CN110048303A - A kind of laser and Optical Maser System - Google Patents
A kind of laser and Optical Maser System Download PDFInfo
- Publication number
- CN110048303A CN110048303A CN201910205706.4A CN201910205706A CN110048303A CN 110048303 A CN110048303 A CN 110048303A CN 201910205706 A CN201910205706 A CN 201910205706A CN 110048303 A CN110048303 A CN 110048303A
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- laser
- resonant cavity
- laser beam
- resonant
- resonance line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
Abstract
The present invention relates to laser acquisition fields, more particularly to a kind of laser and Optical Maser System.A kind of laser, comprising: laser source, for generating first laser beam；The set of at least two resonant cavities, the corresponding frequency of resonance line of each resonant cavity is different, and each set has intersection between each other；And at least two resonant cavity controllers, the resonant cavity controller and the resonant cavity correspond, for changing the resonance line of the resonant cavity；Wherein, the first laser beam successively passes through each resonant cavity, generates the shoot laser beam of the laser.Above-mentioned laser and Optical Maser System, frequency-selecting is carried out to the first laser beam by least two resonant cavity, and it is slowly varying by the resonance line that at least two resonant cavities controller controls at least two resonant cavity, to control the wavelength consecutive variations of the laser emitting laser beam, the consecutive election frequency function of laser is realized.
Description
Technical field
The present invention relates to laser acquisition fields, more particularly to a kind of laser and Optical Maser System.
Background technique
In the fields such as light sensing radar system and laser coherence detection, the adjustable narrow linewidth light source of frequency of use is needed.
Generally, using distributed feedback (DFB, distributed feedback) laser as the adjustable narrow linewidth light of frequency
Source, distributed feedback laser mostly use MEMS (Micro-Electro-Mechanical Systems, MEMS) or
Multiple-mode interfence (Multi-mode interferometer, MMI) coupler carries out wavelength selection output, can not accomplish continuous
Frequency sweep function.
Summary of the invention
Based on this, a kind of laser and Optical Maser System are provided, continuous frequency sweep function is able to achieve.
A kind of laser, comprising:
Laser source, for generating first laser beam；
The set of at least two resonant cavities, the corresponding frequency of resonance line of each resonant cavity is different, and respectively gathers phase
There is intersection between mutually；And
At least two resonant cavity controllers, the resonant cavity controller and the resonant cavity correspond, for changing institute
State the resonance line of resonant cavity；
Wherein, the first laser beam successively passes through each resonant cavity, generates the shoot laser beam of the laser.
The laser includes two resonant cavities, the resonance based on described two resonant cavities in one of the embodiments,
The intersection of spectral line selects the shoot laser beam of the laser.
The resonant cavity is ring resonator in one of the embodiments, and ring resonator structure is simple, narrow bandwidth,
And there is high quality factor Q (Quality factor, Q factor), use ring resonator as the laser
Outer-cavity structure can make laser obtain narrower outgoing line width.
There are two output ends for the laser tool in one of the embodiments,.
The resonant cavity controller is automatically controlled heater in one of the embodiments, using automatically controlled heater to described
Resonant cavity is heated, to make the light path of the resonant cavity change, so that resonance frequency changes.
The laser in one of the embodiments, further include:
Waveguide, for conducting laser beam；
Wherein, it is connected between the laser source and each resonant cavity by the waveguide, the transmission of the waveguide declines
Reduce, bandwidth.
The waveguide is silicon substrate ridge optical waveguide, single mode condition, mode distributions, polarizability in one of the embodiments,
It can be good.
The laser in one of the embodiments, further include:
Wedge-shaped coupler, for coupling the laser source and the silicon substrate ridge optical waveguide, coupling efficiency is high, can not change
Darkening is aligned in the case where road.
The operation material of the laser is indium gallium arsenic Quantum Well in one of the embodiments, has Low threshold, a large amount
Sub- efficiency, superior temperature characterisitic and and narrow line width.
