CN110032046A - Litho machine and its operating method - Google Patents
Litho machine and its operating method Download PDFInfo
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- CN110032046A CN110032046A CN201910347129.2A CN201910347129A CN110032046A CN 110032046 A CN110032046 A CN 110032046A CN 201910347129 A CN201910347129 A CN 201910347129A CN 110032046 A CN110032046 A CN 110032046A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
This disclosure relates to litho machine and its operating method.A kind of litho machine, including the microscope carrier for placing wafer, wherein the microscope carrier includes the multiple supporting elements for being used to support the wafer, and each of the multiple supporting element is configured to be removed from the microscope carrier.
Description
Technical field
This disclosure relates to litho machine and its operating method.
Background technique
In litho machine, the microscope carrier for placing wafer is easy to by particle contaminations such as such as dusts.If in this case
Wafer is placed on microscope carrier, will lead to wafer injustice.When carrying out photoetching treatment to wafer, the pattern formed on wafer will be produced
Raw (defocus) out of focus.
Summary of the invention
According to one aspect of the disclosure, a kind of litho machine is provided, including the microscope carrier for placing wafer, wherein institute
Stating microscope carrier includes the multiple supporting elements for being used to support the wafer, each of the multiple supporting element be configured to from
The microscope carrier is removed.
According in some embodiments of the present disclosure, the multiple supporting element is arranged in predetermined pattern, so that even if multiple
A part of supporting element in supporting element is removed, and remaining supporting element still can support the wafer.
According in some embodiments of the present disclosure, in orbit, the supporting element can for the multiple supporting element setting
It is moved along the track.
According in some embodiments of the present disclosure, the track be constructed such that the supporting element along with the wafer
The vertical direction in surface it is mobile.
According in some embodiments of the present disclosure, the track be constructed such that the supporting element along with the wafer
The parallel direction in surface it is mobile.
According in some embodiments of the present disclosure, litho machine can also include clean room, for accommodating removed branch
Support member.
According in some embodiments of the present disclosure, the clean room includes cleaning equipment, and the cleaning equipment is configured
At the particle adhered on the removing supporting element.
According in some embodiments of the present disclosure, each of the multiple supporting element is equipped with for sensing the support
The particle sensor of particle on part.
According in some embodiments of the present disclosure, the supporting element includes the end with the wafer contacts, and described
Grain sensor is arranged in the end.
According in some embodiments of the present disclosure, the sensor includes weight sensor, potentiometer and galvanometer.
A kind of method operating the litho machine according to the disclosure another aspect of the present disclosure provides, comprising:
The first wafer is placed on the multiple supporting element；Photoetching treatment is carried out to first wafer, to form the first pattern；Detection
There are out of focus in first pattern；Determine that there are the in region out of focus and the multiple supporting element in first pattern
One supporting element is corresponding；Remove first supporting element；The second wafer is placed on remaining supporting element；And to second wafer
Carry out photoetching treatment.
According in some embodiments of the present disclosure, before removing first supporting element further include: the multiple
Third wafer is placed on supporting element；Photoetching treatment is carried out to the third wafer, to form third pattern；Detect the third
There are out of focus in pattern；And determine that there are there are out of focus in region out of focus and first pattern in the third pattern
Region is identical.
According to the another aspect of the disclosure, a kind of method for operating the litho machine according to the disclosure is provided, comprising: logical
It crosses particle sensor and determines in the multiple supporting element and be attached with particle on the second supporting element；Remove the second supporting element；In residue
Supporting element on place the first wafer；Photoetching treatment is carried out to first wafer.
According in some embodiments of the present disclosure, aforesaid operations method can also include: to put on remaining supporting element
After setting the first wafer, is determined in remaining supporting element by particle sensor and be attached with particle on the first supporting element；And it removes
First supporting element.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become more apparent from.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Fig. 1 shows the schematic diagram of litho machine according to an embodiment of the present disclosure；
Fig. 2 shows the schematic diagrames of litho machine according to an embodiment of the present disclosure；
Fig. 3 shows the schematic diagram of litho machine according to an embodiment of the present disclosure；
Fig. 4 shows the schematic diagram of litho machine according to an embodiment of the present disclosure；
Fig. 5 shows the schematic diagram of litho machine according to an embodiment of the present disclosure；
Fig. 6 shows the flow chart for operating the method for litho machine according to an embodiment of the present disclosure；
Fig. 7 shows the schematic diagram of litho machine according to an embodiment of the present disclosure；
Fig. 8 shows the flow chart for operating the method for litho machine according to an embodiment of the present disclosure；
Fig. 9 shows the flow chart for operating the method for litho machine according to an embodiment of the present disclosure；And
Figure 10 shows the flow chart for operating the method for litho machine according to an embodiment of the present disclosure.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In some cases, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, the disclosure is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.That is, structure and method herein is to show in an exemplary fashion, for
The different embodiments of structures and methods in the bright disclosure.It will be understood by those skilled in the art, however, that they be merely illustrative can
Exemplary approach with the disclosure for being used to implement, rather than mode exhausted.In addition, attached drawing is not necessarily drawn to scale, it is some
Feature may be amplified to show the details of specific component.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Figures 1 and 2 show that according to the schematic diagram of the litho machine of one embodiment of the disclosure.
As depicted in figs. 1 and 2, which includes vacuum chamber 1 and the microscope carrier 2 in vacuum chamber 1.Microscope carrier 2 is provided with
It is used to support multiple supporting elements 3 of wafer 5.Supporting element 3 is configured to individually remove each supporting element 3 from microscope carrier 2.
For example, each supporting element 3 can be separately fastened to the base of microscope carrier 2 according in some embodiments of the present disclosure
On seat (not shown).When needing to remove supporting element 3, supporting element 3 can be clamped for example, by clamping device (not shown), and
Supporting element 3 is moved to other positions using clamping device.
According in some embodiments of the present disclosure, each supporting element 3 be can be set in orbit.Track is constructed such that
Each supporting element 3 is obtained to move on the direction for be parallel to crystal column surface.A part of supporting element 3 is moved for example, can use track
Move the edge or other positions of microscope carrier.In addition, track also is configured so that each supporting element 3 perpendicular to wafer table
It is moved on the direction in face.For example, wafer 5 contacts the end 4 of each supporting element 3 when wafer 5 is placed on microscope carrier 2.It can benefit
A part of supporting element 3 is moved down with track, so that the end 4 of the portion supports 3 no longer contacts wafer 5.Then make again
Obtain edge or other positions that the portion supports 3 are moved to microscope carrier along horizontal direction (being parallel to the direction of crystal column surface)
It sets, to carry out subsequent processing (such as the cleaning treatment described below) to the portion supports 3.
Multiple supporting elements 3 can be arranged in predetermined pattern, so that even if a part of supporting element in supporting element 3 is removed,
Remaining supporting element 3 still is able to support wafer 5.For example, Fig. 1 shows a kind of arrangement mode of illustrative supporting element 3.It answers
Work as understanding, supporting element 3 may be arranged in various other patterns, such as annular, rectangle or irregular shape etc..Wafer 5 is put
When setting on microscope carrier 2, the end 4 of supporting element 3 supports wafer 5, so that wafer 5 keeps balancing and is able to carry out photoetching treatment.
When a part of supporting element 3 be removed after, remaining supporting element 3 still be able to support wafer 5, without will lead to wafer 5 lose it is flat
Weighing apparatus is fallen from microscope carrier 2.
Fig. 6 shows the flow chart for operating the method for litho machine according to an embodiment of the present disclosure.Below with reference to Fig. 3 and figure
4 describe the specific steps of this method.
Firstly, placing 5 (step 601) of the first wafer on multiple supporting elements 3.As shown in figure 3, the first wafer 5 is placed
On microscope carrier 2, and the back side of the first wafer 5 is supported the support of end 4 of part 3.The front of first wafer 5 is light to be carried out
The surface at quarter.
Then, photoetching treatment is carried out to the first wafer 5, forms the first pattern (step 602) in the front of the first wafer 5.
It will be appreciated by those skilled in the art that photoetching treatment generally includes gluing, exposure and imaging.It, can by photoetching treatment
To form the first pattern on the surface of the first wafer 5.
