CN110010583A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
CN110010583A
CN110010583A CN201811382712.9A CN201811382712A CN110010583A CN 110010583 A CN110010583 A CN 110010583A CN 201811382712 A CN201811382712 A CN 201811382712A CN 110010583 A CN110010583 A CN 110010583A
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CN
China
Prior art keywords
wiring
convex block
terminal
semiconductor chip
package substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811382712.9A
Other languages
Chinese (zh)
Other versions
CN110010583B (en
Inventor
稻垣真野
小柳胜
伊东干彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Priority to CN201811382712.9A priority Critical patent/CN110010583B/en
Publication of CN110010583A publication Critical patent/CN110010583A/en
Application granted granted Critical
Publication of CN110010583B publication Critical patent/CN110010583B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
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    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The semiconductor device of embodiment has: the 1st semiconductor chip；The top in the 1st face of the 1st semiconductor chip is arranged in 1st wiring and the 2nd wiring；1st terminal is connect with one end of one end of the 1st wiring and the 2nd wiring, and and external connection；2nd terminal is connect with the other end of the 1st wiring；And the 3rd terminal, it is connect with the other end of the 2nd wiring, and connect with the 2nd terminal.

Description

Semiconductor device
The relevant information of divisional application
This case is divisional application.The female case of the division be the applying date be on January 11st, 2016, application No. is 201610016717.4, the invention patent application case of entitled " semiconductor device ".
Related application
Present application enjoy with U.S. provisional patent application cases 62/153,925 (applying date: on April 28th, 2015) and U.S. patent application case 14/844,602 (applying date: on September 3rd, 2015) is the priority of basic application case.Present application Full content by referring to these basic application cases comprising basic application case.
Technical field
Embodiments of the present invention are related to a kind of semiconductor device.
Background technique
Multi-chip package has been proposed in order to increase memory capacity in semiconductor devices.It, will in multi-chip package Multiple cores chip (semiconductor chip) lamination is packaged on package substrate.As by the side of multiple cores chip lamination Formula, proposition have TSV (Through Silicon Via, silicon perforation) mode.
In TSV mode, each core chips is provided with TSV, and the TSV between core chips is connected by convex block (soldered ball) It connects.In addition, being provided with wiring layer (RDL:Re-Distribution again on the lower surface of undermost core chips Layer), via this again wiring layer and core chips is connect with package substrate.In addition, between package substrate and core chips It is provided with interface chip.Interface chip is connected to package substrate and core chips via wiring layer again.Via this wiring again Layer and supply voltage, ground voltage and various signals etc. are transmitted between chip and substrate.
The wiring width of the wiring of wiring layer is determined by design rule again.It therefore, can not be certainly in order to reduce wiring resistance Wiring width is increased by ground.Therefore, especially to wiring layer supply line voltage again or ground voltage, in order to drop Low wiring resistance, as same supply voltage with or same ground voltage wiring layer again and need a plurality of (such as 2) to match Line.The terminal of core chips side or the terminal of interface chip side are connect by these a plurality of wirings with the terminal of package substrate side.This When, closed circuit (must be provided with opening portion) can not be set by a plurality of wiring due to the restriction on the processing procedure of wiring layer again.Its The reason is that, the width of wiring closet becomes smaller or is formed with the pattern of acute angle and forming closed circuit, thus resin (insulation Layer) it is difficult to equably be embedded to wiring closet.
In contrast, as shown in fig. 6, in a comparative example, as same supply voltage with or same ground voltage Again wiring layer and when being formed with 2 (a pair) wirings (wiring 330a, 330b or wiring 330c, 330d), in 100 side of package substrate It is provided with 2 terminals (convex block 110f, 110e or convex block 110c, 110d).2 respective one end of wiring 330 are connected to this 2 ends The each of son 110.110,2 wirings 330 of terminal in 100 side of package substrate have opening portion as a result,.On the other hand, match for 2 The other end of line 330 is all connected to 1 terminal (through-hole 360 or convex block of 200 side of 300 side of lamination core chips or interface chip 210)。
However, encapsulating the terminal 110 of 100 sides by being provided with multiple (being herein 2) terminals 110 in 100 sides of encapsulation Sum becomes more.In general, size/spacing of the terminal 110 of 100 side of package substrate compared with 300 side of lamination core chips terminal 360 or Size/spacing of the terminal 210 of 200 side of interface chip is big.Therefore, if the quantity of the terminal 110 of 100 side of package substrate becomes more, Then package dimension becomes larger.
