CN109950229A - Measuring structure - Google Patents
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- CN109950229A CN109950229A CN201711472179.0A CN201711472179A CN109950229A CN 109950229 A CN109950229 A CN 109950229A CN 201711472179 A CN201711472179 A CN 201711472179A CN 109950229 A CN109950229 A CN 109950229A
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- 238000005259 measurement Methods 0.000 abstract description 25
- 230000009514 concussion Effects 0.000 abstract description 13
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- 239000000758 substrate Substances 0.000 description 15
- 239000003989 dielectric material Substances 0.000 description 13
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Abstract
A kind of measuring structure, in forming a concussion measurement group with two ring bodies on dielectric layer, two frequency peaks can be measured in the operation of single measurement dielectric constant.
Description
Technical field
The present invention is about a kind of measuring structure, especially with regard to a kind of measuring structure to measure dielectric constant.
Background technique
In response to the 5th Generation Mobile Communication System (the 5th generation mobile of next generation telecommunication transmission frequency
Networks or 5th generation wireless systems, abbreviation 5G), transmission frequency between 23 to 40GHz it
Between, therefore in the laying of the line construction of semiconductor package part, used in dielectric material dielectric constant accuracy requirement
High, otherwise semiconductor package part obtained is unable to reach transmission frequency between 23 to the demand between 40GHz, that is, should be partly
Conductor packaging part is unable to reach the demand of 5G electronic product.
In addition, encapsulation factory is bound to consider the characteristic of the dielectric material, as dielectric is normal when using dielectric material at present
Number, and the characteristic of the dielectric material is defined by material supplier, and this definition is only the dielectric material under specific temperature
Numerical value (such as dielectric constant of dielectric material when liquid), and numerical value of the not shown dielectric material at other temperature is (such as
Dielectric constant of dielectric material when solid-state).
However, the dielectric material can be transformed into solid from liquid (or molten state) during making semiconductor package part
The numerical value of state, dielectric constant can dramatically change, if therefore the liquid dielectric constant with reference to defined in the material supplier, make
The transmission frequency of the line construction of semiconductor package part out be easy to be disturbed and can not effective transmission signal, and then cause 5G electric
Sub- product can not meet the demand of high frequency.
Therefore, encapsulation factory would generally voluntarily measure dielectric constant of dielectric material when solid-state, then voluntarily measure according to this
The dielectric constant of survey judges whether the dielectric material meets demand.
As shown in Figure 1A to Figure 1B, encapsulation factory is intended to judge whether to meet the dielectric material of demand to simulate the route to be made
Structure 1a (product dielectric layer 10a as shown in Figure 1 C and line layer 11a), and produce an imitated structure 1 and (be free of shown in Fig. 1 C
Line layer 11a) comprising at least one measure dielectric layer 10 and one be set to the measurement dielectric layer 10 on concussion measurement portion 11,
The material characteristic of the measurement dielectric layer 10 is identical to the material characteristic of product dielectric layer 10a, and the concussion measurement portion 11 has
One round loop wire 111 and two transmission lines 113,114.Specifically, which is spaced on two transmission line 113,
Between 114, make that there is gap e between the circle loop wire 111 and two transmission line 113,114, and enables the circle loop wire 111 and be somebody's turn to do
Two transmission lines 113,114 can generate electrical couplings, wherein the circumferential surface range L of the corresponding gap e of the circle loop wire 111 can define
The size of the coupling amount of the electrical couplings, and the Preset Transfer frequency (such as 28GHz) in the concussion measurement portion 11 can define the circle
The perimeter (or outer diameter R of the circle loop wire 111) of shape loop wire 111, the i.e. wavelength of the Preset Transfer frequency can be the circle loop wire
111 perimeter (such as 1/28 nanometer).
In addition, before making line construction 1a, measurement dielectric layer 10 of the imitated structure 1 can be first measured when solid-state
Dielectric constant, to judge whether product dielectric layer 10a can use.Specifically, in measure the measurement dielectric layer 10 when solid-state
Dielectric constant when, first adjust environment temperature, make the measurement dielectric layer 10 maintain solid state, then by a measuring instrument (figure not
Show) electric current be sequentially coupled in through a wherein transmission line 113, round loop wire 111 and another transmission line 114, it is default to obtain this
The peak value of transmission frequency (such as 28GHz), computer calculates out the measurement dielectric layer according to existing physical equation by the peak value later
The numerical value of dielectric constant of 10 (i.e. the product dielectric layer 10a) when solid-state.
