CN109991240A - One kind being used for the dark crack detection light supply apparatus of SMD chip ultra micro - Google Patents

One kind being used for the dark crack detection light supply apparatus of SMD chip ultra micro Download PDF

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Publication number
CN109991240A
CN109991240A CN201910225422.1A CN201910225422A CN109991240A CN 109991240 A CN109991240 A CN 109991240A CN 201910225422 A CN201910225422 A CN 201910225422A CN 109991240 A CN109991240 A CN 109991240A
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China
Prior art keywords
light source
collecting barrel
millimeters
ultra micro
light
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CN201910225422.1A
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Chinese (zh)
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CN109991240B (en
Inventor
张国安
徐伟钢
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Tongling Multivariate Differential Technology Co Ltd
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Tongling Multivariate Differential Technology Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8809Adjustment for highlighting flaws
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/061Sources

Abstract

The invention discloses one kind to be used for the dark crack detection light supply apparatus of SMD chip ultra micro, including light collecting barrel, is connected by light collecting barrel gland with upper light source on the upside of the light collecting barrel, is connected by lower rotating plate with lower light source on the downside of the light collecting barrel;The upper light source is perpendicular light source, and the lower light source is inclination light source, and tilt angle is 61~64 °;The upper light source is 60~62 millimeters by the two rows of uniformly distributions straggly of 96 LED small electric bulbs point, light source interior diameter, and for the lower light source by 145 LED resistance point, three rows uniformly distribution straggly, light source interior diameter is 64~65 millimeters.Lower light source of the invention relies on rotating plate under light collecting barrel to be adjusted, easy to adjust, simple, effectively improves the detection efficiency and accuracy in detection of the dark crackle of SMD chip 0.009mm or less.

Description

One kind being used for the dark crack detection light supply apparatus of SMD chip ultra micro
Technical field
The present invention relates to wafer inspection fields, more particularly to a kind of dark crack detection of SMD chip 0.009mm or less that is used for use Light supply apparatus.
Background technique
SMD chip is the abbreviation of Surface Mounted Devices, is surface mount device.It has started one newly Epoch.From passive element to active component and integrated circuit, finally all becomes surface mount device (SMD) and can be put by picking up Equipment is assembled.It has following advantage: 1) packing density is high, electronic product is small in size, light-weight, the volume of surface mount elements There was only 1/10 or so of traditional inserting element with weight, after generally using SMT, electronic product volume-diminished 40% ~ 60%, weight Mitigate 60% ~ 80%.2) high reliablity, vibration resistance are strong.Welding point defect rate is low.3) high frequency characteristics is good.Reduce electromagnetism and radio frequency Interference.4) easy to automate, improve production efficiency.Cost is reduced up to 30% ~ 50%.Save material, the energy, equipment, manpower, Time etc..
The detection of SMD chip mainly includes solderability, lead coplanarity and usability.Currently used for SMD wafer inspection Light source can not detect the dark crackle of SMD chip 0.009mm or less, only can be carried out the crack detection of 0.009mm or more, detection exist with Machine and uncertainty, it is bad that there are detection effects, can not batch and the problems such as on-line checking product.
Many researchers are in view of the above-mentioned problems, be also made that some technological improvements, such as Publication No. at present CN201156073 visual positioning SMD wafer detection apparatus is made of transmission unit and image recognition processing unit, and transmission is single Member includes that feeder, disk material platform, Manipulator Transportation device are constituted, and image recognition processing unit includes camera, light source, to be measured Chip enters disk material platform after feeder, and disk material platform is equipped with the work that vision positioning identification is carried out to the center of chip Position, the Manipulator Transportation device are the top electrode of test cell in measurement, and manipulator is inhaled by the negative pressure of a metal material Head is constituted.The measurement accuracy height of device, high degree of automation, structure are simple and convenient to operate, failure rate is low, using visual discrimination System positioning, compared with existing index dial assignment test mode, registration is reliable, accuracy of judgement, and discrimination is high, is particularly suitable for Miniaturization, high frequency, slimming SMD chip positioning and carrying.Above scheme, all to the dark crackle of ultra micro on SMD chip It can not accomplish to detect, especially the problem of light source is badly in need of being resolved.
A kind of chip detection method of Publication No. CN107275244A and device for another example, this method comprises: passing through first Light source and the first photometric instrument and second light source and the second photometric instrument, obtain respectively chip to be measured reflectivity and Transmissivity;The reflectivity and transmissivity of the chip to be measured and the reflectivity and transmissivity of preset aimed wafer are obtained respectively Deviation;Judge whether the deviation is less than preset threshold;When the deviation is less than the preset threshold, described in judgement Chip to be measured is identical as the aimed wafer.It is able to achieve the fast and accurately detection of chip as a result, especially suitable for vacuum work Wafer inspection before skill.Above scheme, master are to solve during quasi-molecule laser annealing, and the chip of mistake is sent into vacuum Chamber, cause chip carbonization and vacuum chamber pollute the problem of, for detecting the type and type of chip.Chip can not be detected On the dark crackle of ultra micro.
Summary of the invention
Present invention aim to address the deficiencies in the prior art, provide a kind of for the dark crackle of SMD chip ultra micro Test light source device.
The technical solution adopted by the present invention is that: one kind being used for the dark crack detection light supply apparatus of SMD chip ultra micro, including poly- Light cylinder, the light collecting barrel upside are connected by light collecting barrel gland with upper light source, pass through lower rotating plate and lower light on the downside of the light collecting barrel Source is connected;The upper light source is perpendicular light source, and the lower light source is inclination light source, and tilt angle is 61~64 °;The glazing Source is 60~62 millimeters by the two rows of uniformly distributions straggly of 96 LED small electric bulbs point, light source interior diameter, and the lower light source is by 145 LED Resistance point three rows uniformly distribution straggly, light source interior diameter are 64~65 millimeters.
As a further improvement of the present invention, the tilt angle of the lower light source is 61.5 °.
As a further improvement of the present invention, the wavelength of the upper and lower light source is 400~450 nanometers.
As a further improvement of the present invention, the interior diameter of the upper light source is 61 millimeters, the lower light source it is interior straight Diameter is 65 millimeters.
As a further improvement of the present invention, the spacing of the upper and lower light source is 87~92 millimeters.
As a further improvement of the present invention, the internal diameter of light collecting barrel is 90 millimeters.
The beneficial effect that the present invention uses is: light supply apparatus of the invention can be stablized in effectively detection SMD chip 0.009mm dark crackle below guarantees the detection to the dark crackle efficiently and accurately of SMD chip ultra micro, meets factory mass product Testing requirements realize SMD chip outgoing control.Lower light source of the invention relies on rotating plate under light collecting barrel to be adjusted, and adjusts It is convenient, simple, effectively improve the detection efficiency and accuracy in detection of the dark crackle of SMD chip 0.009mm or less.
Detailed description of the invention
Fig. 1 is schematic diagram of the present invention.
Fig. 2 is first test result of the embodiment of the present invention.
Fig. 3 is the embodiment of the present invention second batch test result.
Fig. 4 is the embodiment of the present invention third batch test result.
As shown in the figure: 1 light collecting barrel, 2 light collecting barrel glands, 3 descend rotating plates, light source on 4,5 lower light sources.
Specific embodiment
Below with reference to Fig. 1, the present invention is described further.
As shown in Figure 1, it is a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, including light collecting barrel 1, it is described poly- It is connected by light collecting barrel gland 2 with upper light source 4 on the upside of light cylinder 1,1 downside of light collecting barrel passes through lower rotating plate 3 and lower 5 phase of light source Even;The upper light source 4 is perpendicular light source, and the lower light source 5 is inclination light source, and tilt angle is 61~64 °;The upper light source 4 by the two rows of uniform distributions straggly of 96 LED small electric bulbs point, and light source interior diameter is 60~62 millimeters, and the lower light source 5 is by 145 LED Resistance point three rows uniformly distribution straggly, light source interior diameter are 64~65 millimeters.
Since SMD chip not only has the defect of the dark crackle of 0.009mm or less, also while having detection scuffing unfilled corner dirty The defects of piece half twin crystal side lacks, and common LED light source can not then carry out effective on-line checking simultaneously.Usual Detection in, be only able to detect chip dirty half twin crystal side of scuffing unfilled corner lack etc., cannot detect 0.009mm dark crackle below.Or it is only able to detect 0.009mm dark crackle below and cannot detect scuffing unfilled corner Dirty etc., the two cannot be taken into account, and bring great inconvenience to manufacturing enterprise.To guarantee that the detection of SMD chip can be taken into account Above-mentioned two problems, inventor has found that needing the wavelength from light source, inclined angle, upper light source and lower light source size Proportion etc. solve.
To further explain the application, selected from following examples.
Upper light source 4 is connect by light collecting barrel gland 2 with light collecting barrel 1 by embodiment, then by lower light source 5 by lower rotating plate 3 and Light collecting barrel 1 is connected, and by rotating lower rotating plate 3, realizes the up and down adjustment of lower light source 5.Light collecting barrel uses nylon cylinder, parameter Are as follows: internal diameter 90mm, error ± 1mm;Highly: H120mm, error ± 1mm;Color: black.The parameter of upper light source is diameter 61mm is vertical blue-light source, led lamp beads 96, divides two rows of uniformly distributions straggly.The parameter of lower light source is diameter 65mm, is oblique Blue-light source, led lamp beads 145, point three rows uniformly distribution straggly;Tilt angle is 61.5 degree, error ± 1 degree.Between upper and lower light source Away from 87mm-92mm, lower light source can up and down adjustment according to actual needs, upper and lower optical source wavelength be 400 nanometers to 450 nanometers it Between.
To verify detection effect of the invention, wafer inspection is done using light source of the invention by taking SMD chip as an example, is divided into three Batch, every batch of 2000, frequency 26M.
First test result:
Second batch test result:
Third batch test result:
Show that common LED light source can not detect the dark crackle on chip by comparative test.And apparatus of the present invention not only may be used To detect the dark crackle on chip, while it can also detect that other are all in scarce with scuffing dirty twin crystal side of unfilled corner Etc the not detectable defect of defect and common LED light source etc..
Summarized simultaneously by research repeatedly, 1, the internal diameter that upper light source internal diameter is light source under 61mm be 65mm be it is best, when upper When light source is more than or less than 61mm or when the internal diameter of lower light source is more than or less than 65mm, fine scratch and dark crackle on chip are then It cannot find.2, it is optimum state when the tilt angle of light source is 61.5 degree of oblique angles instantly, when being greater than 61.5 degree of inclinations angle, can sends out Dirty side of unfilled corner on existing chip lacks etc., then the dark crackle on chip can not be found.It is brilliant when less than 61.5 degree of inclinations angle The defect of on piece is difficult to find, False Rate is high, and processor calculates overlong time.3, the spacing of upper and lower light source should be controlled in 87mm- 92mm or so, otherwise the defects of dirty twin crystal of the scuffing on chip, can not find.
Light supply apparatus of the invention can stablize 0.009mm dark crackle below in effectively detection SMD chip, guarantee pair The detection of the dark crackle efficiently and accurately of SMD chip ultra micro meets factory mass product testing requirement, realizes SMD chip factory matter Measure control.Lower light source of the invention relies on rotating plate under light collecting barrel to be adjusted, easy to adjust, simple, effectively improves SMD chip The detection efficiency and accuracy in detection of the dark crackle of 0.009mm or less.
Those skilled in the art should know the protection scheme of the present invention is not limited only to the above embodiments, can also be Various permutation and combination and transformation are carried out on the basis of above-described embodiment, on the premise of without prejudice to spirit of the invention, to the present invention The various transformation carried out are fallen within the scope of protection of the present invention.

Claims (6)

1. one kind is used for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that including light collecting barrel (1), the optically focused Be connected with upper light source (4) on the upside of cylinder (1) by light collecting barrel gland (2), light collecting barrel (1) downside by lower rotating plate (3) and under Light source (5) is connected;The upper light source (4) be perpendicular light source, the lower light source (5) be inclination light source, tilt angle be 61~ 64°;For the upper light source (4) by the two rows of uniformly distributions straggly of 96 LED small electric bulbs point, light source interior diameter is 60~62 millimeters, described For lower light source (5) by 145 LED resistance point, three rows uniformly distribution straggly, light source interior diameter is 64~65 millimeters.
2. it is according to claim 1 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described The tilt angle of lower light source is 61.5 °.
3. it is according to claim 1 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described The wavelength of upper and lower light source is 400~450 nanometers.
4. a kind of dark crack detection of SMD chip ultra micro that is used for as claimed in any of claims 1 to 3 is filled with light source It sets, it is characterized in that the interior diameter of the upper light source is 61 millimeters, the interior diameter of the lower light source is 65 millimeters.
5. it is according to claim 4 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described The spacing of upper and lower light source is 87~92 millimeters.
6. it is according to claim 4 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described The internal diameter of light collecting barrel is 90 millimeters.
CN201910225422.1A 2019-03-25 2019-03-25 Light source device for SMD wafer ultra-micro dark crack detection Active CN109991240B (en)

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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11326224A (en) * 1998-03-15 1999-11-26 Omron Corp Inspection method and device
JP2000009591A (en) * 1998-06-25 2000-01-14 Omron Corp Inspection equipment
US7126699B1 (en) * 2002-10-18 2006-10-24 Kla-Tencor Technologies Corp. Systems and methods for multi-dimensional metrology and/or inspection of a specimen
JP2009236760A (en) * 2008-03-27 2009-10-15 Daishinku Corp Image detection device and inspection apparatus
CN201969698U (en) * 2010-12-30 2011-09-14 常州松晶电子有限公司 Shadowless lamphouse for separating wafers
CN202614687U (en) * 2011-12-30 2012-12-19 安徽鑫昊等离子显示器件有限公司 Barrier scanner of plasma display panel (PDP)
CN204008486U (en) * 2014-07-21 2014-12-10 四川祥益智能科技有限公司 The combination of light sources of online optical detector
CN104678543A (en) * 2014-12-26 2015-06-03 中国科学院苏州生物医学工程技术研究所 Incoherent light source-based optical nipper microscope
KR101575895B1 (en) * 2014-10-28 2015-12-08 한국교통대학교산학협력단 Apparatus and method for inspecting wafer using light
CN204882348U (en) * 2015-08-11 2015-12-16 深圳市标谱半导体科技有限公司 Can make a plurality of surfaces of part light source device of formation of image simultaneously
CN205749250U (en) * 2016-06-20 2016-11-30 哲为(上海)仪器科技有限公司 Curved surface outward appearance detection light-source system
CN108693193A (en) * 2018-05-18 2018-10-23 信义节能玻璃(四川)有限公司 Glass optical detection device and Glass optical detecting system
CN108956407A (en) * 2018-09-21 2018-12-07 安徽农业大学 A kind of optical path aggregation infrastructure

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11326224A (en) * 1998-03-15 1999-11-26 Omron Corp Inspection method and device
JP2000009591A (en) * 1998-06-25 2000-01-14 Omron Corp Inspection equipment
US7126699B1 (en) * 2002-10-18 2006-10-24 Kla-Tencor Technologies Corp. Systems and methods for multi-dimensional metrology and/or inspection of a specimen
JP2009236760A (en) * 2008-03-27 2009-10-15 Daishinku Corp Image detection device and inspection apparatus
CN201969698U (en) * 2010-12-30 2011-09-14 常州松晶电子有限公司 Shadowless lamphouse for separating wafers
CN202614687U (en) * 2011-12-30 2012-12-19 安徽鑫昊等离子显示器件有限公司 Barrier scanner of plasma display panel (PDP)
CN204008486U (en) * 2014-07-21 2014-12-10 四川祥益智能科技有限公司 The combination of light sources of online optical detector
KR101575895B1 (en) * 2014-10-28 2015-12-08 한국교통대학교산학협력단 Apparatus and method for inspecting wafer using light
CN104678543A (en) * 2014-12-26 2015-06-03 中国科学院苏州生物医学工程技术研究所 Incoherent light source-based optical nipper microscope
CN204882348U (en) * 2015-08-11 2015-12-16 深圳市标谱半导体科技有限公司 Can make a plurality of surfaces of part light source device of formation of image simultaneously
CN205749250U (en) * 2016-06-20 2016-11-30 哲为(上海)仪器科技有限公司 Curved surface outward appearance detection light-source system
CN108693193A (en) * 2018-05-18 2018-10-23 信义节能玻璃(四川)有限公司 Glass optical detection device and Glass optical detecting system
CN108956407A (en) * 2018-09-21 2018-12-07 安徽农业大学 A kind of optical path aggregation infrastructure

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
孙彦春: "《基于数字图像处理的水晶晶片缺陷检测》", 《中国优秀硕士学位论文全文数据库信息科技辑》 *
孙彦春: "《基于数字图像处理的水晶晶片缺陷检测》", 《中国优秀硕士学位论文全文数据库信息科技辑》, 15 July 2010 (2010-07-15) *
张文俊: "《基于数字图像处理的水晶晶片缺陷检测》", 《中国优秀博硕士学位论文全文数据库(硕士)基础科学辑》, 15 January 2008 (2008-01-15) *

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