CN109950259A - Imaging sensor and preparation method thereof - Google Patents
Imaging sensor and preparation method thereof Download PDFInfo
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- CN109950259A CN109950259A CN201711391691.2A CN201711391691A CN109950259A CN 109950259 A CN109950259 A CN 109950259A CN 201711391691 A CN201711391691 A CN 201711391691A CN 109950259 A CN109950259 A CN 109950259A
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Abstract
The present invention is suitable for image sensor technologies field, a kind of imaging sensor and preparation method thereof is provided, pass through the microlens layer being arranged successively, flatness layer, color filter layers, circuit layer, epitaxial layer and substrate, multiple photodiodes are equipped in the epitaxial layer, the photodiode includes the first junction depth and the second junction depth, the corresponding photodiode of each colored filter in the Bayer array color filter layers, the first junction depth of the photodiode and the depth of the second junction depth corresponding to the colored filter of same color are not all different, the problem of optical crosstalk that the imaging sensor reduces adjacent pixel weakens optical crosstalk caused by colored filter light transmission simultaneously.
Description
Technical field
The invention belongs to image sensor technologies field, in particular to a kind of imaging sensor and preparation method thereof.
Background technique
Currently, as shown in Figure 1, imaging sensor includes filled layer and flatness layer 5, metal layer 4, circuit layer 3 and silicon lining
Bottom 2 is equipped with photodiode 7 in silicon substrate 2 and is electrically isolated slot 8, optical confinement layer 6 is equipped in metal layer 4, which uses
In forbidding light to penetrate, when carrying out illumination to imaging sensor, by each 7 top of photodiode light due to light every
The presence of absciss layer 6 can only be irradiated on the photodiode 7 in the pixel, and cannot be crosstalked into neighbouring other pixels up,
It can not be irradiated on photodiode 7 by the light that metal layer 4 reflects, can thus reach the mesh for reducing optical crosstalk
's.
Above-mentioned imaging sensor mainly reduces optical crosstalk by using optical confinement layer, but makes optical confinement layer not only work
Skill is complicated, and can also occupy via area reduces the fill factor of pixel, and cannot weaken colored filter light transmission institute itself
Caused optical crosstalk.
In conclusion imaging sensor in the prior art is existed using the method that optical confinement layer reduces pixel optics crosstalk
Complex manufacturing technology and cannot achieve weaken colored filter light transmission caused by pixel optics crosstalk the problem of.
Summary of the invention
The purpose of the present invention is to provide a kind of imaging sensors and preparation method thereof, it is intended to solve image in the prior art
Sensor is reduced complex manufacturing technology existing for the method for pixel optics crosstalk using optical confinement layer and cannot achieve decrease coloured silk
Caused by colo(u)r filter light transmission the problem of pixel optics crosstalk.
The invention is realized in this way first aspect present invention provides a kind of imaging sensor, described image sensor packet
The microlens layer being arranged successively, flatness layer, color filter layers, circuit layer, epitaxial layer and substrate are included, is set in the epitaxial layer
There are multiple photodiodes, the photodiode includes the first junction depth and the second junction depth, every in the color filter layers
A colored filter corresponds to a photodiode, the photodiode corresponding to the colored filter of different colours
The first junction depth and the depth of the second junction depth be all different.
Second aspect of the present invention provides a kind of production method of imaging sensor, and described image sensor includes being arranged successively
Microlens layer, flatness layer, color filter layers, circuit layer, epitaxial layer and substrate, multiple photoelectricity are equipped in the epitaxial layer
Diode, the photodiode include the first junction depth and the second junction depth, and the processing method includes:
The corresponding photodiode of each colored filter into the color filter layers injects ion, makes different face
First junction depth of the photodiode corresponding to the colored filter of color and the depth of the second junction depth are all different.
The present invention provides a kind of imaging sensor and preparation method thereof, and imaging sensor includes the lenticule being arranged successively
Layer, flatness layer, color filter layers, circuit layer, epitaxial layer and substrate, epitaxial layer is interior to be equipped with multiple photodiodes, photoelectricity
Diode includes the first junction depth and the second junction depth, corresponding two pole of photoelectricity of each colored filter in color filter layers
Pipe, the not depth of the first junction depth of photodiode corresponding to the colored filter of same color and the second junction depth not phase
Together, different by the way that the depth of the first junction depth of photodiode and the second junction depth to be arranged, colored filter itself can be weakened
Crosstalk caused by light transmission avoids physically production optical confinement layer bring complicated technology, while reducing adjacent pixel light
Bring crosstalk.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the schematic diagram of the section structure of imaging sensor in the prior art；
Fig. 2 is the schematic diagram of the section structure of imaging sensor provided by one embodiment of the invention；
Fig. 3 is Bayer array color filter layers schematic layout pattern provided by one embodiment of the invention；
Fig. 4 is variation schematic diagram of the silicon provided by one embodiment of the invention to the absorption coefficient of the light under different wave length；
Fig. 5 is that the light of different wave length provided by one embodiment of the invention passes through the transmission of Bayer array colored filter
Rate；
Fig. 6 is that RGB wave band provided by one embodiment of the invention passes through the depth of P epitaxial layer and the variation of photon flux is shown
It is intended to.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.
An embodiment of the present invention provides a kind of imaging sensor, as shown in Figure 1, imaging sensor includes being arranged successively
Microlens layer, flatness layer 20, color filter layers 30, circuit layer 40, epitaxial layer 50 and substrate 60, epitaxial layer 50 are interior equipped with more
A photodiode, photodiode include the first junction depth 51 and the second junction depth 52, each colour in color filter layers 30
Optical filter corresponds to a photodiode, 51 He of the first junction depth of photodiode corresponding to the colored filter of different colours
The depth of second junction depth 52 is all different.
For microlens layer and flatness layer 20, microlens layer is used for for multiple lenticules 10, lenticule to be arranged to outside
Light is collected, and multiple lenticules are set on flatness layer 20, and the surface that flatness layer 20 is set to lenticule is plane.
For color filter layers 30, color filter layers 30 can be Bayer array color filter layers, colorized optical filtering
It include Red lightscreening plate RCF, green color filter GCF and blue color filter BCF in lamella 30, as shown in Fig. 2, as a kind of implementation
The layout type of mode, Red lightscreening plate RCF, green color filter GCF and blue color filter BCF in color filter layers 30 is
Cross arrangement, epitaxial layer 50 can be P epitaxial layer, be equipped with multiple photodiodes in epitaxial layer 50, wherein color filter layers
The corresponding photodiode of each colored filter in 30, therefore, a lenticule, one piece of colored filter and a light
Electric diode constitutes a pixel, i.e., each corresponding one piece of colored filter of pixel, the corresponding light of every piece of colored filter
Electric diode.
For photodiode, photodiode includes the first junction depth 51 and the second junction depth 52, and the first junction depth 51 is located at the
In two junction depths 52, and the depth of the second junction depth 52 is greater than the depth of the first junction depth 51, and the colored filter institute of different colours is right
First junction depth 51 of the photodiode answered and the depth of the second junction depth 52 are all different, wherein the first junction depth 51 and the second knot
A junction depth in deep 52 can be P junction depth, another junction depth is N junction depth, i.e., obtain to the difference of each junction depth injection ion
Different junction depth types, as an implementation, the first junction depth 51 are P junction depth, and the second junction depth 52 is N junction depth, i.e., are infused by p
The depth of first junction depth 51 of each photodiode of dosage and energy adjustment entered, and the dosage and energy tune injected by n
The depth for saving the second junction depth 52 of each photodiode makes 51 depth of the first junction depth and the second junction depth of each photodiode
52 depth are predetermined depth.
Wherein, due to the corresponding photodiode of each colored filter in color filter layers 30, such as Fig. 3 institute
Show, when the light of different wave length passes through Bayer array colored filter, Bayer array colored filter to the transmissivity of light simultaneously
It is not absolute gating, it includes part green light and blue light, the light of different wave length that the light of different wave length, which passes through Red lightscreening plate RCF,
It include part feux rouges and blue light across green color filter GCF, it includes that part is red that the light of different wave length, which passes through blue filter BCF,
When light and green light, the i.e. light of different wave length pass through color filter layers 30, the optical filter of various colors is all mixed with other waves of part
The light of section, and then cause to generate crosstalk between neighborhood pixels.
In order to reduce the crosstalk between neighborhood pixels, corresponding to colored filter of the technical solution of the present invention by different colours
The first junction depth 51 of photodiode and the depth of the second junction depth 52 be all different, and then make each photodiode to difference
Blue color filter BCF, red filter is arranged by taking the pixel where blue color filter BCF as an example in the non_uniform response that wavelength light is shone
The junction depth of photodiode corresponding to piece RCF and green color filter GCF, makes the light of the pixel where blue color filter BCF
According to high sensitivity in the luminous sensitivity of Red lightscreening plate RCF and green color filter GCF, such crosstalk to blue color filter BCF
On the response in the pixel where blue color filter BCF of red light and green light just reduce, effectively reduce optical crosstalk.
In the present embodiment, as shown in Figure 4 and Figure 5, light of the provided silicon according to embodiments of the present invention to different wave length
Absorption coefficient variation it is found that the wavelength with light increases, silicon reduces the absorption of light, then light depth incident in silicon with
The wavelength of light increase it is deeper instead, since the wavelength of blue and green light and feux rouges is sequentially increased, it is blue and green light, red
The depth that light enters radiosilicon is also sequentially increased, in the present embodiment, as shown in fig. 6, RGB wave band provided by the embodiment of the present invention is worn
The depth of epitaxial layer and the variation relation of photon flux are crossed it is found that the depth that blue and green light and feux rouges penetrate in silicon successively increases
Greatly, therefore, the junction depth of photodiode corresponding to the depth adjustment colored filter of radiosilicon and P epitaxial layer can be entered according to light
Depth, the pixels of different colours should use the photodiode of different junction depths, just can be reduced pixel optics crosstalk.
As an implementation, the depth of the first junction depth 51 of each photodiode puts in order in the first junction depth 51
In position it is identical as position of the depth of its second junction depth 52 in the second junction depth 52 puts in order, wherein the first junction depth 51
It puts in order and puts in order for the depth of the first junction depth 51 of all photodiodes, it is all that the second junction depth 52, which puts in order,
The depth of second junction depth 52 of photodiode puts in order.
Wherein, putting in order for the depth of the first junction depth 51 and the second junction depth 52 can be according to the depth for incident silicon of not sharing the same light
It is determined.
Blue filter as a kind of embodiment that junction depth depth puts in order, in Bayer array color filter layers 30
The depth of first junction depth 51 of the corresponding photodiode of piece BCF be located at the first junction depth 51 put in order in minimum position；
The depth of second junction depth 52 of the corresponding photodiode of blue color filter BCF is located at the second junction depth 52 and puts in order
In minimum position.
Red filter as the another embodiment that junction depth depth puts in order, in Bayer array color filter layers 30
The depth of first junction depth 51 of the corresponding photodiode of mating plate RCF be located at the first junction depth 51 put in order in maximum position；
The depth of second junction depth 52 of the corresponding photodiode of Red lightscreening plate RCF is located at the second junction depth 52 and puts in order
In maximum position.
Red filter as the another embodiment that junction depth depth puts in order, in Bayer array color filter layers 30
The first of the depth of first junction depth 51 of the corresponding photodiode of mating plate RCF, the corresponding photodiode of green color filter GCF
The depth of first junction depth 51 of the depth and corresponding photodiode of blue color filter BCF of junction depth 51 is sequentially reduced；
It is the depth of second junction depth 52 of the corresponding photodiode of Red lightscreening plate RCF in color filter layers 30, green
Corresponding two pole of photoelectricity of depth and blue color filter BCF of second junction depth 52 of the corresponding photodiode of colo(u)r filter GCF
The depth of second junction depth 52 of pipe is sequentially reduced.
The identical situation of the junction depth of photodiode corresponding with colored filter of the embodiment of the present invention is carried out pair below
Than if the width of depletion region of photodiode is W, the distance of depletion region to silicon face is xn, the junction depth of photodiode is to RGB
The absorptivity formula of optical band are as follows:
It can be found from Fig. 5, the absorption coefficient of feux rouges, green light and blue light is respectively αR=0.414 μm-1, αG=0.66 μm-1, αB=2.41 μm-1。
Absorption of the photodiode of different junction depths to feux rouges, green light and blue light can be calculated by the Absorption Formula of light
Rate is as follows:
When junction depth is 0.5 μm, φR=18.7%, φG=28.1%, φB=70.0%；
When junction depth is 1.0 μm, φR=33.9%, φG=48.3%, φB=91.0%；
When junction depth is 2.0 μm, φR=56.3%, φG=73.3%, φB=99.2%；
When junction depth is 3.0 μm, φR=71.1%, φG=86.2%, φB=99.9%；
When junction depth is 4.0 μm, φR=80.9%, φG=92.9%, φB=99.9%；
Wherein, φR, φG, φBThe absorptivity of feux rouges, green light and blue light respectively.
For example, easy to calculate, it is assumed that blue color filter BCF is 0.9 to the transmissivity of blue light, to the saturating of green light and feux rouges
Penetrating rate is 0.2, and green color filter GCF is 0.9 to the transmissivity of green light, and the transmissivity to blue light and feux rouges is 0.2, red filter
Piece RCF is 0.9 to the transmissivity of feux rouges, and the transmissivity to green light and blue light is 0.2, when under Bayer array color filter layers 30
Side photodiode the second junction depth 52 depth it is identical, when being set as 2um, can calculate feux rouges, green light and blue light pixel it
Between crossfire value be 22.2%.
Depth, the green color filter GCF that the first junction depth 51 of the corresponding photodiode of Red lightscreening plate RCF is arranged are corresponding
Photodiode the first junction depth 51 depth and the corresponding photodiode of blue color filter BCF first junction depth 51
Depth is sequentially reduced；The depth of second junction depth 52 of the corresponding photodiode of Red lightscreening plate RCF, GCF pairs of green color filter
The depth of second junction depth 52 of the photodiode answered and the second junction depth 52 of the corresponding photodiode of blue color filter BCF
Depth be sequentially reduced.
For example, when working as Jr=3 μm, Jg=2 μm, Jb=1 μm,
Green light and feux rouges are respectively as follows: 24.2%, 24.3% to the crossfire value of blue light；
Blue light and feux rouges are respectively as follows: 14.6%, 26.1% to the crossfire value of green light；
Blue light and green light are respectively as follows: 10.6%, 14.2% to the crossfire value of feux rouges；
It is learnt by calculated result, as Jr > Jg > Jb, blue light is to the crossfire value of feux rouges pixel, and green light is to feux rouges pixel
Crossfire value, blue light significantly weaken the crossfire value of green light pixel relative to the photodiode of identical junction depth.
The embodiment of the present invention provides a kind of imaging sensor, and imaging sensor includes the microlens layer being arranged successively, flat
Layer, color filter layers, circuit layer, epitaxial layer and substrate, epitaxial layer is interior to be equipped with multiple photodiodes, photodiode packet
The first junction depth and the second junction depth are included, the corresponding photodiode of each colored filter in color filter layers is not of the same race
First junction depth of photodiode corresponding to the colored filter of color and the depth of the second junction depth are all different, by by light
Difference is arranged in first junction depth of electric diode and the depth of the second junction depth, can weaken string caused by colored filter light transmission itself
It disturbs, avoids physically production optical confinement layer bring complicated technology, while reducing adjacent pixel light bring crosstalk.
Another kind embodiment of the invention provides a kind of production method of imaging sensor, and imaging sensor includes being arranged successively
Microlens layer, flatness layer, color filter layers, circuit layer, epitaxial layer and substrate, multiple two poles of photoelectricity are equipped in epitaxial layer
Pipe, photodiode includes the first junction depth and the second junction depth, processing method include:
The corresponding photodiode of each colored filter into color filter layers injects ion, makes different colours
First junction depth of photodiode corresponding to colored filter and the depth of the second junction depth are all different.
Wherein, make the first junction depth of photodiode corresponding to the colored filter of different colours and the depth of the second junction depth
Degree is all different, comprising:
Make depth, the green filter of the first junction depth of the corresponding photodiode of the Red lightscreening plate in color filter layers
First junction depth of the depth and corresponding photodiode of blue color filter of the first junction depth of the corresponding photodiode of piece
Depth is sequentially reduced；
And make the depth of the second junction depth of the corresponding photodiode of the Red lightscreening plate in color filter layers, green filter
The depth of second junction depth of the corresponding photodiode of mating plate and the second junction depth of the corresponding photodiode of blue color filter
Depth be sequentially reduced.
Wherein, the corresponding photodiode of each colored filter into color filter layers injects ion, comprising:
By the depth of the first junction depth of each photodiode of dosage and energy adjustment of p ion implanting, and by n from
The depth of second junction depth of the dosage and each photodiode of energy adjustment of son injection.
The embodiment of the present invention provides a kind of processing method of imaging sensor, by by the first junction depth of photodiode and
Difference is arranged in the depth of second junction depth, can weaken crosstalk caused by colored filter light transmission itself, avoid and physically make
Make optical confinement layer bring complicated technology, while reducing adjacent pixel light bring crosstalk.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Several equivalent substitute or obvious modifications are made under the premise of not departing from present inventive concept, and performance or use is identical, all should
It is considered as belonging to present invention scope of patent protection determined by the appended claims.
Claims (10)
1. a kind of imaging sensor, which is characterized in that described image sensor include the microlens layer being arranged successively, flatness layer,
Color filter layers, circuit layer, epitaxial layer and substrate, the epitaxial layer is interior to be equipped with multiple photodiodes, the photoelectricity two
Pole pipe includes the first junction depth and the second junction depth, corresponding two pole of photoelectricity of each colored filter in the color filter layers
It manages, the first junction depth of the photodiode corresponding to the colored filter of different colours and the depth of the second junction depth are equal
It is not identical.
2. imaging sensor as described in claim 1, which is characterized in that first junction depth position in the photodiode
In second junction depth, and the depth of second junction depth is greater than the depth of the first junction depth.
3. imaging sensor as described in claim 1, which is characterized in that the depth of the first junction depth of each photodiode
The position spent in the first junction depth puts in order is identical as position of the depth of its second junction depth in the second junction depth puts in order,
Wherein, the first junction depth puts in order puts in order for the depth of the first junction depth of all photodiodes, the second junction depth
It puts in order and puts in order for the depth of the second junction depth of all photodiodes.
4. imaging sensor as claimed in claim 3, which is characterized in that the blue color filter pair in the color filter layers
The depth of first junction depth of the photodiode answered be located at first junction depth put in order in minimum position；
The depth of second junction depth of the corresponding photodiode of the blue color filter is located at during second junction depth puts in order
Minimum position.
5. imaging sensor as claimed in claim 3, which is characterized in that the Red lightscreening plate pair in the color filter layers
The depth of first junction depth of the photodiode answered be located at first junction depth put in order in maximum position；
The depth of second junction depth of the corresponding photodiode of the Red lightscreening plate is located at during second junction depth puts in order
Maximum position.
6. imaging sensor as claimed in claim 3, which is characterized in that the Red lightscreening plate pair in the color filter layers
The depth of first junction depth of the photodiode answered, the depth of the first junction depth of the corresponding photodiode of green color filter and
The depth of first junction depth of the corresponding photodiode of blue color filter is sequentially reduced；
The depth of second junction depth of the corresponding photodiode of Red lightscreening plate in the color filter layers, green color filter
The depth of second junction depth of the depth and corresponding photodiode of blue color filter of the second junction depth of corresponding photodiode
Degree is sequentially reduced.
7. the imaging sensor as described in claim 1 to 6 any one, which is characterized in that first junction depth by p-type from
The dosage and energy adjustment depth of son injection, second junction depth pass through the dosage and energy adjustment depth of N-shaped ion implanting.
8. a kind of production method of imaging sensor, which is characterized in that described image sensor includes the lenticule being arranged successively
Layer, flatness layer, color filter layers, circuit layer, epitaxial layer and substrate, the epitaxial layer is interior to be equipped with multiple photodiodes,
The photodiode includes the first junction depth and the second junction depth, and the production method includes:
The corresponding photodiode of each colored filter into the color filter layers injects ion, makes different colours
First junction depth of the photodiode corresponding to the colored filter and the depth of the second junction depth are all different.
9. production method as claimed in claim 8, which is characterized in that the colored filter institute for making different colours is right
First junction depth of the photodiode answered and the depth of the second junction depth are all different, comprising:
Make depth, the green filter of the first junction depth of the corresponding photodiode of Red lightscreening plate in the color filter layers
First junction depth of the depth and corresponding photodiode of blue color filter of the first junction depth of the corresponding photodiode of piece
Depth is sequentially reduced；
And make the depth of the second junction depth of the corresponding photodiode of Red lightscreening plate in the color filter layers, green filter
The depth of second junction depth of the corresponding photodiode of mating plate and the second junction depth of the corresponding photodiode of blue color filter
Depth be sequentially reduced.
10. production method as claimed in claim 8, which is characterized in that the colored filter of each of Xiang Suoshu color filter layers
The corresponding photodiode of mating plate injects ion, comprising:
By the depth of the first junction depth of each photodiode of dosage and energy adjustment of p-type ion implanting, and by N-shaped from
The depth of second junction depth of the dosage and each photodiode of energy adjustment of son injection.
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|---|---|---|---|---|
| US11942491B2 (en) | 2021-03-18 | 2024-03-26 | Enkris Semiconductor, Inc. | Light sensing unit and GaN-based image sensor and display apparatus thereof |
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| KR20060077148A (en) * | 2004-12-30 | 2006-07-05 | 매그나칩 반도체 유한회사 | Image sensor capable of increasing optical characteristic and color reappearance and method for fabrication of the same |
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| US11942491B2 (en) | 2021-03-18 | 2024-03-26 | Enkris Semiconductor, Inc. | Light sensing unit and GaN-based image sensor and display apparatus thereof |
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Application publication date: 20190628 |