A kind of Optical Maser System, comprising:
Silicon-based semiconductor chip；And
The laser as described in above-mentioned any one embodiment being integrated on the silicon-based semiconductor chip, adapted to be
The requirement that the miniaturization of system and on piece integrate.
Above-mentioned laser and Optical Maser System select the first laser beam by least two resonant cavity
Frequently, the resonance line for and by at least two resonant cavities controller controlling at least two resonant cavity is slowly varying, from
And the wavelength consecutive variations of the laser emitting laser beam are controlled, realize the consecutive election frequency function of laser.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of laser in one embodiment；
Fig. 2 is the schematic diagram of vernier alignment principles in one embodiment；
Fig. 3 is the structural schematic diagram of laser in another embodiment；
Fig. 4 is the structural schematic diagram of laser in another embodiment；
Fig. 5 is the schematic diagram of Optical Maser System in one embodiment.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, and
It is not used in the restriction present invention.
Tunable laser refer to can the continuous continually changing laser of output wavelength laser device, coherent light communication with
And the fields such as coherent detection, while needing light source that there is frequency can change and being wanted with narrow linewidth (narrow line width)
It asks, this just proposes very high requirement to the technology of tunable laser.Present tunable laser in coherent light communication
There is integrated tunable laser device assembly ITLA (Integrated Tunable Laser Assembly), have been directed to
Application in 100Gb/s PM-QPSK.But light sensing radar system and the laser coherence detection gradually risen now
Equal fields, it is desirable that tunable laser can carry out frequency sweep output under biggish output wavelength modulation range, i.e., laser is defeated
Frequency at any time can be with consecutive variations out, rather than dense wave division multipurpose (DWDM, Dense required by optic communication
Wavelength Division Multiplexing) 50GHz frequency interval.The LIDAR for the FMCW mode risen now
The more eager wavelength variable laser for needing one kind that can be scanned output of system, to complete the function of its detection.
And general now used tunable laser is distributed feedback laser, Distributed Feedback Laser is easy on piece and integrates but adopt more
MEMS or multi-mode interference coupler carry out wavelength selection output, can not accomplish continuous frequency sweep function.
Fig. 1 is the structural schematic diagram of laser in one embodiment, as shown in Figure 1, a kind of laser 10, it may include laser
Source 100, at least two resonant cavities 200 and at least two resonant cavity controllers 300, wherein the laser source 100 can be used for producing
The set of raw first laser beam, the corresponding frequency of resonance line of each resonant cavity 200 is different, and has between each set and hand over
Collection, the resonant cavity controller 300 are corresponded with the resonant cavity 200, can be used for changing the resonance spectrum of the resonant cavity 200
The corresponding frequency of line.
Specifically, the first laser beam that the laser source 100 generates has certain spectral range, and the spectral range is
It is determined by the type of laser source 100, specifically, the laser source includes operation material and pumping source, and the operation material can
For realizing population inversion to generate the stimulated radiation light amplification of light, to generate first laser beam, the operation material can be with
For solid (crystal, glass), gas (atomic gas, ionized gas, molecular gas), semiconductor and liquid etc., the working substance
The type of matter determines the spectral range of the laser source 100, for example, when operation material is GaAs (GaAs), cadmium sulfide
(CdS), indium phosphide (InP) or when zinc sulphide (ZnS), spectral range can reach 405nm-1550nm；The pumping source can be used for
Energy is provided realizing operation material and to maintain population inversion, the pumping source can be selected according to the type of operation material
It takes, the pumping source can take the modes such as optical excitation, gas discharge excitation, chemical pumping, nuclear energy excitation.
The resonant cavity 200 at least there are two, each resonant cavity 200 all have a specific resonance line, only have
Having the light wave of frequency corresponding with the resonance line could be emitted in the resonant cavity interior resonance and finally, the resonance line pair
The frequency answered needs to meet certain standing-wave condition；Standing-wave condition is the build-in attribute of each resonant cavity 200, with each resonant cavity 200
Light path it is related, each resonant cavity 200 is selected in light wave wherein, and the light wave for only meeting its standing-wave condition can be just chosen
It selects and finally be emitted, the standing-wave condition are as follows:
Wherein, vqFor by the frequency of selection wavelength, q is any positive integer, L ' be resonant cavity 200 light path (optical length,
That is the product of physical length and refractive index).
