CN110010657A - Organic light emitting diode display - Google Patents
Organic light emitting diode display Download PDFInfo
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- CN110010657A CN110010657A CN201811561489.4A CN201811561489A CN110010657A CN 110010657 A CN110010657 A CN 110010657A CN 201811561489 A CN201811561489 A CN 201811561489A CN 110010657 A CN110010657 A CN 110010657A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K50/844—Encapsulations
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
Abstract
Disclose a kind of organic light emitting diode display.The organic light emitting diode display includes: substrate, the substrate includes thin film transistor region and auxiliary electrode area, thin film transistor (TFT) is provided in the thin film transistor region and is connected to the Organic Light Emitting Diode of the thin film transistor (TFT), and auxiliary electrode is provided in the auxiliary electrode area；Barrier, the barrier are arranged on the auxiliary electrode；Cathode, the cathode are included in the Organic Light Emitting Diode, are divided by the barrier, and the exposure auxiliary electrode is at least partly, and the end of the cathode is directly contacted with the auxiliary electrode；And cap rock, on the cathode, the cap rock has continuity to cover the barrier and the auxiliary electrode for the cap rock setting.
Description
Technical field
This disclosure relates to organic light emitting diode display.
Background technique
Various display devices are instead of heavier and biggish cathode-ray tube (CRT).The example of display device can be with
Including liquid crystal display (LCD), Field Emission Display (FED), Plasmia indicating panel (PDP) and Organic Light Emitting Diode
(OLED) display.
In more detail, OLED display is spontaneous emission display, is configured as shining by excitation organic compound.
OLED display does not need back light unit used in liquid crystal display and to have low profile, light weight and simpler
The advantages of manufacturing process of list.OLED display can also be manufactured at a lower temperature, and have 1ms or less quick
Response time, low-power consumption, wide viewing angle and high contrast.To which OLED display has been used widely.
OLED display includes the Organic Light Emitting Diode (OLED) for converting electrical energy into luminous energy.OLED includes anode, yin
Organic compound layer between pole and anode and cathode.OLED display is configured such that, by inciting somebody to action in emission layer
When hole from anode and the electronic combination from cathode and the exciton formed fall into ground state from excited state, OLED shines,
And to show image.
However, large-area OLEDs display cannot remain equal throughout the whole surface for the active area for showing input picture thereon
Even brightness, and depend on position and generate brightness change (or luminance deviation).More specifically, organic light-emitting diodes will be constituted
The cathode of pipe is formed as covering the major part of active area, and there is the supply voltage for being applied to cathode throughout the entire of active area
Surface does not have the problem of constant voltage values.For example, with the cathode for being supplied with supply voltage inlet voltage value with from
It opens difference between the voltage value at the position of entrance to increase due to the resistance of cathode, the brightness change depending on position increases
Greatly.
The problem is more problematic in top emission type display device.That is, in top emission type display device, because must
The transmissivity that must ensure the cathode positioned at the upper layer of Organic Light Emitting Diode, so cathode is by the saturating of such as tin indium oxide (ITO)
Bright conductive material is formed, or is formed by the opaque conductive material with very small thickness.In the case, because of cathode
Sheet resistance increases, so corresponding to the increase of sheet resistance, the brightness change depending on position is significantly increased.
Summary of the invention
It can be realized by minimizing the variation of the low potential power source voltage depending on position present disclose provides a kind of
The organic light emitting diode display of uniform luminance.
On the one hand, a kind of organic light emitting diode display is provided, the organic light emitting diode display includes:
Substrate, the substrate include thin film transistor region and auxiliary electrode area, and film crystal is provided in the thin film transistor region
The Organic Light Emitting Diode for managing and being connected to the thin film transistor (TFT) is provided with auxiliary electrode in the auxiliary electrode area；Screen
Hinder (barrier), the barrier is arranged on the auxiliary electrode；Cathode, the cathode are included in the organic light-emitting diodes
Guan Zhong is divided by the barrier, and the exposure auxiliary electrode is at least partly, the end of the cathode and auxiliary electricity
Extremely directly contact；And cap rock, on the cathode, the cap rock has continuity to cover the barrier for the cap rock setting
With the auxiliary electrode.
The organic light emitting diode display also includes the protective layer between the cathode and the cap rock.It is described
Protective layer is divided by the barrier and exposes the auxiliary electrode at least partly.
The organic light emitting diode display also includes power supply line, and the power supply line is set under the auxiliary electrode
And receive the supply voltage from power supply generating portion, at least one insulating layer between the power supply line and the auxiliary electrode it
Between.The auxiliary electrode is electrically connected to the power supply line via the contact hole for passing through at least one insulating layer.
The organic compound layer of the Organic Light Emitting Diode is divided by the barrier and exposes the auxiliary electrode
At least partly.The end of the cathode on the organic compound layer extends than the end of the organic compound layer
More and directly contact the auxiliary electrode.
The cap rock is by aluminium oxide (Al2O3) and silicon nitride (SiNx) in select any formation.
The thickness of the cap rock is set to be less than the thickness of the protective layer.
The cap rock is covered on the open area generated when the protective layer is divided by the barrier.
On the other hand, a kind of organic light emitting diode display, the organic light emitting diode display packet are provided
Contain: substrate, the substrate include thin film transistor region and auxiliary electrode area, and it is brilliant that film is provided in the thin film transistor region
Body pipe and the Organic Light Emitting Diode for being connected to the thin film transistor (TFT) are provided with auxiliary electrode in the auxiliary electrode area；
Passivation layer, the passivation layer are arranged on the auxiliary electrode and expose the auxiliary electrode at least partly；Dummy pattern,
The dummy pattern is arranged on the passivation layer, and the dummy pattern includes protruding, the protrusion with the auxiliary electrode
It is more prominent than the passivation layer more in the region of overlapping；Cathode, the cathode are included in the Organic Light Emitting Diode, by institute
Prominent division is stated, and the exposure auxiliary electrode is at least partly, the end of the cathode directly connects with the auxiliary electrode
Touching；And cap rock, on the cathode, the cap rock has continuity to cover the protrusion and described auxiliary for cap rock setting
Help electrode.