Therefore, encapsulation factory can input the numerical value of dielectric constant when solid-state of measurement dielectric layer 10 in simulation software, with
Carry out the simulation of semiconductor package part 1 ' (as shown in figure iD, it includes semiconductor wafer 12, line construction 1a and package materials 13)
Operation, judges whether product dielectric layer 10a meets the demand of line construction 1a whereby, that is, when meeting demand,
It can start to carry out the production of line construction 1a.
However, the measurement concussion portion 11 of existing imitated structure 1, the end of transmission line 113,114 is rectilinear end, thus should
Round loop wire 111 only generates electrical couplings in place of minimum circumferential surface range L, causes when carrying out metrology operation, the electric current
Coupling amount is minimum, thus measures signal and be easy to be interfered by noise, especially when the dynamic range deficiency of measuring instrument, gained
Measurement signal be mostly noise, therefore will affect the accuracy of captured peak value or frequency band.
In addition, the measurement concussion portion 11 of existing imitated structure 1, which is simply possible to use in, measures single frequency band (the Preset Transfer frequency)
Dielectric constant need to set if requirement surveys the dielectric constant of multiple frequency bands (such as Preset Transfer frequency is 38GHz and 23.75GHz)
Count the multiple groups imitated structure 1 (perimeter of the round loop wire 111 in different measurement concussion portions 11), thus time-consuming and consumption cost.
Therefore, how to overcome above-mentioned variety of problems in the prior art, have become the project for wanting to solve at present in fact.
Summary of the invention
In view of the missing of the above-mentioned prior art, the present invention provides a kind of measuring structure then, can be reduced and makes the measuring structure
Quantity.
Measuring structure of the invention includes: dielectric layer；First conducting wire is set on the dielectric layer and has first end；
Second conducting wire is set on the dielectric layer and has the second end of the corresponding first end；First ring body is set to the dielectric
It on layer and is spaced between the first end and the second end, and the electrical couplings first end and the second end；
And second ring body, it is set on the dielectric layer and compartment of terrain is surrounded on outside the first ring body, and compartment of terrain surrounds the first end
With the second end, and with the first end and the second end electrical couplings.
In measuring structure above-mentioned, the shape of the first end corresponds to the side profile of first ring body or the second ring body.
In measuring structure above-mentioned, the shape of the second end corresponds to the side profile of first ring body or the second ring body.
In measuring structure above-mentioned, the first end and the second end constitute a framework, and first ring body is made to be located at the frame
In body.For example, the shape of the framework corresponds to the side profile of first ring body.
In measuring structure above-mentioned, between being respectively formed between first ring body and the first end and between the second end
Gap, and the lateral limit for enabling first ring body correspond to the gap defines the coupling amount of electrical couplings caused by first ring body.
In measuring structure above-mentioned, between being respectively formed between second ring body and the first end and between the second end
Gap, and the lateral limit for enabling second ring body correspond to the gap defines the coupling amount of electrical couplings caused by second ring body.
In measuring structure above-mentioned, dielectric constant of the measuring structure to measure the dielectric layer, and the dielectric constant pair
Answer the transmission frequency of signal.For example, the side length of first ring body or second ring body corresponds to the wavelength of the transmission frequency.
From the foregoing, it will be observed that measuring structure of the invention, mainly by the design of two ring bodies (the first ring body and the second ring body), with
In the operation that single time measures dielectric constant, two frequency peaks can be measured, therefore compared to existing imitated structure, if using
When measuring structure of the invention measures the dielectric constant of multiple frequency bands, the quantity for making the measuring structure can be reduced, thus can subtract
Few material cost, and can substantially shorten the time of metrology operation.
In addition, the end shape of the conducting wire corresponds to the side profile of the ring body, to increase the ring body to generate electrical coupling
The lateral limit of conjunction, therefore compared to the prior art when Yu Jinhang metrology operation, can increase the coupling amount of the electric current, to avoid miscellaneous
News interference, the and even if dynamic range of the measuring instrument is insufficient, can be greatly decreased resulting noise, thus can improve and be captured
The accuracy of frequency peak or frequency band.