Because q is any positive integer, the light wave that can be theoretically got off by selection have it is numerous, meanwhile, because described first
Laser beam have certain spectral range, therefore, the first laser beam by the resonant cavity 200 select after produced it is multiple not
The light wave of same frequency, the light wave of the multiple different frequency are the humorous of spectral range and the resonant cavity of the first laser beam
The intersection of vibration spectral line.Laser 10 may include at least two resonant cavities 200, and each resonant cavity 200 is respectively provided with respective humorous
Shake spectral line, to have the frequency of light wave respectively selected, the first laser beam respectively enters each resonant cavity 200, and passes through
The selection of each resonant cavity 200 is crossed, only the light wave within the resonance line of two resonant cavities 200 could first simultaneously
Afterwards by each resonant cavity 200 and being finally emitted, the frequency for the light wave being finally emitted from the laser 10 be described at least
The part that two resonant spectral lines and the spectral range of first laser beam are overlapped.The resonance spectrum of each resonant cavity 200
There is intersection, if without intersection between each resonant cavity 200, finally without laser emitting between line.Specifically, resonant cavity 200
Number be at least two, two resonant cavities 200 can meet the function of wavelength selection.It should be noted that more than two
Resonant cavity is also able to achieve identical function, only stringenter to the requirement of resonant cavity, needs the humorous of more than two resonant cavities
The spectral line that shakes has intersection in the spectral range of first laser beam.
Specifically, at least two resonant cavity 200 has initial light path (initial refractive in one of the embodiments,
Rate, initial physical length), the type of each resonant cavity 200 is consistent, initial light path (initial index of refraction, initial physical length)
Also consistent.
The laser 10 includes at least two resonant cavity controllers 300 in one of the embodiments,.The resonant cavity
Controller 300 can be used for changing the resonance line of resonant cavity 200, to change final shoot laser beam.Specifically, described humorous
Vibration chamber controller 300 can be used for changing the light path of resonant cavity 200, can be used for changing the refractive index and/or physics of the resonant cavity
Length, for example, the refractive index of gas can be changed by changing temperature and/or pressure to change the light path of resonant cavity,
The long light path to change resonant cavity of chamber of resonant cavity, the type of the resonant cavity controller 300 can be changed by mechanical device
It can select according to resonant cavity 200, specifically repeat no more.
It should be noted that the resonant cavity controller 300 is used to be finely adjusted the light path of the resonant cavity 200, from
And guarantee that each resonance line small range changes, to ensure that the continuously adjustable of laser 10.
The resonant cavity 200 is ring resonator in one of the embodiments, and the ring resonator has high product
Quality factor so that final shoot laser beam has narrower outgoing line width, specifically, the Cavity surface smoothness of ring resonator with
And the shape and thickness of ring determine the Q value of resonant cavity, and then affect the line width of resonant cavity shoot laser.
Specifically, the ring resonator can pass through electron beam exposure (E-Bean in one of the embodiments,
Lithography method and use inductively coupled plasma body (ICP, Inductively Coupled Plasma)) carries out
Etching is completed to prepare.
It is that the resonant cavity controller 300 is automatically controlled heater in one of the embodiments.Specifically, two are utilized
The vernier alignment principles of ring resonator control the microcavity refractive index of the ring resonator by pyroelectric effect, adjust each institute
The Free Spectral Range (Free Spectral Range, FSR) for stating ring resonator 200, to change each annular resonance
The resonance line of chamber 200.The FSR of ring resonator can be obtained by following formula:
Wherein, ngFor the refractive index of the ring resonator, L is the optical length of the ring resonator, and R is the annular
The microcavity radius of resonant cavity.
Specifically, by each automatically controlled heater 300, each corresponding ring resonator 200 is heated, to make
The microcavity refractive index n of resonant cavity 200gIt changes respectively, and then changes the Free Spectral Range FSR of each resonant cavity 200.
