CN109980502A - VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning - Google Patents

VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning Download PDF

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Publication number
CN109980502A
CN109980502A CN201910389431.4A CN201910389431A CN109980502A CN 109980502 A CN109980502 A CN 109980502A CN 201910389431 A CN201910389431 A CN 201910389431A CN 109980502 A CN109980502 A CN 109980502A
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CN
China
Prior art keywords
luminous point
vcsel
scanning
mems micromirror
shot
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Pending
Application number
CN201910389431.4A
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Chinese (zh)
Inventor
王俊
刘恒
谭少阳
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Suzhou Changguanghua Core Semiconductor Laser Innovation Research Institute Co Ltd
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Suzhou Changguanghua Core Semiconductor Laser Innovation Research Institute Co Ltd
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Priority to CN201910389431.4A priority Critical patent/CN109980502A/en
Publication of CN109980502A publication Critical patent/CN109980502A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

The present invention provides a kind of VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning comprising: single-shot luminous point VCSEL laser and MEMS micromirror;Single-shot luminous point VCSEL laser includes: rear electrode, substrate layer, epitaxial layer, front electrode, front electrode, epitaxial layer, substrate layer, rear electrode are cascading from top to bottom, MEMS micromirror is located on the emitting light path of single-shot luminous point VCSEL laser, MEMS micromirror includes: the driving mechanism of reflecting mirror and driving reflecting mirror rotation, reflecting mirror has first rotating shaft and the second shaft, and first rotating shaft and the second shaft are perpendicular.The present invention is reflected the light that single-shot luminous point VCSEL laser emits by MEMS micromirror, is rapidly projected on object in a manner of dot matrix, is realized the imaging of object, and which obviate intensive laser dot matrix is arranged.

