CN106525273A - Cell temperature sensor based on quantum dot film and preparation method - Google Patents

Cell temperature sensor based on quantum dot film and preparation method Download PDF

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Publication number
CN106525273A
CN106525273A CN201611044320.2A CN201611044320A CN106525273A CN 106525273 A CN106525273 A CN 106525273A CN 201611044320 A CN201611044320 A CN 201611044320A CN 106525273 A CN106525273 A CN 106525273A
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quantum dot
dot film
substrate
temperature sensor
cover plate
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CN201611044320.2A
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CN106525273B (en
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张昱
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Heilongjiang Industrial Technology Research Institute Asset Management Co ltd
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Harbin Institute of Technology
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00

Abstract

The invention provides a cell temperature sensor based on a quantum dot film which can measure a plurality of cells at the same time and can complete temperature measurement only by contact with the cells, and a preparation method, and belongs to the technical field of quantum dot film sensors. The temperature sensor includes a cover piece and a substrate, the cover piece is equipped with a microchannel structure, a quantum dot film is arranged on the substrate, the cover piece and the substrate are sealed, so that the microchannel structure and the quantum dot film form a closed cavity, and the cover piece is also provided with inlet/outlet holes of the cavity. The preparation method of the temperature sensor includes the following steps: 1. designing a microchannel structure, and manufacturing a mother board; 2. according to the mother board, manufacturing a cover piece with the designed microchannel structure, and punching inlet/outlet holes in the cover piece; 3. manufacturing a substrate, mixing a quantum dot solution and ultraviolet curing photoresist proportionally and then performing spin coating on the substrate, thereby preparing a quantum dot film; and 4. completing sealing-in of the cover piece and the substrate, so that the microchannel structure and the quantum dot film form a closed cavity.

Description

Cell temperature sensor based on quantum dot film and preparation method thereof
Technical field
The present invention relates to a kind of cell temperature sensor, more particularly to the cell temperature sensor based on quantum dot film and Preparation method, belongs to quantum dot film sensor technical field.
Background technology
The temperature survey of cellular level is a difficult problem in biomedical sector, and people will be not only promoted in its realization Physiology and pathological cognition of the class to cell, may also contribute to disease (cancer etc.) new diagnostic means with treatment meanss Exploitation.Traditional thermometric mode is divided into two big class of contact temperature-measuring and contactless temperature-measuring, but is all difficult to realize micro-nano-scale Cellular level temperature survey.
Quantum dot temperature sensor is the nova that fluorescence nano temperature sensor family rises up slowly, from one occurs The extensive attention of domestic and international researcher is received just.Quantum dot is by the elementary composition nanometer of II-VI group or iii-v Microcrystal, optical property of the size between 2~10nm, with uniqueness compared with traditional fluorescent marker:(1) quantum dot swashs Luminous spectrum width and it is continuous, and emission spectrum is narrow and symmetrical;Can be made in Same Wavelength exciting light by changing quantum dot size With the lower launching light obtained from ultraviolet wavelength any near infrared wavelength region;(2) quantum dot fluorescence intensity is high, more glimmering than organic Photoinitiator dye launches 20 times of light intensity, and good light stability is strong compared with organic fluorescent dye more than 100 times.These better opticals of quantum dot It is characterized in that what current all of fluorescent probe (various organic fluorescent dyes and various fluorescins) did not possessed, while Jing is specific The quanta point biological compatibility of chemical modification is good, almost no immunogenicity and antigenicity.
Fluorescence nano temperature sensor oneself be used for detect cell temperature change.But, based on nano material, molecular biosciences material The research of the thermoprobe of material is still in the starting stage.Wherein, need to be inserted into cell interior, thermometric when nanometer thermoelectric is occasionally used High precision, but a cell can only be measured every time, belonging to destructiveness has loss measurement;Quantum dot temperature sensor using when be also required to Cell by quantum dot swallow inside can just carry out thermometric, the biocompatibility of quantum dot the problems such as be carried out using which it is deep Research and application bring many problems and obstacle.
The content of the invention
For above-mentioned deficiency, the present invention provides a kind of while measuring multiple cells, and completes by only needing with cells contacting Thermometric a kind of cell temperature sensor based on quantum dot film and preparation method thereof.
The cell temperature sensor based on quantum dot film of the present invention, including cover plate and substrate;
MCA is carried on the cover plate, is provided with quantum dot film, cover plate and substrate sealing-in, makes on the substrate MCA forms the cavity of closing with quantum dot film, is additionally provided with the access hole of the cavity on cover plate.
Preferably, the MCA is cross raceway groove.
Preferably, the MCA includes sample stream raceway groove and sheath stream raceway groove, and the access hole of the cavity includes Sample stream access hole and sheath stream access hole.
Preferably, the cover plate with MCA is made using polydimethylsiloxane.
Preferably, the substrate is made using quartz glass or polydimethylsiloxane.
The preparation method of the cell temperature sensor based on quantum dot film, comprises the steps:
Step one:According to cell design MCA to be measured, motherboard is made according to the MCA of design;
Step 2:According to motherboard, make micro- logical with design using nanometer embossing using polydimethylsiloxane The cover plate of road structure, beats access hole on cover plate with card punch, then carries out oxygen plasma process to cover plate;
Step 3:Substrate is made using quartz glass or polydimethylsiloxane, by quantum dot solution and ultraviolet light polymerization Photoresist is spin-coated on after being mixed in proportion on substrate, prepares quantum dot film;
Step 4:Complete the sealing-in of cover plate and substrate:The cover plate that step one makes is placed on the substrate of step 2 making, It is put in ultraviolet stamping system, opens ultraviolet source, solidified, makes MCA and quantum dot film form the chamber of closing Body.
Preferably, in the step one:According to the diameter of cell to be measured, the height and width of MCA is designed, And then determine the width and the width of sheath stream raceway groove of sample stream raceway groove in MCA.
Preferably, in the step one, motherboard is made using silicon materials.
Preferably, the quantum dot film is CdSe/ZnS core-shell quanta dots thin film.
The beneficial effects of the present invention is, cell enters the MCA and quantum dot film of the present invention by access aperture Measure in the cavity of formation, not only possess traditional quantum dot temperature sensitive properties, multiple cells can be measured simultaneously, and be not required to To be swallowed by inside only needs to be in contact with it by cell and complete temperature survey.
Description of the drawings
Fig. 1 is the schematic flow sheet for preparing the cell temperature sensor based on quantum dot film.
Specific embodiment
With reference to Fig. 1 illustrate present embodiment, the cell temperature sensor based on quantum dot film described in present embodiment, Including cover plate 1 and substrate 2;
MCA is carried on the cover plate 1, is provided with quantum dot film, cover plate 1 and 2 envelope of substrate on the substrate 2 Connect, make MCA and quantum dot film form the cavity of closing, on cover plate 1, be additionally provided with the access hole of the cavity.
Cell to be measured is entered MCA by access hole and is formed in the cavity of closing, because cell with quantum dot film Structurally flexible, in the cavity by when produce slight deformation, can be realization with the quantum dot film close contact for preparing on substrate Cell temperature accurately good physical basis are established in measurement.After touching quantum dot film, process is subsequently acquired again, is obtained Temperature is obtained, can be measured into multiple cells simultaneously in the cavity of present embodiment.
In preferred embodiment, the MCA is cross raceway groove.
The height of the cross raceway groove of present embodiment is 10 microns, 200~300 microns of width.
In preferred embodiment, the MCA includes sample stream raceway groove and sheath stream raceway groove, the access hole of the cavity Including sample stream access hole and sheath stream access hole.
In preferred embodiment, the cover plate with MCA is made using polydimethylsiloxane.
The cover plate of present embodiment needs to realize by the motherboard for devising MCA, and motherboard is using losing in silicon materials The MCA for carving design is realized.Polydimethylsiloxane is poured on the silicon materials of etching MCA, is obtained Take cover plate.Polydimethylsiloxane has good adhesiveness with silicon.In preferred embodiment, the substrate 2 is using quartz Glass or polydimethylsiloxane are made.
With reference to Fig. 1, in present embodiment based on quantum dot film cell temperature sensor preparation method, including as follows Step:
Step one:According to cell to be measured, MCA is designed, according to the MCA of design, make motherboard;
Motherboard is made using silicon materials in present embodiment, according to the principle of suitable cell analysis, is charted using AutoCAD Software and Protel DXP softwares, design the height and width of MCA, according still further to the design principle of micro-fluid chip, if The sample stream raceway groove and sheath stream raceway groove of meter MCA, builds MCA.When measurement human body cell, it is contemplated that human body is thin The diameter of born of the same parents is usually 10~20 microns, and the MCA of the cover plate of present embodiment adopts cross raceway groove, 10 microns of height, 200~300 microns of width.
Step 2:According to motherboard, make micro- logical with design using nanometer embossing using polydimethylsiloxane The cover plate of road structure, beats access hole on cover plate with card punch, then carries out oxygen plasma process to cover plate, improve PDMS surfaces Characteristic makes it have hydrophilic;
Polydimethylsiloxane is poured on motherboard, is peeled off with motherboard after solidification, obtain cover plate.
The access hole of present embodiment includes sample access hole and sheath stream access hole.
Step 3:Substrate is made using quartz glass or polydimethylsiloxane, after cleaning, by CdSe/ZnS nucleocapsid quantum Point solution and ultraviolet light polymerization photoresist (Norland Optical Adhesive 61, abbreviation NOA61) are revolved after being mixed in proportion It is coated on substrate, prepares CdSe/ZnS core-shell quanta dots thin film;
Step 4:Complete the sealing-in of cover plate and substrate:The cover plate that step one makes is placed on the substrate of step 2 making, It is put in ultraviolet stamping system, opens ultraviolet source, solidified, makes MCA and quantum dot film form the chamber of closing Body.

Claims (9)

1. a kind of cell temperature sensor based on quantum dot film, it is characterised in that including cover plate and substrate;
MCA is carried on the cover plate, quantum dot film, cover plate and substrate sealing-in is provided with the substrate, is made micro- logical Road structure forms the cavity of closing with quantum dot film, is additionally provided with the access hole of the cavity on cover plate.
2. the cell temperature sensor based on quantum dot film according to claim 1, it is characterised in that the microchannel Structure is cross raceway groove.
3. the cell temperature sensor based on quantum dot film according to claim 1 and 2, it is characterised in that described micro- Channel design includes sample stream raceway groove and sheath stream raceway groove, and the access hole of the cavity includes that sample stream access hole and sheath stream come in and go out Hole.
4. the cell temperature sensor based on quantum dot film according to claim 3, it is characterised in that described with micro- The cover plate of channel design is made using polydimethylsiloxane.
5. the cell temperature sensor based on quantum dot film according to claim 4, it is characterised in that the substrate is adopted Made with quartz glass or polydimethylsiloxane.
6. the preparation method of the cell temperature sensor based on quantum dot film described in claim 1, it is characterised in that described Method comprises the steps:
Step one:According to cell design MCA to be measured, motherboard is made according to the MCA of design;
Step 2:According to motherboard, the knot of the microchannel with design is made using polydimethylsiloxane using nanometer embossing The cover plate of structure, beats access hole on cover plate with card punch, then carries out oxygen plasma process to cover plate;
Step 3:Substrate is made using quartz glass or polydimethylsiloxane, by quantum dot solution and ultraviolet light polymerization photoetching Glue is spin-coated on after being mixed in proportion on substrate, prepares quantum dot film;
Step 4:Complete the sealing-in of cover plate and substrate:The cover plate that step one makes is placed on the substrate of step 2 making, is put into In ultraviolet stamping system, ultraviolet source is opened, is solidified, make MCA and quantum dot film form the cavity of closing.
7. the preparation method of the cell temperature sensor based on quantum dot film according to claim 6, it is characterised in that In the step one:
According to the diameter of cell to be measured, the height and width of MCA is designed, and then determines sample stream in MCA The width of the width and sheath stream raceway groove of raceway groove.
8. the preparation method of the cell temperature sensor based on quantum dot film according to claim 6 or 7, its feature exist In in the step one, using silicon materials making motherboard.
9. the preparation method of the cell temperature sensor based on quantum dot film according to claim 8, it is characterised in that The quantum dot film is CdSe/ZnS core-shell quanta dots thin film.
CN201611044320.2A 2016-11-24 2016-11-24 cell temperature sensor based on quantum dot film and preparation method thereof Active CN106525273B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109990915A (en) * 2017-12-29 2019-07-09 Tcl集团股份有限公司 Temperature sensor
CN110376364A (en) * 2019-07-09 2019-10-25 天津大学 A kind of biosensor and preparation method thereof
CN112683417A (en) * 2020-12-28 2021-04-20 西安交通大学 Measuring method for temperature change of organelles

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CN103411703A (en) * 2013-07-18 2013-11-27 西安交通大学 Non-contact-type temperature measurement method based on cadmium telluride quantum dot photoluminescence
CN103439027A (en) * 2013-08-08 2013-12-11 西安交通大学 High-speed bearing temperature measurement method based on quantum dot film photoluminescence
CN104515755A (en) * 2013-09-26 2015-04-15 中国科学院深圳先进技术研究院 Solid quantum dot microarray chip sensor and manufacturing method thereof

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WO2013059343A1 (en) * 2011-10-17 2013-04-25 Massachusetts Institute Of Technology Intracellular delivery
CN103411703A (en) * 2013-07-18 2013-11-27 西安交通大学 Non-contact-type temperature measurement method based on cadmium telluride quantum dot photoluminescence
CN103439027A (en) * 2013-08-08 2013-12-11 西安交通大学 High-speed bearing temperature measurement method based on quantum dot film photoluminescence
CN104515755A (en) * 2013-09-26 2015-04-15 中国科学院深圳先进技术研究院 Solid quantum dot microarray chip sensor and manufacturing method thereof

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109990915A (en) * 2017-12-29 2019-07-09 Tcl集团股份有限公司 Temperature sensor
CN110376364A (en) * 2019-07-09 2019-10-25 天津大学 A kind of biosensor and preparation method thereof
CN112683417A (en) * 2020-12-28 2021-04-20 西安交通大学 Measuring method for temperature change of organelles
CN112683417B (en) * 2020-12-28 2021-10-22 西安交通大学 Measuring method for temperature change of organelles

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