The variation of FSR is so that the resonance line of each ring resonator 200 changes, so that the wavelength of the light wave of selection changes
Become, and finally changes the wavelength of shoot laser beam.By slowly continuously changing each automatically controlled heater 300, each institute can be made
Resonance line consecutive variations are stated, to realize the consecutive election frequency function of laser 10.
Fig. 2 is the schematic diagram of vernier alignment principles in one embodiment, as shown in Fig. 2, the laser 10 includes first
Resonant cavity and the second resonant cavity, black line is the resonance line of first resonant cavity in figure, and gray line is second resonance in figure
The resonance line of chamber, the spacing of adjacent two black lines represent the FSR of first resonant cavity, and the spacing of adjacent two gray lines represents
The FSR of second resonant cavity；The laser of only black line wavelength corresponding with intersection (i.e. the lap) of gray line could be from institute
It states and is emitted in laser 10；The laser 10 further includes the first resonant cavity controller and the second resonant cavity controller, and described
One resonant cavity controller is used to adjust the light path of first resonant cavity, and the second resonant cavity controller is for adjusting described the
The light path of two resonant cavities is adjusted the light path of each resonant cavity by each resonant cavity controller, to change each
The resonance line of the FSR of the resonant cavity, each resonant cavity also change accordingly, to change each resonant cavity
Resonance line lap, and finally change the wavelength of shoot laser beam.
The laser 10 include waveguide, the laser source 100 and adjacent resonant cavity in one of the embodiments,
It is connected between 200 and each resonant cavity 200 by the waveguide.The waveguide is silicon substrate ridge in one of the embodiments,
Optical waveguide, the silicon substrate ridge optical waveguide base material are silicon, are to be prepared using silicon substrate photoetching technique in silicon-on-insulator
(Silicon-On-Insulator, SOI) above, laser beam is related with its width in the propagation loss of the ridge waveguide.
The laser 10 further includes wedge-shaped coupler in one of the embodiments, and the wedge shape coupler is used for coupling
The laser source 100 and the silicon substrate ridge optical waveguide are closed, reactive ion etching (Reactive can be used in the wedge shape coupler
Ion Etching, RIE) technology and plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor
Deposition, PECVD) technology progress oxide deposition.
The laser source 100 may include operation material and pumping source in one of the embodiments,.The operation material is
Indium gallium arsenic Quantum Well, the pumping source are laser diode.Specifically, the indium gallium arsenic Quantum Well can be to use indium phosphide
(InP) indium gallium arsenic (InGaAs) Quantum Well (quantum well) of chip pregrown, can be by silicon-on-insulator SOI
Be bonded (Bond) pregrown indium gallium arsenic Quantum Well, then by chemically mechanical polishing (chemical mechanical polish,
CMP it) is completed with wet etching (wet etch).The pumping source can be laser diode, and the laser diode can excite institute
It states operation material and generates population inversion to generate laser.
A kind of Optical Maser System, the laser including silicon-based semiconductor chip and as described in above-mentioned any one embodiment
10, wherein the laser 10 is integrated on the silicon-based semiconductor chip, in the integrated design of on piece and preparation flow
Suit CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) technique,
The production method of system microminaturization and large scale integration is cooperated well.
