CN109950888A - A kind of direct current protection circuit and electronic equipment - Google Patents
A kind of direct current protection circuit and electronic equipment Download PDFInfo
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- CN109950888A CN109950888A CN201711387651.0A CN201711387651A CN109950888A CN 109950888 A CN109950888 A CN 109950888A CN 201711387651 A CN201711387651 A CN 201711387651A CN 109950888 A CN109950888 A CN 109950888A
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Abstract
The invention discloses a kind of direct current protection circuit and electronic equipments, which includes concatenated semiconductor discharge tube and Transient Suppression Diode, and the first DC line accesses cathode voltage, and the second DC line accesses cathode voltage；When forward voltage between first DC line and the second DC line is greater than the first predeterminated voltage, Transient Suppression Diode and semiconductor discharge tube conducting, the first predeterminated voltage are the superposition of the clamp voltage of Transient Suppression Diode and the break over voltage of semiconductor discharge tube；When backward voltage between first DC line and the second DC line is greater than the second predeterminated voltage, Transient Suppression Diode and semiconductor discharge tube are in two concatenated forward diode conductings.It realizes and reduces the residual voltage of direct current protection circuit, reduces chip power-consumption, area and the cost for reducing direct current protection circuit, and realize the miniaturization of direct current protection circuit and the effect of anti-reverse multiple-protection.
Description
Technical field
The present embodiments relate to semiconductor device arts more particularly to a kind of direct current protection circuit and electronics to set
It is standby.
Background technique
Electronic equipment is in industries such as automotive electronics, communication, new energy, security protection, consumer electronics, industrial electronic, medical electronics
It is widely used, the superiority and inferiority of performance is directly related to the work that can relevant device safe and reliable.
In order to guarantee work that electronic equipment can be safe and reliable, mostly in electronic equipment power source port, design DC power supply is protected
Protection circuit, for example, overvoltage protection, overcurrent protection and overheat protector etc..Wherein, since lightning stroke or DC power supply reversal connection are to cause
Press and damage the common cause of DC power supply circuit device.It in the prior art, can in order to reach direct current protection circuit
It is enough anti-lightning strike, and effect that can be anti-reverse, it is typically employed in electronic equipment power source port parallel connection Transient Suppression Diode
The scheme of (Transient Voltage Suppressor, TVS).However, TVS chip residual voltage is higher, to rear class DC power supply
The protection effect of circuit is poor, and there is a problem of that chip power-consumption is big, area is big and at high cost.
Summary of the invention
The present invention provides a kind of direct current protection circuit and electronic equipment, to realize the small-sized of direct current protection circuit
Change and improve the effect of protective performance.
In a first aspect, the embodiment of the invention provides a kind of direct current protection circuit, the direct current protection circuit
Include:
First protection branch, including concatenated semiconductor discharge tube and Transient Suppression Diode, the first protection branch
First end be electrically connected with the first DC line, it is described first protection branch second end be electrically connected with the second DC line；Institute
The first DC line access cathode voltage is stated, second DC line accesses cathode voltage；
When forward voltage between first DC line and second DC line is greater than the first predeterminated voltage, institute
Transient Suppression Diode and semiconductor discharge tube conducting are stated, the first predeterminated voltage is the clamper of the Transient Suppression Diode
The superposition of the break over voltage of voltage and the semiconductor discharge tube；Between first DC line and second DC line
Backward voltage when being greater than the second predeterminated voltage, the Transient Suppression Diode and the semiconductor discharge tube are concatenated in two
Forward diode conducting.
Optionally, the Transient Suppression Diode is unidirectional Transient Suppression Diode；The semiconductor discharge tube is unidirectional
Semiconductor discharge tube；
Wherein, the unidirectional Transient Suppression Diode protects branch to described first along the first end of the first protection branch
The direction of the second end on road is clamper direction；The unidirectional semiconductor discharge tube protects the first end of branch to institute along described first
The direction for stating the second end of the first protection branch is characteristic direction.
Optionally, the direct current protection circuit further include:
Second protection branch, the second protection branch are serially connected at least one diode；The second protection branch
First end is electrically connected with first DC line, and the second end of the second protection branch is electrically connected with second DC line
It connects；
The second protection branch is for the reversed electricity between first DC line and second DC line
When pressure is greater than third predeterminated voltage, the second protection branch conducting.
Optionally, the Transient Suppression Diode is two-way Transient Suppression Diode；The semiconductor discharge tube is two-way
Semiconductor discharge tube.
Optionally, the Transient Suppression Diode is two-way Transient Suppression Diode；The semiconductor discharge tube is reversed
Turn off semiconductor discharge tube；
Wherein, the reversed turn off semiconductor discharge tube is protected along the first end of the first protection branch to described first
The direction of the second end of branch is characteristic direction.
Optionally, the Transient Suppression Diode is unidirectional Transient Suppression Diode；The semiconductor discharge tube is reversed
Turn off semiconductor discharge tube；
Wherein, the unidirectional Transient Suppression Diode protects branch to described first along the first end of the first protection branch
The direction of the second end on road is clamper direction；First end of the reversed turn off semiconductor discharge tube along the first protection branch
Direction to the second end of the first protection branch is characteristic direction.
Optionally, the type of the diode includes: Schottky diode and fast recovery diode.
Optionally, first DC line and second DC line respectively with two power ports of power receiving equipment
Electrical connection.
Optionally, the direct current protection circuit further includes fuse, and the fuse is series at first direct current
Route or second DC line.
Second aspect is appointed on the electronic equipment using the present invention the embodiment of the invention also provides a kind of electronic equipment
The direct current protection circuit that embodiment of anticipating provides.
The present invention is electrically connected by setting the first protection branch, the first end of the first protection branch with the first DC line
It connects, the second end of the first protection branch is electrically connected with the second DC line, and first DC line and described second is directly
When forward voltage between Flow Line is greater than the first predeterminated voltage, the Transient Suppression Diode and the semiconductor discharge tube are led
Logical, first predeterminated voltage is the clamp voltage of the Transient Suppression Diode and the break over voltage of the semiconductor discharge tube
Superposition；When backward voltage between first DC line and second DC line is greater than the second predeterminated voltage, institute
Transient Suppression Diode and the semiconductor discharge tube are stated in two concatenated forward diode conductings, is solved in the prior art
Residual voltage with anti-lightning strike and counnter attack connection function direct current protection circuit is higher, poor to the protection effect of late-class circuit,
And there is a problem of that chip power-consumption is big, area is big and at high cost, it realizes and reduces the residual voltage of direct current protection circuit, reduces
Chip power-consumption, area and the cost for reducing direct current protection circuit, and on this basis, make the direct current protection circuit
Have the function of it is anti-reverse, thus realize direct current protection circuit miniaturization and improve protective performance effect.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of direct current protection circuit provided in an embodiment of the present invention；
Fig. 2 is a kind of VA characteristic curve schematic diagram of direct current protection circuit provided in an embodiment of the present invention；
Fig. 3 is a kind of VA characteristic curve schematic diagram of unidirectional Transient Suppression Diode provided in an embodiment of the present invention；
Fig. 4 is a kind of forward conduction characteristic curve of direct current protection circuit provided in an embodiment of the present invention and existing skill
The contrast schematic diagram of art；
Fig. 5 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention；
Fig. 6 is a kind of VA characteristic curve schematic diagram of unidirectional semiconductor discharge tube provided in an embodiment of the present invention；
Fig. 7 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention；
Fig. 8 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention；
Fig. 9 is a kind of VA characteristic curve schematic diagram of two-way Transient Suppression Diode provided in an embodiment of the present invention；
Figure 10 is a kind of VA characteristic curve schematic diagram of bidirectional semiconductor discharge tube provided in an embodiment of the present invention；
Figure 11 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention；
Figure 12 is a kind of VA characteristic curve schematic diagram of reversed turn off semiconductor discharge tube provided in an embodiment of the present invention；
Figure 13 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention；
Figure 14 is the structural schematic diagram of a kind of electronic equipment provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
The embodiment of the present invention provides a kind of direct current protection circuit, and the present embodiment is applicable to automotive electronics.Fig. 1 is this
A kind of structural schematic diagram for direct current protection circuit that inventive embodiments provide.Referring to Fig. 1, the direct current protection circuit packet
Include: the first protection branch 10, the first protection branch 10 include concatenated semiconductor discharge tube 11 and Transient Suppression Diode 12,
The first end of first protection branch 10 is electrically connected with the first DC line 80, the second end and the second direct current of the first protection branch 10
Route 90 is electrically connected.Wherein, the first DC line 80 accesses cathode voltage, and the second DC line 90 accesses cathode voltage.First
When forward voltage between DC line 80 and the second DC line 90 is greater than the first predeterminated voltage, 12 He of Transient Suppression Diode
Semiconductor discharge tube 11 is connected, and the first predeterminated voltage is the clamp voltage and semiconductor discharge tube 11 of Transient Suppression Diode 12
The superposition of break over voltage；Backward voltage between first DC line 80 and the second DC line 90 is greater than the second predeterminated voltage
When, Transient Suppression Diode 12 and semiconductor discharge tube 11 are in two concatenated forward diode conductings.Wherein, the second AC line
Road 90 accesses cathode voltage and is defined as 0V, and the first DC line 80 is then positive voltage, at this point, voltage direction be defined as it is of the invention
Forward voltage, that is, forward voltage is the value that 80 potential of the first DC line is higher than the second DC line 90；Similarly, when first is straight
80 potential of Flow Line is lower than the second DC line 90, and defining backward voltage is that the second DC line 90 is higher than the first DC line 80
Value.
Fig. 2 is a kind of VA characteristic curve schematic diagram of direct current protection circuit provided in an embodiment of the present invention, below
Referring to fig. 2, forward voltage of the direct current protection circuit between the first DC line 80 and the second DC line 90 is greater than
First predeterminated voltage VS1When, such as when by surge impact from first the 80 to the second DC line of DC line 90, transient state suppression
Diode 12 and semiconductor discharge tube 11 processed conducting, Transient Suppression Diode 12 is by the voltage clamping at its both ends to clamp voltage
VC2.That is, under the action of positive overvoltage, when the forward direction electricity between the first DC line 80 and the second DC line 90
When pressing the sum of the two of the clamp voltage of the break over voltage and Transient Suppression Diode 12 that reach semiconductor discharge tube 11, semiconductor
Discharge tube 11 is in the conductive state, and Transient Suppression Diode 12 is in clamping state, with this positive overvoltage of releasing.
Fig. 3 is a kind of VA characteristic curve schematic diagram of unidirectional Transient Suppression Diode provided in an embodiment of the present invention.Wink
It is a kind of high-effect protector of diode that state, which inhibits diode (Transient Voltage Suppressor, TVS),
Part.It, can will be between two electrodes when the electrode at 12 both ends of Transient Suppression Diode is by transient state forward direction impacting with high pressure referring to Fig. 3
High impedance become Low ESR, absorb surge power, make two interelectrode voltage clampings in clamp voltage VC；When transient state inhibits two
When the electrode at 12 both ends of pole pipe is impacted by transient state high back voltage, Transient Suppression Diode 12 is connected, and the two of one-way conduction are presented
Pole pipe characteristic, conduction voltage drop VF1；To protect the component in DC power supply 100 from the damage of the surge voltages such as lightning stroke.
It should be noted that semiconductor discharge tube 11 (Thyristor Surge Suppresser, TSS) is to utilize brilliant lock
Made of pipe principle, electric discharge is connected by the breakdown current trigger device of PN junction.That is the conducting of semiconductor discharge tube 11 is crystal
Pipe positive feedback adds diode avalanche to puncture, therefore can flow through very big surge current or pulse current.When applied voltage is greater than
When the break over voltage of semiconductor discharge tube 11, semiconductor discharge tube 11 quickly enters on state, the conduction voltage drop very little.With half
Conductive discharge pipe is compared, and the residual voltage of Transient Suppression Diode is higher.In the prior art only with Transient Suppression Diode, make
The energy for using late-class circuit 100 is larger, which can charge to the electrolytic capacitor in late-class circuit 100, or even cause
Electrolytic capacitor damage.Therefore, under identical protection class, direct current protection circuit provided in an embodiment of the present invention can be adopted
With the model of the lesser Transient Suppression Diode of clamp voltage.For example, the voltage class of DC power supply is 12V, DC power supply is protected
The degree of protection of 18V may be implemented in protection circuit, i.e., when the forward voltage between the first DC line 80 and the second DC line 90
When more than 18V, the first protection branch 10 is connected.According to scheme in the prior art, need to be arranged a clamp voltage VCFor
The Transient Suppression Diode of 18V.Referring to fig. 4, characteristic curve when dotted line 70 is prior art forward conduction.According to the present invention
Transient Suppression Diode 11 and a turnover electricity that a clamp voltage is 12V can be set in the technical solution that embodiment provides
Pressure is the semiconductor discharge tube 12 of 6V, and the degree of protection of 18V is reached with this.With continued reference to Fig. 4, solid line 60 is the embodiment of the present invention
Characteristic curve when the direct current protection circuit forward conduction of offer.Direct current protection circuit conducting moment, two
The voltage at end rises to voltage VS1, then fall below voltage VC2.This is because conduction voltage drop of the semiconductor discharge tube in conducting
It is almost nil, voltage VC2The predominantly clamp voltage 12V of Transient Suppression Diode.As can be seen from Figure, with prior art phase
Than semiconductor discharge tube 11 and the series connection of Transient Suppression Diode 12 can make under identical protection class, reduce direct current and protect
The residual voltage of protection circuit, i.e. VC2<VC, better protective effect is played to late-class circuit 100.
With continued reference to Fig. 2, it is default that the backward voltage between the first DC line 80 and the second DC line 90 is greater than second
Voltage VF3When, Transient Suppression Diode 12 and semiconductor discharge tube 11 are in diode current flow state.That is, in the first direct current
Under the action of inverse overvoltage between route 80 and the second DC line 90, semiconductor discharge tube 11 and Transient Suppression Diode
12 are presented the diode characteristic of one-way conduction.The diode characteristic of one-way conduction is, when between the anode and cathode of diode
Voltage (i.e. forward conduction voltage) very hour, the electric current for flowing through diode is almost nil；When forward conduction voltage is more than
When dead zone voltage, the electric current for flowing through diode starts to increase rapidly.The size of the dead zone voltage and the material of diode and temperature
The factors such as degree are related.Generally, the dead zone voltage of silicon diode is about 0.7V, and the dead zone voltage of germanium diode is about 0.2V.
In embodiments of the present invention, reversed pressure drop is that two diode forward conducting voltages are cumulative.Due to semiconductor discharge tube 11 and wink
The voltage that state inhibits the diode forward conducting direction of diode 12 to bear is smaller, the second predeterminated voltage VF3Also smaller, generally not
More than the sum of the dead zone voltage of two series diodes, which can play preferable anti-reverse effect.Counnter attack
It connects and refers to that the first DC line 80 accesses cathode voltage, the second DC line 90 accesses cathode voltage.General first AC line
Road 80 connects electronic equipment power source port anode, and the second DC line 90 connects electronic equipment power source port cathode, at this point, will likely make
It is damaged at electronic equipment late-class circuit.And technical solution provided in an embodiment of the present invention, it can be by the first DC line 80 and
Backward voltage limitation between two DC lines 90 in smaller range, such as is limited to the second predeterminated voltage VF3, play preferably
Anti-reverse effect.In addition, the chip area of Transient Suppression Diode 12 is larger, and higher cost, become obstruction DC power supply
Protect the miniaturization and a cost effective main cause of circuit.Technical solution provided in an embodiment of the present invention, due to partly leading
The on-state thermal losses of body discharge tube 11 is smaller, negotiability is strong, and therefore, the chip area of semiconductor discharge tube 11 is smaller, cost
It is lower, be conducive to the miniaturization of direct current protection circuit and cost effective.
To sum up, the technical solution of the present embodiment protects branch 10 by setting first, and the first of the first protection branch 10
End is electrically connected with the first DC line 80, this first protects the second end of branch 10 to be electrically connected with the second DC line 90, this
Forward voltage between one DC line 80 and second DC line 90 is greater than the first predeterminated voltage VS1When, transient state inhibits two
Pole pipe 12 and semiconductor discharge tube 11 are connected, and Transient Suppression Diode 12 is by the voltage clamping at its both ends to clamp voltage VC2；The
Backward voltage between one DC line 80 and the second DC line 90 is greater than the second predeterminated voltage VF3When, Transient Suppression Diode
12 and semiconductor discharge tube 11 be in diode current flow, solve direct current in the prior art with anti-lightning strike and counnter attack connection function
The residual voltage of protection circuit is higher, poor to the protection effect of 100 circuit of late-class circuit, and there are chip power-consumptions big, area
Big and at high cost problem realizes and reduces the residual voltage of direct current protection circuit, reduces chip power-consumption, area and reduce direct current
The cost of power protecting circuit, and on this basis, have the function of the direct current protection circuit anti-reverse, thus real
The miniaturization of existing direct current protection circuit and the effect of multiple-protection.
Fig. 5 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention.Referring to Fig. 5,
On the basis of above-mentioned each technical solution, which is unidirectional Transient Suppression Diode；The semiconductor discharge tube
11 be unidirectional semiconductor discharge tube.Wherein, unidirectional Transient Suppression Diode is protected along the first end of the first protection branch 10 to first
The direction for protecting the second end of branch 10 is clamper direction；Unidirectional semiconductor discharge tube along the first protection branch 10 first end to the
The direction of the second end of one protection branch 10 is characteristic direction.
Fig. 6 is a kind of VA characteristic curve schematic diagram of unidirectional semiconductor discharge tube provided in an embodiment of the present invention.Referring to
Fig. 6, when additional forward voltage is greater than the break over voltage V of unidirectional semiconductor discharge tubeSWhen, unidirectional semiconductor discharge tube quickly enters
Characteristic direction, conduction voltage drop VTVery little plays protective effect to late-class circuit 100.When additional backward voltage is greater than unidirectionally
The breakdown reverse voltage V of semiconductor discharge tubeF2When, unidirectional semiconductor discharge tube quickly enters diode forward on state.It is single
To Transient Suppression Diode VA characteristic curve and working characteristics referring to Fig. 3.According to Such analysis it is found that the technical solution
The VA characteristic curve in Fig. 2 may be implemented, therefore, under identical protection class, the DC power supply of the technical program offer
The clamp voltage V for the Transient Suppression Diode for protecting circuit to useCIt is smaller.It realizes and reduces the residual of direct current protection circuit
Pressure reduces chip power-consumption, area and the cost for reducing direct current protection circuit, and on this basis, makes the DC power supply
Circuit is protected to have the function of anti-reverse, to realize the miniaturization of direct current protection circuit and improve the effect of protective performance
Fruit.
Fig. 7 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention.Referring to Fig. 7,
On the basis of above-mentioned each technical solution, the direct current protection circuit further include: the second protection branch 20, the second protection branch
20 are serially connected at least one diode 21；The first end of second protection branch 20 is electrically connected with the first DC line 80, and second protects
The second end of shield branch 20 is electrically connected with the second DC line 90；Second protection branch 20 is used in the first DC line 80 and the
When backward voltage between two DC lines 90 is greater than third predeterminated voltage, the second protection branch 20 is connected.Wherein, the third is pre-
If voltage is positive number.According to Such analysis it is found that the VA characteristic curve in Fig. 2, Yi Ji also may be implemented in the technical solution
Two protection branch 20 settings in this way can make when the electric voltage reverse-connection between the first DC line 80 and the second DC line 90,
It is diode forward conducting voltage by the residual voltage between second the 90 to the first DC line of DC line 80, so that the DC power supply
Protect the on-state loss of circuit smaller.
The embodiment of the present invention is not defined the type of the diode 21, and optionally, the type of the diode 21 includes:
Schottky diode and fast recovery diode.
Fig. 8 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention.Referring to Fig. 8,
On the basis of above-mentioned each technical solution, which is two-way Transient Suppression Diode；The semiconductor discharge tube
11 be bidirectional semiconductor discharge tube.Wherein, the VA characteristic curve of two-way Transient Suppression Diode is referring to Fig. 9, when two-way transient state
Inhibit diode both ends electrode by transient state forward or backwards impacting with high pressure when, two interelectrode high impedances can be become low
Impedance absorbs surge power, makes two interelectrode voltage clampings in clamp voltage VC.The C-V characteristic of bidirectional semiconductor discharge tube
Curve is referring to Figure 10, when the electrode at bidirectional semiconductor discharge tube both ends is higher than break over voltage V by voltage forward or backwardsSWhen,
Bidirectional semiconductor discharge tube quickly enters on state, conduction voltage drop VTVery little, so that the technical solution is realized in Fig. 2
VA characteristic curve.
Figure 11 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention.Referring to Figure 11,
On the basis of above-mentioned each technical solution, which is two-way Transient Suppression Diode；Semiconductor electric discharge
Pipe 12 is reversed turn off semiconductor discharge tube.Wherein, first end of the reversed turn off semiconductor discharge tube along the first protection branch 10
Direction to the second end of the first protection branch 10 is characteristic direction.The VA characteristic curve ginseng of reversed turn off semiconductor discharge tube
Figure 12 is seen, when the electrode at reversed turn off semiconductor discharge tube both ends is higher than break over voltage V by forward voltageSWhen, it is two-way partly to lead
Body discharge tube quickly enters on state, conduction voltage drop VTVery little.When reversed turn off semiconductor discharge tube both ends electrode by
To when high back voltage impact, which is in off state, and high back voltage can be let out by the second protection branch 20
It puts；The high back voltage is caused to be more than the reversed blanking voltage of reversed turn off semiconductor discharge tube if the second protection branch 20 damages
VF4, reversed turn off semiconductor discharge tube damages because of breakdown.The unidirectional through-current capability of reversed turn off semiconductor discharge tube is stronger, i.e.,
By identical electric current, chip area is smaller, further reduces the chip area of direct current protection circuit.
Optionally, Transient Suppression Diode 11 can also be unidirectional Transient Suppression Diode；Semiconductor discharge tube 12 is anti-
To turn off semiconductor discharge tube.Wherein, unidirectional Transient Suppression Diode is protected along the first end of the first protection branch 10 to first
The direction of the second end of branch 10 is clamper direction；Reversed turn off semiconductor discharge tube is arrived along the first end of the first protection branch 10
The direction of the second end of first protection branch 10 is characteristic direction.
Figure 13 is the structural schematic diagram of another direct current protection circuit provided in an embodiment of the present invention.Referring to Figure 13,
On the basis of above-mentioned each technical solution, which further includes fuse 81, and fuse uses fuse, when
When the electrode at direct current protection circuit both ends is impacted by high back voltage, the first protection branch 10 is connected, and fuse 81 is heated
Fusing, cuts off the high back voltage, to protect DC power supply not damaged.
On the basis of above-mentioned each technical solution, the first DC line 80 and the second DC line 90 respectively with power receiving equipment
Two power ports electrical connection.
The embodiment of the invention provides a kind of electronic equipment, Figure 14 is a kind of electronic equipment provided in an embodiment of the present invention
Structural schematic diagram, the electronic equipment include the direct current protection circuit that any embodiment of that present invention provides.Such as the electronics is set
The standby computer that can be in the devices such as automotive electronics, communication, new energy, security protection, consumer electronics, industrial electronic, medical electronics is led
Navigate instrument or camera etc..Electronic equipment provided in an embodiment of the present invention includes the direct current protection circuit in above-described embodiment,
Therefore electronic equipment provided in an embodiment of the present invention also has beneficial effect described in above-described embodiment.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of direct current protection circuit characterized by comprising
First protection branch, including concatenated semiconductor discharge tube and Transient Suppression Diode, the of the first protection branch
One end is electrically connected with the first DC line, and the second end of the first protection branch is electrically connected with the second DC line；Described
One DC line accesses cathode voltage, and second DC line accesses cathode voltage；
When forward voltage between first DC line and second DC line is greater than the first predeterminated voltage, the wink
State inhibits diode and semiconductor discharge tube conducting, and first predeterminated voltage is the clamper of the Transient Suppression Diode
The superposition of the break over voltage of voltage and the semiconductor discharge tube；Between first DC line and second DC line
Backward voltage when being greater than the second predeterminated voltage, the Transient Suppression Diode and the semiconductor discharge tube are concatenated in two
Forward diode conducting.
2. circuit according to claim 1, which is characterized in that the Transient Suppression Diode is that unidirectional transient state inhibits two poles
Pipe；The semiconductor discharge tube is unidirectional semiconductor discharge tube；
Wherein, the unidirectional Transient Suppression Diode protects branch to described first along the first end of the first protection branch
The direction of second end is clamper direction；The unidirectional semiconductor discharge tube along the first protection branch first end to described the
The direction of the second end of one protection branch is characteristic direction.
3. circuit according to claim 1, which is characterized in that further include:
Second protection branch, the second protection branch are serially connected at least one diode；The first of the second protection branch
End is electrically connected with first DC line, and the second end of the second protection branch is electrically connected with second DC line；
Backward voltage of the second protection branch between first DC line and second DC line is big
When third predeterminated voltage, the second protection branch conducting.
4. circuit according to claim 3, which is characterized in that the Transient Suppression Diode is that two-way transient state inhibits two poles
Pipe；The semiconductor discharge tube is bidirectional semiconductor discharge tube.
5. circuit according to claim 3, which is characterized in that the Transient Suppression Diode is that two-way transient state inhibits two poles
Pipe；The semiconductor discharge tube is reversed turn off semiconductor discharge tube；
Wherein, the reversed turn off semiconductor discharge tube protects branch to described first along the first end of the first protection branch
Second end direction be characteristic direction.
6. circuit according to claim 3, which is characterized in that the Transient Suppression Diode is that unidirectional transient state inhibits two poles
Pipe；The semiconductor discharge tube is reversed turn off semiconductor discharge tube；
Wherein, the unidirectional Transient Suppression Diode protects branch to described first along the first end of the first protection branch
The direction of second end is clamper direction；The reversed turn off semiconductor discharge tube protects the first end of branch to institute along described first
The direction for stating the second end of the first protection branch is characteristic direction.
7. according to any circuit of claim 3-6, which is characterized in that the type of the diode includes: Schottky two
Pole pipe and fast recovery diode.
8. circuit according to claim 1, which is characterized in that first DC line and second DC line point
It is not electrically connected with two power ports of power receiving equipment.
9. circuit according to claim 1, which is characterized in that further include fuse, the fuse is series at described
One DC line or second DC line.
10. a kind of electronic equipment, which is characterized in that use any direct current of claim 1-9 on the electronic equipment
Protection circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711387651.0A CN109950888A (en) | 2017-12-20 | 2017-12-20 | A kind of direct current protection circuit and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711387651.0A CN109950888A (en) | 2017-12-20 | 2017-12-20 | A kind of direct current protection circuit and electronic equipment |
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| CN109950888A true CN109950888A (en) | 2019-06-28 |
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| CN201711387651.0A Pending CN109950888A (en) | 2017-12-20 | 2017-12-20 | A kind of direct current protection circuit and electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024178709A1 (en) * | 2023-03-02 | 2024-09-06 | Vishay General Semiconductor , Llc | Transient voltage suppression device with clamping characteristic |
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| EP0360933A1 (en) * | 1988-09-28 | 1990-04-04 | Semitron Industries Limited | An improved transient suppression device |
| CN103795045A (en) * | 2012-10-31 | 2014-05-14 | 华为技术有限公司 | Protective device |
| CN104269835A (en) * | 2014-09-19 | 2015-01-07 | 华为技术有限公司 | Protection device, electronic equipment and power supply |
| CN106786459A (en) * | 2016-12-28 | 2017-05-31 | 东莞市阿甘半导体有限公司 | Surge protection circuit and the electronic installation using the circuit |
| CN107196282A (en) * | 2017-07-14 | 2017-09-22 | 力特半导体（无锡）有限公司 | A kind of Surge Protector |
| CN207868791U (en) * | 2017-12-20 | 2018-09-14 | 东莞市阿甘半导体有限公司 | A kind of direct current protection circuit and electronic equipment |
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| EP0360933A1 (en) * | 1988-09-28 | 1990-04-04 | Semitron Industries Limited | An improved transient suppression device |
| CN103795045A (en) * | 2012-10-31 | 2014-05-14 | 华为技术有限公司 | Protective device |
| CN104269835A (en) * | 2014-09-19 | 2015-01-07 | 华为技术有限公司 | Protection device, electronic equipment and power supply |
| CN106786459A (en) * | 2016-12-28 | 2017-05-31 | 东莞市阿甘半导体有限公司 | Surge protection circuit and the electronic installation using the circuit |
| CN107196282A (en) * | 2017-07-14 | 2017-09-22 | 力特半导体（无锡）有限公司 | A kind of Surge Protector |
| CN207868791U (en) * | 2017-12-20 | 2018-09-14 | 东莞市阿甘半导体有限公司 | A kind of direct current protection circuit and electronic equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024178709A1 (en) * | 2023-03-02 | 2024-09-06 | Vishay General Semiconductor , Llc | Transient voltage suppression device with clamping characteristic |
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Effective date of registration: 20191029 Address after: 243000 south of workshop 1, building 5, 2189 Huxi South Road, Ma'anshan economic and Technological Development Zone, Ma'anshan City, Anhui Province Applicant after: MAANSHAN Penang Electronics Co., Ltd Address before: 523808 Dongguan 111, 112B, 112C, 112D room, venture capital building, 8 Industrial South Road, Songshan Lake, Guangdong, China. Applicant before: Dongguan Agam Semiconductor Co., Ltd. |