CN110017900B - High-low temperature infrared imaging system detection device - Google Patents
High-low temperature infrared imaging system detection device Download PDFInfo
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- CN110017900B CN110017900B CN201810017158.8A CN201810017158A CN110017900B CN 110017900 B CN110017900 B CN 110017900B CN 201810017158 A CN201810017158 A CN 201810017158A CN 110017900 B CN110017900 B CN 110017900B
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- 238000003331 infrared imaging Methods 0.000 title claims abstract description 41
- 238000001514 detection method Methods 0.000 title claims abstract description 30
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- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000012360 testing method Methods 0.000 claims abstract description 15
- 238000004088 simulation Methods 0.000 claims abstract description 11
- 230000005457 Black-body radiation Effects 0.000 claims description 41
- 229910000831 Steel Inorganic materials 0.000 claims description 39
- 229910052738 indium Inorganic materials 0.000 claims description 39
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 39
- 239000010959 steel Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 230000008030 elimination Effects 0.000 claims description 11
- 238000003379 elimination reaction Methods 0.000 claims description 11
- 239000003973 paint Substances 0.000 claims description 9
- 230000017525 heat dissipation Effects 0.000 claims description 8
- 239000013080 microcrystalline material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
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- 230000006978 adaptation Effects 0.000 description 2
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
- G01J5/53—Reference sources, e.g. standard lamps; Black bodies
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Abstract
The invention provides a high-low temperature infrared imaging system detection device which comprises a platform supporting assembly, a target black body assembly, a background black body assembly, a target assembly, a high-low temperature optical assembly, a first heat difference eliminating mechanism and a second heat difference eliminating mechanism, wherein the target black body assembly, the background black body assembly and the target assembly are detachably arranged on the platform supporting assembly, target infrared radiation generated by the target black body assembly and background infrared radiation generated by the background black body assembly enter the high-low temperature optical assembly through the target assembly to form an infrared target with a background, the first heat difference eliminating mechanism is used for ensuring that the distance between the target assembly and a secondary mirror unit is unchanged, and the second heat difference eliminating mechanism is used for ensuring that the distance between the secondary mirror unit and a main mirror unit is unchanged. By applying the technical scheme of the invention, the technical problem that the detection device of the infrared imaging system in the prior art cannot realize target simulation test under deep space background, complex background and wide temperature range is solved.
Description
Technical Field
The invention relates to the technical field of optical testing, in particular to a detection device of a high-low temperature infrared imaging system.
Background
The infrared imaging seeker is more and more widely applied to modern missile weapon systems due to strong anti-interference capability and high guidance precision. In the process of carrying out laboratory simulation test on the infrared imaging seeker, the infrared imaging system detection device is the most important simulation test equipment applied to the infrared imaging seeker. The infrared imaging system detection device can simulate target infrared information actually observed in the actual combat process of the infrared imaging seeker to form a specific infrared target, so that the combat effect of the infrared imaging seeker is accurately and expectedly evaluated in the early-stage design and middle-stage test process of the infrared imaging seeker, the cyclic improvement design is found to be insufficient, the development repetition is reduced, and the development period is shortened. In addition, modern infrared imaging seeker develops towards diversification, specialization and the like, and striking targets and backgrounds thereof gradually develop from the current normal-temperature background to deep-space backgrounds, complex backgrounds and wide-temperature ranges. The traditional infrared optical detection system can not meet the requirements, and an infrared imaging system detection device with a wide temperature range is increasingly required for carrying out simulation tests.
