CN110010730A - A kind of LED growing method reducing epitaxial wafer warpage - Google Patents
A kind of LED growing method reducing epitaxial wafer warpage Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000012010 growth Effects 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 21
- 239000010980 sapphire Substances 0.000 claims abstract description 21
- 230000008859 change Effects 0.000 claims abstract description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 238000005546 reactive sputtering Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims 1
- 239000012634 fragment Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 7
- 230000001186 cumulative effect Effects 0.000 abstract description 5
- 238000000407 epitaxy Methods 0.000 abstract description 5
- 238000012797 qualification Methods 0.000 abstract description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 25
- 239000000463 material Substances 0.000 description 19
- 239000011777 magnesium Substances 0.000 description 16
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
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- 230000007717 exclusion Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
The application discloses a kind of LED growing method for reducing epitaxial wafer warpage, successively includes: processing substrate, growth N-type GaN layer, cyclical growth active layer, growing P-type AlGaN layer, growth P-type GaN layer, cooling down.Handling substrate includes growing AIN layer and InxGa(1‑x)N layers, and pass through O during control A1N film2The regular gradual change of flow eliminates Sapphire Substrate to the cumulative stress effect of GaN film, reduces epitaxial wafer warpage, improve the qualification rate of GaN epitaxy piece, reduce fragment rate.
Description
Technical field
This application involves LED epitaxial scheme applied technical field, specifically, being related to a kind of reducing epitaxial wafer warpage
LED growing method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting, due to LED have it is small in size,
The low long service life high brightness of power consumption, environmental protection, it is sturdy and durable the advantages that by the majority of consumers approve, domestic production LED's
Scale is also gradually expanding.
Sapphire is the most common substrate material of industrial production GaN base LED at this stage.Epitaxial growth skill traditional at present
Epitaxial wafer warpage is big in art, and especially when carrying out epitaxial crystal growth on large-size sapphire substrate, warpage is bigger, causes subsequent
Fragment rate height is ground in chip fabrication processes, product yield is low.
Therefore it provides a kind of LED epitaxial growth method, reduces epitaxial wafer warpage, is the art skill urgently to be resolved
Art problem.
Summary of the invention
In view of this, the technical problem to be solved by the application is to provide a kind of LED growths for reducing epitaxial wafer warpage
Method, the 2 one-step growth methods that InGaN material is then grown using preferred growth AlN replace original low temperature GaN 3D 2D3 one-step growth
Technology reduces epitaxial wafer warpage by using new material new process.
In order to solve the above-mentioned technical problem, the application has following technical solution:
A kind of LED growing method reducing epitaxial wafer warpage successively includes: the N-type GaN for handling substrate, growth doping Si
Layer, cyclical growth active layer, growing P-type AlGaN layer, the p-type GaN layer of growth doping Mg, cooling down, which is characterized in that
The processing substrate, further are as follows:
Sapphire substrate temperature is heated to 500 DEG C using DC magnetron reactive sputtering equipment, is passed through 80sccm-90sccm
Ar, 110sccm-140sccm N2And O2, splashed on sapphire substrate surface with the bias of 2000V-3000V impact aluminium target
Penetrate the A1N film of 15nm-25nm thickness, wherein during growing the A1N film, O2Flow first with increase per second
From 0sccm, gradually gradual change increases to 150sccm to 1sccm, then from 150sccm, gradually gradual change is reduced to reduction 0.4sccm per second
70sccm, last O2Flow maintain 70sccm remain unchanged until the A1N film growth terminate；
The Sapphire Substrate for having sputtered A1N film is put into MOCVD reaction chamber, temperature is increased to 700 DEG C -950 DEG C, reacts
Cavity pressure maintains 200mbar-280mbar, is passed through the H of 70L/min-80L/min2, 50L/min-70L/min NH3、
The source TMGa of 800sccm-900sccm, 1000sccm-1500sccm TMIn, the In of continued propagation 60nm-90nmxGa(1-x)N
Layer, x=0-0.15；
The N-type GaN layer of the growth doping Si, further are as follows:
1000 DEG C -1100 DEG C are increased the temperature to, reaction cavity pressure maintains 150mbar-300mbar, is passed through 50L/min-
The H of 90L/min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm SiH4
Source, N-type GaN, the Si doping concentration that continued propagation adulterates Si is 5E18atoms/cm3-1E19atoms/cm3, overall thickness, which controls, to exist
2μm-4μm；
The cyclical growth active layer, further are as follows:
Reaction cavity pressure maintains 300mbar-400mbar, and temperature is controlled at 700 DEG C -750 DEG C, is passed through 50L/min-
The N of 90L/min2, 40L/min-60L/min NH3, the source TMGa of 10sccm-50sccm, 1000sccm-2000sccm TMIn
Source, the In with a thickness of 3nm-4nm of growth doping InxGa(1-x)N layers, x=0.15-0.25, In doping concentration is 1E20atoms/
cm3-3E20atoms/cm3；
Temperature is increased to 800 DEG C -850 DEG C, is passed through the N of 50L/min-90L/min2, 40L/min-60L/min NH3、
The source TMGa of 10sccm-50sccm, growth thickness are the GaN layer of 10nm-15nm；
Alternating growth InxGa(1-x)N layers and GaN layer, periodicity 10-15.
