CN110021254B - Method for driving double-grid photoelectric thin film transistor array by adopting single driving chip - Google Patents
Method for driving double-grid photoelectric thin film transistor array by adopting single driving chip Download PDFInfo
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- CN110021254B CN110021254B CN201810014955.0A CN201810014955A CN110021254B CN 110021254 B CN110021254 B CN 110021254B CN 201810014955 A CN201810014955 A CN 201810014955A CN 110021254 B CN110021254 B CN 110021254B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
Abstract
The invention discloses a method for driving a double-gate photoelectric thin film transistor array by adopting a single driving chip, which mainly utilizes two times of scanning to complete the primary driving of the double-gate photoelectric thin film transistor array; the first scanning acts on the top gate, and aims to empty charges in all the double-gate photoelectric thin film transistors so that the top gate can collect photoelectrons; the second scanning acts on the bottom grid, and aims to stably send the photoelectric signals collected from the double-grid photoelectric thin film transistor array to a computer for digital image processing at the next stage; compared with the prior art, the driving system has the advantages of simple structure, good time sequence matching, high data accuracy, small occupied space, low cost, low power consumption and the like.
Description
Technical Field
The invention relates to the field of thin film transistor array driving, in particular to a method for driving a double-gate photoelectric thin film transistor array by adopting a single driving chip.
Background
The double-grid photoelectric thin film transistor is one of novel photoelectric sensors and has the characteristics of high sensitivity, low noise and high resolution. In order to realize the application in the sensing imaging, the sensing imaging is required to be made into an array and is subjected to scanning driving operation.
At present, no pixel array driving chip specially aiming at the double-gate photoelectric thin film transistor exists, and the invention utilizes a general display driving chip to drive the double-gate photoelectric thin film transistor. In the conventional design, two display driving chips are generally used to drive the dual-gate photoelectric thin film transistor, and the whole driving system is complex, and accordingly, the problems of high time sequence matching difficulty, low read data accuracy, large system occupation space, high manufacturing cost, high power consumption and the like exist.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide a method for driving a dual-gate tft array using a single driving chip, and the driving system of the present invention has the advantages of simple structure, good timing matching, high data accuracy, small occupied space, low cost, low power consumption, etc.
In order to make up for the defects of the prior art, the invention adopts the technical scheme that:
the method for driving the double-grid photoelectric thin film transistor array by adopting the single driving chip comprises the following steps:
A. correspondingly connecting a bottom gate and a top gate of each double-gate photoelectric thin film transistor in the double-gate photoelectric thin film transistor array with different output channels of a driving chip respectively;
B. sequentially inputting a clock signal and a pulse signal to the double-gate photoelectric thin film transistor array, setting the top gate to be negative voltage and the bottom gate to be negative voltage and keeping the state when the double-gate photoelectric thin film transistor array receives the clock signal, and turning off all the double-gate photoelectric thin film transistors;
C. when the double-grid photoelectric thin film transistor array receives a pulse signal, the top grid electrode is scanned line by line, and the double-grid photoelectric thin film transistor is reset line by line.
D. After scanning the top gates of all the rows, scanning the bottom gates line by line, opening the double-gate photoelectric thin film transistors line by line, and outputting a signal selected by scanning in each row by an external device connected with the source electrodes of the double-gate photoelectric thin film transistors;
E. after scanning the bottom grid of the last row in the double-grid photoelectric thin film transistor array, an external reading circuit collects the scanned and selected signals in all the rows and uploads the signals to a computer for digital image processing;
F. and performing empty scanning on an output channel which is not connected with the top grid or the bottom grid on the driving chip, and finishing the acquisition of signals when the empty scanning is finished.
Further, in step D, outputting the signal selected by scanning in each row by an external device connected to the source of the dual-gate photo tft, including: the top grid electrode is set to be negative voltage, the bottom grid electrode and the drain electrode are set to be positive voltage, so that the bottom TFT is rapidly turned on, and signal current selected by scanning sequentially flows out of the source electrode and then flows into the amplifier and an external signal conditioning circuit.
Further, in step C, the dual-gate tft is reset row by row, including: setting the bottom grid electrode of each row of the double-grid photoelectric thin film transistors to be negative voltage, so that the bottom TFT is closed, and simultaneously setting the drain electrode to be negative voltage; the top gate is set to a positive voltage to reset the top gate.
The invention has the beneficial effects that: the invention provides a method for driving a double-gate photoelectric thin film transistor array by adopting a single driving chip, which mainly utilizes two times of scanning to complete the primary driving of the double-gate photoelectric thin film transistor array; the first scanning acts on the top gate, and aims to empty charges in all the double-gate photoelectric thin film transistors so that the top gate can collect photoelectrons; the second scanning acts on the bottom grid, and aims to stably send the photoelectric signals collected from the double-grid photoelectric thin film transistor array to a computer for digital image processing at the next stage; the single chip is adopted for driving, the time sequence matching problem caused by the driving of the two chips is not needed to be considered, the time sequence matching performance is good, the single channel of the chip corresponds to the top grid or the bottom grid, signals are received and transmitted more stably, the accuracy is high, in addition, the number of the adopted driving chips is less, the occupied space of the whole system is smaller, and the manufacturing cost is lower; in addition, the arrangement of the empty scanning can clear residual current signals after one-time driving is finished, so that the power consumption is reduced; therefore, the driving system has the advantages of simple structure, good time sequence matching, high data accuracy, small occupied space, low cost, low power consumption and the like.
