CN109964310A - 混合基板载具 - Google Patents

混合基板载具 Download PDF

Info

Publication number
CN109964310A
CN109964310A CN201780071345.8A CN201780071345A CN109964310A CN 109964310 A CN109964310 A CN 109964310A CN 201780071345 A CN201780071345 A CN 201780071345A CN 109964310 A CN109964310 A CN 109964310A
Authority
CN
China
Prior art keywords
load
carrying ring
loading plate
board carrier
base board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780071345.8A
Other languages
English (en)
Other versions
CN109964310B (zh
Inventor
S·斯如纳乌卡拉苏
S·瓦亚布朗
A·马哈德夫
S·卡莉亚纳桑达兰
E·S·白
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN109964310A publication Critical patent/CN109964310A/zh
Application granted granted Critical
Publication of CN109964310B publication Critical patent/CN109964310B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Packaging Frangible Articles (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)

Abstract

本文提供混合基板载具的实施例。在一些实施例中，基板载具包括：承载环，具有与承载环的中心开口相邻的内部壁架；和承载板，具有比中心开口更大的直径，并且被配置成搁置在内部壁架上，其中承载板包括设置于支撑表面下方的电极，以将基板静电夹持至承载板的支撑表面。

Description

混合基板载具
技术领域
本公开文本的实施例总的来说涉及半导体基板处理系统。
背景技术
集成电路生产在数年内已从200mm的基板或晶片迁移至300mm的基板或晶片。这样允许在单个晶片上产生高达2.5倍的更多的晶片，并可使得芯片制造者降低生产现今的信息时代应用所需的不断变强的半导体的成本。然而，发明人相信并非所有的半导体都将永远在300mm晶片上生产。尽管芯片生产力过渡至300mm的晶片，但是发明人相信在不久的将来200mm的晶片仍将不会消失。具体而言，发明人相信至少在有限的将来内可持续使用运行200mm晶片的制造厂以制造各种器件，例如专用存储器、图像传感器、显示驱动器、微控制器、模拟产品、和基于MEMS的设备。发明人进一步相信一些芯片制造者可能期望在300mm和200mm工具上分别运行300mm和200mm晶片的混合的芯片生产。
因此，发明人已提供用于在基板处理系统中使用的多尺寸的基板的基板载具的实施例。
发明内容
本文提供混合基板载具的实施例。在一些实施例中，基板载具包括：承载环，所述承载环具有与承载环的中心开口相邻的内部壁架；和承载板，所述承载板具有比中心开口要大的直径，并且被配置成搁置在内部壁架上，其中承载板包括设置于支撑表面下方的电极，所述电极用于将基板静电夹持至承载板的支撑表面。
在一些实施例中，一种基板载具，包括：承载环，所述承载环具有与承载环的中心开口相邻的内部壁架、外部壁架、和设置于内部壁架与外部壁架之间的基本上平面的上表面；和承载板，所述承载板具有比中心开口大的直径，并且被配置成搁置在内部壁架上，其中承载板包括电极，所述电极用于将基板静电夹持至所述承载板；其中当承载板设置于内部壁架上时，承载板的下表面与承载环的下表面基本上是共面的；并且其中承载板具有比承载环的厚度要小的厚度。在一些实施例中，承载板具有小于200mm的直径，并且在上表面和内部壁架的界面处的承载环的侧壁沿着直径设置，此直径大于200mm，以在200mm晶片(当所述200mm晶片设置于承载板上时)的边缘和侧壁之间界定间隙。
在一些实施例中，一种基板载具，包括：承载环，所述承载环具有与承载环的中心开口相邻的内部壁架、外部壁架、设置于内部壁架与外部壁架之间的基本上平面的上表面、和相对于上表面的基本上平面的下表面，其中内部壁架为阶梯状且具有内部部分，所述内部部分具有比内部壁架的外部部分要小的厚度；和承载板，所述承载板具有比中心开口要大的直径，并且被配置成搁置在内部壁架上，其中承载板包括下部部分，所述下部部分具有比中心开口要小的直径和径向延伸的突起，所述径向延伸的突起被配置成搁置在承载环的内部壁架的内部部分上，使得所述下部部分位于中心开口内，并且其中所述承载板包括电极，所述电极用于将基板静电夹持至承载板；其中当承载板设置于内部壁架上时，承载板的下表面与承载环的下表面基本上是共面的；并且其中承载板具有比承载环的厚度要小的厚度。