Disclosure of Invention
The invention provides a high-low temperature infrared imaging system detection device, which can solve the technical problem that the infrared imaging system detection device in the prior art cannot realize target simulation tests under deep space background, complex background and wide temperature range. The invention provides a detection device of a high-low temperature infrared imaging system, which comprises: a platform support assembly; the target black body assembly is detachably arranged on the platform supporting assembly and is used for generating target infrared radiation; the background black body assembly is detachably arranged on the platform supporting assembly and is used for generating background infrared radiation; the target assembly is detachably arranged on the platform supporting assembly and is arranged between the target black body assembly and the background black body assembly; the high-low temperature optical assembly comprises a primary mirror unit and a secondary mirror unit, the target assembly is located at the focal plane of the high-low temperature optical assembly, target infrared radiation generated by the target black body assembly and background infrared radiation generated by the background black body assembly enter the high-low temperature optical assembly through the target assembly, and the high-low temperature optical assembly is used for forming an infrared target with a background for simulation test of the infrared imaging system; the first heat difference eliminating mechanism is arranged between the target assembly and the secondary mirror unit, and the second heat difference eliminating mechanism is arranged between the secondary mirror unit and the primary mirror unit; in a wide temperature range, when the temperature changes, the first heat difference eliminating mechanism is used for ensuring that the distance between the target assembly and the secondary mirror unit is unchanged, the second heat difference eliminating mechanism is used for ensuring that the distance between the secondary mirror unit and the main mirror unit is unchanged, and the wide temperature range is-60 ℃ to 70 ℃. Further, the first heat dissipation difference mechanism comprises a first indium steel bar, the second heat dissipation difference mechanism comprises a second indium steel bar, one end of the first indium steel bar is connected with the target assembly, the other end of the first indium steel bar is connected with the secondary mirror unit, one end of the second indium steel bar is connected with the secondary mirror unit, and the other end of the second indium steel bar is connected with the primary mirror unit. Further, the target assembly comprises a target wheel and a target, the target wheel is provided with a target accommodating part, the target is arranged in the target accommodating part, and the target is located at the focal plane of the high-low temperature optical assembly. Further, the target is a plurality of, and the target wheel has a plurality of target accommodation portions, and a plurality of targets one-to-one sets up in a plurality of target accommodation portions, and the target includes round hole target, four-bar target or rectangle target. Further, the target has a first side and a second side which are arranged oppositely, the target black body assembly is arranged on the first side of the target and comprises a target black body radiation source and a first controller, the first controller is used for controlling the amount of target infrared radiation generated by the target black body radiation source, and a middle radiation hole of the target black body radiation source is coincided with the central axis of the target. Further, the background black body assembly is disposed on a second side of the target, the background black body assembly including a background black body radiation source and a second controller for controlling an amount of background infrared radiation generated by the background black body radiation source. Furthermore, the detection device of the high-low temperature infrared imaging system also comprises a target base, a secondary mirror base and a main mirror base, wherein the target assembly is arranged on the target base, the secondary mirror unit is arranged on the secondary mirror base, and the main mirror unit is arranged on the main mirror base; the first heat difference eliminating mechanism further comprises a first locking part and a second locking part, the first locking part is arranged on the target base, the second locking part is arranged on the secondary mirror base, one end of a first indium steel rod is connected with the target assembly through the first locking part, and the other end of the first indium steel rod is connected with the secondary mirror unit through the second locking part; the second heat dissipation difference mechanism further comprises a third locking portion and a fourth locking portion, the third locking portion is arranged on the platform supporting assembly, the fourth locking portion is arranged on the main mirror base, one end of the second indium steel bar is connected with the secondary mirror unit through the third locking portion, and the other end of the second indium steel bar is connected with the main mirror unit through the fourth locking portion. Further, the primary mirror unit comprises a primary mirror substrate and a first gold film, the first gold film is arranged on the surface of the primary mirror substrate, the secondary mirror unit comprises a secondary mirror substrate and a second gold film, the second gold film is arranged on the surface of the secondary mirror substrate, and the primary mirror substrate and the secondary mirror substrate are made of microcrystalline materials. Further, the target black body assembly further comprises a first high-emissivity black paint layer, and the first high-emissivity black paint layer is arranged on the surface of the target black body radiation source; and/or the background blackbody assembly further comprises a second high emissivity black paint layer disposed on the surface of the background blackbody radiation source. Further, the radius of the radiation surface of the target blackbody radiation source ranges from 10mm to 100mm, and the radius of the radiation surface of the background blackbody radiation source ranges from 30mm to 200 mm. By applying the technical scheme of the invention, the first heat difference eliminating mechanism is arranged between the target assembly and the secondary mirror unit, the second heat difference eliminating mechanism is arranged between the secondary mirror unit and the main mirror unit, and the first heat difference eliminating mechanism can ensure that the distance between the target assembly and the secondary mirror unit is not changed and the second heat difference eliminating mechanism can ensure that the distance between the secondary mirror unit and the main mirror unit is not changed when the temperature is changed in a wide temperature range, so that the temperature adaptation range of the detection device of the high-low temperature infrared imaging system can be expanded, and the imaging quality of the optical system can be improved. In addition, because the target assembly, the target black body assembly and the background black body assembly are detachably arranged on the platform supporting assembly, in practical application, the modules can be combined according to test parameters and requirements, so that the space volume of the system can be greatly reduced, the complexity of the system is reduced, and the precision of light path alignment and the expandability of the detection device are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. Fig. 1 is a schematic structural diagram of a detection device of a high-low temperature infrared imaging system according to an embodiment of the invention; FIG. 2 shows a top view of the detection apparatus of the high and low temperature infrared imaging system of FIG. 1; fig. 3 is a schematic diagram illustrating an operation structure of a detection apparatus of a high and low temperature infrared imaging system according to an embodiment of the present invention. Wherein the figures include the following reference numerals: 10. a platform support assembly; 11. a base; 12. a target base supporting seat; 13. a primary mirror base support base; 20. a target blackbody component; 30. a background blackbody component; 40. a target assembly; 50. a high and low temperature optical component; 51. a main mirror unit; 52. a secondary mirror unit; 60. a first heat differential elimination mechanism; 70. a second heat differential elimination mechanism; 80. a target mount; 90. a secondary mirror base; 100. a main mirror base.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
As shown in fig. 1, according to an embodiment of the present invention, there is provided a detection apparatus for a high and low temperature infrared imaging system, the detection apparatus for an infrared imaging system comprises a platform support assembly 10, a target black body assembly 20, a background black body assembly 30, a target assembly 40, a high and low temperature optical assembly 50, a first thermal difference elimination mechanism 60 and a second thermal difference elimination mechanism 70, wherein the target black body assembly 20 is detachably disposed on the platform support assembly 10, the target black body assembly 20 is used for generating target infrared radiation, the background black body assembly 30 is detachably disposed on the platform support assembly 10, the background black body assembly 30 is used for generating background infrared radiation, the target assembly 40 is detachably disposed on the platform support assembly 10, the target assembly 40 is disposed between the target black body assembly 20 and the background black body assembly 30, the high and low temperature optical assembly 50 comprises a primary mirror unit 51 and a secondary mirror unit 52, the target assembly 40 is located at the focal plane of the high and low temperature optical assembly 50, target infrared radiation generated by the target black body assembly 20 and background infrared radiation generated by the background black body assembly 30 both enter the high and low temperature optical assembly 50 through the target assembly 40, the high and low temperature optical assembly 50 is used for forming an infrared target with a background for simulation test of an infrared imaging system, the first heat difference eliminating mechanism 60 is arranged between the target assembly 40 and the secondary mirror unit 52, and the second heat difference eliminating mechanism 70 is arranged between the secondary mirror unit 52 and the primary mirror unit 51; wherein, in a wide temperature range, when the temperature changes, the first heat difference eliminating mechanism 60 is used for ensuring that the distance between the target assembly 40 and the secondary mirror unit 52 is not changed, the second heat difference eliminating mechanism 70 is used for ensuring that the distance between the secondary mirror unit 52 and the primary mirror unit 51 is not changed, and the wide temperature range is-60 ℃ to 70 ℃.
By applying the configuration mode, the first heat difference eliminating mechanism 60 is arranged between the target assembly 40 and the secondary mirror unit 52, the second heat difference eliminating mechanism 70 is arranged between the secondary mirror unit 52 and the main mirror unit 51, and in a wide temperature range, when the temperature changes, the first heat difference eliminating mechanism 60 can ensure that the distance between the target assembly 40 and the secondary mirror unit 52 is unchanged, and the second heat difference eliminating mechanism 70 can ensure that the distance between the secondary mirror unit 52 and the main mirror unit 51 is unchanged, so that the temperature adaptation range of the high and low temperature infrared imaging system detection device can be expanded, and the imaging quality of the optical system can be improved. In addition, because the target assembly 40, the target black body assembly 20 and the background black body assembly 30 of the present invention are detachably disposed on the platform supporting assembly 10, in practical application, the modules can be combined according to the test parameters and requirements, so as to greatly reduce the space volume of the system, reduce the complexity of the system, and improve the precision of the light path alignment and the expandability of the detection apparatus.
As an embodiment of the present invention, the background blackbody assembly 30 may be removed from the platform support assembly 10 when it is desired to simulate a background temperature as a characteristic target of the ambient temperature. When it is desired to simulate a characteristic target with an ambient temperature as the target and a background blackbody temperature as the background, the target blackbody assembly 20 may be removed from the platform support assembly 10. In addition, the target assembly 40 may also be replaced to test more target parameters. The mode of the invention can combine all modules according to the test parameters and requirements, greatly reduces the space volume of the system and improves the expandability of the detection device.
Further, in the present invention, as shown in fig. 1 and 2, the first differential heat dissipation mechanism 60 includes a first indium steel rod, the second differential heat dissipation mechanism 70 includes a second indium steel rod, one end of the first indium steel rod is connected to the target assembly 40, the other end of the first indium steel rod is connected to the secondary mirror unit 52, one end of the second indium steel rod is connected to the secondary mirror unit 52, and the other end of the second indium steel rod is connected to the primary mirror unit 51.
By applying the configuration mode, as the linear expansion coefficients of the first indium steel rod and the second indium steel rod are extremely small, the first indium steel rod and the second indium steel rod are basically not changed when the temperature is changed in a wide temperature range, so that the distance between the target assembly 40 and the secondary mirror unit 52 and the distance between the secondary mirror unit 52 and the primary mirror unit 51 can be kept unchanged, and the imaging quality of the optical system can be ensured not to be obviously changed along with the temperature change.
Further, in the present invention, the target assembly 40 includes a target wheel having a target receptacle and a target disposed within the target receptacle, the target being located at the focal plane of the high and low temperature optical assembly 50. As one embodiment of the present invention, a through hole is provided on the target wheel, and the through hole forms a target accommodating portion. Further, in order to simulate targets with different feature patterns, the target assembly may be configured to include a plurality of targets, a plurality of target through holes are provided on the target wheel, the plurality of targets are provided in the plurality of target through holes in a one-to-one correspondence, and the target type includes a round hole target, a four-bar target, or a rectangular target. Wherein, the target chooses indium steel material to make to it can be applicable to extensive operating temperature.
Further, in the present invention, the target has a first side and a second side opposite to each other, the target blackbody assembly 20 is disposed on the first side of the target, and in order to generate the target infrared radiation, the target blackbody assembly 20 may be configured to include a target blackbody radiation source and a first controller, the first controller is configured to control an amount of the target infrared radiation generated by the target blackbody radiation source, and a central radiation hole of the target blackbody radiation source coincides with a central axis of the target.
As an embodiment of the present invention, as shown in fig. 1 to 3, the target blackbody radiation source is located right behind the target, and the radiation hole of the target blackbody radiation source coincides with the central axis of the target, wherein the radius of the radiation surface of the target blackbody radiation source ranges from 10mm to 100 mm. Further, in the present invention, in order to improve the emissivity of the target blackbody radiation source and further improve the simulation accuracy, the target blackbody assembly 20 may be configured to further include a first high emissivity black paint layer disposed on the surface of the target blackbody radiation source.
Further, in the present invention, the background black body assembly 30 is disposed on a second side of the target, and in order to generate the background infrared radiation, the background black body assembly 30 includes a background black body radiation source and a second controller for controlling an amount of the background infrared radiation generated by the background black body radiation source. As an embodiment of the present invention, as shown in fig. 1 to 3, the background black body radiation source is located opposite to the target, the central height of the background black body radiation source coincides with the central height of the target, and the radius of the radiation surface of the background black body radiation source ranges from 30mm to 200 mm. Further, in the present invention, in order to improve the emissivity of the background black body radiation source and further improve the simulation accuracy, the background black body assembly 30 may be configured to further include a second high emissivity black paint layer, and the second high emissivity black paint layer is disposed on the surface of the background black body radiation source.
In addition, in the invention, a surface source black body is selected as the target black body radiation source and the background black body radiation source, the radiation directionality of the surface source black body is poor, the requirement on the accuracy of the light path is low when the light path is adjusted, and the black body can radiate certain infrared radiation when the temperature is raised to a certain temperature (the ambient temperature is up to a certain temperature within 120 ℃) through the black body radiation theory so as to be used for infrared radiation calibration.
Further, in the present invention, the detection apparatus for the high and low temperature infrared imaging system further includes a target base 80, a secondary mirror base 90 and a primary mirror base 100, the target assembly 40 is disposed on the target base 80, the secondary mirror unit 52 is disposed on the secondary mirror base 90, the primary mirror unit 51 is disposed on the primary mirror base 100, the first heat difference removing mechanism 60 further includes a first locking portion and a second locking portion, the first locking portion is disposed on the target base 80, the second locking portion is disposed on the secondary mirror base 90, one end of the first indium steel rod is connected to the target assembly 40 through the first locking portion, and the other end of the first indium steel rod is connected to the secondary mirror unit 52 through the second locking portion; the second thermal difference elimination mechanism 70 further comprises a third locking portion and a fourth locking portion, the third locking portion is arranged on the platform support assembly 10, the fourth locking portion is arranged on the primary mirror base 100, one end of the second indium steel rod is connected with the secondary mirror unit 52 through the third locking portion, and the other end of the second indium steel rod is connected with the primary mirror unit 51 through the fourth locking portion.
In addition, in the present invention, the platform supporting assembly 10 includes a base 11, a target base supporting seat 12 and a primary mirror base supporting seat 13, the target base supporting seat 12 and the primary mirror base supporting seat 13 are both fixedly disposed on the base 11, wherein the target base 80 is disposed on the target base supporting seat 12, the primary mirror base 100 is disposed on the primary mirror base supporting seat 13, a third locking portion is fixedly disposed on the platform supporting assembly 10, a second locking portion is fixedly disposed on the third locking portion, the secondary mirror base 90 is fixedly disposed on the third locking portion, and the first indium steel rod and the second indium steel rod are disposed at an included angle.
Further, in the present invention, the high-low temperature optical component 50 adopts a reflective optical structure, the primary mirror unit 51 includes a primary mirror substrate and a first gold film, the first gold film is disposed on the surface of the primary mirror substrate, the secondary mirror unit 52 includes a secondary mirror substrate and a second gold film, the second gold film is disposed on the surface of the secondary mirror substrate, and the materials of the primary mirror substrate and the secondary mirror substrate are all microcrystalline materials.
By applying the configuration mode, the materials of the primary mirror substrate and the secondary mirror substrate are both configured into microcrystalline materials with smaller linear expansion coefficients, so that the primary mirror substrate and the secondary mirror substrate can be prevented from changing when the temperature changes greatly. By providing the first gold film on the primary mirror substrate surface and the second gold film on the secondary mirror substrate surface, the reflectance of the primary mirror unit and the secondary mirror unit can be improved, thereby improving the simulation accuracy. The aperture ranges of the primary mirror unit 51 and the secondary mirror unit 52 are 10mm to 500mm, the primary mirror unit 51 is arranged on the primary mirror base 100, the secondary mirror unit 52 is arranged on the secondary mirror base 90, and the lower parts of the primary mirror base 100 and the secondary mirror base 90 are provided with second indium steel rods, so that the distance between the primary mirror unit 51 and the secondary mirror unit 52 can be ensured not to change along with the temperature due to the extremely small linear expansion coefficient of the second indium steel rods.
For further understanding of the present invention, the operation of the detection device of the high and low temperature infrared imaging system of the present invention will be described in detail with reference to fig. 1 to 3.
As shown in fig. 1 to 3, the present invention adopts a high-low temperature collimator as a detection device of a high-low temperature infrared imaging system, the high-low temperature collimator includes a platform support assembly 10, a target blackbody assembly 20, a background blackbody assembly 30, a target assembly 40, a high-low temperature optical assembly 50, a first thermal difference elimination mechanism 60 and a second thermal difference elimination mechanism 70, six target holes are uniformly distributed on a target wheel of the target assembly 40, and a target with high reflectivity is installed in each target hole. The high-low temperature parallel light tube can simulate an infrared target with a background.
Specifically, the high-low temperature collimator operates in the high-low temperature chamber, the first controller controls the target blackbody assembly 20 to generate a certain amount of target infrared radiation, the target blackbody radiation source is located right behind the target, a middle radiation hole of the target blackbody radiation source coincides with a central axis of the target, and the target infrared radiation emitted by the target blackbody radiation source passes through the target hole and enters the high-low temperature optical assembly 50. The center height of the background black body radiation source coincides with the center height of the target, and infrared radiation emitted by the background black body radiation source enters the high-low temperature optical assembly 50 after passing through the reflecting surface of the target. The target assembly 40 is placed at the focal plane of the high-low temperature optical assembly 50, the high-low temperature optical assembly 50 collects and collimates target infrared radiation and background infrared radiation at the target, an infinite, uniform, non-vignetting, clear infrared standard image with a background is formed at the exit pupil, the infrared imager receives the infrared target with the background and generates a corresponding response, and the test of the infrared imager can be completed according to a specific mathematical model.
In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the orientation words such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc. are usually based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and in the case of not making a reverse description, these orientation words do not indicate and imply that the device or element being referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore, should not be considered as limiting the scope of the present invention; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The detection device for the high-low temperature infrared imaging system is characterized by comprising:
a platform support assembly (10);
a target blackbody assembly (20), the target blackbody assembly (20) being removably disposed on the platform support assembly (10), the target blackbody assembly (20) being for generating target infrared radiation;
the background black body assembly (30), the background black body assembly (30) is detachably arranged on the platform supporting assembly (10), and the background black body assembly (30) is used for generating background infrared radiation;
a target assembly (40), wherein the target assembly (40) is detachably arranged on the platform supporting assembly (10), and the target assembly (40) is arranged between the target black body assembly (20) and the background black body assembly (30);
a high-low temperature optical assembly (50), wherein the high-low temperature optical assembly (50) comprises a primary mirror unit (51) and a secondary mirror unit (52), the target assembly (40) is located at a focal plane of the high-low temperature optical assembly (50), target infrared radiation generated by the target black body assembly (20) and background infrared radiation generated by the background black body assembly (30) both enter the high-low temperature optical assembly (50) through the target assembly (40), and the high-low temperature optical assembly (50) is used for forming an infrared target with a background for simulation test of an infrared imaging system;
a first thermal differential elimination mechanism (60) and a second thermal differential elimination mechanism (70), the first thermal differential elimination mechanism (60) being disposed between the target assembly (40) and the secondary mirror unit (52), the second thermal differential elimination mechanism (70) being disposed between the secondary mirror unit (52) and the primary mirror unit (51); wherein, in the high-low temperature range of-60 ℃ to 70 ℃, when the temperature changes, the first heat difference eliminating mechanism (60) is used for ensuring that the distance between the target component (40) and the secondary mirror unit (52) is not changed, and the second heat difference eliminating mechanism (70) is used for ensuring that the distance between the secondary mirror unit (52) and the primary mirror unit (51) is not changed;
the first heat dissipation difference mechanism (60) comprises a first indium steel bar, the second heat dissipation difference mechanism (70) comprises a second indium steel bar, one end of the first indium steel bar is connected with the target assembly (40), the other end of the first indium steel bar is connected with the secondary mirror unit (52), one end of the second indium steel bar is connected with the secondary mirror unit (52), and the other end of the second indium steel bar is connected with the primary mirror unit (51).
2. The high and low temperature infrared imaging system detecting device according to claim 1, wherein the target assembly (40) comprises a target wheel and a target, the target wheel has a target accommodating portion, the target is arranged in the target accommodating portion, and the target is located at a focal plane of the high and low temperature optical assembly (50).
3. The infrared imaging system detection device of claim 2, wherein the number of targets is plural, the target wheel has a plurality of target receiving portions, the plural targets are disposed in the plural target receiving portions in a one-to-one correspondence, and the targets include a round hole target, a four-bar target, or a rectangular target.
4. The high and low temperature infrared imaging system detecting device as claimed in claim 2, wherein the target has a first side and a second side opposite to each other, the target black body assembly (20) is disposed on the first side of the target, the target black body assembly (20) comprises a target black body radiation source and a first controller, the first controller is configured to control an amount of target infrared radiation generated by the target black body radiation source, and a central radiation hole of the target black body radiation source coincides with a central axis of the target.
5. The infrared imaging system detection device of claim 4, wherein the background black body assembly (30) is disposed on a second side of the target, the background black body assembly (30) including a background black body radiation source and a second controller for controlling an amount of background infrared radiation generated by the background black body radiation source.
6. The detecting device of high and low temperature infrared imaging system according to claim 1, further comprising a target base (80), a secondary mirror base (90) and a primary mirror base (100), wherein the target assembly (40) is disposed on the target base (80), the secondary mirror unit (52) is disposed on the secondary mirror base (90), and the primary mirror unit (51) is disposed on the primary mirror base (100); the first heat difference eliminating mechanism (60) further comprises a first locking part and a second locking part, the first locking part is arranged on the target base (80), the second locking part is arranged on the secondary mirror base (90), one end of the first indium steel rod is connected with the target assembly (40) through the first locking part, and the other end of the first indium steel rod is connected with the secondary mirror unit (52) through the second locking part; the second heat dissipation difference mechanism (70) further comprises a third locking portion and a fourth locking portion, the third locking portion is arranged on the platform supporting assembly (10), the fourth locking portion is arranged on the primary mirror base (100), one end of a second indium steel bar is connected with the secondary mirror unit (52) through the third locking portion, and the other end of the second indium steel bar is connected with the primary mirror unit (51) through the fourth locking portion.
7. The detection device of the high and low temperature infrared imaging system according to claim 5, wherein the primary mirror unit (51) comprises a primary mirror substrate and a first gold film, the first gold film is arranged on the surface of the primary mirror substrate, the secondary mirror unit (52) comprises a secondary mirror substrate and a second gold film, the second gold film is arranged on the surface of the secondary mirror substrate, and the primary mirror substrate and the secondary mirror substrate are both made of microcrystalline materials.
8. The high and low temperature infrared imaging system detecting device as claimed in claim 7, wherein the target black body assembly (20) further comprises a first high emissivity black paint layer disposed on the target black body radiation source surface; and/or the background black body assembly (30) further comprises a second high emissivity black paint layer, and the second high emissivity black paint layer is arranged on the surface of the background black body radiation source.
9. The detecting device for the high and low temperature infrared imaging system according to claim 8, wherein the radius of the radiation surface of the target black body radiation source is 10mm to 100mm, and the radius of the radiation surface of the background black body radiation source is 30mm to 200 mm.
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| CN110987192B (en) * | 2019-11-26 | 2021-05-07 | 北京振兴计量测试研究所 | Engine field temperature measuring system and method |
| CN111006774B (en) * | 2019-12-06 | 2021-05-07 | 北京振兴计量测试研究所 | System and method for testing calibration blackbody radiation source manufactured by MEMS (micro-electromechanical systems) process |
| CN111366243B (en) * | 2020-02-24 | 2021-06-11 | 上海航天控制技术研究所 | Device for testing detection capability of infrared camera on low-temperature target in deep space background |
| CN111289148B (en) * | 2020-03-27 | 2021-10-08 | 中北大学 | Transient fireball parameter acquisition method based on field calibration |
| CN113029525B (en) * | 2021-03-18 | 2023-03-21 | 哈尔滨新光光电科技股份有限公司 | Infrared scene simulation system, infrared scene simulation method and DMD control method |
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