CN109994325A - A kind of preparation method of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material - Google Patents

A kind of preparation method of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material Download PDF

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CN109994325A
CN109994325A CN201910249229.1A CN201910249229A CN109994325A CN 109994325 A CN109994325 A CN 109994325A CN 201910249229 A CN201910249229 A CN 201910249229A CN 109994325 A CN109994325 A CN 109994325A
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carbon dots
doping carbon
bismuth oxide
negative electrode
electrode material
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CN109994325B (en
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季振源
戴文瑶
沈小平
刘锴
朱国兴
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Jiangsu University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/24Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/30Electrodes characterised by their material
    • H01G11/32Carbon-based
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/30Electrodes characterised by their material
    • H01G11/46Metal oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13Energy storage using capacitors

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The invention belongs to nanocomposite preparation field, in particular to a kind of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material preparation method.The present invention prepares bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material using bismuth nitrate, N doping carbon dots as raw material, by solvent heat-calcining two-step method.There is between bismuth oxide and N doping carbon dots synergistic effect in composite material, the capacitive property of homogenous material can be improved.As super capacitor anode material, in 1A/g, specific capacitance is up to 1046F/g, shows higher chemical property.

Description

A kind of preparation method of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material
Technical field
The invention belongs to nanocomposite preparation field, in particular to a kind of bismuth oxide/N doping carbon dots are hollow porous The preparation method of microballoon negative electrode material.
Technical background
Recently, with smart grid, the fast development of hybrid vehicle and portable electronic device greatly be have stimulated Extensive research of the researcher to advanced energy storage device is constructed.Wherein, supercapacitor is due to quick charging and discharging capabilities, height Power density and excellent cyclical stability and become most promising energy storage device.Electrode material is as super capacitor energy The core of storage, selection and modification are the hot topic of research all the time.Carbon material is because of its big specific surface area, excellent Different electric conductivity and good cyclical stability, are widely used in super capacitor anode material.However, carbon-based material is often With lower specific capacitance, this significantly limits the development of supercapacitor.Therefore, the cathode material of other high specific capacitances is explored Material is particularly important.Currently, some transition metal oxides, such as Mn3O4, Fe2O3And Bi2O3Etc. the pass for causing researcher Note.Wherein, Bi2O3With cheap, rich content, and theoretical specific capacitance height (1370F g-1) the advantages that, but about Bi2O3The report of negative electrode material is also less, and the Bi being prepared2O3Material specific capacitance is far below its theoretical capacitor, and capacitor is also Need to be further increased.
Carbon dots are a kind of novel zero dimension c-based nanomaterial of the size less than 10 nanometers, can accommodate multiple element (such as N, O, S etc.) and functional group's (such as hydroxyl, carboxyl and carbonyl) on its surface, additionally have good dispersion, excellent electric conductivity, Biggish specific surface area, is easy to the advantages that preparing.Currently, carbon dots are in photocatalysis, bio-imaging, sensor, electro-catalysis and super The multiple fields such as capacitor have a wide range of applications.
The study found that carbon dots can improve the wetability of electrode material and electrolyte, improve electrode material specific capacitance and Cyclical stability.However, about the also rarely seen document report of bismuth oxide/carbon dots composite negative pole material research.
Summary of the invention
The present invention prepares bismuth oxide/nitrogen using bismuth nitrate, N doping carbon dots as raw material, by solvent heat-calcining two-step method Adulterate carbon dots hollow porous micro sphere negative electrode material.There is between bismuth oxide and N doping carbon dots synergistic effect in composite material, it can To improve the capacitive property of homogenous material.As super capacitor anode material, in 1A/g, specific capacitance is up to 1046F/g, Show higher chemical property.
It is an object of that present invention to provide a kind of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material preparation sides Method adopts the following technical scheme that
(1) it disperses five nitric hydrate bismuths and N doping carbon dots in the mixed solution of ethyl alcohol and acetic acid.
(2) step (1) acquired solution is placed in reaction kettle, 170~190 DEG C of reactions 20~for 24 hours;Reaction terminates, cooling Afterwards, by solid sample separating, washing, drying obtains presoma, then by it under an inert atmosphere with the heating rate liter of 2 DEG C/min Temperature obtains bismuth oxide/N doping carbon dots super capacitor anode material after calcining 3~4h to 400~500 DEG C.
In step (1), the N doping carbon dots are to be prepared using citric acid, ethylenediamine as raw material using hydro-thermal method. Specifically: 1.05g citric acid and 335 μ L ethylenediamines are dissolved in 10mL deionized water, mixed solution is transferred in reaction kettle In 220 DEG C of reaction 12h, N doping carbon dots are obtained.
In step (1), the concentration of five nitric hydrate bismuths is 0.02-0.03mol/L, and the concentration of N doping carbon dots is 0.125 The volume ratio of~0.375g/L, ethyl alcohol and acetic acid is 3:1.
Beneficial effects of the present invention:
(1) this method operating procedure is simple and easy, and raw material is easy to get, and is easy to industrializing implementation.
(2) bismuth oxide prepared by the present invention/N doping carbon dots hollow porous micro sphere negative electrode material has excellent capacitive character Can, it has a good application prospect.
Detailed description of the invention
Fig. 1 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material X-ray prepared by the embodiment of the present invention 1 Diffraction (XRD) map.
Fig. 2 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material scanning electricity prepared by the embodiment of the present invention 1 Mirror (SEM) photo (10 μm of scale).
Fig. 3 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material scanning electricity prepared by the embodiment of the present invention 1 Mirror (SEM) photo (1 μm of scale).
Fig. 4 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material power spectrum point prepared by the embodiment of the present invention 1 It analyses (EDS).
Fig. 5 is bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material of the preparation of the embodiment of the present invention 1 in 3M KOH The charging and discharging curve tested in electrolyte.
Specific embodiment:
The embodiment of the present invention is described in detail with reference to the accompanying drawing, but protection scope of the present invention is not limited to these Embodiment.
Embodiment 1:
1.05g citric acid and 335 μ L ethylenediamines are dissolved in 10mL deionized water, mixed solution is transferred in reaction kettle In 220 DEG C of reaction 12h, N doping carbon dots are obtained.
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Fig. 1 is the XRD diagram of composite material, it can be seen that bismuth oxide corresponds to tetragonal crystal system Bi in composite material2O3 (PDF78-1793) and monocline Bi2O3(PDF 71-2274)。
Fig. 2,3 are schemed for bismuth oxide/N doping carbon dots composite material SEM, it is clear that composite material is hollow more Pore structure.
Fig. 4 is that the EDS of composite material schemes, it can be seen that composite material is made of C, N, O, Bi element, shows nitrogen-doped carbon Point is successfully combined with each other with bismuth oxide.
Fig. 5 is composite material in 3M KOH electrolyte, the charge and discharge song tested using mercury/mercuric oxide electrode as reference electrode Line.In voltage range -1-0V, it is from left to right followed successively by 15A/g, 10A/g, 5A/g, charging and discharging curve when 2A/g, 1A/g, The composite material shows excellent capacitive property, and in 1A/g, specific capacitance is up to 1046F/g.
Embodiment 2:
By five nitric hydrate bismuth of 0.4mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Embodiment 3:
By five nitric hydrate bismuth of 0.6mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Embodiment 4:
By five nitric hydrate bismuth of 0.5mmol and 2.5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Embodiment 5:
By five nitric hydrate bismuth of 0.5mmol and 7.5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Embodiment 6:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 170 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Embodiment 7:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 190 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Embodiment 8:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 180 DEG C of reactions for 24 hours.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 400 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 3h is kept to obtain final samples Product.
Embodiment 9:
By five nitric hydrate bismuth of 0.5mmol and 5mg nitrogen-doped carbon quantum dot ultrasonic disperse in 15mL ethyl alcohol and 5mL acetic acid In, then mixed system is transferred in reaction kettle in 180 DEG C of reaction 20h.After cooling, with deionized water and ethanol washing and dry It is dry, presoma is obtained, then it is heated to 500 DEG C under Ar atmosphere with the heating rate of 2 DEG C/min, 4h is kept to obtain final samples Product.

Claims (5)

1. a kind of bismuth oxide/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, it is characterised in that: including as follows Step:
(1) it disperses five nitric hydrate bismuths and N doping carbon dots in the mixed solution of ethyl alcohol and acetic acid;
(2) step (1) acquired solution is placed in heat in reaction kettle and is reacted;Reaction terminates, and after cooling, solid sample separation is washed It washs, dries, obtain presoma, then temperature programming after calcining, obtains bismuth oxide/nitrogen to calcination temperature under an inert atmosphere by it Adulterate carbon dots super capacitor anode material.
2. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature Be: in step (1), the N doping carbon dots are to be prepared using citric acid, ethylenediamine as raw material using hydro-thermal method;Tool Body are as follows: 1.05g citric acid and 335 μ L ethylenediamines are dissolved in 10mL deionized water, by mixed solution be transferred in reaction kettle in 220 DEG C of reaction 12h obtain N doping carbon dots.
3. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature Be: in step (1), the concentration of five nitric hydrate bismuths is 0.02-0.03mol/L, the concentration of N doping carbon dots is 0.125~ The volume ratio of 0.375g/L, ethyl alcohol and acetic acid is 3:1.
4. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature Be: heated in the reaction kettle reaction temperature be 170~190 DEG C, the reaction time be 20~for 24 hours.
5. bismuth oxide as described in claim 1/N doping carbon dots hollow porous micro sphere negative electrode material preparation method, feature Be: the heating rate of temperature programming is 2 DEG C/min, and calcination temperature is 400~500 DEG C, and calcination time is 3~4h.
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CN113893840A (en) * 2021-08-31 2022-01-07 浙江树人学院(浙江树人大学) Composite photocatalyst, preparation method and application in dye wastewater

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CN113277554A (en) * 2021-05-21 2021-08-20 厦门理工学院 Bismuth oxide/titanium carbide composite material and preparation method thereof
CN113893840A (en) * 2021-08-31 2022-01-07 浙江树人学院(浙江树人大学) Composite photocatalyst, preparation method and application in dye wastewater

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