CN109988312A - A kind of poly amic acid ester, preparation method and negative polyimide composition and application - Google Patents

A kind of poly amic acid ester, preparation method and negative polyimide composition and application Download PDF

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CN109988312A
CN109988312A CN201910280080.3A CN201910280080A CN109988312A CN 109988312 A CN109988312 A CN 109988312A CN 201910280080 A CN201910280080 A CN 201910280080A CN 109988312 A CN109988312 A CN 109988312A
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acid
bis
methyl
hydroxy phenyl
group
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CN109988312B (en
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张国平
黄超
李金辉
孙蓉
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Shenzhen Samcien Semiconductor Materials Co ltd
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Shenzhen Institute of Advanced Technology of CAS
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12Unsaturated polyimide precursors
    • C08G73/123Unsaturated polyimide precursors the unsaturated precursors comprising halogen-containing substituents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12Unsaturated polyimide precursors
    • C08G73/126Unsaturated polyimide precursors the unsaturated precursors being wholly aromatic
    • C08G73/127Unsaturated polyimide precursors the unsaturated precursors being wholly aromatic containing oxygen in the form of ether bonds in the main chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/455Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

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  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

The present invention provides a kind of poly amic acid ester, preparation method and negative polyimide composition and application, the structure of the poly amic acid ester is shown in formula I;Poly amic acid ester provided by the present invention, by introducing ester bond or amido bond on the side chain of polymer repeat unit, the solidification temperature and dielectric constant of polyimides, the polyamic acid not being modified compared to side chain can be significantly reduced, in negative polyimide composition, can directly at 200 DEG C and it is following solidified, and dielectric constant can reach 3 hereinafter, even up to 2 or less, shorten process time, power consumption is reduced, is better able to adapt to the requirement of semi-conductor industry, have a extensive future.

Description

A kind of poly amic acid ester, preparation method and negative polyimide composition and application
Technical field
The invention belongs to field of display technology, it is related to a kind of poly amic acid ester, preparation method and negative polyimide group Close object and application.
Background technique
Existing polyimide film, with the interlayer film of formation relative dielectric constant (i.e. 3.5 or 3.5 or more) increasingly Height, the increase of delay time and the increase of power consumption become serious problem, and because many baseplate materials can not bear 300 Degree or more high temperature, and the imidization temperature of most of polyimides is all at 300 degree or more.
CN105612441A discloses a kind of polyimide compositions, is that anisotropy pigmented film is used in alignment films Polyimide compositions, polyimide compositions include polyimides and solvent, the polyimides is by following representation.
4 valence aliphatic alkyls of X 5 or more carbon atom number of expression;R1Indicate the divalent organic group with aromatic rings;N is indicated 1 or more integer, when n is 2 or more, multiple R present in the structure of the above-mentioned expression of 1 molecule1And X, it is respectively identical or not Together.The dissolubility of the polyimides of the specific structure of the invention in a solvent is excellent, without carrying out acyl under high temperature after coating Imidization can only be coated the solvent removal of film at low temperature, can form alignment films on the materials such as colour filter, But it can not be solved the problems, such as in its dielectric properties.
CN103443697A discloses a kind of aligning agent for liquid crystal, which can be reduced the surface of liquid crystal orientation film Fine bumps, liquid crystal aligning improves, and electrical characteristics are also improved, and reliability improves.Containing with following formula (1) table The polyamic acid of the poly amic acid ester of the repetitive unit shown and the repetitive unit indicated with following formula (2), the polyamic acid Divalent organic group (Y possessed by ester1) and the polyamic acid possessed by divalent organic group (Y2) there are 60 moles of % or more to have There is identical structure.
X1And X2It is separately 4 valence organic groups, Y1And Y2It is separately divalent organic group, A1、A2It is only respectively It is on the spot hydrogen atom or alkyl, alkenyl or the alkynyl of the carbon number 1~10 that can have substituent group, R1For methyl.The method without The temperature of method reduction imidization.
CN102893209A discloses a kind of aligning agent for liquid crystal, contains following (A) ingredient and (B) ingredient.(A) ingredient: tool There is the repetitive unit of following formula expression and meets the poly amic acid ester of following conditions
X in formula1It is 4 valence organic groups, Y1It is divalent organic group, R1It is the alkyl of carbon number 1~5, A1And A2Separately For hydrogen atom or alkyl, the alkenyl of the carbon number 1~20 that can have substituent group.The method is merely capable of solving asking for orientation Topic, can not reduce the temperature of imidization.
Therefore, how to develop with lower dielectric constant and can be in 200 DEG C and the polyamides of imidizate accomplished below Imines composition has very important industry meaning.
Summary of the invention
In view of the deficiencies of the prior art, the purpose of the present invention is to provide a kind of poly amic acid esters, preparation method and negative Property polyimide compositions and application, enable composition to form polyimides by 200 DEG C and Low Temperature Heat Treatment below, And dielectric constant reaches 3 effects below.
In order to achieve that object of the invention, the invention adopts the following technical scheme:
In a first aspect, the structure of the poly amic acid ester is shown in formula I the present invention provides a kind of poly amic acid ester:
Wherein, R1For quadrivalent organic radical group, R2For bivalent organic group, R3For C1~C20Alkyl, C3~C20Naphthenic base In the monovalent organic group containing acrylate structural any one or at least two combination and aminopropyl isobutyl group times The combination of half siloxy group;The value of n is 150~300, for example, can be 150,160,170,180,190,200,210,220, 230,240,250,260,270,280,290 or 300 etc..
Poly amic acid ester provided by the invention, by introducing ester bond or amido bond on the side chain of polymer repeat unit, The solidification temperature and dielectric constant that polyimides can be significantly reduced can be straight compared to the polyamic acid that side chain is not modified Connect at 200 DEG C and it is following solidified, and dielectric constant can reach 3 hereinafter, even up to 2 hereinafter, shorten process time, Power consumption is reduced, is better able to adapt to the requirement of semi-conductor industry.
C of the present invention1~C20Alkyl can be C1、C2、C3、C4、C5、C6、C7、C8、C9、C10、C11、C12、C13、C14、 C15、C16、C17、C18、C19、C20Alkyl, more specifically can be methyl, ethyl, isopropyl, tert-butyl, positive decyl, octadecane Base or eicosyl etc..
Preferably, the R1ForIn any one, wherein empty Line indicates the on-position of the group in Formulas I, and X is oxygen atom, sulphur atom, sulfonyl, carbonyl, full aryl polysiloxane, does not take Generation or fluorine-substituted aliphatic group, aryl radical or alkyl in any one, R4And R5Replace independently selected from unsubstituted or fluorine Aliphatic group.
Aliphatic group of the present invention can be C1~C20Aliphatic hydrocarbon, be more specifically methyl, ethyl, dodecyl, Octadecyl or eicosyl etc..
Preferably, the R2ForWherein dotted line indicates the on-position of the group in Formulas I, Y For oxygen atom, sulphur atom, alkyl, sulfonyl, carbonyl, full aryl polysiloxane, unsubstituted or fluorine-substituted aliphatic group, fragrance Any one in alkyl or fragrant two ethers.
Preferably, the R3For the monovalent organic group containing acrylate structural and aminopropyl isobutyl group silsesquioxane The combination of base.
Preferably, the R1ForWherein dotted line indicates the on-position of the group in Formulas I.
Preferably, the R2ForWherein dotted line indicates the on-position of the group in Formulas I.
Preferably, the R3For methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group silsesquioxane-based Combination.Light sensitive characteristic will be lost compared to the aminopropyl isobutyl group silsesquioxane-based poly amic acid ester is used alone, the two is mixed With can guarantee to possess lowest dielectric constant with light sensitivity;Compared to be used alone alkyl, naphthenic base or Monovalent organic group containing acrylate structural is modified, and dielectric properties are more excellent.
In the present invention, in the structure of poly amic acid ester, R3It is preferable to use methacrylic acid -2- hydroxyl n-propyl base and ammonia The combination of propyl isobutyl group silsesquioxane-based, the i.e. carboxylic side-chain of poly amic acid ester had both included and methyl propenoic acid glycidyl The ester bond that ester is formed, and include the amido bond formed with aminopropyl isobutyl group silsesquioxane (aminopropyl isobutyl group POSS) base. Wherein, the structure of aminopropyl isobutyl group POSS is as follows:
By its structure it is found that the structure has cavity, nanoscale cavity can be formed, since the dielectric constant of air is 1, air can be contained in cavity, therefore dielectric constant can be significantly reduced in the case where not influencing the optical property of system.
Preferably, in the structure shown in 1mol Formulas I, methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group The molar ratio of silsesquioxane-based is (5~10): 1;Preferably (7~9): 1.
The meaning of above-mentioned molar ratio is as follows: for example, it is assumed that the number of repetitive unit is 6, i.e., the n value in structure shown in Formulas I It is 6, it is a containing methacrylic acid -2- hydroxyl n-propyl base in the structure of poly amic acid ester at this time if molar ratio is 5:1 Number is 5, and the number of aminopropyl isobutyl group POSS base is 1.
During the preparation process, since the reactivity of amino and carboxyl in aminopropyl isobutyl group POSS is compared to methyl-prop The reactivity of olefin(e) acid ethylene oxidic ester and carboxyl is stronger, therefore, can pass through both the feed ratio of both control, final control Molar ratio in the polymer, so that final system dielectric properties reach best.
In the present invention, it is preferred to control methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group silsesquioxane The molar ratio of base is under aforementioned proportion, especially in (7~9): when in 1 range, can make system under 10 7 power frequencies, be situated between Electric constant reaches 1.9~2.4 even lower, and dielectric properties are excellent.
Second aspect, a kind of preparation method of poly amic acid ester as described in relation to the first aspect provided by the invention, feature It is, the preparation method comprises the following steps: compound a is mixed after the first stage reacts with compound b, is added R3A continues second stage and reacts to obtain poly amic acid ester, and the structure of compound a isThe structure of compound b For H2N-R2NH2, A is-OH or-NH2, wherein R1、R2And R3It is identical as the range limited in first aspect, i.e. R1It is organic for tetravalence Group, R2For bivalent organic group, R3For C1~C20Alkyl, C3~C20Naphthenic base or monovalence containing acrylate structural In organic group any one or at least two combination and aminopropyl isobutyl group silsesquioxane-based combination.
Preferably, compound a, compound b and R3The molar ratio of A is 1:(0.8~1): (2~2.2), such as can be 1: 0.8:2,1:0.9:2.1,1:0.98:2.12 or 1:1:2.2 etc..
Preferably, the temperature of the first stage reaction is 20~40 DEG C, such as can be 20 DEG C, 22 DEG C, 25 DEG C, 26 DEG C, 27 DEG C, 29 DEG C, 30 DEG C, 31 DEG C, 32 DEG C, 35 DEG C, 38 DEG C or 40 DEG C etc..
Preferably, the time of the first stage reaction is 1~5h, such as can be 1h, 2h, 3h, 4h, 5h etc..
Preferably, the second stage reaction carries out in the presence of catalyst and polymerization inhibitor.
Preferably, the catalyst is benzyl dimethylamine.
Preferably, the polymerization inhibitor is hydroquinone and/or quinhydrones.
In the present invention, those skilled in the art can add the catalyst for being suitble to reaction process dosage according to the actual situation With polymerization inhibitor etc..
Preferably, the temperature of the second stage reaction is 30~60 DEG C, such as can be 30 DEG C, 32 DEG C, 35 DEG C, 38 DEG C, 40 DEG C, 42 DEG C, 45 DEG C, 50 DEG C, 52 DEG C, 53 DEG C, 55 DEG C, 57 DEG C, 59 DEG C or 60 DEG C etc..
Preferably, the time of second stage reaction be 10~for 24 hours, such as can be 10h, 11h, 12h, 15h, 16h, 17h, 18h, 19h, 20h, 21h, 22h, 23h or for 24 hours etc..
The third aspect, the present invention provides a kind of negative polyimide composition, the negative polyimide composition is pressed Parts by weight meter includes following components: 20~40 parts of poly amic acid ester described in first aspect, and 10~20 parts of photoinitiator, photo-crosslinking 10~20 parts of agent, 1~5 part of curing accelerator, 35~60 parts of solvent.
Negative polyimide composition provided by the invention passes through the poly amic acid ester of specific structure and curing accelerator It uses, composition can be made to carry out imidizate in 200 DEG C and following temperature while there are 3 dielectric constants below, for Its industrial application has important value.
The parts by weight of poly amic acid ester of the present invention be 20~40 parts, such as can be 20 parts, 22 parts, 25 parts, 26 parts, 27 parts, 29 parts, 30 parts, 31 parts, 32 parts, 35 parts, 36 parts, 37 parts, 38 parts, 39 parts or 40 parts etc..
The parts by weight of photoinitiator of the present invention are 10~20 parts, such as can be 10 parts, 11 parts, 12 parts, 13 parts, 14 Part, 15 parts, 16 parts, 17 parts, 18 parts, 19 parts or 20 parts etc..
Preferably, the photoinitiator includes oxime ester compound, benzophenone, N, N'- tetramethyl -4,4'- diamino two Benzophenone, 2- benzyl-2- dimethylamino-1- (4- morpholinyl phenyl) butanone, 2- methyl-1-[4- (methyl mercapto) phenyl]-2- It is any in quinoline base -1- acetone, alkyl-anthraquinone, benzoin alkylether, benzoin, alkyl benzoin or benzil dimethyl ketal It is a kind of or at least two combination, preferably oxime ester compound and benzophenone.
Alkyl in alkyl-anthraquinone of the present invention can be straight chained alkyl or branch well known to those skilled in the art Alkyl etc..
Oxime ester compound of the present invention is
The parts by weight of photocrosslinking agent of the present invention are 10~20 parts, such as can be 10 parts, 11 parts, 12 parts, 13 parts, 14 Part, 15 parts, 16 parts, 17 parts, 18 parts, 19 parts or 20 parts etc..
Preferably, the photocrosslinking agent include dimethacrylate tetraethylene-glycol ester, diethylene glycol diacrylate, Triethylene glycol diacrylate, tetraethylene glycol diacrylate, dimethacrylate, triethylene glycol dimethyl propylene Olefin(e) acid ester, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane trimethacrylate, three Hydroxymethyl-propane dimethylacrylate, trimethylol-propane trimethacrylate, 1,4 butanediol diacrylate, 1,6- Hexanediyl ester, 1,4- butanediol dimethylacrylate, 1,6-HD dimethylacrylate, pentaerythrite three Acrylate, pentaerythritol tetraacrylate, pentaerythritol acrylate trimethyl, pentaerythritol tetramethylacrylate, benzene Ethylene, divinylbenzene, 4- vinyltoluene, 4-vinylpridine, n-vinyl pyrrolidone, methacrylic acid 2- hydroxyl second Ester, acrylic acid 2- hydroxy methacrylate, 1,3- acryloxy -2- hydroxy propane, 1,3- methacryloxy -2- hydroxy propane, Methylene-bisacrylamide, N, any one in N- dimethylacrylamide, N hydroxymethyl acrylamide or at least two Combination;Preferably dimethacrylate tetraethylene-glycol ester.
The parts by weight of solvent of the present invention be 35~60 parts, such as can be 35 parts, 37 parts, 38 parts, 40 parts, 42 parts, 43 parts, 45 parts, 46 parts, 48 parts, 50 parts, 51 parts, 53 parts, 55 parts, 57 parts, 59 parts or 60 parts etc..
Preferably, the solvent includes n-methyl-2-pyrrolidone, n,N-dimethylacetamide, N, N- dimethyl formyl In amine, dimethyl sulfoxide, tetramethylurea, hexamethylphosphoric triamide or gamma-butyrolacton any one or at least two group It closes.
The parts by weight of curing accelerator of the present invention are 1~5 part, such as can be 1 part, 2 parts, 3 parts, 4 parts or 5 parts Deng.
Preferably, the curing accelerator include substituted or unsubstituted nitrogen-containing heterocycle compound, it is substituted or unsubstituted In the outer aromatic compound containing nitrogen, carbonyl or at least two hydroxyls of amino acids, ring any one or at least Two kinds of combination.
In the present invention, curing accelerator has the effect of promoting to reduce imidizate temperature, composition can be promoted to exist Such as 200 DEG C or less progress imidizates under lower temperature.
Preferably, the pKa value of the nitrogen-containing heterocycle compound in water is 0~8, for example, can be 0,1,2,3,4,5,6, 7 or 8 etc..
Preferably, the nitrogen-containing heterocycle compound includes imidazoles, pyrazoles, triazole, tetrazolium, benzimidazole, naphtho- imidazoles, Yin Azoles, benzotriazole, purine, imidazoline, pyrazoline, pyridine, quinoline, isoquinolin, bipyridyl, two quinolyls, pyridazine, pyrimidine, Pyrazine, 2,3- benzodiazine, quinoxaline, quinazoline, cinnolines, naphthyridines, acridine, phenanthridines, benzene quinoline, benzisoquinoline, benzo quinoline Quinoline, benzo phthalazines, Benzoquinoxalines, Benzoquinazole, phenanthroline, azophenlyene, carboline, pyrimidine, triazine, tetrazine, pteridine, oxazole, Benzoxazoles, isoxazole, benzo isoxazole, thiazole, benzothiazole, isothiazole, benzisothiazole, oxadiazoles, thiadiazoles, pyrroles It is any in alkane diketone, isoindoledione, pyrrolidine-diones, benzene isoquinolin diketone, triethylenediamine or hexa It is a kind of.It is also possible to the N- oxide of these nitrogen-containing heterocycle compounds.
Preferably, the amino acids include glycine, sarcosine, dimethylglycine, glycine betaine, the third ammonia Acid, butyrine, beta-aminobutyric acid, γ-aminobutyric acid, gamma-amino-β-ketobutyric acid, valine, beta-amino isovaleric acid, Gamma-amino isoamyl removes first valine, is beta-amino valeric acid, gamma-amino valeric acid, δ-aminovaleric acid, leucine, isoleucine, just bright Propylhomoserin, serine, Alpha-Methyl serine, isoerine, Alpha-Methyl isoerine, seromycin, homoserine, threonine, neighbour Methylthreonine, isothreonine, adjacent methyl isothreonine, trans- -3- cyclohexane-carboxylic acid, cis- -3- cyclohexanecarboxylic acid, ε - Amine caproic acid, omega-amino dodecanoic acid, beta-hydroxy valine, beta-hydroxy isoleucine, Alpha-hydroxy-beta-amino isovaleric acid, ε-weight Nitrogen-δ-oxo leucine, alpha-amido-ε-hydroxyl amino caproic acid, cysteine, cystine, S- methyl cysteine, S- methyl half Cystine-S- oxide, cysteine, homocysteine, homocystine, methionine, penicillamine, taurine, α, β-diamino Propionic acid, ornithine, lysine, arginine, canaline, canavanine, δ-hydroxylysine, aspartic acid, asparagine, different asparagus fern Amide, glutamic acid, glutamine, isoglutamine, Alpha-Methyl glutamic acid, beta-hydroxyglutamic acid, γ-Hydroxy GIutaminic Acid, α-ammonia Base adipic acid, citrulling, lanthionine, cystathionie, phenylalanine, Alpha-Methyl phenylalanine, o- chlorophenylalanine, m- chlorine Phenylalanine, fenclonine, adjacent fluorophenylalanine, fluorophenylalanine, P-fluoropnenylalanine, β-(2- pyridyl group) third ammonia Acid, tyrosine, thyroxine, dichloro tyrosine, bromotiren, diiodotyrosine, 3,4- dihydroxyphenylalanine, α-first Base -3,4- dihydroxyphenylalanine, phenylglycine, tryptophan, abrine, histidine, 1-Methyl histidine, 2- sulfydryl group Propylhomoserin, proline, hydroxy-proline, ortho-aminobenzoic acid, p-aminobenzoic acid, 2-Thiolhistidine, proline, hydroxyproline Or any one in ortho-aminobenzoic acid.It is also possible to the compound containing secondary amino group or substituted-amino.
Preferably, the aromatic compound includes benzene, anthraquinone, phenanthrenequione, Fluorenone, pyrroles, indoles, iso-indoles, carbazole, furan It mutters, coumarone, isobenzofuran, thiophene, benzothiophene, dibenzothiophenes, benzodioxole, benzdioxan, connection Benzene, acetophenone, propiophenone, butyrophenone, benzophenone, benzoic ether, benzene dicarboxylic acid diester, benzamide, benzonitrile, benzene first Aldehyde, nitrobenzene, benzene sulfonic acid, aniline, diphenylamines, diphenyl methylamine, triphenylamine, triphenylmenthane, triphenylcarbinol, diphenyl methylene ring Hexadiene ketone, 4,4' dihydroxy diphenyl, 1,6- dihydroxy naphthlene, 2,6- dihydroxy naphthlene, bis- (4- hydroxy phenyl) methane, bis- (4- hydroxyls Base phenyl) diphenyl methane, bis- (4- hydroxy phenyl) -1- naphthyl methanes, bis- (4- hydroxy phenyl) ethane of 1,2-, the bis- (4- of 1,1- Hydroxy phenyl) -1- diphenylphosphino ethane, 2- (4- hydroxy phenyl) -2- (3- hydroxy phenyl) propane, bis- (4- hydroxy phenyl) phenyl first Bis- (4- hydroxyl -3- bromophenyl) propane of alkane, 2,2-, bis- (hydroxy phenyl) pentamethylene of 1,1-, bis- (4- hydroxy phenyl) hexamethylenes of 1,1- Bis- (4- hydroxy phenyl) isobutenes of alkane, 1,1-, bis- (4- hydroxy phenyl) cyclododecanes of 1,1-, bis- (the 4- hydroxy benzenes of trans- -2,3- Base) -2- butylene, 2,2- bis- (4- hydroxy phenyl) adamantane, α, bis- (4- hydroxy phenyl) toluene of α ' -, bis- (4- hydroxy phenyl) second Bis- (3- ethyl -4- hydroxy phenyl) propane of nitrile, 2,2-bis(3-methyl-4-hydroxyphenyl) propane, 2,2-, the bis- (3- positive third of 2,2- Base -4- hydroxy phenyl) propane, bis- (3- isopropyl -4- hydroxy phenyl) propane of 2,2-, the bis- (3- sec-butyl -4- hydroxy benzenes of 2,2- Base) propane, bis- (3- tert-butyl-hydroxy phenyl) propane of 2,2-, 2,2- bis- (3- cyclohexyl -4- hydroxy phenyl) propane, 2,2- Bis- (3- allyl -4- hydroxy phenyl) propane;Oreinol diphenol, 5- ethyl resorcinol, 5- propyl diphenol, 5- fourth Base resorcinol, 5- tert-butyl resorcin, 5- phenyl resorcinol, 5- cumyl resorcinol, 2,4,5,6- tetrafluoro isophthalic two Any one in phenol, 2,4,5,6- tetrabromo resorcinol or catechol.
In the present invention, the additive amount of curing accelerator is preferably the 0.2 of every molar equivalent polyamic acid ester repetitive ~4 times.
Preferably, further include 0.2~2 part of tackifier in the negative polyimide composition, for example, can be 0.2 part, 0.3 part, 0.4 part, 0.5 part, 0.6 part, 0.7 part, 0.8 part, 0.9 part, 1 part, 1.1 parts, 1.2 parts, 1.3 parts, 1.4 parts, 1.5 parts, 1.6 parts, 1.7 parts, 1.8 parts, 1.9 parts or 2 parts etc..
Preferably, the tackifier include bis- (2- ethoxy) -3-aminopropyltriethoxysilane, N, bis- (the 2- hydroxyls of N- Ethyl)-N, bis- (trimethoxy-silylpropyl) ethylene diamines of N-, vinyltriethoxysilane, N- (methylol)-N- Dimethylaminopropyl trimethoxy silane, 7- triethoxysilylpropoxy -5- flavonol, N- (3- triethoxy first Ethoxysilylpropyl) -4- hydroxybutyrate amide, 2- hydroxyl -4- (3 methyl diethoxy silicyl propoxyl group) diphenylketone, 1,3- Bis- (4- hydroxyl butyl) tetramethyl disiloxanes, 3- (N- acetyl group -4- hydroxy propyloxy group) propyl-triethoxysilicane or hydroxyl first In ethyl triethoxy silicane alkane any one or at least two combination;Preferably bis- three second of (2- ethoxy) -3- aminopropyl Oxysilane.
Preferably, further include 0.4~3 part of levelling agent in the negative polyimide composition, for example, can be 0.4 part, 0.6 part, 0.8 part, 1 part, 1.2 parts, 1.5 parts, 1.6 parts, 1.8 parts, 1.9 parts, 2 parts, 2.3 parts, 2.5 parts, 2.7 parts, 2.8 parts or 3 Part etc..
In the present invention, those skilled in the art may be selected common levelling agent and be added, it is preferable to use acrylate Substance is controlled between 6000-20000 as levelling agent, number-average molecular weight, and molecular weight distribution is narrow, glass transition temperature Control is at -20 DEG C hereinafter, surface tension 25-26mN/m or less.
Fourth aspect, the negative polyimide composition that the present invention provides a kind of as described in the third aspect is in electronical display Application in device.
Compared with the existing technology, the invention has the following advantages:
Poly amic acid ester provided by the invention, by introducing ester bond or amido bond on the side chain of polymer repeat unit, The solidification temperature and dielectric constant that polyimides can be significantly reduced, compared to the polyamic acid that side chain is not modified, negative In property polyimide compositions, can directly at 200 DEG C and it is following solidified, and dielectric constant can reach 3 hereinafter, even may be used Reach 2 hereinafter, shortening process time, reduction power consumption is better able to adapt to the requirement of semi-conductor industry, have a extensive future.
Detailed description of the invention
Fig. 1 is the infrared spectrogram for the poly amic acid ester that the embodiment of the present invention 1 provides.
Fig. 2 is the GPC result figure for the poly amic acid ester that the embodiment of the present invention 1 provides.
Specific embodiment
The technical scheme of the invention is further explained by means of specific implementation.Those skilled in the art should be bright , the described embodiments are merely helpful in understanding the present invention, should not be regarded as a specific limitation of the invention.
Embodiment 1
The present embodiment provides a kind of poly amic acid esters
Wherein R3For the combination of methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group silsesquioxane-based, than Example is 9:1.
In stirring, 4,4'- diaminodiphenyl ether (0.29mol) is added in pyromellitic dianhydride (0.3mol), 25 DEG C continue stirring 2 hours, a small amount of methacrylic acid -2- hydroxy methacrylate is then added into reaction mixture, is still deposited with combining End position anhydride group.After stirring at 30 °C for 2 hours, the methacrylic acid contracting of 0.54mol is added into reaction mixture Water glyceride and 0.06mol aminopropyl isobutyl group silsesquioxane and suitable benzyl dimethylamine and hydroquinone.Then, will Solution is heated to 60 DEG C of temperature, stirs 23 hours, is then added drop-wise in ethyl alcohol, is vigorously stirred simultaneously.The sediment quilt of formation It extracts out and is dried in a vacuum at room temperature, obtain poly amic acid ester, n value is 178.
The infrared results figure of poly amic acid ester as shown in Figure 1, smoothly connect as shown in Figure 1, in reaction process siloxy in POSS base.
Fig. 2 is the result figure of GPC, as seen from the figure, weight average molecular weight 75367.
Embodiment 2
The present embodiment provides a kind of poly amic acid esters
Wherein R3For the combination of methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group silsesquioxane-based, than Example is 5:1.
In stirring, 4,4'- diaminodiphenyl ether (0.6mol) is added in pyromellitic dianhydride (0.6mol), at 25 DEG C Continue stirring 2 hours, methacrylic acid -2- hydroxy methacrylate is then added into reaction mixture, to combine the end still having Position anhydride group.After being stirred at room temperature 2 hours, into reaction mixture be added 1mol glycidyl methacrylate and 0.2mol aminopropyl isobutyl group silsesquioxane and suitable benzyl dimethylamine and hydroquinone.Then, solution is heated to 60 DEG C of temperature stirs 23 hours, is then added drop-wise in ethyl alcohol, is vigorously stirred simultaneously.The sediment of formation is extracted and in room It is dried in a vacuum under temperature, obtains poly amic acid ester, n value is 120, weight average molecular weight 50788.
Embodiment 3
The present embodiment provides a kind of poly amic acid esters
Wherein R3For the combination of methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group silsesquioxane-based, than Example is 9:1.
In stirring, 4,4'- diaminodiphenyl ether is added into the double phthalic anhydrides (0.3mol) of 4,4'- oxygen (0.29mol) continues stirring 2 hours at 30 DEG C, a small amount of methacrylic acid -2- hydroxyl second is then added into reaction mixture Ester, to combine the end still having position anhydride group.After stirring at 30 °C for 2 hours, 0.54mol is added into reaction mixture Glycidyl methacrylate and 0.06mol aminopropyl isobutyl group silsesquioxane and suitable benzyl dimethylamine and right Benzenediol.Then, solution is heated to 60 DEG C of temperature, is stirred 23 hours, is then added drop-wise in ethyl alcohol, is vigorously stirred simultaneously. The sediment of formation is extracted and is dried in a vacuum at room temperature, obtains poly amic acid ester, and n value is 170, and weight average molecular weight is 71983。
Embodiment 4
The present embodiment provides a kind of poly amic acid esters
Wherein R3For the combination of methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group silsesquioxane-based, than Example is 7:1.
In stirring, to4,4'- diaminodiphenyl ether is added in (0.3mol) (0.29mol) continues stirring 2 hours at 30 DEG C, a small amount of methacrylic acid -2- hydroxyl second is then added into reaction mixture Ester, to combine the end still having position anhydride group.After stirring at 30 °C for 2 hours, it is added into reaction mixture The glycidyl methacrylate and 0.075mol aminopropyl isobutyl group silsesquioxane of 0.525mol and suitable benzyl Dimethylamine and hydroquinone.Then, solution is heated to 60 DEG C of temperature, stirs 23 hours, is then added drop-wise in ethyl alcohol, simultaneously It is vigorously stirred.The sediment of formation is extracted and is dried in a vacuum at room temperature, obtains poly amic acid ester, and n value is 180, weight Average molecular weight is 76217.
Comparative example 1
The difference of this comparative example and embodiment 1 is only that, R3For methacrylic acid -2- hydroxyl n-propyl base, that is, reacted Feed intake all glycidyl methacrylate in journey.
Comparative example 2
The difference of this comparative example and embodiment 1 is only that, R3For aminopropyl isobutyl group silsesquioxane-based, i.e. reaction process In feed intake all aminopropyl isobutyl group silsesquioxanes.
Comparative example 3
The difference of this comparative example and embodiment 1 is only that, R3For hydrogen, i.e., without the esterification of second stage in reaction process Reaction.
Embodiment 7
The present embodiment provides a kind of negative polyimide compositions, by weight include following components:
30 parts of poly amic acid ester of the offer of embodiment 1,16 parts of oxime ester compound, dimethacrylate tetraethylene-glycol ester 15 parts, 2 parts of quinoline, 1 part of -3-aminopropyltriethoxysilane of bis- (2- ethoxys), and 1 part of levelling agent, N- methyl -2- pyrrolidines 40 parts of ketone.
Embodiment 8
The present embodiment provides a kind of negative polyimide compositions, by weight include following components:
35 parts of poly amic acid ester of the offer of embodiment 2,2- methyl-1-[4- (methyl mercapto) phenyl]-2- morpholinyl-1- acetone 20 parts, 20 parts of dimethacrylate, 5 parts of γ-aminobutyric acid, 2 parts of vinyltriethoxysilane, levelling agent 3 Part, 60 parts of dimethyl sulfoxide.
Embodiment 9
The present embodiment provides a kind of negative polyimide compositions, by weight include following components:
40 parts of poly amic acid ester, N of the offer of embodiment 3,10 parts of N'- tetramethyl -4,4'- diaminobenzophenone, three hydroxyls 10 parts of dimethacrylate, 1 part of benzdioxan, 1,3- 0.2 part of tetramethyl disiloxane of bis- (4- hydroxyl butyl), 0.4 part of levelling agent, 40 parts of tetramethylurea.
Embodiment 10
The present embodiment provides a kind of negative polyimide compositions, by weight include following components:
26 parts of poly amic acid ester of the offer of embodiment 4,13 parts of benzophenone, 14 parts of 4-vinylpridine, 3 parts of glutamic acid, 1,3- 0.7 part of tetramethyl disiloxane, 1.2 parts of levelling agent, 35 parts of hexamethylphosphoric triamide of bis- (4- hydroxyl butyl).
Comparative example 4
This comparative example provides a kind of negative polyimide composition, by weight includes following components:
30 parts of poly amic acid ester of the offer of comparative example 2,16 parts of oxime ester compound, dimethacrylate tetraethylene-glycol ester 15 parts, 2 parts of quinoline, 1 part of -3-aminopropyltriethoxysilane of bis- (2- ethoxys), and 1 part of levelling agent, N- methyl -2- pyrrolidines 40 parts of ketone.
Comparative example 5
This comparative example provides a kind of negative polyimide composition, by weight includes following components:
30 parts of poly amic acid ester of the offer of comparative example 3,16 parts of oxime ester compound, dimethacrylate tetraethylene-glycol ester 15 parts, 2 parts of quinoline, 1 part of -3-aminopropyltriethoxysilane of bis- (2- ethoxys), and 1 part of levelling agent, N- methyl -2- pyrrolidines 40 parts of ketone.
Comparative example 6
This comparative example provides a kind of negative polyimide composition, by weight includes following components:
30 parts of poly amic acid ester of the offer of comparative example 4,16 parts of oxime ester compound, dimethacrylate tetraethylene-glycol ester 15 parts, 2 parts of quinoline, 1 part of -3-aminopropyltriethoxysilane of bis- (2- ethoxys), and 1 part of levelling agent, N- methyl -2- pyrrolidines 40 parts of ketone.
The negative polyimide composition that above-described embodiment 7-10 and comparative example 4-6 are provided carries out the solidification of imidizate Temperature test (passing through infrared test) and dielectric constant (impedance instrument) test, the concrete outcome of test are as shown in table 1 below:
Table 1
Sample Amination rate (%) Dielectric constant
Embodiment 7 98.6 2.2
Embodiment 8 98.4 2.4
Embodiment 9 98.3 2.1
Embodiment 10 98.1 2.3
Comparative example 4 98.7 3.3
Comparative example 5 99.1 1.9
Comparative example 6 98.2 3.7
As shown in Table 1, if R3Appropriateness is carried out without using aminopropyl isobutyl group silsesquioxane in group to be modified, Then the dielectric properties of negative polyimide composition are poor, and dielectric constant can be 3 or more;And work as R3It is different using aminopropyl in group After butyl silsesquioxane is modified, dielectric properties are greatly promoted, and dielectric constant generally can reach 2 or so.
In addition, the dosage of aminopropyl isobutyl group silsesquioxane will guarantee that appropriateness is modified, by infrared spectrum analysis It is found with morphology characterization, as the content of POSS increases, will lead to viscosity and steeply rise, side group increases wrapped around one another, leads to sky Hole becomes larger, and hydroscopicity rises, dielectric properties decline;Therefore its dosage general control be and other esterifying reagents ratio be 1:(7~ 9) when, dielectric properties be can reach most preferably.
The Applicant declares that the present invention is explained by the above embodiments poly amic acid ester of the invention, preparation method and Negative polyimide composition and application, but the invention is not limited to above-mentioned processing steps, that is, do not mean that the present invention is necessary Relying on above-mentioned processing step could implement.It should be clear to those skilled in the art, any improvement in the present invention, right The equivalence replacement of raw material selected by the present invention and addition, the selection of concrete mode of auxiliary element etc., all fall within guarantor of the invention It protects within range and the open scope.

Claims (10)

1. a kind of poly amic acid ester, which is characterized in that the structure of the poly amic acid ester is shown in formula I:
Wherein, R1For quadrivalent organic radical group, R2For bivalent organic group, R3For C1~C20Alkyl, C3~C20Naphthenic base or contain Have in the monovalent organic group of acrylate structural any one or at least two combination and aminopropyl isobutyl group sesquialter silicon The combination of oxyalkyl;The value of n is 150~300.
2. poly amic acid ester according to claim 1, which is characterized in that the R1For In any one, wherein dotted line indicate in formula The on-position of group in I, X are oxygen atom, sulphur atom, sulfonyl, carbonyl, full aryl polysiloxane, the substitution of unsubstituted or fluorine Aliphatic group, any one in aryl radical or alkyl, R4And R5Independently selected from unsubstituted or fluorine-substituted aliphatic hydrocarbon Base;
Preferably, the R2ForWherein dotted line indicates the on-position of the group in Formulas I, and Y is oxygen Atom, sulphur atom, alkyl, sulfonyl, carbonyl, full aryl polysiloxane, unsubstituted or fluorine-substituted aliphatic group, aryl radical Or any one in fragrant two ethers;
Preferably, the R3For the monovalent organic group containing acrylate structural and aminopropyl isobutyl group silsesquioxane-based Combination.
3. poly amic acid ester according to claim 1 or 2, which is characterized in that the R1ForWherein dotted line table Show the on-position of the group in Formulas I;
Preferably, the R2ForWherein dotted line indicates the on-position of the group in Formulas I;
Preferably, the R3For the combination of methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group silsesquioxane-based;
Preferably, in the structure shown in 1mol Formulas I, methacrylic acid -2- hydroxyl n-propyl base and aminopropyl isobutyl group sesquialter The molar ratio of siloxy group is (5~10): 1;Preferably (7~9): 1.
4. the preparation method of poly amic acid ester according to any one of claim 1-3, which is characterized in that the preparation side Method is the following steps are included: compound a is mixed after the first stage reacts with compound b, addition R3A continues second-order Duan Fanying obtains poly amic acid ester, and the structure of compound a isThe structure of compound b is H2N-R2-NH2, A is-OH Or-NH2, wherein R1、R2And R3It is identical as the range limited in claim 1.
5. the preparation method according to claim 4, which is characterized in that compound a, compound b and R3The molar ratio of A is 1: (0.8~1): (2~2.2);
Preferably, the temperature of the first stage reaction is 20~40 DEG C;
Preferably, the time of the first stage reaction is 1~5h;
Preferably, the second stage reaction carries out in the presence of catalyst and polymerization inhibitor;
Preferably, the catalyst is benzyl dimethylamine;
Preferably, the polymerization inhibitor is hydroquinone and/or quinhydrones;
Preferably, the temperature of the second stage reaction is 30~60 DEG C;
Preferably, the time of second stage reaction be 10~for 24 hours.
6. a kind of negative polyimide composition, which is characterized in that the negative polyimide composition includes by weight Following components: 20~40 parts of poly amic acid ester of any of claims 1-3,10~20 parts of photoinitiator, photo-crosslinking 10~20 parts of agent, 1~5 part of curing accelerator, 35~60 parts of solvent.
7. negative polyimide composition according to claim 6, which is characterized in that the photoinitiator includes oxime esterification Close object, benzophenone, N, N'- tetramethyl -4,4'- diaminobenzophenone, 2- benzyl -2- dimethylamino -1- (4- morpholine benzene Base) butanone, 2- methyl-1-[4- (methyl mercapto) phenyl]-2- morpholinyl-1- acetone, alkyl-anthraquinone, benzoin alkylether, benzene idol In relation by marriage, alkyl benzoin or benzil dimethyl ketal any one or at least two combination, preferably oxime ester compound And benzophenone;
Preferably, the photocrosslinking agent includes dimethacrylate tetraethylene-glycol ester, diethylene glycol diacrylate, three second Omega-diol diacrylate, tetraethylene glycol diacrylate, dimethacrylate, triethylene glycol dimethacrylate Ester, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane trimethacrylate, three hydroxyl first Base propane dimethylacrylate, trimethylol-propane trimethacrylate, 1,4 butanediol diacrylate, 1,6- oneself two Alcohol diacrylate, 1,4- butanediol dimethylacrylate, 1,6-HD dimethylacrylate, three propylene of pentaerythrite Acid esters, pentaerythritol tetraacrylate, pentaerythritol acrylate trimethyl, pentaerythritol tetramethylacrylate, styrene, Divinylbenzene, 4- vinyltoluene, 4-vinylpridine, n-vinyl pyrrolidone, 2-hydroxyethyl methacrylate, third Olefin(e) acid 2- hydroxy methacrylate, 1,3- acryloxy -2- hydroxy propane, 1,3- methacryloxy -2- hydroxy propane, methylene Bisacrylamide, N, in N- dimethylacrylamide, N hydroxymethyl acrylamide any one or at least two combination;It is excellent It is selected as dimethacrylate tetraethylene-glycol ester;
Preferably, the solvent includes n-methyl-2-pyrrolidone, n,N-dimethylacetamide, n,N-Dimethylformamide, two In methyl sulfoxide, tetramethylurea, hexamethylphosphoric triamide or gamma-butyrolacton any one or at least two combination.
8. negative polyimide composition according to claim 6 or 7, which is characterized in that the curing accelerator includes Contain nitrogen, carbonyl or extremely outside substituted or unsubstituted nitrogen-containing heterocycle compound, substituted or unsubstituted amino acids, ring In the aromatic compound of few two hydroxyls any one or at least two combination;
Preferably, the pKa value of the nitrogen-containing heterocycle compound in water is 0~8;
Preferably, the nitrogen-containing heterocycle compound include imidazoles, pyrazoles, triazole, tetrazolium, benzimidazole, naphtho- imidazoles, indazole, Benzotriazole, purine, imidazoline, pyrazoline, pyridine, quinoline, isoquinolin, bipyridyl, two quinolyls, pyridazine, pyrimidine, pyrrole Piperazine, 2,3- benzodiazine, quinoxaline, quinazoline, cinnolines, naphthyridines, acridine, phenanthridines, benzene quinoline, benzisoquinoline, benzoquinoline, Benzo phthalazines, Benzoquinoxalines, Benzoquinazole, phenanthroline, azophenlyene, carboline, pyrimidine, triazine, tetrazine, pteridine, oxazole, benzo Oxazole, isoxazole, benzo isoxazole, thiazole, benzothiazole, isothiazole, benzisothiazole, oxadiazoles, thiadiazoles, pyrrolidines two Any one in ketone, isoindoledione, pyrrolidine-diones, benzene isoquinolin diketone, triethylenediamine or hexa;
Preferably, the amino acids include glycine, sarcosine, dimethylglycine, glycine betaine, alanine, α- Aminobutyric acid, beta-aminobutyric acid, γ-aminobutyric acid, gamma-amino-β-ketobutyric acid, valine, beta-amino isovaleric acid, γ-ammonia Base isoamyl, go first valine, beta-amino valeric acid, gamma-amino valeric acid, δ-aminovaleric acid, leucine, isoleucine, nor-leucine, Serine, Alpha-Methyl serine, isoerine, Alpha-Methyl isoerine, seromycin, homoserine, threonine, adjacent methyl Soviet Union Propylhomoserin, isothreonine, adjacent methyl isothreonine, trans- -3- cyclohexane-carboxylic acid, cis- -3- cyclohexanecarboxylic acid, ε-amine oneself Acid, omega-amino dodecanoic acid, beta-hydroxy valine, beta-hydroxy isoleucine, Alpha-hydroxy-beta-amino isovaleric acid, ε-diazonium-δ- Oxo leucine, alpha-amido-ε-hydroxyl amino caproic acid, cysteine, cystine, S- methyl cysteine, half Guang ammonia of S- methyl Acid-S- oxide, cysteine, homocysteine, homocystine, methionine, penicillamine, taurine, α, β-diaminopropionic acid, Ornithine, lysine, arginine, canaline, canavanine, δ-hydroxylysine, aspartic acid, asparagine, isoasparagine, Glutamic acid, glutamine, isoglutamine, Alpha-Methyl glutamic acid, beta-hydroxyglutamic acid, γ-Hydroxy GIutaminic Acid, alpha-amido oneself two Acid, citrulling, lanthionine, cystathionie, phenylalanine, Alpha-Methyl phenylalanine, o- chlorophenylalanine, the third ammonia of m- chlorobenzene Acid, fenclonine, adjacent fluorophenylalanine, fluorophenylalanine, P-fluoropnenylalanine, β-(2- pyridyl group) alanine, junket Propylhomoserin, thyroxine, dichloro tyrosine, bromotiren, diiodotyrosine, 3,4- dihydroxyphenylalanine, Alpha-Methyl -3,4- Dihydroxyphenylalanine, phenylglycine, tryptophan, abrine, histidine, 1-Methyl histidine, 2-Thiolhistidine, dried meat Propylhomoserin, hydroxy-proline, ortho-aminobenzoic acid, p-aminobenzoic acid, 2-Thiolhistidine, proline, hydroxyproline or adjacent ammonia Any one in yl benzoic acid;
Preferably, the aromatic compound include benzene, anthraquinone, phenanthrenequione, Fluorenone, pyrroles, indoles, iso-indoles, carbazole, furans, Coumarone, isobenzofuran, thiophene, benzothiophene, dibenzothiophenes, benzodioxole, benzdioxan, biphenyl, Acetophenone, propiophenone, butyrophenone, benzophenone, benzoic ether, benzene dicarboxylic acid diester, benzamide, benzonitrile, benzaldehyde, nitre Base benzene, benzene sulfonic acid, aniline, diphenylamines, diphenyl methylamine, triphenylamine, triphenylmenthane, triphenylcarbinol, diphenyl methylene hexamethylene two Ketenes, 4,4' dihydroxy diphenyl, 1,6- dihydroxy naphthlene, 2,6- dihydroxy naphthlene, bis- (4- hydroxy phenyl) methane, bis- (4- hydroxy benzenes Base) diphenyl methane, bis- (4- hydroxy phenyl) -1- naphthyl methanes, bis- (4- hydroxy phenyl) ethane of 1,2-, bis- (the 4- hydroxyls of 1,1- Phenyl) -1- diphenylphosphino ethane, 2- (4- hydroxy phenyl) -2- (3- hydroxy phenyl) propane, bis- (4- hydroxy phenyl) phenylmethanes, 2, Bis- (4- hydroxyl -3- bromophenyl) propane of 2-, bis- (hydroxy phenyl) pentamethylene of 1,1-, 1,1-bis(4-hydroxyphenyl)-cyclohexane, 1, Bis- (4- hydroxy phenyl) isobutenes of 1-, bis- (4- hydroxy phenyl) cyclododecanes of 1,1-, bis- (4- the hydroxy phenyl) -2- of trans- -2,3- Butylene, 2,2- bis- (4- hydroxy phenyl) adamantane, α, bis- (4- hydroxy phenyl) toluene of α '-, bis- (4- hydroxy phenyl) acetonitriles, 2,2- Bis- (3- ethyl -4- hydroxy phenyl) propane of bis- (3- methyl -4- hydroxy phenyl) propane, 2,2-, the bis- (3- n-propyl -4- hydroxyls of 2,2- Base phenyl) propane, bis- (3- isopropyl -4- hydroxy phenyl) propane of 2,2-, bis- (3- sec-butyl -4- hydroxy phenyl) propane of 2,2-, Bis- (3- cyclohexyl -4- hydroxy phenyl) propane of bis- (3- tert-butyl-hydroxy phenyl) propane of 2,2-, 2,2-, bis- (the 3- allyls of 2,2- Base -4- hydroxy phenyl) propane;Oreinol diphenol, 5- ethyl resorcinol, 5- propyl diphenol, 5- butyl isophthalic two Phenol, 5- tert-butyl resorcin, 5- phenyl resorcinol, 5- cumyl resorcinol, 2,4,5,6- tetrafluoro resorcinol, 2,4,5, Any one in 6- tetrabromo resorcinol or catechol.
9. negative polyimide composition a method according to any one of claims 6-8, which is characterized in that the negativity polyamides It further include 0.2~2 part of tackifier in imines composition;
Preferably, the tackifier include bis- (2- ethoxy) -3-aminopropyltriethoxysilane, N, bis- (the 2- hydroxyl second of N- Base)-N, bis- (trimethoxy-silylpropyl) ethylene diamines of N-, vinyltriethoxysilane, N- (methylol)-N- first Base TSL 8330,7- triethoxysilylpropoxy -5- flavonol, N- (3- triethoxy first silicon Alkyl propyl) -4- hydroxybutyrate amide, 2- hydroxyl -4- (3 methyl diethoxy silicyl propoxyl group) diphenylketone, 1,3- be bis- (4- hydroxyl butyl) tetramethyl disiloxane, 3- (N- acetyl group -4- hydroxy propyloxy group) propyl-triethoxysilicane or hydroxymethyl In triethoxysilane any one or at least two combination;Preferably bis- three ethoxies of (2- ethoxy) -3- aminopropyl Base silane;
It preferably, further include 0.4~3 part of levelling agent in the negative polyimide composition.
10. application of the negative polyimide composition in electron display device according to any one of claim 6-9.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111393379A (en) * 2020-04-22 2020-07-10 深圳先进电子材料国际创新研究院 Diamine compound and photosensitive resin
CN114249892A (en) * 2020-09-24 2022-03-29 中国科学院深圳先进技术研究院 Polyimide precursor resin and preparation method and application thereof
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CN115181268A (en) * 2022-06-29 2022-10-14 深圳职业技术学院 Photosensitive polyimide, process for producing the same, and photosensitive polyimide composition
WO2023202454A1 (en) * 2022-04-19 2023-10-26 上海交通大学 Polymer for black matrix, and preparation method therefor and use thereof
JP7455375B2 (en) 2020-05-22 2024-03-26 株式会社トクヤマデンタル Radical polymerization inhibitor composition and dental adhesive composition containing the radical polymerization inhibitor composition

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004341165A (en) * 2003-05-15 2004-12-02 Chisso Corp Varnish for forming liquid crystal alignment layer, and liquid crystal display element
CN101003768A (en) * 2005-12-28 2007-07-25 高爽工业公司 Foamable alcoholic composition
CN102449031A (en) * 2009-04-02 2012-05-09 日产化学工业株式会社 Polyimide precursor composition containing polyamic alkyl ester
US9006371B1 (en) * 2010-09-28 2015-04-14 United States Of America As Represented By The Secretary Of The Navy Synthesis of oligomeric silsesquioxane monomers for high performance polymers
CN105837819A (en) * 2016-05-25 2016-08-10 常州大学 Hybrid polyimide containing trifluoromethyl and oligomeric silsesquioxane structures at same time and preparation method thereof
US20160237311A1 (en) * 2013-09-26 2016-08-18 Farhad G. Mizori Low dielectric constant, low dielectric dissipation factor coatings, films and adhesives
CN107922733A (en) * 2015-08-07 2018-04-17 东京应化工业株式会社 Polyimide precursor composition

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004341165A (en) * 2003-05-15 2004-12-02 Chisso Corp Varnish for forming liquid crystal alignment layer, and liquid crystal display element
CN101003768A (en) * 2005-12-28 2007-07-25 高爽工业公司 Foamable alcoholic composition
CN102449031A (en) * 2009-04-02 2012-05-09 日产化学工业株式会社 Polyimide precursor composition containing polyamic alkyl ester
US9006371B1 (en) * 2010-09-28 2015-04-14 United States Of America As Represented By The Secretary Of The Navy Synthesis of oligomeric silsesquioxane monomers for high performance polymers
US20160237311A1 (en) * 2013-09-26 2016-08-18 Farhad G. Mizori Low dielectric constant, low dielectric dissipation factor coatings, films and adhesives
CN107922733A (en) * 2015-08-07 2018-04-17 东京应化工业株式会社 Polyimide precursor composition
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