In addition, if the quantity of the terminal 110 of 100 side of package substrate becomes more, by the layout of terminal 110 from a part Distance until terminal 110 to the terminal 210 of the terminal 360 of 300 side of lamination core chips or interface side becomes remote.As a result, producing Raw following problem, i.e., the wiring 330 between terminal is elongated and the wiring resistance, the electricity that cause signal, supply voltage and ground voltage etc. The increase of appearance and inductance.
In addition, wiring lengths must be made consistent in order to reduce the deflection between IO the high speed signals such as IO.In the situation Under, it is necessary to keep the length of other wirings 330 consistent with longest wiring (farther away wiring at a distance between terminal) 330.Therefore, i.e., Make to be the wiring 330 being closer between terminal, it is also necessary to illusory wiring be arranged and make its length and longest wiring 330 1 It causes.As a result, wiring 330 mixes and is difficult to be designed.
Summary of the invention
Embodiments of the present invention provide a kind of semiconductor device that can reduce package dimension.
The semiconductor device of embodiment has: the 1st semiconductor chip；1st wiring and the 2nd wiring are arranged the described 1st The top in the 1st face of semiconductor chip；1st terminal is connect with one end of one end of the 1st wiring and the 2nd wiring, and With external connection；2nd terminal is connect with the other end of the 1st wiring；And the 3rd terminal, the other end with the 2nd wiring Connection, and connect with the 2nd terminal.
Detailed description of the invention
Fig. 1 is the top view for indicating the semiconductor device of embodiment.
Fig. 2 is the cross-sectional view for indicating the semiconductor device of embodiment, and for along the cross-sectional view of the line A-A of Fig. 1.
Fig. 3 is that the dotted line part in Fig. 2 is amplified resulting cross-sectional view.
Fig. 4 is the cross-sectional view for indicating the semiconductor device of embodiment, and for along the cross-sectional view of the line B-B of Fig. 1.
Fig. 5 is that the dotted line part in Fig. 4 is amplified resulting cross-sectional view.
Fig. 6 is the top view for indicating the semiconductor device of comparative example.
Specific embodiment
Hereinafter, being illustrated referring to attached drawing to embodiment.Identical reference marks is marked to same section in the accompanying drawings.
< embodiment >
Hereinafter, being illustrated using semiconductor device of the Fig. 1 to Fig. 5 to embodiment.
In the present embodiment, for example same supply voltage use or same ground voltage are provided in wiring layer 380 again 2 wiring 330a, 330b (or 330c, 330d).For these wirings 330a, 330b (or 330c, 330d), in encapsulation base 100 side of plate is provided with 1 convex block 110a (or convex block 110b), 200 side of interface chip be provided with 2 convex blocks 210a, 210b (or 300 side of lamination core chips is provided with 2 through-holes 360c, 360d).The number of the convex block 110 of larger size can be reduced as a result, Amount, to can get the wiring 330 and other effects shortened again in wiring layer 380.Hereinafter, being described in detail to embodiment.
[composition in embodiment]
It is illustrated using composition of the Fig. 1 to Fig. 5 to the semiconductor device of embodiment.
Fig. 1 is the top view for indicating the semiconductor device of embodiment.
As shown in Figure 1, the semiconductor device of embodiment includes package substrate 100, interface chip 200 and lamination core Chip 300.
