CN110010314A - Super extra-high voltage grading ring and its production technology - Google Patents
Super extra-high voltage grading ring and its production technology Download PDFInfo
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- CN110010314A CN110010314A CN201910292905.3A CN201910292905A CN110010314A CN 110010314 A CN110010314 A CN 110010314A CN 201910292905 A CN201910292905 A CN 201910292905A CN 110010314 A CN110010314 A CN 110010314A
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- grading ring
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
- C08K3/042—Graphene or derivatives, e.g. graphene oxides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/42—Means for obtaining improved distribution of voltage; Protection against arc discharges
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Abstract
The present invention is aiming at the problem that existing grading ring material be easy to cause grading ring potential difference, failure under super extra-high voltage, a kind of super extra-high voltage grading ring and its production technology are provided, including grading ring ontology annular in shape, the grading ring ontology is prepared by semiconductor material, the grading ring is originally coaxially provided with aluminium ring in vitro, uniformly distributed several connecting rods in annular space between the grading ring ontology and aluminium ring, and the center of circle of the extension line of the connecting rod excessively described grading ring ontology and aluminium ring.Due to the use of semiconductor material of the present invention, grading ring produced is internal under super extra-high voltage, and there are electric fields, potential difference problem is fundamentally avoided, and the grading ring does not easily cause device breakdown when voltage mutates, and significantly improves equipment global reliability energy.
Description
Technical field
The invention belongs to grading ring technical fields, and in particular to super extra-high voltage grading ring and its production technology.
Background technique
Grading ring is one of the important devices on high-tension apparatus, for improving the circular portion of voltage's distribiuting on insulator
Part, main function are to press, and being suitable for voltage form is exchange, and high-pressure uniform can be distributed in around object, guaranteed in annular
There is no potential difference between each position, to achieve the effect that press.
The traditional material of grading ring is aluminium alloy and stainless steel at present, under super extra-high voltage, due to nothing inside metal material
Electric field, grading ring are easy to cause component failure when the voltage jump under super extra-high voltage environment there are potential difference.
Summary of the invention
The present invention existing grading ring material be easy to cause grading ring under super extra-high voltage potential difference, failure aiming at the problem that,
A kind of super extra-high voltage grading ring and its production technology are provided, due to the use of semiconductor material of the present invention, it is produced
Pressure ring is internal under super extra-high voltage, and there are electric fields, fundamentally avoid potential difference problem, and the grading ring occurs in voltage
Device breakdown is not easily caused when mutation, significantly improves equipment global reliability energy.
The present invention adopts the following technical scheme:
A kind of super extra-high voltage grading ring, super extra-high voltage of the present invention is mainly the voltage of 550-1100kV, including annular in shape
Grading ring ontology, the grading ring ontology are prepared by semiconductor material, and the grading ring is originally coaxially provided with aluminium ring in vitro, institute
Uniformly distributed several connecting rods in the annular space between grading ring ontology and aluminium ring are stated, and the extension line of the connecting rod is excessively described equal
The center of circle of pressure ring ontology and aluminium ring.
Preferably, the outer circumference surface of the grading ring ontology corresponds at the position of the connecting rod and is equipped with for plugging
State the mounting base of connecting rod, and the head end of the connecting rod is inserted in the mounting base, the tail end of the connecting rod with it is described
The inner peripheral surface of aluminium ring is fixedly connected.
Preferably, the semiconductor material is prepared using the raw material of following component: by weight percentage, graphite
10-25%, graphene 0.01-0.5%, friction material phenolic resin 25-45%, surplus are modified SiO2。
Preferably, the graphite is specially amorphous graphite or natural flake graphite, and natural flake graphite is usually used in brush use
Graphite.
Preferably, the graphene is industrial multi-layer graphene.
Preferably, the industrial multi-layer graphene with a thickness of 3.4-8.0nm, 5-10 layers of the number of plies, 5-50 μm of lamella diameter.
Preferably, the modified SiO2For the modified SiO in silane coupling agent surface2, KH560 can be selected in silane coupling agent.
Further, the grading ring body surface prepares Al-Ag composite coating using magnetron co-sputtering process, described
In Al-Ag composite coating by weight percentage, Ag content is 15-30 wt%, and Al content is 70-85 wt%.
