CN109995235B - Intelligent power module and electrical equipment - Google Patents
Intelligent power module and electrical equipment Download PDFInfo
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- CN109995235B CN109995235B CN201910359199.XA CN201910359199A CN109995235B CN 109995235 B CN109995235 B CN 109995235B CN 201910359199 A CN201910359199 A CN 201910359199A CN 109995235 B CN109995235 B CN 109995235B
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- bootstrap switch
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- power module
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
Abstract
The invention discloses an intelligent power module and electrical equipment, wherein the intelligent power module comprises an inverter circuit and a driving chip, the driving chip comprises a bootstrap circuit and a driving circuit for driving the inverter circuit to work, and the bootstrap circuit comprises: the device comprises at least one bootstrap switch circuit, at least one comparison circuit corresponding to the at least one bootstrap switch circuit one by one and at least one control circuit corresponding to the at least one comparison circuit one by one, wherein each control circuit is used for controlling the corresponding bootstrap switch circuit according to the comparison result output by the corresponding comparison circuit so as to adjust the charging speed of the bootstrap switch tube in the bootstrap switch circuit. According to the intelligent power module, the bootstrap capacity of the intelligent power module can be improved through adjusting the charging speed of the bootstrap switch tube in the bootstrap switch circuit.
Description
Technical Field
The invention relates to the technical field of electric appliances, in particular to an intelligent power module and electric equipment.
Background
IPM (Intelligent Power Module ) is a power driven product that combines power electronics technology and integrated circuit technology. The IPM integrates the power switching device and the high voltage driving circuit, and incorporates fault detection circuits such as overvoltage, overcurrent, overheat, etc.
Currently, IPM achieves bootstrapping by two schemes: 1) Bootstrap is realized through an external diode, and the defects of the bootstrap are that the size of a module is enlarged, the wiring of the module is complex, parasitic parameters are easy to generate, and noise is generated in the operation of the module;
2) An HVIC (High Voltage Integrated Circuit ) chip is disposed in the IPM, and a bootstrap circuit including a MOS (metal oxide semiconductor) tube is integrated in the HVTC chip to realize a bootstrap function by controlling the turn-on of the gate of the MOS tube, and the IPM has a circuit structure as shown in fig. 1, which has a disadvantage that the charging speed of the MOS tube cannot be controlled according to the actual requirement of the IPM.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, an object of the present invention is to provide an intelligent power module, which can adjust the charging speed of a bootstrap switch tube according to the actual requirement thereof, thereby improving the bootstrap capability.
Another object of the present invention is to propose an electrical device.
To achieve the above object, an embodiment of a first aspect of the present invention provides an intelligent power module, including an inverter circuit and a driving chip, where the driving chip includes a bootstrap circuit and a driving circuit for driving the inverter circuit to work, and the bootstrap circuit includes:
the intelligent power module comprises at least one bootstrap switch circuit, wherein each bootstrap switch circuit comprises at least two bootstrap switch tubes, the input end of each bootstrap switch circuit is connected to the low-voltage region power supply positive end of the intelligent power module, and the output end of each bootstrap switch circuit is connected to one high-voltage region power supply positive end of the intelligent power module; the first input end of each comparison circuit is connected with the input end of the corresponding bootstrap switch circuit, the second input end of each comparison circuit is connected with the output end of the corresponding bootstrap switch circuit, and each comparison circuit is used for comparing the relation between the input signal of the first input end and the input signal of the second input end and outputting a comparison result; and the control circuits are respectively connected with the output ends of the corresponding comparison circuits and the control ends of the corresponding bootstrap switch circuits and are used for controlling the corresponding bootstrap switch circuits according to the comparison results output by the corresponding comparison circuits so as to adjust the charging speed of the bootstrap switch tubes in the bootstrap switch circuits.
According to the intelligent power module provided by the embodiment of the invention, the comparison circuit is used for comparing the relation between the signals of the input end and the output end of the bootstrap switch circuit and outputting the comparison result, and the bootstrap switch circuit is further controlled by the control circuit according to the comparison result so as to adjust the charging speed of the bootstrap switch tube in the bootstrap switch circuit, so that the bootstrap capacity of the intelligent power module can be improved.
