CN109962158A - A kind of production method of small-size magnetic random access memory - Google Patents
A kind of production method of small-size magnetic random access memory Download PDFInfo
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- CN109962158A CN109962158A CN201711404429.7A CN201711404429A CN109962158A CN 109962158 A CN109962158 A CN 109962158A CN 201711404429 A CN201711404429 A CN 201711404429A CN 109962158 A CN109962158 A CN 109962158A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 17
- 238000010586 diagram Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
The invention discloses a kind of production methods of small-size magnetic random access memory, are first sequentially depositing mtj stack, metal hard mask layer and sacrificial layer on substrate；Then from top to bottom gradually intilted opening is etched on sacrificial layer, opening is from the top of sacrificial layer until metal mask layer, the width of bottom is the characteristic size of the default MTJ cell to be made, the second hard mask layer is filled in the opening, and the second hard mask layer and sacrificial layer are performed etching to scheduled height by the second hard mask layer of chemically mechanical polishing and sacrificial layer, the round and smooth processing in angle is done simultaneously, the second hard mask layer cylindrical body is etched, and removes sacrificial layer, makes dot pattern；Finally metal mask layer is performed etching using the second hard mask layer as exposure mask, then using metal hard mask layer as top electrode, MTJ is performed etching, is completed the production.The production that can be achieved with small size dot pattern in method of the invention using general litho machine, reduces production cost.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors more particularly to a kind of production sides of small-size magnetic random access memory
Method.
Background technique
MRAM (Magnetic Random Access Memory) is a kind of non-volatile magnetic RAM.It
Possess Static RAM (SRAM) high speed read write capability, the high integration of dynamic RAM (DRAM) and
Power consumption is lower than DRAM from far away, relative to flash memory (Flash), with using the increase performance of time not move back
Change.Due to the features described above that MRAM has, it is referred to as general-purpose storage (universal memory), is believed to replace
SRAM, DRAM, EEPROM and Flash.
Different from traditional random access memory chip manufacturing technology, the data in MRAM are not the shapes with charge or electric current
Formula storage, but a kind of magnetic state stores, and is incuded by measurement resistance, will not interfere magnetic state.MRAM is used
Magnetic tunnel-junction (MTJ) structure carries out data storage, and in general, mram cell is by transistor (1T) and a magnetic tunnel
Road knot (MTJ) collectively constitutes a storage unit, and the magnetic tunnel-junction (MTJ) structure includes at least two electromagnetic layers and use
In the insulating layer of isolation two electromagnetic layers.One of electromagnetic layer is fixed magnetic layer, will through strength fixed field
Electrode is fixed on specific direction.And another electromagnetic layer is magnetosphere free to rotate, and electrode is remained at a side.
In the production of magnetic RAM, conventional lithography figure makes small ruler due to the limitation of photoresist and technique
Very little hole pattern difficulty is more much lower than production dot pattern difficulty.For dot pattern, excessively small and high photoresist is easy to
It collapses, stacks or adhesion strength is inadequate.Traditional scheme needs to photoetching small size MTJ (such as 60nm or less) patterning process
Machine is more demanding (such as immersion lithography machine), and general litho machine (193nm or more) and the limitation of photoresist pattern make it difficult to do
60nm MTJ dot matrix figure below out.
Summary of the invention
The object of the present invention is to provide a kind of production methods of small-size magnetic random access memory, for solving the prior art
The technical issues of not being available general litho machine production dot pattern, provides a kind of low cost solution, photoetching is utilized
The easy feature of the boring ratio dot pattern of same size, first carries out the production in hole, is then converted into dot pattern, makes small size
MTJ graphic scheme.
To achieve the goals above, technical solution of the present invention is as follows:
A kind of production method of small-size magnetic random access memory, the production side of the small-size magnetic random access memory
Method, comprising:
It is sequentially depositing mtj stack, metal hard mask layer and sacrificial layer on substrate；
From top to bottom gradually intilted opening is etched on sacrificial layer, opening is from the top of sacrificial layer until metal is covered
Film layer, the width of bottom are the characteristic size of the default MTJ cell to be made；
Fill the second hard mask layer in the opening, and by the second hard mask layer of chemically mechanical polishing and sacrificial layer to making a reservation for
Height；
Second hard mask layer and sacrificial layer are performed etching, while doing the round and smooth processing in angle, etches the second hard mask layer circle
Cylinder, and remove sacrificial layer；
Metal mask layer is performed etching using the second hard mask layer as exposure mask, then using metal hard mask layer as powering on
Pole performs etching MTJ, completes the production.
Further, the sacrificial layer is oxide.
Further, the sacrificial layer is silica.
Further, the material of second hard mask layer uses the material high relative to silica etching selection ratio.
Further, the material of second hard mask layer uses SIN.
Preferably, described by chemically-mechanicapolish polishing the second hard mask layer and sacrificial layer to scheduled height, wherein making a reservation for
Height between 500A to 3000A.
Preferably, described that second hard mask layer and sacrificial layer are performed etching, wherein the second hard mask layer and sacrificial layer
The ratio between etch rate is 1/5 to 1/15.
Preferably, the tilt angle of the opening is 4-10 degree.
The production method of a kind of small-size magnetic random access memory proposed by the present invention, by being arranged on metal mask layer
Sacrificial layer fills the second hard mask layer in sacrificial layer upper opening, then etches the second hard exposure mask cylindrical body, form dot chart
Shape.The production that can be achieved with small size dot pattern in this method using general litho machine, reduces production cost.
Detailed description of the invention
Fig. 1 is a kind of production method flow chart of small-size magnetic random access memory of the present invention；
Fig. 2 is the schematic diagram of substrate structure that the embodiment of the present invention is used for subsequent production；
Fig. 3 is sacrificial layer of embodiment of the present invention hatch frame schematic diagram；
Fig. 4 is opening of the embodiment of the present invention the second hard mask layer of filling and polishes structural schematic diagram；
Fig. 5 is structural schematic diagram in the second hard mask layer of embodiment of the present invention cylindrical body etching process；
Fig. 6 is the second hard mask layer of embodiment of the present invention cylindrical body etching structure schematic diagram；
Fig. 7 is metal mask layer of embodiment of the present invention etching structure schematic diagram；
Fig. 8 is MTJ of embodiment of the present invention etching structure schematic diagram.
Specific embodiment
Technical solution of the present invention is described in further details with reference to the accompanying drawings and examples, following embodiment is not constituted
Limitation of the invention.
The production method for present embodiments providing a kind of small-size magnetic random access memory, for making small size dot chart
Shape process, the present embodiment are illustrated for making MRAM.As shown in Figure 1, a kind of system of small-size magnetic random access memory
Make method, comprising:
Step S1, it is sequentially depositing mtj stack, metal hard mask layer and sacrificial layer on substrate.
In the production of magnetic RAM, substrate is semiconductor substrate, and the substrate of magnetic RAM can be
The materials such as metal, glass, silicon or metal alloy, silicon are integrated circuit (although magnetic sensor is not total since its is easy to process
It is to need this circuit) become best selection.It is sequentially depositing mtj stack, metal hard mask layer and sacrificial layer, shape on substrate
At the substrate for subsequent production.It is sequentially depositing mtj stack, metal hard mask layer and sacrificial layer, what is be all made of is conventional skill
Art, which is not described herein again.It is simple in order to illustrate, in the diagram of the present embodiment, substrate is omitted, as shown in Figure 2.
The present embodiment sacrificial layer is mainly oxide oxide, can be dielectric material common in this field, such as SiO2
Or other oxides etc., or the common material that can be etched such as SIN.In the present embodiment as conceivable MTJ having a size of
40nm, the thickness of sacrificial layer are about 2000A~2500A.
In the present embodiment, metal hard mask layer Ta can also use other materials, including Ru, TaN, Ti, TiN etc.,
General 500~the 800A of thickness, metal hard mask layer are the intermediate resistances contacted as lower electrode with upper layer metal throuth hole (Cu VIA)
Barrier.
Step S2, from top to bottom gradually intilted opening is etched on sacrificial layer, is open straight from the top of sacrificial layer
To metal mask layer, the width of bottom is the characteristic size of the default MTJ cell to be made.
It is covered as shown in figure 3, the etching for carrying out certain tilt angle (4~10 degree) in sacrificial layer forms opening to metallic hard
Film layer.The top of the opening is wider, and bottom is narrow, and tilt angle is 4~10 degree.It opens to metal hard mask the bottom of opening
Layer, the width of bottom is the width for the MTJ cell that will be made, such as wants the MTJ cell of production 40nm small size, the opening
Bottom width be 40nm.In addition, the thickness of sacrificial layer can according to need to deposit, thickness is thicker, the open-mouth ruler of upper part
It is very little can be bigger.
