CN109981080A - Power amplifier overshoot inhibits improved efficiency method, circuit and power amplifier under same trigger signal - Google Patents
Power amplifier overshoot inhibits improved efficiency method, circuit and power amplifier under same trigger signal Download PDFInfo
- Publication number
- CN109981080A CN109981080A CN201910243505.3A CN201910243505A CN109981080A CN 109981080 A CN109981080 A CN 109981080A CN 201910243505 A CN201910243505 A CN 201910243505A CN 109981080 A CN109981080 A CN 109981080A
- Authority
- CN
- China
- Prior art keywords
- power amplifier
- bias voltage
- pulse
- pulse power
- control circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
The invention belongs to solid state microwave power amplifier regions, specifically provide power amplifier overshoot under a kind of same trigger signal and inhibit improved efficiency method, circuit and power amplifier, it is intended to solve the problems, such as that power amplifier stability is low or low efficiency.Pulse power amplifier of the present invention works in microwave excitation signal previous section in efficient B class, utilize the failing edge of failing edge detection circuit detection power amplifier drive signal, gate bias voltage is adjusted by grid voltage control circuit before the failing edge of pumping signal reaches, change power amplifier operation class (of an amplifying stage), gate bias voltage is adjusted to A class, to make power amplifier work in pumping signal failing edge moment in A class, microwave excitation signal-off moment drain voltage is made not generate overshoot.The high stability of A class pulse power amplifier and the high efficiency of B class pulse power amplifier can be obtained simultaneously.
Description
Technical field
The invention belongs to solid state microwave power amplifier regions, and in particular to pulse power is put under a kind of same trigger signal
Big device overshoot inhibition and improved efficiency method and circuit.
Background technique
Microwave power amplifier is the important component of microwave system, needed for faint microwave signal being amplified to
Power level, the end of transmitter is typically in, in wireless communication, radar, remote sensing, medical electronics, observing and controlling, electronic countermeasure etc.
Field is widely used.As increasingly maturation, the output power of power amplifier of third generation semiconductor material GaN technique are also shown
It writes and increases, single tube output power has broken through 1kW at present.Such as the paper A kW- that E.Mitani et al. was delivered in 2007
Class AlGaN/GaN HEMT Pallet Amplifier for S-band High Power Application (is published
In Proceedings of the 2nd European Microwave Integrated Circuits Conference),
The paper Kilowatt-level power amplifier in a single- that L.Haapala et al. was delivered in 2016
Ended architecture at 352MHz (being published in ELECTRONICS LETTERS, Vol.52, No.18,2016).
The microwave system of pulse regime is using very extensive, pulse radar, transmitting-receiving timesharing electronic warfare system and sudden
Sending out communication system is all pulse regime, and this requires power amplification circuit work in pulse mode.It is constituted with field effect transistor
Power amplifier for, impulse modulation have using gate bias voltage modulation and drain bias voltage modulate two kinds.J.Dhar
Et al. in article Performance enhancement of Pulsed Solid State Power in 2009
Amplifier using Drain Modulation over Gate Modulation and Hyo-Jong Kim et al. is 2017
The article An X-Band 100W GaN HEMT Power Amplifier Using a Hybrid Switching in year
Method for Fast Pulse Switching (is published in Progress In Electromagnetics Research
B, Vol.78) in point out, can be obtained using drain bias voltage modulation and modulate higher efficiency, bigger than gate bias voltage
Output power, higher gain, faster rising edge, faster failing edge and more flat gain, therefore it is inclined using drain electrode
Better performance can be obtained by setting voltage modulated.
By the way of drain biased modulation, in microwave excitation pulse, drain electrode supply current is power amplifier dynamic
Electric current Id, outside microwave excitation pulse, drain electrode supply current is power amplifier quiescent electric current Iq, in microwave excitation signal-off
Moment can generate drain voltage overshoot V shown in FIG. 1 since drain electrode supply path has parasitic inductance Ls:
In formula, tfFor the pumping signal failing edge time.
In microwave transmitter, power amplifier is main energy dissipating portion and the region that heat production is most concentrated, and power is put
The height of big circuit efficiency all has a major impact the design of power supply system, the design of cooling system and system cruise duration,
The efficiency for promoting pulse power amplifier circuit becomes an important content for improving circuit performance.James Custer et al. exists
Article Recent Advances in kW-level Pulsed GaN Transistors with Very High in 2016
Efficiency points out that the classifications such as E class efficient for kW stage power amplifier, F class cannot achieve, and can only be changed using tradition
The operation class (of an amplifying stage) of the angle of flow improves efficiency.Steve C.Cripps is in monograph RF Power Amplifiers for
The efficiency and output power of different angle of flow pulse power amplifiers are calculated in Wireless Communication Cripps
Relationship is shown in Fig. 2.
For the operation class (of an amplifying stage) of different angle of flow α, dynamic DC current Id are as follows:
Quiescent current IqAre as follows:
Thus the calculated opposite voltage overshoot V that drainssSee Fig. 3.
In kW class large power amplifier, if using the angle of flow for 360 ° of A class, Id=Iq, voltage overshoot VsIt is 0,
Damage will not be generated to pulse power amplifier, stability is high, but efficiency only has 50%；If using the angle of flow for 180 °
B class, efficiency are up to 78.5%, but Iq=0, thus Id>>Iq, tens of volts even the voltage overshoot V of hundreds of volts can be generateds, very
Possible breakdown power amplifier causes to damage, very harmful.
Summary of the invention
The of the invention technical problem of being solved is: providing under a kind of same trigger signal, mixing class high power solid state pulse
Power amplifier voltage overshoot inhibits and improved efficiency method, it is intended to solve that power amplifier stability is low or low efficiency is asked
Topic, can obtain the high stability of A class pulse power amplifier and the high efficiency of B class pulse power amplifier simultaneously.
To achieve the goals above, the technical scheme is that
The inhibition of power amplifier voltage overshoot and improved efficiency method under same trigger signal, comprising the following steps:
1] before the t0 moment:
Pulse signal generator does not generate pulse triggering signal, and control-grid voltage control circuit is provided to pulse power amplifier
B class operating bias voltage Vgb；Pulse power amplifier does not work；
2] the t0 moment:
Pulse signal generator provides pulse triggering signal；
It is sent into the trigger signal rising edge of radio-frequency signal source, is delayed through delay circuit；
Trigger signal triggering leakage pressure control circuit drains to pulse power amplifier provides drain bias voltage；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
3] the t0 moment is between the t1 moment:
Pulse power amplifier drain bias voltage gradually rises to required drain bias voltage from 0V；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
4] the t1 moment:
Pulse power amplifier drain bias voltage has stabilized to required drain bias voltage；
Trigger signal rising edge by delay reaches radio-frequency signal source, and radio-frequency signal source starts to generate pumping signal；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
5] the t1 moment is between the tc moment:
Pulse power amplifier works in B class；
6] the tc moment:
The pulse triggering signal that pulse signal generator generates reaches failing edge；
It is sent into the trigger signal failing edge of radio-frequency signal source, is delayed through delay circuit；
It is sent into the trigger signal failing edge of failing edge detection circuit, generates trigger signal, touching through failing edge detection circuit
Hair grid voltage control circuit starts to adjust gate bias voltage；
7] the tc moment is between the t2 moment:
Pulse power amplifier working condition gradually becomes A class by B class, is now in AB class working condition；
8] the t2 moment:
Stablize time τ by changing grid voltagegAfterwards, gate bias voltage variation is A class operating bias voltage Vga；
Wherein:
In formula, VtGate bias voltage when dropping in safe range for drain voltage overshoot；R is grid voltage control circuit
To the dead resistance of pulse power amplifier grid, C is the parasitic capacitance of grid voltage control circuit over the ground；
Be delayed τgThe trigger signal failing edge of duration reaches radio-frequency signal source, and radio-frequency signal source stops generating pumping signal；
Be delayed τgThe trigger signal failing edge of duration reaches leakage pressure control circuit, and leakage pressure control circuit stops to pulse power
Amplifier drain electrode provides drain bias voltage；
Pulse power amplifier stops working；
9] the t2 moment is between the t3 moment:
Pulse power amplifier works in A class；
The drain bias voltage of pulse power amplifier is gradually dropped to 0V；
10] the t3 moment:
The drain bias voltage of pulse power amplifier drops to 0V；
Grid voltage control circuit restores to provide B class operating bias voltage V to pulse power amplifiergb。
Pulse power amplifier of the present invention works in microwave excitation signal previous section in efficient B class, utilizes decline
Along the failing edge of detection circuit detection power amplifier drive signal, controlled before the failing edge of pumping signal reaches by grid voltage
The regulation of electrical circuit gate bias voltage changes power amplifier operation class (of an amplifying stage), gate bias voltage is adjusted to A class, to make function
Rate amplifier works in pumping signal failing edge moment in A class, generates microwave excitation signal-off moment drain voltage not
Punching.