Detailed description of the invention
It can be included to provide the portion being further understood from and be incorporated and constitute this application documents to the disclosure
Point attached drawing example embodiment of the disclosure, and together with specification be used to explain the various principles of the disclosure.
Fig. 1 is the frame of schematically example Organic Light Emitting Diode according to an embodiment of the present disclosure (OLED) display
Figure；
Fig. 2 schematically illustrates the configuration of pixel shown in Fig. 1；
Fig. 3 be schematically example according to the cross of the thin film transistor region of the OLED display of first embodiment of the present disclosure
Section view；
Fig. 4 be schematically example according to the transversal of the auxiliary electrode area of the OLED display of first embodiment of the present disclosure
Face view；
Fig. 5 be schematically example according to the viewgraph of cross-section of the thin film transistor region of first embodiment of the present disclosure；
Fig. 6 be schematically example according to the viewgraph of cross-section in the auxiliary electrode area of first embodiment of the present disclosure；
Fig. 7 illustrates Step Coverage (step coverage) characteristic of atomic layer deposition (ALD) technique；
Fig. 8 is the viewgraph of cross-section of the schematically example of the shape of example barrier (barrier)；
Fig. 9 be schematically example according to the viewgraph of cross-section of the thin film transistor region of second embodiment of the present disclosure；
Figure 10 be schematically example according to the viewgraph of cross-section in the auxiliary electrode area of second embodiment of the present disclosure；
Figure 11 A and Figure 11 B, which are sequentially illustrated, is used to form method outstanding.
Specific embodiment
It reference will now be made in detail to embodiment of the disclosure now, example is in attached drawing.It, will be all over when any possible
And figure refers to the same or similar part using identical reference number.If it is known that the detailed description of technology can mislead this public affairs
The embodiment opened will omit the detailed description to the known technology.It, can be in the first embodiment in describing various embodiments
Identical component described, and can the descriptions thereof are omitted in other embodiments.
Term " first ", " second " etc. can be used for describing various parts, but component is not only restricted to the term.Term is only
For a component to be distinguished with other components.
Fig. 1 is the frame of schematically example Organic Light Emitting Diode according to an embodiment of the present disclosure (OLED) display
Figure.Fig. 2 schematically illustrates the configuration of pixel shown in Fig. 1.
Referring to Fig.1, OLED display 10 according to an embodiment of the present disclosure includes display driver circuit and display panel
DIS。
Display driver circuit includes data drive circuit 12, gate driving circuit 14 and timing controller 16.Display is driven
The video data voltage of input picture is applied to the pixel of display panel DIS by dynamic circuit.Data drive circuit 12 will be from timing
The received digital video data RGB of controller 16 is converted to simulation gamma (gamma) offset voltage and generates data voltage.From number
Data line D1 to Dm is provided to according to the data voltage that driving circuit 12 exports, wherein m is positive integer.Gate driving circuit 14
The grid signal synchronous with data voltage is sequentially supplied to gate lines G 1 to Gn, and selects to be applied the aobvious of data voltage
Show the pixel of panel DIS, wherein n is positive integer.
Timing controller 16 receives such as vertical synchronizing signal Vsync from host system 19, horizontal synchronizing signal
The timing signal of Hsync, data enable signal DE and master clock MCLK, and by the operation timing of data drive circuit 12 with
The operation timing of gate driving circuit 14 is synchronous.Data timing control signal for controlling data drive circuit 12 includes that source is adopted
Sample clock SSC, source output enable signal SOE etc..Grid timing controling signal for control gate drive circuit 14 includes grid
Pole starts pulse GSP, gate shift clock GSC, grid output enable signal GOE etc..
Host system 19 can be following one: television system, set-top box, navigation system, DVD player, blue light play
Device, PC (PC), household audio and video system, telephone system and other systems including display or combination display operation
System.Host system 19 includes wherein being embedded with the system on chip (SoC) of scaler (scaler), and the number of input picture is regarded
Frequency is converted to the format for being suitable for that input picture is shown on display panel DIS according to RGB.Host system 9 is by timing signal
The digital video data RGB of Vsync, Hsync, DE and MCLK and input picture is sent to timing controller 16.
Display panel DIS includes pixel array.Pixel array includes being limited by data line D1 to Dm and gate lines G 1 to Gn
Pixel.Each pixel includes the Organic Light Emitting Diode as self-emissive element.
Referring to Fig. 2, display panel DIS includes multiple data line D, the multiple gate lines Gs intersected with data line D, Yi Jifen
Not in data line D and the infall of gate lines G at the pixel of matrix arrangements.Each pixel includes Organic Light Emitting Diode, uses
Driving thin film transistor (TFT) (TFT) DT of the amount of the electric current of Organic Light Emitting Diode is flowed through in control and is driven for setting thin
The programming unit SC of the grid-source voltage of film transistor DT.
Programming unit SC may include at least one switching thin-film transistor and at least one reservior capacitor.Switch film
Transistor is connected in response to the grid signal from gate lines G, and the data voltage from data line D is thus applied to storage
One electrode of capacitor.Driving thin film transistor (TFT) DT depends on the amplitude for the voltage being stored in reservior capacitor and controls confession
The amount of the light of Organic Light Emitting Diode transmitting should be thus controlled to the amount of the electric current of Organic Light Emitting Diode.Organic light-emitting diodes
The amount of the light of pipe transmitting is proportional to the amount of electric current supplied from driving thin film transistor (TFT) DT.Pixel is connected to high potential power electricity
Potential source and low potential power source voltage source, and high potential power voltage EVDD and low electricity are received from power supply generating portion (not shown)
Position supply voltage EVSS.The thin film transistor (TFT) for constituting pixel can be p-type thin film transistor or n-type thin film transistor.In addition, structure
The semiconductor layer of the thin film transistor (TFT) of pixel may include amorphous silicon, polysilicon or oxide.In the following description, this public affairs
The embodiment opened uses the semiconductor layer including oxide as example.Organic Light Emitting Diode include anode A NO, cathode CAT,
And the organic compound layer between anode A NO and cathode CAT.Anode A NO is connected to driving thin film transistor (TFT) DT.
<first embodiment>
Fig. 3 be schematically example according to the cross of the thin film transistor region of the OLED display of first embodiment of the present disclosure
Section view.Fig. 4 be schematically example according to the cross in the auxiliary electrode area of the OLED display of first embodiment of the present disclosure
Section view.
Referring to Fig. 3 and 4, the OLED display according to first embodiment of the present disclosure includes display panel, the display panel
Including first substrate SUB1 and the second substrate SUB2 facing with each other.Filled layer FL can be between first substrate SUB1 and the second base
Between plate SUB2.
First substrate SUB1 is thin-film transistor array base-plate, and thin film transistor (TFT) T and Organic Light Emitting Diode OLE are set to
On the thin-film transistor array base-plate.The second substrate SUB2 is color filter array substrate, and colour filter CF is set to the colour filter battle array
On column substrate.The second substrate SUB2 may be used as package substrate.Sealant SL can be used by first substrate SUB1 and the second base
Plate SUB2 is attached to each other.Sealant SL is arranged in the edge of first substrate SUB1 and the edge of the second substrate SUB2, and
Preset distance is maintained between first substrate SUB1 and the second substrate SUB2.(or receiving) can be set in sealant SL in filled layer FL
It is interior.
First substrate SUB1 can be made of glass material or plastic material.For example, first substrate SUB1 can be by such as
Polyimides (PI), polyethylene terephthalate (polyethylene terephthalate, PET), poly- naphthalenedicarboxylic acid
The plastics material of second diester (, polyethylene naphthalate, PEN) and polycarbonate (polycarbonate, PC)
Material is made, and can have flexible characteristic.
First substrate SUB1 can be divided into thin film transistor region TA and auxiliary electrode area AEA, thin film transistor (TFT) T and have
Machine light emitting diode OLE is arranged in the TA of thin film transistor region, and auxiliary electrode AE is provided in auxiliary electrode area AEA.
Thin film transistor (TFT) T and the Organic Light Emitting Diode OLE for being connected to thin film transistor (TFT) T are formed in first substrate SUB1's
On the TA of thin film transistor region.Light shielding layer LS and buffer layer BUF can be formed in first substrate SUB1 and thin film transistor (TFT) T it
Between.Light shielding layer LS is arranged to and semiconductor layer, especially the channel of thin film transistor (TFT) T, overlapping, and can protect oxidation
Object semiconductor element is from exterior light.Buffer layer BUF can stop the ion or impurity spread from first substrate SUB1, and also
Stop from external moisture infiltration.
Thin film transistor (TFT) T includes semiconductor layer ACT, gate electrode GE, source electrode SE and drain electrode DE.
Gate insulating layer GI and gate electrode GE is arranged on semiconductor layer ACT.Gate insulating layer GI is used for isolated gate
Electrode GE and can be by Si oxide (SiOx) formed.However, embodiment is without being limited thereto.Gate electrode GE is arranged to and half
Conductor layer ACT overlapping, gate insulating layer GI is between gate electrode GE and semiconductor layer ACT.Copper (Cu), molybdenum can be used
(Mo), aluminium (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), tantalum (Ta), tungsten (W), or combinations thereof are electric by grid
Pole GE is formed as single-layer or multi-layer.Identical exposure mask can be used to be patterned gate insulating layer GI and gate electrode GE.?
In this case, gate insulating layer GI and the region having the same gate electrode GE.Although it is not shown, can be by gate insulator
Layer GI is formed as covering the whole surface of first substrate SUB1.
Interlevel dielectric layer IN is located on gate electrode GE.Interlevel dielectric layer IN be used for gate electrode GE and source electrode and
Drain electrode SE and DE are isolated from each other.Interlevel dielectric layer IN can be by Si oxide (SiOx), silicon nitride (SiNx) or its
Multilayer is formed.However, embodiment is without being limited thereto.
Source electrode SE and drain electrode DE is located on interlevel dielectric layer IN.Source electrode SE and drain electrode DE are each other
Between separate preset distance.Source electrode SE is via the source contact openings contact semiconductor layer ACT's across interlevel dielectric layer IN
Side.Drain electrode DE contacts the other side of semiconductor layer ACT via the drain contact hole across interlevel dielectric layer IN.
Each of source electrode SE and drain electrode DE can be formed as into single-layer or multi-layer.When by source electrode SE
When being formed as single layer with each of drain electrode DE, each of source electrode SE and drain electrode DE can be by molybdenums
(Mo), aluminium (Al), chromium (Cr), golden (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu), or combinations thereof formed.When by source
It, can will be every in source electrode SE and drain electrode DE when each of pole electrode SE and drain electrode DE are formed as multilayer
One is formed as the bilayer of Mo/Al-Nd, Mo/Al, Ti/Al or Cu/MoTi, or be formed as Mo/Al-Nd/Mo, Mo/Al/Mo,
Three layers of Ti/Al/Ti or MoTi/Cu/MoTi.
Passivation layer PAS is located on thin film transistor (TFT) T.Passivation layer PAS protective film transistor T and can be by Si oxide
(SiOx), silicon nitride (SiNx) or its multilayer formed.
Complanation layer OC is located on passivation layer PAS.Complanation layer OC can reduce or planarize the difference in height of substructure
(or Step Coverage), and can by such as light acrylic, polyimides, based on the resin of benzocyclobutene
(benzocyclobutene-based resin) and resin (acrylate-based resin) based on acrylate
Organic material is formed.If required or expectation, can be omitted one of passivation layer PAS and complanation layer OC.
Organic Light Emitting Diode OLE and auxiliary electrode AE is located on complanation layer OC.It can be by Organic Light Emitting Diode OLE
It is provided in the TA of thin film transistor region, and auxiliary electrode AE can be provided in auxiliary electrode area AEA.Organic light-emitting diodes
Pipe OLE includes anode A NO, organic compound layer OL and cathode CAT.
More specifically, anode A NO is located on complanation layer OC.Anode A NO is via across passivation layer PAS and complanation layer OC
Contact hole be connected to the drain electrode DE of thin film transistor (TFT) T.Anode A NO may include reflecting layer and reflect electricity to be used as
Pole.Reflecting layer can be formed by aluminium (Al), copper (Cu), silver (Ag), palladium (Pd), nickel (Ni), or combinations thereof.For example, reflecting layer can
To be formed by Ag/Pd/Cu (APC) alloy.Anode A NO can be formed as include reflecting layer multilayer.
