CN109952356A - Semiconductor bonding resin combination, Semiconductor bonding piece and the semiconductor device using it - Google Patents

Semiconductor bonding resin combination, Semiconductor bonding piece and the semiconductor device using it Download PDF

Info

Publication number
CN109952356A
CN109952356A CN201680090744.4A CN201680090744A CN109952356A CN 109952356 A CN109952356 A CN 109952356A CN 201680090744 A CN201680090744 A CN 201680090744A CN 109952356 A CN109952356 A CN 109952356A
Authority
CN
China
Prior art keywords
mentioned
acid
semiconductor
ingredient
resin combination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680090744.4A
Other languages
Chinese (zh)
Inventor
藤原正和
福川弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of CN109952356A publication Critical patent/CN109952356A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C08K2003/0806—Silver
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/002—Physical properties
    • C08K2201/005—Additives being defined by their particle size in general
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/011—Nanostructured additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/041—Carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00—Presence of inorganic and organic materials
    • C09J2400/10—Presence of inorganic materials
    • C09J2400/16—Metal
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/07—Polyamine or polyimide
    • H01L2924/07025—Polyimide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

The present invention relates to a kind of Semiconductor bonding resin combinations for having superior thermal conductivity and electric conductivity, being best suited for engaging between power semiconductor and element supporting member.Semiconductor bonding of the invention includes with resin combination: (A) main chain has bimaleimide resin, (B) curing agent, the packing material comprising electroconductive particle that (C) specific gravity is 1.1~5.0, the silver particles that (D) average particle diameter is 10~300nm of aliphatic alkyl.Also provide the Semiconductor bonding piece prepared using the Semiconductor bonding with resin combination and semiconductor is engaged with piece using the Semiconductor bonding and the semiconductor device that is formed.

