CN110011641A - 基于电容补偿的数控衰减器 - Google Patents
基于电容补偿的数控衰减器 Download PDFInfo
- Publication number
- CN110011641A CN110011641A CN201811031215.4A CN201811031215A CN110011641A CN 110011641 A CN110011641 A CN 110011641A CN 201811031215 A CN201811031215 A CN 201811031215A CN 110011641 A CN110011641 A CN 110011641A
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- CN
- China
- Prior art keywords
- resistance
- attenuator
- transistor
- resistor
- numerical
- Prior art date
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- Pending
Links
- 230000005540 biological transmission Effects 0.000 claims abstract description 21
- 239000003990 capacitor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000013016 damping Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000013461 design Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
Landscapes
- Networks Using Active Elements (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811031215.4A CN110011641A (zh) | 2018-09-05 | 2018-09-05 | 基于电容补偿的数控衰减器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811031215.4A CN110011641A (zh) | 2018-09-05 | 2018-09-05 | 基于电容补偿的数控衰减器 |
Publications (1)
Publication Number | Publication Date |
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CN110011641A true CN110011641A (zh) | 2019-07-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811031215.4A Pending CN110011641A (zh) | 2018-09-05 | 2018-09-05 | 基于电容补偿的数控衰减器 |
Country Status (1)
Country | Link |
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CN (1) | CN110011641A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111490763A (zh) * | 2020-06-24 | 2020-08-04 | 浙江铖昌科技有限公司 | 耐功率的场效应管开关、开关限幅芯片及射频前端系统 |
WO2021259158A1 (zh) * | 2020-06-22 | 2021-12-30 | 中兴通讯股份有限公司 | 掩体单元确定方法、装置、设备和存储介质 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103427780A (zh) * | 2013-08-31 | 2013-12-04 | 西安电子科技大学 | 半分布式无源可变衰减器 |
CN104617908A (zh) * | 2015-01-30 | 2015-05-13 | 黄华 | 应用于微波毫米波的低相移衰减器 |
CN104852706A (zh) * | 2015-01-30 | 2015-08-19 | 黄华 | 低附加相移数字衰减器 |
CN107707218A (zh) * | 2017-09-18 | 2018-02-16 | 曾传德 | 基于低通滤波网络的开关内嵌式五位数控衰减器 |
-
2018
- 2018-09-05 CN CN201811031215.4A patent/CN110011641A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103427780A (zh) * | 2013-08-31 | 2013-12-04 | 西安电子科技大学 | 半分布式无源可变衰减器 |
CN104617908A (zh) * | 2015-01-30 | 2015-05-13 | 黄华 | 应用于微波毫米波的低相移衰减器 |
CN104852706A (zh) * | 2015-01-30 | 2015-08-19 | 黄华 | 低附加相移数字衰减器 |
CN107707218A (zh) * | 2017-09-18 | 2018-02-16 | 曾传德 | 基于低通滤波网络的开关内嵌式五位数控衰减器 |
Non-Patent Citations (1)
Title |
---|
张顺启: "晶体管脉冲与数字电路", vol. 1, 31 March 1985, 天津科学技术出版社, pages: 28 - 30 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021259158A1 (zh) * | 2020-06-22 | 2021-12-30 | 中兴通讯股份有限公司 | 掩体单元确定方法、装置、设备和存储介质 |
CN111490763A (zh) * | 2020-06-24 | 2020-08-04 | 浙江铖昌科技有限公司 | 耐功率的场效应管开关、开关限幅芯片及射频前端系统 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Wang Liping Inventor after: Zheng Qin Inventor after: Liu Liping Inventor after: Zhou Jiawu Inventor before: Wang Liping Inventor before: Zheng Qin Inventor before: Liu Liping Inventor before: Zhou Jiawu Inventor before: Yu Faxin |
|
CB03 | Change of inventor or designer information | ||
CB02 | Change of applicant information |
Address after: Room 601, Building No. 3, Xiyuan No. 3, Sandun Town, Xihu District, Hangzhou City, Zhejiang 310000 Applicant after: Zhejiang Chengchang Technology Co., Ltd Address before: 310030 601 Building 5, Xiyuan three road, three pier Town, Xihu District, Hangzhou, Zhejiang, 3 Applicant before: ZHEJIANG CHENGCHANG TECHNOLOGY Co.,Ltd. |
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CB02 | Change of applicant information |