CN109994325A - A kind of preparation method of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material - Google Patents
A kind of preparation method of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material Download PDFInfo
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- CN109994325A CN109994325A CN201910249229.1A CN201910249229A CN109994325A CN 109994325 A CN109994325 A CN 109994325A CN 201910249229 A CN201910249229 A CN 201910249229A CN 109994325 A CN109994325 A CN 109994325A
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- carbon dots
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- bismuth oxide
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910000416 bismuth oxide Inorganic materials 0.000 title claims abstract description 26
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000007773 negative electrode material Substances 0.000 title claims abstract description 19
- 239000004005 microsphere Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims abstract description 9
- 238000001354 calcination Methods 0.000 claims abstract description 7
- 239000010405 anode material Substances 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims abstract description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 53
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 235000019441 ethanol Nutrition 0.000 claims description 22
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002171 ethylene diamines Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002114 nanocomposite Substances 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 238000005406 washing Methods 0.000 description 10
- BDJYZEWQEALFKK-UHFFFAOYSA-N bismuth;hydrate Chemical compound O.[Bi] BDJYZEWQEALFKK-UHFFFAOYSA-N 0.000 description 9
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 5
- 238000007599 discharging Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- UKWHYYKOEPRTIC-UHFFFAOYSA-N mercury(ii) oxide Chemical compound [Hg]=O UKWHYYKOEPRTIC-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- 229940101209 mercuric oxide Drugs 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910000474 mercury oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/46—Metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention belongs to nanocomposite preparation field, in particular to a kind of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material preparation method.The present invention prepares bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material using bismuth nitrate, N doping carbon dots as raw material, by solvent heat-calcining two-step method.There is between bismuth oxide and N doping carbon dots synergistic effect in composite material, the capacitive property of homogenous material can be improved.As super capacitor anode material, in 1A/g, specific capacitance is up to 1046F/g, shows higher chemical property.
Description
Technical field
The invention belongs to nanocomposite preparation field, in particular to a kind of bismuth oxide/N doping carbon dots are hollow porous
The preparation method of microballoon negative electrode material.
Technical background
Recently, with smart grid, the fast development of hybrid vehicle and portable electronic device greatly be have stimulated
Extensive research of the researcher to advanced energy storage device is constructed.Wherein, supercapacitor is due to quick charging and discharging capabilities, height
Power density and excellent cyclical stability and become most promising energy storage device.Electrode material is as super capacitor energy
The core of storage, selection and modification are the hot topic of research all the time.Carbon material is because of its big specific surface area, excellent
Different electric conductivity and good cyclical stability, are widely used in super capacitor anode material.However, carbon-based material is often
With lower specific capacitance, this significantly limits the development of supercapacitor.Therefore, the cathode material of other high specific capacitances is explored
Material is particularly important.Currently, some transition metal oxides, such as Mn3O4, Fe2O3And Bi2O3Etc. the pass for causing researcher
Note.Wherein, Bi2O3With cheap, rich content, and theoretical specific capacitance height (1370F g-1) the advantages that, but about
Bi2O3The report of negative electrode material is also less, and the Bi being prepared2O3Material specific capacitance is far below its theoretical capacitor, and capacitor is also
Need to be further increased.
Carbon dots are a kind of novel zero dimension c-based nanomaterial of the size less than 10 nanometers, can accommodate multiple element (such as N,
O, S etc.) and functional group's (such as hydroxyl, carboxyl and carbonyl) on its surface, additionally have good dispersion, excellent electric conductivity,
Biggish specific surface area, is easy to the advantages that preparing.Currently, carbon dots are in photocatalysis, bio-imaging, sensor, electro-catalysis and super
The multiple fields such as capacitor have a wide range of applications.
The study found that carbon dots can improve the wetability of electrode material and electrolyte, improve electrode material specific capacitance and
Cyclical stability.However, about the also rarely seen document report of bismuth oxide/carbon dots composite negative pole material research.
Summary of the invention
The present invention prepares bismuth oxide/nitrogen using bismuth nitrate, N doping carbon dots as raw material, by solvent heat-calcining two-step method
Adulterate carbon dots hollow porous micro sphere negative electrode material.There is between bismuth oxide and N doping carbon dots synergistic effect in composite material, it can
To improve the capacitive property of homogenous material.As super capacitor anode material, in 1A/g, specific capacitance is up to 1046F/g,
Show higher chemical property.
It is an object of that present invention to provide a kind of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material preparation sides
Method adopts the following technical scheme that
(1) it disperses five nitric hydrate bismuths and N doping carbon dots in the mixed solution of ethyl alcohol and acetic acid.
(2) step (1) acquired solution is placed in reaction kettle, 170~190 DEG C of reactions 20~for 24 hours;Reaction terminates, cooling
Afterwards, by solid sample separating, washing, drying obtains presoma, then by it under an inert atmosphere with the heating rate liter of 2 DEG C/min
Temperature obtains bismuth oxide/N doping carbon dots super capacitor anode material after calcining 3~4h to 400~500 DEG C.
In step (1), the N doping carbon dots are to be prepared using citric acid, ethylenediamine as raw material using hydro-thermal method.
Specifically: 1.05g citric acid and 335 μ L ethylenediamines are dissolved in 10mL deionized water, mixed solution is transferred in reaction kettle
In 220 DEG C of reaction 12h, N doping carbon dots are obtained.
