CN110034367A - High isolation broadband power divider based on vertical ellipse coupled structure - Google Patents
High isolation broadband power divider based on vertical ellipse coupled structure Download PDFInfo
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- CN110034367A CN110034367A CN201910324754.5A CN201910324754A CN110034367A CN 110034367 A CN110034367 A CN 110034367A CN 201910324754 A CN201910324754 A CN 201910324754A CN 110034367 A CN110034367 A CN 110034367A
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- oval
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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Abstract
The invention discloses a kind of high isolation broadband power dividers based on multilayer ellipse defect ground structure, the power splitter includes three-decker, it is successively top layer signals layer, intermetallic metal stratum and bottom layer signal layer from top to bottom, top layer signals layer includes top layer dielectric substrate and first input port, the first output port, second output terminal mouth, the first oval transmission unit, the second oval transmission unit, third ellipse transmission unit and the first T-type function separation structure and impedance matching circuit;Intermetallic metal stratum includes the first oval defect ground unit, the second oval defect ground unit and third ellipse defect ground unit;Bottom layer signal layer includes underlying dielectric substrate, the second input port, third output port, the 4th output port, the 4th oval transmission unit, the 5th oval transmission unit, the 6th oval transmission unit and the second T-type function separation structure and impedance matching circuit.High isolation broadband power divider structure of the invention is simple, has excellent performance.
Description
Technical field
The invention belongs to microwave transmission device technical fields, and in particular to it is a kind of based on vertical ellipse coupled structure it is high every
From broadband power divider.
Background technique
Power splitter is used as a kind of vital element in wireless communication and phased array system, at present in power amplification
It is widely used in device, antenna feed and other multichannels distribution network.
In modern radar communication, the use of large scale array antenna and the higher transmission rate of signal cause to compel to be essential
A kind of high isolation broadband power divider that can be applied under large-power occasions is sought, and traditional Wilkinson power divider is asked due to heat dissipation
The limitation of topic and relative bandwidth, has been unable to satisfy up-to-date technology demand, Gysel power splitter solves heat dissipation problem, but opposite band
It is wide only there was only 20%, how to realize that high isolation broadband power divider becomes one of the hot spot that people study at present.
Summary of the invention
The purpose of the present invention is to provide a kind of height based on vertical ellipse coupled structure for meeting high-power applications occasion
Broadband power divider is isolated.
Realize the technical solution of the object of the invention: a kind of high isolation broadband function based on vertical ellipse coupled structure point
Device, including top layer signals layer, intermetallic metal stratum and bottom layer signal layer;
Top layer signals layer include top layer medium substrate, first input port, the first oval transmission unit, first transmission line,
First T-type function separation structure and its impedance matching circuit, second transmission line, third transmission line, the second oval transmission unit, third are ellipse
Circle transmission unit, the first output port, second output terminal mouth;Intermetallic metal stratum includes the first oval defect ground unit, second
Oval defect ground unit and third ellipse defect ground unit;Bottom layer signal layer includes underlying dielectric substrate, the second input port,
Four oval transmission units, the 4th transmission line, the second T-type function separation structure and its impedance matching circuit, the 5th transmission line, the 5th ellipse
Transmission unit, third output port, the 6th transmission line, the 6th oval transmission unit, the 4th output port;
The top layer signals layer and bottom layer signal layer are about intermetallic metal stratum mirror symmetry;Described first oval transmission is single
Member and the 4th oval transmission unit be with being located at the first oval defect above and below unit, the second oval transmission unit and
5th oval transmission unit is with being located at the second oval defect above and below unit, third ellipse transmission unit and the 6th
Oval transmission unit is with being located at third ellipse defect above and below unit.
Compared with prior art, remarkable advantage of the invention are as follows: (1) high isolation broadband power divider of the invention is using vertical
Oval coupled structure can be realized the close coupling between transmission line, achieve under lesser insertion loss wider opposite
Bandwidth, and centre frequency is controllable;(2) high isolation broadband power divider lacking due to isolation resistance of the invention, have relatively
Low insertion loss;(3) high isolation broadband power divider structure of the invention is simple, easy to process.