Auxiliary electrode AE is located on complanation layer OC.Auxiliary electrode AE may include low resistance conductive material.Such as below will
Description, auxiliary electrode AE can connect to cathode CAT and can be used for reducing the resistance of cathode CAT.Auxiliary electrode AE can
To be formed in layer identical with anode A NO by material identical with anode A NO.In the case, because need not execute for shape
At the independent technique of auxiliary electrode AE, so the quantity of technique can be reduced.Thus, it is possible to reduce manufacturing time and manufacture at
This, and finished product rate can be significantly improved.
Auxiliary electrode AE can be electrically connected to the low potential power source pressure-wire being arranged under auxiliary electrode AE (hereinafter referred to as
" Evss line ") EVL, at least one insulating layer is between auxiliary electrode AE and low potential power source pressure-wire EVL.Evss line EVL
Low potential power source voltage can be received from power supply generating portion (not shown) and low potential power source voltage is sent to auxiliary electrode
AE.Via the contact hole of at least one insulating layer across auxiliary electrode AE and Evss line EVL, auxiliary electrode AE and Evss
Line EVL can be connected to each other.
As shown in Figures 3 and 4, material identical with source electrode SE and drain electrode DE can be used by Evss line
EVL is formed on layer identical with source electrode SE and drain electrode DE, and Evss line EVL can be via across complanation layer
The auxiliary contacts hole AH of OC and passivation layer PAS is connected to auxiliary electrode AE.However, embodiment is without being limited thereto.It is, for example, possible to use
Evss line EVL is formed in and gate electrode GE or light shielding layer LS phase with gate electrode GE or light shielding layer LS identical material
On same layer.As another example, Evss line EVL can be provided as being set to multiple layers of different layers, at least one insulation
Layer is between multiple layer, and multiple layer can be connected to each other via the contact hole for passing through at least one insulating layer.
Evss line EVL includes low resistance conductive material.For example, Evss line EVL can by molybdenum (Mo), aluminium (Al), chromium (Cr),
Gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), or combinations thereof formed.
Dike layer BN is located on first substrate SUB1 and partitioning pixel, and anode A NO and auxiliary electrode AE are formed in the first base
On plate SUB1.Dike layer BN can be by the organic material of such as polyimides, the resin based on benzocyclobutene and acrylate
It is formed.
Dike layer BN includes most first opening of exposed anode A NO.Dike layer BN can be configured as exposed anode A NO
Central part and cover the edge of anode A NO.The part of the exposure of anode A NO can be designed to have face as big as possible
Product, to substantially ensure aperture ratio.Emitter region can be defined as by the central part of the anode A NO of dike layer BN exposure.
In addition, dike layer BN includes most second opening of exposed auxiliary electrode AE.Dike layer BN can be configured as cruelly
Reveal the central part of auxiliary electrode AE and covers the edge of auxiliary electrode AE.
Dike layer BN and complanation layer OC can be patterned with only cover in thin film transistor (TFT) T and pixel be connected to it is thin
The reservior capacitor Cst of film transistor T.As shown in Figures 3 and 4, reservior capacitor Cst, which can have, has wherein been laminated first
To the three-decker of third electrode for capacitors.However, embodiment is without being limited thereto.Such as, if it is desired, it can be by reservior capacitor
Cst is embodied as multiple layers.
Barrier BR is located on first substrate SUB1, and dike layer BN is formed on first substrate SUB1.Barrier BR is located at auxiliary
On electrode A E.Barrier BR is for physically dividing each of cathode CAT of formation and organic compound layer OL below.It changes
Sentence is talked about, and each of cathode CAT and organic compound layer OL are arranged on auxiliary electrode AE, and physically by barrier BR
It divides.Therefore, it is possible to discontinuously form each of organic compound layer OL and cathode CAT on auxiliary electrode AE.
Organic compound layer OL is located on first substrate SUB1, and dike layer BN and barrier BR are formed in first substrate SUB1
On.Organic compound layer OL can be widely formed in the whole surface of first substrate SUB1.Organic compound layer OL is it
The layer that middle electrons and holes are combined and shone.Organic compound layer OL includes emission layer EML and can also include in following
It is one or more: hole injection layer HIL, hole transporting layer HTL, electron supplying layer ETL and electron injecting layer EIL.Emission layer
EML may include the luminescent material for generating white light.
The organic compound layer OL of transmitting white light can have more laminated construction, for example, n laminated construction, wherein n is equal to
Or the integer greater than 1.For example, 2 laminated construction may include charge generating layers CGL between anode A NO and cathode CAT and point
The first lamination and the second lamination on charge generating layers CGL under are not set.It is each in first lamination and the second lamination
It is a to include emission layer and include at least one common layer.The emission layer of the emission layer of first lamination and the second lamination can
To respectively include the emissive material of different colours.
The organic compound layer OL on auxiliary electrode AE is physically divided by barrier BR.Organic compound layer OL is by barrier BR
It divides and exposes the auxiliary electrode AE around barrier BR at least partly.By the part of the barrier BR organic compound layer OL divided
On barrier BR.
Cathode CAT is located on organic compound layer OL.Cathode CAT can widely be formed in the entire of first substrate SUB1
On surface.Cathode CAT can be formed by the transparent conductive material of such as tin indium oxide (ITO) and indium-zinc oxide (IZO).Substitution
Ground, cathode CAT can be formed by sufficiently thin with the material of transmitted light, for example, magnesium (Mg), calcium (Ca), aluminium (Al), silver-colored (Ag) or its
Combination.
Cathode CAT on auxiliary electrode AE is physically divided by barrier BR.Cathode CAT is divided by barrier BR and is exposed barrier
Auxiliary electrode AE around BR is at least partly.It is located on barrier BR by the part of the barrier BR cathode CAT divided.
Cathode CAT covers organic compound layer OL, and one end of cathode CAT directly contacts auxiliary electrode AE.That is, by shielding
One end of barrier BR division and the cathode CAT being exposed directly contact the upper surface of the exposure of auxiliary electrode AE.The structure can be with
Implemented by the Step Coverage difference between formation organic compound layer OL and the material of cathode CAT.For example, because cathode CAT
By the forming material than organic compound layer OL there is the transparent conductive material of better Step Coverage to be made, so cathode CAT
It can be configured as directly contact auxiliary electrode AE.In addition, different methods can be used to be formed in order to implement the structure
Machine compound layer OL and cathode CAT.It is, for example, possible to use deposition methods to form organic compound layer OL, and can make
Cathode CAT is formed with sputtering method.Thus, one end of cathode CAT can one end than organic compound layer OL extend more
It is more, and can directly contact auxiliary electrode AE.
