CN107240544B - A kind of preparation method of graphical film, thin film transistor (TFT) and memristor - Google Patents
A kind of preparation method of graphical film, thin film transistor (TFT) and memristor Download PDFInfo
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- CN107240544B CN107240544B CN201710309424.XA CN201710309424A CN107240544B CN 107240544 B CN107240544 B CN 107240544B CN 201710309424 A CN201710309424 A CN 201710309424A CN 107240544 B CN107240544 B CN 107240544B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02612—Formation types
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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Abstract
The invention discloses a kind of patterning preparation method of film, this method constructs microchannel by template and substrate, moves drop in microchannel using the driving force that immersional wetting of the film precursor liquid drop to substrate generates and realizes the graphical of film.This method is simple and feasible, wide adaptation range, can be used for realizing the pattern customization of all kinds of film forerunner liquors or suspension.The invention discloses a kind of preparation method of thin film transistor (TFT), any layer in the semiconductor channel layer of the thin film transistor (TFT), insulate gate dielectric layer, source-drain electrode layer and gate electrode layer is prepared using the patterning preparation method of above-mentioned film.The invention also discloses a kind of preparation method of memristor, the bottom electrode layer of the memristor, any layer in change resistance layer and top electrode layer is prepared using the patterning preparation method of above-mentioned film.
Description
Technical field
The present invention relates to technical field of film preparation, more particularly to a kind of graphical film, thin film transistor (TFT) and memristor
The preparation method of device.
Background technique
Due to not needing vacuum condition, instrument and equipment is simple, can be in various matrix surface plated films, and wet process coating technique is in reality
The low temperature low-cost large-area of existing electronic component film and other species thin films preparation aspect has unique advantage, in film
Preparation field is used widely.
Wet process coating technique mainly has czochralski method, spin-coating method etc., and precursor liquid of such method based on specific components passes through plating
The operations such as film and subsequent heat treatment obtain required film.For wet process coating process, can only generally prepare in large area
Entire film and film difficult to realize it is graphical.For such coating process, if the film to be realized is graphical, need
The preparation that first carry out film, is patterned film in conjunction with the methods of traditional wet etching or photoetching.Such work
That there are process routes is long for skill, and the problem that processing procedure is complicated and cost is high is inevitably restricted in practical applications.
Also may be implemented the graphical of film by micro nano transfer printing technology, the realization of transfer be based on material to be transferred for
Template is different with the adhesion energy of substrate, so needing to be surface-treated base material in practical applications.In addition, transfer effect
The speed that fruit is also opened with template etc. is related, since influence factor is more, it is difficult to ensure that the success rate of transfer in practical operation.Closely
Nian Lai can realize the graphical of film by UV-curing technology while plated film, but before the technique requires film
Driving liquid has strong absorption to the ultraviolet light of specific wavelength, therefore there are biggish limitation when the technique drives liquid type before the selection,
Realizing Film patterning aspect, preparation method shortage versatility.
To sum up, in current Film patterning preparation process route, still lack a kind of can both deposit in film
Film graphical is realized in the process and to precursor liquid not harsh requirement and easy-to-use preparation method.
Summary of the invention
To achieve the above object, the present invention provides a kind of preparation method of graphical film, using template and substrate it
Between the microchannel that is formed deposit precursor liquid capillary percolation in film same by the capillarity between precursor liquid and substrate
Shi Shixian is graphical.
A kind of preparation method of graphical film, includes the following steps:
Step 1, prepare film precursor liquid, and select substrate；
Step 3, a pre-prepd figuratum template of band is selected, and the template is posted and fixed in hydrophilic treated
On substrate afterwards；
Step 4, the film precursor liquid is added dropwise at the microchannel both ends that template and substrate are formed, and makes the film forerunner
Liquid sufficiently infiltrates template both ends；
Step 6, confirm film primary solidification after remove removing template, then to substrate and on film make annealing treatment,
Complete the graphical preparation of film.
The key of the preparation method of graphical film proposed by the present invention is film precursor liquid (solution or suspension) energy
It is enough preferably to infiltrate selected substrate, using the mechanism of capillarity, realize infiltration migration of the drop in microchannel, most end form
At graphical film.