Detailed description of the invention
Figure 1A is the floor map of existing imitated structure；
Figure 1B is the diagrammatic cross-section of existing imitated structure；
Fig. 1 C is the diagrammatic cross-section of existing line structure；
Fig. 1 D is existing diagrammatic cross-section with a semiconductor package；
Fig. 2A is the floor map of measuring structure of the invention；
Fig. 2 B is the diagrammatic cross-section of the B-B hatching of Fig. 2A；
Fig. 3 is the diagrammatic cross-section of the actual package substrate of corresponding diagram 2A；And
The chart of the measuring structure that Fig. 4 is Fig. 2A Frequency point measured in metrology operation.
Symbol description:
1 imitated 1 ' semiconductor package part of structure
1a line construction 10 measures dielectric layer
10a product dielectric layer 11 shakes measurement portion
11a, the round loop wire of 31 line layer 111
113,114 transmission line, 12 semiconductor wafer
13 package material, 2 measuring structure
2a shakes measurement group 2b supporting body
20 dielectric layer, 21 first ring body
22 second ring body 22a, 22b ring portions
23 first conducting wire, 230 first end
24 second conducting wire, 240 the second end
25 ground plane, 3 actual package substrate
30 practical dielectric layer A frameworks
The gap a, d1, d2, t1, t2, e f1, f2 Frequency point
H thickness L circumferential surface range
L1, L2 lateral limit R outer diameter
R1 first external diameter R2 second external diameter
W line width.
Specific embodiment
Illustrate embodiments of the present invention by particular specific embodiment below, those skilled in the art can be by this explanation
The revealed content of book is understood other advantages and efficacy of the present invention easily.
It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to cooperate specification to be taken off
The content shown is not intended to limit the invention enforceable qualifications for the understanding and reading of those skilled in the art, therefore
Do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the present invention
Under the effect of can be generated and the purpose that can reach, it should all still fall in disclosed technology contents and obtain the model that can cover
In enclosing.Meanwhile cited such as "upper" in this specification, " first ", " second " and " one " term, be also only convenient for narration
Be illustrated, rather than to limit the scope of the invention, relativeness is altered or modified, and is changing technology without essence
It inside holds, when being also considered as the enforceable scope of the present invention.
Fig. 2A and Fig. 2 B is please referred to, is the schematic diagram of measuring structure 2 of the invention, the measuring structure 2 includes: one
Supporting body 2b comprising an at least dielectric layer 20 and other selective accessories and the concussion amount on same layer dielectric layer 20
Survey group 2a, wherein concussion measurement group 2a includes one first conducting wire 23, one second conducting wire 24, one first ring body 21 and one second
Ring body 22.
In this present embodiment, which is the structure of imitated target finished product, and such as (it can lay simple board structure
Dielectric layer 20 and do not lay line layer), wherein (it is laid with reality to target finished product actual package substrate 3 as shown in Figure 3
Dielectric layer 30 and multiple line layers 31), and the measuring structure 2 is for measuring a parameter (such as dielectric constant), with enable computer by
The parameter calculates out required target value.
In other words, when being intended to learn the dielectric constant of the practical dielectric layer 30 of the actual package substrate 3, this will not directly be measured
The practical dielectric layer 30 of actual package substrate 3, to avoid destroy the line layer 31, therefore by copy the actual package substrate 3 but
The measuring structure 2 of line layer 31 is not laid as measuring object, as long as thus measure the measuring structure 2 dielectric layer 20 dielectric it is normal
Number, it can be learnt that the dielectric constant of the practical dielectric layer 30.
In addition, the actual package substrate 3 is, for example, the substrate (substrate) or seedless with core layer and line construction
The line construction of central layer (coreless) is such as fanned out to (fan out) type and reroutes road floor in forming line layer 31 on dielectric material
(redistribution layer, abbreviation RDL).
Material composition and the thickness h of the dielectric layer 20 are equal to the material composition and thickness h of the practical dielectric layer 30.In
In the present embodiment, which makes via transmission frequency measured by the measuring structure 2 as object is measured as the ginseng
Number, then after enabling computer calculate by the parameter, a target value (the i.e. dielectric constant of the dielectric layer 20 or the reality can be obtained
The dielectric constant of dielectric layer 30).
