CN110010314B - Ultra-high voltage grading ring and production process thereof - Google Patents
Ultra-high voltage grading ring and production process thereof Download PDFInfo
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- CN110010314B CN110010314B CN201910292905.3A CN201910292905A CN110010314B CN 110010314 B CN110010314 B CN 110010314B CN 201910292905 A CN201910292905 A CN 201910292905A CN 110010314 B CN110010314 B CN 110010314B
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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Abstract
The invention provides an ultra-high voltage grading ring and a production process thereof, aiming at the problem that the potential difference and the failure of the grading ring under ultra-high voltage are easily caused by the existing grading ring material. Due to the use of the semiconductor material, the produced grading ring has an electric field inside under ultrahigh and ultrahigh voltage, so that the potential difference problem is fundamentally avoided, and the grading ring is not easy to cause device breakdown when the voltage is suddenly changed, so that the integral reliability of the equipment is obviously improved.
Description
Technical Field
The invention belongs to the technical field of grading rings, and particularly relates to an ultra-high voltage grading ring and a production process thereof.
Background
The grading ring is one of important devices on high-voltage equipment, is a circular ring-shaped component for improving voltage distribution on an insulator, mainly has the function of grading, is suitable for alternating current in a voltage form, can uniformly distribute high voltage around an object, and ensures that no potential difference exists between every two annular parts, thereby achieving the effect of grading.
The traditional materials of the existing grading ring are aluminum alloy and stainless steel, and under ultrahigh voltage, the grading ring has potential difference due to no electric field in the metal material, so that the device is easy to lose efficacy when voltage suddenly changes under the ultrahigh voltage environment.
Disclosure of Invention
The invention provides an extra-high voltage grading ring and a production process thereof, aiming at the problem that the potential difference and the failure of the grading ring are easily caused by the existing grading ring material under the ultra-high voltage.
The invention adopts the following technical scheme:
the invention relates to an ultra-high voltage grading ring, which mainly adopts a voltage of 550-plus 1100kV and comprises an annular grading ring body, wherein the grading ring body is prepared from a semiconductor material, an aluminum ring is coaxially arranged outside the grading ring body, a plurality of connecting rods are uniformly distributed in an annular interval between the grading ring body and the aluminum ring, and extension lines of the connecting rods pass through the centers of circles of the grading ring body and the aluminum ring.
Preferably, the position of the outer circumferential surface of the grading ring body, which corresponds to the connecting rod, is provided with a mounting seat for inserting the connecting rod, the head end of the connecting rod is inserted into the mounting seat, and the tail end of the connecting rod is fixedly connected with the inner circumferential surface of the aluminum ring.
Preferably, the semiconductor material is prepared by adopting the following raw materials: by weight percentage, 10-25% of graphite, 0.01-0.5% of graphene, 25-45% of phenolic resin for friction material and the balance of modified SiO2。
Preferably, the graphite is in particular earthy graphite or natural flake graphite, which is commonly used for graphite for brushes.
Preferably, the graphene is industrial multilayer graphene.
Preferably, the thickness of the industrial multi-layer graphene is 3.4-8.0nm, the number of layers is 5-10, and the diameter of each layer is 5-50 μm.
Preferably, the modified SiO2For surface modification of SiO by silane coupling agent2The silane coupling agent can be KH 560.
Further, the surface of the grading ring body is prepared into an Al-Ag composite coating by adopting a magnetron co-sputtering process, wherein the Al-Ag composite coating comprises 15-30 wt% of Ag and 70-85 wt% of Al in percentage by weight.
Further, the specific preparation process of the Al-Ag composite coating is as follows: cleaning and drying the grading ring body, and then adopting a direct current sputtering mode, taking an Al target with the purity higher than 99.99% and an Ag target with the purity higher than 99.99% as sputtering sources, taking argon as sputtering gas, sputtering at the pressure of 0.5-1 Pa until the thickness of the Al-Ag composite coating is 500-1000 nm.
The production process of the extra-high voltage grading ring comprises the following steps:
(1) preparing graphite, graphene, phenolic resin for friction material and modified SiO according to the weight percentage2；
(2) Mixing and grinding the raw materials in the step (1) until the particle size is smaller than 200 meshes and the content is 200 meshes, mixing and grinding by a dry method, and drying the powder obtained after mixing and grinding at 40-60 ℃ for 6-10 h;
(3) and (3) putting the powder obtained in the step (2) into a compression molding mold of the grading ring, performing hot-press molding at the molding temperature of 170-240 ℃ and the molding pressure of 15-35 MPa, and after the molding temperature is reached, keeping the molding pressure for 50-80 min to obtain the grading ring.
Further, the mixing and grinding adopts ball milling, impact milling, vibration milling or rotary drum milling.
The invention has the following beneficial effects:
through detection, the grading ring prepared from the semiconductor material has the following characteristics:
①, the conductivity is 0.5-5s/m, the test shows that there is no potential difference under the ultra-high voltage environment, it is not easy to be broken down by high voltage.