Package substrate 100 installs interface chip 200 and lamination core chips 300.Package substrate 100 and external connection, from Outside is to package substrate 100 supply line voltage VCC or ground voltage VSS.Package substrate 100 will be from external supply voltage VCC or ground voltage VSS are directly fed to lamination core chips 300.Package substrate 100 is by supply voltage VCC or ground voltage VSS is supplied to interface chip 200.Alternatively, package substrate 100 is by supply voltage VCC or ground voltage VSS via interface chip 200 supply to lamination core chips 300.In addition, package substrate 100 is not only supplied via interface chip 200 Voltage will also be supplied from external signal (data-signal and command signal etc.) IO to core chips 300.
Lamination core chips 300 is including, for example, memory circuits and memory controls such as NAND (Not AND, with non-) flash memories Device processed.The storage of lamination core chips 300 is from external data etc..
Interface chip 200 includes interface circuit.Interface circuit includes logic circuit and analog circuit etc..Interface chip 200 Signal IO, supply voltage and ground voltage are transmitted between package substrate 100 and lamination core chips 300.
Under vertical view, lamination core chips 300 is arranged in package substrate 100.In addition, interface chip 200 is arranged in product Central portion in layer core chips 300.The size of package substrate 100 determines by the size of lamination core chips 300, and by these Determine package dimension.
Under vertical view, be provided in the planar dimension of lamination core chips 300 multiple convex blocks 110, a plurality of wiring 330, And multiple through-holes 360.In addition, being provided with multiple convex blocks 210 in interface chip 200.
The both ends for the lamination core chips 300 that multiple convex blocks 110 are arranged on the 1st direction (attached drawing left and right directions), The each at both ends is arranged in such as 2 column along the 2nd direction (attached drawing up and down direction).In addition, being arranged in multiple convex blocks of the 1st column 110 be arranged in the 2nd column multiple convex blocks 110 it is interlaced configure.Multiple convex blocks 110 are electrically connected with package substrate 100 Terminal.From outside to any one of each convex block 110 supply signal IO, supply voltage VCC or ground voltage VSS.
Multiple convex blocks 210 are arranged in the both ends of the interface chip 200 on the 1st direction, and each at both ends along 2nd direction is arranged in 2 column.Multiple convex blocks 210 are the terminals being electrically connected via interface chip 200 with lamination core chips 300. Same signal IO, same supply voltage VCC or same ground connection electricity are supplied to a pair of of convex block 210a, 210b for being arranged in the 1st direction Press VSS.
Multiple through-holes 360 are arranged in same column along the 2nd direction and multiple convex blocks 210 outside interface chip 200.Multiple through-holes 360 be the terminal being electrically connected with core chips 300.Same power supply is supplied to a pair of of through-hole 360c, 360d for being arranged in the 1st direction Voltage VDD or same ground voltage VCC.
Any convex block 110 is connect by wiring 330 with a pair of of convex block 210 or any convex block 110 with a pair of of through-hole 360.
More specifically, one end of wiring 330a and one end of wiring 330b are electrically connected with same convex block 110a.In addition, matching The other end of line 330a is electrically connected with convex block 210a, and the other end of wiring 330b is electrically connected with convex block 210b.Wiring 330a as a result, There is opening portion in 200 side of interface chip (side convex block 210a, 210b) with wiring 330b.Convex block 210a and convex block 210b are in interface Electrical connection in chip 200.In addition, convex block 210a and convex block 210b can also via interface chip 200 and with lamination core chips 300 Electrical connection.
In addition, one end of wiring 330c and one end of wiring 330d are electrically connected with same convex block 110b.In addition, wiring 330c The other end be electrically connected with through-hole 360c, the other end of wiring 330d is electrically connected with through-hole 360d.Wiring 330c and wiring as a result, 330d has opening portion in 300 side of lamination core chips (side through-hole 360c, 360d).Through-hole 360c and through-hole 360d are in lamination core Electrical connection in chip centroid 300.
In addition, multiple convex blocks 110 of signal IO are respectively provided at a distance from different between multiple convex blocks 210.These are complete Portion is electrically connected using the wiring 330 of same length.Therefore, a part between distance shorter convex block 110 and convex block 210 is set It is equipped with redundancy wiring part.