In production, mask pattern is made by litho machine, since the upper dimension of the present embodiment sacrificial layer opening is larger,
Mask pattern can be made using general litho machine (193nm or more).Then opening is formed by etching.It is readily appreciated that
, the size for the MTJ cell that the method for the technical program makes as needed designs the thickness of corresponding sacrificial layer, can be with
The size of upper opening portion is enabled to pass through general litho machine to make mask pattern.In general it is less than 60nm's to make
MTJ cell, the width of the bottom are less than 60nm, and the width of the open top is greater than 80nm, to use general photoetching
Machine carries out photoetching, reduces manufacturing cost.
For example, conceivable MTJ only need to expose the hole of 80nm with litho machine having a size of 40nm, and make sacrificial oxide layer
Etching angle is maintained at 4~6 degree, and the oxidated layer thickness after CMP is maintained at 2KA or so.Wherein the etching angle of oxide layer can
It is made of gas with various, component, flow, power, air pressure etc. adjusts decision together.
Step S3, the second hard mask layer is filled in the opening, and passes through the second hard mask layer of chemically mechanical polishing and sacrifice
Layer arrives scheduled height.
This step carries out the second hard mask layer filling to the opening of formation, and the material of the second hard mask layer generallys use nitridation
Silicon SIN or SiNx, other materials high relative to silica etching selection ratio such as AlOx.After filling, pass through chemical machinery
Polish CMP method, the second hard mask layer of removal top extra sacrificial layer and filling.
As shown in figure 4, the MTJ cell of the present embodiment production 40nm, the height of the sacrificial layer of reservation and the second hard mask layer
Reaching preset height is 2KA, and the width dimensions on the second hard mask layer top are about 80nm.
It is easily understood that getting rid of extra part by chemically-mechanicapolish polishing CMP method, it is possible to reduce subsequent step
Etching workload, and guarantee that oxide layer is exposed.Preferably, the height of the sacrificial layer of reservation and the second hard mask layer reaches default
Altitude range be 500A~3000A.
Step S4, the second hard mask layer and sacrificial layer are performed etching, while does the round and smooth processing in angle, etched second and cover firmly
Film layer cylindrical body, and remove sacrificial layer.
This step is according to the different etching rate of the second hard mask layer and sacrificial layer, to the second hard mask layer and sacrificial layer
It performs etching, in general the second hard mask layer etches slow, and the ratio of outside sacrificial layer etching is very fast.The present embodiment second
The ratio between etch rate of hard mask layer and sacrificial layer is 1/5 to 1/15, gradually etches into the second hard exposure mask for wanting reservation in this way
Layer cylinder height.While etching sacrificial layer, the second hard mask layer is done into the round and smooth processing in angle, to justify by dry etching
The chamfering of cylinder upper end is round and smooth, makes upper dimension with lower portion size closer to better.
As shown in Figure 5, Figure 6, this step gradually performs etching the second hard mask layer and sacrificial layer, with the second hard exposure mask
The height of layer cylindrical body gradually decreases, and the size of the upper end moves closer to the size of bottom, and the size 45nm on top has been to the end
Size 40nm through very close bottom forms approximate second hard mask layer cylindrical body.
After removing sacrificial layer, the second hard mask layer cylindrical body forms dot pattern on metal hard mask layer.Hold
It is readily appreciated that, although showing only one or several MTJ columns in figure, the method can be used on chip with array shape
Formula manufactures many devices.
Step S5, metal mask layer is performed etching using the second hard mask layer as exposure mask, then with metal hard mask layer
As top electrode, MTJ is performed etching, is completed the production.
After forming dot pattern on metal hard mask layer, as shown in fig. 7, using the second hard mask layer as exposure mask to metal
Mask layer performs etching.Then using metal hard mask layer as top electrode, MTJ is performed etching, as shown in figure 8, completing the production.
After MTJ completes, other processing steps are executed by traditional process, are deposited to complete magnetic random
The manufacture of reservoir, which is not described herein again.Meanwhile photoetching employed in the present embodiment technical solution, etching, deposition, CMP etc. make
Make technique, has had a large amount of optional technical solution in the prior art, also repeated no more here.
The above embodiments are merely illustrative of the technical solutions of the present invention rather than is limited, without departing substantially from essence of the invention
In the case where mind and its essence, those skilled in the art make various corresponding changes and change in accordance with the present invention
Shape, but these corresponding changes and modifications all should fall within the scope of protection of the appended claims of the present invention.
Claims (8)
1. a kind of production method of small-size magnetic random access memory, which is characterized in that the small-size magnetic random access memory
Production method, comprising:
It is sequentially depositing mtj stack, metal hard mask layer and sacrificial layer on substrate；
From top to bottom gradually intilted opening is etched on sacrificial layer, opening is from the top of sacrificial layer until metal mask
Layer, the width of bottom are the characteristic size of the default MTJ cell to be made；
The second hard mask layer is filled in the opening, and by chemically-mechanicapolish polishing the second hard mask layer and sacrificial layer to scheduled height
Degree；
Second hard mask layer and sacrificial layer are performed etching, while doing the round and smooth processing in angle, etches the second hard mask layer cylindrical body,
And remove sacrificial layer；
Metal mask layer is performed etching using the second hard mask layer as exposure mask, then using metal hard mask layer as top electrode,
MTJ is performed etching, is completed the production.
2. the production method of small-size magnetic random access memory as described in claim 1, which is characterized in that the sacrificial layer is
Oxide.
3. the production method of small-size magnetic random access memory as claimed in claim 2, which is characterized in that the sacrificial layer is
Silica.
4. the production method of small-size magnetic random access memory as claimed in claim 3, which is characterized in that described second covers firmly
The material of film layer uses the material high relative to silica etching selection ratio.
5. the production method of small-size magnetic random access memory as claimed in claim 4, which is characterized in that described second covers firmly
The material of film layer uses SIN.
6. the production method of small-size magnetic random access memory as described in claim 1, which is characterized in that described to pass through chemistry
The second hard mask layer and sacrificial layer are mechanically polished to scheduled height, wherein scheduled height is between 500A to 3000A.
7. the production method of small-size magnetic random access memory as described in claim 1, which is characterized in that described hard to second
Mask layer and sacrificial layer perform etching, wherein the ratio between etch rate of the second hard mask layer and sacrificial layer is 1/5 to 1/15.
8. the production method of small-size magnetic random access memory as described in claim 1, which is characterized in that the opening is inclined
Rake angle is 4-10 degree.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711404429.7A CN109962158A (en) | 2017-12-22 | 2017-12-22 | A kind of production method of small-size magnetic random access memory |
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| CN201711404429.7A CN109962158A (en) | 2017-12-22 | 2017-12-22 | A kind of production method of small-size magnetic random access memory |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110993499A (en) * | 2019-11-05 | 2020-04-10 | 北京北方华创微电子装备有限公司 | Etching method, air gap type dielectric layer and dynamic random access memory |
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| US20060091476A1 (en) * | 2004-10-29 | 2006-05-04 | Cay-Uwe Pinnow | Sub-lithographic structures, devices including such structures, and methods for producing the same |
| US20110089511A1 (en) * | 2007-02-12 | 2011-04-21 | Avalanche Technology, Inc. | Magnetic Random Access Memory (MRAM) Manufacturing Process for a Small Magnetic Tunnel Junction (MTJ) Design with a Low Programming Current Requirement |
| CN102956816A (en) * | 2011-08-17 | 2013-03-06 | 台湾积体电路制造股份有限公司 | Hole first hardmask definition |
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- 2017-12-22 CN CN201711404429.7A patent/CN109962158A/en active Pending
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|---|---|---|---|---|
| US20040002217A1 (en) * | 2002-06-27 | 2004-01-01 | Martin Mazur | Method of defining the dimensions of circuit elements by using spacer deposition techniques |
| US20040192060A1 (en) * | 2003-03-20 | 2004-09-30 | Maik Stegemann | Method for fabricating a semiconductor structure |
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| CN110993499A (en) * | 2019-11-05 | 2020-04-10 | 北京北方华创微电子装备有限公司 | Etching method, air gap type dielectric layer and dynamic random access memory |
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| US11948805B2 (en) | 2019-11-05 | 2024-04-02 | Beijing Naura Microelectronics Equipment Co., Ltd. | Etching method, air-gap dielectric layer, and dynamic random-access memory |
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Application publication date: 20190702 |