Capillarity, i.e., it is small to the comparable capillary of the radius of curvature of liquid concave meniscus in some pipe diameters, it manages
Interior liquid infiltrates tube wall and is bent liquid surface, the superficial water molecule on concave meniscus due to surface tension effect and generate
The liquid level made in pipe is increased in the vertical direction by the pulling of this active force, makes liquid by the power of one direction gas phase side
Body rises along tube wall；If acted in the horizontal direction, such power will drive drop to sprawl to pipeline internal penetration.
Preferably, the substrate be the hard substrate with flat surface such as silicon wafer, thermal oxide silicon wafer, glass slide or
Person is the flexible substrate with flat surface such as PET, PI, PDMS.
Preferably, the template be the soft template based on flexible macromolecule, such as PDMS or other can be with substrate
Form the hard template of microchannel；Hard template is easier to realize pattern customization；PDMS is at low cost, using simple, with substrate it
Between there is good adhesiveness, and have the characteristics that good chemical inertness, facilitate and customize various patterns.
Preferably, the film precursor liquid is solution based on water or organic solvent or outstanding based on water or organic solvent
Supernatant liquid, preferably, the film precursor liquid can be selected indium, gallium, zinc, cadmium, tin aluminium, yttrium, hafnium, zirconium etc. inorganic salt solution or
The wherein solution or suspension of the mixed solution of the inorganic salts of several metal and graphene, class grapheme two-dimension material, institute
The class grapheme two-dimension material stated is graphene oxide or two-dimensional layer transition metal carbide (MXene)；Further preferably, institute
State the suspension of nitrate solution or MXene that film precursor liquid is indium gallium cadmium.
In step 2, it is described to substrate carry out hydrophilic treated can by physical method for example oxygen plasma bombardment realize or
It is handled and is realized by the mixed liquor of chemical method such as sulfuric acid and hydrogen peroxide.
Preferably, the pattern in the template is strip striped, width of fringe and fringe spacing are in 0~100 μ
Between m, so that for the microchannel size formed between the substrate and the template also between 0~100 μm, selection should
The microchannel of width, preparation has suitable the ratio of width to height, if the width of fringe used is excessive, template is bonded institute's shape on substrate
At microchannel be easy recess, be unfavorable for the holding of anticipated shape and structure.
In step 3, the template fixation procedure is preferred are as follows: acts on the counterweight that a quality is 50~300g described
In template, and the template posts and fixes the time kept over the substrate between 30-300s.
In step 5, the evaporation process of the film precursor liquid solvent can be preferred are as follows: passes through heating, drying or solvent
Natural evaporation realize the primary solidification of graphical film.
In step 6, conversion of the precursor liquid to semiconductive thin film is realized by heating, the temperature of the annealing is excellent
100~400 DEG C are selected as, in the annealing region, provided thermal energy allows most of film precursor liquid to be converted into enough
Final semiconductive thin film, and the preparation of semiconductive thin film can be completed in 400 DEG C of temperature lower in this way.
On the other hand, the present invention provides a kind of preparation method of thin film transistor (TFT), the thin film transistor (TFT) is partly led
Any layer in body channel layer, insulation gate dielectric layer, source-drain electrode layer and gate electrode layer is using above-mentioned method system of the invention
It is standby.
It is different according to the property of prepared film, it will be selected when preparing thin film transistor (TFT) different function layer different
Film precursor liquid.For semiconductor channel layer, more options indium, zinc, tin inorganic salt solution, based on indium, zinc, tin it is a variety of inorganic
Mixed salt solution, the solution or suspension of class grapheme two-dimension material (such as graphene oxide, MXene)；For insulation gate medium
Layer, more options can be used in preparing high dielectric constant, the film precursor liquid of height electric leakage rejection ability, such as aluminium, the nitrate of yttrium,
Hafnium, villaumite of zirconium etc.；For source-drain electrode and gate electrode, the inorganic salts of the higher material of more options intrinsic carrier concentration, such as
It is used to prepare the indium of ITO electrode, the inorganic salt solution or mixed solution of tin also can choose the nothing of the zinc to prepare AZO
Machine salting liquid or Diversity solution.