Description

VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning
Technical field
The present invention relates to VCSEL area source technical field more particularly to a kind of VCSEL single-shots based on MEMS micromirror scanning Luminous point light-source system.
Background technique
VCSEL device full name is vertical cavity surface emitting laser, is risen in the last century 70's, by recent decades Development obtains significant progress.Compared to edge-emission semiconductor laser, VCSEL has laser emitting direction perpendicular to substrate Surface, available circular light spot, dynamic single mode is good, is easy to the advantages that integrated with other semiconductor devices.By these advantages VCSEL device obtains the extensive concern of people, gradually in fields such as 3D imaging, optic communication, optical storage, laser display and illuminations Obtain application.
In 3D imaging field, such as when VCSEL device is for carrying out recognition of face on smart phone, mainstream at present VCSEL surface light source system, which mainly passes through, improves lattice luminous number of laser and the high-precision 3D imaging of density realization.However, Aforesaid way is there are at high cost, the problem of complex process.Therefore, in view of the above-mentioned problems, it is necessary to propose further solution party Case.
Summary of the invention
The present invention is intended to provide a kind of VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning, existing to overcome Deficiency present in technology.
In order to solve the above technical problems, the technical scheme is that
A kind of VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning comprising: single-shot luminous point VCSEL laser Device and MEMS micromirror;
The single-shot luminous point VCSEL laser includes: rear electrode, substrate layer, epitaxial layer, front electrode, the front Electrode, epitaxial layer, substrate layer, rear electrode are cascading from top to bottom, and the MEMS micromirror is located at the single-shot luminous point On the emitting light path of VCSEL laser, the MEMS micromirror includes: the driving machine of reflecting mirror and the driving reflecting mirror rotation Structure, the reflecting mirror have first rotating shaft and the second shaft, and the first rotating shaft and second shaft are perpendicular.
As the improvement of VCSEL single-shot luminous point light-source system of the invention, the substrate layer is conductive semiconductor substrate layer.
As the improvement of VCSEL single-shot luminous point light-source system of the invention, the epitaxial layer is outside highly doped semiconductor Prolong layer.
As the improvement of VCSEL single-shot luminous point light-source system of the invention, the epitaxial layer includes: upper dbr structure, active Layer structure and lower dbr structure, the upper dbr structure, active layer structure and lower dbr structure stack gradually set from top to bottom It sets.
As the improvement of VCSEL single-shot luminous point light-source system of the invention, the driving mechanism include: wire coil and Magnet, the wire coil is located at the periphery of the reflecting mirror, and leans with the edge of the reflecting mirror, the magnet Below the reflecting mirror.
As the improvement of VCSEL single-shot luminous point light-source system of the invention, the reflecting mirror is rotated with first rotating shaft When, the single-shot luminous point VCSEL laser is scanned a column of scanning area, and the reflecting mirror is turned with the second shaft When dynamic, the single-shot luminous point VCSEL laser is scanned a line of scanning area.
As the improvement of VCSEL single-shot luminous point light-source system of the invention, the single-shot luminous point VCSEL laser is formed pair The scanning lattice for the periodic arrangement that scanning area is scanned by column or progressively scanned.
As the improvement of VCSEL single-shot luminous point light-source system of the invention, the single-shot luminous point VCSEL laser is to scanning Region carries out the irregular scanning lattice for scanning and forming irregular alignment.
Compared with prior art, the beneficial effects of the present invention are: the present invention is swashed single-shot luminous point VCSEL by MEMS micromirror The light of light device transmitting is reflected, and is rapidly projected on object in a manner of dot matrix, is realized the imaging of object, which obviate Intensive laser dot matrix is set, the scanning imagery of object only can be realized by a single-shot luminous point VCSEL laser.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this The some embodiments recorded in invention, for those of ordinary skill in the art, without creative efforts, It is also possible to obtain other drawings based on these drawings.
Fig. 1 is VCSEL single-shot luminous point light-source system one specific embodiment of the invention based on MEMS micromirror scanning Structural schematic diagram;
Fig. 2 is VCSEL single-shot luminous point light-source system one specific embodiment of the invention based on MEMS micromirror scanning Structural schematic diagram;
Fig. 3 is the structure of MEMS micromirror in the VCSEL single-shot luminous point light-source system of the invention based on MEMS micromirror scanning Schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, 2, the present invention provides a kind of VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning, It include: single-shot luminous point VCSEL laser 1 and MEMS micromirror 2.
The single-shot luminous point VCSEL laser 1 is for projecting laser comprising: rear electrode 11, substrate layer 12, extension Layer 13, front electrode 14.Wherein, the front electrode 14, epitaxial layer 13, substrate layer 12, rear electrode 11 be from top to bottom successively It is stacked.Preferably, the substrate layer 12 is using conductive semiconductor substrate layer.The epitaxial layer 13 is using highly doped half Conductor epitaxial layer.
The epitaxial layer 13 includes: upper dbr structure 131, active layer structure 132 and lower dbr structure 133.Wherein, described Upper dbr structure 131, active layer structure 132 and lower dbr structure 133 are cascading from top to bottom.
As shown in figure 3, projection of the MEMS micromirror 2 for realizing the laser, and by the rotation of itself, it will project Laser projected on object in a manner of dot matrix, realize the scanning and imaging of object, including rule and irregular scan pattern.
Specifically, the MEMS micromirror 2 is located on the emitting light path of the single-shot luminous point VCSEL laser 1.The MEMS Micro mirror 2 includes: the driving mechanism 22 that reflecting mirror 21 and the driving reflecting mirror 21 rotate.Wherein, the reflecting mirror 21 has First rotating shaft and the second shaft, the first rotating shaft and second shaft are perpendicular.In the driving of the driving mechanism 22 Under, the reflecting mirror 21 is rotated using the first rotating shaft or the second shaft as axis.
In one embodiment, the driving mechanism 22 includes: wire coil 221 and magnet 222, the metal wire Circle 221 is located at the periphery of the reflecting mirror 21, and leans with the edge of the reflecting mirror 21, and the magnet 222 is located at 21 lower section of reflecting mirror, and the wire coil 221 is located in the magnetic field range of the magnet 222.By to wire coil The control of size of current in 221, the speed of control MEMS micromirror rotation.
To which after wire coil 221 is passed through electric current, reflecting mirror 21 can be produced in wire coil 221 and the interaction of magnet 222 Raw electromagnetic force is rotated by, and then changes the laser path being incident upon on reflecting mirror 21, to realize that single-shot luminous point VCSEL swashs The scanning of light device 1.
When being scanned, when the reflecting mirror 21 is rotated with first rotating shaft, the single-shot luminous point VCSEL laser 1 One column of scanning area are scanned, when the reflecting mirror 21 is rotated with the second shaft, the single-shot luminous point VCSEL swashs Light device 1 is scanned a line of scanning area.To, the single-shot luminous point VCSEL laser 1 scanning area can be carried out by Column scan or progressive scan.In addition, rotating first rotating shaft and the second shaft simultaneously may be implemented to the irregular of scanning area Scanning.
In conclusion the present invention is reflected the light that single-shot luminous point VCSEL laser emits by MEMS micromirror, fastly Fast ground is projected on object in a manner of dot matrix, realizes the imaging of object, which obviate intensive laser dot matrix is arranged, is only led to Crossing a single-shot luminous point VCSEL laser can be realized the scanning imagery of object.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art The other embodiments being understood that.

Claims (8)

1. a kind of VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning, which is characterized in that the VCSEL single-shot light Point light source system includes: single-shot luminous point VCSEL laser and MEMS micromirror;
The single-shot luminous point VCSEL laser includes: rear electrode, substrate layer, epitaxial layer, front electrode, the front electrode, Epitaxial layer, substrate layer, rear electrode are cascading from top to bottom, and the MEMS micromirror is located at the single-shot luminous point VCSEL On the emitting light path of laser, the MEMS micromirror includes: the driving mechanism of reflecting mirror and the driving reflecting mirror rotation, institute Reflecting mirror is stated with first rotating shaft and the second shaft, the first rotating shaft and second shaft are perpendicular.
2. the VCSEL single-shot luminous point light-source system according to claim 1 based on MEMS micromirror scanning, which is characterized in that The substrate layer is conductive semiconductor substrate layer.
3. the VCSEL single-shot luminous point light-source system according to claim 1 based on MEMS micromirror scanning, which is characterized in that The epitaxial layer is highly doped semiconductor epitaxial layers.
4. the VCSEL single-shot luminous point light-source system according to claim 1 based on MEMS micromirror scanning, which is characterized in that The epitaxial layer includes: upper dbr structure, active layer structure and lower dbr structure, the upper dbr structure, active layer structure and Lower dbr structure is cascading from top to bottom.
5. the VCSEL single-shot luminous point light-source system according to claim 1 based on MEMS micromirror scanning, which is characterized in that The driving mechanism includes: wire coil and magnet, and the wire coil is located at the periphery of the reflecting mirror, and with it is described anti- The surrounding for penetrating mirror mutually approaches, and the magnet is located at below the reflecting mirror.
6. the VCSEL single-shot luminous point light-source system according to claim 1 based on MEMS micromirror scanning, which is characterized in that When the reflecting mirror is rotated with first rotating shaft, the single-shot luminous point VCSEL laser sweeps a column of scanning area It retouches, when the reflecting mirror is rotated with the second shaft, the single-shot luminous point VCSEL laser carries out a line of scanning area Scanning.
7. the VCSEL single-shot luminous point light-source system according to claim 6 based on MEMS micromirror scanning, which is characterized in that The single-shot luminous point VCSEL laser forms the scanning for the periodic arrangement for being scanned by column or being progressively scanned to scanning area Dot matrix.
8. the VCSEL single-shot luminous point light-source system according to claim 6 based on MEMS micromirror scanning, which is characterized in that The single-shot luminous point VCSEL laser carries out the scanning lattice that irregular scanning forms irregular alignment to scanning area.
CN201910389431.4A 2019-05-10 2019-05-10 VCSEL single-shot luminous point light-source system based on MEMS micromirror scanning Pending CN109980502A (en)

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CN101442182A (en) * 2007-11-22 2009-05-27 佳能株式会社 Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
CN101599616A (en) * 2008-06-03 2009-12-09 株式会社理光 Vcsel, device, optical scanning device and imaging device
CN102087414A (en) * 2010-11-03 2011-06-08 徐英舜 Array-type partition projection method
CN102117001A (en) * 2010-11-03 2011-07-06 徐英舜 Minisize array-type laser-scanning projection device
CN105212898A (en) * 2015-08-31 2016-01-06 睿芯生命科技(深圳)有限公司 A kind of reflective optoacoustic micro imaging system
CN105824176A (en) * 2016-03-02 2016-08-03 上海理鑫光学科技有限公司 Curved surface reflecting type ultra-short focal projection lens based on mems
CN207623628U (en) * 2017-12-01 2018-07-17 北京万集科技股份有限公司 A kind of colimated light system and laser radar based on MEMS galvanometers
CN108931781A (en) * 2018-05-25 2018-12-04 深圳新亮智能技术有限公司 high speed three-dimensional laser radar system based on VCSEL laser light source
CN108983197A (en) * 2018-08-15 2018-12-11 武汉煜炜光学科技有限公司 3-D scanning laser radar based on MEMS micromirror
CN109521561A (en) * 2018-12-11 2019-03-26 苏州希景微机电科技有限公司 A kind of electromagnetism MEMS micromirror
CN209766860U (en) * 2019-05-10 2019-12-10 苏州长光华芯半导体激光创新研究院有限公司 VCSEL single luminous point light source system based on MEMS micro-mirror scanning

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101442182A (en) * 2007-11-22 2009-05-27 佳能株式会社 Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
CN101599616A (en) * 2008-06-03 2009-12-09 株式会社理光 Vcsel, device, optical scanning device and imaging device
CN102087414A (en) * 2010-11-03 2011-06-08 徐英舜 Array-type partition projection method
CN102117001A (en) * 2010-11-03 2011-07-06 徐英舜 Minisize array-type laser-scanning projection device
CN105212898A (en) * 2015-08-31 2016-01-06 睿芯生命科技(深圳)有限公司 A kind of reflective optoacoustic micro imaging system
CN105824176A (en) * 2016-03-02 2016-08-03 上海理鑫光学科技有限公司 Curved surface reflecting type ultra-short focal projection lens based on mems
CN207623628U (en) * 2017-12-01 2018-07-17 北京万集科技股份有限公司 A kind of colimated light system and laser radar based on MEMS galvanometers
CN108931781A (en) * 2018-05-25 2018-12-04 深圳新亮智能技术有限公司 high speed three-dimensional laser radar system based on VCSEL laser light source
CN108983197A (en) * 2018-08-15 2018-12-11 武汉煜炜光学科技有限公司 3-D scanning laser radar based on MEMS micromirror
CN109521561A (en) * 2018-12-11 2019-03-26 苏州希景微机电科技有限公司 A kind of electromagnetism MEMS micromirror
CN209766860U (en) * 2019-05-10 2019-12-10 苏州长光华芯半导体激光创新研究院有限公司 VCSEL single luminous point light source system based on MEMS micro-mirror scanning

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