Next, can detect to the first pattern, it whether there is (step 603) out of focus in the first pattern to determine.
For example, the surface of the first wafer 5 can be imaged by ultraviolet light, compare and search obtained image (i.e. the first pattern) with
Difference between layout, so that it is determined that whether the first pattern is out of focus.It should be appreciated that layout here can be reality
The pattern of device to be prepared, can also be test pattern, and the disclosure is without limitation.
When the first pattern on the first wafer 5 occurs out of focus, it may be possible to because existing such as dust on microscope carrier 2
Caused by grain 6.Therefore, it is necessary to try every possible means to eliminate the influence of particle 6.
Next it may be determined to which that there are regions 7 out of focus in the first pattern is corresponding with the first supporting element 8 in supporting element 3
(step 604).That is, since the particle 6 adhered on the first supporting element 8 causes the appearance of the first pattern out of focus.
Next, removing 8 (step 605) of the first supporting element.As shown in figure 4, the first supporting element 8 is removed from microscope carrier 2, and
And it is moved in clean room 11.In clean room 11, the first supporting element 8 can be cleaned, such as pass through liquid rinse
Or the modes such as purge of gas, physics erasing, remove the particle 6 being attached on the first supporting element 8.In addition, in order to reduce to light
Quarter machine vacuum chamber 1 in photoetching treatment influence, clean room 11 also keeps vacuum, and can be connected to vacuum chamber 1.In basis
In other embodiments of the disclosure, clean room 11 and vacuum chamber 1 can be the same chamber, and the first supporting element 8 is moved to
A corner in vacuum chamber 1 or the position for being provided with cleaning device, as long as not influencing photoetching treatment in vacuum chamber 1 i.e.
It can.
As shown in figure 4, placing 5 (step 606) of the second wafer on remaining supporting element 3.Due to the arrangement side of supporting element 3
Formula ensure that after removing the first supporting element 8, still is able to support wafer and keeps balance.Therefore, to the first supporting element 8 into
While row cleaning, photoetching treatment can be continued.
Next, carrying out photoetching treatment (step 607) to the second wafer 5.The of particle is attached with due to having removed
One supporting element 8, thus the pattern formed on the second wafer 5 will not cause because of particle it is out of focus.
As described above, litho machine according to an embodiment of the present disclosure, can carry out at photoetching while cleaning supporting element
Reason, to improve the production capacity of litho machine, reduces production cost.
The method for operating litho machine according to an embodiment of the present disclosure is described in detail above in conjunction with attached drawing.Art technology
Personnel should be appreciated that under the introduction and enlightenment of the disclosure, can also increase various processing steps based on the above method.
For example, the out of focus of photoengraving pattern may be caused by many reasons.It, can only according to the pattern that single photoetching treatment is formed
It determines exist in a particular area out of focus, but not can determine that this is out of focus whether since the particle adhered on supporting element 3 is led sometimes
It causes.Therefore, the step 601-603 in Fig. 6 can be repeated several times.If determined in multiple photoetching treatment always same
Region appearance is out of focus, then can determine substantially and be attached with particle on the corresponding supporting element 3 in the region.It may then continue with and execute step
Rapid 605-607.For example, Figure 10 shows operation according to the flow chart of the method for the litho machine of some embodiments of the present disclosure.It should
Step 901-904 is increased on the basis of flow chart flow chart shown in Fig. 6.
In step 901, third wafer is placed on multiple supporting elements 3；Then photoetching treatment is carried out to third wafer, the
Third pattern (step 902) is formed on three wafers；Next, determining whether the third pattern is deposited according to mode similar to the above
In (step 903) out of focus；When, there are in the case where out of focus, further determining that there are areas out of focus in third pattern in third pattern
There are the whether identical (steps 904) in region out of focus in domain and the first pattern.If two regions are identical, it can determine and be somebody's turn to do
Particle is attached on corresponding first supporting element in region.The first supporting element can be removed, places second on remaining supporting element
Wafer, and photoetching treatment is carried out to the second wafer.Since subsequent processing is similar with the step in flow chart shown in fig. 6, here
Just it is not repeated.
In addition, according to the above-mentioned introduction of the disclosure, it should be understood that be attached with particle on which supporting element to determine, also
Photoetching treatment can be carried out to more wafers, and according to the pattern formed on wafer, determine and lose before removing supporting element
Burnt region.If these regions out of focus are all the same areas, branch corresponding in the region can be determined more for certain
Particle is attached in support member.For example, being based on flow chart shown in Fig. 10 according in some embodiments of the present disclosure, removing
Before above-mentioned first supporting element, also the 4th wafer of placement carries out photoetching treatment, then carries out to the pattern formed on the 4th wafer
Detection determines that there are regions out of focus.By there are regions out of focus to compare on the first wafer, third wafer and the 4th wafer
Compared with for example, these regions correspond to the same supporting element, then can determining the support if these three regions are the same regions
Particle is attached on part.
Fig. 5 shows the schematic diagram of the litho machine according to some embodiments of the present disclosure.As shown in figure 5, the litho machine is also
It may include vacuum system 10, for generating vacuum in vacuum chamber 1.Vacuum system 10 can be for example, by gas-guide tube 9 and true
Empty room 1 is in fluid communication.Gas-guide tube 9 is arranged on microscope carrier 2 in the example shown in FIG. 5, and the end of gas-guide tube 9 is lower than branch
Support member 3, has an impact to avoid to wafer.
Fig. 7 shows the schematic diagram of the litho machine according to some embodiments of the present disclosure.As shown in fig. 7, the litho machine
Microscope carrier 2 is similar to Fig. 1-litho machine structure shown in fig. 5, and difference is to be both provided with particle sensor 12 in each supporting element 3.
Particle sensor 12 can sense whether be attached with particle 6 on the respectively supporting element 3 at place.For example, according to the disclosure
In one embodiment, particle sensor 12 may include weight sensor, which can measure such as supporting element 3
The weight of end 4.When end 4 is attached with particle, the measured value of particle sensor 12 changes.In this way, being passed according to particle
The variation of the measured value of sensor 12, which can determine, is attached with particle on the end 4 of the supporting element 3.
According to another embodiment of the present disclosure, particle sensor 12 may include such as galvanometer.Supporting element 3
End 4 can be made of conductive materials such as such as metals (gold, silver, aluminium or alloy).It is scheduled by applying to end 4
Voltage can flow through the electric current of end 4 by amperometric measurement.When particle is attached on end 4, the measured value meeting of galvanometer
It changes, so that it is determined that being attached with particle on the end 4.
In another embodiment according to the disclosure, particle sensor 12 may include such as potentiometer.Supporting element 3
End 4 can be made of conductive materials such as such as metals.By applying scheduled electric current to end 4, can be measured by voltage
Measure the voltage of end 4.When particle is attached on end 4, the measured value of potentiometer can change, so that it is determined that the end 4
On be attached with particle.
It should be appreciated that only illustrating some examples of particle sensor 12 above.Under the introduction and enlightenment of the disclosure,
Other types of particle sensor 12 can also be used, the disclosure is without limitation.
Fig. 8 shows the flow chart for operating the method for litho machine shown in Fig. 7.As shown in figure 8, carrying out photoetching to wafer
Before processing, first pass through whether be attached with particle (step on each supporting element in the determining supporting element 3 of particle sensor 12
701).In the case where particle sensor 12 detects and is attached with particle 6 on the second supporting element, the second supporting element (step is removed
702).In this way, the first wafer can be placed on remaining supporting element 3 in the case where not having particle attachment on ensuring microscope carrier 2
(step 703) simultaneously carries out photoetching treatment (704) to the first wafer.
Using litho machine shown in Fig. 7, the branch for being attached with particle can be detected and removed before carrying out photoetching treatment
Support member, the presence without determining particle by the pattern formed on wafer avoid wave so as to reduce the use of wafer
Take wafer, reduces production cost.In addition, since sensor can be detected quickly, it is not necessary to pass through time-consuming photoetching and pattern
Detection also improves production efficiency to determine the position of particle, increases yield.
Fig. 9 shows the flow chart for operating the method for litho machine shown in Fig. 7.Compared with the flow chart of Fig. 8, the stream of Fig. 9
Journey figure increases step 805-806, and other steps are similar to Fig. 8.As shown in figure 9, it is brilliant to place first on remaining supporting element
After circle (step 703), determine whether be attached with particle (step 805) on remaining supporting element 3 again by particle sensor 12.
When the end for determining the first supporting element is attached with particle, the first supporting element (step 806) can be removed.It is then possible to
One wafer carries out photoetching treatment (step 704).
The source for the particle being attached on the end 4 of supporting element 3 is various.Some particles are descended slowly and lightly in vacuum chamber 1,
This particle can be removed for example, by the step 701-702 of Fig. 8.But backside of wafer itself may also have particle, when wafer
When being placed on remaining supporting element, the particle of backside of wafer may be transferred on the end 4 of supporting element 3, thus to subsequent shape
At pattern have an impact, cause out of focus.Therefore, in flow chart shown in Fig. 9, the process based on Fig. 8 increases step
805-806.That is, sensing on supporting element 3 whether be attached with particle again after wafer is placed on supporting element 3.If deposited
In particle, then corresponding supporting element is removed.This way it is possible to avoid influence of the particle of backside of wafer to photoetching treatment, improves and produces
Quality.
In addition, can also include following technical scheme according to some embodiments of the present disclosure:
1, a kind of litho machine, which is characterized in that including the microscope carrier for placing wafer,
Wherein, the microscope carrier includes the multiple supporting elements for being used to support the wafer, each in the multiple supporting element
It is a to be configured to be removed from the microscope carrier.
2, the litho machine according to 1, which is characterized in that the multiple supporting element is arranged in predetermined pattern, so that even if
A part of supporting element in multiple supporting elements is removed, and remaining supporting element still can support the wafer.
3, the litho machine according to 1 or 2, which is characterized in that the multiple supporting element setting is in orbit, the support
Part can be moved along the track.
4, the litho machine according to 3, which is characterized in that the track be constructed such that the supporting element along with it is described
The vertical direction in the surface of wafer is mobile.
5, the litho machine according to 3, which is characterized in that the track be constructed such that the supporting element along with it is described
The parallel direction in the surface of wafer is mobile.
6, the litho machine according to 1, which is characterized in that further include clean room, for accommodating removed supporting element.
7, the litho machine according to 6, which is characterized in that the clean room includes cleaning equipment, the cleaning equipment quilt
The particle adhered on supporting element described in configured to clear.
8, the litho machine according to 1, which is characterized in that each of the multiple supporting element is equipped with for sensing this
The particle sensor of particle on supporting element.
9, the litho machine according to 1, which is characterized in that the supporting element includes the end with the wafer contacts, institute
Particle sensor is stated to be arranged in the end.
10, the litho machine according to 8, which is characterized in that the sensor includes weight sensor, potentiometer and electric current
Meter.
11, a kind of method operated according to 1 litho machine characterized by comprising
The first wafer is placed on the multiple supporting element；
Photoetching treatment is carried out to first wafer, to form the first pattern；
Detect in first pattern that there are out of focus；
It is corresponding with the first supporting element in the multiple supporting element to determine in first pattern that there are regions out of focus；
Remove first supporting element；
The second wafer is placed on remaining supporting element；
Photoetching treatment is carried out to second wafer.
12, the method according to 11, which is characterized in that before removing first supporting element further include:
Third wafer is placed on the multiple supporting element；
Photoetching treatment is carried out to the third wafer, to form third pattern；
Detect in the third pattern that there are out of focus；And
Determine in the third pattern there are region out of focus with there are region out of focus is identical in first pattern.
13, a kind of method operated according to 8 litho machines characterized by comprising
It is determined in the multiple supporting element by particle sensor and is attached with particle on the second supporting element；
Remove the second supporting element；
The first wafer is placed on remaining supporting element；
Photoetching treatment is carried out to first wafer.
14, the method according to 13, further includes:
After placing the first wafer on remaining supporting element, first is determined in remaining supporting element by particle sensor
Particle is attached in support member；And
Remove the first supporting element.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description show or other other different orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
In addition, the description of front may be referred to and be " connected " or " coupling " element together or node or feature.Such as
It is used herein, unless explicitly stated otherwise, " connection " mean an element/node/feature and another element/node/
Feature is being directly connected (or direct communication) electrically, mechanically, in logic or in other ways.Similarly, unless separately
It clearly states outside, " coupling " means that an element/node/feature can be with another element/node/feature with direct or indirect
Mode link mechanically, electrically, in logic or in other ways to allow to interact, even if the two features may
It is not directly connected to be also such.That is, " coupling " is intended to encompass the direct connection and indirectly of element or other feature
Connection, including the use of the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can with the similar terms such as " first " used herein, " second ", and
And it thus is not intended to limit.For example, unless clearly indicated by the context, be otherwise related to structure or element word " first ", "
Two " do not imply order or sequence with other such digital words.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of litho machine, which is characterized in that including the microscope carrier for placing wafer,
Wherein, the microscope carrier includes the multiple supporting elements for being used to support the wafer, each of the multiple supporting element quilt
It is constructed to be permeable to be removed from the microscope carrier.
2. litho machine according to claim 1, which is characterized in that the multiple supporting element is arranged in predetermined pattern, so that
Even if a part of supporting element in multiple supporting elements is removed, remaining supporting element still can support the wafer.
3. litho machine according to claim 1 or 2, which is characterized in that the multiple supporting element setting is in orbit, described
Supporting element can be moved along the track.
4. litho machine according to claim 3, which is characterized in that the track be constructed such that the supporting element along with
The vertical direction in the surface of the wafer is mobile.
5. litho machine according to claim 3, which is characterized in that the track be constructed such that the supporting element along with
The parallel direction in the surface of the wafer is mobile.
6. litho machine according to claim 1, which is characterized in that further include clean room, for accommodating removed support
Part.
7. litho machine according to claim 6, which is characterized in that the clean room includes cleaning equipment, and the cleaning is set
It is standby to be configured to remove the particle adhered on the supporting element.
8. litho machine according to claim 1, which is characterized in that each of the multiple supporting element is equipped with for feeling
Survey the particle sensor of the particle on the supporting element.
9. a kind of method for operating litho machine according to claim 1 characterized by comprising
The first wafer is placed on the multiple supporting element；
Photoetching treatment is carried out to first wafer, to form the first pattern；
Detect in first pattern that there are out of focus；
It is corresponding with the first supporting element in the multiple supporting element to determine in first pattern that there are regions out of focus；
Remove first supporting element；
The second wafer is placed on remaining supporting element；
Photoetching treatment is carried out to second wafer.
10. a kind of method for operating litho machine according to claim 8 characterized by comprising
It is determined in the multiple supporting element by particle sensor and is attached with particle on the second supporting element；
Remove the second supporting element；
The first wafer is placed on remaining supporting element；
Photoetching treatment is carried out to first wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910347129.2A CN110032046A (en) | 2019-04-28 | 2019-04-28 | Litho machine and its operating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910347129.2A CN110032046A (en) | 2019-04-28 | 2019-04-28 | Litho machine and its operating method |
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| Publication Number | Publication Date |
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| CN110032046A true CN110032046A (en) | 2019-07-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910347129.2A Pending CN110032046A (en) | 2019-04-28 | 2019-04-28 | Litho machine and its operating method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940027611U (en) * | 1993-05-10 | 1994-12-10 | Wafer Chuck of Semiconductor Exposure Equipment | |
| CN101738869A (en) * | 2008-11-20 | 2010-06-16 | 上海华虹Nec电子有限公司 | Silicon wafer bearing table for photoetching machine and use method thereof |
| CN105824199A (en) * | 2011-02-18 | 2016-08-03 | Asml荷兰有限公司 | Method for manufacturing substrate holder |
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2019
- 2019-04-28 CN CN201910347129.2A patent/CN110032046A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940027611U (en) * | 1993-05-10 | 1994-12-10 | Wafer Chuck of Semiconductor Exposure Equipment | |
| CN101738869A (en) * | 2008-11-20 | 2010-06-16 | 上海华虹Nec电子有限公司 | Silicon wafer bearing table for photoetching machine and use method thereof |
| CN105824199A (en) * | 2011-02-18 | 2016-08-03 | Asml荷兰有限公司 | Method for manufacturing substrate holder |
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