In step (1), the concentration of five nitric hydrate bismuths is 0.02-0.03mol/L, and the concentration of N doping carbon dots is 0.125
The volume ratio of~0.375g/L, ethyl alcohol and acetic acid is 3:1.
Beneficial effects of the present invention:
(1) this method operating procedure is simple and easy, and raw material is easy to get, and is easy to industrializing implementation.
(2) bismuth oxide prepared by the present invention/N doping carbon dots hollow porous micro sphere negative electrode material has excellent capacitive character
Can, it has a good application prospect.
Detailed description of the invention
Fig. 1 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material X-ray prepared by the embodiment of the present invention 1
Diffraction (XRD) map.
Fig. 2 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material scanning electricity prepared by the embodiment of the present invention 1
Mirror (SEM) photo (10 μm of scale).
Fig. 3 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material scanning electricity prepared by the embodiment of the present invention 1
Mirror (SEM) photo (1 μm of scale).
Fig. 4 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material power spectrum point prepared by the embodiment of the present invention 1
It analyses (EDS).
Fig. 5 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material of the preparation of the embodiment of the present invention 1 in 3M KOH
The charging and discharging curve tested in electrolyte.
Specific embodiment:
The embodiment of the present invention is described in detail with reference to the accompanying drawing, but protection scope of the present invention is not limited to these
Embodiment.
Embodiment 1:
1.05g citric acid and 335 μ L ethylenediamines are dissolved in 10mL deionized water, mixed solution is transferred in reaction kettle
In 220 DEG C of reaction 12h, N doping carbon dots are obtained.
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Fig. 1 is the XRD diagram of composite material, it can be seen that bismuth oxide corresponds to tetragonal crystal system Bi in composite material2O3
(PDF78-1793) and monocline Bi2O3(PDF 71-2274)。
Fig. 2,3 are schemed for bismuth oxide/N doping carbon dots composite material SEM, it is clear that composite material is hollow more
Pore structure.
Fig. 4 is that the EDS of composite material schemes, it can be seen that composite material is made of C, N, O, Bi element, shows nitrogen-doped carbon
Point is successfully combined with each other with bismuth oxide.
Fig. 5 is composite material in 3M KOH electrolyte, the charge and discharge song tested using mercury/mercuric oxide electrode as reference electrode
Line.In voltage range -1-0V, it is from left to right followed successively by 15A/g, 10A/g, 5A/g, charging and discharging curve when 2A/g, 1A/g,
The composite material shows excellent capacitive property, and in 1A/g, specific capacitance is up to 1046F/g.
Embodiment 2:
By five nitric hydrate bismuth of 0.4mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Embodiment 3:
By five nitric hydrate bismuth of 0.6mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Embodiment 4:
By five nitric hydrate bismuth of 0.5mmol and 2.5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Embodiment 5:
By five nitric hydrate bismuth of 0.5mmol and 7.5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Embodiment 6:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 170 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Embodiment 7:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 190 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Embodiment 8:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 180 DEG C of reactions for 24 hours.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples
Product.
Embodiment 9:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid
In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry
It is dry, presoma is obtained, then it is heated to 500 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 4h is kept to obtain final samples
Product.
Claims (5)
1. a kind of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, it is characterised in that: including as follows
Step:
(1) it disperses five nitric hydrate bismuths and N doping carbon dots in the mixed solution of ethyl alcohol and acetic acid;
(2) step (1) acquired solution is placed in heat in reaction kettle and is reacted;Reaction terminates, and after cooling, solid sample separation is washed
It washs, dries, obtain presoma, then temperature programming after calcining, obtains bismuth oxide/nitrogen to calcination temperature under an inert atmosphere by it
Adulterate carbon dots super capacitor anode material.
2. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature
Be: in step (1), the N doping carbon dots are to be prepared using citric acid, ethylenediamine as raw material using hydro-thermal method;Tool
Body are as follows: 1.05g citric acid and 335 μ L ethylenediamines are dissolved in 10mL deionized water, by mixed solution be transferred in reaction kettle in
220 DEG C of reaction 12h obtain N doping carbon dots.
3. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature
Be: in step (1), the concentration of five nitric hydrate bismuths is 0.02-0.03mol/L, the concentration of N doping carbon dots is 0.125~
The volume ratio of 0.375g/L, ethyl alcohol and acetic acid is 3:1.
4. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature
Be: heated in the reaction kettle reaction temperature be 170~190 DEG C, the reaction time be 20~for 24 hours.
5. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature
Be: the heating rate of temperature programming is 2 DEG C/min, and calcination temperature is 400~500 DEG C, and calcination time is 3~4h.
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CN112479178A (en) * | 2020-12-10 | 2021-03-12 | 哈尔滨理工大学 | Preparation method of lignin carbon/bismuth oxide composite material and pseudo-capacitance performance thereof |
CN113277554A (en) * | 2021-05-21 | 2021-08-20 | 厦门理工学院 | Bismuth oxide/titanium carbide composite material and preparation method thereof |
CN113893840A (en) * | 2021-08-31 | 2022-01-07 | 浙江树人学院(浙江树人大学) | Composite photocatalyst, preparation method and application in dye wastewater |
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