection chip
End voltage output is surveyed to level switch module, so that the level switch module is according to the protection signal and current detecting end electricity
The output end of the voltage-controlled system drive module exports the second low level signal, controls the protective switch pipe shutdown.
2. battery protection driving circuit according to claim 1, which is characterized in that the level switch module is specifically used for
After protecting signal to drive module according to the ground terminal voltage output, then a high level signal is exported to drive module, control
The output end of the drive module exports the first low level signal；Or according to current detecting end voltage by the protection signal
It is converted into the second low level signal to export to drive module, then exports a high level signal to drive module, control the drive
The output end of dynamic model block exports the second low level signal.
3. battery protection driving circuit according to claim 2, which is characterized in that the drive module includes the first driving
Unit, the second driving unit, third driving unit and the 4th driving unit, first driving unit connect level conversion mould
Block, third driving unit and the second driving unit, second driving unit connect the third driving unit, the 4th driving list
Member and substrate selecting module, the third driving unit connect the 4th driving unit and protective switch pipe, and the 4th driving is single
Member connection protective switch pipe；When the battery protection chip discharge condition, first driving unit and second driving
Unit is respectively according to protection signal conduction and after turning off, and the third driving unit and the 4th driving unit are respectively according to high level
Signal conduction and shutdown, so that the output end exports the first low level signal；When the battery protection chip is charge protection
When state, by first driving unit and the second driving unit respectively according to the second low level signal turn-on and turn-off
Afterwards, by the third driving unit and the 4th driving unit respectively according to high level signal turn-on and turn-off, so that the output
The second low level signal of end output.
4. battery protection driving circuit according to claim 3, which is characterized in that first driving unit includes first
The grid of metal-oxide-semiconductor and the first parasitic diode, first metal-oxide-semiconductor connects the level switch module, first metal-oxide-semiconductor
Source electrode connects the VDD signal end with substrate, and the drain electrode of first metal-oxide-semiconductor connects second driving unit, third driving
Unit and the 4th driving unit, the first parasitic diode anode connect the drain electrode of first metal-oxide-semiconductor, and described first is parasitic
The cathode of diode connects the source electrode and substrate of first metal-oxide-semiconductor.
5. battery protection driving circuit according to claim 4, which is characterized in that second driving unit includes second
Metal-oxide-semiconductor, third metal-oxide-semiconductor, the second parasitic diode and third parasitic diode, the grid and third metal-oxide-semiconductor of second metal-oxide-semiconductor
Grid be all connected with the level switch module, the drain electrode of second metal-oxide-semiconductor connects the drain electrode of first metal-oxide-semiconductor, third
Driving unit and the 4th driving unit, the source electrode of second metal-oxide-semiconductor connect the drain electrode of the third metal-oxide-semiconductor with substrate；It is described
The source electrode of third metal-oxide-semiconductor connects the substrate selecting module, level switch module and the 4th driving unit with substrate；Described second
The anode of parasitic diode connects the source electrode and substrate of two metal-oxide-semiconductor, described in the cathode connection of second parasitic diode
The drain electrode of second metal-oxide-semiconductor；The anode of the third parasitic diode connects the source electrode and substrate of the third metal-oxide-semiconductor, and described
The cathode of trixenie diode connects the drain electrode of the third metal-oxide-semiconductor.
6. battery protection driving circuit according to claim 5, which is characterized in that the third driving unit includes the 4th
The grid of metal-oxide-semiconductor and the 4th parasitic diode, the 4th metal-oxide-semiconductor connects the drain electrode of the 4th driving unit, the first metal-oxide-semiconductor
It drains with the second metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor connects the VDD signal end, the leakage of the 4th metal-oxide-semiconductor with substrate
Pole connection output end and the 4th driving unit, the anode of the 4th parasitic diode connect the drain electrode of the 4th metal-oxide-semiconductor, institute
The cathode for stating the 4th parasitic diode connects the source electrode and substrate of the 4th metal-oxide-semiconductor.
7. battery protection driving circuit according to claim 6, which is characterized in that the 4th driving unit includes the 5th
Metal-oxide-semiconductor and the 5th parasitic diode, the grid of the 5th metal-oxide-semiconductor connect the grid of the 4th metal-oxide-semiconductor, the first metal-oxide-semiconductor
The drain electrode of drain electrode and the second metal-oxide-semiconductor；The drain electrode of drain electrode the connection output end and the 4th metal-oxide-semiconductor of 5th metal-oxide-semiconductor；It is described
The source electrode of 5th metal-oxide-semiconductor connects the source electrode and substrate of the third metal-oxide-semiconductor, level switch module and substrate selection mould with substrate
Block；The anode of 5th parasitic diode connects the source electrode and substrate of the 5th metal-oxide-semiconductor, the cathode of the 5th metal-oxide-semiconductor
Connect the drain electrode of the 5th metal-oxide-semiconductor.
8. battery protection driving circuit according to claim 6, which is characterized in that the 4th metal-oxide-semiconductor is high voltage p-type
Metal-oxide-semiconductor.
9. battery protection driving circuit according to claim 7, which is characterized in that first metal-oxide-semiconductor is p-type metal-oxide-semiconductor,
Second metal-oxide-semiconductor, third metal-oxide-semiconductor and the 5th metal-oxide-semiconductor are N-type isolation metal-oxide-semiconductor.
10. a kind of battery protection drive system, including charging unit or electric discharge device and lithium battery, which is characterized in that further include
Battery protection driving circuit as described in any one of claims 1-9.
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| CN112039172A (en) * | 2020-11-03 | 2020-12-04 | 苏州赛芯电子科技股份有限公司 | Grid substrate control circuit, lithium battery and protection device for protection chip of lithium battery |
| CN112089096A (en) * | 2020-10-09 | 2020-12-18 | 西安稳先半导体科技有限责任公司 | Electronic cigarette, and cigarette cartridge and safety circuit used for electronic cigarette |
| CN112152288A (en) * | 2020-09-21 | 2020-12-29 | 深圳市创芯微微电子有限公司 | Battery protection circuit |
| CN113965195A (en) * | 2021-12-22 | 2022-01-21 | 芯昇科技有限公司 | Universal input/output interface anti-creeping circuit, chip and electronic equipment |
| WO2023006046A1 (en) * | 2021-07-29 | 2023-02-02 | 华为技术有限公司 | Charging protection circuit, driving method, chip, encapsulation structure and electronic device |
| CN116154728A (en) * | 2021-11-22 | 2023-05-23 | 圣邦微电子（北京）股份有限公司 | Battery protection controller and battery protection circuit |
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| CN112039172B (en) * | 2020-11-03 | 2021-01-19 | 苏州赛芯电子科技股份有限公司 | Grid substrate control circuit, lithium battery and protection device for protection chip of lithium battery |
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