以下说明本公开文本的其他和进一步实施例。
附图简单说明
可通过参考附图中所描绘的说明性实施例来理解以上简述且于以下更详细讨论的本公开文本的实施例。然而，附图仅示出本公开文本的典型实施例，并且因此不应被认为是对范围的限制，因为本公开文本允许其他等效实施例。
图1为根据本公开文本的至少一些实施例的混合基板载具的等距视图。
图2为根据本公开文本的至少一些实施例的图1的混合基板载具的部分等距视图。
图3为根据本公开文本的至少一些实施例的图1的混合基板载具的部分等距视图，并且所述混合基板载具拥有设置在所述混合基板载具上的基板。
图4为根据本公开文本的至少一些实施例的用于基板载具的承载板的顶视图。
图5为根据本公开文本的至少一些实施例的承载环的顶视图。
图6为根据本公开文本的至少一些实施例的具有安装于承载环上的承载板的混合基板载具的顶视图。
图7为根据本公开文本的至少一些实施例的混合基板载具的一部分的横截面侧视图。
图8为根据本公开文本的至少一些实施例的图7的混合基板载具的一部分的详细的横截面侧视图。
为了促进理解，已尽可能地使用相同的元件符号代表附图中共用的相同元件。附图并非按照比例绘制，并且可能为了清楚而被简化。一个实施例的元件和特征可有利地并入其他实施例中而无需进一步叙述。
具体实施方式
本文提供混合基板载具的实施例。本公开文本的实施例有益地使得200mm晶片能够以少量或无须硬件修改的方式来运行，同时维持在300mm平台和工艺腔室上的工艺透明度和稳定的缺陷性能。此外，本公开文本的实施例有益地允许在现有可取得的300mm工具上增加200mm晶片生产的生产力并且毫不费力地切换回300mm晶片生产的灵活性。此外，混合基板载具可重复使用，并且被设计成避免晶片级电弧。
混合桥接载具的实施例被设计成静电夹持200mm并在300mm平台中无缝传送横跨处理腔室。因此，不会招致从300mm切换成200mm晶片的生产的停机时间。混合桥接载具的实施例为工艺透明的，并且在与微电子器件生产中的大多数300mm多腔室系统相兼容。此外，本公开文本的实施例有益地提供显著的成本节省以及用于在使得能够于300mm平台和工艺腔室上生产200mm晶片的过程中的基板操纵者转换的最小的生产调度停机时间。例如，混合桥接载具的实施例与300mm多腔室系统(例如物理气相沉积(PVD)腔室、化学气相沉积(CVD)腔室、蚀刻腔室等等)相兼容。
图1为根据本公开文本的至少一些实施例的混合基板载具的等距视图。图2为图1的混合基板载具的部分等距视图，图2经放大以更清楚地示出混合基板载具。图3为图1的混合基板载具的部分等距视图，所述混合基板载具具有设置于所述混合基板载具上的基板。如图1至图3中所示，混合基板载具(例如，基板载具100)包括承载环102和被配置成搁置于承载环102内的承载板104。
在一些实施例中，承载环102包括外部壁架(outer ledge)106，所述外部壁架106沿着承载环102的外周边缘设置。外部壁架106可有益地促进对承载环102(和基板载具100作为一整体)的操纵(例如，储存和/或移动)。因此，外部壁架被配置为通过基板操纵装备(诸如300mm基板操纵装备)来操纵。在一些实施例中，外部壁架106不具有穿过所述外部壁架106而形成的开口或基本上不具有穿过所述外部壁架106而形成的开口。承载环102包括沿着承载环102的内周边缘设置的内部壁架108。在一些实施例中，内部壁架108不具有穿过所述内部壁架108而形成的开口或基本上不具有穿过所述内部壁架108而形成的开口。设置于外部壁架106与内部壁架108之间的承载环102的上表面110突出到外部壁架106和内部壁架108各自的上表面的上方。在一些实施例中，上表面110基本上是平面的。在一些实施例中，承载环102的主体不具有穿过所述承载环102的主体而形成的开口或基本上不具有穿过所述承载环102的主体而形成的开口。承载环可由石英制成。可分离的承载环102有益地可易于与承载板104分开清洁。
图5为根据本公开文本的至少一些实施例的承载环的顶视图。图5描绘了承载环102的顶视图，示出了外部壁架106、上表面110和内部壁架108围绕承载环102的中心开口502。如图5中所描绘，承载环102可不具有穿过承载环102的主体而形成的孔或开口。
返回到图1至图3，承载板104的尺寸被设计和配置为使得承载板104的外周边缘搁置在承载板104的内部壁架108的至少一部分上，以填充和/或覆盖承载环102的中心开口(例如，图5中的502)。承载板104无须机械耦接至承载环102。因此，在一些实施例中，并不提供用于将承载板104耦接至承载环102的螺钉、夹具、螺丝、粘合剂、接合、焊接等。承载板104包括基本上平面的基板支撑表面112，用于在所述基板支撑表面112上支撑基板。例如，图3描绘了设置于承载板104的顶部上的基板302。基板载具100可有益地被配置成将较小的基板(例如200mm晶片)支撑在承载板104的顶部上且在承载环102的上表面110的径向内侧。
