CN110022074A - A kind of high-efficiency high-power electrical isolation transformer topology - Google Patents
A kind of high-efficiency high-power electrical isolation transformer topology Download PDFInfo
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- CN110022074A CN110022074A CN201910340504.0A CN201910340504A CN110022074A CN 110022074 A CN110022074 A CN 110022074A CN 201910340504 A CN201910340504 A CN 201910340504A CN 110022074 A CN110022074 A CN 110022074A
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- igbt transistor
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- 238000002955 isolation Methods 0.000 title claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims abstract description 30
- 230000005611 electricity Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
- H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
- H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
- H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
Abstract
A kind of high-efficiency high-power electrical isolation transformer topology, including igbt transistor N1, igbt transistor N2, igbt transistor N3, igbt transistor N4, coil T1, coil T2, coil T3, coil T4, diode D1, diode D2, capacitor C4, the collector of igbt transistor N1 is connect with the T1- of coil T1, the T1+ of coil T1 is connect with the collector of igbt transistor N2, the emitter of igbt transistor N2 is connect with the collector of igbt transistor N4, the emitter of igbt transistor N4 is connect with the T2- of coil T2, the T2+ of coil T2 is connect with the emitter of igbt transistor N3, the collector of igbt transistor N3 is connect with the emitter of igbt transistor N1, The T3+ of coil T3 is connect with the anode of diode D1, the T4- of coil T4 is connect with the anode of diode D2, the T3- of coil T3 is connect with the T4+ of coil T4, and the cathode of diode D1 is connect with the cathode of diode D2, and the cathode of diode D1 is connect with the T3- of coil T3 by capacitor C4.Present invention loss is lower, and power savings are obvious.
Description
Technical field
The present invention relates to transformer technology field, in particular to a kind of high-efficiency high-power electrical isolation transformer topology.
Background technique
Electronic transformer is a kind of by the high-frequency electrical energy of Technics of Power Electronic Conversion technology and opportunity electromagnetic induction principle transformation skill
Art is combined, and is realized the static electric power equipment for the electric energy that a kind of transformation of electrical energy of electrical nature is another electrical nature,
It is converted into being isolated through high frequency transformer again after high frequency waves by electronic circuit, alternating current can be converted into different voltage for
Load uses.Electronic transformer has the characteristics that small in volume compared with Industrial Frequency Transformer, can reduce cost, reduces
The metal materials such as copper and iron are saved in fever.
As shown in Figure 1, traditional great-power electronic transformer topology is usually: after alternating current (LIN and NIN) access, first
By by four diodes, (alternating current is transformed into the Voltage pulsating direct-current supply of single polarity by the full-wave rectification bridge that D5 is formed to D8).
Via four IGBT, (full-bridge circuit that N1 to N4) is formed, is transformed into the square wave power of high frequency to Voltage pulsating direct-current supply, then passes through
After crossing isolation and the voltage transformation of transformer, after diode D1 and D2 rectification, the power supply HV for being suitable for load is generated
+.Some load (such as the halogen lamp and quartz lamp etc) for not needing DC power supply, can directly connect load in T3+ and T3-
Between.
From Fig. 1 analysis it is found that any moment, alternating current is all that first pass through two diodes (D5 and D8 or D6 and D7) whole
Stream, then using two IGBT (N1 and N4 or N2 and N3) formed high frequency waves, later again after transformer converts, finally by
Diode D1 or D2, which are rectified out, loads power supply HV+ used.
Since alternating current is during rectifier transformer, diode and IGBT all have pressure drop, therefore will appear loss.Traditional is big
It needs successively to pass through two diodes and two IGBT during power electronic transformer rectifier transformer, higher, economize on electricity is lost
Effect remains to be further improved.
Summary of the invention
It is an object of the present invention to solving above-mentioned the deficiencies in the prior art, provide a kind of loss lower, power savings
Apparent high-efficiency high-power electrical isolation transformer topology.
To reach this purpose, The technical solution adopted by the invention is as follows:
A kind of high-efficiency high-power electrical isolation transformer topology, including igbt transistor N1, igbt transistor N2, IGBT crystalline substance
Body pipe N3, igbt transistor N4, coil T1, coil T2, coil T3, coil T4, diode D1, diode D2, capacitor C4, it is described
The collector of igbt transistor N1 is electrically connected with the non-same polarity T1- of the coil T1, the Same Name of Ends T1+ of the coil T1 and institute
State the collector electrical connection of igbt transistor N2, the current collection of the emitter of the igbt transistor N2 and the igbt transistor N4
Pole electrical connection, the emitter of the igbt transistor N4 are electrically connected with the non-same polarity T2- of the coil T2, the coil T2's
Same Name of Ends T2+ is electrically connected with the emitter of the igbt transistor N3, the collector and the IGBT of the igbt transistor N3
The emitter of transistor N1 is electrically connected, and the Same Name of Ends T3+ of the coil T3 is electrically connected with the anode of the diode D1, the line
The non-same polarity T4- of circle T4 is electrically connected with the anode of the diode D2, the non-same polarity T3- and the coil of the coil T3
The Same Name of Ends T4+ of T4 is electrically connected, and the cathode of the diode D1 is electrically connected with the cathode of the diode D2, the diode D1
Cathode be electrically connected with the non-same polarity T3- of the coil T3 by the capacitor C4.
Preferably, it is electrically connected between the emitter of the igbt transistor N1 and the emitter of the igbt transistor N2
Capacitor C1.
Preferably, it is electrically connected between the collector of the igbt transistor N2 and the emitter of the igbt transistor N3
Capacitor C2, is electrically connected with capacitor C3 between the collector of the igbt transistor N1 and the emitter of the igbt transistor N4.
Preferably, the type of the igbt transistor N1, igbt transistor N2, igbt transistor N3 and igbt transistor N4
Number be FGL60N/100.
Preferably, the model RHRP30120 of the diode D1 and diode D2.
Preferably, the capacitance of the capacitor C1 is 0.22 μ F/250V.
Preferably, the capacitance of the capacitor C2 and capacitor C3 is 0.1 μ F/250V.
Preferably, the coil T1, coil T2, coil T3 and coil T4 are wound on the same magnetic core, the type of magnetic core
Number be EE65.
Beneficial effects of the present invention:
For traditional great-power electronic transformer, at any time, the electric current in circuit of the present invention all flows less
Through a diode and an igbt transistor, therefore, the present invention is for traditional great-power electronic transformer, damage
Consumption is lower, and power savings become apparent.
Detailed description of the invention
Fig. 1 is traditional great-power electronic transformer topology circuit diagram;
Fig. 2 is circuit diagram of the invention;
Fig. 3 is working waveform figure of the invention;
Fig. 4 is the partial enlarged view in Fig. 3 at A.
Specific embodiment
Illustrate with reference to the accompanying drawing and passes through specific embodiment to further illustrate the technical scheme of the present invention.
A kind of high-efficiency high-power electrical isolation transformer topology, including igbt transistor N1, igbt transistor N2, IGBT crystalline substance
Body pipe N3, igbt transistor N4, coil T1, coil T2, coil T3, coil T4, diode D1, diode D2, capacitor C4, it is described
The collector of igbt transistor N1 is electrically connected with the non-same polarity T1- of the coil T1, the Same Name of Ends T1+ of the coil T1 and institute
State the collector electrical connection of igbt transistor N2, the current collection of the emitter of the igbt transistor N2 and the igbt transistor N4
Pole electrical connection, the emitter of the igbt transistor N4 are electrically connected with the non-same polarity T2- of the coil T2, the coil T2's
Same Name of Ends T2+ is electrically connected with the emitter of the igbt transistor N3, the collector and the IGBT of the igbt transistor N3
The emitter of transistor N1 is electrically connected, and the Same Name of Ends T3+ of the coil T3 is electrically connected with the anode of the diode D1, the line
The non-same polarity T4- of circle T4 is electrically connected with the anode of the diode D2, the non-same polarity T3- and the coil of the coil T3
The Same Name of Ends T4+ of T4 is electrically connected, and the cathode of the diode D1 is electrically connected with the cathode of the diode D2, the diode D1
Cathode be electrically connected with the non-same polarity T3- of the coil T3 by the capacitor C4.
Igbt transistor drives in such a way that the driving of every slab bridge is complementary with another half-bridge, i.e., as the igbt transistor N1 and
When the igbt transistor N3 drives conducting simultaneously, turn off the igbt transistor N2 and igbt transistor N4, or
Person keeps igbt transistor N1 and IGBT brilliant when the igbt transistor N2 and the igbt transistor N4 drive conducting simultaneously
Body pipe N3 shutdown.
As illustrated in fig. 2, it is assumed that alternating current firewire LIN be+and connect emitter in the igbt transistor N1, alternating current zero curve
NIN is-and connect emitter in the igbt transistor N2, when the igbt transistor N2 and igbt transistor N4 simultaneously
When driving conducting, the igbt transistor N1 and the igbt transistor N3 drive shutdown simultaneously, current path first passes through institute
The body diode for stating igbt transistor N1 reaches the non-same polarity T1- of the coil T1, then reaches the same of the coil T1 again
Name end T1+ finally reaches alternating current zero curve NIN forming circuit by the igbt transistor N2.Although the igbt transistor N4
It is also on state, but because the body diode of the igbt transistor N3 is off off state, the igbt transistor
Simultaneously no current passes through N4.False this process as will be described is defined as high frequency waves positive half cycle state, then when the igbt transistor
N2 and the igbt transistor N4 drive shutdown simultaneously, and the igbt transistor N1 will drive simultaneously with the igbt transistor N3
It is then high frequency waves negative half period state when conducting.
When circuit is in high frequency waves negative half period state, current path first passes through the igbt transistor N3 and reaches the line
Enclose T2 Same Name of Ends T2+, then reach the non-same polarity T2- of the coil T2 again, finally by the igbt transistor N2 with
The body diode of the igbt transistor N4 reaches NIN forming circuit.
As shown in Figure 3 and 4, above process circulation is gone down, and alternating current can be transformed into high frequency waves.Due to the coil
T1, coil T2, coil T3 and coil T4 are wound on same iron core, can be by high frequency waves positive half cycle and height because mutual inductance acts on
Frequency wave negative half period synthesizes a complete high frequency wave period, and the Same Name of Ends T3+'s of the coil T3 and coil T4
Output has the high frequency waves of mains waveform envelope between non-same polarity T4-, then through the diode D1 and the diode D2
Become Rectified alternating current after rectification.
Similarly, when alternating current reverse phase, i.e. alternating current firewire LIN is-, alternating current zero curve NIN is+when, through the invention shown in circuit
Still alternating current can be converted into high frequency waves.
By above-mentioned analysis it is recognised that any moment, current path all first passes through the igbt transistor N1 and described
The igbt transistor N2 or igbt transistor N3 and igbt transistor N4, then forms high frequency waves.Wherein every two
One in igbt transistor acts only as diode, for example, when alternating current firewire LIN is+, alternating current zero curve NIN is-, circuit is in high frequency
When wave positive half cycle state, the igbt transistor N1 serves as diode, and when circuit is in high frequency waves negative half period state, it is described
Igbt transistor N4 serves as diode.High frequency waves are after transformer converts, then by the diode D1 or diode D2
It rectifies out and loads power supply HV+ used.
If alternating current 220V, input current 30A, the pressure drop of igbt transistor is 3V, and the pressure drop of diode is 2V, then
One igbt transistor is then 150W plus the quiescent dissipation of a diode.Consider further that igbt transistor as HF switch
Loss, the quiescent dissipation of an igbt transistor and a diode will be greater than 150W.Become relative to traditional great-power electronic
For depressor, at any time, the electric current in circuit of the present invention all flows through a diode and an igbt transistor less, because
This, the present invention is for traditional great-power electronic transformer, and loss is lower, and power savings become apparent.
Preferably, it is electrically connected between the emitter of the igbt transistor N1 and the emitter of the igbt transistor N2
Capacitor C1.
The capacitor C1 is high-frequency filter capacitor, can play the role of a High frequency filter, can be improved circuit
Anti-interference ability.
Preferably, it is electrically connected between the collector of the igbt transistor N2 and the emitter of the igbt transistor N3
Capacitor C2, is electrically connected with capacitor C3 between the collector of the igbt transistor N1 and the emitter of the igbt transistor N4.
The capacitor C2 and capacitor C3 is nondestructive clamping capacitor, can inhibit the leakage inductance spike of transformer.
Preferably, the type of the igbt transistor N1, igbt transistor N2, igbt transistor N3 and igbt transistor N4
It number is the model RHRP30120 of FGL60N/100, the diode D1 and diode D2, the capacitance of the capacitor C1 is
The capacitance of 0.22 μ F/250V, the capacitor C2 and capacitor C3 is 0.1 μ F/250V, the coil T1, coil T2, coil T3
And coil T4 is wound on the same magnetic core, the model EE65 of magnetic core.
The technical principle of the invention is described above in combination with a specific embodiment.These descriptions are intended merely to explain of the invention
Principle, and shall not be construed in any way as a limitation of the scope of protection of the invention.Based on the explanation herein, the technology of this field
Personnel can associate with other specific embodiments of the invention without creative labor, these modes are fallen within
Within protection scope of the present invention.
Claims (8)
1. a kind of high-efficiency high-power electrical isolation transformer topology, it is characterised in that: including igbt transistor N1, igbt transistor
N2, igbt transistor N3, igbt transistor N4, coil T1, coil T2, coil T3, coil T4, diode D1, diode D2, electricity
Hold C4, the collector of the igbt transistor N1 is electrically connected with the non-same polarity T1- of the coil T1, and the coil T1's is of the same name
End T1+ is electrically connected with the collector of the igbt transistor N2, the emitter of the igbt transistor N2 and the IGBT crystal
The collector of pipe N4 is electrically connected, and the emitter of the igbt transistor N4 is electrically connected with the non-same polarity T2- of the coil T2, institute
The Same Name of Ends T2+ for stating coil T2 is electrically connected with the emitter of the igbt transistor N3, the collector of the igbt transistor N3
It is electrically connected with the emitter of the igbt transistor N1, the anode electricity of the Same Name of Ends T3+ of the coil T3 and the diode D1
Connection, the non-same polarity T4- of the coil T4 are electrically connected with the anode of the diode D2, the non-same polarity of the coil T3
T3- is electrically connected with the Same Name of Ends T4+ of the coil T4, and the cathode of the diode D1 and the cathode of the diode D2 are electrically connected
It connects, the cathode of the diode D1 is electrically connected with the non-same polarity T3- of the coil T3 by the capacitor C4.
2. a kind of high-efficiency high-power electrical isolation transformer topology according to claim 2, it is characterised in that: the IGBT
Capacitor C1 is electrically connected between the emitter of transistor N1 and the emitter of the igbt transistor N2.
3. a kind of high-efficiency high-power electrical isolation transformer topology according to claim 3, it is characterised in that: the IGBT
Capacitor C2, the igbt transistor N1 are electrically connected between the collector of transistor N2 and the emitter of the igbt transistor N3
Collector and the igbt transistor N4 emitter between be electrically connected with capacitor C3.
4. a kind of high-efficiency high-power electrical isolation transformer topology according to claim 3, it is characterised in that: the IGBT
The model FGL60N/100 of transistor N1, igbt transistor N2, igbt transistor N3 and igbt transistor N4.
5. a kind of high-efficiency high-power electrical isolation transformer topology according to claim 4, it is characterised in that: two pole
The model RHRP30120 of pipe D1 and diode D2.
6. a kind of high-efficiency high-power electrical isolation transformer topology according to claim 5, it is characterised in that: the capacitor
The capacitance of C1 is 0.22 μ F/250V.
7. a kind of high-efficiency high-power electrical isolation transformer topology according to claim 6, it is characterised in that: the capacitor
The capacitance of C2 and capacitor C3 are 0.1 μ F/250V.
8. a kind of high-efficiency high-power electrical isolation transformer topology according to claim 7, it is characterised in that: the coil
T1, coil T2, coil T3 and coil T4 are wound on the same magnetic core, the model EE65 of magnetic core.
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4598349A (en) * | 1983-09-17 | 1986-07-01 | U.S. Philips Corporation | Electronic transformer composed of flyback converters |
CN1874133A (en) * | 2006-06-27 | 2006-12-06 | 肖俊承 | Full wave bridge type circuit of synchronous rectification |
CN201577037U (en) * | 2009-09-04 | 2010-09-08 | 扬州双鸿电子有限公司 | Major loop of high-power switch power supply |
CN102163932A (en) * | 2011-03-18 | 2011-08-24 | 上海交通大学 | Linear alternating current-direct current (AC-DC) converter for alternating chopped wave |
CN102170235A (en) * | 2011-04-18 | 2011-08-31 | 电子科技大学 | Electronic AC (alternating current) voltage stabilizer |
CN201994854U (en) * | 2011-04-03 | 2011-09-28 | 阮小青 | Four-bridge oscillation electronic transformer of solar power supply |
US20180152109A1 (en) * | 2016-11-29 | 2018-05-31 | Texas Instruments Incorporated | Isolated High Frequency DC/DC Switching Regulator |
CN209731082U (en) * | 2019-04-25 | 2019-12-03 | 佛山市格林博尔电子有限公司 | A kind of high-efficiency high-power electrical isolation transformer topology |
-
2019
- 2019-04-25 CN CN201910340504.0A patent/CN110022074B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4598349A (en) * | 1983-09-17 | 1986-07-01 | U.S. Philips Corporation | Electronic transformer composed of flyback converters |
CN1874133A (en) * | 2006-06-27 | 2006-12-06 | 肖俊承 | Full wave bridge type circuit of synchronous rectification |
CN201577037U (en) * | 2009-09-04 | 2010-09-08 | 扬州双鸿电子有限公司 | Major loop of high-power switch power supply |
CN102163932A (en) * | 2011-03-18 | 2011-08-24 | 上海交通大学 | Linear alternating current-direct current (AC-DC) converter for alternating chopped wave |
CN201994854U (en) * | 2011-04-03 | 2011-09-28 | 阮小青 | Four-bridge oscillation electronic transformer of solar power supply |
CN102170235A (en) * | 2011-04-18 | 2011-08-31 | 电子科技大学 | Electronic AC (alternating current) voltage stabilizer |
US20180152109A1 (en) * | 2016-11-29 | 2018-05-31 | Texas Instruments Incorporated | Isolated High Frequency DC/DC Switching Regulator |
CN209731082U (en) * | 2019-04-25 | 2019-12-03 | 佛山市格林博尔电子有限公司 | A kind of high-efficiency high-power electrical isolation transformer topology |
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