The third aspect, the present invention provides a kind of preparation method of memristor, the bottom electrode layer of the memristor, resistive
Any layer in layer and top electrode layer is prepared using the above-mentioned method of the present invention.
The top electrode and hearth electrode of the memristor can select the above-mentioned precursor liquid for preparing source-drain electrode, and change resistance layer can be with
Selection is used to prepare the precursor liquid of above-mentioned semiconductor channel layer and the gate dielectric layer that insulate.
Compared to realizing Film patterning technique by two-step method in traditional wet process coating process, equally can be real
Under the premise of now thin-film patterning, method proposed by the present invention does not influence the quality of plated film, is not necessarily to complex device, coating cost
It is low.This method is widely applicable, and solution or suspension of the film precursor liquid either based on water or organic solvent can pass through
This method realizes the deposition of film and graphical.In addition, this method can realize simultaneously the heavy of film in membrane-film preparation process
It is long-pending and graphical, other than having solwution method and preparing the low-cost advantage of film, also have process simple, strong operability it is bright
Aobvious feature.
Detailed description of the invention
Fig. 1 is the schematic diagram that substrate and template constitute microchannel in the preparation process of graphical film of the invention；
Fig. 2 is that the present invention realizes Film patterning operational flowchart；
Fig. 3 is the preparation method flow chart of graphical film of the invention；
Fig. 4 is the optical microscope photograph of the graphical MXene prepared in embodiment 1；
Fig. 5 is that the optical microscopy of the graphical indium gallium cadmium sull electrical performance testing prepared in embodiment 2 shines
Piece；
Fig. 6 is the I-V response curve of the graphical indium gallium cadmium sull prepared in embodiment 2；
Fig. 7 is the transfer characteristic curve of the graphical indium gallium cadmium sull prepared in embodiment 3；
Fig. 8 is the output characteristic curve of the graphical indium gallium cadmium sull prepared in embodiment 3；
Fig. 9 is the structural schematic diagram of the memristor prepared in embodiment 4.
Specific embodiment
In order to more specifically describe the present invention, with reference to the accompanying drawing and specific embodiment is to technical solution of the present invention
It is described in detail.
The key of the method for the present invention is that microchannel can be constructed by template, referring to Fig. 1, is embodied as this method
Template and the structural schematic diagram after substrate attaching in example comprising substrate, the template above substrate, and by substrate and mould
The microchannel that plate is constructed jointly.It should be pointed out that for aqueous solution, to substrate carry out the necessity of hydrophily processing with it is important
Property is that the substrate after hydrophilic treated provides good infiltration interface, so solution can preferably infiltrate substrate,
The power for pulling solution to permeate into microchannel is generated in impregnation process due to the surface tension effects of liquid level, drives solution
Constantly enter in microchannel.
In the method, substrate provides the interface of infiltration, and the microchannel to be formed that fits closely of template and substrate provides
The good template of pattern customization, realizes the patterning of film precursor liquid by capillarity of the liquid in template, will be molten
The patterning for being achieved that film is dried in agent, and main process is as shown in Figure 2.
Film patterning operating process is realized in the present invention as shown in figure 3, primary operational includes preparing precursor liquid, preparation
Template, is added dropwise precursor liquid and dries, goes removing template and annealing etc. building microchannel, can finally obtain patterned film.
Embodiment 1
With made membrane precursor liquid: dispersing MXene in ethyl alcohol and obtain MXene suspension；It needs to be surpassed before use
Acoustic shock, which is swung, prevents MXene particle from settling for 5 minutes or so.
The selection and processing of template: the upper template by the standby bar shaped out of optical graving on a silicon substrate, by macromolecule prepolymer
DOW CORNING SYLRARD184 and its curing agent are mixed in a certain ratio uniformly and obtain template precursor liquid after low pressure deaeration；It will
Have figuratum substrate to be placed in plastic culture dish, slowly topple over template precursor liquid, template precursor liquid is made to be totally submerged substrate,
PDMS heat preservation a period of time is made into its solidification in electrothermal blast furnace, finally the PDMS template after solidification is carefully opened, is obtained
Patterned PDMS template.