承载板104可以由高导热材料(例如，氮化铝AlN或碳化硅SiC)制得，以维持从下方基板支撑件通过承载板104到设置在所述承载板104上的基板的强的导热性。进一步有益地，高导热材料(例如，氮化铝AlN或碳化硅SiC)能够在大多数晶片处理腔室中承受高温应用。
承载板进一步具有静电夹持能力，用于极佳地结合晶圆以及与下方基板支撑件的热传输的往来。例如，承载板104包括电极，诸如嵌入式电极，所述电极适合用于将基板静电夹持至承载板104。如图4中所示的承载板的顶视图所描绘，承载板104可以包括电极402。在一些实施例中并且如图所示，电极402可以包括第一电极406和第二电极408。例如，第一电极406和第二电极408可为半月形或半圆形电极。其他电极的配置也适合。
静电夹持能力有益地提供基板极佳地结合至承载板104，且增强安装于承载板104上的基板与基板载具(在所述基板载具上设置有基板支撑件)之间的传热。电极402(或第一电极406和第二电极408)可被充电或放电，以分别在充电站/放电站(未显示)处从承载板104夹持或释放基板。
图6为根据本公开文本的至少一些实施例的混合基板载具(例如，基板载具100)的顶视图，所述混合基板载具拥有安装在承载环(例如，承载环102)上的承载板(例如，承载板104)。如图6中所示，承载板104的外直径小于界面的内直径，此界面介于承载环102的上表面110与承载环102的内部壁架108之间。
图7为根据本公开文本的至少一些实施例的混合基板载具的部分横截面侧视图。如图7中所示，在一些实施例中，承载环102具有平行于上表面110的下表面702，使得承载环102的整体轮廓为基本上平坦或平面的(排除了外部壁架106和内部壁架108)。在一些实施例中，基本上平面的下表面702从承载环102的外直径延伸至内直径，使得外部壁架106和内部壁架108通过承载环102减少的厚度来界定，使得外部壁架106和内部壁架108的上表面不与上表面110共面。
图8为根据本公开文本的至少一些实施例的图7的混合基板载具的部分横截面侧视图的细节。如图8中更清楚所示，承载环102被配置成在承载环102的内部壁架108上支撑承载板104。在一些实施例中，承载板104的下表面704可基本上与承载环102的下表面702共面。在一些实施例中，内部壁架108具有厚度，使得设置在承载板上的基板(诸如，标准晶片，例如，200mm晶片)(例如，基板302)的上表面与上表面110共面或基本上共面。例如，承载环102的厚度822大于承载板104的厚度824。在一些实施例中，厚度822以基本上等于待支撑的基板302的厚度的量而大于厚度824，使得承载板104和基板302的组合的厚度826基本上等于承载环102的厚度822。
在一些实施例中，承载环102的内部壁架108的内边缘(例如，在介于上表面110与内部壁架108之间的界面处的侧壁802)的直径大于设置在承载板104上的基板的直径。例如，承载板104的上表面、内部壁架108和侧壁802界定袋，在使用期间基板可设置于此袋中。在承载板104被设计成支撑200mm晶片的实施例中，承载板104可具有比基板稍微小的直径，以提供悬垂部(overhang)804。在一些实施例中，悬垂部804可为约1mm(例如，承载板104可具有约198mm的直径)。侧壁802可沿着比待支撑的基板要大的直径来设置，以在侧壁802与基板的边缘之间界定径向间隙806。在一些实施例中，径向间隙806可为约2.5mm。
承载板104的支撑表面112设置于内部壁架108上方，以在支撑表面的平面(例如，和基板的悬垂部的底表面(当存在时))与内部壁架108的上表面的平面之间界定间隙808。
在一些实施例中，内部壁架108可为阶梯状，例如，内部壁架108具有内部部分厚度810，所述内部部分810具有比外部部分812要小的厚度。在这样的实施例中，承载板104可包括相对应的径向延伸突起814，所述径向延伸突起814被配置成搁置在内部部分810上。在这样的实施例中，承载板104具有直径比中心开口(例如，图5中的502)要小的下部部分，使得承载板104座落于中心开口内，并且径向延伸突起814搁置在内部壁架108的内部部分810上。间隙816设置在径向延伸突起814下方的承载板104的侧壁与和中心开口502相邻的内部壁架108的侧壁之间。在一些实施例中，内部壁架108的外部部分812具有比径向延伸突起814要大的直径，以在径向延伸突起814的最外部直径与内部壁架108的阶梯之间界定间隙818。在一些实施例中，径向延伸突起814具有比在阶梯处的内部壁架108的厚度减少量要大的厚度820，使得支撑表面112的平面相对于内部壁架108的外部部分812的上表面而提升，以提供以上所讨论的间隙808。
尽管以上内容针对本公开文本的实施例，但可在不脱离本公开文本的基本范围的情况下设计出本公开文本的其他和进一步实施例。