Cathode CAT, embodiment of the disclosure are electrically connected to by the auxiliary electrode AE that will be formed by low resistance conductive material
The voltage change depending on position can be reduced.Thus, embodiment of the disclosure can minimize the heterogeneity of brightness.
Cathode CAT via auxiliary electrode AE is electrically connected to Evss line EVL and so as to receive low potential power source voltage.
That is, embodiment of the disclosure is capable of providing the electric power that wherein Evss line EVL, auxiliary electrode AE and cathode CAT are sequentially connected
Supply path.And/or cathode CAT can directly receive the low potential power source voltage from power supply generating portion (not shown).
That is, cathode CAT can directly receive the low potential of the pad (not shown) supply via the side for being provided in first substrate SUB1
Supply voltage.
Colour filter CF is formed on the second substrate SUB2 for being attached to first substrate SUB1.Colour filter CF may include red
(R), blue (B) and green (G) colour filter.Pixel may include red, blue and green light the sub-pixel of transmitting, and colour filter CR
Corresponding sub-pixel can be individually allocated to.If required or expectation, pixel can also include white (W) sub-pixel.Red,
Blue and green colour filter CF is separated by black matrix BM.Adjacent color filter CF black matrix BM being provided on the second substrate SUB2
Between, and black matrix can prevent the generation of colour-mixed defect.
The first and second the substrate SUB1 and SUB2 completed are attached to each other, and filled layer FL is mediate.Filled layer FL
It can be formed by the resin based on epoxy resin and the resin based on acrylic.However, embodiment is without being limited thereto.
The protective layer PL for being used for guard block can be provided in first substrate SUB1.Protective layer PL is located at cathode CAT
On.Protective layer PL can be widely formed in the whole surface of first substrate SUB1.Protective layer PL can be aoxidized by such as silicon
Object (SiOx), silicon nitride (SiNx) inorganic material formed.
More specifically, protective layer PL is located on cathode CAT and can stop enter Organic Light Emitting Diode OLE's
The infiltration of foreign material.For example, because include transparent conductive material cathode CAT be crystal member and cannot stop ion and
The infiltration of moisture, so cathode CAT can be passed through from the moisture that filled layer enters and organic compound layer OL can be entered.This
Disclosed embodiment further includes the protective layer PL on Organic Light Emitting Diode OLE, and can stop that organic light emission can be entered
The moisture of diode OLE.Thus, embodiment of the disclosure can prevent the reduction in the service life of Organic Light Emitting Diode OLE and bright
Degree reduces.
In addition, protective layer PL is located on cathode CAT and can buffer or weaken by first substrate SUB1 and the second base
Plate SUB2 is applied to the stress of cathode CAT when being attached to each other.For example, because the cathode CAT including transparent conductive material has
Frangible characteristic, thus cathode CAT can due to application external force and be easily broken.Embodiment of the disclosure further includes cathode
It protective layer PL on CAT and can prevent from generating crack in cathode CAT.In addition, embodiment of the disclosure being capable of anti-block
Or moisture is via the infiltration in crack.
Protective layer PL can have the thickness greater than predetermined thickness, to execute above-mentioned function.That is, protective layer PL needs have
Greater than the thickness of the first thickness t1 of earlier set, smoothly to execute moisture barrier function and pooling feature.For example, protective layer
The thickness of PL can be set to a few micrometers (μm).Chemical vapor deposition (CVD) technique can be used to provide first thickness t1
Protective layer PL.
It needs widely to form protective layer PL, so as to the whole surface of Organic Light Emitting Diode OLE be covered, to hold
The above-mentioned function of row.However, because carrying out shape using CVD technique (due to thickness limits, CVD technique has unfavorable Step Coverage)
At protective layer PL, so protective layer PL is not formed continuously and is physically divided in the region for being provided with barrier BR.It changes
Sentence is talked about, and as shown in Figure 4, the protective layer PL on auxiliary electrode AE is physically divided by barrier BR.
In the case, moisture can enter between the protective layer PL divided, and light-emitting component can be attributed to moisture
And it deteriorates.For example, when first substrate SUB1 and the second substrate SUB2 are attached, for being applied on first substrate SUB1
During the technique for adding the forming material of filled layer FL, it can enter between the protective layer PL divided from the moisture of external penetration.Make
For another example, the moisture permeated along sealant SL and filled layer FL can enter between the protective layer PL divided.
Fig. 5 be schematically example according to the viewgraph of cross-section of the thin film transistor region of first embodiment of the present disclosure.Fig. 6
Be schematically example according to the viewgraph of cross-section in the auxiliary electrode area of first embodiment of the present disclosure.Fig. 7 illustrates atomic layer
Deposit the step coverage characteristics of (ALD) technique.
It referring to figure 5 and figure 6, further include forming protective layer PL thereon according to the OLED display of first embodiment of the present disclosure
First substrate SUB1 on cap rock CL, on first substrate SUB1.
Cap rock CL be formed in extensively on first substrate SUB1 with protective mulch PL, barrier BR, exposure auxiliary electrode AE
Deng whole.Cap rock CL is provided as masking open area (shield), open area is that protective layer PL is generated when being divided.
Cap rock CL is formed as one, so that it is continuously formed (or having its continuity) in the whole surface of first substrate SUB1.
That is, (or maintaining its continuity) that cap rock CL is not divided and is continuously formed by barrier BR, different from protective layer PL.Thus,
Set cap rock CL to the outer surface of covering barrier BR.
By the way that including cap rock CL, first embodiment of the present disclosure can be effectively prevented moisture infiltration into light-emitting component,
Thus the deterioration of light-emitting component is minimized.Thus, first embodiment of the present disclosure is capable of providing with the product reliability improved
OLED display.