Detailed description of the invention
Fig. 1 is the top layer signals schematic diagram of a layer structure of high isolation broadband power divider of the invention.
Fig. 2 is the intermetallic metal earth formation schematic diagram of high isolation broadband power divider of the invention.
Fig. 3 is the bottom layer signal schematic diagram of a layer structure of high isolation broadband power divider of the invention.
Fig. 4 is the frequency response chart of high isolation broadband power divider of the invention.
Specific embodiment
A kind of high isolation broadband power divider based on vertical ellipse coupled structure, including top layer signals layer, intermetallic metal
Layer and bottom layer signal layer;
As shown in Figure 1, top layer signals layer includes top layer medium substrate 1, the oval transmission unit of first input port 2, first
3, first transmission line 4, the first T-type function separation structure and its impedance matching circuit 5, second transmission line 6, third transmission line 9, second are ellipse
Circle transmission unit 7, third ellipse transmission unit 10, the first output port 8, second output terminal mouth 11;As shown in Fig. 2, intermediate gold
Possession layer includes the first oval defect ground oval defect of unit 13, second ground unit 15 and third ellipse defect ground unit 14;Such as
Shown in Fig. 3, bottom layer signal layer includes underlying dielectric substrate 16, the oval biography of transmission unit the 18, the 4th of the second input port the 17, the 4th
Defeated line 19, the second T-type function separation structure and its impedance matching circuit 20, the 5th transmission line the 26, the 5th oval transmission unit 25, third
Output port 24, the 6th transmission line the 23, the 6th oval transmission unit 22, the 4th output port 21;
The top layer signals layer and bottom layer signal layer are about intermetallic metal stratum mirror symmetry;Described first oval transmission is single
With being located at the first oval defect above and below unit 13, the second ellipse is transmitted for member 3 and the 4th oval transmission unit 18
With being located at the second oval defect above and below unit 15, third ellipse is passed for unit 7 and the 5th oval transmission unit 25
Defeated unit 10 and the 6th oval transmission unit 22 are with being located at third ellipse defect above and below unit 14.
The oval transmission unit 3 of first input port 2, first, first transmission line 4 are sequentially connected, and first transmission line 4 passes through the
One T-type function separation structure and its impedance matching circuit 5 are connected with second transmission line 6 and third transmission line 9, second transmission line 6 and
Two oval transmission units 7, the first output port 8 are sequentially connected, and third transmission line 9 and third ellipse transmission unit 10, second are defeated
Exit port 11 is sequentially connected;The oval transmission unit 18 of second input port the 17, the 4th, the 4th transmission line 19 are sequentially connected, and the 4th
Transmission line 19 is connect by the second T-type function separation structure and its impedance matching circuit 20 with the 5th transmission line 26, the 6th transmission line 23,
5th transmission line 26 is sequentially connected with the 5th oval transmission unit 25, third output port 24, the 6th transmission line 23 and the 6th ellipse
Circle transmission unit 22, the 4th output port 21 are sequentially connected.
The described first oval transmission unit 7 of oval transmission unit 3, second, the oval biography of third ellipse transmission unit the 10, the 4th
The oval transmission unit 25 of defeated unit the 18, the 5th and the 6th oval transmission unit 22 have same shape and size, and phase
Minor matters with length are located at oval transmission unit two sides;First T-type function separation structure and the second function separation structure and its match circuit have
After thering is same shape and size, match circuit to be located at T-type function separation structure output end.
Top layer medium substrate 1, underlying dielectric substrate 16 are the RO4350B that dielectric constant is 3.66, with a thickness of
0.254mm。
First oval defect unit, the second oval defect unit and third ellipse defect unit be in metal ground layer
Ellipse element made of etching.
Oval transmission unit and oval defect ground unit long axis width having the same.
Signal is flowed into from first input port, then signal is flowed out from third output port and the 4th output port;Signal from
Second input port flows into, then signal is flowed out from the first output port and second output terminal mouth.
Change the power splitter S parameter performance by changing the oval transmission unit size, and the coefficient of coup further through
Change centre frequency and oval transmission unit length shaft length with ellipse defect unit length shaft length and change.Pass through adjusting
The length for minor matters of opening a way optimizes the power splitter S parameter performance.
The following describes the present invention in detail with reference to examples.
Embodiment
High isolation broadband power divider based on vertical ellipse coupled structure, including top layer signals layer, intermetallic metal stratum, bottom
Layer signal layer.
As shown in Figure 1, top layer signals layer includes top layer medium substrate 1, first input port 2, the first oval transmission unit
3, first transmission line 4, the first function separation structure and its match circuit 5, second transmission line 6 and third transmission line 9, the second ellipse transmit
Unit 7 and third ellipse transmission unit 10, the first output port 8 and second output terminal mouth 11.First 3 both ends of oval transmission unit
First input port 2 is connected with first transmission line 4 respectively, and first transmission line 4 is connected to the first function separation structure and its match circuit 5,
It is connected again with second transmission line 6 and third transmission line 9, second transmission line 6 and third transmission line 9 are single with the second oval transmission respectively
Member 7 and third ellipse transmission 10 are connected to the first output port 8 and second output terminal mouth 11, and top layer medium substrate 1 is dielectric constant
For 3.66 RO4350B, with a thickness of 0.254mm.
As shown in Fig. 2, intermetallic metal stratum includes the first oval defect ground unit 13, the second oval defect ground 15 He of unit
Third ellipse defect ground unit 14 is located between the first oval transmission unit 3 and the 4th oval transmission unit 18, and second is ellipse
Between circle transmission unit 7 and the 5th oval transmission unit 25, third ellipse transmission unit 10 and the 6th ellipse transmission unit 22 it
Between.
As shown in figure 3, bottom layer signal layer includes underlying dielectric substrate 16, the second input port 17, the 4th oval transmission list
Member 18, the 4th transmission line 19, the second function separation structure and its match circuit 20, the 5th transmission line 21 and the 6th transmission line 26, the 5th
Oval transmission unit 25 and the 6th oval transmission unit 22, third output port 24 and the 4th output port 21.4th oval biography
Defeated 18 both ends of unit distinguish the second input port 17 and are connected with the 4th transmission line 19, and the 4th transmission line 19 is connected to the second function separation structure
And its match circuit 20, then be connected with the 5th transmission line 21 and the 6th transmission line 26, the 5th transmission line 21 and the 6th transmission line 26
Third output port 24 and the 4th output port 21, bottom are connected to the 5th oval transmission unit 25 and the 6th oval transmission 22 respectively
Layer medium substrate 16 is the RO4350B that dielectric constant is 3.66, with a thickness of 0.254mm.
First used in the present embodiment oval defect ground unit 13, the second oval defect unit 15 and third ellipse lack
Falling into ground unit 14 is the ellipsoidal structure etched on metal ground plate, the micro-strip on top layer medium substrate, underlying dielectric substrate
Patch and intermetallic metal stratum are all made of copper product.
Simulation calculation is carried out to the novel high isolation broadband filter using electromagnetic simulation software HFSS, Fig. 4 is the function point
The simulation calculation of device frequency response characteristic as a result, wherein oval transmission unit and oval defect unit long axis l=
7.2mm, the short axle Dm=4.8mm of oval transmission unit, oval defect unit short axle Ds=7.4mm.Simulation result shows,
This example bandwidth range is 4GHz to 10GHz, and relative bandwidth reaches 100%, has broadband character.Wideband interpolation enters loss and is less than
4dB, output port return loss are less than -15dB, and isolation is less than -20dB between output port.
To sum up, broadband high-isolation power divider provided by the invention has many advantages, such as that broadband, isolation are big, loss is small, simultaneously
The structure is relatively simple, is suitble to be widely used in all kinds of communication networks.
Claims (6)
1. a kind of high isolation broadband power divider based on vertical ellipse coupled structure, which is characterized in that including top layer signals layer, in
Between metal ground layer and bottom layer signal layer;
Top layer signals layer includes top layer medium substrate (1), first input port (2), the first oval transmission unit (3), the first biography
It is defeated line (4), the first T-type function separation structure and its impedance matching circuit (5), second transmission line (6), third transmission line (9), second ellipse
Circle transmission unit (7), third ellipse transmission unit (10), the first output port (8) and second output terminal mouth (11);Intermetallic metal
Stratum includes the first oval defect ground unit (13), the second oval defect ground unit (15) and third ellipse defect ground unit
(14);Bottom layer signal layer includes underlying dielectric substrate (16), the second input port (17), the 4th oval transmission unit (18), the
Four transmission lines (19), the second T-type function separation structure and its impedance matching circuit (20), the 5th transmission line (26), the 5th oval transmission
Unit (25), third output port (24), the 6th transmission line (23), the 6th oval transmission unit (22) and the 4th output port
(21);
The top layer signals layer and bottom layer signal layer are about intermetallic metal stratum mirror symmetry;Described first oval transmission unit
(3) and the 4th oval transmission unit (18) is with being located at the first oval defect above and below unit (13), and second is oval
Transmission unit (7) and the 5th oval transmission unit (25) be with being located at the second oval defect above and below unit (15),
Third ellipse transmission unit (10) and the 6th oval transmission unit (22) with being located at third ellipse defect unit (14) it is upper
Side and lower section.
2. the high isolation broadband power divider according to claim 1 based on vertical ellipse coupled structure, which is characterized in that the
One input port (2), the first oval transmission unit (3), first transmission line (4) are sequentially connected, and first transmission line (4) passes through first
T-type function separation structure and its impedance matching circuit (5) are connected with second transmission line (6) and third transmission line (9), second transmission line
(6) it is sequentially connected with the second oval transmission unit (7), the first output port (8), third transmission line (9) and third ellipse transmit
Unit (10), second output terminal mouth (11) are sequentially connected;Second input port (17), the 4th oval transmission unit (18), the 4th
Transmission line (19) is sequentially connected, and the 4th transmission line (19) passes through the second T-type function separation structure and its impedance matching circuit (20) and the
Five transmission lines (26), the connection of the 6th transmission line (23), the 5th transmission line (26) are exported with the 5th oval transmission unit (25), third
Port (24) is sequentially connected, and the 6th transmission line (23) successively connects with the 6th oval transmission unit (22), the 4th output port (21)
It connects.
3. the high isolation broadband power divider according to claim 1 based on vertical ellipse coupled structure, which is characterized in that institute
State the first oval transmission unit (3), the second oval transmission unit (7), third ellipse transmission unit (10), the 4th oval transmission list
First (18), the 5th oval transmission unit (25) and the 6th oval transmission unit (22) have same shape and size, and
The minor matters of equal length are located at oval transmission unit two sides;First T-type function separation structure and the second function separation structure and its match circuit
With same shape and size, after match circuit is located at T-type function separation structure output end.
4. the high isolation broadband power divider according to claim 1 based on vertical ellipse coupled structure, which is characterized in that top
Layer medium substrate (1) dielectric constant is 3.66, with a thickness of 0.254mm.
5. the high isolation broadband power divider according to claim 1 based on vertical ellipse coupled structure, which is characterized in that bottom
Layer medium substrate (16) dielectric constant is 3.66, with a thickness of 0.254mm.
6. the high isolation broadband power divider according to claim 1 based on vertical ellipse coupled structure, which is characterized in that the
One oval defect unit, the second oval defect unit and third ellipse defect unit be made of metal ground layer etching
Ellipse element.
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Cited By (2)
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CN116315561A (en) * | 2023-05-16 | 2023-06-23 | 石家庄银河微波技术股份有限公司 | One-to-three power divider and antenna system |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113871830A (en) * | 2020-06-30 | 2021-12-31 | 富华科精密工业(深圳)有限公司 | Balun structure and electronic device with same |
CN116315561A (en) * | 2023-05-16 | 2023-06-23 | 石家庄银河微波技术股份有限公司 | One-to-three power divider and antenna system |
CN116315561B (en) * | 2023-05-16 | 2023-08-04 | 石家庄银河微波技术股份有限公司 | One-to-three power divider and antenna system |
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Application publication date: 20190719 |