Herein, so-called redundancy wiring part, which refers to, redundantly lengthens between convex block 110 and convex block 210 in wiring 330 Part is of virtually the function of transmission signal IO.
In addition, connecting convex block 110 with convex block 210 or through-hole 360 by 2 (a pair) wirings 330, but it can also be used 3 Wiring connection more than item.In this case, the quantity of wiring 330 is identical as the quantity of convex block 210 or through-hole 360.In addition, In Fig. 1, as signal IO with and used 1 wiring 330, but can also be used with supply voltage and ground voltage is with being used in the same manner 2 (a pair) wirings 330.
Fig. 2 is the cross-sectional view for indicating the semiconductor device of embodiment, and for along the cross-sectional view of the line A-A of Fig. 1.
As shown in Fig. 2, being provided with convex block on the lower surface of package substrate (semiconductor substrate) 100 in line A-A section 120.In the case where semiconductor device is BGA (Ball Grid Array ball grid array) encapsulation, convex block 120 is soldered ball.Envelope Fill substrate 100 via convex block 120 and and external electrical connections.
Interface chip (semiconductor chip) 200 is provided on the upper surface of package substrate 100.
Lamination core chips 300 is provided with above the upper surface of interface chip 200 and package substrate 100.Lamination core Chip centroid 300 includes multiple cores chip (semiconductor chip) 300a-300h.The side from below multiple cores chip 300a-300h Successively lamination.Each core chips 300a-300g in addition to the core chips 300h except top layer be provided with from its upper surface to Reach the TSV (through electrode) 310 of lower surface.Moreover, being provided with convex block 320 between each TSV310.
Wiring 330 is provided on the lower surface of undermost core chips 300a.In the wiring 330 and interface chip Convex block 210 is provided between 200.On the other hand, convex block 110 is provided between wiring 330 and package substrate 100.Wiring 330 The distance between interface chip 200 is less than at a distance from wiring 330 and package substrate 100.Therefore, convex block 210 size (such as Planar dimension) it is less than the size of convex block 110.
Hereinafter, using Fig. 3 to the more detailed connection section of package substrate 100, interface chip 200 and core chips 300 It is illustrated.
Fig. 3 is that the dotted line part in Fig. 2 is amplified resulting cross-sectional view.In addition, being indicated for ease of description in Fig. 3 Configure the convex block 110a and convex block 210a, 210b, 210c in different sections.
As shown in figure 3, being provided with insulating layer 120 on the upper surface of package substrate 100.It is arranged on the insulating layer 120 There is interface chip 200.Therefore, by insulated separation between the upper surface of package substrate 100 and the lower surface of interface chip 200.Separately Outside, electronic pads 130 are provided on the upper surface of package substrate 100.
Electronic pads 220,240 and insulating layer 230 are provided on the upper surface of interface chip 200.
It is provided with insulating layer 350 on the lower surface of undermost core chips 300a, in the lower surface of the insulating layer 350 On be provided with wiring layer 380 again.Wiring layer 380 includes wiring 330 (wiring 330a, 330b, 330c) and insulating layer 340 again.Absolutely Edge layer 340 is including, for example, resin.
Convex block 110a is provided between wiring 330a, 330b and electronic pads 130.In addition, in wiring 330a and electronic pads It is provided with convex block 210a between 220, convex block 210b is provided between wiring 330b and electronic pads 220.
That is, package substrate 100 and interface chip 200 are via electronic pads 130, convex block 110a, wiring 330a, convex block 210a and electronic pads 220 and be electrically connected, and via electronic pads 130, convex block 110a, wiring 330b, convex block 210b and electrode Pad 220 and be electrically connected.
In addition, electronic pads 220 are electrically connected via in interface chip 200 with electronic pads 240.In wiring 330e and electronic pads Convex block 210e is provided between 240.That is, electronic pads 220 also via interface chip 200, electronic pads 240, convex block 210e, And wiring 330e and be electrically connected with core chips 300a (lamination core chips 300).
Fig. 4 is the cross-sectional view for indicating the semiconductor device of embodiment, and for along the cross-sectional view of the line B-B of Fig. 1.
As shown in figure 4, being different from line A-A section in line B-B section, and do not set on the upper surface of package substrate 100 Set interface chip 200 and convex block 210.In addition, a part of wiring 330 not via interface chip 200 and with core chips 300a Electrical connection.
Hereinafter, being illustrated using more detailed connection section of the Fig. 5 to package substrate 100 and core chips 300.
Fig. 5 is that the dotted line part in Fig. 4 is amplified resulting cross-sectional view.In addition, being indicated for ease of description in Fig. 5 Configure the convex block 110b and through-hole 360c, 360d in different sections.
As shown in figure 5, being provided with insulating layer 120 and electronic pads 140 on the upper surface of package substrate 100.
Electronic pads 370 are provided on the lower surface of undermost core chips 300a.Electronic pads 370 and core chips TSV310 electrical connection in 300a.Insulating layer 350 is provided in a manner of covering electronic pads 370, in the following table of the insulating layer 350 Wiring layer 380 again are provided on face.Wiring layer 380 includes wiring 330 (wiring 330c, 330d) and insulating layer 340 again.
Convex block 110b is provided between wiring 330c, 330d and electronic pads 140.In addition, in insulating layer 350 and matching Through-hole 360c is provided between line 330c and electronic pads 370, in insulating layer 350 and between wiring 330d and electronic pads 370 It is provided with through-hole 360d.Herein, the size (such as planar dimension) of through-hole 360 is less than the size of convex block 110.
That is, package substrate 100 and core chips 300a (lamination core chips 300) are via electronic pads 140, convex block 110b, wiring 330c, through-hole 360c and electronic pads 370 and be electrically connected, and via electronic pads 140, convex block 110b, wiring 330d, through-hole 360d and electronic pads 370 and be electrically connected.
[effect of embodiment]
According to the present embodiment, for example same supply voltage use or same ground voltage are provided in wiring layer 380 again 2 wirings 330a, 330b.Wiring 330a, 330b are to interface chip 200 supply line voltage VCC or ground voltage VSS. For these wirings 330a, 330b, 100 side of package substrate is provided with 1 terminal (convex block 110a), and in interface chip 200 Side is provided with 2 terminals (convex block 210a, 210b).Moreover, one end of wiring 330a, 330b are commonly connected to convex block 110a, On the other hand, the other end of wiring 330a, 330b is connected to each of convex block 210a, 210b.As a result, by increasing interface The quantity of the convex block 210 of 200 side of chip and the opening portion that wiring 330a, 330b are set.That is, not increasing package substrate The quantity of large-sized convex block 110 of 100 sides and wiring 330a, 330b are set.
According to the construction, the quantity for the convex block 110 that larger size can be reduced relative to comparative example shown in fig. 6.By This, can reduce the size of lamination core chips 300 and package substrate 100, so as to seek the diminution of package dimension.
In addition, by reduce convex block 110 quantity, and be located at die terminals convex block 110 at a distance from convex block 210 compared with Example is close compared to change.As a result, the wiring 330 between terminal shortens, so as to reduce wiring resistance, capacitor and inductance.
In addition, the longest wiring 330 in a plurality of wiring 330 of IO can be made short compared with comparative example.IO use can be reduced as a result, A plurality of wiring closet wiring lengths difference, so as to cut down extra redundancy wiring part.
In addition, can be easy to carry out wiring design and shortening wiring lengths or cutting down redundancy wiring part.In addition, logical The freedom degree for crossing wiring design improves, and can be easy to improve equipment energy characteristic.
In addition, according to the present embodiment, for example same supply voltage use or same ground connection are provided in wiring layer 380 again 2 wirings 330c, 330d of voltage.Wiring 330c, 330d are to 300 supply line voltage of lamination core chips or ground connection electricity Pressure.For these wirings 330c, 330d, 100 side of package substrate is provided with 1 terminal (convex block 110), and in lamination core core 300 side of piece is provided with 2 terminals (through-hole 360c, 360d).Moreover, one end of wiring 330c, 330d are commonly connected to convex block 110, on the other hand, the other end of wiring 330c, 330d are connected to each of through-hole 360c, 360d.As a result, can get with The identical effect.
