CN203644921U - Gysel power dividing filter with high power dividing ratio - Google Patents
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Abstract
The utility model discloses a Gysel non-equant power divider with a high power dividing ratio. The Gysel non-equant power divider comprises an upper micro-strip structure, isolation elements, an intermediate medium substrate and a lower grounding metal plate. Each Gysel non-equant power divider with the high power dividing ratio comprises two impedance converters between which the phase difference is 90 degrees, four quarter-wavelength branch lines different in characteristic impedance and two isolation resistors. By changing coupling intensity of a resonator, input and output impedance of each impedance converter can be adjusted so as to carry out power distribution of different ratios and to realize coupling. Compared with a Gysel power divider in which a quarter-wavelength impedance line is adopted between an input terminal and an output terminal, the Gysel non-equant power divider is capable of realizing the high power dividing ratio, the bandwidth of the Gysel non-equant power divider can be controlled at will, at the same time, two transmission zero points can be created at the edge of a passband, and the frequency selectivity is improved. According to the utility model, the power dividing ratio reaches up to 10:1, and the Gysel non-equant power divider is applicable to many antenna array fields.
Description
Technical Field
The utility model relates to a power distribution ware with high power divides ratio, concretely relates to can be applied to radio frequency front end circuit area filtering function's Gysel merit divides wave filter with high power divides ratio.
Background
Power dividers are a fundamental part of microwave circuits and are used in many antenna arrays and balanced circuits because of their ability to separate and combine signals.
Over the past several decades, there has been a great deal of research on power splitters. The focus of research is on broadening the band, reducing the area, dual frequency response and harmonic rejection.
In many high-power radio frequency systems, an arbitrary power division ratio is required, however, a high-power circuit is required in terms of heat dissipation, the traditional wilkinson power divider is difficult to realize, and in contrast, the external resistance of the Gysel power divider can dissipate heat well, and the effect of the high power division ratio cannot be achieved by changing the power division ratio on the basis of the wilkinson power divider or the Gysel power divider in the past research. Most of the methods are limited to changing the impedance of the microstrip line to change the power division ratio, but the high power division ratio requires the microstrip line with high impedance, which is difficult to realize in practice.
Consider the demand of radio frequency front end high power divider ratio antenna array, the utility model provides a neotype Gysel power divider filter that has high power divider ratio. Compared with the traditional Gysel power division filter, the utility model adds an impedance converter with 90-degree phase shift at the center frequency to replace the high-impedance microstrip line with the quarter wavelength in the power division filter. After the design, the power division ratio can reach 10:1, the bandwidth can be controlled randomly, and meanwhile, two transmission zeros can be created at the edge of a pass band, so that the frequency selectivity is improved.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome the above-mentioned not enough that prior art exists, propose the Gysel merit that has high merit ratio and divide the wave filter. The utility model discloses in, each high merit divides than Gysel unequal power divider includes that two have the impedance converter of 90 degrees phase differences, four different characteristic impedance's quarter wavelength's branch line and two isolation resistance. The input and output impedance of each impedance transformer can be adjusted by changing the coupling strength between the resonators and the port position to perform different ratios of power distribution and achieve matching. Compared with a Gysel power divider using a quarter-wavelength impedance line between an input port and an output port, the structure can realize high power division ratio, the bandwidth of the Gysel power divider can be controlled randomly, and meanwhile, two transmission zeros can be created at the edge of a pass band, so that the frequency selectivity is improved. Because the power divider is added with the impedance converter with the filtering function, the size of the input impedance of the filter can be changed by changing the coupling strength of the impedance converter, and the functions of frequency selection and power division with high power division ratio can be realized at the same time.
For realizing the purpose of the utility model, the utility model discloses the technical scheme who adopts as follows:
the Gysel power division filter with the high power division ratio comprises an upper layer microstrip structure, an isolation element, a middle layer dielectric substrate and a lower layer grounding metal plate, wherein the upper layer microstrip structure is attached to the upper surface of the middle layer dielectric plate, and the lower surface of the middle layer dielectric plate is grounding metal; the upper layer microstrip structure comprises two impedance transformers with 90-degree phase shift and four quarter-wavelength branch lines with different characteristic impedances; the two impedance transformers have different resonator spacing, share one input port as an input port (I/P) of a Gysel power division filter with a high power division ratio, and output ports of the two impedance transformers serve as a first output port (O/P1) and a second output port (O/P2) of the Gysel power division filter with the high power division ratio; four quarter-wavelength branch lines are connected in sequence between the first output port O/P1 and the second output port O/P2; the isolation element comprises a first isolation resistor and a second isolation resistor; the first isolation resistance is between the first quarter-wavelength branch line and the second quarter-wavelength branch line, and the second isolation resistance is between the third quarter-wavelength branch line and the fourth quarter-wavelength branch line.
