CN110047854A - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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CN110047854A
CN110047854A CN201910379840.6A CN201910379840A CN110047854A CN 110047854 A CN110047854 A CN 110047854A CN 201910379840 A CN201910379840 A CN 201910379840A CN 110047854 A CN110047854 A CN 110047854A
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cabling
metal layer
layer
signal
display panel
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CN110047854B (zh
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朱静
王添鸿
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201910379840.6A priority Critical patent/CN110047854B/zh
Publication of CN110047854A publication Critical patent/CN110047854A/zh
Priority to PCT/CN2019/113157 priority patent/WO2020224198A1/zh
Priority to US16/621,740 priority patent/US11239202B2/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133388Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13398Spacer materials; Spacer properties
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/16Materials and properties conductive
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/28Adhesive materials or arrangements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0404Matrix technologies
    • G09G2300/0408Integration of the drivers onto the display substrate
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/0426Layout of electrodes and connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/2902Disposition
    • H01L2224/29026Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body
    • H01L2224/29028Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body the layer connector being disposed on at least two separate bonding areas, e.g. bond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32104Disposition relative to the bonding area, e.g. bond pad
    • H01L2224/32106Disposition relative to the bonding area, e.g. bond pad the layer connector connecting one bonding area to at least two respective bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

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Abstract

本申请提供一种显示面板,其包括边框区域,所述边框区域包括一阵列基板和一彩膜基板;阵列基板包括用于设置扇出走线的扇出区;彩膜基板与所述阵列基板相对设置,所述彩膜基板包括一GOA电路和设置在所述GOA电路一侧的讯号走线,所述GOA电路电性连接于所述讯号走线;所述GOA电路和所述讯号走线均与所述扇出区重叠。本申请还涉及一显示装置。本申请通过将GOA电路和讯号走线设置在彩膜基板上并均与阵列基板上的扇出区重叠,从而节省了显示面板两侧的边框宽度。

Description

显示面板及显示装置
技术领域
本申请涉及一种显示技术,特别涉及一种显示面板及显示装置。
背景技术
如图1所示为现有技术的显示面板的示意图,显示面板包括显示区和设置在显示区外围的边框区,边框区由GOA(Gate Driver On Array)电路单元、GOA讯号走线(GOABusline)、公共电极(COM)三大部分构成。GOA讯号走线因应用于大尺寸高解析度产品,RCLoading(电容负载)较重,故而需要搭配GOA讯号走线设计较宽,进而需要的边框较大。
显示面板的成盒侧由导电胶(Seal)和基板组成,由于导电胶需要受紫外线(ultraviolet,UV)照射实现固化,阵列基板侧的走线的开口率符合一定的要求后,才能使导电胶固化良好。
受限于以上需求,导电胶与GOA讯号走线不重叠时,GOA讯号走线可以采用实心设计,若导电胶与GOA讯号走线重叠时,会将GOA讯号走线挖狭缝(slit)。为了保持有效的金属线宽,两者均需要的边框的宽度很大。
发明内容
本申请实施例提供一种显示面板及显示装置,以解决现有的显示面板对边框宽度需求较大的技术问题。
本申请实施例提供一种显示面板,包括显示区域和设置在所述显示区域一侧的边框区域,所述边框区域包括:
一阵列基板,包括用于设置扇出走线的扇出区;以及
一彩膜基板,与所述阵列基板相对设置,所述彩膜基板包括一GOA电路和设置在所述GOA电路一侧的讯号走线,所述GOA电路电性连接于所述讯号走线;
其中所述GOA电路和所述讯号走线均与所述扇出区重叠。
在本申请的显示面板的所述边框区域中,所述阵列基板包括讯号连接走线,所述讯号连接走线电性连接于绑定在所述阵列基板上的驱动芯片;
所述讯号走线通过导电胶与所述讯号连接走线电性连接。
在本申请的显示面板的所述边框区域中,所述GOA电路包括多个GOA电路单元,每一所述GOA电路单元包括多个薄膜晶体管和电性连接于所述薄膜晶体管的扫描讯号走线;所述阵列基板包括多条扫描讯号连接走线;
所述扫描讯号走线和所述扫描讯号连接走线通过导电胶一一对应电性连接。
在本申请的显示面板的所述边框区域中,所述扫描讯号走线通过所述扫描讯号连接走线电性连接于所述扫描线。
在本申请的显示面板中,所述扫描讯号连接走线的延伸方向垂直于所述扫描线的延伸方向。
在本申请的显示面板中,所述彩膜基板包括依次设置的第一基板、第一金属层、第一绝缘层、第二金属层、第二绝缘层、第一平坦层和第一透明导电层;
所述阵列基板包括依次设置的第二基板、第三金属层、第三绝缘层、第四金属层、第四绝缘层、第五金属层、第二平坦层和第二透明导电层;
在所述边框区域中,所述第一透明导电层和所述第二透明导电层通过所述导电胶电性连接。
在本申请的显示面板的所述边框区域中,所述讯号连接走线形成在所述第三金属层,所述讯号连接走线通过第一过孔连接于所述第四金属层,所述第四金属层通过第二过孔连接于所述第二透明导电层;
所述讯号走线形成于所述第一金属层,所述讯号走线通过第三过孔连接于所述第二金属层,所述第二金属层通过第四过孔连接于所述第一透明导电层。
在本申请的显示面板的所述边框区域中,所述扫描讯号连接走线形成于所述第五金属层,所述扫描讯号连接走线的一端通过第五过孔连接于所述第四金属层,所述第四金属层通过第六过孔连接所述第三金属层,所述扫描讯号连接走线的另一端通过第七过孔连接于所述第二透明导电层;
所述扫描讯号走线形成于所述第二金属层,所述扫描讯号走线通过第八过孔连接于所述第一透明导电层。
在本申请的显示面板的所述边框区域中,所述扇出走线形成于所述第三金属层。
本申请还涉及一种显示装置,其包括显示面板,所述显示面板包括显示区域和设置在所述显示区域一侧的边框区域,所述边框区域包括:
一阵列基板,包括用于设置扇出走线的扇出区;以及
一彩膜基板,与所述阵列基板相对设置,所述彩膜基板包括一GOA电路和设置在所述GOA电路一侧的讯号走线,所述GOA电路电性连接于所述讯号走线;
其中所述GOA电路和所述讯号走线均与所述扇出区重叠。
在本申请的显示面板的所述边框区域中,所述阵列基板包括讯号连接走线,所述讯号连接走线电性连接于绑定在所述阵列基板上的驱动芯片;
所述讯号走线通过导电胶与所述讯号连接走线电性连接。
在本申请的显示装置的所述边框区域中,所述GOA电路包括多个GOA电路单元,每一所述GOA电路单元包括多个薄膜晶体管和电性连接于所述薄膜晶体管的扫描讯号走线;所述阵列基板包括多条扫描讯号连接走线;
所述扫描讯号走线和所述扫描讯号连接走线通过导电胶一一对应电性连接。
在本申请的显示装置的所述边框区域中,所述扫描讯号走线通过所述扫描讯号连接走线电性连接于所述扫描线。
在本申请的显示装置中,所述扫描讯号连接走线的延伸方向垂直于所述扫描线的延伸方向。
在本申请的显示装置中,所述彩膜基板包括依次设置的第一基板、第一金属层、第一绝缘层、第二金属层、第二绝缘层、第一平坦层和第一透明导电层;
所述阵列基板包括依次设置的第二基板、第三金属层、第三绝缘层、第四金属层、第四绝缘层、第五金属层、第二平坦层和第二透明导电层;
在所述边框区域中,所述第一透明导电层和所述第二透明导电层通过所述导电胶电性连接。
在本申请的显示装置的所述边框区域中,所述讯号连接走线形成在所述第三金属层,所述讯号连接走线通过第一过孔连接于所述第四金属层,所述第四金属层通过第二过孔连接于所述第二透明导电层;
所述讯号走线形成于所述第一金属层,所述讯号走线通过第三过孔连接于所述第二金属层,所述第二金属层通过第四过孔连接于所述第一透明导电层。
在本申请的显示装置的所述边框区域中,所述扫描讯号连接走线形成于所述第五金属层,所述扫描讯号连接走线的一端通过第五过孔连接于所述第四金属层,所述第四金属层通过第六过孔连接所述第三金属层,所述扫描讯号连接走线的另一端通过第七过孔连接于所述第二透明导电层;
所述扫描讯号走线形成于所述第二金属层,所述扫描讯号走线通过第八过孔连接于所述第一透明导电层。
在本申请的显示装置的所述边框区域中,所述扇出走线形成于所述第三金属层。
相较于现有技术的显示面板,本申请的显示面板及显示装置通过将GOA电路和讯号走线设置在彩膜基板上并均与阵列基板上的扇出区重叠,从而节省了显示面板两侧的边框宽度;解决了现有的显示面板对边框宽度需求较大的技术问题。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图获取其他的附图。
图1为现有技术的显示面板的结构示意图;
图2为本申请的显示面板的实施例的结构示意图;
图3为本申请的显示面板的实施例的另一结构示意图。
具体实施方式
请参照附图中的图式,其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例,其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图2和图3,图2为本申请的显示面板的实施例的结构示意图;图3为本申请的显示面板的实施例的另一结构示意图。本申请实施例的显示面板100,其包括显示区域A和设置在显示区域A一侧的边框区域B。边框区域B包括一阵列基板11和一彩膜基板12。
阵列基板11包括用于设置扇出走线111的扇出区11a。彩膜基板12与阵列基板11相对设置。彩膜基板12包括一GOA电路121和设置在GOA电路121一侧的讯号走线122。GOA电路121电性连接于讯号走线122。
其中GOA电路121和讯号走线122均与扇出区11a重叠。
本申请实施例的显示面板100通过将GOA电路121和讯号走线122设置在彩膜基板12上并均与阵列基板11上的扇出区11a重叠,从而节省了显示面板两侧的边框宽度。
其中在边框区域B中,阵列基板11和彩膜基板12通过导电胶13固定连接。由于GOA电路121和讯号走线122设置在彩膜基板12上,故不会影响到从阵列基板11的背面照光,从而GOA电路121和讯号走线122的走线可以采用实心设计,无需考虑开口率而在走线中挖狭缝,进而缩小了GOA电路121和讯号走线122所需要的空间,进一步缩小了边框区域B的宽度。
需要说明的是,显示面板在成盒的制程中,阵列基板11和彩膜基板12在边框区域B通过导电胶13进行连接固定以及电性的导通。在成盒的过程中,导电胶13需要紫外线照射以促使导电胶13固化。而将GOA电路121和讯号走线122设置在彩膜基板12上,即将GOA电路121和讯号走线122设置在导电胶13的上方,因此光照直接透过阵列基板11照射于导电胶13,促使导电胶13固化。进而本实施例的GOA电路121和讯号走线122的走线可以采用实心设计。
另外,由于阵列基板11和彩膜基板12采用导电胶13的方式进行固定和电性连接,从而节省了进行焊盘(Transfer Pad)打点的制作时间,提高了制作效率。
具体的,在本实施例的显示面板100的边框区域B中,阵列基板11包括讯号连接走线112。讯号连接走线112电性连接于绑定在阵列基板11上的驱动芯片(图中未示出)。
讯号走线122通过导电胶13与讯号连接走线112电性连接。
在本实施例的显示面板100的边框区域B中,GOA电路121包括多个GOA电路单元12a。每一GOA电路单元12a包括多个薄膜晶体管124和电性连接于薄膜晶体管124的扫描讯号走线123。阵列基板11包括多条扫描讯号连接走线113。
扫描讯号走线123和扫描讯号连接走线113通过导电胶13一一对应电性连接。
在本实施例的显示面板100的边框区域B中,扫描讯号走线123通过扫描讯号连接走线113电性连接于扫描线114。其中,扫描讯号连接走线113将显示区域A内的Gate讯号拉到驱动芯片14对应侧的边框内,并通过导电胶13和GOA电路单元12a电性连接。
在本实施例的显示面板100中,扫描讯号连接走线113的延伸方向垂直于扫描线114的延伸方向。
具体的,在本实施例的显示面板100中,彩膜基板12包括依次设置的第一基板1201、第一金属层1202、第一绝缘层1203、第二金属层1204、第二绝缘层1205、第一平坦层1206和第一透明导电层1207。
阵列基板11包括依次设置的第二基板1101、第三金属层1102、第三绝缘层1103、第四金属层1104、第四绝缘层1105、第五金属层1106、第二平坦层1107和第二透明导电层1108。
在边框区域B中,第一透明导电层1207和第二透明导电层1108通过导电胶13电性连接。其中,第一透明导电层1207和第二透明导电层1108均为ITO层。
在本实施例的显示面板100的边框区域B中,讯号连接走线112形成在第三金属层1102。讯号连接走线112通过第一过孔101连接于第四金属层1104。第四金属层1104通过第二过孔102连接于第二透明导电层1108。
讯号走线122形成于第一金属层1202。讯号走线122通过第三过孔103连接于第二金属层1204。第二金属层1204通过第四过孔104连接于第一透明导电层1207。
其中,Gate讯号依次通过讯号连接走线112、第一过孔101、第四金属层1104、第二过孔102传导至第二透明导电层1108,然后依次通过导电胶13、第一透明导电层1207、第四过孔104、第二金属层1204、第三过孔103传导至讯号走线122,而讯号走线122将Gate讯号传导至GOA电路121。
在本实施例的显示面板100的边框区域B中,扫描讯号连接走线113形成于第五金属层1106。扫描讯号连接走线113的一端通过第五过孔105连接于第四金属层1104。第四金属层1104通过第六过孔106连接第三金属层1102。扫描讯号连接走线113的另一端通过第七过孔107连接于第二透明导电层1108。
其中薄膜晶体管124的栅极形成于第一金属层1202。薄膜晶体管124的源极和漏极形成于第二金属层1204。薄膜晶体管124的沟道区域形成于有源层1208。
扫描讯号走线123形成于第二金属层1204。扫描讯号走线123通过第八过孔108连接于第一透明导电层1207。
其中,GOA电路121的薄膜晶体管124发送驱动信号至扫描讯号走线123,并依次通过第八过孔108、第一透明导电层1207、导电胶13、第二透明导电层1108、第七过孔107、扫描讯号连接走线113、第五过孔105、第四金属层1104、第六过孔106传导至显示区域A的第三金属层1102的扫描线114。
在本实施例的显示面板100的边框区域B中,扇出走线111形成于第三金属层1102。其中扇出走线111位于GOA电路121和讯号走线122的下方。扇出走线111电性连接于驱动芯片14。在图3中,仅示出一扇出走线111,但在本实施中并不限于此。
在一些实施例中,扇出走线可形成于第四金属层。
本实施例的Gate讯号流是:Gate讯号从讯号连接走线113通过导电胶13传递至讯号走线122。然后Gate讯号从讯号走线122传递至GOA电路121中的GOA电路单元12a,以使GOA电路单元12a的薄膜晶体管124产生驱动讯号,并将驱动讯号从扫描讯号走线123通过导电胶13传递至扫描讯号连接走线113,最后传递至显示区A的扫描线114。
另外,在显示区A中,阵列基板11包括多个驱动薄膜晶体管115和设置在驱动薄膜晶体管115上的像素电极116。像素电极116形成于第二透明导电层1108。驱动薄膜晶体管115的栅极形成于第三金属层1102。驱动薄膜晶体管115的源极和漏极形成于第四金属层1104。驱动薄膜晶体管115的沟道区域形成于有源层1109。扫描线114形成于第三金属层1102。扫描线114电性连接于驱动薄膜晶体管115的栅极。
本申请还涉及一种显示装置,其包括显示面板,所述显示面板包括显示区域和设置在所述显示区域一侧的边框区域,所述边框区域包括:
一阵列基板,包括用于设置扇出走线的扇出区;以及
一彩膜基板,与所述阵列基板相对设置,所述彩膜基板包括一GOA电路和设置在所述GOA电路一侧的讯号走线,所述GOA电路电性连接于所述讯号走线;
其中所述GOA电路和所述讯号走线均与所述扇出区重叠。
在本申请的显示面板的所述边框区域中,所述阵列基板包括讯号连接走线,所述讯号连接走线电性连接于绑定在所述阵列基板上的驱动芯片;
所述讯号走线通过导电胶与所述讯号连接走线电性连接。
在本申请的显示装置的所述边框区域中,所述GOA电路包括多个GOA电路单元,每一所述GOA电路单元包括多个薄膜晶体管和电性连接于所述薄膜晶体管的扫描讯号走线;所述阵列基板包括多条扫描讯号连接走线;
所述扫描讯号走线和所述扫描讯号连接走线通过导电胶一一对应电性连接。
在本申请的显示装置的所述边框区域中,所述扫描讯号走线通过所述扫描讯号连接走线电性连接于所述扫描线。
在本申请的显示装置中,所述扫描讯号连接走线的延伸方向垂直于所述扫描线的延伸方向。
在本申请的显示装置中,所述彩膜基板包括依次设置的第一基板、第一金属层、第一绝缘层、第二金属层、第二绝缘层、第一平坦层和第一透明导电层;
所述阵列基板包括依次设置的第二基板、第三金属层、第三绝缘层、第四金属层、第四绝缘层、第五金属层、第二平坦层和第二透明导电层;
在所述边框区域中,所述第一透明导电层和所述第二透明导电层通过所述导电胶电性连接。
在本申请的显示装置的所述边框区域中,所述讯号连接走线形成在所述第三金属层,所述讯号连接走线通过第一过孔连接于所述第四金属层,所述第四金属层通过第二过孔连接于所述第二透明导电层;
所述讯号走线形成于所述第一金属层,所述讯号走线通过第三过孔连接于所述第二金属层,所述第二金属层通过第四过孔连接于所述第一透明导电层。
在本申请的显示装置的所述边框区域中,所述扫描讯号连接走线形成于所述第五金属层,所述扫描讯号连接走线的一端通过第五过孔连接于所述第四金属层,所述第四金属层通过第六过孔连接所述第三金属层,所述扫描讯号连接走线的另一端通过第七过孔连接于所述第二透明导电层;
所述扫描讯号走线形成于所述第二金属层,所述扫描讯号走线通过第八过孔连接于所述第一透明导电层。
在本申请的显示装置的所述边框区域中,所述扇出走线形成于所述第三金属层。
相较于现有技术的显示面板,本申请的显示面板及显示装置通过将GOA电路和讯号走线设置在彩膜基板上并均与阵列基板上的扇出区重叠,从而节省了显示面板两侧的边框宽度;解决了现有的显示面板对边框宽度需求较大的技术问题。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种显示面板,包括显示区域和设置在所述显示区域一侧的边框区域,其特征在于,所述边框区域包括:
一阵列基板,包括用于设置扇出走线的扇出区;以及
一彩膜基板,与所述阵列基板相对设置,所述彩膜基板包括一GOA电路和设置在所述GOA电路一侧的讯号走线,所述GOA电路电性连接于所述讯号走线;
其中所述GOA电路和所述讯号走线均与所述扇出区重叠。
2.根据权利要求1所述的显示面板,其特征在于,在所述边框区域中,所述阵列基板包括讯号连接走线,所述讯号连接走线电性连接于绑定在所述阵列基板上的驱动芯片;
所述讯号走线通过导电胶与所述讯号连接走线电性连接。
3.根据权利要求2所述的显示面板,其特征在于,在所述边框区域中,所述GOA电路包括多个GOA电路单元,每一所述GOA电路单元包括多个薄膜晶体管和电性连接于所述薄膜晶体管的扫描讯号走线;所述阵列基板包括多条扫描讯号连接走线;
所述扫描讯号走线和所述扫描讯号连接走线通过导电胶一一对应电性连接。
4.根据权利要求3所述的显示面板,其特征在于,在所述边框区域中,所述扫描讯号走线通过所述扫描讯号连接走线电性连接于所述扫描线。
5.根据权利要求4所述的显示面板,其特征在于,所述扫描讯号连接走线的延伸方向垂直于所述扫描线的延伸方向。
6.根据权利要求4所述的显示面板,其特征在于,所述彩膜基板包括依次设置的第一基板、第一金属层、第一绝缘层、第二金属层、第二绝缘层、第一平坦层和第一透明导电层;
所述阵列基板包括依次设置的第二基板、第三金属层、第三绝缘层、第四金属层、第四绝缘层、第五金属层、第二平坦层和第二透明导电层;
在所述边框区域中,所述第一透明导电层和所述第二透明导电层通过所述导电胶电性连接。
7.根据权利要求6所述的显示面板,其特征在于,在所述边框区域中,所述讯号连接走线形成在所述第三金属层,所述讯号连接走线通过第一过孔连接于所述第四金属层,所述第四金属层通过第二过孔连接于所述第二透明导电层;
所述讯号走线形成于所述第一金属层,所述讯号走线通过第三过孔连接于所述第二金属层,所述第二金属层通过第四过孔连接于所述第一透明导电层。
8.根据权利要求6所述的显示面板,其特征在于,在所述边框区域中,所述扫描讯号连接走线形成于所述第五金属层,所述扫描讯号连接走线的一端通过第五过孔连接于所述第四金属层,所述第四金属层通过第六过孔连接所述第三金属层,所述扫描讯号连接走线的另一端通过第七过孔连接于所述第二透明导电层;
所述扫描讯号走线形成于所述第二金属层,所述扫描讯号走线通过第八过孔连接于所述第一透明导电层。
9.根据权利要求6所述的显示面板,其特征在于,在所述边框区域中,所述扇出走线形成于所述第三金属层。
10.一种显示装置,其特征在于,包括一权利要求1-9任一项所述的显示面板。
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