First conducting wire 23 is set on the dielectric layer 20 and has a first end 230.
In this present embodiment, which is the made metal wire (such as copper wire) of patterning process, as input
The input terminal of signal (is tested) in port, and the line width W of first conducting wire 23 is equal to the line width W of the line layer 31.
In addition, the shape of the first end 230 corresponds to the 21 portion outboard facial contour of the first ring body, such as loop or semicircle
Circle.
Second conducting wire 24 is set on the dielectric layer 20 and has the second end 240 of the corresponding first end 230.
In this present embodiment, which is the made metal wire (such as copper wire) of patterning process, as output
The output end of signal (is tested) in port, and the line width W of second conducting wire 24 is equal to the line width W of the line layer 31.
In addition, the shape of the second end 240 corresponds to the 21 portion outboard facial contour of the first ring body, such as loop or semicircle
Circle.
First ring body 21 is set on the dielectric layer 20 and compartment of terrain is set to the first end 230 and the second end
Between 240, make to be respectively formed gap d 1 between first ring body 21 and the first end 230 and between the second end 240,
D2, and first ring body 21 is enabled to be able to the electrical couplings first end 230 and the second end 240 respectively.
In this present embodiment, which is the made metal wire (such as copper wire) of patterning process, is circular rings,
And the line width W of first ring body 21 is equal to the line width W of the line layer 31.
In addition, the first end 230 is to be oppositely disposed (such as separate type is face-to-face) to have to constitute one with the second end 240
The framework A of gap a is located at first ring body 21 in framework A.It should be appreciated that ground, which can be other geometry
The ring body of shape, and the shape of the first end 230 and the second end 240 (i.e. the framework A) can be according to first ring bodies 21
Facial contour work in outside changes (i.e. the side profile that the shape of the framework corresponds to first ring body 21).
Also, first ring body 21 corresponds to the gap d 1, the lateral limit L1 of d2 defines electricity caused by first ring body 21
Property coupling coupling amount size.
Second ring body 22 is set on the dielectric layer 20 and compartment of terrain is disposed concentrically about outside the first ring body 21, and is spaced
Ground surrounds the first end 230 and the second end 240, make between second ring body 22 and the first end 230 and this second
Clearance t 1, t2 is respectively formed between end 240, and enable second ring body 22 be able to respectively the electrical couplings first end 230 with
The second end 240.
In this present embodiment, second ring body 22 metal wire (such as copper wire) made for patterning process, and second ring
The line width W of body 22 is equal to the line width W of the line layer 31.
In addition, second ring body 22 is because being configured with first conducting wire 23 and second conducting wire between first ring body 21
24, and the ring body of two-part (discontinuous) is presented, arc the ring portion 22a, 22b such as mutually separated comprising two.
Also, those ring portions 22a, 22b are relative configuration (such as separate type is face-to-face), make framework A and first ring body 21
In second ring body 22.It should be appreciated that ground, which can be the ring body of other geometries, and second ring body
22 shape can be made to change according to the outside facial contour of first ring body 21 or framework A.
In addition, second ring body 22 corresponds to the clearance t 1, the lateral limit L2 of t2 is defined caused by second ring body 22
The coupling amount of electrical couplings.
On the other hand, in the embodiment in the rounded ring body of Fig. 2A for 5G frequency, the perimeter of first ring body 21 is (by this
The first external diameter R1 of first ring body 21 is defined) length of the wavelength of corresponding first transmission frequency (Preset Transfer frequency), and this
The perimeter (being defined by the second external diameter R2 of second ring body 22) of two ring bodies 22 is corresponding second transmission frequency (Preset Transfer frequency)
Wavelength length.For example, first transmission frequency is, for example, 39 gigahertz (GHZ)s (GHz) (38 × 109Hertz), the length of wavelength is
1/39 nanometer, make 4.608 ㎜ of Zhou Changwei (0.733 ㎜ of first external diameter R1) of first ring body 21；And second transmission frequency
For example, 28 gigahertz (GHZ)s, the length of wavelength are 1/28 nanometer, make 6.428 ㎜ of Zhou Changwei (the second external diameter R2 of second ring body 22
For 1.023 ㎜).It should be appreciated that ground, the transmission frequency of the ring body is smaller, and wavelength is bigger, then its perimeter is bigger.