The four quarter-wavelength branch lines between the output port O/P1 and the output port O/P2 of the Gysel power division filter with the high power division ratio have different characteristic impedances so as to realize good isolation and matching between the output ports; a first isolation resistance is between the first and second quarter-wavelength branch lines and a second isolation resistance is between the third and fourth quarter-wavelength branch lines to achieve good isolation between the output ports.
In the Gysel power division filter with the high power division ratio, the impedance converter positioned above the Gysel power division filter is formed by coupling two half-wavelength resonators which are respectively a first resonator and a second resonator; the first resonator is a microstrip line with an open circuit at one end and formed by connecting a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line, a ninth microstrip line, a tenth microstrip line, an eleventh microstrip line, a twelfth microstrip line, a thirteenth microstrip line and a fourteenth microstrip line; the second resonator is formed by connecting microstrip lines which are centrosymmetric with the first resonator; the first microstrip line of the first resonator is connected with the input port (I/P), and the corresponding microstrip line of the second resonator is connected with the first output port (O/P1); the impedance converter positioned below is formed by coupling two half-wavelength resonators, namely a third resonator and a fourth resonator; the third resonator is a microstrip line with one open end formed by connecting a fifteenth microstrip line, a sixteenth microstrip line, a seventeenth microstrip line, an eighteenth microstrip line, a nineteenth microstrip line, a twentieth microstrip line, a twenty-first microstrip line, a twenty-second microstrip line, a twenty-third microstrip line, a twenty-fourth microstrip line, a twenty-fifth microstrip line, a twenty-sixth microstrip line, a twenty-seventh microstrip line and a twenty-eighth microstrip line; the fourth resonator is formed by connecting microstrip lines which are centrosymmetric with the third resonator; a fifteenth microstrip line of the third resonator is connected with the input port (I/P), and a corresponding microstrip line of the fourth resonator is connected with the second output port (O/P2); the quarter-wavelength branch lines with different characteristic impedances consist of a first quarter-wavelength branch line, a second quarter-wavelength branch line, a third quarter-wavelength branch line and a fourth quarter-wavelength branch line; the first quarter-wavelength branch line is formed by sequentially connecting a twenty-ninth microstrip line, a thirty-third microstrip line, a thirty-eleventh microstrip line, a thirty-second microstrip line, a thirty-third microstrip line and a thirty-fourth microstrip line; the second quarter-wavelength branch line is formed by sequentially connecting a thirty-fifth microstrip line, a thirty-sixth microstrip line, a thirty-seventh microstrip line, a thirty-eighth microstrip line and a thirty-ninth microstrip line; the third quarter-wavelength branch line is formed by sequentially connecting a forty-th microstrip line, a forty-first microstrip line, a forty-second microstrip line, a forty-third microstrip line, a forty-fourth microstrip line, a forty-fifth microstrip line and a forty-sixth microstrip line; the fourth quarter-wavelength branch line is formed by sequentially connecting a forty-seventh microstrip line, a forty-eighth microstrip line, a forty-ninth microstrip line, a fifty-fifth microstrip line and a fifty-first microstrip line; the twenty-ninth microstrip of the first quarter-wavelength branch is connected to the first output port (O/P1), and the fifty-first microstrip of the fourth quarter-wavelength branch is connected to the second output port (O/P2).
In the Gysel power division filter with a high power division ratio, the input impedance of the upper impedance converter is different from the input impedance of the lower impedance converter, so that unequal power distribution can be realized. The input and output impedance of each impedance transformer can be adjusted by changing the coupling strength between the resonators and the position of the port so as to carry out power distribution with different ratios and realize matching, and compared with a Gysel power divider using a quarter-wavelength impedance line between an input port and an output port, the structure can replace the function of a high-impedance transmission line, realize high power ratio, and can be controlled at will in bandwidth, and the structure can also realize a high-selectivity filtering function.
The Gysel power division filter with the high power division ratio is obtained by changing the coupling strength of the coupling microstrip line; wherein, the coupling strength between the resonators is changed by changing the distance between the two half-wavelength resonators, and the high power ratio of 10:1 between the first output port O/P1 and the second output port O/P2 can be realized by adjusting the distance between the first resonator and the second resonator and the distance between the third resonator and the fourth resonator; the coupling strength between the first resonator and the second resonator is changed by changing the coupling distance between the eighth microstrip line and the fourteenth microstrip line of the first resonator and the two opposite microstrip lines of the second resonator; the coupling strength between the third resonator and the fourth resonator is changed by changing the coupling distance between the twenty-second microstrip line and the twenty-eighth microstrip line of the third resonator and the corresponding two-end microstrip line of the fourth resonator; in addition, the coupling distance between the two resonators of the Gysel power division filter with any power division ratio ranges from 0.1mm to 3 mm.
The length of the half-wavelength resonator of the Gysel power division filter with high power division ratioLIs the resonant frequency of the impedance transformerfCorresponding wavelengthλOne half of (a); wherein,Lis the actual microstrip line length.
Compared with the prior art, the utility model has the advantages of as follows:
(1) the Gysel power division filter with the high power division ratio has the power division ratio up to 10:1, and can be applied to an antenna array with the high power division ratio.
(2) Compared with a Gysel power divider using a quarter-wavelength impedance line between an input port and an output port, the coupling structure can replace the function of a high-impedance transmission line, high power ratio is realized, the bandwidth can be controlled at will, and the structure can also realize a high-selectivity filtering function.
Drawings
Fig. 1 is 10:1 structure diagram of Gysel power division filter with high power division ratio;
fig. 2 is a structural diagram of the resonator 1 and the resonator 2 in fig. 1;
fig. 3 is a structural view of the resonator 3 and the resonator 4 in fig. 1;
FIG. 4a is a graph of the transmission characteristics of a 10:1 Gysel power division filter with a high power division ratio;
figure 4b is the output return loss and isolation coefficient of a 10:1 Gysel power division filter with a high power division ratio.
Detailed description of the preferred embodiments
The present invention will be described in further detail with reference to the accompanying drawings, but the scope of the invention is not limited to the following examples.
As shown in fig. 1, the structure diagram of the Gysel power division filter with a high power division ratio includes an upper layer microstrip structure, an isolation element, an intermediate layer dielectric substrate and a lower layer grounding metal plate, the upper layer microstrip structure is attached to the upper surface of the intermediate layer dielectric plate, and the lower surface of the intermediate layer dielectric plate is the grounding metal; the upper layer microstrip structure comprises two impedance transformers with 90-degree phase shift and four quarter-wavelength branch lines with different characteristic impedances; the two impedance transformers have different resonator spacing; the two impedance transformers share one input port as an input port (I/P) of a Gysel power division filter with a high power division ratio, and output ports of the two impedance transformers serve as a first output port (O/P1) and a second output port (O/P2) of the Gysel power division filter with the high power division ratio; four quarter-wavelength branch lines are connected in sequence between the first output port O/P1 and the second output port O/P2; the isolation element comprises a first isolation resistor R1 and a second isolation resistor R2; a first isolation resistance R1 is between the first and second quarter-wavelength branch lines and a second isolation resistance R2 is between the third and fourth quarter-wavelength branch lines.
As shown in fig. 1, the impedance transformer located above is formed by coupling two half-wavelength resonators, namely a first resonator 1 and a second resonator 2; the first resonator 1 is a microstrip line with an open circuit at one end, which is formed by connecting a first microstrip line 9, a second microstrip line 10, a third microstrip line 11, a fourth microstrip line 12, a fifth microstrip line 13, a sixth microstrip line 14, a seventh microstrip line 15, an eighth microstrip line 16, a ninth microstrip line 17, a tenth microstrip line 18, an eleventh microstrip line 19, a twelfth microstrip line 20, a thirteenth microstrip line 21 and a fourteenth microstrip line 22; the second resonator 2 is formed by connecting microstrip lines which are centrosymmetric with the first resonator 1; the first microstrip line 9 of the first resonator 1 is connected with an input port (I/P), and the corresponding microstrip line of the microstrip lines of the second resonator 2 is connected with a first output port (O/P1); the impedance converter positioned below is formed by coupling two half-wavelength resonators, namely a third resonator 3 and a fourth resonator 4; the third resonator 3 is a microstrip line with an open circuit at one end, which is formed by connecting a fifteenth microstrip line 23, a sixteenth microstrip line 24, a seventeenth microstrip line 25, an eighteenth microstrip line 26, a nineteenth microstrip line 27, a twentieth microstrip line 28, a twenty-first microstrip line 29, a twenty-second microstrip line 30, a twenty-third microstrip line 31, a twenty-fourth microstrip line 32, a twenty-fifth microstrip line 33, a twenty-sixth microstrip line 34, a twenty-seventh microstrip line 35, a twenty-eighth microstrip line 36; the fourth resonator 4 is formed by connecting microstrip lines which are centrosymmetric with the third resonator 3; the fifteenth microstrip line 23 of the third resonator 3 is connected to the input port (I/P), and the corresponding microstrip line of the microstrip lines of the fourth resonator 4 is connected to the second output port (O/P2); the quarter-wave branch lines with different characteristic impedances are composed of a first quarter-wave branch line 5, a second quarter-wave branch line 6, a third quarter-wave branch line 7 and a fourth quarter-wave branch line 8; the first quarter-wavelength branch line 5 is formed by sequentially connecting a twenty-ninth microstrip line 37, a thirty-third microstrip line 38, a thirty-first microstrip line 39, a thirty-second microstrip line 40, a thirty-third microstrip line 41 and a thirty-fourth microstrip line 42; the second quarter-wavelength branch line 6 is formed by sequentially connecting a thirty-fifth microstrip line 43, a thirty-sixth microstrip line 44, a thirty-seventh microstrip line 45, a thirty-eighth microstrip line 46 and a thirty-ninth microstrip line 47; the third quarter-wavelength branch line 7 is formed by sequentially connecting a forty-first microstrip line 48, a forty-first microstrip line 49, a forty-second microstrip line 50, a forty-third microstrip line 51, a forty-fourth microstrip line 52, a forty-fifth microstrip line 53 and a forty-sixth microstrip line 54; the fourth quarter-wavelength branch line 8 is formed by sequentially connecting a forty-seventh microstrip line 55, a forty-eighth microstrip line 56, a forty-ninth microstrip line 57, a fifty-fifth microstrip line 58 and a fifty-first microstrip line 59; the twenty-ninth microstrip line 37 of the first quarter-wave line 5 is connected to the first output port (O/P1), and the fifty-first microstrip line 59 of the fourth quarter-wave line 8 is connected to the second output port (O/P2).
As shown in fig. 1, each impedance transformer consists of two half-wavelength resonator couplings; length of half-wavelength resonatorLIs the resonant frequency of the impedance transformerfCorresponding wavelengthλOne fourth of (a); wherein,Lis the actual microstrip line length.
In fig. 1, the input and output impedances of each impedance transformer can be adjusted by changing the coupling strength between the resonators and the port position to perform power distribution at different ratios and achieve matching, and this structure can achieve a high power division ratio and its bandwidth can be arbitrarily controlled, and at the same time, two transmission zeros can be created at the edges of the pass band to improve frequency selectivity, compared to a Gysel power divider using a quarter-wavelength impedance line between the input port and the output port. Just because the input and output impedance of the impedance transformer can be adjusted by changing the coupling strength between the resonators to obtain power distribution with different ratios and realize port matching, the impedance transformer can be used for replacing a quarter-wavelength transmission line used in the traditional power divider to realize the function of impedance transformation, and the matching state can be achieved only by adjusting the input and output impedance, so that any power division ratio can be realized.
As shown in fig. 2, the resonator 1 and the resonator 2 in fig. 1 are placed in central symmetry; the coupling strength between the resonators is changed by adjusting the distance between the resonator 1 and the resonator 2.
As shown in fig. 3, the resonator 3 and the resonator 4 in fig. 1 are placed in central symmetry; the coupling strength between the resonators is changed by adjusting the distance between the resonator 3 and the resonator 4.
Examples
The Gysel power divider with the power distribution ratio of 10:1 has a structure shown in fig. 1, wherein the thickness of the dielectric substrate is 0.81mm, and the relative dielectric constant is 3.38.
FIGS. 4a and 4b are simulation results of the transmission characteristics of a Gysel power division filter with a 10:1 power division ratio designed according to FIG. 1 above; the horizontal axis in the transmission characteristic graph represents frequency and the vertical axis represents transmission characteristic, where S11Shows the return loss, S, of a Gysel power division filter with a high power division ratio21Indicating the insertion loss, S, from the first output port to the input port when the input ports match31Indicating the insertion loss from the second output port to the input port when the input ports match; according to simulation results, the center frequency of the passband is 2GHz, the bandwidth is 10%, two transmission zeros are generated near the edges of the passband, and the insertion loss S in the bandwidth21Is-1.45 dB, S31Is-11.4 dB, the echo and isolation are better than 15 dB.
Simulation results of the embodiments show that the device of the present invention can achieve a power division ratio as high as 10: 1.
The above description is only a preferred example of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. The Gysel power division filter with the high power division ratio comprises an upper layer microstrip structure, an isolation element, a middle layer dielectric substrate and a lower layer grounding metal plate, wherein the upper layer microstrip structure is attached to the upper surface of the middle layer dielectric plate, and the lower surface of the middle layer dielectric plate is grounding metal; the method is characterized in that: the upper layer microstrip structure comprises two impedance transformers with 90-degree phase shift and four quarter-wavelength branch lines with different characteristic impedances; the distance between the resonators in the two impedance transformers is different; the two impedance transformers share one input port as an input port (I/P) of a Gysel power division filter with a high power division ratio, and output ports of the two impedance transformers serve as a first output port (O/P1) and a second output port (O/P2) of the Gysel power division filter with the high power division ratio; four quarter-wavelength branch lines are connected in sequence between the first output port O/P1 and the second output port O/P2; the isolation element comprises a first isolation resistor (R1) and a second isolation resistor (R2); an isolation resistance (R1) is between the first and second quarter-wavelength branch lines, and a second isolation resistance (R2) is between the third and fourth quarter-wavelength branch lines.
2. The Gysel power division filter with high power division ratio according to claim 1, characterized in that the upper impedance transformer consists of two half-wavelength resonator couplings, a first resonator (1) and a second resonator (2), respectively; the first resonator (1) is a microstrip line with an open circuit at one end, and is formed by connecting a first microstrip line (9), a second microstrip line (10), a third microstrip line (11), a fourth microstrip line (12), a fifth microstrip line (13), a sixth microstrip line (14), a seventh microstrip line (15), an eighth microstrip line (16), a ninth microstrip line (17), a tenth microstrip line (18), an eleventh microstrip line (19), a twelfth microstrip line (20), a thirteenth microstrip line (21) and a fourteenth microstrip line (22); the second resonator (2) is formed by connecting microstrip lines which are centrosymmetric with the first resonator (1); the first microstrip line (9) of the first resonator (1) is connected with the input port (I/P), and the corresponding microstrip line in the microstrip line of the second resonator (2) is connected with the first output port (O/P1); the impedance converter positioned below is formed by coupling two half-wavelength resonators, namely a third resonator (3) and a fourth resonator (4); the third resonator (3) is a microstrip line with an open circuit at one end and formed by a fifteenth microstrip line (23), a sixteenth microstrip line (24), a seventeenth microstrip line (25), an eighteenth microstrip line (26), a nineteenth microstrip line (27), a twentieth microstrip line (28), a twenty-first microstrip line (29), a twenty-second microstrip line (30), a twenty-third microstrip line (31), a twenty-fourth microstrip line (32), a twenty-fifth microstrip line (33), a twenty-sixth microstrip line (34), a twenty-seventh microstrip line (35), a twenty-eighth microstrip line (36) and connection; the fourth resonator (4) is formed by connecting microstrip lines which are centrosymmetric with the third resonator (3); a fifteenth microstrip line (23) of the third resonator (3) is connected with the input port (I/P), and a corresponding microstrip line in the microstrip lines of the fourth resonator (4) is connected with the second output port (O/P2); the four quarter-wavelength branch lines with different characteristic impedances are respectively a first quarter-wavelength branch line (5), a second quarter-wavelength branch line (6), a third quarter-wavelength branch line (7) and a fourth quarter-wavelength branch line (8); the first quarter-wavelength branch line (5) is formed by sequentially connecting a twenty-ninth microstrip line (37), a thirty-third microstrip line (38), a thirty-first microstrip line (39), a thirty-second microstrip line (40), a thirty-third microstrip line (41) and a thirty-fourth microstrip line (42); the second quarter-wavelength branch line (6) is formed by sequentially connecting a thirty-fifth microstrip line (43), a thirty-sixth microstrip line (44), a thirty-seventh microstrip line (45), a thirty-eighth microstrip line (46) and a thirty-ninth microstrip line (47); the third quarter-wavelength branch line (7) is formed by sequentially connecting a forty-first microstrip line (48), a forty-first microstrip line (49), a forty-second microstrip line (50), a forty-third microstrip line (51), a forty-fourth microstrip line (52), a forty-fifth microstrip line (53) and a forty-sixth microstrip line (54); the fourth quarter-wavelength branch line (8) is formed by sequentially connecting a forty-seventh microstrip line (55), a forty-eighth microstrip line (56), a forty-ninth microstrip line (57), a fifty-fifth microstrip line (58) and a fifty-first microstrip line (59); a twenty-ninth microstrip line (37) of the first quarter-wave branch (5) is connected to the first output port (O/P1), and a fifty-first microstrip line (59) of the fourth quarter-wave branch (8) is connected to the second output port (O/P2).
3. The Gysel power division filter with high power division ratio as claimed in claim 1, characterized in that the high power division ratio is obtained by changing the coupling strength of the resonators; wherein the coupling strength between the resonators is changed by changing the spacing between the two half-wavelength resonators, adjusting the spacing between the first resonator (1) and the second resonator (2) and the spacing between the third resonator (3) and the fourth resonator (4) to achieve a high power ratio between the first output port O/P1 and the second output port O/P2 of up to 10: 1; the coupling strength between the first resonator (1) and the second resonator (2) is changed by changing the coupling distance between the eighth microstrip line (16) and the fourteenth microstrip line (22) of the first resonator (1) and the corresponding two sections of microstrip lines of the second resonator (2); the coupling strength between the third resonator (3) and the fourth resonator (4) is changed by changing the coupling distance between the twenty-second microstrip line (30) and the twenty-eighth microstrip line (36) of the third resonator (3) and the corresponding two sections of microstrip lines of the fourth resonator (4); in addition, the coupling distance between the two resonators of the Gysel power division filter with any power division ratio ranges from 0.1mm to 3 mm.
4. A Gysel power division filter with a high power division ratio according to claim 1, characterized in that the length L of the half-wavelength resonator is one half of the wavelength λ corresponding to the resonance frequency f of the impedance transformer; where L is the actual microstrip line length.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700917A (en) * | 2013-12-20 | 2014-04-02 | 华南理工大学 | Gysel power distribution filter with high power distribution ratio |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN107306512A (en) * | 2016-02-18 | 2017-10-31 | 韩国科学技术院 | Mode/polarization antenna device |
| CN110011019A (en) * | 2019-03-27 | 2019-07-12 | 南京信息职业技术学院 | Radar scaling network power divider adopting membrane resistor as isolation resistor |
| CN115207590A (en) * | 2022-05-18 | 2022-10-18 | 西北核技术研究所 | Novel high-power Gysel synthesizer |
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2013
- 2013-12-20 CN CN201320846891.3U patent/CN203644921U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700917A (en) * | 2013-12-20 | 2014-04-02 | 华南理工大学 | Gysel power distribution filter with high power distribution ratio |
| CN103700917B (en) * | 2013-12-20 | 2015-12-02 | 华南理工大学 | There is the Gysel merit filter-divider of high merit proportion by subtraction |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN107306512A (en) * | 2016-02-18 | 2017-10-31 | 韩国科学技术院 | Mode/polarization antenna device |
| CN107306512B (en) * | 2016-02-18 | 2020-08-18 | 韩国科学技术院 | Mode/polarization antenna device |
| CN110011019A (en) * | 2019-03-27 | 2019-07-12 | 南京信息职业技术学院 | Radar scaling network power divider adopting membrane resistor as isolation resistor |
| CN115207590A (en) * | 2022-05-18 | 2022-10-18 | 西北核技术研究所 | Novel high-power Gysel synthesizer |
| CN115207590B (en) * | 2022-05-18 | 2024-05-14 | 西北核技术研究所 | Novel high-power Gysel synthesizer |
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