CN109285851A - A kind of pixel unit and preparation method thereof - Google Patents
A kind of pixel unit and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 144
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 239000000725 suspension Substances 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims abstract description 12
- 239000007924 injection Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910021478 group 5 element Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
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- 238000000034 method Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002401 inhibitory effect Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 10
- 238000002955 isolation Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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Abstract
The present invention provides a kind of pixel units and preparation method thereof, this method comprises: step 1, forms isolated area around the edge injecting p-type material of pixel unit in p-type epitaxial layer；Step 2, polysilicon gate is formed in the upper surface of p-type epitaxial layer, and polysilicon gate is performed etching, obtain transmission grid；Step 3, it injects n type material in two times in p-type epitaxial layer and forms N-doped zone；Step 4, on p-type epitaxial layer top, injection n type material forms suspension diffusion node.The present invention realizes the effect of inhibiting the crosstalk of body area, reduces the area loss of pixel unit part and pixel and logic circuit section, effectively promotion fill factor.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of pixel unit and preparation method thereof.
Background technique
In recent years, excellent characteristics of the near-infrared enhanced image sensor in terms of detection has pushed its application increasingly wide
It is general, it is quickly grown in fields such as imaging of medical, laser radar, machine vision and intelligent transportation.Especially in laser radar range
Field mostly uses near infrared light as detection light for security consideration, to avoid the injury to human eye, thus requires to receive
The photodiode of echo information has good sensibility near infrared light, to analyze the distance for obtaining target object.
For semiconductor material of the same race, absorption coefficient and incident depth are related with the wavelength of incident light, the longer absorption of wavelength
Coefficient is smaller, and incident depth is bigger.For longer wavelengths of near infrared light, need enough depth that could absorb.Cause
N-doped zone needs to form deeper junction depth in this pixel unit, to fully absorb near infrared light, promotes quantum efficiency.
In a pixel unit, the p-type epitaxial layer for generally including P type substrate and being arranged in P type substrate, usual p-type
For the thickness of epitaxial layer at 10 μm or so, the depletion region depth that photodiode N-doped zone is formed is limited, causes near infrared light
It absorbs difficult.Assimilation effect is promoted, needs to dramatically increase the thickness of epitaxial layer to 20 μm or more, forms deeper PN junction.And
The increase of junction depth leads to that N-doped zone body area becomes larger, photo-generated carrier increases, between pixel unit and pixel unit and logic electricity
The crosstalk in road area easily generates, and photo-generated carrier is caused to leak in adjacent area during charge integration.
To avoid crosstalk between pixel unit, deep trench is usually etched between adjacent pixel unit and carries out dielectric again
Filling is to form isolation, and with the increase of N-doped zone depth, the depth of the deep isolation trench also needs to increase therewith.However, advanced
The lithographic technique of the deep isolation trench of wide ratio is problem urgently to be resolved during current semiconductor is integrated, is difficult during deep etching
To steep side wall, in order to reach required depth, the width of groove is consequently increased, and especially the width at groove opening is very
Greatly, very big waste is caused to chip area, reduces fill factor；In addition, the isolation method needs to increase etching in process
The technique filled with dielectric, and requirement of the etching of deep trench for equipment is high, common etching apparatus is unable to satisfy, past
It is past to need to be equipped with special etching apparatus, complex technical process, and increase cost input.
Summary of the invention
For the deficiencies in the prior art, the object of the present invention is to provide a kind of pixel unit and its preparation sides
Method solves the problems, such as that groove width is larger in the prior art, complex process, higher cost.
In order to solve the above-mentioned technical problem, the present invention is realised by adopting the following technical scheme:
A kind of preparation method of pixel unit, comprising the following steps:
Step 1, isolated area is formed around the edge injecting p-type material of pixel unit in p-type epitaxial layer；
Step 2, polysilicon gate is formed in the upper surface of p-type epitaxial layer, and polysilicon gate is performed etching, transmitted
Grid；
Step 3, it injects n type material in two times in p-type epitaxial layer and forms N-doped zone；
Step 4, on p-type epitaxial layer top, injection n type material forms suspension diffusion node.
Further, the P-type material is the compound of group iii elements ion or group iii elements ion.
Further, isolation is formed around the edge injecting p-type material of pixel unit in p-type epitaxial layer in the step 1
Area, including at least the injection of different-energy twice.
Further, in the step 1 in p-type epitaxial layer around the edge injecting p-type material shape in four times of pixel unit
At isolated area；
When the material of injecting p-type in four times, the energy of each injecting p-type material is sequentially increased, each injecting p-type material
Dosage it is identical, gradient when each injecting p-type material is identical.
Further, isolation is formed around the edge injecting p-type material of pixel unit in p-type epitaxial layer in the step 1
Area, comprising:
For the first time: the energy of injecting p-type material is 150keV~300keV, and the dosage of injecting p-type material is 5 × 1011cm-2~1.5 × 1012cm-2, gradient when injecting p-type material is 0 °~2 °；
Second: the energy of injecting p-type material is 500keV~700keV, and the dosage of injecting p-type material is 5 × 1011cm-2~1.5 × 1012cm-2, gradient when injecting p-type material is 0 °~2 °；
For the third time: the energy of injecting p-type material is 1000keV~1300keV, the dosage of injecting p-type material is 5 ×
1011cm-2~1.5 × 1012cm-2, gradient when injecting p-type material is 0 °~2 °.
Further, the n type material is the compound of group-v element ion or group-v element ion.
Further, when injecting n type material in two times in p-type epitaxial layer in the step 3, n type material is injected every time
Energy be sequentially increased, every time inject n type material dosage be sequentially reduced, every time inject n type material when gradient successively subtract
It is small.
Further, it injects n type material in the step 3 in two times in p-type epitaxial layer and forms N-doped zone, comprising:
For the first time: the energy for injecting n type material is 190keV~250keV, and the dosage for injecting n type material is 1 × 1012cm-2~3.5 × 1013cm-2, gradient when injecting n type material is 3 °~7 °；
Second: the energy for injecting n type material is 300keV~700keV, and the dosage for injecting n type material is 1 × 1011cm-2~9 × 1012cm-2, gradient when injecting n type material is 0 °~2 °.
The present invention also provides a kind of pixel unit, including P type substrate and the p-type epitaxial layer being arranged in above P type substrate,
It is characterized in that, the top of the p-type epitaxial layer is provided with N-doped zone and p-well isolated area, the top of the p-well isolated area
It is provided with suspension diffusion node；
The upper surface of the p-type epitaxial layer is equipped with transmission grid；
P-type isolated area is equipped between the pixel unit and adjacent pixel unit and/or logic circuit area；
Further, the p-well isolated area is formed by non-uniform doping P-type material.
Further, the depth of the p-well isolated area is not less than the depth of photodiode.
Compared with prior art, the present invention beneficial has the technical effect that
The present invention is by between pixel unit and pixel unit and logic circuit section form heavily doped region and realize picture
Member is isolated with adjacent area, and mature mask technique controls isolation sector width well, passes through dopant material concentration
Adjustment can form relatively narrow isolated area, and realize the effect of inhibiting the crosstalk of body area well, reduce between pixel unit and
The area loss of pixel and logic circuit section, effectively improves fill factor.
The formation of isolated area of the present invention uses the injection of dopant material without performing etching the filling with dielectric
Heavily doped region is formed the crosstalk of charge is isolated, existing ion implantation device can be made full use of, is had very with existing preparation process
Good compatibility, simplifies technical process, reduces production cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of a pixel unit in the present invention；
Fig. 2 is the structural schematic diagram of two adjacent pixel units in the present invention；
Symbology in figure are as follows: 1-P type substrate；2-p-type epitaxial layers；3-pixel units；4-logic circuit areas；
301-N-doped zones；302-transmission grid；303-suspension diffusion nodes；304-isolated areas；305-p-well isolated areas；401—
NMOS；402—PMOS；403-N-doped zones；5-adjacent pixel units.
Explanation is further explained in detail to particular content of the invention below in conjunction with drawings and examples.
Specific embodiment
Specific embodiments of the present invention are given below, it should be noted that the invention is not limited to implement in detail below
Example, all equivalent transformations made on the basis of the technical solutions of the present application each fall within protection scope of the present invention.
Embodiment 1:
The present embodiment provides a kind of preparation method of pixel unit, comprising the following steps:
Step 1, isolated area is formed around the edge injecting p-type material of pixel unit in p-type epitaxial layer；
In the present embodiment, influence of the preparation of isolated area to photodiode N-doped zone shape in order to prevent, this reality
Example is applied by the way of injecting in three times, the concentration of P-type material is made from top to bottom to keep uniform.
Wherein, P-type material is the compound of group iii elements ion or group iii elements ion, such as boron ion.
Specifically includes the following steps:
For the first time: the energy of injecting p-type material is 150keV~300keV, and the dosage of injecting p-type material is 5 × 1011cm-2~1.5 × 1012cm-2, gradient when injecting p-type material is 0 °~2 °；
Second: the energy of injecting p-type material is 500keV~700keV, and the dosage of injecting p-type material is 5 × 1011cm-2~1.5 × 1012cm-2, gradient when injecting p-type material is 0 °~2 °；
For the third time: the energy of injecting p-type material is 1000keV~1300keV, the dosage of injecting p-type material is 5 ×
1011cm-2~1.5 × 1012cm-2, gradient when injecting p-type material is 0 °~2 °.
Step 2, polysilicon gate is formed in the upper surface of p-type epitaxial layer, and polysilicon gate is performed etching, transmitted
Grid；
Step 3, it injects n type material in two times in p-type epitaxial layer and forms N-doped zone；
Wherein, n type material is the compound of group-v element ion or group-v element ion, such as arsenic ion, phosphonium ion.
In order to meet absorb near infrared light needed for depth requirements, for the first time: inject n type material energy be 190keV~
250keV, the dosage for injecting n type material is 1 × 1012cm-2~3.5 × 1013cm-2, inject n type material when gradient be 3 °~
7°；Second: the energy for injecting n type material is 300keV~700keV, and the dosage for injecting n type material is 1 × 1011cm-2~9
×1012cm-2, gradient when injecting n type material is 0 °~2 °.
Wherein, when second of injection n type material, gradient is reduced, and is facilitated ion and is injected to deep, and deep knot is formed, with
Just near infrared light is absorbed, quantum efficiency is promoted.
Step 4, on p-type epitaxial layer top, injection n type material forms suspension diffusion node.It, can in order to form low potential
Light induced electron is quickly sucked when transmitting grid conducting, the doping concentration of suspension diffusion node layer is higher than N-doped zone to be formed more
Low potential area.
When injecting p-type material generates isolated area in three times in step 1, preferably:
For the first time: the energy of injecting p-type material is 200keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
Second: the energy of injecting p-type material is 600keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
For the third time: the energy of injecting p-type material is 1100keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °.
For the present embodiment using modulation transfer function as evaluation index, MTF is the image sensing under specific resolution ratio
The contrast that object is imaged is transformed into the ability in image by device, and the MTF the high, and then image is more clear.N-doped zone body area depth
Increase will cause part photo-generated carrier and enter adjacent pixel and generate crosstalk, causes the clarity of image to decline, causes MTF's
Value reduces.In order to be effectively improved MTF, need to be isolated between adjacent pixels.
Pass through preferably Implantation Energy parameter three times, modulation transfer function 0.5 in the present embodiment.
Comparative example 1:
The present embodiment the difference from embodiment 1 is that: isolated area only generated by an injecting p-type material in step 1；
The energy of its injecting p-type material is 100keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inclination when injecting p-type material
Degree is 0 °；After an above-mentioned injecting p-type material, MTF 0.2.
This method mtf value obtained is lower, this is because when bolus injection, need biggish Implantation Energy reach compared with
Deep injection depth, will lead to the bottom that injection ion all concentrates on isolated area in this way, and middle part and top fail to be formed effectively
Doping, therefore isolation can not be played the role of, crosstalk is easy to produce between pixel unit, therefore MTF is lower.
Comparative example 2:
The present embodiment the difference from embodiment 1 is that:
When injecting p-type material generates isolated area in three times in step 1:
For the first time: the energy of injecting p-type material is 100keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
Second: the energy of injecting p-type material is 600keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
For the third time: the energy of injecting p-type material is 1100keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °.
At this point, modulation transfer function is 0.41.
Comparative example 3:
The present embodiment the difference from embodiment 1 is that:
When injecting p-type material generates isolated area in three times in step 1:
For the first time: the energy of injecting p-type material is 200keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
Second: the energy of injecting p-type material is 400keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
For the third time: the energy of injecting p-type material is 1100keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °.
At this point, modulation transfer function is 0.46.
Comparative example 4:
The present embodiment the difference from embodiment 1 is that:
When injecting p-type material generates isolated area in three times in step 1:
For the first time: the energy of injecting p-type material is 200keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
Second: the energy of injecting p-type material is 600keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °；
For the third time: the energy of injecting p-type material is 900keV, and the dosage of injecting p-type material is 8 × 1011cm-2, inject P
Gradient when profile material is 0 °.
At this point, modulation transfer function is 0.36.
Embodiment 2:
A kind of pixel unit is present embodiments provided, as shown in Figure 1, 2, including P type substrate 1 and setting are in P type substrate 1
The p-type epitaxial layer 2 of side, the top of the p-type epitaxial layer 2 are provided with N-doped zone 301 and p-well isolated area 305, the p-well every
Top from area 305 is provided with suspension diffusion node 303；
The upper surface of the p-type epitaxial layer 2 is equipped with transmission grid 302；
P-type isolated area 304 is equipped between the pixel unit 3 and adjacent pixel unit 5 and/or logic circuit area 4；
The depth of the p-type isolated area 304 is not less than the depth of N-doped zone 301.
The both ends that grid 302 are transmitted in the present embodiment are overlapping with N-doped zone 301 and 303 part of suspension diffusion node respectively,
In this way, that is, when on transmitting grid 302 added with sufficiently large voltage, transmitting the p type island region of 302 lower part of grid when transmitting the conducting of grid 302
Transoid forms channel region, N-doped zone 301 is connected to suspension diffusion node 303, conducting channel is formed, so that N-type be mixed
Light induced electron in miscellaneous area 301, which is transferred in suspension diffusion node 303, to be stored.
Doped with the P-type material of high concentration in the p-type isolated area 304 of the present embodiment, high potential region is formed, stops photoproduction
Charge is leaked to adjacent pixel unit 5 and logic circuit area 4, and wherein logic circuit area 4 includes NMOS401 and PMOS402,
PMOS402 locating is N-type heavily doped region, and potential is lower, can attract photogenerated charge during exposing integral, generates leakage current, p-type
The high potential of isolated area 304 just effectively hinders leakage of the photogenerated charge to logic circuit area.The minimum of p-type isolated area 304 is wide
Degree is related to the doping concentration of P-type material, and doping concentration is higher, and the width for reaching required when being effectively isolated is smaller.
Particularly, for prevent photodiode N-doped zone upside-down triangle shape appearance, p-type isolated area 305 is by non-
Uniform Doped P-type material is formed, preferably the injection mode of top heavy, and the depth of isolated area is not less than the depth of photodiode
Degree is deep.
Since 301 body area of photodiode N-doped zone becomes larger, the low potential of suspension diffusion node 303 can also become light
The center of attraction of raw electronics, causes light induced electron to be leaked in suspension diffusion node 303 during integral.Preferably, of the invention
Equipped with p-well isolated area 305, High potential area, is formed by the doping of P-type material, other than 303 upper surface of suspension diffusion node
It wraps up wherein, to prevent the entrance of light induced electron in region.The p-well isolated area 305 is close to the side of photodiode side
Boundary is located at transmission 302 half of grid between the boundary of suspension diffusion node 303.P-well isolated area 305 is close to two pole of photoelectricity
The minimum range on the boundary of pipe side to 303 boundary of suspension diffusion node, the doping concentration with the P-type material of p-well isolated area 305
Correlation, doping concentration is higher, and the value of minimum range is smaller, while the minimum range can also be by photodiode N-doped zone 301
The influence of junction depth and concentration.
Claims (10)
1. a kind of preparation method of pixel unit, which comprises the following steps:
Step 1, isolated area (304) are formed around the edge injecting p-type material of pixel unit in p-type epitaxial layer (2)；
Step 2, polysilicon gate is formed in the upper surface of p-type epitaxial layer (2), and polysilicon gate is performed etching, obtain transmission grid
(302)；
Step 3, it injects n type material in two times in p-type epitaxial layer (2) and forms N-doped zone (403)；
Step 4, on p-type epitaxial layer (2) top, injection n type material forms suspension diffusion node (303).
2. the preparation method of pixel unit according to claim 1, which is characterized in that the P-type material is group iii elements
The compound of ion or group iii elements ion.
3. the preparation method of pixel unit according to claim 1, which is characterized in that in p-type epitaxial layer in the step 1
(2) isolated area (304) are formed around the edge injecting p-type material of pixel unit, including at least the injection of different-energy twice.
4. the preparation method of pixel unit according to claim 3, which is characterized in that in p-type epitaxial layer in the step 1
(2) around the edge of pixel unit, injecting p-type material forms isolated area (304) in four times；
When the material of injecting p-type in four times, the energy of each injecting p-type material is sequentially increased, the agent of each injecting p-type material
Measure identical, gradient when each injecting p-type material is identical.
5. the preparation method of pixel unit according to claim 1 or 4, which is characterized in that in the step 1 outside p-type
The edge injecting p-type material for prolonging layer (2) around pixel unit forms isolated area (304), comprising:
For the first time: the energy of injecting p-type material is 150keV~300keV, and the dosage of injecting p-type material is 5 × 1011cm-2~
1.5×1012cm-2, gradient when injecting p-type material is 0 °~2 °；
Second: the energy of injecting p-type material is 500keV~700keV, and the dosage of injecting p-type material is 5 × 1011cm-2~
1.5×1012cm-2, gradient when injecting p-type material is 0 °~2 °；
For the third time: the energy of injecting p-type material is 1000keV~1300keV, and the dosage of injecting p-type material is 5 × 1011cm-2~
1.5×1012cm-2, gradient when injecting p-type material is 0 °~2 °.
6. the preparation method of pixel unit according to claim 1, which is characterized in that the n type material is group-v element
The compound of ion or group-v element ion.
7. the preparation method of pixel unit according to claim 1, which is characterized in that in p-type epitaxial layer in the step 3
(2) when injecting n type material in two times, the energy for injecting n type material every time is successively increased, and injects the dosage of n type material every time
It is sequentially reduced, gradient when injecting n type material every time is sequentially reduced.
8. the preparation method of pixel unit according to claim 1 or claim 7, which is characterized in that in the step 3 outside p-type
Prolong and inject n type material formation N-doped zone (403) in layer (2) in two times, comprising:
For the first time: the energy for injecting n type material is 190keV~250keV, and the dosage for injecting n type material is 1 × 1012cm-2~
3.5×1013cm-2, gradient when injecting n type material is 3 °~7 °；
Second: the energy for injecting n type material is 300keV~700keV, and the dosage for injecting n type material is 1 × 1011cm-2~9
×1012cm-2, gradient when injecting n type material is 0 °~2 °.
9. a kind of pixel unit, including P type substrate (1) and the p-type epitaxial layer (2) being arranged above P type substrate (1), feature
It is, the top of the p-type epitaxial layer (2) is provided with N-doped zone (301) and p-well isolated area (305), the p-well isolated area
(305) top is provided with suspension diffusion node (303)；
The upper surface of the p-type epitaxial layer (2) is equipped with transmission grid (302)；
P-type isolated area (304) are equipped between the pixel unit (3) and adjacent pixel unit (5) and/or logic circuit area (4)；
The depth of the p-type isolated area (304) is not less than the depth of N-doped zone (301).
10. pixel unit according to claim 9, which is characterized in that the p-well isolated area (305) is mixed by non-homogeneous
Miscellaneous P-type material is formed.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920811A (en) * | 2019-03-26 | 2019-06-21 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110444555A (en) * | 2019-08-16 | 2019-11-12 | 武汉新芯集成电路制造有限公司 | Semiconductor devices and its manufacturing method |
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