Claims (15)

1.一种基板载具，包括：
承载环，所述承载环具有与所述承载环的中心开口相邻的内部壁架；和
承载板，所述承载板具有比中心开口要大的直径，并且所述承载板被配置成搁置在所述内部壁架上，其中所述承载板包括电极，所述电极设置在支撑表面下方以用于将基板静电夹持至所述承载板的所述支撑表面。
2.如权利要求1所述的基板载具，进一步包括：
外部壁架，所述外部壁架沿着所述承载环的外周边缘设置。
3.如权利要求1所述的基板载具，进一步包括：
所述承载环的上表面，所述承载环的所述上表面被设置成在所述内部壁架的径向外侧，其特征在于，所述承载环的所述上表面突出到所述内部壁架的上表面的上方。
4.如权利要求1所述的基板载具，其特征在于，所述承载环和所述承载板不耦接在一起。
5.如权利要求1所述的基板载具，其特征在于以下中的至少一个：
所述承载环由石英制成；或
其中所述承载板由高导热材料制得。
6.如权利要求1所述的基板载具，其特征在于，所述承载板由高导热材料制得，并且其中所述高导热材料为氮化铝或碳化硅。
7.如权利要求1至6中任一项所述的基板载具，其特征在于，所述承载环被配置成由300mm基板操纵装备来操纵，并且所述承载板被配置成在所述承载环的上表面的径向内侧支撑具有小于300mm的直径的基板。
8.如权利要求7所述的基板载具，其特征在于，所述承载板被配置成支撑具有约200mm的直径的基板。
9.如权利要求1至6中任一项所述的基板载具，其特征在于，所述电极包括第一电极和第二电极。
10.如权利要求9所述的基板载具，其特征在于，所述第一电极和所述第二电极为半月形或半圆形的电极。
11.如权利要求1至6中任一项所述的基板载具，其特征在于，所述承载板的外直径比界面的内直径要小，所述界面在所述承载环的上表面与所述承载环的所述内部壁架之间。
12.如权利要求1至6中任一项所述的基板载具，其特征在于，所述承载环包括下表面，所述下表面与所述承载环的上表面相平行，使得所述承载环是基本上平坦的。
13.如权利要求12所述的基板载具，进一步包括：外部壁架，所述外部壁架沿着所述承载环的外周边缘设置，其中所述下表面从所述承载环的所述外直径延伸至所述内直径，使得所述外部壁架和所述内部壁架由所述承载环的减少的厚度来界定，并且使得所述外部壁架和所述内部壁架的上表面不与所述上表面共面。
14.如权利要求1至6中任一项所述的基板载具，其特征在于，所述承载板的厚度小于所述承载环的厚度。
15.如权利要求14所述的基板载具，其特征在于，所述承载环的所述厚度比所述承载板的所述厚度要大与待支撑的基板的厚度基本上相等的量，使得所述承载板和待支撑的所述基板的组合的厚度基本上等于所述承载环的所述厚度。
CN201780071345.8A 2016-11-18 2017-11-17 混合基板载具 Active CN109964310B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662424159P 2016-11-18 2016-11-18
US62/424,159 2016-11-18
US15/815,673 2017-11-16
US15/815,673 US10777442B2 (en) 2016-11-18 2017-11-16 Hybrid substrate carrier
PCT/US2017/062248 WO2018094182A1 (en) 2016-11-18 2017-11-17 Hybrid substrate carrier