Further, step 8] in, VgaVoltage hold-time τgaStablize time τ to change grid voltagegWith drain bias voltage
Failing edge time τdfThe sum of.
The present invention also provides a kind of circuit for realizing the above method, be characterized in that including pulse signal generator,
Radio-frequency signal source and control circuit；
Above-mentioned control circuit includes rising edge detection circuit, failing edge detection circuit, the first delay circuit, the second delay electricity
Road, leakage pressure control circuit and grid voltage control circuit；
The input terminal of above-mentioned rising edge detection circuit and failing edge detection circuit respectively with the output of pulse signal generator
End connection；The output end of rising edge detection circuit is connect with the input terminal of leakage pressure control circuit and the second delay circuit input terminal；
The input terminal of the output end of failing edge detection circuit and grid voltage control circuit, the input terminal of the first delay circuit and the second delay electricity
The connection of road input terminal；The output end of first delay circuit is connect with voltage-controlled circuit input end processed is leaked；The output of second delay circuit
End is connect with radio-frequency signal source input terminal；The output end of radio-frequency signal source and the signal input part of pulse power amplifier connect；
Grid voltage control circuit and the output end of leakage pressure control circuit are connected with pulse power amplifier grid and drain electrode respectively；
Above-mentioned rising edge detection circuit issues pulse signal rising edge for detecting pulse signal generator, and believes in pulse
When number rising edge reaches, trigger signal is exported to leakage pressure control circuit and the second delay circuit；Above-mentioned failing edge detection circuit is used
Pulse signal failing edge is issued in detection pulse signal generator, and when pulse signal failing edge reaches, controls electricity to grid voltage
Road, the first delay circuit and the second delay circuit export trigger signal；The grid voltage control circuit and leakage pressure control circuit according to
The operation class (of an amplifying stage) of pulse signal control pulse power amplifier.
Further, the delay time of above-mentioned first delay circuit is τg；Above-mentioned second delay circuit is on pulse signal
Rise edge delay time be pulse power amplifier drain bias voltage from 0V change to required drain bias voltage it is needed when
Between τdr；Above-mentioned second delay circuit is τ to the delay time of pulse signal failing edgeg。
The present invention also provides a kind of mixing class power amplifier, including pulse power amplifier, be characterized in that and further include on
The circuit stated, the output end of radio-frequency signal source and the signal input part of pulse power amplifier connect；Grid voltage control circuit and leakage
The output end of control circuit is pressed to connect respectively with pulse power amplifier grid and drain electrode.
Further, above-mentioned pulse power amplifier is the power amplifier or bipolar transistor that field effect transistor is constituted
The power amplifier that pipe is constituted.
The beneficial effects of the present invention are:
(1) method and circuit proposed through the invention can inhibit highpowerpulse power amplifier voltage to overshoot, keep away
Exempt from pulse power amplifier breakdown, promotes pulse power amplifier stability.
(2) method and circuit proposed through the invention allows mixing class pulse power amplifier to obtain theory
78.5% high efficiency can theoretically obtain the effect of maximum 28.5% than the A class pulse power amplifier currently generallyd use
Rate is promoted.
(3) mixing class pulse power amplifier proposed by the present invention is when bias voltage switches, due to A class, B class output work
Rate is almost the same, and the flat of output microwave waveform can be kept while raising efficiency, improving stability.
Detailed description of the invention
The features and advantages of the present invention can be more clearly understood by reference to attached drawing, attached drawing be schematically without
It is construed as there are any restrictions to the present invention, in the accompanying drawings:
Fig. 1 is pulse power amplifier microwave excitation signal and drain bias voltage waveform diagram；
Fig. 2 is the relationship of conventional power amplifier output power, efficiency and the angle of flow；
Fig. 3 is the relationship of conventional power amplifier drain electrode opposite voltage overshoot and the angle of flow；
Fig. 4 is that embodiment mixes class and tradition A class, B class pulse power amplifier electrical characteristics schematic diagram；
Fig. 5 is that embodiment mixes class pulse power amplifier circuit system schematic diagram；
Fig. 6 is pulse power amplifier grid charge and discharge equivalent circuit diagram.