Preferably, in which:
The model iTopA230 of the DC magnetron reactive sputtering equipment.
Preferably, in which:
The growing P-type AlGaN layer, further are as follows:
850 DEG C -950 DEG C are increased the temperature to, reaction cavity pressure maintains 200mbar-400mbar, is passed through 50L/min-
The N of 90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, the P of continued propagation 50nm-100nm
Type AlGaN layer, Al doping concentration are 1E20 atoms/cm3-3E20atoms/cm3, Mg doping concentration is 5E18atoms/cm3-
1E19atoms/cm3。
Preferably, in which:
It is described to grow the p-type GaN layer for mixing Mg, further are as follows:
950 DEG C -1000 DEG C are increased the temperature to, reaction cavity pressure maintains 200mbar-600mbar, and being passed through flow is 50L/
The N of min-90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm TMGa, continued propagation 100nm-300nm
The p-type GaN layer for mixing Mg, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
Preferably, in which:
The cooling down, further are as follows: be cooled to 700 DEG C -800 DEG C, be individually passed through 100L/min-150L/min's
N2, keep the temperature 20min-30min, furnace cooling
Compared with prior art, method described herein achieving the following effects:
The present invention is reduced in the LED growing method of epitaxial wafer warpage, with new AlN, InxGa(1-x)N material replaces original
Low temperature GaN, 2DGaN, 3DGaN material obtains a kind of new material and growth technique, during control A1N film
O2The regular gradual change of flow is conducive to eliminate Sapphire Substrate to the cumulative stress effect of GaN film, significantly increases extension
The window of membrane material Stress Control is conducive to the qualification rate for improving GaN epitaxy piece, reduces so as to reduce epitaxial wafer warpage
Fragment rate.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of LED epitaxial layer in Example 1 and Example 2 of the present invention；
Fig. 2 is the structural schematic diagram of LED epitaxial layer in background technique and comparative example 1；
Wherein, 1, high temperature p-type GaN, 2, p-type AlGaN, 3, GaN, 4, InGaN, 5, adulterate Si N-type GaN layer, 6,
InxGa(1-x)N, 7, A1N layers, 8, substrate, 9, low temperature buffer layer GaN, 10,3DGaN, 11,2DGaN, 34, active layer.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in
Technical problem basically reaches the technical effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described
Description is being not intended to limit the scope of the present application for the purpose of the rule for illustrating the application.The protection scope of the application
As defined by the appended claims.
Embodiment 1
The present invention grows high brightness GaN-based LED epitaxial wafer with MOCVD.Using high-purity H2Or high-purity N2Or high-purity H2With
High-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, metal organic source trimethyl gallium (TMGa), trimethyl indium
(TMIn) it is used as indium source, N type dopant is silane (SiH4), and trimethyl aluminium (TMAl) is used as silicon source, and P-type dopant is two luxuriant magnesium
(CP2Mg), substrate is (0001) surface sapphire, and reaction pressure is between 100mbar to 800mbar.Specific growth pattern is as follows
(epitaxial structure please refers to Fig. 1):
The present invention provides a kind of LED growing method for improving epitaxial crystal quality, the N-type of processing substrate 8, growth doping Si
GaN layer 5, cyclical growth active layer 34, growing P-type AlGaN layer 2, the p-type GaN layer 1 of growth doping Mg, cooling down, especially
Ground:
Above-mentioned processing substrate 8 is further are as follows:
8 temperature of Sapphire Substrate is heated to 500 DEG C using DC magnetron reactive sputtering equipment, is passed through 80sccm-
The N of Ar, 110sccm-140sccm of 90sccm2And O2, with the bias impact aluminium target of 2000V-3000V in Sapphire Substrate table
The A1N film 7 of 15nm-25nm thickness is sputtered on face, wherein during growing A1N film 7, O2Flow first with every
Second increasing 1sccm, gradually gradual change increases to 150sccm from 0sccm, then with reduction 0.4sccm per second from 150sccm gradually gradual change
It is reduced to 70sccm, last O2Flow maintain 70sccm remain unchanged until the A1N film 7 growth terminate；
The Sapphire Substrate 8 for having sputtered A1N film 7 is put into MOCVD reaction chamber, increases temperature to 700 DEG C -950 DEG C, instead
It answers cavity pressure to maintain 200mbar-280mbar, is passed through the H of 70L/min-80L/min2, 50L/min-70L/min NH3、
The source TMGa of 800sccm-900sccm, 1000sccm-1500sccm TMIn, the In of continued propagation 60nm-90nmxGa(1-x)N
Layer 6, x=0-0.15；
The present invention new AlN, InxGa(1-x)N material replaces original low temperature GaN, 2DGaN, 3DGaN material, obtains one
Kind new material and growth technique, by control A1N film during O2The regular gradual change of flow is conducive to eliminate blue
Jewel substrate significantly increases the window of epitaxial film material stress control, to the cumulative stress effect of GaN film so as to subtract
Few epitaxial wafer warpage is conducive to the qualification rate for improving GaN epitaxy piece, reduces fragment rate.
Embodiment 2
The present embodiment grows high brightness GaN-based LED epitaxial wafer with MOCVD.Using high-purity H2Or high-purity N2Or high-purity H2
And high-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, metal organic source trimethyl gallium (TMGa), trimethyl indium
(TMIn) it is used as indium source, N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is two luxuriant magnesium as silicon source P-type dopant
(CP2Mg), substrate is (0001) surface sapphire, and reaction pressure is between 700mbar to 800mbar.Specific growth pattern is as follows
(epitaxial structure please refers to Fig. 1):
1, using model iTopA230 DC magnetron reactive sputtering equipment by sapphire Al2O38 temperature of substrate is heated to
500 DEG C, it is passed through the N of Ar, 110sccm-140sccm of 80sccm-90sccm2And O2, impacted with the bias of 2000V-3000V
Aluminium target sputters the A1N film 7 of 15nm-25nm thickness on sapphire substrate surface, wherein in the process for growing the A1N film 7
In, O2Flow first with increase 1sccm per second, from 0sccm, gradually gradual change increases to 150sccm, then with reduction 0.4sccm per second
From 150sccm, gradually gradual change is reduced to 70sccm, last O2Flow maintain 70sccm and remain unchanged until the A1N film
7 growths terminate.
2, the Sapphire Substrate for having sputtered A1N film 7 is put into MOCVD reaction chamber, increases temperature to 700 DEG C -950 DEG C,
Reaction cavity pressure maintains 200mbar-280mbar, is passed through the H of 70L/min-80L/min2, 50L/min-70L/min NH3、
The source TMGa of 800sccm-900sccm, 1000sccm-1500sccm TMIn, the In of continued propagation 60nm-90nmxGa(1-x)N
Layer 6, x=0-0.15.
3,1000 DEG C -1100 DEG C are increased the temperature to, reaction cavity pressure maintains 150mbar-300mbar, is passed through 50L/
The H of min-90L/min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm
SiH4Source, continued propagation adulterate the N-type GaN layer 5 of Si, and Si doping concentration is 5E18atoms/cm3-1E19atoms/cm3, total thickness
Degree control is at 2 μm -4 μm.
4, cyclical growth active layer 34, reaction cavity pressure maintain 300mbar-400mbar, temperature control 700 DEG C-
750 DEG C, it is passed through the N of 50L/min-90L/min2, 40L/min-60L/min NH3, 10sccm-50sccm the source TMGa,
The source TMIn of 1000sccm-2000sccm, the In with a thickness of 3nm-4nm of growth doping InxGa(1-x)N layer 4, x=0.15-
0.25, In doping concentration is 1E20 atoms/cm3-3E20atoms/cm3；Temperature is increased to 800 DEG C -850 DEG C, is passed through 50L/
The N of min-90L/min2, 40L/min-60L/min NH3, 10sccm-50sccm the source TMGa, growth thickness 10nm-15nm
GaN layer 3；Alternating growth InxGa(1-x)N layer 4 and GaN layer 3, periodicity 10-15.
5,850 DEG C -950 DEG C are increased the temperature to, reaction cavity pressure maintains 200mbar-400mbar, is passed through 50L/min-
The N of 90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, the P of continued propagation 50nm-100nm
Type AlGaN layer 2, Al doping concentration are 1E20 atoms/cm3-3E20atoms/cm3, Mg doping concentration is 5E18atoms/cm3-
1E19atoms/cm3。
6,950 DEG C -1000 DEG C are increased the temperature to again, and reaction cavity pressure maintains 200mbar-600mbar, and being passed through flow is
The N of 50L/min-90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm TMGa, continued propagation 100nm-
The p-type GaN layer 1 for mixing Mg of 300nm, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
7,700 DEG C -800 DEG C are finally cooled to, the N of 100L/min-150L/min is individually passed through2, keep the temperature 20min-
30min, furnace cooling.
This uses new AlN, InxGa(1-x)N material replaces original low temperature GaN, 2DGaN, 3DGaN material, obtains one kind
New material and growth technique, by control A1N film during O2The regular gradual change of flow is conducive to eliminate blue treasured
Stone lining bottom significantly increases the window of epitaxial film material stress control, to the cumulative stress effect of GaN film so as to reduce
Epitaxial wafer warpage is conducive to the qualification rate for improving GaN epitaxy piece, reduces fragment rate.
Embodiment 3
Comparative example 1 presented below, the i.e. growing method of tradition LED epitaxial layer.
The growing method of traditional LED epitaxial layer is (epitaxial layer structure is referring to fig. 2):
1, in 900 DEG C -1100 DEG C of H2Under atmosphere, it is passed through the H of 50L/min-100L/min2, keep reaction cavity pressure
100mbar-200mbar, high-temperature process Sapphire Substrate 5min-10min.
2, it is cooled at 500-650 DEG C, keeps reaction cavity pressure 300mbar-600mbar, be passed through 50L/min-90L/min
H2, 40L/min-60L/min NH3, the source TMGa of 50sccm-100sccm, on a sapphire substrate growth thickness be 30nm-
The low temperature buffer layer GaN of 60nm.
3,850 DEG C -1000 DEG C are increased the temperature to, reaction cavity pressure 300mbar-600mbar is kept, being passed through flow is 50L/
The H of min-90L/min2, 40L/min-60L/min NH3, 200sccm-300sccm the source TMGa, 2 μm -3 μm of continued propagation
3DGaN layers.
4,1000 DEG C -1100 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is
The H of 50L/min-90L/min2, 40L/min-60L/min NH3, 300sccm-400sccm the source TMGa, 2 μm -3 of continued propagation
μm 2DGaN layer.
5,1000 DEG C -1100 DEG C of temperature are kept, reaction cavity pressure maintains 150mbar-300mbar, is passed through 50L/min-
The H of 90L/min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm SiH4
Source, N-type GaN, the Si doping concentration that continued propagation adulterates Si is 5E18atoms/cm3-1E19atoms/cm3(5E18 represents 5
18 powers, that is, 518, 1E19 represents 1019, following presentation mode and so on), overall thickness is controlled at 2 μm -4 μm.
6, cyclical growth active layer MQW:
Reaction cavity pressure maintains 300mbar-400mbar, and temperature is controlled at 700 DEG C -750 DEG C, is passed through 50L/min-
The N of 90L/min2, 40L/min-60L/min NH3, the source TMGa of 10sccm-50sccm, 1000sccm-2000sccm TMIn
Source, the In with a thickness of 3nm-4nm of growth doping InxGa(1-x)N layers, x=0.15-0.25, In doping concentration is 1E20atoms/
cm3-3E20atoms/cm3；
Temperature is increased to 800 DEG C -850 DEG C, is passed through the N of 50L/min-90L/min2, 40L/min-60L/min NH3、
The source TMGa of 10sccm-50sccm, growth thickness are the GaN layer of 10nm-15nm；
Alternating growth InxGa(1-x)N layers and GaN layer, periodicity 10-15.
7,850 DEG C -950 DEG C are increased the temperature to again, and reaction cavity pressure maintains 200mbar-400mbar, is passed through 50L/
The N of min-90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, continued propagation 50nm-100nm
P-type AlGaN layer, Al doping concentration be 1E20 atoms/cm3-3E20atoms/cm3, Mg doping concentration is 5E18atoms/
cm3-1E19atoms/cm3。
8,950 DEG C -1000 DEG C are increased the temperature to again, and reaction cavity pressure maintains 200mbar-600mbar, and being passed through flow is
The N of 50L/min-90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm TMGa, continued propagation 100nm-
The p-type GaN layer for mixing Mg of 300nm, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
9,700 DEG C -800 DEG C are finally cooled to, the N of 100L/min-150L/min is individually passed through2, keep the temperature 20min-
30min, furnace cooling.
1000 samples 1 are prepared according to the LED epitaxial growth method in existing traditional technology, the side described according to this patent
Method prepares 1000 samples 2.Any selected sample 1 and 2 each 8, sample, test the angularity of epitaxial wafer at identical conditions
BOW value, refers to table 1, and table 1 show 2 epitaxial wafer angularity test data of sample 1 and sample.
2 epitaxial wafer angularity data of 1 sample 1 of table and sample
By table 1, it can be concluded that, the angularity of the epitaxial wafer of LED epitaxial growth method preparation provided by the invention obviously becomes
It is small.In addition, carrying out statistics discovery, 1 fragmentation of sample 36, sample to the grinding fragmentation situation of 1000 sample 1 and 1000 piece samples 2
2 fragmentation of product 17, i.e. 1 fragment rate of sample are 3.6%, and the fragment rate of sample 2 is 1.7%, is illustrated outside LED provided by the invention
Epitaxial wafer angularity can be significantly reduced by prolonging growing method, and fragment rate is effectively reduced, and improve product yield.
As can be seen from the above embodiments beneficial effect existing for the application is:
The present invention uses new AlN, InxGa(1-x)N material replaces original low temperature GaN, 2DGaN, 3DGaN material, obtains
A kind of new material and growth technique, by control A1N film during O2The regular gradual change of flow, is conducive to eliminate
Sapphire Substrate significantly increases the window of epitaxial film material stress control to the cumulative stress effect of GaN film, so as to
Epitaxial wafer warpage is reduced, is conducive to the qualification rate for improving GaN epitaxy piece, reduces fragment rate.
It should be understood by those skilled in the art that, embodiments herein can provide as method, apparatus or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through within that scope of the inventive concept describe herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (5)
1. it is a kind of reduce epitaxial wafer warpage LED growing method, successively include: handle substrate, growth doping Si N-type GaN layer,
Cyclical growth active layer, growing P-type AlGaN layer, the p-type GaN layer of growth doping Mg, cooling down, which is characterized in that
The processing substrate, further are as follows:
Sapphire substrate temperature is heated to 500 DEG C using DC magnetron reactive sputtering equipment, is passed through 80sccm-90sccm's
The N of Ar, 110sccm-140sccm2And O2, sputtered on sapphire substrate surface with the bias of 2000V-3000V impact aluminium target
The A1N film of 15nm-25nm thickness, wherein during growing the A1N film, O2Flow first with increase 1sccm per second
From 0sccm, gradually gradual change increases to 150sccm, then from 150sccm, gradually gradual change is reduced to reduction 0.4sccm per second
70sccm, last O2Flow maintain 70sccm remain unchanged until the A1N film growth terminate；
The Sapphire Substrate for having sputtered A1N film is put into MOCVD reaction chamber, increases temperature to 700 DEG C -950 DEG C, reaction chamber pressure
Power maintains 200mbar-280mbar, is passed through the H of 70L/min-80L/min2, 50L/min-70L/min NH3、800sccm-
The source TMGa of 900sccm, 1000sccm-1500sccm TMIn, the In of continued propagation 60nm-90nmxGa(1-x)N layers, x=0-
0.15；
The N-type GaN layer of the growth doping Si, further are as follows:
1000 DEG C -1100 DEG C are increased the temperature to, reaction cavity pressure maintains 150mbar-300mbar, is passed through 50L/min-90L/
The H of min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm SiH4Source is held
N-type GaN, the Si doping concentration of continuous growth doping Si is 5E18atoms/cm3-1E19atoms/cm3, overall thickness control is at 2 μm -4
μm；
The cyclical growth active layer, further are as follows:
Reaction cavity pressure maintains 300mbar-400mbar, and temperature is controlled at 700 DEG C -750 DEG C, is passed through 50L/min-90L/min
N2, 40L/min-60L/min NH3, the source TMGa of 10sccm-50sccm, 1000sccm-2000sccm the source TMIn, growth
Adulterate the In with a thickness of 3nm-4nm of InxGa(1-x)N layers, x=0.15-0.25, In doping concentration is 1E20atoms/cm3-
3E20atoms/cm3；
Temperature is increased to 800 DEG C -850 DEG C, is passed through the N of 50L/min-90L/min2, 40L/min-60L/min NH3、10sccm-
The source TMGa of 50sccm, growth thickness are the GaN layer of 10nm-15nm；
Alternating growth InxGa(1-x)N layers and GaN layer, periodicity 10-15.
2. reducing the LED growing method of epitaxial wafer warpage according to claim 1, which is characterized in that
The model iTop A230 of the DC magnetron reactive sputtering equipment.
3. reducing the LED growing method of epitaxial wafer warpage according to claim 1, which is characterized in that
The growing P-type AlGaN layer, further are as follows:
850 DEG C -950 DEG C are increased the temperature to, reaction cavity pressure maintains 200mbar-400mbar, is passed through 50L/min-90L/min
N2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, the p-type AlGaN of continued propagation 50nm-100nm
Layer, Al doping concentration are 1E20atoms/cm3-3E20atoms/cm3, Mg doping concentration is 5E18atoms/cm3-
1E19atoms/cm3。
4. reducing the LED growing method of epitaxial wafer warpage according to claim 1, which is characterized in that
It is described to grow the p-type GaN layer for mixing Mg, further are as follows:
950 DEG C -1000 DEG C are increased the temperature to, reaction cavity pressure maintains 200mbar-600mbar, and being passed through flow is 50L/min-
The N of 90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm TMGa, continued propagation 100nm-300nm's mixes
The p-type GaN layer of Mg, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
5. any LED growing method for reducing epitaxial wafer warpage according to claim 1~4, which is characterized in that
The cooling down, further are as follows: be cooled to 700 DEG C -800 DEG C, be individually passed through the N of 100L/min-150L/min2, heat preservation
20min-30min, furnace cooling.
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| CN106409996A (en) * | 2016-11-08 | 2017-02-15 | 湘能华磊光电股份有限公司 | Epitaxial growth method capable of improving LED chip property uniformity |
| CN108847434A (en) * | 2018-06-27 | 2018-11-20 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method reducing epitaxial wafer warpage |
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| CN108847434A (en) * | 2018-06-27 | 2018-11-20 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method reducing epitaxial wafer warpage |
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| CN115125619A (en) * | 2022-07-12 | 2022-09-30 | 季华实验室 | Epitaxial wafer cooling system and method, electronic device and storage medium |
| CN115125619B (en) * | 2022-07-12 | 2023-07-04 | 季华实验室 | Cooling system and method for epitaxial wafer, electronic equipment and storage medium |
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