CN109990915A - Temperature sensor - Google Patents
Temperature sensor Download PDFInfo
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- CN109990915A CN109990915A CN201711470250.1A CN201711470250A CN109990915A CN 109990915 A CN109990915 A CN 109990915A CN 201711470250 A CN201711470250 A CN 201711470250A CN 109990915 A CN109990915 A CN 109990915A
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- temperature sensor
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- temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
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Abstract
The invention belongs to technology of quantum dots fields, and in particular to a kind of temperature sensor.The temperature sensor is arranged in LED chip, the temperature sensor includes the anode and cathode being stacked, and the quantum dot film between the anode and cathode is set, the anode or the cathode are adjacent with the LED chip, and the quantum dot film is made of the quantum dot that surface is connected with mercaptan ligand.Temperature sensor of the invention is in mercaptan ligand TmNeighbouring continuous temperature change, so that it may observe the variation of the optical characteristics of temperature sensor, and then obtain accurate temperature information.Not only simple operations are simple for the temperature sensor, Yi Chongfu, but also can enhance the sensitivity of temperature sensor.
Description
Technical field
The invention belongs to technology of quantum dots fields, and in particular to a kind of temperature sensor.
Background technique
Temperature sensor (temperature transducer) is varied with temperature using the various physical properties of substance
Rule is the sensor of electricity temperature transition.The sensitive layer of many temperature sensors is prepared using nano material
, different electrology characteristics mainly is showed using what nanometer varied with temperature,
There is Colloidal Quantum Dots biggish specific surface area to imply their electrical and optical properties by surface electron states
It is dominate, especially the electronic state of band gap, therefore understands that and controlling the electronic state of quantum dot surface and utilizing these electricity spy
Property be used to preparation temperature sensor be also an important research topic.Low temperature tactility apparatus has relatively broad purposes as cured
The fields such as, scientific research test, biology, however oxygen is due to the material sensitivity under low-temperature condition for low-temperature sensor
The poor state even in the private job done during work hours instead of in one's spare time of energy, therefore find a kind of relatively important using low-temperature sensor is prepared.
The electrical properties of colloidal semiconductor quantum dot are more important, rely primarily on the ligand on Colloidal Quantum Dots surface, adopt
The Colloidal Quantum Dots synthesized with different method, ligand species contained by surface are different, these ligands are to Colloidal Quantum Dots
Dispersibility and surface charge passivation are very crucial.When preparing photoelectric device using Colloidal Quantum Dots, need Colloidal Quantum Dots
It is prepared into quantum dot solid film, while the insulation long-chain Ligand of quantum dot solid film can be also exchanged by short chain according to device requirement
Ligand, to improve the conductibility of quantum solid point state film, short chain ligand can significantly improve the electrical conductivity of quantum dot solid film.Mesh
Before, ligand is concentrated mainly in the chemical property of quantum dot surface ligand (such as ligand the research that quantum dot solid film influences
Functional group, the surface binding characteristic of ligand, length of ligand molecular etc.), however quantum dot surface is covered on to ligand molecular
Physical state (i.e. the macrostate of ligand: solid-state or liquid) does not report the research that the electrical properties of quantum dot solid film influence also
Road.
Summary of the invention
It is an object of the invention to overcome the above-mentioned deficiency of the prior art, a kind of temperature sensor is provided, it is intended to solve existing
The technical problem for having temperature sensor sensitivity low.
For achieving the above object, The technical solution adopted by the invention is as follows:
One aspect of the present invention provides a kind of temperature sensor, and the temperature sensor is arranged in LED chip, the temperature
Sensor includes the anode and cathode being stacked, and the quantum dot film being arranged between the anode and cathode, described
Anode or the cathode are adjacent with the LED chip, and the quantum dot film is connected with the quantum dot group of mercaptan ligand by surface
At.
Temperature sensor provided by the invention matches body solid-liquid critical-temperature T in mercaptan according to quantum dot filmm(i.e. mercaptan
The fusing point of ligand) up and down when, the optical characteristics that quantum dot film shows has a reversible transition: i.e. quantum dot film is low
In the solid-liquid critical-temperature T of mercaptan ligandmWhen, enhancement effect, while launch wavelength can occur for the fluorescence intensity of quantum dot film
Also wavelength when solution state can be restored to；When quantum dot film temperature is higher than TmWhen, biggish be quenched can occur for fluorescence intensity
And redshift effect (red shift of wavelength) occurs.Therefore, it can use the characteristic, quantum dot film be used for temperature sensor to examine
Mercaptan ligand is surface modified quantum dot by the variation of testing temperature, and the quantum dot of modified is then used to prepare temperature
Temperature sensor is finally in mercaptan ligand T by sensormNeighbouring continuous temperature change, so that it may observe temperature sensing
The variation of the optical characteristics of device, and then obtain accurate temperature signal.Not only simple operations are simple for the temperature sensor, Yi Chong
It is multiple, and the sensitivity of temperature sensor can be enhanced.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of temperature sensor of the invention.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
The embodiment of the invention provides a kind of temperature sensors, as shown in Figure 1, the temperature sensor is arranged in LED core
On piece, the temperature sensor are arranged in LED chip, and the temperature sensor includes the anode and cathode being stacked, with
And the quantum dot film between the anode and cathode is set, the anode or the cathode are adjacent with the LED chip, institute
Quantum dot film is stated to be made of the quantum dot that surface is connected with mercaptan ligand.
Temperature sensor provided in an embodiment of the present invention matches body solid-liquid critical-temperature T in mercaptan according to quantum dot filmm
(i.e. the fusing point of mercaptan ligand) up and down when, the optical characteristics that quantum dot film shows has reversible transition: i.e. quantum
Point film is lower than the solid-liquid critical-temperature T of mercaptan ligandmWhen, enhancement effect can occur for the fluorescence intensity of quantum dot film, simultaneously
Launch wavelength can also be restored to wavelength when solution state；When quantum dot film temperature is higher than TmWhen, fluorescence intensity can occur compared with
Big is quenched and redshift effect (red shift of wavelength) occurs.Therefore, it can use the characteristic, quantum dot film be used for temperature and is passed
Mercaptan ligand is surface modified quantum dot to detect the variation of temperature, is then used for the quantum dot of modified by sensor
It is prepared into temperature sensor, temperature sensor is finally in mercaptan ligand TmNeighbouring continuous temperature change, so that it may observe
To the variation of the optical characteristics of temperature sensor, and then obtain accurate temperature signal.The temperature sensor not only simple operations
Simply, Yi Chongfu, and the sensitivity of temperature sensor can be enhanced.
Specifically, a kind of quantum dot of particle size is greater than for Exciton Bohr Radius, matches system using the mercaptan of short chain
It, can be with some phenomenons of different Temperature Treatment generations: the amount of the mercaptan of sulfydryl is covered with using surface after at solid film
After son point is prepared into solid film, the charge-trapping state of quantum dot surface has reversible behavior.Such quantum dot film is ground
Study carefully discovery, quantum dot film is lower than the solid-liquid critical-temperature T of ligandm(the mercaptan ligand of quantum dot surface becomes liquid from solid-state
When temperature Tm, i.e. the fusing point of mercaptan ligand) when, enhancement effect, while transmitted wave can occur for the fluorescence intensity of quantum dot film
Length can also be restored to wavelength when solution state)；When quantum dot film temperature is higher than TmWhen, biggish quench can occur for fluorescence intensity
It goes out and redshift effect (red shift of wavelength) occurs.The mechanism principle for generating the effect is surface layer ligand molecular and quantum dot surface shape
At the bond energy of covalent bond such as S-Pb be weaker than the Pb-S bond energy of crystal inside, therefore the unordered ligand molecular in flowing will drive
Surface metal atoms flow (similar vibration) together, and the coating metal atom in flow regime will cause the capture of band gap deep energy level
And then reduce the fluorescence intensity of quantum solid point state film；The main reason is that the ligand molecular variation with temperature with quantum dot surface
(such as 77-337K, in which: T (K)=t (DEG C)+273.15；Such as 0K=-273.151 DEG C) can be from disorder to order transition in turn
Surface charge trapped state is influenced, quantum dot solid film is glimmering when the ligand of quantum dot surface is in the state of orderly (solid-state)
Fluorescence intensity when luminous intensity is higher than unordered (liquid) state (main mechanism can be regarded as: match by the mercaptan in order state
Body forms an organic molecular species shell in quantum dot surface, and the band gap of the shell, which has, to be greater than quantum dot band gap therefore have certain
Quantum dot confinement effect).Therefore, the quantum dot that surface is connected with mercaptan ligand is used to prepare temperature and passed by the embodiment of the present invention
Sensor, the temperature sensor are in mercaptan ligand TmWhen neighbouring continuous temperature change, so that it may observe temperature sensor
The variation of optical characteristics, and then obtain accurate temperature signal.Not only simple operations are simple for the temperature sensor, Yi Chongfu, and
And the sensitivity of temperature sensor can be enhanced.
Therefore different types of mercaptan ligand (solid-liquid critical-temperature T is usedmIt is different), preparation temperature sensor can detect
Different temperature ranges.Specifically, in the temperature sensor of the embodiment of the present invention, the solid-liquid critical-temperature of the mercaptan ligand
TmLess than or equal to 10 DEG C.The i.e. described mercaptan ligand is all liquid under room temperature state.Further, the mercaptan ligand is selected from just
At least one of butanethiol, hexyl mercaptan, eight mercaptan, dithioglycol, succinimide mercaptans and ethanthiol.The mercaptan ligand is corresponding
Solid-liquid critical-temperature are as follows: n-butyl mercaptan (157.5K), hexyl mercaptan (192.6K), eight mercaptan (224K), dithioglycol (232K),
Succinimide mercaptans (219K), ethanthiol (252K).I.e. the temperature sensor can be perfectly suitable for the environment of low temperature.
Further, the LED chip is any one in blue-light LED chip, green LED chip and red LED chip
Kind, a length of 300-700nm of the excitation light wave of the LED chip, it can drive quantum dot film using different excitation wavelengths
Luminous signal variation, such as can 365nm (purple light) driving, can 450nm (blue light) driving, can 515nm (green light) driving, can
620nm (feux rouges) driving etc., the variation of the luminous signal of quantum dot film are further converted to voltage signal, from temperature sensing
It is shown on device.The quantum dot be selected from CdSe, PbSe, PbS, PbSe/CdSe, PbS/CdS, AgS, HgS, CdTe, CdTe/CdS,
At least one of CdTe/CdZnS, InP, InP/ZnS and InP/ZnSeS.Further, the thickness of the quantum dot film
For 10-30nm.
Further, the temperature of external environment locating for the temperature sensor is the solid-liquid critical-temperature T of mercaptan ligandm
±30K.The temperature sensor in low temperature range, increase by the optical characteristics sensitivity of above-mentioned quantum dot film.Further,
The temperature of external environment locating for temperature sensor is the solid-liquid critical-temperature T of mercaptan ligandm± 10K, the temperature sensor
In the solid-liquid critical-temperature T of mercaptan ligandmCan preferably occur wavelength mobile (i.e. quantum dot and quantum dot within the scope of ± 10K
Energy transfer changes), thus the sensitivity of temperature sensor is more.
Further, the device current variation with temperature rule of the temperature sensor is as follows: when the environment temperature of device
When degree matches body solid-liquid critical-temperature Tm (K) lower than mercaptan, temperature sensor electric current is I1 and launch wavelength is A1；And device
When environment temperature is higher than critical-temperature Tm (K), senser element electricity sulphur is I2 and launch wavelength is A2.Protractor under two states
Part electric current I1 < I2, launch wavelength A1 < A2；Therefore letter can be carried out very well in body solid-liquid critical-temperature variation range in mercaptan
Number transmission.During this, temperature sensor be in mercaptan with body solid-liquid critical-temperature Tm (K) below when, quantum dot film
In mercaptan ligand be in orderly state, fluorescence intensity enhancing, the nonradiative transition of quantum dot film reduce, and then temperature passes
Sensor electric current also reduces, otherwise being higher than when mercaptan matches body solid-liquid critical-temperature Tm (K) then has opposite state.The temperature sensing
Device works under the certain exciting light of LED chip (such as 365nm) and order excited state.
Any one of the material of the anode in ITO and TFO.The material of the cathode be selected from Al, LiF/Al,
Ca、Ba、Ca/Al、LiF/Ag、Ca/Ag、BaF2、BaF2/Al、BaF2/Ag、BaF2/Ca/Al、BaF2/ Ca, Ag, Mg, CsF/Al and
CsCO3Any one in/Al, wherein "/" is expressed as composite material.
Further, the preparation method of the quantum dot film in the temperature sensor, includes the following steps:
S01: initial quantum point solution is provided, is combined with the amount of initial ligand in the initial quantum point solution containing surface
Sub- point；
S02: selecting liquid deposition on substrate for the initial quantum, obtains initial quantum point film；
S03: the dispersion liquid containing mercaptan ligand is provided, the initial quantum point film is placed in the dispersion liquid and is carried out
Immersion treatment obtains the quantum dot film.
Further, in step S01, the preparation method of initial quantum point solution is prepared using conventional oily phase method.
The size range 1-10nm of quantum dot therein, the Bohr radius of quantum dot are greater than the particle size of quantum dot.Quantum dot
The objective scope of Bohr radius be 10-50nm, the value in the section be not it is continuous, corresponding value is corresponding above-mentioned difference
The quantum dot of type.The quantum dot is CdSe, PbSe, PbS, PbSe/CdSe, PbS/CdS, AgS, HgS, CdTe, CdTe/
CdS, CdTe/CdZnS, InP, InP/ZnS, InP/ZnSeS etc., but not limited to this, wherein "/" is expressed as the quantum of core-shell structure
Point.Further, the quantum dot is oil-soluble quantum dot, and quantum dot surface connects initial ligand, that is, oil-soluble ligand, described
Initial ligand is oil-soluble long-chain Ligand, such as oleic acid (OA), oleyl amine (OAm) trioctylphosphine phosphorus (TOP), trioctylphosphine oxygen phosphorus (TOPO)
It is without being limited thereto.The preparation temperature range of initial quantum point solution is 100~380 DEG C, and preparing environment is atmosphere of inert gases, most
Eventually, initial quantum point solution is prepared into the quantum dot solution that concentration is 10-40mg/mL.
Further, in above-mentioned steps S02, one layer of initial quantum point film of preparation is deposited with the mode of coating or printing.
At this point, the concentration range of initial quantum point solution can be 10-40mg/mL, the thickness range of the initial quantum point film can
Think 10-30nm, the environment for preparing of the initial quantum point film is atmosphere of inert gases.
It further, further include that the quantum dot film is placed in pole after the immersion treatment in step S03
The step of being cleaned in property solvent.
Specifically, the polar solvent is identical as the solvent in the dispersion liquid, in ethyl alcohol, methanol and acetonitrile extremely
Few one kind；The time of the cleaning is 10-30min.It further include carrying out the quantum dot film after the immersion treatment
Dry step.The temperature of the drying is 60-150 DEG C, and the time of the drying is 10-30min.
The concentration range of the mercaptan ligand is 0.05-0.2mmol/mL, and the purpose of mercaptan ligand is by quantum dot surface
Oily phase ligand fall to exchange, the pole without containing mercaptan ligand will be immersed in again by the ligand modified quantum dot film of mercaptan
Property solvent in cleaned, the purpose of soaking time range of the quantum dot film is 10-30min, the polar solvent is pair
Quantum dot film after exchange is cleaned, and the dressing agent of excess surface is removed.
Further, after the immersion treatment, further include the steps that for the quantum dot film being dried.Institute
Stating dry temperature is 60-150 DEG C；The time of the drying is 10-30min.The drying process will carry out cleaning
Quantum dot solid film is dried using certain heat treatment range.Further, above-mentioned cleaning, drying process can be repeated to make
It is standby, better effect.
The present invention successively carried out test of many times, and it is further detailed as reference pair invention progress now to lift A partial experiment result
Thin description, is described in detail combined with specific embodiments below.
Embodiment 1
Preparing for PbS quantum is as follows:
1) plumbi oleas { Pb (OA)2Precursor preparation:
The lead acetate trihydrate of 0.6mmol, 2ml oleic acid (OA), 10mL 18 dilute (ODE) is taken to be added in three-necked flask,
First room temperature is vented 20min, and temperature is reduced to 120 DEG C after then temperature is increased to 150 DEG C of stirring 30min.
2) preparation of sulphur (S) precursor:
Claim the S of 4mmol to be added in the trioctylphosphine oxygen phosphorus (TOP) of 6mL, is heated to 170 DEG C of maintenance 30min, then cools down
To 140 DEG C.
3) 1) after the mixeding liquid temperature in being increased to 150 DEG C, sulphur (S) precursor of 2mL is taken to be rapidly injected in flask
React 10min, after taking out that heating mantle liquid temperature to be mixed is cold rapidly and going to room temperature by add extractant and precipitating reagent carry out from
Heart separation cleaning obtains oil-soluble PbS near-infrared quantum dots and is dried, and then disperses dry oil-soluble quantum dot
The solution that concentration is 30mg/ml is prepared into n-hexane, the ligand on surface is oleic acid (OA).
Embodiment 2
It is as follows using dithioglycol modification quantum dot solid film:
1) suitable dithioglycol dispersion is taken to keep solid dithioglycol complete by the way of low-grade fever (< 60 DEG C) in ethanol
Full dispersion is prepared into the solution that concentration is 0.1mmol/mL.
2) PbS quantum prepared in above-described embodiment 1 is taken to prepare one layer of solid film by the way of printing or coating, so
Afterwards by the quantum dot solid film be immersed in it is above-mentioned 1) in impregnate 30min in the solution containing dithioglycol.
3) by impregnated containing the PbS quantum solid film of dithioglycol solution be immersed in again without containing dithioglycol
Ethanol solution in 30min, then take out carry out 80 DEG C heat-treatment of annealing it is dry.
Embodiment 3
A kind of temperature sensor of quantum dot solid-state film preparation is modified using using dithioglycol, as shown in Figure 1.
1) on blue-light LED chip from bottom to top be sequentially prepared transparent substrates, lead plating layer, quantum dot layer, electrode；
Wherein quantum dot layer is the quantum dot film obtained using 2 preparation flow of above-described embodiment.
2) when temperature sensor being then respectively placed in 200K and 260K temperature value, the current signal of sensor is tested
I1, I2 and optical signalling value A1, A2；Observe I1 < I2 and optical signalling value A1 < A2: show the sensor temperature 232 ±
Within the scope of 30K, which, which has, relatively sensitively senses effect.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of temperature sensor, which is characterized in that the temperature sensor is arranged in LED chip, the temperature sensor
Including the anode and cathode being stacked, and the quantum dot film being arranged between the anode and cathode, the anode or
The cathode is adjacent with the LED chip, and the quantum dot film is made of the quantum dot that surface is connected with mercaptan ligand.
2. temperature sensor as described in claim 1, which is characterized in that the solid-liquid critical-temperature T of the mercaptan ligandmIt is less than
Equal to 10 DEG C.
3. temperature sensor as claimed in claim 2, which is characterized in that the mercaptan ligand be selected from n-butyl mercaptan, hexyl mercaptan,
At least one of eight mercaptan, dithioglycol, succinimide mercaptans and ethanthiol.
4. temperature sensor as described in claim 1, which is characterized in that the LED chip is blue-light LED chip, green light LED
Any one in chip and red LED chip.
5. temperature sensor as described in claim 1, which is characterized in that a length of 300- of the excitation light wave of the LED chip
700nm。
6. temperature sensor as described in claim 1, which is characterized in that the quantum dot be selected from CdSe, PbSe, PbS,
In PbSe/CdSe, PbS/CdS, AgS, HgS, CdTe, CdTe/CdS, CdTe/CdZnS, InP, InP/ZnS and InP/ZnSeS
It is at least one.
7. temperature sensor as described in claim 1, which is characterized in that the quantum dot film with a thickness of 10-30nm.
8. temperature sensor as claimed in claim 7, which is characterized in that the temperature of external environment locating for the temperature sensor
Degree is Tm±30K。
9. temperature sensor as described in claim 1, which is characterized in that the material of the anode appointing in ITO and TFO
It anticipates one kind.
10. temperature sensor as described in claim 1, which is characterized in that the material of the cathode be selected from Al, LiF/Al, Ca,
Ba、Ca/Al、LiF/Ag、Ca/Ag、BaF2、BaF2/Al、BaF2/Ag、BaF2/Ca/Al、BaF2/ Ca, Ag, Mg, CsF/Al and
CsCO3Any one in/Al.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113125033A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | Fluorescent thermosensitive composite quantum dot material, preparation method thereof and environment temperature monitoring LED |
| CN114242923A (en) * | 2021-11-12 | 2022-03-25 | 华南理工大学 | Method for improving performance of electroluminescent device by modifying indium phosphide quantum dots through thiol compound interface |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130140506A1 (en) * | 2011-05-12 | 2013-06-06 | University Of Washington Through Its Center For Commercialization | Host-guest materials having temperature-dependent dual emission |
| CN104165706A (en) * | 2014-08-15 | 2014-11-26 | 吉林大学 | Manufacturing method and temperature detection method for PbSe quantum dot liquid-core optical fiber temperature sensor |
| CN105222918A (en) * | 2015-09-24 | 2016-01-06 | 宁波工程学院 | A kind of ratio temperature sensor based on codope quantum dot |
| CN106449121A (en) * | 2016-11-29 | 2017-02-22 | 吉林大学 | CdS/TiO2 composite nanofilm, as well as preparation method and application thereof |
| CN106525273A (en) * | 2016-11-24 | 2017-03-22 | 哈尔滨工业大学 | Cell temperature sensor based on quantum dot film and preparation method |
| CN106938840A (en) * | 2017-03-20 | 2017-07-11 | 中国科学院宁波材料技术与工程研究所 | The preparation method and its product of a kind of carbon quantum dot for TEMP |
| CN107271509A (en) * | 2017-06-12 | 2017-10-20 | 浙江师范大学 | A kind of preparation method of optical electro-chemistry sensing electrode |
-
2017
- 2017-12-29 CN CN201711470250.1A patent/CN109990915B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130140506A1 (en) * | 2011-05-12 | 2013-06-06 | University Of Washington Through Its Center For Commercialization | Host-guest materials having temperature-dependent dual emission |
| CN104165706A (en) * | 2014-08-15 | 2014-11-26 | 吉林大学 | Manufacturing method and temperature detection method for PbSe quantum dot liquid-core optical fiber temperature sensor |
| CN105222918A (en) * | 2015-09-24 | 2016-01-06 | 宁波工程学院 | A kind of ratio temperature sensor based on codope quantum dot |
| CN106525273A (en) * | 2016-11-24 | 2017-03-22 | 哈尔滨工业大学 | Cell temperature sensor based on quantum dot film and preparation method |
| CN106449121A (en) * | 2016-11-29 | 2017-02-22 | 吉林大学 | CdS/TiO2 composite nanofilm, as well as preparation method and application thereof |
| CN106938840A (en) * | 2017-03-20 | 2017-07-11 | 中国科学院宁波材料技术与工程研究所 | The preparation method and its product of a kind of carbon quantum dot for TEMP |
| CN107271509A (en) * | 2017-06-12 | 2017-10-20 | 浙江师范大学 | A kind of preparation method of optical electro-chemistry sensing electrode |
Non-Patent Citations (1)
| Title |
|---|
| 顾鹏飞: "胶质PbSe量子点温度依赖的发光特性及其应用", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113125033A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | Fluorescent thermosensitive composite quantum dot material, preparation method thereof and environment temperature monitoring LED |
| CN114242923A (en) * | 2021-11-12 | 2022-03-25 | 华南理工大学 | Method for improving performance of electroluminescent device by modifying indium phosphide quantum dots through thiol compound interface |
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| CN109990915B (en) | 2020-09-22 |
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