The grading ring material provided by the invention has the advantages that the grading ring keeps good conductivity due to the selection of components and the dosage proportion thereof, an electric field exists in the grading ring material, the potential difference problem is fundamentally solved, the grading ring is not easy to breakdown and lose efficacy under high voltage, and the performance and the reliability of the manufactured grading ring under the ultra-high voltage service condition are superior to those of the traditional material.
In addition, the semiconductor material provided by the invention not only can solve the problems of potential difference and the like, but also shows good mechanical properties such as strength, thermal expansion and the like, and can meet the industrial use requirements of the grading ring:
the bending strength at the three points of ② is 120-240 MPa, and the material has higher bending strength.
③ the material has a coefficient of linear expansion (20-80 deg.C) of 0.20-0.3 × 10-4V. degree C, composite material (macromolecule + Al) with basin type insulator2O3) The coefficients of thermal expansion are close.
④ has a material shrinkage of 0.4-0.6% and a small material shrinkage, and can be used for conveniently molding more precise parts and parts with larger sizes.
⑤ the density of the material is 1.8-2.2 g/cm3。
⑥ the tensile strength of the material is 170-250MPa, and the material has higher tensile strength.
In conclusion, the comprehensive performance of the grading ring produced by the semiconductor material is obviously superior to that of the traditional grading ring material, and the use requirement of the grading ring is completely met.
Drawings
Fig. 1 is a schematic structural diagram of an extra-high voltage grading ring in embodiment 1.
Detailed Description
In order to make the technical purpose, technical solutions and advantageous effects of the present invention more clear, the technical solutions of the present invention are further described below with reference to specific embodiments.
Example 1
As shown in figure 1, an extra-high voltage grading ring comprises a ring-shaped grading ring body 1, wherein the grading ring body 1 is made of a semiconductor material, an aluminum ring 2 is coaxially arranged outside the grading ring body 1, 4 connecting rods 3 are uniformly distributed in an annular interval between the grading ring body 1 and the aluminum ring 2, and an extension line of each connecting rod 3 passes through the circle centers of the grading ring body 1 and the aluminum ring 2. The fixing mode of the connecting rod is as follows: the position of the outer circumferential surface of the grading ring body 1, corresponding to the connecting rod 3, is provided with a mounting seat 4 for inserting the connecting rod 3, the head end of the connecting rod 3 is inserted into the mounting seat 4, and the tail end of the connecting rod 3 is fixedly connected with the inner circumferential surface of the aluminum ring 2.
Example 2
The difference between the embodiment 2 and the embodiment 1 is that the surface of the grading ring body adopts a magnetron co-sputtering process to prepare the Al-Ag composite coating, and the specific preparation process of the Al-Ag composite coating is as follows: cleaning and drying the grading ring body (specifically, cleaning and drying operations are as follows, ultrasonic treatment is carried out in acetone for 20 minutes, ultrasonic treatment is carried out in absolute ethyl alcohol for 20 minutes, ultrasonic treatment is carried out in deionized water for 10 minutes, and then drying is carried out at 60 ℃ for standby), then a direct current sputtering mode is adopted, a base plate for loading parts is rotated during sputtering, a substrate is not heated in the sputtering process, an Al target with the purity higher than 99.99% and an Ag target with the purity higher than 99.99% are taken as sputtering sources, argon is taken as sputtering gas, the sputtering pressure is 0.5-1 Pa, the sputtering power of the Ag target and the Al target is adjusted to obtain the proper Ag-Al content, preferably, the Ag content is 15-30 wt%, the Al content is 70-85 wt%, and the thickness of the Al-Ag composite coating is 500-1000 nm.
The industrial multilayer graphene used in the examples below was purchased from suzhou carbonfeng technologies;
the phenolic resin for friction materials used in the following examples was obtained from Shandong Laiwu Runda chemical Co., Ltd., and specifically was phenolic resin RD-902 for friction materials;
example 3
The grading ring body of the ultra-high voltage grading ring in the embodiment 1 is prepared from the following semiconductor materials:
preparing materials: 16.75 kg of soil graphite, 0.25 kg of industrial multi-layer graphene, 50 kg of phenolic resin for friction materials and SiO treated by silane coupling agent233 kg。
The specific production process comprises the following steps: the ingredients are mixed and ground by ball milling, sieved by a 200-mesh screen to obtain undersize products, and then filled into a die for producing the grading ring for hot press molding, wherein the molding pressure is as follows: 30 MPa, molding temperature: at 230 ℃ and a dwell time of 50 minutes at a temperature of 230 ℃.
The prepared grading ring has the following properties of 1.08s/m of electric conductivity, 128.31MPa of bending strength, 195MPa of tensile strength and 0.22 × 10 of linear expansion coefficient-4/° c; shrinkage rate of the material: 0.45 percent; material density: 1.84g/cm3。
Example 4
The grading ring body of the ultra-high voltage grading ring in the embodiment 1 is prepared from the following semiconductor materials:
preparing materials: 11.6 kg of graphite for a brush, 0.4 kg of industrial multi-layer graphene, 53kg of phenolic resin for a friction material, and SiO treated with a silane coupling agent235 kg。
The specific production process comprises the following steps: the ingredients are mixed and ground by ball milling, sieved by a 230-mesh screen, and then filled into a die for producing a grading ring for hot press molding, wherein the molding pressure is as follows: 20 MPa, molding temperature: the dwell time at 190 ℃ was 65 minutes at a temperature of 190 ℃.