In addition, the intelligent power module according to the above embodiment of the present invention may further have the following additional technical features:
according to one embodiment of the invention, each bootstrap switching circuit comprises two bootstrap switching tubes, namely a first bootstrap switching tube and a second bootstrap switching tube, wherein the source electrode of the first bootstrap switching tube is connected with the source electrode of the second bootstrap switching tube and is connected to the low-voltage region power supply positive end of the intelligent power module, the drain electrode of the first bootstrap switching tube is connected with the drain electrode of the second bootstrap switching tube and is connected to one high-voltage region power supply positive end of the intelligent power module, and the grid electrodes of the first bootstrap switching tube and the second bootstrap switching tube are connected with corresponding control circuits; the control circuit is used for controlling the on or off of the corresponding first bootstrap switch tube and the on or off of the corresponding second bootstrap switch tube according to the comparison result output by the corresponding comparison circuit.
According to one embodiment of the present invention, the control circuit is specifically configured to: when the difference value between the voltage input by the first input end and the voltage input by the second input end of the comparison circuit is larger than a first preset difference value, controlling the first bootstrap switch tube and the second bootstrap switch tube to be both turned on; when the difference between the voltage input by the first input end and the voltage input by the second input end of the comparison circuit is larger than a second preset difference and smaller than or equal to the first preset difference, one of the first bootstrap switch tube and the second bootstrap switch tube is controlled to be turned on and the other is controlled to be turned off.
According to one embodiment of the invention, the smart power module further comprises: and one end of each bootstrap capacitor is connected with the output end of the corresponding bootstrap switch circuit, and the other end of each bootstrap capacitor is connected with the power supply negative end of one high-voltage region of the corresponding intelligent power module.
According to one embodiment of the invention, the intelligent power module comprises three bootstrap switch circuits, three comparison circuits and three control circuits.
According to one embodiment of the invention, the inverter circuit comprises a first IGBT tube, a second IGBT tube, a third IGBT tube, a fourth IGBT tube, a fifth IGBT tube and a sixth IGBT tube, wherein the first IGBT tube, the second IGBT tube and the third IGBT tube form a U-phase upper bridge arm, a V-phase upper bridge arm and a W-phase upper bridge arm, and the fourth IGBT tube, the fifth IGBT tube and the sixth IGBT tube form a U-phase lower bridge arm, a V-phase lower bridge arm and a W-phase lower bridge arm; the driving circuit comprises a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit and a sixth driving unit, wherein the input ends of the first driving unit, the second driving unit, the third driving unit, the fourth driving unit, the fifth driving unit and the sixth driving unit are respectively used as the input ends of a U-phase upper bridge arm, a V-phase upper bridge arm, a W-phase upper bridge arm, a U-phase lower bridge arm, a V-phase lower bridge arm and a W-phase lower bridge arm, and the output ends of the V-phase upper bridge arm, the W-phase lower bridge arm are respectively connected with the gates of the first IGBT tube, the second IGBT tube, the third IGBT tube, the fourth IGBT tube, the fifth IGBT tube and the sixth IGBT tube.
According to one embodiment of the present invention, the inverter circuit further includes a first antiparallel diode, a second antiparallel diode, a third antiparallel diode, a fourth antiparallel diode, a fifth antiparallel diode, a sixth antiparallel diode corresponding to the first IGBT tube, the second IGBT tube, the third IGBT tube, the fourth IGBT tube, the fifth IGBT tube, the sixth IGBT tube.
According to one embodiment of the present invention, the bootstrap switch tubes in the at least one bootstrap switch circuit each employ a high-voltage DMOS tube.
In order to achieve the above objective, an embodiment of a second aspect of the present invention provides an electrical device, including an intelligent power module according to an embodiment of the first aspect of the present invention.
According to the electrical equipment provided by the embodiment of the invention, the bootstrap capacity of the intelligent power module can be improved by adjusting the charging speed of the bootstrap switch tube in the bootstrap switch circuit by adopting the intelligent power module provided by the embodiment of the invention.
In addition, the electrical apparatus according to the above embodiment of the present invention may further have the following additional technical features:
according to one embodiment of the invention, the electrical device is an air conditioner.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a prior art smart power module;
FIG. 2 is a block diagram of a smart power module according to one embodiment of the invention;
FIG. 3 is a schematic diagram of a smart power module according to one example of the invention;
fig. 4 is a block diagram of an electrical device according to an embodiment of the present invention.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
An intelligent power module and an electrical device according to an embodiment of the present invention are described below with reference to fig. 2-4.