Atomic layer deposition (ALD) technique can be used to provide above-mentioned cap rock CL in first embodiment of the present disclosure.The disclosure
First embodiment be able to use the ALD technique of the Step Coverage having had and can be completely covered first substrate SUB1's to be formed
The cap rock CL of whole surface.In addition, not divided from Fig. 7 it can be seen that being able to use the formation of ALD technique with abrupt slope but continuous
The layer of formation.
Cap rock CL can be formed by inorganic material.For example, cap rock CL can be by aluminium oxide (Al2O3) and silicon nitride
(SiNx) formed.Because the subtle moisture infiltration path that cap rock CL block protective layer PL is formed when being divided be it is enough,
Cap rock can be formed relatively thin.Because cap rock CL is formed thin as described above, embodiment of the disclosure is just used for (big
Scale) production application manufacturing process for have the advantage that.The thickness of cap rock CL can be set to several nanometers (nm).For example,
Cap rock CL can have the second thickness t2 thinner than the protective layer PL with first thickness t1.
Fig. 8 is the viewgraph of cross-section of the schematically example of the shape of example barrier (barrier).
Referring to Fig. 8, barrier BR can be formed as include first structure B1 and the second structure B2 bilayer.First structure B1
It can be set on the second structure B2, the edge of first structure B1 can have eaves shape.That is, the edge of first structure B1 can
To protrude outward preset distance RR from the edge of the second structure B2.It can be with the edge and the second knot of suitably selected first structure B1
The distance between the edge of structure B2 RR, so that barrier BR is dividing organic compound layer OL (see Fig. 6) and cathode CAT (see Fig. 6)
Each of when can expose auxiliary electrode AE at least partly.In other words, to organic compound layer OL (see Fig. 6) and yin
Each of pole CAT (see Fig. 6) is patterned, to be attributed between the edge of first structure B1 and the edge of the second structure B2
Preset distance RR, divided around barrier BR this each when exposure auxiliary electrode AE at least partly.First structure B1 can
To have the reverse tapered shapes as shown in (a) of Fig. 8, and it can have the conical by its shape as shown in (b) of Fig. 8.First
Structure B1 and the second structure B2 can be formed by different materials.
Barrier BR can be formed include first structure B1 single layer.In the case, first structure B1 has wherein
The edge of upside protrudes outward the shape of preset distance RR from the edge of downside.For example, first structure B1 can have such as Fig. 8
(c) reverse tapered shapes shown in.That is, the vertical cross-sectional shape of first structure B1 can have trapezoidal shape, upside can be with
With the length longer than downside, and one end of upside can protrude outward preset distance RR from one end of downside.It can be suitable
The distance between one end of one end and downside on the upside of ground selection RR, so that barrier BR is dividing organic compound layer OL (see figure
6) and when each of cathode CAT (see Fig. 6), can expose auxiliary electrode AE at least partly.In other words, to organising
It closes each of nitride layer OL (see Fig. 6) and cathode CAT (see Fig. 6) to be patterned, with one end and downside on the upside of being attributed to
The distance between one end RR is being divided in organic compound layer OL (see Fig. 6) and cathode CAT (see Fig. 6) around barrier BR
Each when, exposure auxiliary electrode AE at least partly.
<second embodiment>
Fig. 9 be schematically example according to the viewgraph of cross-section of the thin film transistor region of second embodiment of the present disclosure.Figure
10 be schematically example according to the viewgraph of cross-section in the auxiliary electrode area of second embodiment of the present disclosure.When Figure 11 A and Figure 11 B
It illustrates to sequence and is used to form method outstanding.The configuration of second embodiment is different from matching for first embodiment in auxiliary electrode area
It sets, and will focus on auxiliary electrode area to following to describe second embodiment.
Referring to Fig. 9 and Figure 10, the OLED display according to second embodiment of the present disclosure includes display panel, the display surface
Plate includes first substrate SUB1 and the second substrate SUB2 facing with each other.It can be by filled layer FL between first substrate SUB1 and
Between two substrate SUB2.
First substrate SUB1 is the thin film transistor (TFT) battle array for being provided with thin film transistor (TFT) T and Organic Light Emitting Diode OLE
Column substrate.The second substrate SUB2 is the color filter array substrate for being provided with colour filter CF.The second substrate SUB2 may be used as
Package substrate.Sealant SL can be used first substrate SUB1 and the second substrate SUB2 are attached to each other.Sealant SL is set to
It the edge of first substrate SUB1 and the edge of the second substrate SUB2 and is tieed up between first substrate SUB1 and the second substrate SUB2
Hold preset distance.(or receiving) can be set in sealant SL in filled layer FL.
First substrate SUB1 can be divided into thin film transistor region TA and auxiliary electrode area AEA, thin film transistor (TFT) T and have
Machine light emitting diode OLE is set in the TA of thin film transistor region, and auxiliary electrode AE is provided in auxiliary electrode area AEA.Film
The transistor T and Organic Light Emitting Diode OLE for being connected to thin film transistor (TFT) T is formed in the thin film transistor region of first substrate SUB1
On TA.The auxiliary electrode AE for being connected to cathode CAT is formed on the auxiliary electrode area AEA of first substrate SUB1.
Auxiliary electrode AE is located on interlevel dielectric layer IN.Auxiliary electrode AE may include low resistance conductive material.As after
By description, auxiliary electrode AE can connect to cathode CAT and can be used for reducing the resistance of cathode CAT in face.Auxiliary electrode
AE can be formed in identical as source electrode SE and drain electrode DE by and the source electrode SE and identical material of drain electrode DE
Layer.However, embodiment is without being limited thereto.
Auxiliary electrode AE may be used as Evss line EVL.That is, auxiliary electrode AE can be Evss line EVL part or from
The part of Evss line EVL branch.Auxiliary electrode AE can receive the electricity of the low potential power source from power supply generating portion (not shown)
Pressure.
Although it is not shown, auxiliary electrode AE can be electrically connected to the Evss line EVL being arranged under auxiliary electrode AE,
At least one insulating layer is between auxiliary electrode AE and Evss line EVL.Evss line EVL can receive from power supply generating portion
Low potential power source voltage and low potential power source voltage is transferred to auxiliary electrode AE.Auxiliary electrode AE and Evss line EVL can be with
It is connected to each other via the contact hole of at least one insulating layer across auxiliary electrode AE and Evss line EVL.
On the passivation layer PAS and complanation layer OC first substrate SUB1 sequentially disposed thereon for forming auxiliary electrode AE.It is blunt
Change layer PAS exposure auxiliary electrode AE at least partly.
On the complanation layer OC first substrate SUB1 disposed thereon for forming passivation layer PAS.Complanation layer OC exposes passivation layer
Each of PAS and the auxiliary electrode AE of exposure are at least partly.
On the dummy pattern DP first substrate SUB1 disposed thereon for forming complanation layer OC.Dummy pattern DP can by with sun
ANO identical material in pole is formed in layer identical with anode A NO.However, embodiment is without being limited thereto.Dummy pattern DP setting
When removing complanation layer OC in the region Chong Die with auxiliary electrode AE on the passivation layer PAS of exposure.Dummy pattern DP is provided as
So that the end of dummy pattern DP is more prominent than passivation layer more in the region Chong Die with auxiliary electrode AE.It is more prominent than passivation layer PAS
The end of more dummy pattern DP can be referred to as prominent DPD out.
Prominent DPD is for physically dividing each of organic compound layer OL of formation and cathode CAT below.It changes
Sentence is talked about, and each of organic compound layer OL and cathode CAT are arranged on auxiliary electrode AE, and by prominent DPD physics
Upper division.Thus, each of organic compound layer OL and cathode CAT can be discontinuously formed on auxiliary electrode AE.
It can be by constituting the etching selectivity difference between the material of passivation layer PAS and the material of composition dummy pattern DP
To implement prominent DPD.That is, 1A and Figure 11 B referring to Fig.1, will constitute the material PASM of passivation layer PAS and constitute dummy pattern DP's
Material DPM is applied on auxiliary electrode AE, and executes the etch process for being patterned to material PASM and DPM.Because
The material PASM for constituting passivation layer PAS, which is selected as, relative to the material DPM for constituting dummy pattern DP there is big etching to select
The material of sex differernce, so the etch quantity for constituting the material PASM of passivation layer PAS can be relatively larger than composition dummy pattern DP's
The etch quantity of material DPM.Thus, passivation layer PAS can have the undercut shape for being recessed into the inside of dummy pattern DP.It is attributed to
The part of undercut shape, dummy pattern DP can be more prominent than passivation layer PAS more, and so as to be implemented as prominent DPD.
On the dike layer BN first substrate SUB1 disposed thereon for forming dummy pattern DP.Dike layer BN includes exposed anode A NO
Most first opening.In addition, dike layer BN includes most second opening of exposed auxiliary electrode AE and dummy pattern DP.
The central part and auxiliary electrode AE of second opening while exposure dummy pattern DP.
On the organic compound layer OL first substrate SUB1 disposed thereon for forming dike layer BN.Organising on auxiliary electrode AE
Nitride layer OL is closed physically to be divided by protruding DPD.Organic compound layer OL is divided and around the prominent DPD of exposure by protruding DPD
Auxiliary electrode AE is at least partly.By the organic compound layer OL that prominent DPD is divided be located at the upper part of dummy pattern DP with
In each of upper part of auxiliary electrode AE.
Cathode CAT is located on organic compound layer OL.Cathode CAT on auxiliary electrode AE is physically divided by protruding DPD.
Cathode CAT is divided by protruding DPD, and the auxiliary electrode AE around the prominent DPD of exposure is at least partly.It is divided by prominent DPD
Cathode CAT is located in each of the upper part of dummy pattern DP and the upper part of auxiliary electrode AE.
Cathode CAT covers organic compound layer OL, and one end of cathode CAT directly contacts auxiliary electrode AE.That is, by protruding
One end of DPD division and the cathode CAT being exposed directly contact the upper surface of exposed auxiliary electrode AE.In other words, cathode
One end of CAT can one end than organic compound layer OL extend (extend) more, and can directly contact auxiliary electrode
AE。
Cathode CAT, embodiment of the disclosure are electrically connected to by the auxiliary electrode AE that will be formed by low resistance conductive material
The voltage change depending on position can be reduced.Thus, embodiment of the disclosure can minimize the heterogeneity of brightness.
Cathode CAT can connect the auxiliary electrode AE of the most part of Evss line EVL, and can receive low potential power source
Voltage.That is, embodiment of the disclosure is capable of providing the power supply path of wherein sequential connection auxiliary electrode AE and cathode CAT.
Alternatively, cathode CAT can be electrically connected to the Evss being arranged under auxiliary electrode AE via auxiliary electrode AE
Line EVL, and cathode CAT can receive low potential power source voltage.It is wherein linked in sequence that is, embodiment of the disclosure is capable of providing
The power supply path of Evss line EVL, auxiliary electrode AE and cathode CAT.
And/or cathode CAT can directly receive the low potential power source voltage from power supply generating portion (not shown).That is,
Cathode CAT can directly receive the low potential power source of the pad (not shown) supply via the side for being provided in first substrate SUB1
Voltage.
Protective layer PL is located on cathode CAT.Protective layer PL needs are formed in whole surface extensively, to protect the member that shines
Part.However, protective layer PL is physically divided by protruding DPD and is discontinuously formed in which provide the regions of prominent DPD
In.That is, as shown in Figure 10, the protective layer PL on auxiliary electrode AE is physically divided by protruding DPD.In the case, moisture
It can enter between the protective layer PL divided, and light-emitting component can be attributed to moisture and deteriorate.
Moisture infiltration in order to prevent, the OLED display according to second embodiment of the present disclosure further include on protective layer PL
Cap rock CL.Cap rock CL is formed on first substrate SUB1 extensively with the whole of protective mulch PL, the auxiliary electrode AE etc. of exposure.
Cap rock CL is provided as to the open area generated when masking protective layer PL is divided.Cap rock CL is formed as one, so that it connects
(or there is its continuity) is formed continuously in the whole surface of first substrate SUB1.That is, cap rock CL is not divided simultaneously by prominent DPD
And it is continuously formed (or maintaining its continuity), it is different from protective layer PL.Thus, cap rock CL is arranged to cover prominent DPD's
Outer surface.
By the way that including cap rock CL, second embodiment of the present disclosure can be effectively prevented moisture infiltration into light-emitting component,
Thus the deterioration of light-emitting component is minimized.Thus, second embodiment of the present disclosure is capable of providing with the product reliability improved
OLED display.
Although describing embodiment referring to multiple example embodiments of embodiment, those skilled in the art can be with
It designs many other modifications and embodiment in the range of the principle for falling into the displosure.In particular, in the disclosure, figure and institute
In the component part and/or arrangement of body combination arrangement in attached the scope of the claims, various changes and modifications are possible.
In addition to change and modification in component part and/or arrangement, it will be understood by those skilled in the art that it will be obvious that substitution, which uses also,
's.
Claims (15)
1. a kind of organic light emitting diode display, the organic light emitting diode display includes:
Substrate, the substrate include thin film transistor region and auxiliary electrode area, and film is provided in the thin film transistor region
Transistor and the Organic Light Emitting Diode for being connected to the thin film transistor (TFT) are provided with auxiliary electricity in the auxiliary electrode area
Pole；
Barrier, the barrier are arranged on the auxiliary electrode；
Cathode, the cathode are included in the Organic Light Emitting Diode, are divided by the barrier, and the exposure auxiliary electricity
At least partly, the end of the cathode is directly contacted with the auxiliary electrode for pole；And
Cap rock, on the cathode, the cap rock has continuity to cover the barrier and the auxiliary for the cap rock setting
Electrode.
2. organic light emitting diode display as described in claim 1, also comprising between the cathode and the cap rock
Protective layer,
Wherein, the protective layer is divided by the barrier and exposes the auxiliary electrode at least partly.
3. organic light emitting diode display as described in claim 1, also includes power supply line, the power supply line is set to described
Under auxiliary electrode and the supply voltage from power supply generating portion is received, at least one insulating layer is between the power supply line and institute
It states between auxiliary electrode,
Wherein, the auxiliary electrode is electrically connected to the power supply line via the contact hole for passing through at least one insulating layer.
4. organic light emitting diode display as described in claim 1, wherein the organic compound of the Organic Light Emitting Diode
Nitride layer is divided by the barrier and exposes the auxiliary electrode at least partly,
Wherein, the end of the cathode on the organic compound layer extends than the end of the organic compound layer
More and directly contact the auxiliary electrode.
5. organic light emitting diode display as described in claim 1, wherein the cap rock is by aluminium oxide (Al2O3) and silicon nitrogen
Compound (SiNx) in select any formation.
6. organic light emitting diode display as claimed in claim 2, wherein the thickness of the cap rock is set to be less than institute
State the thickness of protective layer.
7. organic light emitting diode display as claimed in claim 2, wherein the cap rock is covered on the protective layer by institute
State the open area generated when barrier divides.
8. a kind of organic light emitting diode display, the organic light emitting diode display includes:
Substrate, the substrate include thin film transistor region and auxiliary electrode area, and film is provided in the thin film transistor region
Transistor and the Organic Light Emitting Diode for being connected to the thin film transistor (TFT) are provided with auxiliary electricity in the auxiliary electrode area
Pole；
Passivation layer, the passivation layer are arranged on the auxiliary electrode and expose the auxiliary electrode at least partly；
Dummy pattern, the dummy pattern are arranged on the passivation layer, and the dummy pattern includes protruding, the protrusion with
It is more more prominent than the passivation layer in the region of the auxiliary electrode overlapping；
Cathode, the cathode are included in the Organic Light Emitting Diode, and by the prominent division, and the exposure auxiliary is electric
At least partly, the end of the cathode is directly contacted with the auxiliary electrode for pole；And
Cap rock, on the cathode, the cap rock has continuity to cover the protrusion and the auxiliary for the cap rock setting
Electrode.
9. organic light emitting diode display as claimed in claim 8, also comprising between the cathode and the cap rock
Protective layer,
Wherein, the protective layer by the prominent division and exposes the auxiliary electrode at least partly.
10. organic light emitting diode display as claimed in claim 8, also includes power supply line, the power supply line is set to institute
State under auxiliary electrode and receive the supply voltage from power supply generating portion, at least one insulating layer between the power supply line with
Between the auxiliary electrode,
Wherein, the auxiliary electrode is electrically connected to the power supply line via the contact hole for passing through at least one insulating layer.
11. organic light emitting diode display as claimed in claim 8, wherein the auxiliary electrode receives raw from power supply
At the supply voltage of part.
12. organic light emitting diode display as claimed in claim 8, wherein the Organic Light Emitting Diode organises
Nitride layer is closed by the prominent division and exposes the auxiliary electrode at least partly,
Wherein, the end of the cathode on the organic compound layer extends than the end of the organic compound layer
More and directly contact the auxiliary electrode.
13. organic light emitting diode display as claimed in claim 8, wherein the cap rock is by aluminium oxide (Al2O3) and silicon
Nitride (SiNx) in select any formation.
14. organic light emitting diode display as claimed in claim 9, wherein the thickness of the cap rock is set to be less than
The thickness of the protective layer.
15. organic light emitting diode display as claimed in claim 8, wherein the cap rock be covered on the protective layer by
The open area generated when the prominent division.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0181317 | 2017-12-27 | ||
| KR1020170181317A KR102489043B1 (en) | 2017-12-27 | 2017-12-27 | Organic light emitting display device |
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| Publication Number | Publication Date |
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| CN110010657A true CN110010657A (en) | 2019-07-12 |
| CN110010657B CN110010657B (en) | 2023-06-02 |
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| CN201811561489.4A Active CN110010657B (en) | 2017-12-27 | 2018-12-20 | Organic light emitting diode display |
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| US (1) | US10971700B2 (en) |
| JP (1) | JP6770051B2 (en) |
| KR (1) | KR102489043B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114706249A (en) * | 2022-06-07 | 2022-07-05 | 惠科股份有限公司 | Display panel and display device |
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Also Published As
| Publication number | Publication date |
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| US20190198806A1 (en) | 2019-06-27 |
| CN110010657B (en) | 2023-06-02 |
| US10971700B2 (en) | 2021-04-06 |
| KR20190079245A (en) | 2019-07-05 |
| JP2019121599A (en) | 2019-07-22 |
| JP6770051B2 (en) | 2020-10-14 |
| DE102018132497A1 (en) | 2019-06-27 |
| KR102489043B1 (en) | 2023-01-16 |
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