The prepared material has the following properties of 0.8 s/m of electric conductivity, 145.65 MPa of bending strength, 215MPa of tensile strength and 0.23 × 10 of linear expansion coefficient-4/° c; shrinkage rate of the material: 0.42 percent; material density: 1.88g/cm3。
Finally, it should be noted that: the above embodiments are merely illustrative and not restrictive of the technical solutions of the present invention, and any equivalent substitutions and modifications or partial substitutions made without departing from the spirit and scope of the present invention should be included in the scope of the claims of the present invention.
Claims (7)
1. An ultra-high voltage grading ring comprises an annular grading ring body and is characterized in that the grading ring body is made of a semiconductor material, an aluminum ring is coaxially arranged outside the grading ring body, a plurality of connecting rods are uniformly distributed in an annular interval between the grading ring body and the aluminum ring, and an extension line of each connecting rod passes through the circle center of the grading ring body and the circle center of the aluminum ring; the semiconductor material is prepared from the following raw materials: by weight percentage, 10-25% of graphite, 0.01-0.5% of graphene, 25-45% of phenolic resin for friction material and the balance of silane coupling agent surface modified SiO2(ii) a The surface of the grading ring body is prepared into the Al-Ag composite coating by adopting a magnetron co-sputtering process, wherein the Al-Ag composite coating comprises 15-30 wt% of Ag and 70-85 wt% of Al in percentage by weight.
2. The ultra-high voltage grading ring according to claim 1, wherein a mounting seat for inserting the connecting rod is arranged at a position of the outer circumferential surface of the grading ring body corresponding to the connecting rod, the head end of the connecting rod is inserted into the mounting seat, and the tail end of the connecting rod is fixedly connected with the inner circumferential surface of the aluminum ring.
3. The ultra-high voltage grading ring according to claim 1, wherein: the graphite is specifically earthy graphite or flake graphite.
4. The ultra-high voltage grading ring according to claim 1, wherein: the graphene is industrial multilayer graphene.
5. The ultra-high voltage grading ring according to claim 4, wherein: the thickness of the industrial multilayer graphene is 3.4-8.0nm, the number of layers is 5-10, and the diameter of a lamella is 5-50 mu m.
6. The ultra-high voltage grading ring according to claim 1, wherein the specific preparation process of the Al-Ag composite coating is as follows: cleaning and drying the grading ring body, and then adopting a direct current sputtering mode, taking an Al target with the purity higher than 99.99% and an Ag target with the purity higher than 99.99% as sputtering sources, taking argon as sputtering gas, sputtering at the pressure of 0.5-1 Pa until the thickness of the Al-Ag composite coating is 500-1000 nm.
7. The production process of the extra-high voltage grading ring of any one of claims 1 to 6, characterized in that: the method comprises the following steps:
(1) preparing graphite, graphene, phenolic resin for friction material and modified SiO according to the weight percentage2；
(2) Mixing and grinding the raw materials in the step (1) until the particle size is smaller than 200 meshes and the content is 200 meshes, mixing and grinding by a dry method, and drying the powder obtained after mixing and grinding at 40-60 ℃ for 6-10 h;
(3) and (3) putting the powder obtained in the step (2) into a compression molding die of the grading ring, performing hot-press molding at the molding temperature of 170-240 ℃ and the molding pressure of 15-35 MPa, and after the molding temperature is reached, keeping the molding pressure for 50-80 min to obtain the grading ring body through molding.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201490575U (en) * | 2009-05-06 | 2010-05-26 | 施耐德电器工业公司 | Structure for improving electric field |
| CN203881814U (en) * | 2014-05-30 | 2014-10-15 | 国家电网公司 | Adaptive voltage equalizing apparatus |
| CN205335020U (en) * | 2015-12-31 | 2016-06-22 | 中国西电电气股份有限公司 | 750kV exchanges arrester |
| WO2018024441A1 (en) * | 2016-08-04 | 2018-02-08 | Siemens Aktiengesellschaft | Insulator |
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2019
- 2019-04-12 CN CN201910292905.3A patent/CN110010314B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201490575U (en) * | 2009-05-06 | 2010-05-26 | 施耐德电器工业公司 | Structure for improving electric field |
| CN203881814U (en) * | 2014-05-30 | 2014-10-15 | 国家电网公司 | Adaptive voltage equalizing apparatus |
| CN205335020U (en) * | 2015-12-31 | 2016-06-22 | 中国西电电气股份有限公司 | 750kV exchanges arrester |
| WO2018024441A1 (en) * | 2016-08-04 | 2018-02-08 | Siemens Aktiengesellschaft | Insulator |
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