Specific embodiment
The present invention provides one kind under same trigger signal, mixes class high power solid state pulse power amplifier voltage mistake
Punching inhibits and improved efficiency method, highpowerpulse power amplifier voltage can be inhibited to overshoot, while obtaining high efficiency.
Embodiment one
Pulse power amplifier of the present invention works in microwave excitation signal previous section in efficient B class, believes in excitation
Number failing edge reach before by grid voltage control circuit adjust gate bias voltage, change power amplifier operation class (of an amplifying stage), by grid
Pole bias voltage is adjusted to A class, so that power amplifier be made to work in pumping signal failing edge moment in A class, makes microwave excitation
Signal-off moment drain voltage does not generate overshoot.
As shown in figure 4, specifically includes the following steps:
1] before the t0 moment:
Pulse signal generator does not generate pulse triggering signal, and grid voltage control circuit provides B class to pulse power amplifier
Operating bias voltage Vgb；Pulse power amplifier does not work；
2] the t0 moment:
Pulse signal generator provides pulse triggering signal；
It is sent into the trigger signal rising edge of radio-frequency signal source, is delayed through delay circuit；
Trigger signal triggering leakage pressure control circuit drains to pulse power amplifier provides drain bias voltage；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
3] the t0 moment is between the t1 moment:
Pulse power amplifier drain bias voltage gradually rises to required drain bias voltage from 0V；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
4] the t1 moment:
Pulse power amplifier drain bias voltage has stabilized to required drain bias voltage；
Trigger signal rising edge by delay reaches radio-frequency signal source, and radio-frequency signal source starts to generate pumping signal；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
5] the t1 moment is between the tc moment:
Pulse power amplifier works in B class；
6] the tc moment:
The pulse triggering signal that pulse signal generator generates reaches failing edge；
It is sent into the trigger signal failing edge of radio-frequency signal source, is delayed through delay circuit；
It is sent into the trigger signal failing edge of failing edge detection circuit, generates trigger signal, touching through failing edge detection circuit
Hair grid voltage control circuit starts to adjust gate bias voltage；
7] the tc moment is between the t2 moment:
Pulse power amplifier working condition gradually becomes A class by B class, is now in AB class working condition；
8] the t2 moment:
Stablize time τ by changing grid voltagegAfterwards, gate bias voltage variation is A class operating bias voltage Vga；
Wherein:
In formula, VtGate bias voltage when dropping in safe range for drain voltage overshoot；R is grid voltage control circuit
To the dead resistance of pulse power amplifier grid, C is the parasitic capacitance of grid voltage control circuit over the ground；
At this point, VgaVoltage hold-time τgaStablize time τ to change grid voltagegWith drain bias voltage failing edge time τdf
The sum of.
Be delayed τgThe trigger signal failing edge of duration reaches radio-frequency signal source, and radio-frequency signal source stops generating pumping signal；
Be delayed τgThe trigger signal failing edge of duration reaches leakage pressure control circuit, and leakage pressure control circuit stops to pulse power
Amplifier drain electrode provides drain bias voltage；
Pulse power amplifier stops working；
9] the t2 moment is between the t3 moment:
Pulse power amplifier works in A class；
The drain bias voltage of pulse power amplifier is gradually dropped to 0V；
10] the t3 moment:
The drain bias voltage of pulse power amplifier drops to 0V；
Grid voltage control circuit restores to provide B class operating bias voltage V to pulse power amplifiergb。
From fig. 5, it can be seen that pulse signal generator gives radio-frequency signal source and pulse power amplifier to provide pulse simultaneously
Trigger signal, pulse triggering signal generate pumping signal, and trigger pulse power amplifier leakage pressure for triggering radio-frequency signal source
Control circuit provides bias voltage to drain electrode, and triggering grid voltage control circuit provides correct bias voltage to grid.
It realizes in microwave excitation signal-off instantaneous power amplifier operation in A class, needs to judge microwave excitation signal
Close moment controls microwave excitation signal transmission delay, and accurately controls the size of gate bias voltage, it is ensured that in microwave excitation
Signal failing edge reaches the power amplifier moment or gate bias voltage has been changed to A class bias voltage before.Therefore the circuit
In other than grid voltage control circuit and leakage pressure control circuit further include rising edge detection circuit, failing edge detection circuit, first prolong
When circuit and the second delay circuit, the input terminal of rising edge detection circuit and failing edge detection circuit is and pulse signal generator
Output end connection.
The input terminal of rising edge detection circuit and failing edge detection circuit connects with the output end of pulse signal generator respectively
It connects；The output end of rising edge detection circuit is connect with the input terminal of leakage pressure control circuit and the second delay circuit input terminal；Decline
It is defeated along the output end and the input terminal of grid voltage control circuit of detection circuit, the input terminal of the first delay circuit and the second delay circuit
Enter end connection；The output end of first delay circuit is connect with voltage-controlled circuit input end processed is leaked；The output end of second delay circuit with
The connection of radio-frequency signal source input terminal；The output end of radio-frequency signal source and the signal input part of pulse power amplifier connect；Grid voltage
The output end of control circuit and leakage pressure control circuit is connected with pulse power amplifier grid and drain electrode respectively；
Rising edge detection circuit issues pulse signal rising edge for detecting pulse signal generator, and on pulse signal
It rises along when reaching, exports trigger signal to leakage pressure control circuit and the second delay circuit；Failing edge detection circuit is for detecting arteries and veins
It rushes signal generator and issues pulse signal failing edge, and when pulse signal failing edge reaches, prolong to grid voltage control circuit, first
When circuit and the second delay circuit export trigger signal；Grid voltage control circuit and leakage pressure control circuit are according to pulse signal control arteries and veins
Rush the operation class (of an amplifying stage) of power amplifier.
In conjunction with Fig. 4, the specific works engineering of foregoing circuit is described in detail:
t0Before moment, pulse signal generator does not generate pulse triggering signal, and grid voltage control circuit is in no trigger signal
Time make gate bias voltage B class quiescent potential Vgb；Pulse power amplifier does not work at this time；
In t0Moment, rising edge detection circuit detect pulse signal rising edge, send triggering letter to leakage pressure control circuit
Number, triggering leakage pressure control circuit drains to pulse power amplifier provides drain bias voltage, and grid voltage control circuit continues at this time
B class operating bias voltage V is provided to pulse power amplifiergb；Rising edge detection circuit sends the signal to second simultaneously and prolongs
When circuit, the second delay circuit is delayed to the pulse signal rising edge for being sent to radio-frequency signal source, and delay time is pulse
Power amplifier drain bias voltage changes to the needed time τ of required drain bias voltage from 0Vdr。
In t0Moment is to t1Between moment, pulse power amplifier drain bias voltage gradually rises to required leakage from 0V
Pole bias voltage；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
At the t1 moment:
Pulse power amplifier drain bias voltage has stabilized to required drain bias voltage；
Trigger signal rising edge by delay reaches radio-frequency signal source, and radio-frequency signal source starts to generate pumping signal；Grid
Pressure control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
The t1 moment is between the tc moment:
Pulse power amplifier works in B class；
The tc moment:
Failing edge detection circuit detects pulse signal failing edge, generates trigger signal, and triggering grid voltage control circuit starts
Adjust gate bias voltage；Failing edge detection circuit simultaneously prolongs the pulse signal failing edge for entering radio-frequency signal source by second
When circuit be delayed, delay time τg, and by the first delay circuit delay τgAfter time, sent to leakage pressure control circuit
Trigger signal；
The tc moment is between the t2 moment:
Pulse power amplifier working condition gradually becomes A class by B class, is now in AB class working condition；
The t2 moment:
As shown in fig. 6, grid voltage needs to stablize by changing grid voltage due to the influence for inputting dead resistance R and parasitic capacitance C
Time τgIt could change as Vga, τgIt is codetermined by R and C:
Wherein:
In formula, VtGate bias voltage when dropping in safe range for drain voltage overshoot, generally takes Vt=
0.9Vga；R is dead resistance of the grid voltage control circuit to pulse power amplifier grid, and C is the parasitism of grid voltage control circuit over the ground
Capacitor；According to R, C, Vga、VgbIt can calculate and change the stable time τ of grid voltageg。
At this point, VgaVoltage hold-time τgaStablize time τ to change grid voltagegWith drain bias voltage failing edge time τdf
The sum of.