Below with reference to specific application, laser in the application and Optical Maser System are described in detail:
Fig. 3 is the structural schematic diagram of laser in another embodiment, as shown in figure 3, a kind of laser, including laser
Source, first annular resonant cavity, the second ring resonator, the first automatically controlled heater, the second automatically controlled heater and more waveguides,
In, the waveguide is separately connected the operation material and the ring resonator, the automatically controlled heater and the annular resonance
Chamber, which corresponds, to be connected, for controlling the resonance frequency of the ring resonator, the first annular resonant cavity and described second
The radius of ring resonator is equal, and the laser source includes operation material and pumping source；Specifically, there are two the laser tools
Output end, described two output ends include the first output end and second output terminal, and first output end is defeated to couple clockwise
Outlet, the second output terminal are coupled output counterclockwise, and the first laser beam that the laser source generates passes sequentially through second
Ring resonator, operation material, first annular resonant cavity, respectively simultaneously through the second ring resonator and the selection of first annular resonant cavity
It is finally emitted from the first output end, the first laser beam that the laser source generates passes sequentially through first annular resonant cavity, working substance
Matter, the second ring resonator, respectively through first annular resonant cavity and the selection of the second ring resonator and finally from second output terminal
Outgoing.The laser further includes wedge-shaped coupler, and the wedge shape coupler makes to be emitted laser beam from the by heterojunction structure
One output end and/or second output terminal output (i.e. Single-end output).The effect that light couples clockwise and anticlockwise in the waveguide
Rate is different, therefore the optical power that coupled output and coupled output counterclockwise exports clockwise is different, i.e. the first output end with
The light emergent power of second output terminal is different.Specifically, during actual use, can adjust on demand the first output end and
The ratio between Output optical power of second output terminal also can control the laser, make the laser only have the first output end or
The work of person's second output terminal.
Fig. 4 is the structural schematic diagram of laser in another embodiment, as shown in figure 4, the laser source 100, each annular
Embodiment described in the connection relationship and Fig. 3 of resonant cavity 200 is variant, and the first laser beam being emitted from laser source 100 is successively passed through
Two ring resonators 200, and be no longer pass through operation material and carry out light amplification.
Fig. 5 is the structural schematic diagram of Optical Maser System in one embodiment, as shown in figure 5, a kind of Optical Maser System, including
Silicon-based semiconductor chip and laser, the laser include laser source, ring resonator and silicon substrate ridge optical waveguide,
In, the operation material of laser source is the indium gallium arsenic Quantum Well using indium phosphide eyeglass pregrown.The Optical Maser System is met
The requirement that actual application miniaturization and on piece integrate.Pass through integrated form tuneable laser system, Ke Yida in sheet above
To the output laser linewidth of hundred kHz (kHz) rank, while the adjustable spectral range that there is 40nm or so, and pass through thermoelectricity tune
The means of system achieve the effect that output laser be scanned modulation, meet coherent detection and laser radar system well
In requirement for swept light source, while CMOS technology can be suited in the integrated design of on piece and preparation flow, and be
The production method of system microminaturization and large scale integration cooperates well.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of laser characterized by comprising
Laser source, for generating first laser beam；
At least two resonant cavities, the set of the corresponding frequency of resonance line of each resonant cavity is different, and each set mutually it
Between have intersection；And
At least two resonant cavity controllers, the resonant cavity controller and the resonant cavity correspond, for changing described humorous
The resonance line of vibration chamber；
Wherein, the first laser beam successively passes through each resonant cavity, generates the shoot laser beam of the laser.
2. laser according to claim 1, which is characterized in that including two resonant cavities, be based on described two resonant cavities
Resonance line intersection, select the shoot laser beam of the laser.
3. laser according to claim 1, which is characterized in that the resonant cavity is ring resonator.
4. laser according to claim 3, which is characterized in that there are two output ends for the laser tool.
5. laser according to claim 3, which is characterized in that the resonant cavity controller is automatically controlled heater.
6. laser according to claim 1, which is characterized in that further include:
Waveguide, for conducting laser beam；
Wherein, it is connected between the laser source and each resonant cavity by the waveguide.
7. laser according to claim 6, which is characterized in that the waveguide is silicon substrate ridge optical waveguide.
8. laser according to claim 6, which is characterized in that further include:
Wedge-shaped coupler, for coupling the laser source and the silicon substrate ridge optical waveguide.
9. laser according to claim 1, which is characterized in that the operation material of the laser is indium gallium arsenic quantum
Trap.
10. a kind of Optical Maser System characterized by comprising
Silicon-based semiconductor chip；And
The laser as described in any one of claim 1~9 being integrated on the silicon-based semiconductor chip.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021056333A1 (en) * | 2019-09-26 | 2021-04-01 | 深圳市速腾聚创科技有限公司 | Laser frequency modulation method and apparatus, and storage medium and laser |
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