Fig. 2 is a block diagram of a smart power module according to one embodiment of the invention.
As shown in fig. 2, the smart power module 100 includes: a driving chip 10 and an inverter circuit 20. The driving chip 10 includes a bootstrap circuit 11 and a driving circuit 12 for driving the inverter circuit 20 to operate, wherein the bootstrap circuit 11 includes: at least one bootstrap switch circuit 111, at least one comparison circuit 112, and at least one control circuit 113.
Wherein, each bootstrap switch circuit 111 includes at least two bootstrap switch tubes (as shown in fig. 2, only two bootstrap switch tubes, namely a first bootstrap switch tube M1 and a second bootstrap switch tube M2), an input end of each bootstrap switch circuit 111 is connected to the low-voltage region power supply positive terminal VDD of the intelligent power module 100, and an output end is connected to one high-voltage region power supply positive terminal UVB of the intelligent power module 100; at least one comparison circuit 112 is in one-to-one correspondence with at least one bootstrap switch circuit 111, a first input terminal of each comparison circuit 112 is connected to an input terminal of the corresponding bootstrap switch circuit 111, a second input terminal of each comparison circuit 112 is connected to an output terminal of the corresponding bootstrap switch circuit 111, and each comparison circuit 112 is configured to compare a relationship between an input signal of the first input terminal and an input signal of the second input terminal and output a comparison result; at least one control circuit 113 is in one-to-one correspondence with at least one comparison circuit 112, and each control circuit 113 is respectively connected to an output end of the corresponding comparison circuit 112 and a control end of the corresponding bootstrap switch circuit 111, and is configured to control the corresponding bootstrap switch circuit 111 according to a comparison result output by the corresponding comparison circuit 112, so as to adjust a charging speed of a bootstrap switch tube in the bootstrap switch circuit 111.
In this embodiment, the bootstrap switch in the at least one bootstrap switch circuit 111 may each employ a high-voltage DMOS (Double Diffused Metal Oxide Semiconductor, double-diffused metal oxide semiconductor) tube.
Specifically, in practical application of the intelligent power module 100, referring to fig. 2, taking a case that a bootstrap switch circuit 111 (including two bootstrap switch tubes M1 and M2) is correspondingly disposed in U as an example, an input signal of a first input end of the corresponding comparison circuit 112 is an input voltage of a low-voltage region power supply positive end VDD of the intelligent power module 100, an input signal of a second input end of the comparison circuit 112 is an output voltage of a U-phase high-voltage region power supply positive end UVB of the intelligent power module 100, the comparison circuit 112 can detect and compare a relationship between the input voltage of the VDD end and the output voltage of the UVB end in real time, and output a comparison result to the corresponding control circuit 113, and after receiving the comparison result, the control circuit 113 controls the bootstrap switch circuit 111, that is, on or off control is performed on the first bootstrap switch tube M1 and the second bootstrap switch tube M2. For example, if the input voltage of the low-voltage region power supply positive terminal VDD is smaller than the output voltage of the U-phase high-voltage region power supply positive terminal UVB, the control circuit 113 may control the first bootstrap switch tube M1 or the second bootstrap switch tube M2 to be turned on, so that the output voltage of the low-voltage region power supply positive terminal VDD realizes bootstrap through the turned-on first bootstrap switch tube M1 or second bootstrap switch tube M2, so that the output voltage of the U-phase high-voltage region power supply positive terminal UVB of the intelligent power module 100 meets the requirement; if the input voltage of the low-voltage region power supply positive terminal VDD is far smaller than the output voltage of the U-phase high-voltage region power supply positive terminal UVB, the control circuit 113 may control the first bootstrap switch tube M1 and the second bootstrap switch tube M2 to be turned on simultaneously, so that the output voltage of the low-voltage region power supply positive terminal VDD is bootstrapped through the turned-on first bootstrap switch tube M1 and second bootstrap switch tube M2 at the same time, thereby accelerating the charging speed, and enabling the output voltage of the U-phase high-voltage region power supply positive terminal UVB of the intelligent power module 100 to rapidly meet the requirements.
It can be appreciated that when the bootstrap switch circuit 111 includes a plurality of bootstrap switch tubes, when the input voltage of the low-voltage region power supply positive terminal VDD is far smaller than the output voltage of the U-phase high-voltage region power supply positive terminal UVB, the corresponding control circuit 113 may control the plurality of bootstrap switch tubes in the bootstrap switch circuit 111 to be turned on so as to increase the charging speed, thereby improving the bootstrap capability of the intelligent power module 100.
