CN109981059B - Clutter suppression circuit of power amplifier - Google Patents
Clutter suppression circuit of power amplifier Download PDFInfo
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- CN109981059B CN109981059B CN201910134189.6A CN201910134189A CN109981059B CN 109981059 B CN109981059 B CN 109981059B CN 201910134189 A CN201910134189 A CN 201910134189A CN 109981059 B CN109981059 B CN 109981059B
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- slot line
- power amplifier
- line resonator
- closed
- etching
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- 230000001629 suppression Effects 0.000 title claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 40
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 230000002441 reversible effect Effects 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention relates to a clutter suppression circuit of a power amplifier, comprising: an outer half-wavelength slot line resonator and an inner single-ended closed slot line resonator; the outer half-wavelength slot line resonator and the inner single-ended closed slot line resonator are formed on the power amplifier output matching transmission line through etching. The outside half-wavelength slot line resonator is in a shape with two ends not closed, and the inside single-end closed slot line resonator is in a shape with one end closed and the other end not closed. The invention has the advantages that: the clutter on both sides of the band-pass power amplifier plays a role in inhibiting, and extra clutter is not introduced on both sides of the passband; the circuit is small in size and does not occupy extra chip area; the power amplifier adopting the clutter suppression circuit structure has the advantages of high efficiency, high linearity and small size.
Description
Technical Field
The invention belongs to the technical field of power amplifier design, and particularly relates to a clutter suppression circuit of a power amplifier.
Background
The power amplifier has high linearity requirement, and the method for improving the linearity generally comprises an adaptive bias technology, a power back-off technology, a negative feedback technology, a harmonic suppression technology and the like, wherein the existing adaptive bias technology has a complex circuit structure and basically mature theory; the power backoff technique and the negative feedback technique lose power performance; the common harmonic suppression technology introduces LC (inductance capacitance) in or out of the chip to play a role in suppressing out-of-band harmonic, but the structure has long debugging time and inaccuracy, can only suppress clutter and harmonic at high frequency, and is difficult to suppress clutter at low frequency.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a clutter suppression circuit of a power amplifier, which solves the problems that low-frequency clutter is difficult to suppress and the linearity of the power amplifier is improved in the prior art.
The technical scheme for solving the technical problems is as follows:
according to one aspect of the present invention, there is provided a power amplifier clutter suppression circuit comprising:
an outer half-wavelength slot line resonator and an inner single-ended closed slot line resonator;
the outer half-wavelength slot line resonator and the inner single-ended closed slot line resonator are formed on the power amplifier output matching transmission line through etching.
Preferably, the outside half-wavelength slot line resonator has a shape with two non-closed ends, and the inside single-ended closed slot line resonator has a shape with one closed end and the other non-closed end.
Preferably, the outer half-wavelength slot line resonator has a rectangular shape with an open lower part, and the inner single-end closed slot line resonator has a reverse 6 shape or a positive 6 shape with one end closed.
Preferably, the length of the outer half-wavelength slot line resonator is 2.1mm, and the length of the inner single-end closed slot line resonator is 3.8mm.
Preferably, the length of the outer half-wavelength slot line resonator is variable.
Preferably, the inner single-ended closed slot line resonator has a closed end and an unclosed end.
Preferably, the length of the non-closed end of the inner single-ended closed slot line resonator is variable.
Preferably, the etching method is dry etching or wet etching.
Preferably, the dry etching is specifically metal etching.
Preferably, the etching is patterned etching.
Preferably, the line shapes of the outer half-wavelength slot line resonator and the inner single-end closed slot line resonator are straight lines, arc lines or wavy lines.
Preferably, the number of the outer half-wavelength slot line resonators is one or more, and the number of the inner single-ended closed slot line resonators is one or more.
By adopting the technical scheme, the invention has the advantages that:
1. the clutter on both sides of the band-pass power amplifier plays a role in inhibiting, and extra clutter is not introduced on both sides of the passband;
2. the circuit is small in size and does not occupy extra chip area;
3. the power amplifier adopting the clutter suppression circuit structure has the advantages of high efficiency, high linearity and small size.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic diagram of a clutter suppression circuit structure of a power amplifier and a position distribution diagram of the power amplifier;
FIG. 2 is a schematic diagram of a spurious suppression circuit (inside single-ended not closed) of a power amplifier according to an embodiment of the present invention;
FIG. 3 is a graph of spurious suppression results for a power amplifier spurious suppression circuit (inside single ended not closed) according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a spurious suppression circuit (inside single-ended closed) of a power amplifier according to an embodiment of the present invention;
FIG. 5 is a graph of spurious suppression results for a power amplifier spurious suppression circuit (inside single ended closed) according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of another power amplifier spurious suppression circuit (inside single-ended closed) according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a clutter suppression circuit (with an inner single-ended closed) of a power amplifier according to another embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The clutter suppression circuit structure of the invention successfully suppresses the clutter on both sides of the band-pass power amplifier while not increasing the redundant clutter on both sides of the passband, thereby achieving the purpose of improving the linearity of the whole circuit.
The embodiment relates to a clutter suppression circuit of a power amplifier, which consists of an outer half-wavelength slot line resonator 1 and an inner single-end closed slot line resonator 2, and is etched on an output matching transmission line of the power amplifier, as shown in fig. 1. The clutter suppression circuit of the power amplifier is etched on the output matching transmission line of the power amplifier, plays a role in suppressing clutter on two sides outside a passband, can effectively improve the linearity of the bandpass power amplifier and does not occupy extra chip area.
When the outside half-wavelength slot line resonator 1 and the inside single-end closed slot line resonator 2 are etched, the following method can be adopted: dry etching and wet etching. The dry etching is to expose the surface of silicon slice and other materials to plasma generated in gas state, and the plasma passes through the window opened in the photoresist to react with silicon slice and other materials physically or chemically (or both reactions) to remove the exposed surface materials. Dry etching is the most important method for etching devices at submicron dimensions. In wet etching, however, liquid chemicals (e.g., acids, bases, solvents, etc.) chemically remove materials from the wafer surface. Wet etching is generally only used in the case of larger dimensions (greater than 3 microns). Wet etching is still used to etch certain layers on materials such as silicon wafers or to remove residues after dry etching.
Dry etching may also be classified according to the type of material being etched. The etching is mainly divided into three types according to the material: metal etching, dielectric etching, and silicon etching. Dielectric etching is etching for dielectric materials such as silicon dioxide. The fabrication of contact and via structures requires etching dielectric to etch windows in the ILD, while window etching with high aspect ratios (ratio of the depth to the width of the window) is challenging. Silicon etching (including polysilicon) is used in applications where silicon removal is desired, such as etching polysilicon transistor gates and silicon trench capacitors. The metal etching is mainly to remove the aluminum alloy composite layer on the metal layer to manufacture the interconnection line. The invention can etch the circuit pattern on the cross section of the power amplifier output matching transmission line by adopting metal etching.
The etching of the present invention may also employ patterned etching and non-patterned etching. Patterned etching uses a masking layer (patterned photoresist) to define the areas of the surface material to be etched away, only selected portions of the silicon wafer or the like being etched away during the etching process. Patterned etching may be used to fabricate a variety of different features on a silicon wafer, including gates, metal interconnects, vias, contact holes, and trenches. The etching process is used for stripping mask layers (such as STI silicon nitride stripping and titanium stripping after silicide process for preparing transistor injection side wall). The back-etching is used when it is desired to reduce the total thickness of a certain layer (e.g., to reduce topography when planarizing the wafer surface). Photoresist is another example of lift-off. In general, patterned etching and non-patterned etching process conditions can be implemented using dry etching or wet etching techniques. In order to replicate the mask pattern on the surface material of a silicon wafer or other material, the etching must meet specific requirements. The method comprises the following steps of: etch rate, etch profile, etch bias, selectivity, uniformity, residue, polymer, plasma-induced damage, particle contamination, defects, and the like. Etching is a process that uses chemical or physical means to selectively remove unwanted material from the surface of a silicon wafer. The basic goal of etching is to properly replicate a mask pattern on a glued silicon wafer or the like. The patterned photoresist layer is not significantly eroded by the source of the etch during etching. The masking film is used for protecting special areas on the silicon wafer during etching and selectively etching away areas which are not protected by photoresist.
Fig. 2 is a schematic diagram of a noise suppression circuit (with an inner single-ended non-closed) of a power amplifier according to an embodiment of the invention, and fig. 3 is a graph of a noise suppression result of a noise suppression circuit (with an inner single-ended non-closed) of a power amplifier according to an embodiment of the invention, if the inner half-wavelength slot line resonator is not closed, unnecessary noise is introduced at a lower frequency of a passband while suppressing low frequency noise, and the noise does not disappear along with the change of length.
Fig. 4 is a schematic diagram of a clutter suppression circuit (with an inner single-ended closed structure) of a power amplifier according to an embodiment of the present invention, wherein the outer half-wavelength slot line resonator 1 has a rectangular shape with an open bottom, and the inner single-ended closed slot line resonator 2 has a reverse 6 shape or a positive 6 shape with a single-ended closed structure.
As shown in FIG. 5, which is a graph of noise suppression results of a power amplifier noise suppression circuit (with an inner single-ended closed state), after the inner half-wavelength slot line resonator is closed, low-frequency noise is suppressed while unnecessary noise is not introduced at a lower frequency of a passband, so that noise at both sides in the passband can be effectively suppressed.
In the embodiment of the invention, the high-frequency end clutter of the band-pass power amplifier can be restrained by adjusting the length of the outer half-wavelength slot line resonator 1, and the frequency is variable along with the length of the outer half-wavelength slot line resonator 1; the band-pass power amplifier low frequency side noise can be suppressed by adjusting the length of the non-closed end of the inside single-ended closed slot line resonator 2, and the frequency is variable with the length of the non-closed end of the inside single-ended closed slot line resonator 2. In this embodiment, the length of the outer half-wavelength slot line resonator 1 (referred to as the overall length of 1 including three-segment components) is 2.1mm, corresponding to the frequency point of 32.3GHz, and the length of the inner single-ended closed slot line resonator 2 (referred to as the overall length of 2 including six-segment components) is 3.8mm, corresponding to the frequency point of 22GHz.
Fig. 6 is a schematic diagram of a clutter suppression circuit (with an inner single-ended closed structure) of another power amplifier according to an embodiment of the present invention, as shown in fig. 6, the outer half-wavelength slot line resonator 1 and the inner single-ended closed slot line resonator 2 are formed by arc curves, that is, the shapes of the outer half-wavelength slot line resonator 1 and the inner single-ended closed slot line resonator 2 are not limited to be square, circular, wavy or other shapes, so long as the shapes of the outer half-wavelength slot line resonator 1 with two ends not closed and the inner single-ended closed slot line resonator 2 with one end closed and the other end not closed are satisfied. Correspondingly, the line shapes of the outer half-wavelength slot line resonator 1 and the inner single-end closed slot line resonator 2 can be straight lines, arc lines or wavy lines.
In addition, for the inner single-end closed slot line resonator 2, the number of turns of which the closed end is wound inwards may be not limited to one turn shown in fig. 6, but may be two turns (as shown in fig. 7), three turns … …, or the like, and then the turns may be wound.
In addition, the number of the outside half wavelength slot line resonators 1 and the inside single-ended closed slot line resonators 2 may be one, respectively, or may be other numbers, for example, 2 outside half wavelength slot line resonators 1 and 1 inside single-ended closed slot line resonators 2, or 2 outside half wavelength slot line resonators 1 and 2 inside single-ended closed slot line resonators 2, or 3 outside half wavelength slot line resonators 1 and 3 inside single-ended closed slot line resonators 2, or the like.
The clutter suppression circuit of the power amplifier plays a role in suppressing clutter on two sides of the band-pass power amplifier, and extra clutter is not introduced on two sides of the band-pass; the circuit is small in size and does not occupy extra chip area; the power amplifier adopting the clutter suppression circuit structure has the advantages of high efficiency, high linearity and small size.
The above specific embodiments are further described in detail for the purposes, technical solutions and embodiments of the present invention, and it should be understood that the above is only a specific embodiment of the present invention, and the linearity improving method can be applied to various microstrip transmission line structures, and brings great benefits in millimeter wave frequency bands and semiconductor processing technologies.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A power amplifier clutter suppression circuit, comprising:
an outer half-wavelength slot line resonator and an inner single-ended closed slot line resonator;
the outer half-wavelength slot line resonator and the inner single-end closed slot line resonator are formed on the power amplifier output matching transmission line through etching;
the outside half-wavelength slot line resonator is in a rectangular shape with an opening at the lower part, and the inside single-end closed slot line resonator is in a reverse 6 shape or a positive 6 shape with one end closed and the other end not closed;
the line shapes of the outer half-wavelength slot line resonator and the inner single-end closed slot line resonator are straight lines.
2. The power amplifier clutter suppression circuit of claim 1, wherein,
the length of the outer half-wavelength slot line resonator is variable.
3. The power amplifier clutter suppression circuit of claim 1, wherein,
the length of the non-closed end of the inner single-ended closed slot line resonator is variable.
4. The power amplifier clutter suppression circuit of claim 1, wherein,
the etching method is dry etching or wet etching.
5. The power amplifier clutter suppression circuit of claim 4, wherein,
the dry etching is specifically metal etching.
6. The power amplifier clutter suppression circuit of claim 1, wherein,
the etching is pattern etching.
7. The power amplifier clutter suppression circuit of claim 1, wherein,
the number of the outer half-wavelength slot line resonators is one or more, and the number of the inner single-ended closed slot line resonators is one or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910134189.6A CN109981059B (en) | 2019-02-22 | 2019-02-22 | Clutter suppression circuit of power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910134189.6A CN109981059B (en) | 2019-02-22 | 2019-02-22 | Clutter suppression circuit of power amplifier |
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| Publication Number | Publication Date |
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| CN109981059A CN109981059A (en) | 2019-07-05 |
| CN109981059B true CN109981059B (en) | 2023-11-17 |
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| CN201910134189.6A Active CN109981059B (en) | 2019-02-22 | 2019-02-22 | Clutter suppression circuit of power amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100216547B1 (en) * | 1997-05-19 | 1999-08-16 | 정선종 | High-Tc superconducting(HTS) closed loop resonator type 4-pole bandpasses filter and manufacturing process of the filter |
| JP3452032B2 (en) * | 2000-06-26 | 2003-09-29 | 株式会社村田製作所 | Filter, duplexer and communication device |
| KR101134832B1 (en) * | 2005-06-17 | 2012-04-13 | 엘지이노텍 주식회사 | Resonator of Front End Module |
| KR20090077510A (en) * | 2008-01-11 | 2009-07-15 | 한국과학기술원 | Voltage controlled oscillator using varactor-loaded split-ring resonator |
| JP6112675B2 (en) * | 2012-03-29 | 2017-04-12 | 国立大学法人電気通信大学 | Transmission line resonator, bandpass filter using transmission line resonator, duplexer, synthesizer, bandstop filter, high-pass filter, balanced bandpass filter, and low-pass filter |
| CN105098304B (en) * | 2014-05-20 | 2018-11-16 | 中国科学院微电子研究所 | A kind of filter and forming method thereof |
| CN105789750A (en) * | 2014-12-22 | 2016-07-20 | 哈尔滨飞羽科技有限公司 | E type resonator and T type feeder line based dual-mode dual-band narrow-band filter |
| CN109167582B (en) * | 2018-07-23 | 2021-09-03 | 华南理工大学 | Broadband band-pass filtering power amplifier based on frequency selective coupling |
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