Further, the specific preparation process of the Al-Ag composite coating is as follows: the grading ring ontology is cleaned
Dry after processing, then using d.c. sputtering mode is used, Al target and purity with purity higher than 99.99 % are higher than 99.99 %
Ag target be sputtering source, using argon gas as sputter gas, sputtering pressure be 0.5-1 Pa, be sputtered onto the thickness of Al-Ag composite coating
For 500-1000 nm.
The production technology of above-mentioned super extra-high voltage grading ring, comprising the following steps:
(1) by weight percent stock graphite, graphene, friction material phenolic resin and modified SiO2；
(2) raw material of step (1) is mixed and is milled to fine size in 200 mesh and containing 200 mesh, the mixing grinds mixed using dry method
Conjunction is ground, gained powder dry 6 ~ 10h at 40-60 DEG C after mixing is ground；
(3) powder obtained by step (2) is fitted into the compression molding die of grading ring, progress is hot-forming, and forming temperature is
170-240 DEG C, briquetting pressure is that 15~35MPa keeps the 50~80min of briquetting pressure after reaching the forming temperature,
It is i.e. plastic to obtain grading ring.
Further, the mixing is ground is ground using ball milling, impact grinding, vibromill or revolving cylinder.
Beneficial effects of the present invention are as follows:
Through detecting, the grading ring that semiconductor material of the present invention is prepared is had the following characteristics that
1. conductivity does not have potential difference under super extra-high voltage environment, is not easy the mistake that is broken down by high-voltage in 0.5-5s/m, test display
Effect.
This is also improvement purpose of the invention, the selection and its dosage of each component in semiconductor material provided by the present invention
For proportion so that grading ring keeps good conductivity, there are electric fields for grading ring material internal, fundamentally solve potential difference and ask
Topic, grading ring are not easy the failure that is broken down by high-voltage, Performance And Reliability of the manufactured grading ring under super extra-high voltage service condition
It is superior to traditional material.
In addition, semiconductor material provided by the present invention can not only solve the problems such as potential difference, also show good
The mechanical properties such as intensity, thermal expansion can satisfy the industry requirement of grading ring:
2. three-point bending resistance intensity has in 120-240 MPa, material compared with high-flexural strength.
3. (20-80 DEG C) of linear expansion coefficient is 0.20-0.3 × 10-4/ DEG C, with disc insulator composite material (high score
Son+Al2O3) thermal expansion coefficient is close.
4. material shrinkage is 0.4-0.6%, material shrinkage is small, can facilitate and form more accurate part and size
Bigger part.
5. density of material is 1.8~2.2 g/cm3。
6. Tensile strength has in 170-250 MPa, material compared with high-tensile.
It in summary it can be seen, the comprehensive performance for the grading ring that semiconductor material of the invention produces is substantially better than tradition
Grading ring material complies fully with the requirement of grading ring.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that embodiment 1 surpasses extra-high voltage grading ring.
Specific embodiment
In order to keep technical purpose of the invention, technical scheme and beneficial effects clearer, combined with specific embodiments below
Technical solution of the present invention is further illustrated.
Embodiment 1
As shown in Figure 1, a kind of super extra-high voltage grading ring, including grading ring ontology 1 annular in shape, the grading ring ontology 1 is by half
Conductor material is prepared, and aluminium ring 2 is coaxially provided with outside the grading ring ontology 1, between the grading ring ontology 1 and aluminium ring 2
Uniformly distributed 4 connecting rods 3 in annular space, and the center of circle of the extension line of the connecting rod 3 excessively described grading ring ontology 1 and aluminium ring 2.
The fixed form of the connecting rod are as follows: the outer circumference surface of the grading ring ontology 1 correspond to the connecting rod 3 position at be equipped with
For plugging the mounting base 4 of the connecting rod 3, and the head end of the connecting rod 3 is inserted in the mounting base 4, the connection
The tail end of bar 3 is fixedly connected with the inner peripheral surface of the aluminium ring 2.
Embodiment 2
Embodiment 2 difference from example 1 is that, the grading ring body surface using magnetron co-sputtering process prepare
The specific preparation process of Al-Ag composite coating, the Al-Ag composite coating is as follows: the grading ring ontology is carried out at cleaning
It is dry after reason that (specific cleaning drying process is as follows: successively 20 minutes ultrasonic in acetone, ultrasound 20 minutes, go in dehydrated alcohol
Ultrasound 10 minutes, are then dried for standby for 60 DEG C in ionized water), then using d.c. sputtering mode is used, when sputtering, loads part
Basal disc rotation, sputtering process do not heat substrate, and the Al target and purity with purity higher than 99.99 % are higher than 99.99 %
Ag target is sputtering source, and using argon gas as sputter gas, sputtering pressure is 0.5-1 Pa, adjusts Ag target and Al target sputtering power is closed
Suitable Ag-Al content, preferably by weight percentage, Ag content are 15-30 wt%, and Al content is 70-85 wt%, are sputtered onto
Al-Ag composite coating with a thickness of 500-1000 nm.
In following embodiment it is used industry multi-layer graphene be purchased from Suzhou Tan Feng scientific & technical corporation；
Friction material used is purchased from Shandong Laiwu Runda Chemical Co., Ltd. with phenolic resin in following embodiment, specially rubs
Material phenolic resin RD-902；
Embodiment 3
The grading ring ontology of the super extra-high voltage grading ring of embodiment 1 is prepared using the semiconductor material of following component:
Ingredient: amorphous graphite 16.75 kg, industrial 0.25 kg of multi-layer graphene, friction material 50 kg of phenolic resin, silane
The SiO of coupling agent treatment2 33 kg。
Specific production technology is as follows: above-mentioned ingredient is ground using ball milling mixing, is then taken under sieve using the sieving of 200 mesh screens
Object is packed into the mould heat pressure molding of production grading ring, briquetting pressure: 30 MPa, forming temperature: 230 DEG C, in 230 DEG C of temperature
The lower dwell time will be 50 minutes.
The performance of prepared grading ring is as follows: conductivity: 1.08s/m；Bending strength: 128.31MPa；Tensile strength 195
MPa；Linear expansion coefficient: 0.22 × 10-4/℃；Material shrinkage: 0.45%；Density of material: 1.84g/cm3。
Embodiment 4
The grading ring ontology of the super extra-high voltage grading ring of embodiment 1 is prepared using the semiconductor material of following component:
Ingredient: brush 11.6 kg of graphite, industrial 0.4 kg of multi-layer graphene, friction material 53 kg of phenolic resin, silicon
The SiO of alkane coupling agent treatment2 35 kg。
Specific production technology is as follows: above-mentioned ingredient is ground using ball milling mixing, is then taken under sieve using the sieving of 230 mesh screens
Object is packed into the mould heat pressure molding of production grading ring, briquetting pressure: 20 MPa, forming temperature: 190 DEG C, in 190 DEG C of temperature
The lower dwell time will be 65 minutes.
The performance of material prepared is as follows: conductivity: 0.8 s/m；Bending strength: 145.65 MPa；Tensile strength 215
MPa；Linear expansion coefficient: 0.23 × 10-4/℃；Material shrinkage: 0.42%；Density of material: 1.88g/cm3。
It should be noted last that: technical solution of the present invention that the above embodiments are only illustrative and not limiting is any right
The equivalent replacement and do not depart from the modification of spirit and scope of the invention or locally replace that the present invention carries out, should all cover in this hair
Within bright protective scope of the claims.
Claims (10)
1. a kind of super extra-high voltage grading ring, including grading ring ontology annular in shape, which is characterized in that the grading ring ontology is by half
Conductor material is prepared, and the grading ring is originally coaxially provided with aluminium ring, the annular between the grading ring ontology and aluminium ring in vitro
Uniformly distributed several connecting rods in interval, and the center of circle of the extension line of the connecting rod excessively described grading ring ontology and aluminium ring.
2. super extra-high voltage grading ring according to claim 1, which is characterized in that the outer circumference surface pair of the grading ring ontology
The mounting base for plugging the connecting rod is equipped at the position of connecting rod described in Ying Yu, and the head end of the connecting rod is inserted in
In the mounting base, the tail end of the connecting rod is fixedly connected with the inner peripheral surface of the aluminium ring.
3. super extra-high voltage grading ring according to claim 1 or 2, it is characterised in that: the semiconductor material is using as follows
The raw material of component is prepared: by weight percentage, graphite 10-25%, graphene 0.01-0.5%, friction material phenolic aldehyde
Resin 25-45%, surplus are modified SiO2。
4. super extra-high voltage grading ring according to claim 3, it is characterised in that: the graphite is specially amorphous graphite or piece
Shape graphite.
5. super extra-high voltage grading ring according to claim 3 or 4, it is characterised in that: the graphene is industrial multilayer stone
Black alkene.
6. super extra-high voltage grading ring according to claim 5, it is characterised in that: it is described industry multi-layer graphene with a thickness of
3.4-8.0nm, 5-10 layers of the number of plies, 5-50 μm of lamella diameter.
7. the super extra-high voltage grading ring according to claim 3 or 5, it is characterised in that: the modified SiO2For silane coupling agent
Surface is modified SiO2。
8. super extra-high voltage grading ring according to claim 1 or 2, it is characterised in that: the grading ring body surface uses
Magnetron co-sputtering process prepares Al-Ag composite coating, and in the Al-Ag composite coating by weight percentage, Ag content is 15-
30 wt%, Al content are 70-85 wt%.
9. super extra-high voltage grading ring according to claim 8, which is characterized in that the specific system of the Al-Ag composite coating
Standby technique is as follows: will be dry after grading ring ontology progress cleaning treatment, then using d.c. sputtering mode is used, with purity
The Ag target of Al target and purity higher than 99.99 % higher than 99.99 % is sputtering source, using argon gas as sputter gas, sputtering pressure
For 0.5-1 Pa, be sputtered onto Al-Ag composite coating with a thickness of 500-1000 nm.
10. the production technology of the described in any item super extra-high voltage grading rings of claim 3 to 7, it is characterised in that: including following step
It is rapid:
(1) by weight percent stock graphite, graphene, friction material phenolic resin and modified SiO2；
(2) raw material of step (1) is mixed and is milled to fine size in 200 mesh and containing 200 mesh, the mixing grinds mixed using dry method
Conjunction is ground, gained powder dry 6 ~ 10h at 40-60 DEG C after mixing is ground；
(3) powder obtained by step (2) is fitted into the compression molding die of grading ring, progress is hot-forming, and forming temperature is
170-240 DEG C, briquetting pressure is that 15~35MPa keeps the 50~80min of briquetting pressure after reaching the forming temperature,
It is i.e. plastic to obtain grading ring.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910292905.3A CN110010314B (en) | 2019-04-12 | 2019-04-12 | Ultra-high voltage grading ring and production process thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910292905.3A CN110010314B (en) | 2019-04-12 | 2019-04-12 | Ultra-high voltage grading ring and production process thereof |
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| CN110010314B CN110010314B (en) | 2020-08-04 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201490575U (en) * | 2009-05-06 | 2010-05-26 | 施耐德电器工业公司 | Structure for improving electric field |
| CN203881814U (en) * | 2014-05-30 | 2014-10-15 | 国家电网公司 | Adaptive voltage equalizing apparatus |
| CN205335020U (en) * | 2015-12-31 | 2016-06-22 | 中国西电电气股份有限公司 | 750kV exchanges arrester |
| WO2018024441A1 (en) * | 2016-08-04 | 2018-02-08 | Siemens Aktiengesellschaft | Insulator |
-
2019
- 2019-04-12 CN CN201910292905.3A patent/CN110010314B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201490575U (en) * | 2009-05-06 | 2010-05-26 | 施耐德电器工业公司 | Structure for improving electric field |
| CN203881814U (en) * | 2014-05-30 | 2014-10-15 | 国家电网公司 | Adaptive voltage equalizing apparatus |
| CN205335020U (en) * | 2015-12-31 | 2016-06-22 | 中国西电电气股份有限公司 | 750kV exchanges arrester |
| WO2018024441A1 (en) * | 2016-08-04 | 2018-02-08 | Siemens Aktiengesellschaft | Insulator |
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