According to the intelligent power module provided by the embodiment of the invention, the bootstrap capacity of the intelligent power module can be improved by adjusting the charging speed of the bootstrap switch tube in the bootstrap switch circuit.
In one embodiment of the present invention, as shown in fig. 2, each bootstrap switch circuit 111 may include two bootstrap switch tubes, denoted as a first bootstrap switch tube M1 and a second bootstrap switch tube M2, where a source of the first bootstrap switch tube M1 is connected to a source of the second bootstrap switch tube M2 and is connected to the low voltage region power supply positive terminal VDD of the intelligent power module 100, a drain of the first bootstrap switch tube M1 is connected to a drain of the second bootstrap switch tube M2 and is connected to one high voltage region power supply positive terminal of the intelligent power module 100, and a gate of the first bootstrap switch tube M1 and a gate of the second bootstrap switch tube M2 are connected to the corresponding control circuit 113. The control circuit 113 is configured to control on or off of the corresponding first bootstrap switch tube M1 and control on or off of the corresponding second bootstrap switch tube M2 according to the comparison result output by the corresponding comparison circuit 112.
Further, referring to fig. 2, when the control circuit 113 controls the on or off of the corresponding first bootstrap switch tube M1 and controls the on or off of the corresponding second bootstrap switch tube M2 according to the comparison result output by the corresponding comparison circuit 112, the control circuit may be specifically configured to:
when the difference between the voltage input by the first input end and the voltage input by the second input end of the comparison circuit 112 is larger than a first preset difference, the first bootstrap switch tube M1 and the second bootstrap switch tube M2 are controlled to be opened so as to accelerate the charging speed of the VDD end to the power supply positive end of the corresponding high-voltage region; when the difference between the voltage input by the first input end and the voltage input by the second input end of the comparison circuit 112 is greater than the second preset difference and less than or equal to the first preset difference, one of the first bootstrap switch tube M1 and the second bootstrap switch tube M2 is controlled to be turned on and the other is controlled to be turned off. The first preset difference value can be larger than the second preset difference value, and the values of the first preset difference value and the second preset difference value can be calibrated according to the requirements.
Therefore, when the input voltage of the power supply positive end of the low-voltage area is far smaller than the output voltage of the power supply positive end of the high-voltage area, the charging speed of the bootstrap switch tube is improved by controlling the first bootstrap switch tube and the second bootstrap switch tube to be both on, and the bootstrap capacity of the intelligent power module is further improved.
In one example of the present invention, as shown in fig. 3, the intelligent power module 100 may include three bootstrap switch circuits 111, three comparison circuits 112, and three control circuits 113. In this example, the input voltage of the low-voltage region power supply positive terminal VDD of the intelligent power module 100 may be bootstrapped by each bootstrapped switch circuit 111, so as to output three high-voltage regions power supply positive terminals, which may be respectively denoted as a U-phase high-voltage region power supply positive terminal UVB, a V-phase high-voltage region power supply positive terminal VVB, and a W-phase high-voltage region power supply positive terminal WVB, so that the output voltage of the intelligent power module 100 meets the requirement.
Specifically, the three bootstrap switch circuits 111 may be referred to as a first bootstrap switch circuit 111-1, a second bootstrap switch circuit 111-2, and a third bootstrap switch circuit 111-3, respectively; the three comparison circuits 112 may be referred to as a first comparison circuit 112-1, a second comparison circuit 112-2, and a third comparison circuit 112-3, respectively; the three control circuits 113 may be referred to as a first control circuit 113-1, a second control circuit 113-2, and a third control circuit 113-3, respectively. The first bootstrap switch circuit 111-1 includes bootstrap switch transistors M1-1 and M2-1, the second bootstrap switch circuit 111-2 may include bootstrap switch transistors M1-2 and M2-2, and the third bootstrap switch circuit 111-3 may include bootstrap switch transistors M1-3 and M2-3.
Therefore, when the output voltage of the power supply positive end of the low-voltage area is far smaller than that of the power supply positive end of a certain phase of high-voltage area, the charging speed of the phase bootstrap switch tube is improved by controlling the phase bootstrap switch tube to be opened, and the bootstrap capacity of the intelligent power module is further improved.
In this example, referring to fig. 3, the substrate of each bootstrap switch may be grounded.
Further, referring to fig. 3, the intelligent power module 100 may further include: bootstrap capacitors in one-to-one correspondence with the at least one bootstrap switch circuit 111. One end of each bootstrap capacitor is connected to the output end of the corresponding bootstrap switch circuit 111, and the other end of each bootstrap capacitor is connected to a high-voltage region power supply negative end of the corresponding intelligent power module 100, where when the output end of the bootstrap switch circuit 111 is connected to a high-voltage region power supply positive end, such as UVB, the other end of the corresponding bootstrap capacitor is connected to the high-voltage region power supply negative end UVS.
Specifically, the input voltage of the low-voltage region power supply positive terminal VDD of the intelligent power module 100 may charge the bootstrap capacitor through the first bootstrap switch tube M1 and/or the second bootstrap switch tube M2 until the output voltage of the corresponding high-voltage region power supply positive terminal, such as UVB, of the intelligent power module 100 meets the actual requirement.
Referring to fig. 3, when the bootstrap switch circuit 111 is provided with three, the smart power module 100 may include: a first bootstrap capacitor C1 corresponding to the first bootstrap switch circuit 111-1, a second bootstrap capacitor C2 corresponding to the second bootstrap switch circuit 111-2, and a third bootstrap capacitor C3 corresponding to the third bootstrap switch circuit 111-3, which are connected in a manner as shown in fig. 3.
Therefore, the input voltage of the low-voltage area power supply positive end of the intelligent power module can realize the bootstrap of the output voltage of the high-voltage area power supply positive end through the bootstrap switch tube and the bootstrap capacitor.
In one example of the present invention, referring to fig. 3, the inverter circuit 20 may include a first IGBT tube (Insulated Gate Bipolar Transistor ) Q1, a second IGBT tube Q2, a third IGBT tube Q3, a fourth IGBT tube Q4, a fifth IGBT tube Q5, and a sixth IGBT tube Q6, where the first IGBT tube Q1, the second IGBT tube Q2, and the third IGBT tube Q3 form a U-phase upper leg, a V-phase upper leg, and a W-phase upper leg, and the fourth IGBT tube Q4, the fifth IGBT tube Q5, and the sixth IGBT tube Q6 form a U-phase lower leg, a V-phase lower leg, and a W-phase lower leg; the driving circuit 12 may include a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit, and a sixth driving unit, where input ends (i.e., HIN1, HIN2, HIN3, LIN1, LIN2, LIN 3) of the first driving unit, the second driving unit, the third driving unit, the fourth driving unit, the fifth driving unit, and the sixth driving unit are respectively used as input ends of a U-phase upper arm, a V-phase upper arm, a W-phase upper arm, a U-phase lower arm, a V-phase lower arm, and a W-phase lower arm, and output ends (i.e., HO1, HO2, HO3, LO1, LO2, LO 3) are respectively connected to gates of the first IGBT transistor Q1, the second IGBT transistor Q2, the third IGBT transistor Q3, the fourth IGBT transistor Q4, the fifth IGBT transistor Q5, and the sixth IGBT transistor Q6.
Further, referring to fig. 3, the inverter circuit 20 may further include a first antiparallel diode D1, a second antiparallel diode D2, a third antiparallel diode D3, a fourth antiparallel diode D4, a fifth antiparallel diode D5, and a sixth antiparallel diode D6 corresponding to the first IGBT Q1, the second IGBT Q2, the third IGBT Q3, the fourth IGBT Q4, the fifth IGBT Q5, and the sixth IGBT Q6.
The first anti-parallel diode D1, the second anti-parallel diode D2, the third anti-parallel diode D3, the fourth anti-parallel diode D4, the fifth anti-parallel diode D5, and the sixth anti-parallel diode D6 may all employ FRD diodes (Fast Recovery Diode, fast recovery diodes).
The following describes a specific implementation of the driving chip 10 according to the embodiment of the present invention with reference to fig. 3:
referring to fig. 3, the driving chip 10 may be an HVIC (High Voltage Integrated Circuit ) chip, and the first driving unit is connected to an HIN1 terminal and an HO1 terminal of the HVIC chip, respectively; the second driving unit is respectively connected with the HIN2 end and the HO2 end of the HVIC chip; the third driving unit is respectively connected with the HIN3 end and the HO3 end of the HVIC chip; the fourth driving unit is respectively connected with the LIN1 end and the LO1 end of the HVIC chip; the fifth driving unit is respectively connected with the LIN2 end and the LO2 end of the HVIC chip; the sixth driving unit is respectively connected with the LIN3 end and the LO3 end of the HVIC chip.
The HIN1 end of the HVIC chip is used as the U-phase upper bridge arm input end UHIN of the intelligent power module 100; the HIN2 end of the HVIC chip is used as the V-phase upper bridge arm input end VHIN of the intelligent power module 100; the HIN3 end of the HVIC chip is used as the WHIN input end of the W-phase upper bridge arm of the intelligent power module 100; the LIN1 end of the HVIC chip is used as the U-phase lower bridge arm input end ULIN of the intelligent power module 100; the LIN2 end of the HVIC chip is used as the V-phase lower bridge arm input end VLIN of the intelligent power module 100; the LIN3 end of the HVIC chip is used as the W-phase lower bridge arm input end WLIN of the intelligent power module 100; the GND end of the HVIC chip is used as a low-voltage area power supply negative end COM of the intelligent power module 100; the VB1 end of the HVIC chip is connected with one end of the first bootstrap capacitor C1 and is used as a U-phase high-voltage area power supply positive end UVB of the intelligent power module 100; the HO1 end of the HVIC chip is connected with the grid electrode of the first IGBT tube Q1; the VS1 end of the HVIC chip is connected with the emitter of the first IGBT tube Q1, the anode of the first anti-parallel diode D1, the collector of the fourth IGBT tube Q4, the cathode of the fourth anti-parallel diode D4 and the other end of the first bootstrap capacitor C1, and is used as a U-phase high-voltage region power supply negative terminal UVS of the intelligent power module 100; the VB2 end of the HVIC chip is connected with one end of the second bootstrap capacitor C2 and is used as a V-phase high-voltage area power supply positive end VVB of the intelligent power module 100; the HO3 end of the HVIC chip is connected with the grid electrode of the third IGBT tube Q3; the VS2 end of the HVIC chip is connected with the emitter of the second IGBT tube Q2, the anode of the second anti-parallel diode D2, the collector of the fifth IGBT tube Q5, the cathode of the fifth anti-parallel diode D5 and the other end of the second bootstrap capacitor C2, and is used as a V-phase high-voltage area power supply negative end VVS of the intelligent power module 100; the VB3 end of the HVIC chip is connected with one end of the third bootstrap capacitor C3 and is used as a W-phase high-voltage area power supply positive end WVB of the intelligent power module 100; the HO3 end of the HVIC chip is connected with the grid electrode of the third IGBT tube Q3; the VS3 end of the HVIC chip is connected with the emitter of the third IGBT tube Q3, the anode of the third anti-parallel diode D3, the collector of the sixth IGBT tube Q6, the cathode of the sixth anti-parallel diode D6 and the other end of the third bootstrap capacitor C3, and is used as the W-phase high-voltage area power supply negative end WVS of the intelligent power module 100; the LO1 end of the HVIC chip is connected with the grid electrode of the fourth IGBT tube Q4; the LO2 end of the HVIC chip is connected with the grid electrode of the fifth IGBT tube Q5; the LO3 end of the HVIC chip is connected with the grid electrode of the sixth IGBT tube Q6; the emitter of the fourth IGBT Q4 is connected with the anode of the fourth anti-parallel diode D4 and is used as a U-phase low-voltage reference end UN of the intelligent power module 100; the emitter of the fifth IGBT tube Q5 is connected with the anode of the fifth anti-parallel diode D5 and is used as a V-phase low-voltage reference end VN of the intelligent power module 100; the emitter of the sixth IGBT Q6 is connected with the anode of the anti-parallel diode D6 and is used as a W-phase low-voltage reference end WN of the intelligent power module 100; the collector of the first IGBT tube Q1, the cathode of the first anti-parallel diode D1, the collector of the second IGBT tube Q2, the cathode of the second anti-parallel diode D2, the collector of the third IGBT tube Q3 and the cathode of the third anti-parallel diode D3 are connected and serve as a high voltage input end P of the intelligent power module 100, and the VCC end of the HVIC chip is connected with a low voltage region power supply positive end VDD of the intelligent power module 10; VB1 and VS1 are respectively the positive electrode and the negative electrode of a power supply of the U-phase high-voltage region, and HO1 is the output end of the U-phase high-voltage region; VB2 and VS2 are respectively the positive electrode and the negative electrode of a power supply of the V-phase high-voltage region, and HO2 is the output end of the V-phase high-voltage region; VB3 and VS3 are respectively the positive electrode and the negative electrode of the power supply of the W-phase high-voltage area, and HO3 is the output end of the W-phase high-voltage area; LO1, LO2 and LO3 are output ends of the low-voltage areas of the U phase, the V phase and the W phase respectively.
The input signals of 0V or 5V can be received by the six paths of input of U, V, W three phases of the intelligent power module 100, the input signal of 300V can be connected to the high voltage input terminal P, and the output voltage of the power supply positive terminal VDD of the low voltage region of the intelligent power module 100 is generally 15V. The input signals of 0 or 5V at the inputs HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 are transmitted to the outputs HO1, HO2, HO3 and LO1, LO2, LO3, respectively, when the output signals of HO1, HO2, HO3 are VS or vs+15v, the output signals of LO1, LO2, LO3 are 0 or 15V. The input signals of the same phase cannot be at high level at the same time, i.e., HIN1 and LIN1, HIN2 and LIN2, HIN3 and LIN3 cannot be at high level at the same time.
Specifically, in the practical application of the intelligent power module 100, taking the first bootstrap switch circuit 111-1 as an example, the first comparison circuit 112-1 can detect the input voltage of the low-voltage region power supply positive terminal VDD of the intelligent power module 100 and the output voltage of the HVIC chip VB1 terminal (U-phase high-voltage region power supply positive terminal UVB) in real time, and compare the relationship between the input voltage of the low-voltage region power supply positive terminal VDD and the output voltage of the HVIC chip VB1 terminal, when the difference between the input voltage of the low-voltage region power supply positive terminal VDD and the output voltage of the HVIC chip VB1 terminal is greater than a first preset value, the first control circuit 113-1 controls the bootstrap switch tubes M1-1 and M2-1 to be turned on, so that the low-voltage region power supply positive terminal VDD can be bootstrapped through the bootstrap switch tubes M1-1 and M2-1 at the same time, and thus the charging speed of the VDD terminal to the VB1 terminal is accelerated, so as to rapidly meet the practical requirements of the intelligent power module; when the difference between the input voltage of the low-voltage region power supply positive terminal VDD and the output voltage of the HVIC chip VB1 terminal is greater than the second preset difference and less than or equal to the first preset difference, the first control circuit 113-1 controls the bootstrap switch tube M1-1 to be turned on and the bootstrap switch tube M2-1 to be turned off, or controls the bootstrap switch tube M1-1 to be turned off and the bootstrap switch tube M2-2 to be turned on, so as to realize bootstrap.
In summary, the intelligent power module of the embodiment of the invention can realize the adjustment of the charging speed of the bootstrap switch tube in the bootstrap switch circuit, thereby improving the bootstrap capability of the intelligent power module.
Fig. 4 is a block diagram of an electrical device according to an embodiment of the present invention.
As shown in fig. 4, the electrical device 1000 includes the above-described smart power module 100.
In this embodiment, the electric device 1000 may be an air conditioner.
The electrical equipment provided by the embodiment of the invention can realize the adjustment of the charging speed of the bootstrap switch tube in the bootstrap switch circuit by adopting the intelligent power module, thereby improving the bootstrap capacity of the intelligent power module.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (8)
1. The utility model provides an intelligent power module which characterized in that includes inverter circuit and drive chip, drive chip includes bootstrap circuit and is used for driving the drive circuit of inverter circuit work, wherein, bootstrap circuit includes:
the intelligent power module comprises at least one bootstrap switch circuit, wherein each bootstrap switch circuit comprises at least two bootstrap switch tubes, the input end of each bootstrap switch circuit is connected to the low-voltage region power supply positive end of the intelligent power module, and the output end of each bootstrap switch circuit is connected to one high-voltage region power supply positive end of the intelligent power module;
the first input end of each comparison circuit is connected with the input end of the corresponding bootstrap switch circuit, the second input end of each comparison circuit is connected with the output end of the corresponding bootstrap switch circuit, and each comparison circuit is used for comparing the relation between the input signal of the first input end and the input signal of the second input end and outputting a comparison result;
the control circuits are respectively connected with the output ends of the corresponding comparison circuits and the control ends of the corresponding bootstrap switch circuits and are used for controlling the corresponding bootstrap switch circuits according to the comparison results output by the corresponding comparison circuits so as to adjust the charging speed of the bootstrap switch tubes in the bootstrap switch circuits;
each bootstrap switch circuit comprises two bootstrap switch tubes, namely a first bootstrap switch tube and a second bootstrap switch tube, wherein the source electrode of the first bootstrap switch tube is connected with the source electrode of the second bootstrap switch tube and is connected to the low-voltage area power supply positive end of the intelligent power module, the drain electrode of the first bootstrap switch tube is connected with the drain electrode of the second bootstrap switch tube and is connected to one high-voltage area power supply positive end of the intelligent power module, and the grid electrodes of the first bootstrap switch tube and the second bootstrap switch tube are connected with corresponding control circuits;
the control circuit is used for controlling the on or off of the corresponding first bootstrap switch tube and the on or off of the corresponding second bootstrap switch tube according to the comparison result output by the corresponding comparison circuit;
the control circuit is specifically configured to, when controlling on or off of the corresponding first bootstrap switch tube and on or off of the corresponding second bootstrap switch tube according to the comparison result output by the corresponding comparison circuit:
when the difference value between the voltage input by the first input end and the voltage input by the second input end of the comparison circuit is larger than a first preset difference value, controlling the first bootstrap switch tube and the second bootstrap switch tube to be both turned on;
when the difference between the voltage input by the first input end and the voltage input by the second input end of the comparison circuit is larger than a second preset difference and smaller than or equal to the first preset difference, one of the first bootstrap switch tube and the second bootstrap switch tube is controlled to be turned on and the other is controlled to be turned off.
2. The smart power module of claim 1, further comprising:
and one end of each bootstrap capacitor is connected with the output end of the corresponding bootstrap switch circuit, and the other end of each bootstrap capacitor is connected with the power supply negative end of one high-voltage region of the corresponding intelligent power module.
3. The smart power module of claim 1 wherein the smart power module comprises three bootstrap switch circuits, three comparison circuits, and three control circuits.
4. The intelligent power module according to claim 1, wherein,
the inverter circuit comprises a first IGBT tube, a second IGBT tube, a third IGBT tube, a fourth IGBT tube, a fifth IGBT tube and a sixth IGBT tube, wherein the first IGBT tube, the second IGBT tube and the third IGBT tube form a U-phase upper bridge arm, a V-phase upper bridge arm and a W-phase upper bridge arm, and the fourth IGBT tube, the fifth IGBT tube and the sixth IGBT tube form a U-phase lower bridge arm, a V-phase lower bridge arm and a W-phase lower bridge arm;
the driving circuit comprises a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit and a sixth driving unit, wherein the input ends of the first driving unit, the second driving unit, the third driving unit, the fourth driving unit, the fifth driving unit and the sixth driving unit are respectively used as the input ends of a U-phase upper bridge arm, a V-phase upper bridge arm, a W-phase upper bridge arm, a U-phase lower bridge arm, a V-phase lower bridge arm and a W-phase lower bridge arm, and the output ends of the V-phase upper bridge arm, the W-phase lower bridge arm are respectively connected with the gates of the first IGBT tube, the second IGBT tube, the third IGBT tube, the fourth IGBT tube, the fifth IGBT tube and the sixth IGBT tube.
5. The intelligent power module according to claim 4, wherein the inverter circuit further comprises a first anti-parallel diode, a second anti-parallel diode, a third anti-parallel diode, a fourth anti-parallel diode, a fifth anti-parallel diode, a sixth anti-parallel diode corresponding to the first IGBT tube, the second IGBT tube, the third IGBT tube, the fourth IGBT tube, the fifth IGBT tube, the sixth IGBT tube.
6. The intelligent power module of claim 1, wherein the bootstrap switch tubes in the at least one bootstrap switch circuit each employ a high voltage DMOS tube.
7. An electrical device comprising the intelligent power module of any one of claims 1-6.
8. The electrical device of claim 7, wherein the electrical device is an air conditioner.
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| CN112039510A (en) * | 2020-07-30 | 2020-12-04 | 广东美的白色家电技术创新中心有限公司 | Bootstrap circuit for high-voltage integrated chip, intelligent power module and electrical equipment |
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