Several embodiments of the invention are illustrated, but these embodiments be propose the person that has come as example, and The range of non-intended limitation invention.These novel embodiments can be implemented with other various ways, and can not depart from invention Purport in the range of carry out it is various omit, displacement, change.These embodiments or its deformation are included in range or the master of invention In purport, and it is included in the range of invention and its equalization documented by claims.

Claims (9)

1. a kind of semiconductor device, it is characterised in that have:
1st semiconductor chip；
The top in the 1st face of the 1st semiconductor chip is arranged in 1st wiring and the 2nd wiring；
1st terminal is connect with one end of one end of the 1st wiring and the 2nd wiring, and and external connection；
2nd terminal is connect with the other end of the 1st wiring；And
3rd terminal is connect with the other end of the 2nd wiring, and is connect with the 2nd terminal.
2. semiconductor device according to claim 1, it is characterised in that: the size of the 1st terminal is greater than the 2nd end The size of sub and described 3rd terminal.
3. semiconductor device according to claim 1, it is characterised in that: the 2nd terminal and the 3rd terminal with it is described The inside of 1st semiconductor chip connects,
2nd terminal is the 1st through-hole being arranged between the 1st wiring and the 1st semiconductor chip, the 3rd end Son is the 2nd through-hole being arranged between the 2nd wiring and the 1st semiconductor chip.
4. semiconductor device according to claim 3, it is characterised in that: be also equipped with the 1st electronic pads, the 1st electronic pads are set It sets between the 1st semiconductor chip and the 1st through-hole and the 2nd through-hole, and by the 1st through-hole and the described 2nd Through-hole connection.
5. semiconductor device according to claim 1, it is characterised in that: it is also equipped with substrate,
1st face of the substrate is via the 1st convex block and external connection, the 2nd face and the 1st semiconductor chip of the substrate Described 1st in face of to,
1st terminal is the 2nd convex block being arranged between the 1st wiring and the 2nd wiring and the substrate.
6. semiconductor device according to claim 5, it is characterised in that: be also equipped with the 2nd semiconductor chip, the 2nd half leads Body chip is arranged between the substrate and the 1st semiconductor chip and on the 2nd face of the substrate, the 2nd end Sub and described 3rd terminal is connect with the inside of the 2nd semiconductor chip,
2nd terminal is the 3rd convex block being arranged between the 1st wiring and the 2nd semiconductor chip,
3rd terminal is the 4th convex block being arranged between the 2nd wiring and the 2nd semiconductor chip.
7. semiconductor device according to claim 6, it is characterised in that: be also equipped with the 2nd electronic pads, the 2nd electronic pads are set It sets between the 2nd semiconductor chip and the 3rd convex block and the 4th convex block, and by the 3rd convex block and the described 4th Convex block connection.
8. semiconductor device according to claim 7, it is characterised in that: the 2nd electronic pads are via the 2nd semiconductor Chip and be connected to the 1st semiconductor chip.
9. semiconductor device according to claim 1, it is characterised in that be also equipped with:
The top in the 2nd face of the 1st semiconductor chip is arranged in 3rd semiconductor chip；And
5th convex block is arranged between the 1st semiconductor chip and the 3rd semiconductor chip；
1st semiconductor chip is connect with the 3rd semiconductor chip via the electrode and the 5th convex block.
CN201811382712.9A 2015-04-28 2016-01-11 Semiconductor device with a semiconductor device having a plurality of semiconductor chips Active CN110010583B (en)

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US62/153,925 2015-04-28
US14/844,602 2015-09-03
US14/844,602 US9589946B2 (en) 2015-04-28 2015-09-03 Chip with a bump connected to a plurality of wirings
CN201610016717.4A CN106098659B (en) 2015-04-28 2016-01-11 Semiconductor device
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US9589946B2 (en) 2017-03-07
CN106098659B (en) 2018-12-14
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