Publications (2)

Publication Number Publication Date
CN109964310A true CN109964310A (zh) 2019-07-02
CN109964310B CN109964310B (zh) 2023-06-23

Family

ID=62146707

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780071345.8A Active CN109964310B (zh) 2016-11-18 2017-11-17 混合基板载具

Country Status (4)

Country Link
US (1) US10777442B2 (zh)
CN (1) CN109964310B (zh)
TW (1) TWI774706B (zh)
WO (1) WO2018094182A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7245071B2 (ja) * 2019-02-21 2023-03-23 株式会社ジェイテクトサーモシステム 基板支持装置
US10916464B1 (en) * 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2014500A (en) * 1977-12-01 1979-08-30 Dobson C D Improvements relating to apparatus for use with vacuum chambers
TW426873B (en) * 1997-05-16 2001-03-21 Applied Materials Inc Magnetically-levitated rotor system for an RTP chamber
CA2364995A1 (en) * 2000-12-21 2002-06-21 Oxford Instruments Plasma Technology Limited Substrate loading apparatus
US20080220622A1 (en) * 2007-03-09 2008-09-11 Daniel Goodman Substrate processing pallet with cooling
US20130001899A1 (en) * 2011-07-01 2013-01-03 Applied Materials, Inc. Electrostatic chuck assembly
US20140020629A1 (en) * 2012-07-17 2014-01-23 Applied Materials, Inc. Two piece shutter disk assembly for a substrate process chamber
US20140361197A1 (en) * 2012-06-12 2014-12-11 Axcelis Technologies, Inc. Workpiece carrier
US20150000055A1 (en) * 2013-06-28 2015-01-01 Ebara Corporation Substrate processing apparatus
CN104637858A (zh) * 2013-11-08 2015-05-20 盛美半导体设备（上海）有限公司 工件加工装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5986874A (en) * 1997-06-03 1999-11-16 Watkins-Johnson Company Electrostatic support assembly having an integral ion focus ring
JP2001522142A (ja) * 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US6276998B1 (en) * 1999-02-25 2001-08-21 Applied Materials, Inc. Padless substrate carrier
CN100433286C (zh) * 2003-07-08 2008-11-12 株式会社未来视野 基片载置台用静电吸盘及其电极以及处理系统
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20080062609A1 (en) * 2006-08-10 2008-03-13 Shinji Himori Electrostatic chuck device
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US9410249B2 (en) * 2014-05-15 2016-08-09 Infineon Technologies Ag Wafer releasing
GB201419210D0 (en) * 2014-10-29 2014-12-10 Spts Technologies Ltd Clamp assembly
JP6385915B2 (ja) * 2015-12-22 2018-09-05 東京エレクトロン株式会社 エッチング方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2014500A (en) * 1977-12-01 1979-08-30 Dobson C D Improvements relating to apparatus for use with vacuum chambers
TW426873B (en) * 1997-05-16 2001-03-21 Applied Materials Inc Magnetically-levitated rotor system for an RTP chamber
CA2364995A1 (en) * 2000-12-21 2002-06-21 Oxford Instruments Plasma Technology Limited Substrate loading apparatus
US20080220622A1 (en) * 2007-03-09 2008-09-11 Daniel Goodman Substrate processing pallet with cooling
US20130001899A1 (en) * 2011-07-01 2013-01-03 Applied Materials, Inc. Electrostatic chuck assembly
US20140361197A1 (en) * 2012-06-12 2014-12-11 Axcelis Technologies, Inc. Workpiece carrier
US20140020629A1 (en) * 2012-07-17 2014-01-23 Applied Materials, Inc. Two piece shutter disk assembly for a substrate process chamber
US20150000055A1 (en) * 2013-06-28 2015-01-01 Ebara Corporation Substrate processing apparatus
CN104637858A (zh) * 2013-11-08 2015-05-20 盛美半导体设备（上海）有限公司 工件加工装置