Drawings
The following description of the preferred embodiments of the present invention will be made in conjunction with the accompanying drawings.
FIG. 1 is a block diagram of a pixel circuit of a single double-gate phototransistor of the present invention;
FIG. 2 is a schematic diagram of the connection between the driving chip and a single double-gate TFT according to the present invention;
fig. 3 is a timing diagram of the driving dual-gate phototransistor array according to the present invention.
Detailed Description
Referring to fig. 1 to 3, the method for driving a dual-gate tft array using a single driving chip according to the present invention includes the following steps:
A. correspondingly connecting a bottom gate BG and a top gate TG of each double-gate photoelectric thin film transistor in the double-gate photoelectric thin film transistor array with different output channels of a driving chip respectively;
B. sequentially inputting a clock signal and a pulse signal to the double-gate photoelectric thin film transistor array, setting a top gate TG to be a negative voltage, setting a bottom gate BG to be the negative voltage and keeping the state when the double-gate photoelectric thin film transistor array receives the clock signal, and turning off all the double-gate photoelectric thin film transistors;
C. when the double-grid photoelectric thin film transistor array receives a pulse signal, the top grid TG is scanned line by line, and the double-grid photoelectric thin film transistor is reset line by line.
D. After scanning all the top gates TG of the rows, scanning the bottom gates BG line by line, opening the double-gate photoelectric thin film transistors line by line, and outputting a signal selected by scanning in each row by an external device connected with the source electrodes S of the double-gate photoelectric thin film transistors;
E. after scanning the bottom grid BG of the last row in the double-grid photoelectric thin film transistor array, an external reading circuit collects the scanned and selected signals in all the rows and uploads the signals to a computer for digital image processing;
F. and performing empty scanning on an output channel which is not connected to the top grid TG or the bottom grid BG on the driving chip, and finishing the acquisition of signals when the empty scanning is finished.
Specifically, CLK in fig. 3 denotes a clock signal, X denotes a pulse signal, BGn denotes a scan signal of the bottom gate BG of the nth row, TGn denotes a scan signal of the top gate TG of the nth row, and n is an integer greater than 1.
The external device and the reading circuit are known technologies, wherein the external device can be a data output end, and can also be realized by an analog-to-digital conversion circuit or a signal conditioning circuit, and the reading circuit can be realized by a common signal acquisition circuit, which is not limited herein; the driving chip in the embodiment can be a common liquid crystal display driving chip; the invention mainly utilizes two times of scanning to complete the primary drive of the double-grid photoelectric thin film transistor array; the connection mode of the double-gate photoelectric thin film transistor array and the output channel of the driving chip can be various, and the double-gate photoelectric thin film transistor array is only suitable for driving the double-gate photoelectric thin film transistor array; wherein the first scanning acts on the top gate TG to empty the charge from within the dual gate phototransistor so that the top gate TG collects the photoelectrons; the second scanning acts on the bottom grid BG, and aims to stably send photoelectric signals collected from the double-grid photoelectric thin film transistor array to a computer for digital image processing at the next stage. The method of the invention also meets the time sequence matching requirement of two-chip driving, and the single channel of the chip corresponds to the top grid TG or the bottom grid BG, so that the receiving and transmitting signals are more stable, the accuracy is high, in addition, the number of the adopted driving chips is less, the occupied space of the whole system is smaller, and the manufacturing cost is lower; in addition, the setting of the blank scanning can clear the residual current signal after the driving is finished once, thereby reducing the power consumption. Therefore, the driving system has the advantages of simple structure, good time sequence matching, high data accuracy, small occupied space, low cost, low power consumption and the like.
Referring to fig. 1 to 3, in step D, outputting a signal selected by scanning in each row by an external device connected to the source S of the dual-gate tft includes: setting the top grid TG as a negative voltage, and setting the bottom grid BG and the drain D as positive voltages, so that the bottom TFT is quickly opened, and the signal current selected by scanning sequentially flows out of the source S and then flows into the amplifier M and an external signal conditioning circuit; in the present embodiment, the amplifier M is disposed outside the dual-gate tft, specifically, the amplifier M is connected to the source S; the signal conditioning circuit is a circuit for converting an analog signal into a digital signal for data acquisition, process control, calculation, display, readout, or other purposes, and is common and not described herein.
Referring to fig. 1 to 3, in step C, the resetting of the dual-gate tft line by line includes: setting the bottom grid BG of the double-grid photoelectric thin film transistor of each row to be negative voltage so as to close the bottom TFT, and simultaneously setting the drain D to be negative voltage; the top gate TG is set to be positive voltage, the top gate TG is reset, so that the top TFT is ready for receiving optical signals and generating induced charges, further, when external light irradiates the double-gate photoelectric thin film transistor array, the MOS capacitor of the top TFT is charged, and the charge quantity of the MOS capacitor is increased along with increase of photoelectrons.
While the preferred embodiments and basic principles of the present invention have been described in detail, it will be understood by those skilled in the art that the invention is not limited to the embodiments, but is intended to cover various modifications, equivalents and alternatives falling within the scope of the invention as claimed.
Claims (2)
1. The method for driving the double-grid photoelectric thin film transistor array by adopting the single driving chip is characterized by comprising the following steps of:
A. correspondingly connecting a Bottom Gate (BG) and a Top Gate (TG) of each double-gate photoelectric thin film transistor in the double-gate photoelectric thin film transistor array with different output channels of a driving chip respectively;
B. sequentially inputting a clock signal and a pulse signal to the double-gate photoelectric thin film transistor array, setting a Top Gate (TG) as a negative voltage, setting a Bottom Gate (BG) as a negative voltage and keeping the state when the double-gate photoelectric thin film transistor array receives the clock signal, and turning off all the double-gate photoelectric thin film transistors;
C. when the double-grid photoelectric thin film transistor array receives a pulse signal, the Top Grid (TG) is scanned line by line, and the double-grid photoelectric thin film transistor is reset line by line;
D. when the Top Gates (TG) of all the rows are scanned, the Bottom Gates (BG) are scanned line by line, the double-gate photoelectric thin film transistors are opened line by line, and an external device connected with the source electrodes (S) of the double-gate photoelectric thin film transistors outputs signals selected by scanning in each row;
E. after scanning the Bottom Grid (BG) of the last row in the double-grid photoelectric thin film transistor array, an external reading circuit collects the scanned and selected signals in all the rows and uploads the signals to a computer for digital image processing;
F. performing empty scanning on an output channel which is not connected with a Top Grid (TG) or a Bottom Grid (BG) on a driving chip, and finishing the acquisition of signals when the empty scanning is finished;
wherein, the step C of resetting the double-gate photoelectric thin film transistor line by line therewith comprises the following steps: setting the Bottom Grid (BG) of the double-grid photoelectric thin film transistor of each row to negative voltage, thereby closing the bottom TFT and simultaneously setting the drain electrode (D) to negative voltage; the Top Gate (TG) is set to a positive voltage, and the Top Gate (TG) is reset.
2. The method for driving a dual-gate TFT array with a single driver chip as claimed in claim 1, wherein the step D of outputting the signal selected by scanning in each row by an external device connected to the source (S) of the dual-gate TFT comprises: the Top Grid (TG) is set to be negative voltage, the Bottom Grid (BG) and the drain (D) are set to be positive voltage, so that the bottom TFT is rapidly turned on, and signal current selected by scanning sequentially flows out of the source (S) and then flows into the amplifier (M) and an external signal conditioning circuit.
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Citations (7)
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| CA2228153A1 (en) * | 1995-07-31 | 1997-02-13 | Surendra Pal Singh | Method and apparatus of operating a dual gate tft electromagnetic radiation imaging device |
| US6207530B1 (en) * | 1998-06-19 | 2001-03-27 | International Business Machines Corporation | Dual gate FET and process |
| CN1649152A (en) * | 2004-01-29 | 2005-08-03 | 卡西欧计算机株式会社 | Transistor array and its producing method, and image processing device |
| CN104573648A (en) * | 2014-12-31 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Touch display screen drive and fingerprint image acquisition method |
| CN105428421A (en) * | 2015-11-11 | 2016-03-23 | 友达光电股份有限公司 | Thin film transistor and method of operating the same |
| CN106295540A (en) * | 2016-08-02 | 2017-01-04 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Use single device to realize display to drive and the method for fingerprint image acquisition |
| CN107547075A (en) * | 2016-06-24 | 2018-01-05 | 英飞凌科技股份有限公司 | Switching device |
-
2018
- 2018-01-08 CN CN201810014955.0A patent/CN110021254B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2228153A1 (en) * | 1995-07-31 | 1997-02-13 | Surendra Pal Singh | Method and apparatus of operating a dual gate tft electromagnetic radiation imaging device |
| US6207530B1 (en) * | 1998-06-19 | 2001-03-27 | International Business Machines Corporation | Dual gate FET and process |
| CN1649152A (en) * | 2004-01-29 | 2005-08-03 | 卡西欧计算机株式会社 | Transistor array and its producing method, and image processing device |
| CN104573648A (en) * | 2014-12-31 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Touch display screen drive and fingerprint image acquisition method |
| CN105428421A (en) * | 2015-11-11 | 2016-03-23 | 友达光电股份有限公司 | Thin film transistor and method of operating the same |
| CN107547075A (en) * | 2016-06-24 | 2018-01-05 | 英飞凌科技股份有限公司 | Switching device |
| CN106295540A (en) * | 2016-08-02 | 2017-01-04 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Use single device to realize display to drive and the method for fingerprint image acquisition |
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