CN110045173B - Bidirectional current detection circuit - Google Patents
Bidirectional current detection circuit Download PDFInfo
- Publication number
- CN110045173B CN110045173B CN201910437978.7A CN201910437978A CN110045173B CN 110045173 B CN110045173 B CN 110045173B CN 201910437978 A CN201910437978 A CN 201910437978A CN 110045173 B CN110045173 B CN 110045173B
- Authority
- CN
- China
- Prior art keywords
- resistor
- operational amplifier
- mosfet
- negative electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 26
- 230000002457 bidirectional effect Effects 0.000 title abstract description 21
- 238000005070 sampling Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims description 43
- 239000010408 film Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
Abstract
The invention discloses a bidirectional current detection circuit which comprises an operational amplifier U1, an operational amplifier U2, a MOSFET V1 and a MOSFET V2, wherein the non-inverting input end of the operational amplifier U1 is connected with the positive electrode of an input resistor R11 in series, the negative electrode of the resistor R11 is connected with the positive electrode of a BATTERY BATTERY, the negative electrode of the BATTERY BATTERY is grounded, the negative electrode of the BATTERY BATTERY is connected with the positive electrode of a sampling resistor R4 in series, and the negative electrode of the resistor R4 is connected with a POWER terminal. The bidirectional current detection circuit adopts a detection circuit consisting of a set of two-stage operational amplifier and a voltage dividing resistor network, can detect bidirectional current, and does not need two sets of detection circuits; the amplified detection voltage is directly adopted to supply power, an auxiliary power supply is not needed to supply power to the operational amplifier U1, the components are reduced, the PCB space is saved, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of current detection, in particular to a bidirectional current detection circuit.
Background
In order to accurately control the output current of the bidirectional power supply, the conventional method is to amplify the voltage signal on the sampling resistor by using a double operational amplifier, and then feed back the amplified signal voltage to the control end, so as to achieve the purpose of controlling the output current.
Because the existing method needs an auxiliary power supply to supply power and the polarity of the bidirectional current cannot be well processed, two acquisition lines and a power supply line must be run to an operational amplifier during design, so that the wiring difficulty is increased and the PCB area is increased; based on the above problems, a bidirectional current detection circuit is provided.
Disclosure of Invention
The invention aims to provide a bidirectional current detection circuit which has the advantages of no need of auxiliary power supply, bidirectional detection current realization, component reduction, PCB space saving and cost reduction, and solves the problems in the prior art.
In order to achieve the above purpose, the present invention provides the following technical solutions: the bidirectional current detection circuit comprises an operational amplifier U1, an operational amplifier U2, a MOSFET V1 and a MOSFET V2, wherein the in-phase input end of the operational amplifier U1 is connected with the positive electrode of a precise thin film input resistor R11 in series, the negative electrode of the precise thin film input resistor R11 is connected with the positive electrode of a BATTERY BATTERY, the negative electrode of the BATTERY BATTERY is grounded, the positive electrode of the BATTERY BATTERY is connected with the positive electrode of a sampling resistor R4 in series, and the negative electrode of the resistor R4 is connected with a POWER terminal; the reverse input end of the operational amplifier U1 is connected with the positive electrode of the precise thin film input resistor R1, and the negative electrode of the precise thin film input resistor R1 is connected with the negative electrode of the sampling resistor R4;
the negative electrode of the precise thin film input resistor R1 is connected with the positive electrode of the resistor R5, the negative electrode of the resistor R5 is connected with the common end of the operational amplifier U1, the negative electrode of the precise thin film input resistor R11 is connected with the positive electrode of the resistor R6, and the negative electrode of the resistor R6 is connected with the common end of the operational amplifier U1;
the grid electrode of the MOSFET V1 is connected with the upper output end of the operational amplifier U1, the source electrode of the MOSFET V1 is connected with the output end of the resistor R1, and the drain electrode of the MOSFET V1 is connected with the reverse input end of the operational amplifier U2; the grid electrode of the MOSFET V2 is connected with the lower output end of the operational amplifier U1, the source electrode of the MOSFET V2 is connected with the output end of the precision thin film input resistor R11, the drain electrode of the MOSFET V2 is connected with the non-inverting input end of the operational amplifier U2, the drain electrode of the MOSFET V1 is connected with the feedback resistor R2 to be grounded, and the drain electrode of the MOSFET V2 is connected with the feedback resistor R8 to be grounded;
the output end of the operational amplifier U2 is connected with the positive electrode of the feedback resistor R3, the negative electrode of the feedback resistor R3 is connected with the reverse input end of the operational amplifier U2, and the output end of the feedback resistor R3 is connected with the output terminal OUT; the non-inverting input end of the operational amplifier U2 is connected in series with a feedback resistor R9 and a reference voltage dividing resistor R7, the negative electrode of the reference voltage dividing resistor R7 is connected with a reference voltage REF terminal, and two ends of the reference voltage dividing resistor R7 are connected in parallel with a reference voltage dividing resistor R10;
the model numbers of the operational amplifier U1 and the operational amplifier U2 are OPA1632; the resistance value of the resistor R5 is equal to that of the resistor R6; the resistance values of the feedback resistor R2 and the feedback resistor R8 are equal; the resistance values of the feedback resistor R2 and the feedback resistor R8 are larger than the resistance values of the resistor R5 and the resistor R6.
Compared with the prior art, the invention has the beneficial effects that: when the BATTERY BATTERY discharge balance current is zero, the voltage of the output terminal OUT is equal to the reference voltage set by the reference voltage REF terminal; when current flows through the sampling resistor R4, voltage drop of Vsense is generated, the generated voltage drop of Vsense is supplied to the operational amplifier U1 through the precision film input resistor R1 and the precision film input resistor R11 to convert input voltage into differential current, and the differential current is amplified through the operational amplifier U1, the MOSFET V1 and the MOSFET V2 so as to keep zero balance at the input end of the operational amplifier U1; under the condition that no input signal is generated, when current passes through the sampling resistor R4, the generated voltage drop of Vsense is unbalanced through the currents of the precise thin film input resistor R1 and the precise thin film input resistor R11, the unbalanced currents at two ends are respectively sent to the MOSFET tube V1 and the MOSFET tube V2 after passing through the operational amplifier U1, the currents at two ends are adjusted to be in a balanced state, the difference of the currents of the feedback resistor R2 and the feedback resistor R8 is in direct proportion to the amplitude and the polarity of the Vsense, and because the feedback resistor R2 and the feedback resistor R8 are larger than the precise thin film input resistor R1 and the precise thin film input resistor R11, when the currents are the same, the gains of the currents are R2/R1 and R8/R11; the operational amplifier U2 samples the voltage difference between the feedback resistor R2 and the feedback resistor R8, compares and amplifies the voltage with a reference voltage (Vref) for 5 times to output, the final output voltage is the voltage obtained by amplifying the Vsense differential input voltage and the reference voltage provided on the REF pin, and the bidirectional current detection circuit directly connects the output voltage to the SCN end and the SCP end in application; the whole detection circuit formed by a set of two-stage operational amplifier and a voltage dividing resistor network is adopted, so that bidirectional current can be detected without two sets of detection circuits; the amplified detection voltage is directly adopted for power supply, so that the same monitored voltage can be used for power supply, and when the PCB is distributed, the intermediate power supply voltage is not required to be wired to the load power of which the current is being monitored, an auxiliary power supply is not required to be adopted for supplying power to the operational amplifier U1, so that components are reduced, the PCB space is saved, and the cost is reduced.