Also Published As

Publication number Publication date
US20180144969A1 (en) 2018-05-24
TW201830551A (zh) 2018-08-16
CN109964310B (zh) 2023-06-23
WO2018094182A1 (en) 2018-05-24
US10777442B2 (en) 2020-09-15
TWI774706B (zh) 2022-08-21

Similar Documents

Publication Publication Date Title
KR20230023702A (ko) 착탈형 기판 트레이 및 어셈블리 그리고 이를 포함하는 반응기
KR101831665B1 (ko) 금속 본딩된 보호 층을 갖는 기판 지지 조립체
US10236201B2 (en) Wafer carrier for smaller wafers and wafer pieces
WO2014113244A1 (en) Temperature management of aluminium nitride electrostatic chuck
JP2018078284A5 (zh)
CN110690096B (zh) 静电吸盘、等离子体处理设备以及制造半导体装置的方法
US10790121B2 (en) Plasma density control on substrate edge
CN109346395A (zh) 具有低摩擦垫的物理气相沉积(pvd)靶材
KR102650990B1 (ko) 기판의 능동적/수동적 본딩 및 디-본딩을 위한 기판 캐리어
CN109964310A (zh) 混合基板载具
US20190259647A1 (en) Deposition ring for processing reduced size substrates
CN111524784B (zh) 等离子体设备和半导体器件的制备方法
TW202125573A (zh) 具有嵌入式螺帽的噴淋頭
TW201230889A (en) Plasma processing apparatus (2)
CN108538744B (zh) 卡盘装置以及半导体加工设备
US20190259635A1 (en) Process kit for processing reduced sized substrates
KR101463395B1 (ko) 정전척 및 그 제조방법
CN107768299A (zh) 承载装置及半导体加工设备
KR101583767B1 (ko) 히터가 장착된 캡형 정전척 및 그 제조방법
KR101574779B1 (ko) 히터가 장착된 캡형 정전척 및 그 제조방법
KR102673210B1 (ko) 탄화규소 증착 장치
US20220415691A1 (en) Workpiece holding tool
US20070181420A1 (en) Wafer stage having an encapsulated central pedestal plate
CN108461441B (zh) 承载装置及工艺腔室
JP2006049359A (ja) ウェハボート

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant