CN110016720B - 一种内部缺陷规则排列的三维光子晶体的制备方法 - Google Patents
一种内部缺陷规则排列的三维光子晶体的制备方法 Download PDFInfo
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- CN110016720B CN110016720B CN201910414264.4A CN201910414264A CN110016720B CN 110016720 B CN110016720 B CN 110016720B CN 201910414264 A CN201910414264 A CN 201910414264A CN 110016720 B CN110016720 B CN 110016720B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
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CN111705361B (zh) * | 2020-06-15 | 2021-05-11 | 杭州电子科技大学 | 一种内部球形空腔阵列稳定成形的三维光子晶体制备方法 |
CN112028076A (zh) * | 2020-09-04 | 2020-12-04 | 杭州电子科技大学 | 一种基于高温及电-声耦合作用的微纳空心球制备方法 |
Citations (3)
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CN1802579A (zh) * | 2002-01-17 | 2006-07-12 | 微米技术有限公司 | 三维光子晶体波导结构 |
CN1987556A (zh) * | 2006-12-13 | 2007-06-27 | 中国科学院光电技术研究所 | 动态光子晶体产生方法 |
CN105439083A (zh) * | 2015-11-17 | 2016-03-30 | 杭州电子科技大学 | 一种基于超声驻波场制备硅微纳结构阵列的方法 |
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Patent Citations (3)
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CN1802579A (zh) * | 2002-01-17 | 2006-07-12 | 微米技术有限公司 | 三维光子晶体波导结构 |
CN1987556A (zh) * | 2006-12-13 | 2007-06-27 | 中国科学院光电技术研究所 | 动态光子晶体产生方法 |
CN105439083A (zh) * | 2015-11-17 | 2016-03-30 | 杭州电子科技大学 | 一种基于超声驻波场制备硅微纳结构阵列的方法 |
Non-Patent Citations (2)
Title |
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Three-dimensional photonic crystals based on macroporous silicon with modulated pore diameter;J. Schilling等;《APPLIED PHYSICS LETTERS》;20010226;第78卷(第9期);第1180-1182页 * |
基于宏孔硅的三维光子晶体制备技术研究;徐雨萌;《万方数据库》;20160504;第4-5页 * |
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