Description

Semiconductor bonding resin combination, Semiconductor bonding piece and use its half Conductor device
Technical field
The present invention relates to a kind of Semiconductor bonding resin combination, Semiconductor bonding resin sheet and semiconductor dresses It sets.In more detail, relate to be formed that be best suited for semiconductor power element bonding with the slug type that substrate engages with the half of piece Conductor bonding resin combination, Semiconductor bonding resin sheet and semiconductor device.
Background technique
In recent years, the raising with people to environmental consciousness, power semiconductor device are not only only applied to general industry Purposes and electric power railway purposes, are also widely used in vehicle-mounted purposes.Especially because vehicle-mounted component is allowed what is be restricted In size, keep each component small and exquisite with it is light, the performance of automobile is directly related to, so power semiconductor element also shows ruler The trend of very little downsizing.
Such semiconductor device, such as welded in the chip of DBC (Direct Bonded Copper: registered trademark) substrate Power semiconductor element is installed via heat resistance high high kupper solder on pad.
However, the use with leaded harmful substance is restricted, unleaded requirement is more more and more intense.
Therefore, it as the unleaded grafting material of high heat resistance other than high kupper solder, has inquired into melting point temperature engagement below The joint method of the silver paste of the slug type of nanometer-level silver filler.The silver paste of slug type has high thermal conductivity, can effectively answer For using the engagement of the power semiconductor element of high current.
For example, proposing the joint method (reference for engaging semiconductor element and DBC substrate by porous metal film Patent document 1), or the silver paste of printing is subjected to prepared drying and the membranaceous silver paste that is formed is transferred to after semiconductor element and DBC The joint method (referenced patent document 2) that substrate is engaged.
Existing technical literature
Patent document
Patent document 1: No. 2013/0256894 specification of U.S. Patent Application Publication No..
Patent document 2: Japanese Unexamined Patent Application Publication 2014-503936 bulletin.
Summary of the invention
Problems to be solved by the invention
The present invention provides it is a kind of have superior thermal conductivity and electric conductivity can be applied to power semiconductor and member The slug type Semiconductor bonding piece of part supporting member engagement.Moreover, viscous present invention provides above-mentioned semiconductor can be formed Connect the Semiconductor bonding resin combination with piece and the semiconductor device using the Semiconductor bonding piece.
Means for solving the problems
Semiconductor bonding resin combination of the invention, wherein it includes: (A) main chain has the double of aliphatic alkyl Maleimide resin, (B) curing agent, the packing material comprising electroconductive particle that (C) specific gravity is 1.1~5.0, (D) are average Particle diameter is the silver particles of 10~300nm.
Moreover, Semiconductor bonding of the invention is the sheet comprising Semiconductor bonding resin combination of the invention with piece Formed body.
Moreover, semiconductor device of the invention is to be bonded on semiconductor element with piece via Semiconductor bonding of the invention On supporting member.
The effect of invention
Semiconductor bonding of the invention is a kind of to show the viscous of superior thermal conductivity and electric conductivity with resin combination Connect material.Moreover, Semiconductor bonding of the invention is to form it into sheet and applied after solvent dilution with resin combination When cloth is dry, it also can reduce particle precipitating, therefore, the bonding piece of agglutinating property can be obtained.
Semiconductor bonding of the invention is that one kind shows superior thermal conductivity and electric conductivity with piece, be can be used in half Conductor element or power semiconductor are bonded on supporting member.
In more detail, compared with the high kupper solder or slug type silver paste that will form leg, Semiconductor bonding piece is being pacified Leg is not generated when filling semiconductor element, therefore, can be realized the miniaturization of semiconductor device.
Semiconductor device of the invention, semiconductor element have superior thermal conductivity and electric conductivity and are bonded on supporting frame On, more efficiency and stable can operate.
Detailed description of the invention
Fig. 1 is the side view for indicating the semiconductor device of an embodiment.
Specific embodiment
The present invention relates to Semiconductor bonding resin combination, the Semiconductor bondings of the bonding piece for being capable of forming slug type With piece and semiconductor device.
As described above, Semiconductor bonding resin combination of the invention, wherein it includes: (A) main chain has aliphatic The bimaleimide resin of alkyl；(B) curing agent；(C) packing material comprising electroconductive particle that specific gravity is 1.1~5.0； (D) average particle diameter is the silver particles of 10~300nm.
(A) ingredient that the present invention uses is the bimaleimide resin that main chain has aliphatic alkyl, wherein connection two The main chain of a dimaleoyl imino is the aliphatic alkyl that there is carbon number to be 1 or more and the substance that constitutes.Herein, aliphatic hydrocarbon Base can be the free positions such as straight-chain, branched or ring-type.
In one embodiment, carbon number is 6 or more.Carbon number in other implementations is 12 or more.More into one Step, carbon number is 24 or more in other embodiments.
Moreover, the aliphatic alkyl and dimaleoyl imino Direct Bonding.
Because obtaining not only has excellent heat resistance, but also answers low containing above-mentioned dimaleoyl imino resin The good Semiconductor bonding resin combination of heat bonding intensity under power state after moisture absorption.
As above-mentioned (A) ingredient, the imide expanding bismaleimide that for example the following general formula (1) indicates can be enumerated Compound (A1).
(integer that n is 1~10 in general formula)
It as above-mentioned bismaleimide compound (A1), can enumerate, such as BMI-3000 (trade name, digital molecule Company (one モ レ キ ュ of デ ヅ グ Na, mono- Le ズ society) manufacture, molecular weight 3000), BMI-5000 (trade name, digital branch and subsidiaries (one モ レ キ ュ of デ ヅ グ Na, mono- Le ズ society) manufacture, molecular weight 5000) etc..
In one embodiment, above-mentioned bismaleimide compound (A1) is number after being converted by polystyrene Average molecular weight is below 500 or more 5000.In other embodiments, above-mentioned bismaleimide compound (A1) is through poly- After the conversion of styrene number, number-average molecular weight is below 1000 or more 3000.Number-average molecular weight is lower than 500, then causes heat resistance to have Reduced trend.Number-average molecular weight, which is higher than 5000, will lead to when manufacturing semiconductor device, and pre- zygosity has the tendency that reduction.
Moreover, can be enumerated as above-mentioned (A) ingredient, the bismaleimide compound that the following general formula (2) indicates (A2)。
Can be (in general formula, Q be 6 or more carbon number divalent straight-chain, branched or cricoid aliphatic alkyl, P is divalent Atom or organic group and be containing from O, CO, COO, CH2、C(CH3)2、C(CF3)2、S、S2, SO and SO2In select 2 Group more than at least one of atom or organic group of valence.The integer that m is 1~10.).
Herein, the carbon number of group represented by Q can be 6~44.The atom for the divalent that P is indicated, can enumerate O, S etc., P The organic group of the divalent of expression can enumerate CO, COO, CH2、C(CH3)2、C(CF3)2、S2、SO、SO2Deng or containing these Organic group more than at least one of atom or organic group.As the above-mentioned organic group containing atom or organic group Group, construction than that described above can enumerate alkyl, phenyl ring, cyclic hydrocarbon ring (Cyclo ring), urethane bond etc. with carbon number 1-3 Structure as P, can be group shown in following chemical formula in this case.
As above-mentioned bismaleimide compound (A2), BMI-1500 (trade name, digital branch and subsidiaries can be enumerated (mono- Le ズ society of デ ヅ グ ナ ー モ レ キ ュ), molecular weight 1500) etc..
Above-mentioned (A) ingredient is also possible to that two or more components matchings is cooperated to make either a kind of ingredient is used alone With.With the raising of the compounding ratio of (A) ingredient, the good Semiconductor bonding resin of heat adhesive strength after moisture absorption can be obtained Composition.It should be noted that the better substance of forming properties of engagement tabs can be obtained by cooperation (A1) ingredient.Pass through Cooperate (A2) components matching, the better substance of tracing ability can be obtained.
Moreover, Semiconductor bonding resin combination of the invention can in the two or more cooperations of cooperation (A) ingredient Above-mentioned bismaleimide compound (A1) and bismaleimide compound (A2) to be used cooperatively.
In one embodiment, bismaleimide compound (A1) and (A2) with the use of when, according to quality criteria, Mixing ratio (A1)/(A2) of bismaleimide compound is 5/95~30/70.When (A1) is 5 or more in aforementioned proportion, piece The mouldability of shape rises.(A1) below 30 when, pre- zygosity becomes good.That is, the ratio of (A1)/(A2) is above-mentioned When in range, sheet formability can be obtained and be easy and the pre- good Semiconductor bonding resin combination of zygosity.
(B) curing agent that the present invention uses is the polymerization catalyst used in free radical polymerization under normal conditions, It is not particularly limited.
In one embodiment, polymerization catalyst is peroxide.In other embodiments, peroxide is organic Peroxide.In more detail, in other embodiments, organic peroxide is produced from 120 DEG C DEG C or less heating By the substance of base.
As the organic peroxide of above-mentioned (B) ingredient, for example, t- butyl peroxy -2 ethyl hexanoic acid ester, peroxide can be enumerated Change benzoyl, t- butylperoxide, acetyl peroxide, methyl ethyl ketone peroxide, acyl peroxide, isopropyl peroxide Benzene etc..
As the curing agent of above-mentioned (B) ingredient, both can a kind of substance be used alone, being also possible to two kinds of substances cooperations makes With.
Moreover, from the aspect of hardenability and storage stability, relative to 100 mass parts of resin of (A) ingredient, (B) at The amount divided is 0.1~10 mass parts, is preferably set to 0.2~5 mass parts.
(C) packing material that the present invention uses is the substance comprising electroconductive particle that specific gravity is 1.1~5.0.As this Electroconductive particle, specific gravity are 1.1~4.0.
(C) specific gravity of packing material is in this range, because will lead to when preparing resin combination and fill out when sheetmolding etc. The sedimentation for filling material is reduced, it is possible to obtain the bonding piece that packing material is uniformly distributed in piece thickness direction.
(C) specific gravity of packing material is less than 1.1, then the containing ratio of conductive metal is too low, can not carry out sometimes adequately Sintering.(C) specific gravity of packing material is more than 5.0, then in coating, the packing material as (C) settles resin combination, is caused It is offset to downside too much, sufficient heat conductivity and conductivity can not be obtained sometimes.
In one embodiment, (C) packing material is the ball-type metal powder such as spherical aluminium powder.
In other embodiments, (C) packing material can be with spherical silicon dioxide powder, spherical alumina powder, The powder shapeds metal oxide such as spherical titanium dioxide powder is core, and the metal coated powder on its surface is covered by conductive metal End.
Further, in other embodiments, (C) packing material and is passed through using heat-resistant resin particle as core Conductive metal covers the metallic cover powder on its surface etc..
In the case of metallic cover powder, the containing ratio of the conductive metal of cladding is 10~60 mass %.Conductive metal Containing ratio within this range when, low-gravity can be obtained, and the packing material with good thermal conductivity rate and electric conductivity.
In one embodiment, the conductive gold metal of cladding is gold or silver.In other embodiments, (C) fills material It is silver-colored coating particles of 10~60 mass % to the silver-colored cladding of surface progress of spherical silicon dioxide that material, which is with silver-containing rate,.
Using gold or the spherical silicon dioxide of silver cladding under high occupied state, can obtain with good thermal conductivity rate and The Semiconductor bonding resin combination of electric conductivity.
Using with silver-containing rate is silver-colored coating particles of 10~60 mass % to the silver-colored cladding of surface progress of spherical silicon dioxide When, the Semiconductor bonding resin combination small with the linear expansion coefficient of semiconductor element difference can be obtained.
In the present invention, in one embodiment, as the partial size of (C) packing material, pass through laser diffraction and scattering formula grain The Volume average particle diameter D of sub- distribution analysis measurement50It is 1~10 μm.In other embodiments, by the way that (particle is most The width of major diameter/orthogonal with longest diameter) length-width ratio that defines is 1.0~1.2.
When using length-width ratio spherical particle within the above range, because the thickness direction formation in piece has good conductive Property network structure, cause heat conductivity and conductivity to rise.Further, length-width ratio, can be easily in above range The equably coating conducting metal on particle surface, accordingly, it is difficult to which disengaging and the tortoise for the conductive metal being coated occurs It splits.
In addition, above-mentioned (C) packing material does not include following (D) silver particles and (F) nano-sized carbon.
(D) silver particles used in the present invention are the particles that average particle diameter is 10~300nm.It is somebody's turn to do (D) silver particles Shape can be spherical, flakey, tabular, needle-shaped, rodlike etc., and any shape can be used, and be not particularly limited.For ball For particle other than shape particle, average particle diameter refers to bond length.
In addition, average particle diameter is will be random by transmission electron microscope (TEM) or scanning electron microscope (SEM) The particle diameter of 100 samples extracted is measured by arithmetic average and to be obtained.
Above-mentioned silver particles can be molecular weight by organic compound clad surface, the organic compound 20000 with Under using nitrogen, carbon, oxygen as the organic compound of constituent element, specifically, being organising containing functional groups such as carboxyl, amino Close object.By being covered with organic compound on surface, the agglutination of silver particles can be reduced, dispersibility is improved.
As the above-mentioned organic compound containing carboxyl used, organic carboxylic from molecular weight 110~20000 can be More than one the organic compound selected in acid.
It can enumerate, such as: caproic acid, enanthic acid, octanoic acid, n-nonanoic acid, capric acid, hendecanoic acid, dodecanoic acid, dodecanoic acid, ten Four alkanoic acids, arachic acid, behenic acid, 2 ethyl hexanoic acid, oleic acid, linoleic acid, linolenic acid, end dipropionic acid polyethylene oxide Equal carboxylic acids.In more detail, as above-mentioned organic compound, the carboxylic acid derivates of above-mentioned carboxylic acid also can be used.
Moreover, alkylamine etc. can be enumerated as the above-mentioned organic compound containing amino used.
Such as: butylamine, methoxyethyl amine, 2- ethoxy ethyl amine, hexylamine, octylame, 3- butoxy propyl amine, nonyl amine, 12 Alkylamine, hexadecylamine, octadecylamine, coco amine, beef tallow amine, hydroxide beef tallow amine, oleyl amine, lauryl amine, stearyl The primary amine such as amine, 3-aminopropyltriethoxysilane；The secondary amine such as two coco amines, dihydrogenated tallow amine, distearyl amine；Dodecane Base dimethyl amine, two (dodecyl) monomethyl amine, tetradecyldimethylamine, octadecyldimethylamine, cocoyl diformazan The tertiary amines such as base amine, dodecyl tetradecyldimethylamine, trioctylamine；It is also possible to naphthylenediamine, stearyl propylene diamine, eight methylene The diamines such as diamines, nonamethylene diamine, terminal diamine polyethylene oxide, three amine end polypropylene oxide, two amine end polypropylene oxide.
The molecular weight for coating the organic compound of silver particles is higher than 20000, will lead to organic compound and is difficult to from clipped wire The surface of son is detached from.Organic compound is difficult to be detached from from metallic surface, will lead to when bonding is sintered with piece, has above-mentioned A possibility that organic compound is remaining in solidfied material.It is remaining in the bonding piece of organic compound after sintering, it will lead to heat The phenomenon that conductibility, electric conductivity decline.Also, as the molecular weight of above-mentioned organic compound, preferably 50 or more.Molecule Amount is lower than 50, and the storage stability for sometimes resulting in silver particles is deteriorated.
Therefore, it is based on above-mentioned viewpoint, the molecular weight of the organic compound of clad surface should can ensure storage-stable Property in the range of preferably molecular weight as small as possible.
For the silver particles, silver particles and the mass ratio of cladding or the organic compound for dispersing the silver particles are preferred It is set as 90: 10~99.5: 0.5.
Organic compound is lower than 99.5: 0.5 relative to the mass ratio of silver particles, then silver particles are aggregated sometimes.
Organic compound is higher than 90: 10 relative to the mass ratio of silver particles, then above-mentioned organic compound has after firing A possibility that remaining in solidfied material, this result sometimes results in the phenomenon that electric conductivity declines.
In the present invention, in one embodiment, for the ratio of (C) ingredient He (D) ingredient, (C) ingredient and (D) When the total amount of ingredient is 100, the mass ratio of (C) ingredient and (D) ingredient is 10: 90~90: 10.In other embodiments, (C) mass ratio of ingredient and (D) ingredient is 50: 50~90: 10.
When relative to (C) ingredient, the content of (D) ingredient is very few, is difficult to ensure its high thermal conductivity sometimes.(D) ingredient Content is excessive, then sometimes because generating gap in solidfied material, heat conductivity and electric conductivity is caused to decline.
Therefore, the total amount of the silver particles of the packing material and (D) ingredient of above-mentioned (C) ingredient is total with resin combination is combined into 40~80 mass % of body.(C) total amount of ingredient and (D) ingredient is lower than 40 mass %, can not obtain heat conductivity sometimes, lead Electrically.(C) total amount of ingredient and (D) ingredient is more than 80 mass %, will not be functioned sometimes as resin combination.
Semiconductor bonding resin combination of the invention, the filling material comprising (C) ingredient with specific gravity range The silver particles of material and (D) ingredient with specified particle dia, therefore, the solvent of coating drying etc. is diluted on a carrier sheet In the case of, it can also reduce the sedimentation of particle.
In more detail, which can promote between the packing material of (C) ingredient and the silver particles of (D) ingredient Sintering therefore can show good heat conductivity and electric conductivity.
Semiconductor bonding of the invention includes above-mentioned (A)~(D) ingredient with resin combination, also may include following acts Other compositions out..
Semiconductor bonding of the invention uses resin combination that can also further add as the organic of (E) flux constituent Object.Above-mentioned flux constituent be the Fluxing activity of the oxidation film of supporting member engaged with removal with semiconductor element at Point.
As above-mentioned (E) flux constituent, can enumerate, such as carboxylic acids.As the carboxylic acids, aliphatic carboxylic can be Any one of acid, aromatic carboxylic acid.
As aliphatic carboxylic acid, malonic acid, methylmalonic acid, dimethyl malonic acid, ethyl malonic acid, allyl can be enumerated Propylmalonic acid, 2,2 '-thiodiglycolic acids, 3,3 '-thio-2 acids, 2,2 '-(ethylene two is thio) oxalic acid, 3,3 '-two is thio Dipropionic acid, 2- ethyl -2- hydroxybutyric acid, two thiodiethanol acid, diglycolic acid, acetylenedicarboxylic acid, maleic acid, malic acid, 2- Isopropylmolic acid, tartaric acid, itaconic acid, 1,3- acetone dicarboxylic acid, triamido formic acid, muconic acid, β-hydrogen muconic acid, amber Acid, methylsuccinic acid, dimethyl succinate, glutaric acid, α-ketoglutaric acid, 2- methylglutaric acid, 3- methylglutaric acid, 2,2- bis- Bis- (methylol) propionic acid of methylglutaric acid, 3,3- dimethylated pentanedioic acid, 2,2-, citric acid, adipic acid, 3- tert-butyl adipic acid, Pimelic acid, benzene oxalic acid, phenylacetic acid, nitrophenyl-acetic acid, phenoxy acetic acid, nitrophenoxyacetic acid, thiophenyl acetic acid, hydroxyl phenylacetic acid, Dihydroxyphenyl acetic acid, mandelic acid, hydroxymandelic acid, dihydroxy mandelic acid, 1,2,3,4- butane tetracarboxylic acid, suberic acid, 4,4 '-two Thio two butyric acid, cinnamic acid, nitrocinnamic, hydroxycinnamic acid, dihydroxycinnamic acid, coumaric acid, phenylpyruvic acid, hydroxy phenyl Pyruvic acid, caffeic acid, high phthalic acid, tolylacetic acid, phenoxy propionic acid, hydroxy-phenylpropionic acid, benzyloxy guanidine-acetic acid, phenyl Lactic acid, tropic acid, 3- (benzenesulfonyl) propionic acid, 3,3- tetramethylene glutaric acid, 5- oxo azelaic acid, azelaic acid, benzene succinic acid, 1,2- phenylenediacetic Acid, 1,3- phenylenediacetic Acid, Isosorbide-5-Nitrae-phenylenediacetic Acid, benzyl malonic acid, decanedioic acid, dodecanedioic acid, hendecane two Acid, diphenyl acetic acid, benzyl acid, dicyclohexyl acetic acid, tetracosandioic acid, 2,2- diphenyl-propionic acid, 3,3- diphenyl-propionic acid, 4,4- are bis- (4- hydroxy phenyl) valeric acid, pimaric acid, palustric acid, isodextropimaric acid, abietic acid, dehydroabietic acid, neoabietic acid, agathic acid etc.
It as aromatic carboxylic acid, can enumerate, such as benzoic acid, 2 hydroxybenzoic acid, 3- hydroxybenzoic acid, 4- hydroxy benzenes Formic acid, 2,3- dihydroxy-benzoic acid, 2,4- dihydroxy-benzoic acid, 2,5-dihydroxybenzoic acid, 2,6-DHBA, 3,4- Dihydroxy-benzoic acid, 2,3,4- trihydroxybenzoic acids, 2,4,6- trihydroxybenzoic acids, Gallic Acid, 1,2,3- Benzenetricarboxylic acid, 1,2,4- benzenetricarboxylic acids, 1,3,5- benzenetricarboxylic acids, 2- [bis- (4- hydroxy phenyl) methyl] benzoic acid, 1- naphthoic acid, 2- naphthoic acid, 1- hydroxy-2-naphthoic acid, 2- hydroxyl -1- naphthoic acid, 3- hydroxy-2-naphthoic acid, 6-Hydroxy-2-naphthoic acid, Isosorbide-5-Nitrae - Dihydroxy-2-naphthoic acid, 3,5- dihydroxy-2-naphthoic acid, 3,7- dihydroxy-2-naphthoic acid, 2,3- naphthalenedicarboxylic acid, 2,6- naphthalene two Formic acid, 2- phenoxy benzoic acid, biphenyl-4-carboxylic acid, diphenyl-2-carboxylic acid, 2- benzoylbenzoic acid etc..
Wherein, as (E) flux constituent, from storage stability and from the viewpoint of obtaining difficulty, can be used succinic acid, Bis- (methylol) propionic acid of malic acid, itaconic acid, 2,2-, adipic acid, 3,3 '-thio-2 acids, 3,3 '-dithiodipropionic acids, 1, 2,3,4- butane tetracarboxylic acid, suberic acid, decanedioic acid, benzene succinic acid, dodecanedioic acid, diphenyl acetic acid, benzyl acid, the bis- (4- of 4,4- Hydroxy phenyl) valeric acid, abietic acid, 2,5-dihydroxybenzoic acid, Gallic Acid, 1,2,4- benzenetricarboxylic acids, 1,3,5- Benzenetricarboxylic acid, 2- [bis- (4- hydroxy phenyl) methyl] benzoic acid etc..These compounds either a kind of ingredient is used alone, It can be two or more use of combination.
In an embodiment of the invention, (E) flux constituent is dicarboxylic acids.
In other implementations, the decomposition temperature of (E) flux constituent is 100~300 DEG C.Further, at other In embodiment, the decomposition temperature of (E) flux constituent is 150~290 DEG C.
By cooperating dicarboxylic acids, the oxidation overlay film of the supporting member of engagement can be not only removed, can also removed because connecing While closing the oxidation overlay film and silver oxide of (C) ingredient and (D) ingredient that exchange reaction when heating generates, because existing on surface Surface treating agent (stearic acid, palmitinic acid, caproic acid, oleic acid etc.) by dicarboxylic acids itself decompose or evaporate, after will not influence Sintering between silver.Therefore, it can be sintered in a low temperature of before than addition between silver.
The decomposition temperature of above-mentioned (E) flux constituent is lower than 100 DEG C because its also volatility is high at normal temperature, be easy to produce The phenomenon that decline of the raw reducing power as caused by the volatilization of dispersing agent, it is possible to stable adhesive strength cannot be obtained.
In addition, the decomposition temperature of (E) flux constituent is more than 300 DEG C, then it is difficult to happen the sintering of conductive film sometimes, lacks and cause Close property, flux constituent can not volatilize and remain in film.
It is excellent relative to total 100 mass parts of above-mentioned (C) ingredient and (D) ingredient as the amount of (E) flux constituent Choosing is set as 0.01~5 mass parts.
(E) amount of flux constituent is more than 5 mass parts, it is possible to can because gap generation to its trustworthiness caused by dislike Bad influence.
(E) amount of flux constituent is lower than 0.01 mass parts, it is possible to will lead to the function of not playing flux activity.
In the present invention, (F) nano-sized carbon can be further included.
It can enumerate, such as carbon nanotube (single layer, bilayer, multi-layered type, cup heap-type), carbon nano-fiber etc..
" nano-sized carbon " refers to that at least size of a line is in 1000nm small carbon below in the shape of its material.
In above-mentioned nano-sized carbon, preferably carbon nanotube.Because the fibrous protrusion meeting of carbon nanotube will such as tentacle It links together well between silver particles via ceramic particle, increase its pyroconductivity.
Single-walled carbon nanotube both can be used in carbon nanotubes, and multi-walled carbon nanotube also can be used.
In one embodiment, the average fiber length of carbon nanotube is 0.1~100 μm.In other embodiments In, average fiber length is 0.1~50 μm.Further, in other embodiments, average fiber length is 0.1~20 μm.
Moreover, in one embodiment, the avarage fiber diameter of carbon nanotube is 5~200nm.In other embodiments In, avarage fiber diameter is 8~160nm.Further, in other embodiments, avarage fiber diameter is 9~120nm.
Moreover, (F) nano-sized carbon can be ceramic particle obtained from being sintered in a manner of dispersing containing nano-sized carbon.With Dispersity contains the manufacturing method of the ceramic particle of nano-sized carbon, is not particularly limited, as long as can obtain dispersion contains nanometer The ceramic raw material particle of carbon.
It can enumerate, such as: the nano-sized carbon of specified amount and ceramic raw material particle are cooperated in a solvent and slurry is made, it is right The method for the rear sintering that the slurry is dried.Also, at this point, a part of nano-sized carbon can from the ceramic surface protrusion of particle and It is formed.
As (F) nano-sized carbon, be by disperse containing nano-sized carbon in a manner of be sintered obtained from ceramic particle the case where Under, which can be average particle diameter in the particle of 1~10 μm of size.Herein, average particle diameter is by swashing The 50% integrating value (D in particle distribution that optical diffraction scattering formula particle distribution measuring method is measured based on volume reference50)。
Because comprising (F) nano-sized carbon, it is wound with nano-sized carbon on the silver granuel network that is formed in the resin combination of sheet, by This, obtains the resin combination of heat conductivity, excellent electric conductivity.
(F) use level of ingredient, can be in the 5 mass % or less of resin combination entirety.(F) use level of ingredient is more than 5 mass %, may result in viscosity increase, and operability reduces.Using ceramic particle, the use level of (F) ingredient The only amount of nano-sized carbon contained in ceramic particle.
Semiconductor bonding resin combination in the present invention can further include (methyl) that (G) has hydroxyl Acrylate compounds or (methyl) acrylamide compound.Because containing hydroxyl, by restoring while acceleration of sintering, Increase its cementability.
Herein, (G) ingredient, using (methyl) acrylate compounds or (methyl) acrylamide compound as matrix skeleton, It can have substituent group, which has aliphatic alkyl of the carbon number 4~100.Hydroxyl is by the hydrogen in aliphatic alkyl Atom replace and the group that has as alcohol group.
In one embodiment of the present invention, above-mentioned hydroxyl amount is 1~50 in 1 molecule.Hydroxyl amount exists Within the scope of this, its agglutinating property will not be hindered because solidifying excessively.
For the use level of (G) ingredient, relative to the packing material of above-mentioned (C) ingredient and the silver particles of (D) ingredient Total 100 mass parts, be preferably set to 1~20 mass parts.Cooperate in range herein, it is available to be engaged by semiconductor element Good adhesive strength when on to element supporting member.
(G) use level of ingredient is more than 20 mass parts, then the resin containing ratio in solidified material layer increases, therefore, sometimes Pyroconductivity characteristic and specific resistance is caused to reduce.
(G) use level of ingredient is lower than 1 mass parts, sometimes results in adhesive strength decline.
Semiconductor bonding resin combination of the invention can further include coupling agent (H).The coupling agent used does not have There is particular determination, can enumerate, such as 3- methacryloxypropyl trimethoxy silane, 3- acryloxypropyl front three Oxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyl three ('beta '-methoxy ethyoxyl) silane, β-(3,4- epoxycyclohexyl) ethyl trimethoxy silane, 3- glycidoxypropyl group trimethoxy silicon, 3- glycidoxy third Ylmethyl diethoxy silicon, 3- aminopropyl triethoxysilane, N- phenyl -3- TSL 8330,3- mercapto propyl Trimethoxy silane, titanate esters system coupling agent, aluminium system coupling agent, zirconate system coupling agent, zirconium aluminate system coupling agent etc..
In one embodiment, the use level of the coupling agent as (H) ingredient be relative to resin combination generally speaking 0.01~5 mass % range.In other embodiments, the use level of (H) ingredient is the range of 0.04~4 mass %.
(H) use level of ingredient is lower than 0.01 mass %, can not obtain sufficient cementability sometimes.
(H) use level of ingredient is more than 5 mass %, and bleeding can occur when cream is coated with sometimes.
Resin combination of the invention can also cooperate the combination in the type in addition to above each ingredient if necessary The low stresses such as curing accelerator, rubber and silicone for being generally mated in object agent, coupling agent, defoaming agent, surfactant, coloring Agent (pigment, dyestuff), various polymerization inhibitors, antioxidant, other various additives.
Above-mentioned each additive both can a kind of substance be used alone, be also possible to two or more substances and be used cooperatively.
It as above-mentioned additive, can enumerate, epoxy silane, hydrosulphonyl silane, amino silane, alkyl silane, uride silicon The silane coupling agents such as alkane, vinyl silanes, vulcanization silane；The coupling such as titanate coupling agent, aluminium system coupling agent, zirconium/zirconium coupling agent Agent；The colorants such as carbon black；The chemical conversion point of the solids low stress such as silicone oil, silicone rubber；Inorganic ion exchangers such as hydrotalcite etc..
Semiconductor bonding of the invention can be used generally acknowledged method with resin combination and manufacture.For example, of the invention half Conductor bonding is that the various composition cooperated by above-mentioned (A)~(D) ingredient and when necessary uses pot type powder with resin combination Blender well known to broken machine, ball mill, ball mill, roller mill, homogenizer, super grinding machine, mixing and kneading machine etc., by room temperature or add Heat is lower to be kneaded, and then, is obtained after solvent dilution is added if necessary.
Semiconductor bonding of the invention is that sheet-like formed body is made with resin combination in above-mentioned Semiconductor bonding with piece Obtained from.The Semiconductor bonding piece can show the good zygosity between semiconductor and supporting member, especially pass through Oversintering engagement shows good electric conductivity and heat conductivity.
The manufacturing method of Semiconductor bonding piece of the invention, obtains by as follows.Firstly, above-mentioned by molten The viscosity of the Semiconductor bonding obtained after dilution agent resin combination is modulated to 0.5~2Pas or so.
Then, above-mentioned Semiconductor bonding resin combination passes through dry after being coated on support membrane in the method generally acknowledged It obtains.
Specifically, using stick coating method, cutter painting method, rolling method, knife coating, die coating method, gravure coating method etc. on support membrane Well known coating method is coated, is dried, and semi-cured state is made and obtains.
As support membrane, the polyethylene in side setting parting-agent layer, polypropylene, polyester, polycarbonate, poly- virtue have been used The plastic foils such as ester, polyacrylonitrile.
In one embodiment, the thickness of the support membrane is usually 10~50 μm according to its treatability feature.At it It is 25~38 μm in his embodiment.
Moreover, the thickness after the drying for passing through the adhesive layer of the Semiconductor bonding piece of above method acquisition, in a reality Apply is 5~50 μm in mode.
In other embodiments, after the drying of adhesive layer with a thickness of 10~30 μm.
Semiconductor device of the invention is that semiconductor element is bonded on substrate etc. with piece using above-mentioned Semiconductor bonding It is formed on supporting member.In other words, herein, Semiconductor bonding, which uses bonding sheet, is made as heat conductivity/electric conductivity touch control sheet ?.Fig. 1 is the side view for indicating the rough structure of the semiconductor device as an embodiment.As an embodiment party The semiconductor device 1 of formula, as described above, being that semiconductor element 3 is bonded on supporting member 4 using Semiconductor bonding piece 2.
Semiconductor device of the invention can be manufactured as follows in one embodiment.
Firstly, Semiconductor bonding is in 50~80 DEG C of temperature, 0.1~1MPa of pressure, heating pressing time 0.1~1 with piece Under conditions of minute, in the upper pre- engagement such as joint surface of silicon chip.
Then, the silicon chip of engagement Semiconductor bonding piece is after installing on the supporting members such as copper frame, in temperature 80 in advance ~200 DEG C, 0.1~5MPa of pressure, heating 0.1~1 minute pressing time under conditions of, be heated and pressurizeed, crimped.
Further, under the conditions of 200~250 DEG C of temperature, the silicon chip after installation is heated, solidification 0.5~2 hour, Thereby, it is possible to manufacture semiconductor device.
Herein, semiconductor element can enumerate semiconductor element well known to transistor, diode, light-emitting component etc., especially It is that can enumerate silicon carbide (SiC:Silicon Carbide) equipment constant power semiconductor element.Moreover, supporting member can be lifted Copper, silver-colored copper facing, PPF (pre-plated lead frame), glass epoxy resin, ceramics, DBC substrate etc..
The semiconductor device for carrying out and obtaining as described above is by partly leading with superior thermal conductivity and electric conductivity Body bonding chip bonding not will form gap on supporting member, not will form leg, therefore, not have bonding agent along half The side of conductor element flows up, and can effectively reduce its size.Further, carry out as described above and obtain half Conductor device also has good connection reliability relative to temperature cycles after mounting.
Embodiment
(Production Example 1)
<modulation of spherical silver coated silica particle>
Spherical silver coated silica particle is to be attached to palladium as catalyst core on spherical silicon dioxide first, system Glomeration palladium adheres to matrix particle.
Then, after adhering to nickel particles on the surface of spherical palladium attachment matrix particle, spherical nickel film matrix particle is made, it should Spherical nickel film matrix particle is formed with the nickel epithelium as silver-plated basal layer on surface.
Finally, obtaining spherical silver coated silica particle in the electroplate of spherical nickel film matrix particle.It is described in detail It is such as following.
Spherical palladium attachment matrix particle is by 10g Volume average particle diameter D50For 3.5 μm of spherical silicon dioxide particle (trade name: US-5, Long Sen limited liability company (Co., Ltd. dragon is gloomy) manufacture) carries out alkaline degreasing, carries out acid neutralization, into Row etching is added palladium dichloride solution, is stirred and is made after washing.
Spherical nickel particles attachment matrix particle is first by above-mentioned spherical palladium attachment matrix particle in 300mL deionized water After middle stirring 3 minutes, then add 1g metallic Ni particles slurry (trade name: 2020SUS, mining industry limited liability company, Mitsui Metal Co., Ltd. (Mitsu Mining & Smelting Co., Ltd) manufacture), using the palladium on the surface of spherical palladium attachment matrix particle as catalyst core, spherical Palladium adheres to precipitating nickel on the surface of matrix particle and is made.
Spherical nickel film matrix particle is after diluting above-mentioned nickel particles attachment matrix particle in the distilled water of 1000mL, The plating stabilizer that 4mL is added simultaneously stirs, and in turn, then is slowly added to the sulfuric acid by 400g/L while while stirring Nickel, the sodium hypophosphite of 100g/L, the sodium citrate of 100g/L, 6mL plating stabilizer composed by 150mL mixed solution and It is made.
Spherical silver coated silica particle is that above-mentioned spherical nickel film matrix particle is put into electroless silver plating solution In be made, the electroless silver plating solution be mixing 5g silver nitrate, 1200mL distilled water, 10g benzimidazole solution in, then plus Enter 30g bromosuccinimide, 4g citric acid progress mixed dissolution, it is manufactured in addition 10g glyoxalic acid.
Spherical silver coated silica particle is washing after carrying out electroless plating under 80 DEG C of heating stirrings, then through ethyl alcohol The silver-colored coating particles of displacement are dry, obtain silver-colored coated silica particle.The length-width ratio of above-mentioned silver coated silica particle is 1.01, specific surface area 1.5m2/ g, Volume average particle diameter D50=3.8 μm, the ratio of Volume average particle diameter is D50/D10 =1.8, maximum particle diameter is 19 μm, specific gravity 2.8, and silver-colored covering amount is 27.3 mass %.
<Examples 1 to 3, comparative example 1~4>
Resin combination in the present invention is after being sufficiently mixed according to mixing ratio shown in table 1 to each ingredient, through three rollers It is kneaded and manufactured resin combination.After this, propylene glycol monomethyl ether (PGM) of the addition as solvent into resin combination And methyl ethyl ketone, it is 40 mass % that solid component, which is made,.
On 40 μm of thickness of polypropylene screen, be coated drying by roll-coater makes the resin combination of above-mentioned acquisition Thickness after drying becomes 15 μm, obtains Semiconductor bonding piece.
(A) ingredient
(A1): main chain has the solid-state bimaleimide resin (trade name: BMI-5000, number point of aliphatic alkyl Subsidiary (デ walks mono- Le ズ society of グ ナ ー モ レ キ ュ) manufacture, number-average molecular weight 5000).
(A2): main chain has the liquid bimaleimide resin (trade name: BMI-1500, number point of aliphatic alkyl Subsidiary (one モ レ キ ュ ー Le ズ society of デ ヅ グ Na) manufacture, number-average molecular weight 1500).
(B) ingredient: cumyl peroxide (trade name: mono- Network ミ Le D of パ, Japanese grease limited liability company (Japan's oil Rouge Co., Ltd.) manufacture).
(C) ingredient: Production Example 1 manufacture spherical silver coated silica particle (average particle diameter: 3.8 μm, specific gravity: 2.8)。
Other packing materials: silver particles (trade name: AgC-212D, Bo Fen Industries, Inc, FUKUDA METAL (good fortune Field metal foil powder Industrial Co., Ltd) manufacture, average particle diameter: 5 μm, specific gravity 10.5).
(D) ingredient
(D1): plate silver particles (trade name: M13, special thread industrial limited liability company (ト Network セ Application industry strain formula meeting Society) manufacture, central particles diameter: 2 μm, thickness: 50nm or less).
(D2): spherical silver particles (trade name: MDot, three star machine band limited liability company (Samsung ペ Le ト Co., Ltd.) Manufacture, average particle diameter: 50nm).
(E) ingredient: malic acid.
(F) ingredient: carbon nanotube (trade name: VGCF, Showa electrician limited liability company (Showa Denko K. K) system It makes；Avarage fiber diameter: 80nm, average fiber length；10μm).
(G) ingredient: hydroxyethyl acrylamide (trade name: HEAA, Xing Ren Co., Ltd (Kohjin Co., Ltd.) manufacture).
(H) ingredient: glycidoxy octyl trimethoxy silane (trade name: KBM-4803, the limited public affairs of SHIN-ETSU HANTOTAI's chemical industry Take charge of (Shin-Etsu Chemial Co., Ltd) manufacture).
<evaluation method>
[operability]
The operability evaluation of Semiconductor bonding piece is after the Semiconductor bonding that will be obtained is bent with piece 180 degree, by such as Lower standard is evaluated.
A: without damaged or from the disengaging on film.
B: not from the disengaging on film, but there is exception in appearance.
C: occur damaged or from the disengaging on film.
[pre- zygosity]
The pre- zygosity evaluation of Semiconductor bonding piece is by the way that Semiconductor bonding to be bonded on piece with following condition in advance The silicon chip of 6mm × 6mm and be provided on joint surface gold vapor deposition layer back-side gold chip on when, the situation that can be pasted, then It is determined as " A ", not the situation of Pasting, then is determined as " B ".
The size of silicon chip is 6mm × 6mm.
The pre- zygosity condition of Semiconductor bonding piece is crimped under 65 DEG C, 1 second, 1MPa pressure.
[adhesive strength when hot]
Semiconductor bonding piece pre- zygosity evaluation be by test film carry out solidification and moisture absorption processing after, use peace Fill strength detection device measure 260 DEG C when heat when shear strength.
The condition of moisture absorption processing is 85 DEG C, relative humidity 85%, 72 hour.
Test film is Semiconductor bonding piece on silicon chip and the back-side gold chip that gold vapor deposition layer is arranged on joint surface It carries out after engaging in advance, the installation in the copper frame and PPF (the copper frame of Ni-Pd/Au plating) without dirt, in 125 DEG C, 5 seconds, 0.1MPa pressure After heating is crimped under the conditions of power, solidification in 1 hour is carried out by 220 DEG C of baking ovens and is made.
The size of silicon chip is 6mm × 6mm.
The pre- engaging condition of Semiconductor bonding piece is crimped under 65 DEG C, 1 second, 1MPa pressure condition.
[pyroconductivity]
The pyroconductivity of Semiconductor bonding piece is to be solidified according to JIS R 1611-1997 by Measurement By Laser Flash The pyroconductivity of object.
[resistance]
The resistance of Semiconductor bonding piece is that test film is passed through MCP-T600 (trade name, the limited public affairs of Mitsubishi Chemical's share Department's manufacture) it is measured using four-terminal method.
Test film is to be pasted onto glass substrate under conditions of 65 DEG C, 1 second, pressure 1MPa with piece using Semiconductor bonding On (thickness 1mm), solidifies through 200 DEG C, 60 minutes and be made.
[anti-encapsulation disruptiveness]
Test film is that silicon chip is mounted in copper frame and PPF via Semiconductor bonding piece, and 200 are carried out on hot plate DEG C, 60 seconds, pressure 2.5MPa is heating and curing, or carries out 200 DEG C, 60 minutes, the heating of pressure 2.5MPa using baking oven After solidification, the epoxy potting material (trade name, KE-G3000D) manufactured using Kyoto Ceramic Co., Ltd, under the following conditions It is formed.
Detailed test film manufacturing conditions are as follows.
The size of silicon chip: 6mm × 6mm.
Encapsulation: 80pQFP (14mm × 20mm × 2mm thickness).
Chip: the gold-plated chip of silicon chip and the back side.
Lead frame: PPF and copper.
The molding of sealing material: 175 DEG C, 2 minutes.
Rear mold solidification: 175 DEG C, 8 hours.
(1) resistance to IR is reflow
The anti-encapsulation disruptiveness evaluation of Semiconductor bonding piece is under conditions of 85 DEG C, relative humidity 85%, 168 hour Carry out IR reflow treatment (260 DEG C, 10 seconds) on moisture absorption treated test film, then by ultrasonic microscope observation encapsulation inside The frequency in crack.
The evaluation result of table 1 is that the sample number in crack is produced in the sample for indicate 5.
(2) cold-resistant thermal impact
The cold-resistant thermal impact evaluation of Semiconductor bonding piece is after carrying out cold cycling treatment using said sample piece, then The generation number of the internal fissure respectively encapsulated after each processing is observed by ultrasonic microscope.
The condition of cold cycling treatment is that 150 DEG C are warming up to from -55 DEG C, is cooled to -55 DEG C of process and follows as one The ring period recycles this periodic process 1000 times.
The evaluation result of table 1 is that the sample number in crack is produced in the sample for indicate 5.
[voidage]
The voidage evaluation of Semiconductor bonding piece is according to X-ray transparent device (trade name: SMX-1000, Shimadzu system Micro- focusing X-ray verifying attachment of Zuo Suo limited liability company (Shimadzu Scisakusho Ltd) manufacture) from relative to joint surface Vertical direction observe solder-joint parts, calculate void area and joint portion area, calculated by following formula.
Voidage (%)=void area ÷ (void area+joint portion area) × 100
Voidage is evaluated as " A " lower than 5%, and 5% is evaluated as " B " more than and less than 8%, and 8% is evaluated as " C ".
Above-mentioned evaluating characteristics result is shown in table 1 together with the composition of Semiconductor bonding resin combination.
By above-mentioned it is found that obtaining having as the adhesives that can show excellent heat conductivity and electric conductivity Resin combination.Therefore, semiconductor element is bonded on by the semiconductor device on supporting member by the resin combination, Can have excellent heat conductivity and electric conductivity on supporting member and the engagement semiconductor element of leg can not occur.It is logical Cross above-mentioned it is found that resin combination of the invention is excellent on Semiconductor bonding use (especially power semiconductor bonding is used) Resin combination can provide the semiconductor device of the high reliability of raising efficiency by using the resin combination.
Claims (according to the 19th article of modification of treaty)
1. a kind of Semiconductor bonding piece, which is characterized in that it is made of to use resin combination as raw material using Semiconductor bonding Sheet-like formed body, the Semiconductor bonding includes with resin combination:
(A) main chain has the bimaleimide resin of aliphatic alkyl；
(B) curing agent；
(C) packing material comprising electroconductive particle that specific gravity is 1.1~5.0；And
(D) average particle diameter is the silver particles of 10~300nm.
2. Semiconductor bonding piece as described in claim 1, which is characterized in that above-mentioned (A) ingredient includes the following general formula (1) table The bismaleimide compound (A1) shown,
In general formula, n be 1~10 integer.
3. Semiconductor bonding piece as claimed in claim 1 or 2, which is characterized in that above-mentioned (A) ingredient includes the following general formula (2) bismaleimide compound (A2) indicated,
In general formula, Q is divalent straight-chain, branched or the cricoid aliphatic alkyl of 6 or more carbon number, and P is from O, CO, COO, CH2、 C(CH3)2、C(CF3)2、S、S2, SO and SO2In the atom or organic group of divalent selected, or contain at least more than one Above-mentioned atom or organic group organic group, m be 1~10 integer.
4. Semiconductor bonding piece as claimed in claim 3, which is characterized in that according to quality criteria, with above-mentioned (A1)/above-mentioned (A2) ratio for 5/95~30/70 contains above-mentioned (A1) and above-mentioned (A2).
5. the Semiconductor bonding piece as described in any one of Claims 1 to 4, which is characterized in that above-mentioned (C) ingredient is silver Containing ratio is the silver-colored coating particles of 10~60 mass %.
6. the Semiconductor bonding piece as described in any one of Claims 1 to 5, which is characterized in that above-mentioned (C) ingredient is silver Coated silica particle.
7. the Semiconductor bonding piece as described in any one of claim 1~6, which is characterized in that relative to above-mentioned (A) at 100 mass parts of resin divided, the amount of above-mentioned (B) ingredient are 0.1~10 mass parts,
Total amount of above-mentioned (C) ingredient and above-mentioned (D) ingredient is 40~80 mass % of resin combination totality, and on The mass ratio for stating (C) ingredient and (D) ingredient is 10:90~90:10.
8. the Semiconductor bonding piece as described in any one of claim 1~7, which is characterized in that further, include (E) flux constituent.
9. the Semiconductor bonding piece as described in any one of claim 1~8, which is characterized in that further, include (F) nano-sized carbon.
10. a kind of semiconductor device, which is characterized in that it is via Semiconductor bonding described in any one of claim 1~9 Semiconductor element is bonded on supporting member with piece.

Claims (11)

1. a kind of Semiconductor bonding resin combination, which is characterized in that it includes:
(A) main chain has the bimaleimide resin of aliphatic alkyl；
(B) curing agent；
(C) packing material comprising electroconductive particle that specific gravity is 1.1~5.0；And
(D) average particle diameter is the silver particles of 10~300nm.
2. Semiconductor bonding resin combination as described in claim 1, which is characterized in that above-mentioned (A) ingredient includes following The bismaleimide compound (A1) that general formula (1) indicates,
In general formula, n be 1~10 integer.
3. Semiconductor bonding resin combination as claimed in claim 1 or 2, which is characterized in that under above-mentioned (A) ingredient includes The bismaleimide compound (A2) of general formula (2) expression is stated,
In general formula, Q is divalent straight-chain, branched or the cricoid aliphatic alkyl of 6 or more carbon number, and P is from O, CO, COO, CH2、 C(CH3)2、C(CF3)2、S、S2, SO and SO2In the atom or organic group of divalent selected, or contain at least more than one Above-mentioned atom or organic group organic group, m be 1~10 integer.
4. Semiconductor bonding resin combination as claimed in claim 3, which is characterized in that according to quality criteria, with above-mentioned (A1) ratio that/above-mentioned (A2) is 5/95~30/70 contains above-mentioned (A1) and above-mentioned (A2).
5. the Semiconductor bonding resin combination as described in any one of Claims 1 to 4, which is characterized in that above-mentioned (C) Ingredient is the silver-colored coating particles that silver-colored containing ratio is 10~60 mass %.
6. the Semiconductor bonding resin combination as described in any one of Claims 1 to 5, which is characterized in that above-mentioned (C) Ingredient is silver-colored coated silica particle.
7. the Semiconductor bonding resin combination as described in any one of claim 1~6, which is characterized in that relative to 100 mass parts of resin of above-mentioned (A) ingredient, the amount of above-mentioned (B) ingredient are 0.1~10 mass parts,
Total amount of above-mentioned (C) ingredient and above-mentioned (D) ingredient is 40~80 mass % of resin combination totality, and on The mass ratio for stating (C) ingredient and (D) ingredient is 10:90~90:10.
8. the Semiconductor bonding resin combination as described in any one of claim 1~7, which is characterized in that further Ground includes (E) flux constituent.
9. the Semiconductor bonding resin combination as described in any one of claim 1~8, which is characterized in that further Ground includes (F) nano-sized carbon.
10. a kind of Semiconductor bonding piece, which is characterized in that it is with semiconductor described in any one of claim 1~9 Bonding uses resin combination as sheet-like formed body made of raw material.
11. a kind of semiconductor device, which is characterized in that it is via Semiconductor bonding piece described in any one of claim 10 by semiconductor Element is bonded on supporting member.
CN201680090744.4A 2016-11-10 2016-11-10 Semiconductor bonding resin combination, Semiconductor bonding piece and the semiconductor device using it Pending CN109952356A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/083349 WO2018087858A1 (en) 2016-11-10 2016-11-10 Semiconductor-bonding resin composition, semiconductor-bonding sheet, and semiconductor device using semiconductor-bonding sheet

Publications (1)

Publication Number Publication Date
CN109952356A true CN109952356A (en) 2019-06-28

Family

ID=62110400

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680090744.4A Pending CN109952356A (en) 2016-11-10 2016-11-10 Semiconductor bonding resin combination, Semiconductor bonding piece and the semiconductor device using it

Country Status (4)

Country Link
US (1) US10767085B2 (en)
EP (1) EP3540025B1 (en)
CN (1) CN109952356A (en)
WO (1) WO2018087858A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109002214B (en) * 2018-07-26 2020-05-26 京东方科技集团股份有限公司 Touch substrate, driving method thereof and touch display device
JPWO2022137552A1 (en) * 2020-12-25 2022-06-30

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091750A (en) * 2002-09-04 2004-03-25 Shin Etsu Chem Co Ltd Electroconductive silicone pressure-sensitive adhesive composition
JP2005109160A (en) * 2003-09-30 2005-04-21 Tokai Rubber Ind Ltd Electromagnetic shielding tape and shielding flat cable using it
JP2009295688A (en) * 2008-06-03 2009-12-17 Kyocera Chemical Corp Method for manufacturing semiconductor device and semiconductor device
CN101849179A (en) * 2007-09-13 2010-09-29 3M创新有限公司 The electronic adhesives of low temperature bonding
CN103391973A (en) * 2011-03-01 2013-11-13 纳美仕有限公司 Electrically conductive composition
CN104893601A (en) * 2015-05-19 2015-09-09 中国航空工业集团公司北京航空材料研究院 Conductive adhesive film with two conductive structures and preparation method of conductive adhesive film
WO2015151136A1 (en) * 2014-04-04 2015-10-08 京セラケミカル株式会社 Thermosetting resin composition, semiconductor device and electrical/electronic component
WO2016031552A1 (en) * 2014-08-29 2016-03-03 古河電気工業株式会社 Electrically conductive adhesive composition
WO2016116959A1 (en) * 2015-01-19 2016-07-28 京セラケミカル株式会社 Conductive resin composition and semiconductor device
WO2016167245A1 (en) * 2015-04-16 2016-10-20 古河電気工業株式会社 Electrically conductive adhesive film and dicing die bonding film

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178309B2 (en) 1995-08-14 2001-06-18 株式会社アドマテックス Conductive epoxy resin composition
JP4635412B2 (en) 2003-07-22 2011-02-23 住友ベークライト株式会社 Conductive adhesive film and semiconductor device using the same
JP2007217693A (en) * 2007-02-15 2007-08-30 Shin Etsu Chem Co Ltd Silicone rubber composite material and method for producing the same
JP5419441B2 (en) * 2008-12-26 2014-02-19 富士フイルム株式会社 Method for forming multilayer wiring board
EP3796336A1 (en) 2010-11-03 2021-03-24 Alpha Assembly Solutions Inc. Sintering materials and attachment methods using same
US20130256894A1 (en) 2012-03-29 2013-10-03 International Rectifier Corporation Porous Metallic Film as Die Attach and Interconnect
US9200184B2 (en) 2012-05-17 2015-12-01 Henkel IP & Holding GmbH Chain extended epoxy to improve adhesion of conductive die attach film
JP6309451B2 (en) * 2012-09-20 2018-04-11 株式会社クラレ Circuit board and manufacturing method thereof
JP6333576B2 (en) 2013-03-01 2018-05-30 京セラ株式会社 Thermosetting resin composition, semiconductor device and electric / electronic component
WO2014157581A1 (en) * 2013-03-29 2014-10-02 トッパン・フォームズ株式会社 Laminate and circuit board
CN110325664A (en) * 2017-03-15 2019-10-11 富士胶片株式会社 Manufacturing method, conductive laminate and the touch sensor of conductive laminate

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091750A (en) * 2002-09-04 2004-03-25 Shin Etsu Chem Co Ltd Electroconductive silicone pressure-sensitive adhesive composition
JP2005109160A (en) * 2003-09-30 2005-04-21 Tokai Rubber Ind Ltd Electromagnetic shielding tape and shielding flat cable using it
CN101849179A (en) * 2007-09-13 2010-09-29 3M创新有限公司 The electronic adhesives of low temperature bonding
JP2009295688A (en) * 2008-06-03 2009-12-17 Kyocera Chemical Corp Method for manufacturing semiconductor device and semiconductor device
CN103391973A (en) * 2011-03-01 2013-11-13 纳美仕有限公司 Electrically conductive composition
WO2015151136A1 (en) * 2014-04-04 2015-10-08 京セラケミカル株式会社 Thermosetting resin composition, semiconductor device and electrical/electronic component
WO2016031552A1 (en) * 2014-08-29 2016-03-03 古河電気工業株式会社 Electrically conductive adhesive composition
WO2016116959A1 (en) * 2015-01-19 2016-07-28 京セラケミカル株式会社 Conductive resin composition and semiconductor device
WO2016167245A1 (en) * 2015-04-16 2016-10-20 古河電気工業株式会社 Electrically conductive adhesive film and dicing die bonding film
CN104893601A (en) * 2015-05-19 2015-09-09 中国航空工业集团公司北京航空材料研究院 Conductive adhesive film with two conductive structures and preparation method of conductive adhesive film

Also Published As

Publication number Publication date
EP3540025A4 (en) 2020-06-24
EP3540025B1 (en) 2023-09-13
WO2018087858A1 (en) 2018-05-17
US10767085B2 (en) 2020-09-08
EP3540025A1 (en) 2019-09-18
US20190264071A1 (en) 2019-08-29

Similar Documents

Publication Publication Date Title
JP6563700B2 (en) Semiconductor bonding resin composition, semiconductor bonding sheet, and semiconductor device using the same
US8398898B2 (en) Soluble metal salts for use as conductivity promoters
TWI443684B (en) Conductive particle, method for producing the same, and anisotropic conductive film, joined structure and connecting method
KR20130129392A (en) Binding material, binding body, and binding method
US20080272344A1 (en) Conductive polymer composites
TWI712661B (en) Conductive paste and conductive film formed by using it
JP2016065146A (en) Thermosetting resin composition, semiconductor device and electrical and electronic component
JP2011526054A (en) Conductive ink and paste
CN101805574A (en) Sintered type conductive adhesive adopting silver filling with surfaces subjected to activating treatment and preparation method thereof
WO2015060245A1 (en) Silver paste and semiconductor device using same, and production method for silver paste
WO2017182621A1 (en) An electrically conductive, hot-melt adhesive or moulding composition
TW201435041A (en) Thermally-conductive, electrically-conductive adhesive composition
WO2018163921A1 (en) Resin composition, method for producing resin composition, and structure
TW201227754A (en) Conductive paste and base with conductive film
TW201245364A (en) Adhesive composition and semiconductor device using same
JP2014196527A (en) Fine flaky particles
JP2014055332A (en) Production method of heating sinterability metal microparticle, pasty metal microparticle composition, solid shape metal or production method of solid shape metal alloy, joint method of metal made member subject, production method of print circuit board, and production method of electric circuit connection bump
TWI771559B (en) Silver-coated resin particle
CN109952356A (en) Semiconductor bonding resin combination, Semiconductor bonding piece and the semiconductor device using it
JP2019173023A (en) Sheet for semiconductor bonding and semiconductor device including the same
TWI582793B (en) Standardization of conductive paste and conductive paste
JP2011103307A (en) Anisotropic conductive film
JP5014895B2 (en) Method for producing silica-coated gold colloidal particles and silica-coated gold colloidal particles
JP2012169212A (en) Composition for forming conductive pattern and method for forming conductive pattern
JP7064482B2 (en) Manufacturing method of semiconductor device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190628

WD01 Invention patent application deemed withdrawn after publication