Be delayed τgThe trigger signal failing edge of duration reaches radio-frequency signal source, and radio-frequency signal source stops generating pumping signal；
Be delayed τgThe trigger signal failing edge of duration reaches leakage pressure control circuit, and leakage pressure control circuit stops to pulse power
Amplifier drain electrode provides drain bias voltage；
Pulse power amplifier stops working；
The t2 moment is between the t3 moment:
Pulse power amplifier works in A class；
The drain bias voltage of pulse power amplifier is gradually dropped to 0V；
The t3 moment:
The drain bias voltage of pulse power amplifier drops to 0V；
Grid voltage control circuit restores to provide B class operating bias voltage V to pulse power amplifiergb。
As shown in figure 4, stablizing time τ due to changing grid voltagegWith the collective effect of delay circuit, pulse signal failing edge exists
T2 reaches power amplifier, and gate bias voltage has been changed to A class bias voltage at this time, can inhibit the generation of voltage overshoot.
Grid voltage control circuit makes gate bias voltage B class quiescent potential V in the time of not trigger signalgb, in trigger signal control
Below-center offset processed is in A class quiescent potential Vga。VgaVoltage hold-time τgaStablize time τ to change grid voltagegWith drain bias voltage
Failing edge time τdfThe sum of, i.e., in microwave excitation signal failing edge to holding A class work shape between drain bias voltage failing edge
State reverts to B class working condition, such as τ in Fig. 4 after drain bias voltage failing edgega、τg、τdfShown in relationship.It is draining
During bias voltage failing edge, drain current slowly reduces, and will not generate significant voltage overshoot.
A class drain voltage overshoot is small as can see from Figure 4, and stability is high, but low efficiency.B class is high-efficient, but drains
Voltage overshoot is big, and stability is poor.Mixing class pulse power amplifier proposed by the present invention makes pulse power amplifier when different
The advantages of work is carved different classes of, high efficiency and high stability can be obtained simultaneously.
Embodiment of above is equally applicable to bipolar junction transistor by taking the power amplifier that field effect transistor is constituted as an example
The power amplifier of composition.
Unspecified part of the present invention belongs to common sense well known to those skilled in the art.Exemplified as above and attached drawing is only pair
It is of the invention for example, do not constitute the limitation to protection scope of the present invention, it is all with the same or similar side of the present invention
Within method all belongs to the scope of protection of the present invention.
Claims (6)
1. power amplifier overshoot inhibits improved efficiency method under same trigger signal, which comprises the following steps:
1] before the t0 moment:
Pulse signal generator does not generate pulse triggering signal, and control-grid voltage control circuit provides B class to pulse power amplifier
Operating bias voltage Vgb；Pulse power amplifier does not work；
2] the t0 moment:
Pulse signal generator provides pulse triggering signal；
It is sent into the trigger signal rising edge of radio-frequency signal source, is delayed through delay circuit；
Trigger signal triggering leakage pressure control circuit drains to pulse power amplifier provides drain bias voltage；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
3] the t0 moment is between the t1 moment:
Pulse power amplifier drain bias voltage gradually rises to required drain bias voltage from 0V；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
4] the t1 moment:
Pulse power amplifier drain bias voltage has stabilized to required drain bias voltage；
Trigger signal rising edge by delay reaches radio-frequency signal source, and radio-frequency signal source starts to generate pumping signal；
Grid voltage control circuit continues to provide B class operating bias voltage V to pulse power amplifiergb；
5] the t1 moment is between the tc moment:
Pulse power amplifier works in B class；
6] the tc moment:
The pulse triggering signal that pulse signal generator generates reaches failing edge；
It is sent into the trigger signal failing edge of radio-frequency signal source, is delayed through delay circuit；
It is sent into the trigger signal failing edge of failing edge detection circuit, trigger signal is generated through failing edge detection circuit, triggers grid
Pressure control circuit starts to adjust gate bias voltage；
7] the tc moment is between the t2 moment:
Pulse power amplifier working condition gradually becomes A class by B class, is now in AB class working condition；
8] the t2 moment:
Stablize time τ by changing grid voltagegAfterwards, gate bias voltage variation is A class operating bias voltage Vga；
Wherein:
In formula, VtGate bias voltage when dropping in safe range for drain voltage overshoot；R is grid voltage control circuit to arteries and veins
The dead resistance of power amplifier grid is rushed, C is the parasitic capacitance of grid voltage control circuit over the ground；
Be delayed τgThe trigger signal failing edge of duration reaches radio-frequency signal source, and radio-frequency signal source stops generating pumping signal；
Be delayed τgThe trigger signal failing edge of duration reaches leakage pressure control circuit, and leakage pressure control circuit stops to Pulse Power Magnification
Device drain electrode provides drain bias voltage；
Pulse power amplifier stops working；
9] the t2 moment is between the t3 moment:
Pulse power amplifier is biased in A class；
The drain bias voltage of pulse power amplifier is gradually dropped to 0V；
10] the t3 moment:
The drain bias voltage of pulse power amplifier drops to 0V；
Grid voltage control circuit restores to provide B class operating bias voltage V to pulse power amplifiergb。
2. power amplifier overshoot inhibits improved efficiency method under same trigger signal according to claim 1, it is characterised in that:
Step 8] in, VgaVoltage hold-time τgaStablize time τ to change grid voltagegWith drain bias voltage failing edge time τdfIt
With.
3. a kind of circuit for realizing claim 1 the method, it is characterised in that: including pulse signal generator, radiofrequency signal
Source and control circuit；
The control circuit include rising edge detection circuit, failing edge detection circuit, the first delay circuit, the second delay circuit,
Leakage pressure control circuit and grid voltage control circuit；
The input terminal of the rising edge detection circuit and failing edge detection circuit connects with the output end of pulse signal generator respectively
It connects；The output end of rising edge detection circuit is connect with the input terminal of leakage pressure control circuit and the second delay circuit input terminal；Decline
It is defeated along the output end and the input terminal of grid voltage control circuit of detection circuit, the input terminal of the first delay circuit and the second delay circuit
Enter end connection；The output end of first delay circuit is connect with voltage-controlled circuit input end processed is leaked；The output end of second delay circuit with
The connection of radio-frequency signal source input terminal；The output end of radio-frequency signal source with the signal input part of pulse power amplifier for connecting；
Grid voltage control circuit and the output end of leakage pressure control circuit are respectively used to connect with pulse power amplifier grid and drain electrode.
4. circuit according to claim 3, it is characterised in that: the delay time of first delay circuit is τg；Described
Two delay circuits change to institute from 0V for pulse power amplifier drain bias voltage to the delay time of pulse signal rising edge
Need the needed time τ of drain bias voltagedr；Second delay circuit is τ to the delay time of pulse signal failing edgeg。
5. a kind of power amplifier, including pulse power amplifier, it is characterised in that: further include any electricity of claim 3 or 4
Road, the output end of radio-frequency signal source and the signal input part of pulse power amplifier connect；Grid voltage control circuit and the voltage-controlled system of leakage
The output end of circuit is connected with pulse power amplifier grid and drain electrode respectively.
6. power amplifier according to claim 5, it is characterised in that: the pulse power amplifier is field effect transistor composition
Power amplifier or bipolar junction transistor constitute power amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910243505.3A CN109981080B (en) | 2019-03-28 | 2019-03-28 | Method and circuit for improving overshoot suppression efficiency of power amplifier under same pulse trigger signal and power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910243505.3A CN109981080B (en) | 2019-03-28 | 2019-03-28 | Method and circuit for improving overshoot suppression efficiency of power amplifier under same pulse trigger signal and power amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109981080A true CN109981080A (en) | 2019-07-05 |
| CN109981080B CN109981080B (en) | 2020-08-14 |
Family
ID=67081294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910243505.3A Expired - Fee Related CN109981080B (en) | 2019-03-28 | 2019-03-28 | Method and circuit for improving overshoot suppression efficiency of power amplifier under same pulse trigger signal and power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109981080B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113156212A (en) * | 2021-05-07 | 2021-07-23 | 广州赛恩科学仪器有限公司 | DC bias output system and method of AC self-balancing bridge |
| CN117691957A (en) * | 2024-02-04 | 2024-03-12 | 成都明夷电子科技股份有限公司 | Radio frequency amplifier bias circuit with adjustable overshoot amplitude |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020024383A1 (en) * | 2000-08-29 | 2002-02-28 | Edoardo Botti | Power amplification equipment |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
| US20150194936A1 (en) * | 2014-01-09 | 2015-07-09 | Qualcomm Incorporated | Power amplifier envelope tracking |
| CN208623642U (en) * | 2018-07-02 | 2019-03-19 | 南京正銮电子科技有限公司 | A kind of programmable pulse delay leakage pressure control circuit |
-
2019
- 2019-03-28 CN CN201910243505.3A patent/CN109981080B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020024383A1 (en) * | 2000-08-29 | 2002-02-28 | Edoardo Botti | Power amplification equipment |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
| US20150194936A1 (en) * | 2014-01-09 | 2015-07-09 | Qualcomm Incorporated | Power amplifier envelope tracking |
| CN208623642U (en) * | 2018-07-02 | 2019-03-19 | 南京正銮电子科技有限公司 | A kind of programmable pulse delay leakage pressure control circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113156212A (en) * | 2021-05-07 | 2021-07-23 | 广州赛恩科学仪器有限公司 | DC bias output system and method of AC self-balancing bridge |
| CN113156212B (en) * | 2021-05-07 | 2023-09-05 | 广州赛恩科学仪器有限公司 | DC offset output system and method of AC self-balancing bridge |
| CN117691957A (en) * | 2024-02-04 | 2024-03-12 | 成都明夷电子科技股份有限公司 | Radio frequency amplifier bias circuit with adjustable overshoot amplitude |
| CN117691957B (en) * | 2024-02-04 | 2024-04-26 | 成都明夷电子科技股份有限公司 | Radio frequency amplifier bias circuit with adjustable overshoot amplitude |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109981080B (en) | 2020-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wright et al. | An efficient, linear, broadband class-J-mode PA realised using RF waveform engineering | |
| US10615755B2 (en) | Non-linear high-frequency amplifier arrangement | |
| CN109981080A (en) | Power amplifier overshoot inhibits improved efficiency method, circuit and power amplifier under same trigger signal | |
| Cappello et al. | Supply modulation of a broadband load modulated balanced amplifier | |
| Wolff et al. | 100-MHz GaN-HEMT class-G supply modulator for high-power envelope-tracking applications | |
| Fishler et al. | Supply modulation of a linear Doherty power amplifier | |
| Feuerschütz et al. | A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT | |
| CN109995333A (en) | Pumping signal triggers lower power amplifier overshoot and inhibits improved efficiency method, circuit and power amplifier | |
| CN108874011A (en) | A kind of grid modulation circuit of LDMOS solid-state power amplifier | |
| Yu et al. | Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs | |
| Pajic et al. | X-band two-stage high-efficiency switched-mode power amplifiers | |
| CN218570209U (en) | Microwave amplifier tube grid voltage control pulse modulation device | |
| CN104639069B (en) | A kind of radio frequency amplifying circuit and its power limitation module | |
| CN208608971U (en) | A kind of gallium nitride microwave integrated circuit pulse modulated circuit | |
| Hong et al. | High efficiency GaN HEMT power amplifier optimized for OFDM EER transmitter | |
| Jee et al. | GaN MMIC broadband Doherty power amplifier | |
| Clarke et al. | Investigation and analysis into device optimization for attaining efficiencies in-excess of 90% when accounting for higher harmonics | |
| Kim et al. | Optimized peaking amplifier of Doherty amplifier using an inductive input second harmonic load | |
| Kim et al. | Doherty power amplifier design employing direct input power dividing for base station applications | |
| Dani et al. | 4W X-band high efficiency MMIC PA with output harmonic injection | |
| Albrecht et al. | DARPA's microscale power conversion program | |
| JP6155636B2 (en) | Wireless communication apparatus, signal adjustment circuit, and signal adjustment method | |
| Kang et al. | Envelope-tracking two-stage power amplifiers | |
| Custer et al. | High efficiency switch mode GaN-based power amplifiers for P-band aerospace applications | |
| Kim et al. | A novel design method of highly efficient saturated power amplifier based on self-generated harmonic currents |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200814 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |