CN109103865A - A kind of power supply overvoltage protection circuit of high pressure barricade - Google Patents
A kind of power supply overvoltage protection circuit of high pressure barricade Download PDFInfo
- Publication number
- CN109103865A CN109103865A CN201811196850.8A CN201811196850A CN109103865A CN 109103865 A CN109103865 A CN 109103865A CN 201811196850 A CN201811196850 A CN 201811196850A CN 109103865 A CN109103865 A CN 109103865A
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- Prior art keywords
- voltage
- high pressure
- protective module
- power supply
- inductance
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/005—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
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- Protection Of Static Devices (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
DC power supply high pressure over-voltage protection technology field more particularly to a kind of power supply overvoltage protection circuit based on high pressure barricade the present invention relates to industry spot using instrument.Including sequentially connected surge protection and absorption module, overcurrent and anti-reverse protective module and high voltage protective module; surge protection and absorption module protect and filter out the common mode and DM EMI signal in route for transient overvoltage; overcurrent and anti-reverse protective module are for preventing reverse power connection damage and overcurrent protection; high voltage protective module is used to carry out clamper to peak voltage, so that back-end circuit voltage is clamped.High voltage protective module of the invention makes the voltage-stabiliser tube reverse breakdown when there is high-voltage signal; so that the voltage clamping after high pressure barricade circuit is within the scope of reliable voltage; to improve the job stability of entire circuit; scene substantially increases the reliability of industrial instrument DC power supply and the practicability at scene without frequently parking.
Description
Technical field
The present invention relates to the DC power supply high pressure over-voltage protection technology fields that industry spot uses instrument, more particularly to one kind
Power supply overvoltage protection circuit based on high pressure barricade.
Background technique
The start and stop of industry spot miscellaneous processing equipment and power-equipment, such as electric welding, frequency conversion equipment.These interference
It can be applied to the system and instrument at scene with electromagnetism field type, can also be interfered by power supply intrusion system.And pass through electricity
It is most direct for interfering caused by source, even destructive.Therefore, the reliability of industry control field device and instrument is improved,
First have to guarantee the reliability of power supply.
Although the failure of DC power supply output over-voltage is less, overvoltage has destructiveness, most effective overvoltage protection
Measure is using packet routing device, such as pressure-sensitive or TVS.Not only can with power supply overvoltage protection, can also absorb power supply because
Overvoltage spike caused by lightning stroke or interference.But pressure-sensitive device is affected by temperature big, residual voltage height, for example, nominal 46V
Varistor residual voltage be possible to reach 65V, the spike of residual voltage is even higher, reaches 100V or more, considerably beyond normal use
When voltage range, cause component damage;And the reasons such as TVS device absorption power is smaller, unit price is relatively high, field of employment
There are limitations.
Using above several DC power supply overvoltage protection modes, scene can still have hardware damage, software faults and electricity
The various risks such as magnetic disturbance or even personal injury.
Field effect transistor is divided into depletion field effect transistor and enhanced field-effect tube, depletion field effect transistor VGSIt is zero
When, source electrode and drain electrode can be connected, and only work as VGSFor a certain negative value, source electrode and drain electrode cut-off;Enhanced field-effect tube VGSFor
When positive value, source electrode and drain electrode can be just connected, and work as VGSWhen being zero, source electrode and drain electrode cut-off.
Summary of the invention
It is not only simple and reliable but also good and cheap the present invention provides a kind of power supply overvoltage protection circuit based on high pressure barricade
The design of DC power supply high pressure overvoltage protection so that the voltage clamping after high pressure barricade circuit is within the scope of reliable voltage,
To improve the job stability of entire circuit, without frequently parking, substantially increase industrial instrument DC power supply can at scene
By the practicability of property and scene.
In order to achieve the object of the present invention, used technical solution is: a kind of power supply overvoltage protection electricity of high pressure barricade
Road, including sequentially connected surge protection and absorption module, overcurrent and anti-reverse protective module and high voltage protective module, surge are protected
Shield and absorption module protect and filter out the common mode and DM EMI signal in route, overcurrent and anti-reverse guarantor for transient overvoltage
For preventing reverse power connection damage and overcurrent protection, high voltage protective module is used to carry out clamper to peak voltage shield module, so that
Back-end circuit voltage is clamped;High voltage protective module includes voltage-stabiliser tube Z1 or TVS pipe and transistor or field-effect tube, surely
Pressure pipe Z1 or TVS pipe are connected between transistor or field-effect tube and ground.
As prioritization scheme of the invention, high voltage protective module further includes first resistor R1, and field-effect tube exhausts for N-channel
The drain electrode of type field-effect tube Q1, N-channel depletion field effect transistor Q1 are connected with the output end of overcurrent and anti-reverse protective module, N
The source electrode of channel depletion type field-effect tube Q1 is connected with power output end, the both ends of first resistor R1 respectively with N-channel depletion type
The grid of field-effect tube Q1 is connected with source electrode, and voltage-stabiliser tube Z1 is connected between the grid and ground of N-channel depletion field effect transistor Q1.
As prioritization scheme of the invention, high voltage protective module further includes the 4th capacitor C4 and electrolytic capacitor C3, the 4th electricity
Hold C4 to be connected between the grid and ground of N-channel depletion field effect transistor Q1, electrolytic capacitor C3 is connected to power output end and ground
Between.
As prioritization scheme of the invention, high voltage protective module further includes second resistance R2, and field-effect tube is N-channel enhancing
Type field-effect tube Q2, second resistance R2 are connected between the grid and drain electrode of N-channel enhancement mode FET Q2, and voltage-stabiliser tube Z1 connects
It connects between the grid and ground of N-channel enhancement mode FET Q2.
As prioritization scheme of the invention, high voltage protective module further includes the 5th capacitor C5 and electrolytic capacitor C6, the 5th electricity
Hold C5 to be connected between the grid and ground of N-channel enhancement mode FET Q2, electrolytic capacitor C6 is connected to power output end and ground
Between.
As prioritization scheme of the invention, high voltage protective module further includes 3rd resistor R3, and transistor is bipolar
Transistor npn npn Q3,3rd resistor R3 are connected between the base stage and collector of bipolar junction transistor Q3, and voltage-stabiliser tube Z1 is connected to double
Between the base stage and ground of bipolar transistor Q3.
As prioritization scheme of the invention, high voltage protective module further includes electrolytic capacitor C7, and electrolytic capacitor C7 is connected to electricity
Between source output terminal and ground.
As prioritization scheme of the invention, surge protection and absorption module include varistor VDR1, the first inductance L1,
Two inductance L2, third inductance L3, first capacitor C1 and the second capacitor C2, the varistor VDR1 are connected to power input
Between ground, the input both ends of the first inductance L1 are separately connected power input and ground, and first capacitor C1 is connected to the first inductance
Between the output both ends of L1, the second inductance L2 and third inductance L3 are connected respectively to the output both ends of the first inductance L1, the second electricity
Hold C2 and is connected to the output end of the second inductance L2 and the output end of third inductance L3.
As prioritization scheme of the invention, overcurrent and anti-reverse protective module include fuse F1 and diode D1, insurance
One end of silk F1 is connected with the output end of the second inductance L2, the anode of the other end connection diode D1 of fuse F1, diode
The cathode of D1 connects high voltage protective module.
The present invention has the effect of positive: 1) present invention employs second level high pressure overvoltage protections, and first order protection is surge
Protection and absorption module varistor, when supply voltage over-voltage and be greater than varistor nominal voltage when, varistor is fast
Speed breakdown conducting;Second level protection is high voltage protective module, the voltage-stabiliser tube reverse breakdown when there is high-voltage signal, to residual spikes electricity
Pressure carries out reliable clamper, guarantees that back-end circuit voltage stabilization is reliable;
2) present invention proposes a kind of not only simple and reliable, but also saves the DC power supply high pressure overvoltage protection design of cost, so that
Voltage clamping after high pressure barricade circuit is within the scope of reliable voltage, so that the job stability of entire circuit is improved, it is existing
Without frequently parking, substantially increase industrial instrument DC power supply reliability and scene practicability;
3) device of the present invention is also easier type selecting, buying and production and processing, and oneself power consumption is lower, favorably
In improving power-efficient, overvoltage protection effect is good, and over-voltage trouble free service has preferable safety to protect without parking, to industrial production
Barrier effect, promotes working efficiency.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is whole functional block diagram of the invention;
Fig. 2 is first embodiment of the present invention circuit structure diagram;
Fig. 3 is second embodiment of the present invention circuit structure diagram;
Fig. 4 is third embodiment of the present invention circuit structure diagram.
Wherein: 1, surge protection and absorption module, 2, overcurrent and anti-reverse protective module, 3, high voltage protective module.
Specific embodiment
As shown in Figure 1, the invention discloses a kind of power supply overvoltage protection circuit of high pressure barricade, including sequentially connected wave
Protection and absorption module 1, overcurrent and anti-reverse protective module 2 and high voltage protective module 3 are gushed, surge protection and absorption module 1 are used
In transient overvoltage the common mode and DM EMI signal in route, overcurrent and anti-reverse protective module 2 are protected and filtered out for preventing
Only reverse power connection damage and overcurrent protection, high voltage protective module 3 is used to carry out clamper to peak voltage, so that back-end circuit voltage
It is clamped;High voltage protective module 3 includes voltage-stabiliser tube Z1 or TVS pipe and transistor or field-effect tube, voltage-stabiliser tube Z1 or TVS
Pipe is connected between transistor or field-effect tube and ground.Wherein, high voltage protective module 3 is high pressure barricade.
As in Figure 2-4, surge protection and absorption module 1 include varistor VDR1, the first inductance L1, the second inductance
L2, third inductance L3, first capacitor C1 and the second capacitor C2, varistor VDR1 are connected between power input and ground, the
The input both ends of one inductance L1 are separately connected power input and ground, and first capacitor C1 is connected to the output both ends of the first inductance L1
Between, the second inductance L2 and third inductance L3 are connected respectively to the output both ends of the first inductance L1, and the second capacitor C2 is separately connected
In the output end of the second inductance L2 and the output end of third inductance L3.Varistor VDR1 is mainly used in transient overvoltage guarantor
Shield, when circuit over-voltage, carry out voltage clamping, absorb extra electric current to protect back end device, when supply voltage over-voltage, and it is big
When the nominal voltage of varistor VDR1, varistor VDR1 punctures rapidly conducting.First inductance L1, the second inductance L2,
The combination of three inductance L3, first capacitor C1 and the second capacitor C2 have filtered out common mode in route, DM EMI signal, in circuit
The electric current of suddenly change is inhibited, improves the EMC protective capacities of port.
Overcurrent and anti-reverse protective module 2 include fuse F1 and diode D1, one end of fuse F1 and the second inductance
The output end of L2 is connected, and the anode of the other end connection diode D1 of fuse F1, the cathode of diode D1 connects high voltage protective
Module 3.Prevent reverse power connection from damaging using the one-way conduction of diode D1, when circuit load is overweight, electric current further increases
Greatly, fuse F1 will fuse rapidly, avoid the generation of fire and peril.
Embodiment one
As shown in Fig. 2, high voltage protective module 3 further includes first resistor R1, field-effect tube is N-channel depletion field effect transistor
The drain electrode of Q1, N-channel depletion field effect transistor Q1 are connected with the output end of overcurrent and anti-reverse protective module 2, N-channel depletion type
The source electrode of field-effect tube Q1 is connected with power output end, the both ends of first resistor R1 respectively with N-channel depletion field effect transistor Q1
Grid be connected with source electrode, voltage-stabiliser tube Z1 is connected between the grid and ground of N-channel depletion field effect transistor Q1.High voltage protective mould
Block 3 further includes the 4th capacitor C4 and electrolytic capacitor C3, the 4th capacitor C4 be connected to N-channel depletion field effect transistor Q1 grid and
Between ground, electrolytic capacitor C3 is connected between power output end and ground.N-channel depletion field effect transistor Q1 is in metastable
Constant current area, Id(drain current) is constant, VGS(gate source voltage) is constant;When grid voltage is more than voltage-stabiliser tube Z1 pressure stabilizing value,
Voltage-stabiliser tube Z1 breakdown conducting, has carried out clamper to grid potential, with by high peak voltage breakdown, the voltage of power output end will not
Always it is clamped no more than Uz+VGS, wherein UzIt is the pressure stabilizing value of voltage-stabiliser tube.N-channel depletion field effect transistor Q1 works as VGSWhen=0,
Channel is formed, V is gradually increasedGSWhen, that is, channel is formed, V is gradually increasedGSWhen, majority carrier flows out channel, thus exhausts
Carrier makes N-channel depletion field effect transistor Q1 turn to cut-off.The V of usual depletion field effect transistor Q1GSMaximum value about -2V
Left and right.
Embodiment two
As shown in figure 3, high voltage protective module 3 further includes second resistance R2, field-effect tube is N-channel enhancement mode FET
Q2, second resistance R2 are connected between the grid and drain electrode of N-channel enhancement mode FET Q2, and voltage-stabiliser tube Z1 is connected to N-channel
Between the grid and ground of enhanced field-effect tube Q2.High voltage protective module 3 further includes the 5th capacitor C5 and electrolytic capacitor C6, and the 5th
Capacitor C5 is connected between the grid and ground of N-channel enhancement mode FET Q2, electrolytic capacitor C6 be connected to power output end and
Between ground.As long as the supply voltage of power input is no more than the V of N-channel enhancement mode FET Q2DS(drain-source voltage), power supply
The voltage of output end will be clamped always no more than UZ+VGS, N-channel enhancement mode FET Q2 need to add certain grid voltage it
Just there is drain current afterwards, so a lesser voltage superposition is introduced on original grid voltage by back-end circuit, so that grid
Pole tension is higher than source voltage, guarantees that input power one powers on, circuit can be connected.
For the N-channel depletion field effect transistor Q1 and N-channel enhancement mode FET in embodiment one and embodiment two
Q2 can choose RDS(resistance between FET drain and source electrode) model as small as possible, voltage loss is small, is more advantageous to
Promote power-efficient.Also it can choose VDSThe bigger N-channel field-effect tube of voltage, in this way to improve port over-voltage protection and
The ability of EMC protection is beneficial.Such as the V of selection 600VDSVoltage field-effect tube, even if considering device drop volume, also very easily
Apply the DC suppling equipment used in most 250V AC industry control occasion.
Because of the presence of big capacity electrolyte capacitor, power supply electrifying overshoot, power supply can not start or burn device in order to prevent
Part, circuit have used delay startup design, pass through RC circuit (first resistor R1, the 4th capacitor C4) and (second resistance R2, electrolysis electricity
Hold C6) it charges respectively to electrolytic capacitor C3 and electrolytic capacitor C6, charging current is generated, in first resistor R1 or second resistance
High voltage is formed on R2, field-effect tube is not turned on, with the reduction of charging current, when on first resistor R1 or second resistance R2
Voltage is as low as to a certain degree, field-effect tube VGSVoltage reduces, and begins to turn on work.
Embodiment three
High voltage protective module 3 further includes 3rd resistor R3, and transistor is bipolar junction transistor Q3,3rd resistor R3
It is connected between the base stage and collector of bipolar junction transistor Q3, voltage-stabiliser tube Z1 is connected to the base stage and ground of bipolar junction transistor Q3
Between.High voltage protective module 3 further includes electrolytic capacitor C7, and electrolytic capacitor C7 is connected between power output end and ground.Power supply electricity
When being pressed in normal range of operation, bipolar junction transistor Q3 works in amplification region, and power circuit normally exports;When supply voltage is more than
After the pressure stabilizing value of voltage-stabiliser tube Z1, the U of bipolar junction transistor Q3be(voltage between base stage and emitter) is less than 0.7V (germanium tube
UbeLess than 0.3V), bipolar junction transistor Q3 cut-off, output end no-voltage.
The electric current selection of bipolar junction transistor Q3 needs bigger than the electric current in power circuit, and normal use is contemplated that 2/3
Design of Reducing Rating.The design for increasing radiating surface is please noted that when PCB fabric swatch simultaneously, or increases heat sink design
The selection of first resistor R1, the second resistance R2 and 3rd resistor R3 of above three embodiments and the power of itself have
It closes,
R=(Umax-Uz)2/PR rated value
Wherein, UmaxIt is that power circuit is possible to the ceiling voltage occurred, UzIt is the pressure stabilizing value of voltage-stabiliser tube.First resistor R1,
Second resistance R2 and 3rd resistor R3 need to select suitable power according to supply voltage range, and avoiding voltage-stabiliser tube Z1 is more than to use function
Rate range.
The power selection of voltage-stabiliser tube Z1 can multiply first resistor R1, second resistance R2 or 3rd resistor R3's according to pressure stabilizing value
Current value (Umax-Uz)/R is calculated.
To electrolytic capacitor C3, electrolytic capacitor C6 or electrolytic capacitor C7, preferably long-life, large capacity, Low ESR electrolytic capacitor
The power supply trouble that Voltage Drop and short interruptions occur can effectively be solved.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (9)
1. a kind of power supply overvoltage protection circuit of high pressure barricade, it is characterised in that: including sequentially connected surge protection and absorption
Module (1), overcurrent and anti-reverse protective module (2) and high voltage protective module (3), the surge protection and absorption module (1)
The common mode and DM EMI signal in route, the overcurrent and anti-reverse protective module are protected and filtered out for transient overvoltage
(2) for preventing, reverse power connection from being damaged and overcurrent protection, the high voltage protective module (3) are used to clamp peak voltage
Position, so that back-end circuit voltage is clamped;The high voltage protective module (3) includes voltage-stabiliser tube Z1 or TVS pipe and semiconductor three
Pole pipe or field-effect tube, the voltage-stabiliser tube Z1 or TVS pipe are connected between transistor or field-effect tube and ground.
2. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 1, it is characterised in that: the high pressure
Protective module (3) further includes first resistor R1, and the field-effect tube is N-channel depletion field effect transistor Q1, N-channel depletion type
The drain electrode of field-effect tube Q1 is connected with the output end of overcurrent and anti-reverse protective module (2), N-channel depletion field effect transistor Q1's
Source electrode is connected with power output end, the both ends of the first resistor R1 grid and source electrode with N-channel depletion field effect transistor Q1 respectively
It is connected, the voltage-stabiliser tube Z1 is connected between the grid and ground of N-channel depletion field effect transistor Q1.
3. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 2, it is characterised in that: the high pressure
Protective module (3) further includes the 4th capacitor C4 and electrolytic capacitor C3, and the 4th capacitor C4 is connected to N-channel depletion type field effect
Should be between the grid and ground of pipe Q1, the electrolytic capacitor C3 is connected between power output end and ground.
4. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 1, it is characterised in that: the high pressure
Protective module (3) further includes second resistance R2, and the field-effect tube is N-channel enhancement mode FET Q2, second resistance R2
It is connected between the grid and drain electrode of N-channel enhancement mode FET Q2, the voltage-stabiliser tube Z1 is connected to the enhanced field of N-channel
Between the grid and ground of effect pipe Q2.
5. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 4, it is characterised in that: the high pressure
Protective module (3) further includes the 5th capacitor C5 and electrolytic capacitor C6, and the 5th capacitor C5 is connected to the enhanced field effect of N-channel
Should be between the grid and ground of pipe Q2, the electrolytic capacitor C6 is connected between power output end and ground.
6. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 1, it is characterised in that: the high pressure
Protective module (3) further includes 3rd resistor R3, and the transistor is bipolar junction transistor Q3,3rd resistor R3 connection
Between the base stage and collector of bipolar junction transistor Q3, the voltage-stabiliser tube Z1 be connected to bipolar junction transistor Q3 base stage and
Between ground.
7. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 6, it is characterised in that: the high pressure
Protective module (3) further includes electrolytic capacitor C7, and the electrolytic capacitor C7 is connected between power output end and ground.
8. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 1-7, it is characterised in that: institute
The surge protection and absorption module (1) stated include varistor VDR1, the first inductance L1, the second inductance L2, third inductance L3,
One capacitor C1 and the second capacitor C2, the varistor VDR1 are connected between power input and ground, the first inductance L1's
Input both ends are separately connected power input and ground, the first capacitor C1 be connected to the first inductance L1 output both ends it
Between, the second inductance L2 and third inductance L3 are connected respectively to the output both ends of the first inductance L1, second capacitor
C2 is separately connected the output end of the second inductance L2 and the output end of third inductance L3.
9. a kind of power supply overvoltage protection circuit of high pressure barricade according to claim 8, it is characterised in that: the overcurrent
It include fuse F1 and diode D1, the output end of one end of fuse F1 and the second inductance L2 with anti-reverse protective module (2)
It is connected, the anode of the other end connection diode D1 of fuse F1, the cathode of diode D1 connects high voltage protective module (3).
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CN201811196850.8A CN109103865A (en) | 2018-10-15 | 2018-10-15 | A kind of power supply overvoltage protection circuit of high pressure barricade |
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CN201811196850.8A CN109103865A (en) | 2018-10-15 | 2018-10-15 | A kind of power supply overvoltage protection circuit of high pressure barricade |
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CN109103865A true CN109103865A (en) | 2018-12-28 |
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CN201811196850.8A Pending CN109103865A (en) | 2018-10-15 | 2018-10-15 | A kind of power supply overvoltage protection circuit of high pressure barricade |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111064165A (en) * | 2020-01-19 | 2020-04-24 | 珠海格力电器股份有限公司 | Protection circuit, frequency converter device and electrical equipment |
CN114070031A (en) * | 2021-09-29 | 2022-02-18 | 中车工业研究院有限公司 | Start control protection power input device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102222898A (en) * | 2011-06-21 | 2011-10-19 | 威海东兴电子有限公司 | Power supply output overvoltage protection circuit for LED (light emitting diode) LCD TV (liquid crystal display television) |
CN203932994U (en) * | 2013-12-24 | 2014-11-05 | 珠海派诺科技股份有限公司 | A kind of low-voltage dc power supply port surge protection circuit |
CN204012697U (en) * | 2014-09-01 | 2014-12-10 | 成都乐创自动化技术股份有限公司 | A kind of safeguard structure that is applied to laser machine internal control part power supply |
CN206685893U (en) * | 2017-01-23 | 2017-11-28 | 中国第一汽车股份有限公司 | A kind of power input protection circuit of the road vehicle controller based on discrete component |
CN207150414U (en) * | 2017-07-25 | 2018-03-27 | 四川国力科创科技有限公司 | A kind of doubleway output filter power supply of anti-lightning strike anti-surge voltage |
CN208904649U (en) * | 2018-10-15 | 2019-05-24 | 南京优倍电气有限公司 | A kind of power supply overvoltage protection circuit of high pressure barricade |
-
2018
- 2018-10-15 CN CN201811196850.8A patent/CN109103865A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102222898A (en) * | 2011-06-21 | 2011-10-19 | 威海东兴电子有限公司 | Power supply output overvoltage protection circuit for LED (light emitting diode) LCD TV (liquid crystal display television) |
CN203932994U (en) * | 2013-12-24 | 2014-11-05 | 珠海派诺科技股份有限公司 | A kind of low-voltage dc power supply port surge protection circuit |
CN204012697U (en) * | 2014-09-01 | 2014-12-10 | 成都乐创自动化技术股份有限公司 | A kind of safeguard structure that is applied to laser machine internal control part power supply |
CN206685893U (en) * | 2017-01-23 | 2017-11-28 | 中国第一汽车股份有限公司 | A kind of power input protection circuit of the road vehicle controller based on discrete component |
CN207150414U (en) * | 2017-07-25 | 2018-03-27 | 四川国力科创科技有限公司 | A kind of doubleway output filter power supply of anti-lightning strike anti-surge voltage |
CN208904649U (en) * | 2018-10-15 | 2019-05-24 | 南京优倍电气有限公司 | A kind of power supply overvoltage protection circuit of high pressure barricade |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111064165A (en) * | 2020-01-19 | 2020-04-24 | 珠海格力电器股份有限公司 | Protection circuit, frequency converter device and electrical equipment |
CN114070031A (en) * | 2021-09-29 | 2022-02-18 | 中车工业研究院有限公司 | Start control protection power input device |
CN114070031B (en) * | 2021-09-29 | 2024-03-26 | 中车工业研究院有限公司 | Start control protection power input device |
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