The measuring structure 2 can be on demand in forming a ground plane 25 on another dielectric layer 20.
When carrying out measuring dielectric constant of the dielectric layer 20 when finished product state (solid-state), first by a measuring instrument (figure
Do not show) electric current by first conducting wire 23, make the first end 230 of first conducting wire 23 simultaneously with first ring body 21 and should
Second ring body 22 generates electrical couplings, enables the current lead-through to first ring body 21 and second ring body 22, later, first ring
Body 21 and second ring body 22 successively can generate electrical couplings with the second end 240 of second conducting wire 24, enable the current lead-through
It is back to the measuring instrument to second conducting wire 24, the measuring instrument is made successively to obtain two groups of frequency peaks, as shown in Figure 4
The Frequency point f1 (its numerical value is -6.02) of first transmission frequency (38GHz) and the Frequency point of the second transmission frequency (23.75GHz)
F2 (its numerical value is -8.85).
Later, the resulting frequency peak of Fig. 4 (i.e. Frequency point f1, f2) is inputted in computer (not shown) and is calculated, with
Obtain corresponding to the dielectric constant of each frequency peak.
In this present embodiment, the model of the true package substrate 3 is built in the computer, to carry out the measurement of parameter (such as frequency
Rate point f1, f2, i.e. frequency peak) and relative dimensions measurement (such as line of the thickness h of the practical dielectric layer 30, the line layer 31
Wide W and the perimeter of first and second ring body 21,22 etc.) etc..
In addition, the computer is according to physical equation (1) as follows and (2):
, to calculate out the dielectric constant of two frequency ranges (the first transmission frequency and the second transmission frequency).Specifically, it will measure
F value of the numerical value of the Frequency point f1, f2 (frequency peak) that arrive as formula (1), and λ be those ring bodies (first ring body 21 with
Second ring body 22) practical side length (such as perimeter), to calculate a constant ε by formula (1)e, then Jie that will actually measure
H value of the thickness h of electric layer 20 (or practical dielectric layer 30) as formula (2), and the line width W of concussion measurement group 2a (i.e. should
The line width W of line layer 31) W value as formula (2), and by constant ε derived from formula (1) instituteeFormula (2) are brought into, to obtain
The dielectric layer 20 (or practical dielectric layer 30) is under solid-state or specific transmission frequency (the first transmission frequency or the second transmission frequency)
Under dielectric constant numerical value εr。
Finally, by numerical value input simulation software (such as HFSS, ADS) of dielectric constant when solid-state of dielectric layer 20,
To carry out the simulation job for the semiconductor package part model that one configures the actual package substrate 3, judge that the dielectric layer 30 is whereby
The no demand for meeting the actual package substrate 3, that is, when meeting demand, can just start to carry out the actual package substrate 3
Production.In other words, before making the actual package substrate 3, the dielectric constant of the dielectric layer 20 when solid-state can be measured, first to sentence
Whether the practical dielectric layer 30 that breaks can use.
Therefore, measuring structure 2 of the invention designs the material of the dielectric layer 20 according to the structure of the actual package substrate 3
Composition with thickness h be equal to the practical dielectric layer 30 material composition and thickness h, and the line width W of concussion measurement group 2a be equal to be somebody's turn to do
The line width W of line layer 31 makes the news of metrology operation to calculate the line width W for meeting specified impedance (such as 50 ohm of (Ohm) impedances)
Number transmitting is more smooth.
In addition, second end of the shape (as semicircle) of the first end 230 of first conducting wire 23 with second conducting wire 24
The outside facial contour of shape (as semicircle) corresponding first ring body 21 in portion 240 or the inside facial contour of second ring body 22,
To increase lateral limit L1, the L2 of first ring body 21 or the second ring body 22 to generate electrical couplings, therefore compared to existing skill
Art when Yu Jinhang metrology operation, can increase the coupling amount of the electric current, to avoid noise interference, and even if the measuring instrument it is dynamic
State range is insufficient, and resulting noise can be greatly decreased, thus can improve captured frequency peak (i.e. Frequency point f1, f2) or frequency
The accuracy of band.
Also, the concussion measurement group 2a of the measuring structure 2 includes the first ring body of inner ring 21 and the second ring body of outer ring 22, and this
The length of the wavelength of corresponding first transmission frequency of the first external diameter R1 (perimeter or side length) of one ring body 21, and second ring body 22
The length of the wavelength of corresponding second transmission frequency of second external diameter R2 (perimeter or side length), can measure in single secondary metrology operation
Two frequency peaks (i.e. Frequency point f1, f2) out, therefore compared to the measurement concussion portion of existing imitated structure, if using of the invention
When measuring structure 2 measures the dielectric constant of multiple frequency bands, the quantity for making the measuring structure 2 can be reduced, thus can be reduced material
Cost, and can substantially shorten the time of metrology operation.
Above-described embodiment is only to be illustrated the principle of the present invention and its effect, and is not intended to limit the present invention.Appoint
What one of ordinary skill in the art without departing from the spirit and scope of the present invention, modifies to above-described embodiment.Therefore
The scope of the present invention, should be as listed in the claims.
Claims (10)
1. a kind of measuring structure, which is characterized in that the measuring structure includes:
Dielectric layer；
First conducting wire is set on the dielectric layer and has first end；
Second conducting wire is set on the dielectric layer and has the second end of the corresponding first end；
First ring body is set on the dielectric layer and is spaced between the first end and the second end, and electrical coupling
Close the first end and the second end；And
Second ring body is set on the dielectric layer and compartment of terrain is surrounded on outside the first ring body, and compartment of terrain surrounds the first end
With the second end, and with the first end and the second end electrical couplings.
2. measuring structure according to claim 1, which is characterized in that the shape of the first end correspond to first ring body or
The side profile of second ring body.
3. measuring structure according to claim 1, which is characterized in that the shape of the second end correspond to first ring body or
The side profile of second ring body.
4. measuring structure according to claim 1, which is characterized in that the first end and the second end constitute a framework,
It is located at first ring body in the framework.
5. measuring structure according to claim 4, which is characterized in that the shape of the framework corresponds to the side of first ring body
Profile.
6. measuring structure according to claim 1, which is characterized in that between first ring body and the first end and this
The lateral limit for being respectively formed gap between two ends, and first ring body being enabled to correspond to the gap defines produced by first ring body
Electrical couplings coupling amount.
7. measuring structure according to claim 1, which is characterized in that between second ring body and the first end and this
The lateral limit for being respectively formed gap between two ends, and second ring body being enabled to correspond to the gap defines produced by second ring body
Electrical couplings coupling amount.
8. measuring structure according to claim 1, which is characterized in that dielectric of the measuring structure to measure the dielectric layer
Constant, and the dielectric constant corresponds to the transmission frequency of signal.
9. measuring structure according to claim 8, which is characterized in that the side length of first ring body corresponds to the transmission frequency
The length of wavelength.
10. measuring structure according to claim 8, which is characterized in that the side length of second ring body corresponds to the transmission frequency
Wavelength length.
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| TW106144812A TWI628443B (en) | 2017-12-20 | 2017-12-20 | Measuring structure |
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| JP2006038703A (en) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | Dielectric constant measuring method and transmission line design method |
| US20090015266A1 (en) * | 2005-03-23 | 2009-01-15 | Nec Corporation | Resonator, printed board, and method for measuring complex dielectric constant |
| JP2006311491A (en) * | 2005-03-29 | 2006-11-09 | Kyocera Corp | Ring resonator and method of measuring dielectric characteristic of dielectric thin film using the same |
| CN102721707A (en) * | 2011-03-30 | 2012-10-10 | 南京邮电大学 | Device for measuring LTCC shrinkage and dielectric constant |
| CN204613305U (en) * | 2015-02-11 | 2015-09-02 | 嘉兴佳利电子有限公司 | A kind of LTCC resonant ring for the test of LTCC material dielectric constant |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI628443B (en) | 2018-07-01 |
| CN109950229B (en) | 2020-11-03 |
| TW201928370A (en) | 2019-07-16 |
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