Choose and handle substrate: since the surface smoothness degree of silicon wafer is high, the p-type silicon chip that the present embodiment chooses heavy doping is made
For substrate, and successively substrate is cleaned using acetone, second alcohol and water, scavenging period is respectively 10 points, 10 minutes, 5 minutes.
The advantages that processing is simple since oxygen plasma treatment method has, short processing time, high-efficient, the present embodiment uses model
The oxygen plasma machine of II -862 type of Plasma Preen carries out hydrophilic treated, the oxygen of oxygen plasma machine to the substrate after cleaning
Throughput is arranged between 4~5SCFH, power setting 250W, and the hydrophilic treated time is 2 minutes.
Construct microchannel: the one pre-prepd PDMS template with bar paten of selection is fitted in through over cleaning and parent
On the substrate of water process, and applying pressure keeps template close with substrate attaching.It should be noted that two when preparing template
It has to reserve microchannel in end.
Precursor liquid is added dropwise and dries: by MXene hanging drop, in PDMS template, there are the both ends of microchannel, and make its covering
Template both ends with microchannel；The counterweight of 50g or so is placed above template, it is ensured that enter microchannel in the suspension
During remain between template and substrate and closely contact.After 5-10 minutes, observe that liquid level no longer moves in microchannel
It is dynamic, counterweight is removed, after the residual liquid on substrate is blotted, is dried ethyl alcohol in electric drying oven with forced convection, due to MXene's
Heat sensitivity, so temperature is 40 DEG C or so by the present invention, drying time is 30 minutes or so.If film precursor liquid is to temperature
More sensitive, the drying of precursor liquid is preferably able to carry out under vacuum.The advantage handled in this way is, on the one hand, under vacuum,
The boiling point of ethyl alcohol equal solvent will reduce, and temperature can be completed at a lower temperature for the removing of solvent, and it is heated to can be avoided solute
And the series reaction occurred；On the other hand, under vacuum, solvent by thermal evaporation will be become to be more easier, thus microchannel
The removing of internal solvent will be more also more thorough rapidly.
It removes removing template: carefully tearing template since one jiao of template, finally obtain as shown in Figure 4 graphical thin
Film.
By In (NO3)3, Ga (NO3)3With Cd (NO3)3It successively dissolves in ethanol, is made by the molar ratio of 2:2:1
The nitrate solution of the indium gallium cadmium of 0.5Mol/L, stir is uniformly mixed solution at room temperature.Later using 0.22 μm
PTFE filter is filtered the solution, obtains transparent clear film precursor liquid.
The preparation process of template is identical with embodiment 1, in this example, the template microchannel width of use and micro-
Spacing between channel is 80 μm.
This example selects the thermal oxide layer of No.46 Research Institute, China Electronic Science Group Co., Ltd with a thickness of the p of 100nm
Type heavy doping thermal oxide silicon wafer.Before use, only needing that the particulate matter of thermal oxide silicon chip surface is removable without volume using nitrogen
Outer cleaning process.Hydrophilic treated is carried out to the thermal oxide silicon wafer later, processing parameter is in the same manner as in Example 1.
Template after solidification is fitted tightly over thermal oxidation silicon on piece, microchannel is reserved at the both ends of template, will configure
The nitrate solution of good indium gallium cadmium is dripped respectively in the microchannel exit of template two sides, and applies the weight of 50g above template
Code is to ensure fitting closely between template and thermal oxide silicon wafer during this.
After 5-10 minutes, observes that liquid level no longer moves in microchannel, removes counterweight, the residual liquid on substrate is blotted
Afterwards, ethyl alcohol is dried in electric drying oven with forced convection.The temperature setting of electric drying oven with forced convection is 50 DEG C, and the time is 30 minutes.
After solvent volatilization is dry, template is carefully opened from one jiao of template, obtains the patterned film containing indium gallium cadmium nitrate.
The patterned film containing indium gallium cadmium nitrate is handled using air anneal furnace, specific process are as follows:
300 DEG C are increased to from room temperature, the heating-up time is 45 minutes, keeps the temperature 60 minutes in the case where this is 300 DEG C later, and then, furnace to be annealed is slow
Sample is taken out after slow cool down to room temperature.
Plated with nickel gold electrode is steamed by electron beam evaporation on the indium gallium cadmium sull for being located at thermal oxidation silicon on piece.Its
In, electrode is realized by metal mask plate and is patterned, and the electrode of vapor deposition is strip electrode, the indium gallium cadmium oxide of electrode and bar shaped
Vertically.Evaporation plating parameter are as follows: the plated film rate of metallic nickel is
Coating film thickness is 50nm, and golden plated film rate is
Coating film thickness is 20nm.
The electric conductivity of patterned indium gallium cadmium oxide is characterized.Using semiconductor parameter instrument (Keithley
4200) electrical performance testing is carried out to the indium gallium cadmium sull, the way of contact of probe and film is as shown in figure 5, thin
Current-voltage (I-V) response curve of film is as shown in Figure 6.
Embodiment 3
By In (NO3)3, Ga (NO3)3With Cd (NO3)3It successively dissolves in ethanol, is made by the molar ratio of 2:2:1
The solution of 0.08Mol/L, stir is uniformly mixed solution at room temperature.
The preparation of template is identical with embodiment 1 with patterning process, and in the present embodiment, the template of use is micro- logical
Spacing between road width and microchannel is 80 μm.Select the heat of No.46 Research Institute, China Electronic Science Group Co., Ltd
Oxidated layer thickness is the p-type heavy doping thermal oxide silicon wafer of 100nm.Thermal oxide silicon chip surface is carried out at cleaning using ordinary nitrogen
Reason, is then fitted tightly over thermal oxidation silicon on piece for the template after solidification, reserves microchannel at the both ends of template.It will configure
The nitrate solution of indium gallium cadmium dripped respectively in the microchannel exit of template two sides.
After standing 5-10 minutes, after the residual liquid on substrate is blotted, dried in 60 DEG C of electric drying oven with forced convection
Ethyl alcohol was dried in 60 minutes, then open template, obtains patterning the film containing indium gallium cadmium nitrate.
Film using patterning of the tubular annealing furnace to substrate and on substrate containing indium gallium cadmium nitrate carries out
Annealing.Treatment process are as follows: 300 DEG C will be increased to from tubular annealing furnace chamber temperature, the heating-up time is 45 minutes, then 300
60 minutes are kept the temperature at DEG C, furnace to be annealed takes out sample after being slowly cooled to room temperature.
Plated with nickel gold electrode is steamed by electron beam evaporation on the indium gallium cadmium sull for being located at thermal oxidation silicon on piece.Its
Middle electrode realizes by metal mask plate and patterns that the electrode of vapor deposition is strip electrode, the indium gallium cadmium oxide of electrode and bar shaped
Vertically.Evaporation plating parameter are as follows: the plated film rate of metallic nickel is Coating film thickness is 50nm, and golden plated film rate is
Coating film thickness is 20nm.
Sample is made annealing treatment in air to improve the Ohmic contact between source-drain electrode and oxide semiconductor,
300 DEG C are annealed into, the time is 60 minutes.
The electric conductivity of patterned indium gallium cadmium oxide is characterized.Using semiconductor parameter instrument (Keithley
4200) electrical performance testing is carried out to the metal-oxide film.Before testing, in one jiao of scraping of the thermal oxide piece, make to make
It is exposed for the silicon substrate of hearth electrode.The transfer characteristic curve and output characteristic curve for finally measuring the thin film transistor (TFT) are distinguished
As shown in Figure 7 and Figure 8, calculating gained field effect transistor saturation mobility is 1.98cm2/(V s)。
Embodiment 4
By Al (NO3)3Dissolution in deionized water, is made into the solution of 0.3Mol/L, and stir makes solution mixed for 6 hours at room temperature
It closes uniform.
The preparation of template and patterning process are same as Example 2, in addition, used template and substrate and substrate
Pretreatment process is also same as Example 2.Later, template is fitted tightly over the thermal oxidation silicon on piece by hydrophilic treated,
The both ends of template reserve microchannel.Configured aluminum nitrate solution is dripped respectively in the microchannel exit of template two sides.
After standing 5-10 minutes, after the residual liquid on substrate is blotted, dried in 60 DEG C of electric drying oven with forced convection
Solvent was dried in 60 minutes.Then template is opened, patterned film is obtained.
Later, patterned film is made annealing treatment using air anneal furnace, specific process are as follows: be increased to from room temperature
350 DEG C, the heating-up time is 54 minutes, 120 minutes is kept the temperature at 350 DEG C later, then, after furnace to be annealed is slowly cooled to room temperature
Sample is taken out.
Lateral silver electrode is deposited on the aluminium oxide strip film of preparation by electron beam evaporation.Wherein, electrode is logical
It crosses metal mask plate and realizes patterning.The electrode of vapor deposition is strip electrode, the film normal of electrode and bar shaped, evaporation plating parameter are as follows:
The plated film rate of metallic silver isCoating film thickness is 50nm.
Finally, being carried out using electric property of the semiconductor parameter instrument (Keithley 4200) to patterned aluminium oxide
Characterization, the structural schematic diagram of prepared memristor are as shown in Figure 9.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (7)
1. a kind of preparation method of graphical film, comprising:
Step 1, prepare film precursor liquid, and select substrate, wherein the film precursor liquid be indium, gallium, zinc, cadmium, tin, aluminium,
Yttrium, hafnium, the inorganic salt solution of zirconium or the wherein mixed solution of several metal inorganic salt and graphene, class graphene two dimension
The solution or suspension of material；
Step 2, the substrate is cleaned, and hydrophilic treated is carried out to the aufwuchsplate of cleaning back substrate；
Step 3, a pre-prepd figuratum template of band is selected, and the template is posted and fixed after hydrophilic treated
On substrate；
Step 4, the film precursor liquid is added dropwise at the microchannel both ends that template and substrate are formed, and fills the film precursor liquid
Sub-dip moistens template both ends；
Step 5, wait for quietly, it is to be seen no longer to be moved in microchannel to the film precursor liquid, carry out film precursor liquid solvent
Evaporation process completes the primary solidification of graphical film；
Step 6, confirm film primary solidification after remove removing template, then to substrate and on film carry out temperature be 100~400
DEG C annealing, complete the graphical preparation of film.
2. the preparation method of graphical film as described in claim 1, which is characterized in that the substrate is silicon wafer, hot oxygen
Any one of SiClx piece, glass slide, PET, PI, PDMS.
3. the preparation method of graphical film as described in claim 1, which is characterized in that the template is based on flexible high
The soft template of molecule or the hard template that microchannel is formed with substrate.
4. the preparation method of graphical film as claimed in claim 1 or 3, which is characterized in that the pattern in the template
For strip striped, width of fringe and fringe spacing are between 0~100 μm.
5. the preparation method of graphical film as described in claim 1, which is characterized in that the template fixation procedure are as follows:
The counterweight that one quality is 50~300g is acted in the template, and the template posts and fixes over the substrate
The time of holding is between 30-300s.
6. a kind of preparation method of thin film transistor (TFT), which is characterized in that the semiconductor channel layer of the thin film transistor (TFT), insulation
Any layer in gate dielectric layer, source-drain electrode layer and gate electrode layer is using any method preparation of Claims 1 to 5.
7. a kind of preparation method of memristor, which is characterized in that the bottom electrode layer of the memristor, change resistance layer and top electrode layer
In any layer using any method preparation of Claims 1 to 5.
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| CN1877453A (en) * | 2006-07-07 | 2006-12-13 | 中国科学院长春应用化学研究所 | Method for making reverse ladder structure by using architecture-complementary micro-patterning technique |
| CN101061576A (en) * | 2004-06-21 | 2007-10-24 | 3M创新有限公司 | Patterning and aligning semiconducting nanoparticles |
| CN101080670A (en) * | 2004-12-13 | 2007-11-28 | 3M创新有限公司 | Method for patterning surface modification |
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| CN101061576A (en) * | 2004-06-21 | 2007-10-24 | 3M创新有限公司 | Patterning and aligning semiconducting nanoparticles |
| CN101080670A (en) * | 2004-12-13 | 2007-11-28 | 3M创新有限公司 | Method for patterning surface modification |
| CN1877453A (en) * | 2006-07-07 | 2006-12-13 | 中国科学院长春应用化学研究所 | Method for making reverse ladder structure by using architecture-complementary micro-patterning technique |
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