CN109991240A - One kind being used for the dark crack detection light supply apparatus of SMD chip ultra micro - Google Patents
One kind being used for the dark crack detection light supply apparatus of SMD chip ultra micro Download PDFInfo
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- CN109991240A CN109991240A CN201910225422.1A CN201910225422A CN109991240A CN 109991240 A CN109991240 A CN 109991240A CN 201910225422 A CN201910225422 A CN 201910225422A CN 109991240 A CN109991240 A CN 109991240A
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- light source
- collecting barrel
- millimeters
- ultra micro
- light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8809—Adjustment for highlighting flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
Abstract
The invention discloses one kind to be used for the dark crack detection light supply apparatus of SMD chip ultra micro, including light collecting barrel, is connected by light collecting barrel gland with upper light source on the upside of the light collecting barrel, is connected by lower rotating plate with lower light source on the downside of the light collecting barrel;The upper light source is perpendicular light source, and the lower light source is inclination light source, and tilt angle is 61~64 °;The upper light source is 60~62 millimeters by the two rows of uniformly distributions straggly of 96 LED small electric bulbs point, light source interior diameter, and for the lower light source by 145 LED resistance point, three rows uniformly distribution straggly, light source interior diameter is 64~65 millimeters.Lower light source of the invention relies on rotating plate under light collecting barrel to be adjusted, easy to adjust, simple, effectively improves the detection efficiency and accuracy in detection of the dark crackle of SMD chip 0.009mm or less.
Description
Technical field
The present invention relates to wafer inspection fields, more particularly to a kind of dark crack detection of SMD chip 0.009mm or less that is used for use
Light supply apparatus.
Background technique
SMD chip is the abbreviation of Surface Mounted Devices, is surface mount device.It has started one newly
Epoch.From passive element to active component and integrated circuit, finally all becomes surface mount device (SMD) and can be put by picking up
Equipment is assembled.It has following advantage: 1) packing density is high, electronic product is small in size, light-weight, the volume of surface mount elements
There was only 1/10 or so of traditional inserting element with weight, after generally using SMT, electronic product volume-diminished 40% ~ 60%, weight
Mitigate 60% ~ 80%.2) high reliablity, vibration resistance are strong.Welding point defect rate is low.3) high frequency characteristics is good.Reduce electromagnetism and radio frequency
Interference.4) easy to automate, improve production efficiency.Cost is reduced up to 30% ~ 50%.Save material, the energy, equipment, manpower,
Time etc..
The detection of SMD chip mainly includes solderability, lead coplanarity and usability.Currently used for SMD wafer inspection
Light source can not detect the dark crackle of SMD chip 0.009mm or less, only can be carried out the crack detection of 0.009mm or more, detection exist with
Machine and uncertainty, it is bad that there are detection effects, can not batch and the problems such as on-line checking product.
Many researchers are in view of the above-mentioned problems, be also made that some technological improvements, such as Publication No. at present
CN201156073 visual positioning SMD wafer detection apparatus is made of transmission unit and image recognition processing unit, and transmission is single
Member includes that feeder, disk material platform, Manipulator Transportation device are constituted, and image recognition processing unit includes camera, light source, to be measured
Chip enters disk material platform after feeder, and disk material platform is equipped with the work that vision positioning identification is carried out to the center of chip
Position, the Manipulator Transportation device are the top electrode of test cell in measurement, and manipulator is inhaled by the negative pressure of a metal material
Head is constituted.The measurement accuracy height of device, high degree of automation, structure are simple and convenient to operate, failure rate is low, using visual discrimination
System positioning, compared with existing index dial assignment test mode, registration is reliable, accuracy of judgement, and discrimination is high, is particularly suitable for
Miniaturization, high frequency, slimming SMD chip positioning and carrying.Above scheme, all to the dark crackle of ultra micro on SMD chip
It can not accomplish to detect, especially the problem of light source is badly in need of being resolved.
A kind of chip detection method of Publication No. CN107275244A and device for another example, this method comprises: passing through first
Light source and the first photometric instrument and second light source and the second photometric instrument, obtain respectively chip to be measured reflectivity and
Transmissivity;The reflectivity and transmissivity of the chip to be measured and the reflectivity and transmissivity of preset aimed wafer are obtained respectively
Deviation;Judge whether the deviation is less than preset threshold;When the deviation is less than the preset threshold, described in judgement
Chip to be measured is identical as the aimed wafer.It is able to achieve the fast and accurately detection of chip as a result, especially suitable for vacuum work
Wafer inspection before skill.Above scheme, master are to solve during quasi-molecule laser annealing, and the chip of mistake is sent into vacuum
Chamber, cause chip carbonization and vacuum chamber pollute the problem of, for detecting the type and type of chip.Chip can not be detected
On the dark crackle of ultra micro.
Summary of the invention
Present invention aim to address the deficiencies in the prior art, provide a kind of for the dark crackle of SMD chip ultra micro
Test light source device.
The technical solution adopted by the present invention is that: one kind being used for the dark crack detection light supply apparatus of SMD chip ultra micro, including poly-
Light cylinder, the light collecting barrel upside are connected by light collecting barrel gland with upper light source, pass through lower rotating plate and lower light on the downside of the light collecting barrel
Source is connected;The upper light source is perpendicular light source, and the lower light source is inclination light source, and tilt angle is 61~64 °;The glazing
Source is 60~62 millimeters by the two rows of uniformly distributions straggly of 96 LED small electric bulbs point, light source interior diameter, and the lower light source is by 145 LED
Resistance point three rows uniformly distribution straggly, light source interior diameter are 64~65 millimeters.
As a further improvement of the present invention, the tilt angle of the lower light source is 61.5 °.
As a further improvement of the present invention, the wavelength of the upper and lower light source is 400~450 nanometers.
As a further improvement of the present invention, the interior diameter of the upper light source is 61 millimeters, the lower light source it is interior straight
Diameter is 65 millimeters.
As a further improvement of the present invention, the spacing of the upper and lower light source is 87~92 millimeters.
As a further improvement of the present invention, the internal diameter of light collecting barrel is 90 millimeters.
The beneficial effect that the present invention uses is: light supply apparatus of the invention can be stablized in effectively detection SMD chip
0.009mm dark crackle below guarantees the detection to the dark crackle efficiently and accurately of SMD chip ultra micro, meets factory mass product
Testing requirements realize SMD chip outgoing control.Lower light source of the invention relies on rotating plate under light collecting barrel to be adjusted, and adjusts
It is convenient, simple, effectively improve the detection efficiency and accuracy in detection of the dark crackle of SMD chip 0.009mm or less.
Detailed description of the invention
Fig. 1 is schematic diagram of the present invention.
Fig. 2 is first test result of the embodiment of the present invention.
Fig. 3 is the embodiment of the present invention second batch test result.
Fig. 4 is the embodiment of the present invention third batch test result.
As shown in the figure: 1 light collecting barrel, 2 light collecting barrel glands, 3 descend rotating plates, light source on 4,5 lower light sources.
Specific embodiment
Below with reference to Fig. 1, the present invention is described further.
As shown in Figure 1, it is a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, including light collecting barrel 1, it is described poly-
It is connected by light collecting barrel gland 2 with upper light source 4 on the upside of light cylinder 1,1 downside of light collecting barrel passes through lower rotating plate 3 and lower 5 phase of light source
Even;The upper light source 4 is perpendicular light source, and the lower light source 5 is inclination light source, and tilt angle is 61~64 °;The upper light source
4 by the two rows of uniform distributions straggly of 96 LED small electric bulbs point, and light source interior diameter is 60~62 millimeters, and the lower light source 5 is by 145 LED
Resistance point three rows uniformly distribution straggly, light source interior diameter are 64~65 millimeters.
Since SMD chip not only has the defect of the dark crackle of 0.009mm or less, also while having detection scuffing unfilled corner dirty
The defects of piece half twin crystal side lacks, and common LED light source can not then carry out effective on-line checking simultaneously.Usual
Detection in, be only able to detect chip dirty half twin crystal side of scuffing unfilled corner lack etc., cannot detect
0.009mm dark crackle below.Or it is only able to detect 0.009mm dark crackle below and cannot detect scuffing unfilled corner
Dirty etc., the two cannot be taken into account, and bring great inconvenience to manufacturing enterprise.To guarantee that the detection of SMD chip can be taken into account
Above-mentioned two problems, inventor has found that needing the wavelength from light source, inclined angle, upper light source and lower light source size
Proportion etc. solve.
To further explain the application, selected from following examples.
Upper light source 4 is connect by light collecting barrel gland 2 with light collecting barrel 1 by embodiment, then by lower light source 5 by lower rotating plate 3 and
Light collecting barrel 1 is connected, and by rotating lower rotating plate 3, realizes the up and down adjustment of lower light source 5.Light collecting barrel uses nylon cylinder, parameter
Are as follows: internal diameter 90mm, error ± 1mm;Highly: H120mm, error ± 1mm;Color: black.The parameter of upper light source is diameter
61mm is vertical blue-light source, led lamp beads 96, divides two rows of uniformly distributions straggly.The parameter of lower light source is diameter 65mm, is oblique
Blue-light source, led lamp beads 145, point three rows uniformly distribution straggly;Tilt angle is 61.5 degree, error ± 1 degree.Between upper and lower light source
Away from 87mm-92mm, lower light source can up and down adjustment according to actual needs, upper and lower optical source wavelength be 400 nanometers to 450 nanometers it
Between.
To verify detection effect of the invention, wafer inspection is done using light source of the invention by taking SMD chip as an example, is divided into three
Batch, every batch of 2000, frequency 26M.
First test result:
Second batch test result:
Third batch test result:
Show that common LED light source can not detect the dark crackle on chip by comparative test.And apparatus of the present invention not only may be used
To detect the dark crackle on chip, while it can also detect that other are all in scarce with scuffing dirty twin crystal side of unfilled corner
Etc the not detectable defect of defect and common LED light source etc..
Summarized simultaneously by research repeatedly, 1, the internal diameter that upper light source internal diameter is light source under 61mm be 65mm be it is best, when upper
When light source is more than or less than 61mm or when the internal diameter of lower light source is more than or less than 65mm, fine scratch and dark crackle on chip are then
It cannot find.2, it is optimum state when the tilt angle of light source is 61.5 degree of oblique angles instantly, when being greater than 61.5 degree of inclinations angle, can sends out
Dirty side of unfilled corner on existing chip lacks etc., then the dark crackle on chip can not be found.It is brilliant when less than 61.5 degree of inclinations angle
The defect of on piece is difficult to find, False Rate is high, and processor calculates overlong time.3, the spacing of upper and lower light source should be controlled in 87mm-
92mm or so, otherwise the defects of dirty twin crystal of the scuffing on chip, can not find.
Light supply apparatus of the invention can stablize 0.009mm dark crackle below in effectively detection SMD chip, guarantee pair
The detection of the dark crackle efficiently and accurately of SMD chip ultra micro meets factory mass product testing requirement, realizes SMD chip factory matter
Measure control.Lower light source of the invention relies on rotating plate under light collecting barrel to be adjusted, easy to adjust, simple, effectively improves SMD chip
The detection efficiency and accuracy in detection of the dark crackle of 0.009mm or less.
Those skilled in the art should know the protection scheme of the present invention is not limited only to the above embodiments, can also be
Various permutation and combination and transformation are carried out on the basis of above-described embodiment, on the premise of without prejudice to spirit of the invention, to the present invention
The various transformation carried out are fallen within the scope of protection of the present invention.
Claims (6)
1. one kind is used for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that including light collecting barrel (1), the optically focused
Be connected with upper light source (4) on the upside of cylinder (1) by light collecting barrel gland (2), light collecting barrel (1) downside by lower rotating plate (3) and under
Light source (5) is connected;The upper light source (4) be perpendicular light source, the lower light source (5) be inclination light source, tilt angle be 61~
64°;For the upper light source (4) by the two rows of uniformly distributions straggly of 96 LED small electric bulbs point, light source interior diameter is 60~62 millimeters, described
For lower light source (5) by 145 LED resistance point, three rows uniformly distribution straggly, light source interior diameter is 64~65 millimeters.
2. it is according to claim 1 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described
The tilt angle of lower light source is 61.5 °.
3. it is according to claim 1 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described
The wavelength of upper and lower light source is 400~450 nanometers.
4. a kind of dark crack detection of SMD chip ultra micro that is used for as claimed in any of claims 1 to 3 is filled with light source
It sets, it is characterized in that the interior diameter of the upper light source is 61 millimeters, the interior diameter of the lower light source is 65 millimeters.
5. it is according to claim 4 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described
The spacing of upper and lower light source is 87~92 millimeters.
6. it is according to claim 4 a kind of for the dark crack detection light supply apparatus of SMD chip ultra micro, it is characterized in that described
The internal diameter of light collecting barrel is 90 millimeters.
Priority Applications (1)
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CN201910225422.1A CN109991240B (en) | 2019-03-25 | 2019-03-25 | Light source device for SMD wafer ultra-micro dark crack detection |
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CN201910225422.1A CN109991240B (en) | 2019-03-25 | 2019-03-25 | Light source device for SMD wafer ultra-micro dark crack detection |
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CN109991240B CN109991240B (en) | 2022-11-22 |
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