Drawings
FIG. 1 is a circuit diagram of the present invention;
FIG. 2 is a graph of the bi-directional transfer function of the 1.2V reference voltage of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-2, a bidirectional current detection circuit includes an operational amplifier U1, an operational amplifier U2, a MOSFET V1 and a MOSFET V2, where the types of the operational amplifier U1 and the operational amplifier U2 are OPA1632, the non-inverting input end of the operational amplifier U1 is connected in series with the positive electrode of a precision thin film input resistor R11, the negative electrode of the precision thin film input resistor R11 is connected with the positive electrode of a BATTERY, the negative electrode of the BATTERY is grounded, the positive electrode of the BATTERY is connected in series with the positive electrode of a sampling resistor R4, and the negative electrode of the resistor R4 is connected with a POWER terminal; the reverse input end of the operational amplifier U1 is connected with the positive electrode of the precise thin film input resistor R1, and the negative electrode of the precise thin film input resistor R1 is connected with the negative electrode of the sampling resistor R4;
the negative electrode of the precise thin film input resistor R1 is connected with the positive electrode of the resistor R5, the negative electrode of the resistor R5 is connected with the common end of the operational amplifier U1, the negative electrode of the precise thin film input resistor R11 is connected with the positive electrode of the resistor R6, the negative electrode of the resistor R6 is connected with the common end of the operational amplifier U1, and the resistance values of the resistor R5 and the resistor R6 are equal;
the grid electrode of the MOSFET V1 is connected with the upper output end of the operational amplifier U1, the source electrode of the MOSFET V1 is connected with the output end of the resistor R1, and the drain electrode of the MOSFET V1 is connected with the reverse input end of the operational amplifier U2; the grid electrode of the MOSFET V2 is connected with the lower output end of the operational amplifier U1, the source electrode of the MOSFET V2 is connected with the output end of the precision thin film input resistor R11, the drain electrode of the MOSFET V2 is connected with the non-inverting input end of the operational amplifier U2, the drain electrode of the MOSFET V1 is connected with the feedback resistor R2 to be grounded, and the drain electrode of the MOSFET V2 is connected with the feedback resistor R8 to be grounded; the resistance values of the feedback resistor R2 and the feedback resistor R8 are equal, and the resistance values of the feedback resistor R2 and the feedback resistor R8 are larger than the resistance values of the resistor R5 and the resistor R6;
the output end of the operational amplifier U2 is connected with the positive electrode of the feedback resistor R3, the negative electrode of the feedback resistor R3 is connected with the reverse input end of the operational amplifier U2, and the output end of the feedback resistor R3 is connected with the output terminal OUT; the non-inverting input end of the operational amplifier U2 is connected in series with a feedback resistor R9 and a reference voltage dividing resistor R7, the negative electrode of the reference voltage dividing resistor R7 is connected with a reference voltage REF terminal, and two ends of the reference voltage dividing resistor R7 are connected in parallel with a reference voltage dividing resistor R10.
The bidirectional current detection circuit comprises the following overall modules: the sampling resistor R4 is connected in series in the current loop to collect sampling voltage signals; the resistor R5 and the resistor R6 form a voltage dividing resistor network to generate a common-mode voltage signal; the operational amplifier U1, the precise thin film input resistor R11, the feedback resistor R2, the feedback resistor R8, the MOSFET V1 and the MOSFET V2 form a first-stage operational amplifier, and the sampling resistor signal is amplified and converted into a differential mode signal to be supplied to a second-stage operational amplifier; the operational amplifier U2, the feedback resistor R3, the feedback resistor R9, the reference voltage dividing resistor R7 and the reference voltage dividing resistor R10 form a second-stage operational amplifier, and the differential mode signal is discharged and then output; the working principle is as follows: when the BATTERY BATTERY discharge balance current is zero, the voltage drop of the sampling resistor R4 is zero, and the voltage of the output terminal OUT is equal to the reference voltage set by the reference voltage REF terminal; when current flows through the sampling resistor R4, voltage drop of Vsense is generated on the sampling resistor R4, the voltage of the sampling resistor R4 is detected and is connected to input SCP and SCN pins of the first-stage operational amplifier, the voltage on each input pin forms current through a precision thin film input resistor R1 and a precision thin film input resistor R11, and an input common-mode voltage is provided for the inside of the operational amplifier U1 by an SCP input end and an SCN input end through a resistor R5 and a resistor R6; the generated Vsense voltage drop is supplied to the operational amplifier U1 through the precision thin film input resistor R1 and the precision thin film input resistor R11, the input voltage is converted into a differential current through the precision thin film input resistor R1 and the precision thin film input resistor R11, and the differential current is amplified through the operational amplifier U1, the MOSFET tube V1 and the MOSFET tube V2, so that the input end of the operational amplifier U1 is kept in zero balance.
Under the condition that no input signal is generated, the currents of the precise thin film input resistor R1 and the precise thin film input resistor R11 are equal, when the current passes through the sampling resistor R4, the generated Vsense voltage drop is unbalanced through the currents of the precise thin film input resistor R1 and the precise thin film input resistor R11 and is not equal any more, the unbalanced currents at two ends are respectively sent to the MOSFET V1 and the MOSFET V2 after passing through the operational amplifier U1 so as to correct the current imbalance, and the differential currents are grounded through the feedback resistor R2 and the feedback resistor R8 (the resistance value of the feedback resistor R2 and the feedback resistor R8 can be 400 k), so that the difference of the currents entering the feedback resistor R2 and the feedback resistor R8 is in direct proportion to the amplitude and the polarity of the Vsense; since the feedback resistor R2 and the feedback resistor R8 are larger than the precision thin film input resistor R1 and the precision thin film input resistor R11, the gains are R2/R1 and R8/R11 when the currents are the same, and the resistance values of the various voltage gains are shown in the following table 1
Table 1: voltage gain resistance meter
The operational amplifier U2 samples the voltage difference between the feedback resistor R2 and the feedback resistor R8, compares and amplifies the voltage with the reference voltage (Vref) for 5 times to output, and finally outputs the voltage which is the voltage obtained by amplifying the Vsense differential input voltage plus the reference voltage provided on the REF pin, and when the 1.2V reference voltage is used, the bidirectional transfer function of the 1.2V reference voltage is shown in FIG. 2; the bidirectional current detection circuit is applied by directly connecting output voltage to the SCN end and the SCP end, wherein the voltage difference between the SCN end and the SCP end is controlled to be 0.6V at maximum, and VCC is controlled to be 3-65V.
In summary, in the bidirectional current detection circuit provided by the invention, when the BATTERY discharge balance current is zero, the output terminal OUT voltage is equal to the reference voltage set by the reference voltage REF terminal; when current flows through the sampling resistor R4, voltage drop of Vsense is generated, the generated voltage drop of Vsense is supplied to the operational amplifier U1 through the precision film input resistor R1 and the precision film input resistor R11 to convert input voltage into differential current, and the differential current is amplified through the operational amplifier U1, the MOSFET V1 and the MOSFET V2 so as to keep zero balance at the input end of the operational amplifier U1; under the condition that no input signal is generated, when current passes through the sampling resistor R4, the generated voltage drop of Vsense is unbalanced through the currents of the precise thin film input resistor R1 and the precise thin film input resistor R11, the unbalanced currents at two ends are respectively sent to the MOSFET tube V1 and the MOSFET tube V2 after passing through the operational amplifier U1, the currents at two ends are adjusted to be in a balanced state, the difference of the currents of the feedback resistor R2 and the feedback resistor R8 is in direct proportion to the amplitude and the polarity of the Vsense, and because the feedback resistor R2 and the feedback resistor R8 are larger than the precise thin film input resistor R1 and the precise thin film input resistor R11, when the currents are the same, the gains of the currents are R2/R1 and R8/R11; the operational amplifier U2 samples the voltage difference between the feedback resistor R2 and the feedback resistor R8, compares and amplifies the voltage with a reference voltage (Vref) for 5 times to output, the final output voltage is the voltage obtained by amplifying the Vsense differential input voltage and the reference voltage provided on the REF pin, and the bidirectional current detection circuit directly connects the output voltage to the SCN end and the SCP end in application; the whole detection circuit formed by a set of two-stage operational amplifier and a voltage dividing resistor network is adopted, so that bidirectional current can be detected without two sets of detection circuits; the amplified detection voltage is directly adopted for power supply, so that the same monitored voltage can be used for power supply, and when the PCB is distributed, the intermediate power supply voltage is not required to be wired to the load power of which the current is being monitored, an auxiliary power supply is not required to be adopted for supplying power to the operational amplifier U1, so that components are reduced, the PCB space is saved, and the cost is reduced.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (1)
1. The utility model provides a two-way current detection circuit, includes operational amplifier U1, operational amplifier U2, MOSFET pipe V1 and MOSFET pipe V2, its characterized in that: the non-inverting input end of the operational amplifier U1 is connected in series with the positive electrode of the precise thin film input resistor R11, the negative electrode of the precise thin film input resistor R11 is connected with the positive electrode of the BATTERY BATTERY, the negative electrode of the BATTERY BATTERY is grounded, the positive electrode of the BATTERY BATTERY is connected in series with the positive electrode of the sampling resistor R4, and the negative electrode of the resistor R4 is connected with the POWER terminal; the reverse input end of the operational amplifier U1 is connected with the positive electrode of the precise thin film input resistor R1, and the negative electrode of the precise thin film input resistor R1 is connected with the negative electrode of the sampling resistor R4;
the negative electrode of the precise thin film input resistor R1 is connected with the positive electrode of the resistor R5, the negative electrode of the resistor R5 is connected with the common end of the operational amplifier U1, the negative electrode of the precise thin film input resistor R11 is connected with the positive electrode of the resistor R6, and the negative electrode of the resistor R6 is connected with the common end of the operational amplifier U1;
the grid electrode of the MOSFET V1 is connected with the upper output end of the operational amplifier U1, the source electrode of the MOSFET V1 is connected with the output end of the precision thin film input resistor R1, and the drain electrode of the MOSFET V1 is connected with the reverse input end of the operational amplifier U2; the grid electrode of the MOSFET V2 is connected with the lower output end of the operational amplifier U1, the source electrode of the MOSFET V2 is connected with the output end of the precision thin film input resistor R11, the drain electrode of the MOSFET V2 is connected with the non-inverting input end of the operational amplifier U2, the drain electrode of the MOSFET V1 is connected with the feedback resistor R2 to be grounded, and the drain electrode of the MOSFET V2 is connected with the feedback resistor R8 to be grounded;
the output end of the operational amplifier U2 is connected with the positive electrode of the feedback resistor R3, the negative electrode of the feedback resistor R3 is connected with the reverse input end of the operational amplifier U2, and the output end of the feedback resistor R3 is connected with the output terminal OUT; the non-inverting input end of the operational amplifier U2 is connected in series with a feedback resistor R9 and a reference voltage dividing resistor R7, the negative electrode of the reference voltage dividing resistor R7 is connected with a reference voltage REF terminal, and two ends of the reference voltage dividing resistor R7 are connected in parallel with a reference voltage dividing resistor R10;
the model numbers of the operational amplifier U1 and the operational amplifier U2 are OPA1632; the resistance value of the resistor R5 is equal to that of the resistor R6; the resistance values of the feedback resistor R2 and the feedback resistor R8 are equal; the resistance values of the feedback resistor R2 and the feedback resistor R8 are larger than the resistance values of the resistor R5 and the resistor R6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910437978.7A CN110045173B (en) | 2019-05-24 | 2019-05-24 | Bidirectional current detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910437978.7A CN110045173B (en) | 2019-05-24 | 2019-05-24 | Bidirectional current detection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110045173A CN110045173A (en) | 2019-07-23 |
| CN110045173B true CN110045173B (en) | 2024-02-06 |
Family
ID=67283537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910437978.7A Active CN110045173B (en) | 2019-05-24 | 2019-05-24 | Bidirectional current detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110045173B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007218664A (en) * | 2006-02-15 | 2007-08-30 | Hitachi Ltd | Electrical current detector |
| KR20110083129A (en) * | 2010-01-13 | 2011-07-20 | 주식회사 지멕스 | Circuit for detecting a current |
| CN203643497U (en) * | 2013-12-24 | 2014-06-11 | 青岛伏科太阳能有限公司 | Current detection circuit of photovoltaic system |
| CN107607770A (en) * | 2016-09-15 | 2018-01-19 | 成都芯源系统有限公司 | Current sampling circuit, switch circuit and current sampling method |
| CN107659151A (en) * | 2017-04-24 | 2018-02-02 | 深圳市华芯邦科技有限公司 | Buck load current detection circuits and method without external sampling resistance |
| CN207069606U (en) * | 2017-04-15 | 2018-03-02 | 四川新三甲电子科技有限公司 | Battery protection balanced device |
| CN108107241A (en) * | 2017-12-01 | 2018-06-01 | 浙江大学 | A kind of novel probe structure of stable drain voltage |
| CN109374945A (en) * | 2018-09-12 | 2019-02-22 | 杭州展虹科技有限公司 | Current detection circuit |
| CN209979728U (en) * | 2019-05-24 | 2020-01-21 | 杭州科工电子科技有限公司 | Bidirectional current detection circuit |
-
2019
- 2019-05-24 CN CN201910437978.7A patent/CN110045173B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007218664A (en) * | 2006-02-15 | 2007-08-30 | Hitachi Ltd | Electrical current detector |
| KR20110083129A (en) * | 2010-01-13 | 2011-07-20 | 주식회사 지멕스 | Circuit for detecting a current |
| CN203643497U (en) * | 2013-12-24 | 2014-06-11 | 青岛伏科太阳能有限公司 | Current detection circuit of photovoltaic system |
| CN107607770A (en) * | 2016-09-15 | 2018-01-19 | 成都芯源系统有限公司 | Current sampling circuit, switch circuit and current sampling method |
| CN207069606U (en) * | 2017-04-15 | 2018-03-02 | 四川新三甲电子科技有限公司 | Battery protection balanced device |
| CN107659151A (en) * | 2017-04-24 | 2018-02-02 | 深圳市华芯邦科技有限公司 | Buck load current detection circuits and method without external sampling resistance |
| CN108107241A (en) * | 2017-12-01 | 2018-06-01 | 浙江大学 | A kind of novel probe structure of stable drain voltage |
| CN109374945A (en) * | 2018-09-12 | 2019-02-22 | 杭州展虹科技有限公司 | Current detection circuit |
| CN209979728U (en) * | 2019-05-24 | 2020-01-21 | 杭州科工电子科技有限公司 | Bidirectional current detection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110045173A (en) | 2019-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201229513Y (en) | Low voltage difference linear voltage regulator | |
| CN106774580B (en) | A kind of LDO circuit of fast transient response high PSRR | |
| CN108957065B (en) | Electronic load circuit | |
| CN203882224U (en) | Program-controlled constant-current source circuit | |
| CN104035468A (en) | Voltage regulator | |
| CN106168828A (en) | A kind of power supply circuits with overcurrent protection function | |
| CN106124840A (en) | Current detection circuit | |
| CN110289820A (en) | A kind of operation amplifier circuit | |
| CN201007805Y (en) | Digital type adjustable constant-current constant voltage source | |
| CN110231846B (en) | Power module feedback control circuit with constant current and constant voltage dual functions | |
| CN107707210A (en) | A kind of zeroing high-gain differential amplifier circuit certainly | |
| CN110045173B (en) | Bidirectional current detection circuit | |
| CN209979728U (en) | Bidirectional current detection circuit | |
| CN107844155A (en) | One kind bypasses constant-current source circuit in parallel | |
| CN107171650A (en) | Variable-gain amplification circuit | |
| TW201145812A (en) | Fast class AB output stage | |
| CN101847973A (en) | Automatic gain control circuit for receiving end of power-line carrier communication system | |
| CN107219392B (en) | Real-time current signal data processing system | |
| CN203365520U (en) | Power supply current detection device | |
| CN113514690A (en) | High-precision wide-range current measuring system | |
| CN202794317U (en) | Zero cross detection circuit structure | |
| CN107645280A (en) | High speed amplifying circuit | |
| CN201994847U (en) | Inductance peak current detection circuit in DC-DC (direct current-direct current) converter | |
| CN206878787U (en) | A kind of automatic gain control circuit | |
| CN109391232B (en) | Current detection device applied to photovoltaic power optimizer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Room 201, Building 1, No. 358 Jinpeng Street, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province, 310030 Applicant after: Hangzhou Kegong Electronic Technology Co.,Ltd. Address before: Building 5, 3rd Floor, No. 6 Xiyuan Fifth Road, Xihu Science and Technology Park, Xihu District, Hangzhou City, Zhejiang Province, 310030 Applicant before: HANGZHOU KEGONG ELECTRONIC TECHNOLOGY CO.,LTD. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |