CN109950146A - A kind of method that electron beam evaporation prepares charge trap memory part - Google Patents
A kind of method that electron beam evaporation prepares charge trap memory part Download PDFInfo
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- CN109950146A CN109950146A CN201910196513.7A CN201910196513A CN109950146A CN 109950146 A CN109950146 A CN 109950146A CN 201910196513 A CN201910196513 A CN 201910196513A CN 109950146 A CN109950146 A CN 109950146A
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Abstract
The invention discloses a kind of methods that electron beam evaporation prepares charge trap memory part, tunnel layer, accumulation layer, barrier layer and top electrode is deposited in surface of silicon sequence using electron beam evaporation depositing system, then the sample that deposited film is overturn, the electrode under silicon substrate backside deposition forms charge trap memory part.This method is easy to operate, and film quality is high, and thickness is controllable.
Description
Technical field
The invention belongs to microelectronic component and its Material Field, it is related to a kind of electron beam evaporation and prepares charge trap memory part
Method.
Background technique
With the development of the society, information storage is increasingly taken seriously.Nonvolatile semiconductor memory member have storage density it is high,
The features such as data hold time is long is increasingly becoming the emphasis of industry research personnel concern.It is waited in numerous nonvolatile semiconductor memory members
It selects in structure, silicon-oxide-nitride-oxide-polysilicon (SONOS) type charge trap memory part is a kind of great
The storage organization of development prospect, wherein the and then oxide (SiO of silicon (Si)2) it is used as tunnel layer, nitride (Si3N4) conduct
Accumulation layer, and then polysilicon electrode oxide (SiO2) it is used as barrier layer.Traditional SONOS type charge trap memory part
Usually using chemical vapor deposition and the preparation of the method for sputtering, but for SiO2、ZrO2And Al2O3It is aoxidized etc. dystectic metal
Object, vapor deposition and sputtering preparation method still have some deficits, and electron beam evaporation prepare sull with speed fast, film matter
The advantages that amount is high, thickness is controllable.From the aspect of improving device preparation speed and improving film quality, we have invented a kind of electricity
The method that beamlet evaporation prepares charge trap memory part.By electron beam evaporation depositing system, the sequence on silicon (Si) substrate
Tunnel layer (SiO is deposited2), metal oxide accumulation layer, barrier layer (SiO2) and metal aluminium electrode, preparation process is easy to operate, thin
Film quality is high, and thickness is controllable.
Summary of the invention
It is easy to operate the present invention provides a kind of method that electron beam evaporation prepares charge trap memory part.
The method process that the electron beam evaporation prepares charge trap memory part is as follows:
A) hydrofluoric acid clean silicon (Si) substrate is utilized, the oxide on the surface Si is removed, Si substrate is then placed on electronics
On the substrate table of beam evaporation depositing system, evaporation material N is placed in crucible, N can be in SiO2And Al2O3In choose any one kind of them, heat
Substrate is to 200 DEG C, and the intracorporal pressure of holding chamber is 1 × 10 during vapor deposition-2Pa；
B) N of one layer of 3nm is deposited as tunnel layer, evaporation rate in Si substrate surface using electron beam evaporation depositing system
Control is 10nm/min, as shown in Fig. 1 (a)；
C) crucible is replaced, by ZrO2Evaporation material is placed in crucible, then using electron beam evaporation depositing system in tunnelling
One layer of ZrO is deposited in the layer surface N2Film is as accumulation layer, and thickness value within the scope of 5nm to 10nm, evaporation rate, which controls, is
10nm/min, the intracorporal pressure of holding chamber is 1 × 10 during vapor deposition-2Pa, as shown in Fig. 1 (b)；
D) crucible is replaced, evaporation material N is placed in crucible, N can be in SiO2And Al2O3In choose any one kind of them, then using electricity
Beamlet hydatogenesis system is in ZrO2It stores layer surface and one layer of N thin film is deposited as barrier layer, thickness is in 10nm to 20nm range
Interior value, it is ensured that barrier layer is same substance with tunnel layer, and evaporation rate control is 10nm/min, holding chamber during vapor deposition
Intracorporal pressure is 1 × 10-2Pa, as shown in Fig. 1 (c)；
E) crucible is replaced, metal M evaporation material is placed in crucible, is then hindered using electron beam evaporation depositing system in N
One layer of metal M is deposited as top electrode in barrier surface, thickness of electrode value within the scope of 100nm to 200nm, M can aluminium (Al),
It chooses any one kind of them in platinum (Pt), golden (Au), evaporation rate control is 10nm/min, and the intracorporal pressure of holding chamber is 1 during vapor deposition
×10-2Pa, as shown in Fig. 1 (d)；
F) sample that film has been deposited on substrate table is overturn, is steamed using electron beam evaporation depositing system in Si substrate back
One layer of metal M is plated as lower electrode, thickness of electrode value within the scope of 100nm to 200nm, M can be in aluminium (Al), platinum (Pt), gold
(Au) it chooses any one kind of them in, it is ensured that top electrode and lower electrode are same substance, and evaporation rate control is 10nm/min, and process is deposited
The middle intracorporal pressure of holding chamber is 1 × 10-2Pa, as shown in Fig. 1 (e)；
G) structure using the charge trap memory part of electron beam evaporation depositing system preparation is as shown in Figure 2.
Detailed description of the invention
Fig. 1: N tunnel layer is deposited using electron beam evaporation in the method (a) that electron beam evaporation prepares charge trap memory part；
(b) ZrO is deposited using electron beam evaporation2Accumulation layer；(c) barrier layer N is deposited using electron beam evaporation；(d) it is steamed using electron beam
Top electrode is deposited in barrier layer surface in hair；(e) electron beam evaporation electrode under the vapor deposition of the silicon substrate back side is utilized.
Fig. 2: the structural schematic diagram of the charge trap memory part of electron beam evaporation depositing system preparation.
Specific embodiment
Embodiment 1: the preparation process that electron beam evaporation prepares charge trap memory part is as follows: (tunnel layer and barrier layer
It is SiO2)
A) hydrofluoric acid clean Si substrate is utilized, the oxide on the surface Si is removed, Si substrate is then placed on electron beam and is steamed
On the substrate table for sending out depositing system, by SiO2Evaporation material is placed in crucible, is heated substrate to 200 DEG C, is kept during vapor deposition
The intracorporal pressure of chamber is 1 × 10-2Pa；
B) SiO of one layer of 3nm is deposited in Si substrate surface using electron beam evaporation depositing system2As tunnel layer, vapor deposition
Speed control is 10nm/min；
C) crucible is replaced, by ZrO2Evaporation material is placed in crucible, then using electron beam evaporation depositing system in SiO2Tunnel
It wears layer surface and one layer of 10nm ZrO is deposited2For film as accumulation layer, evaporation rate control is 10nm/min, is kept during vapor deposition
The intracorporal pressure of chamber is 1 × 10-2Pa；
D) crucible is replaced, by SiO2Evaporation material is placed in crucible, then using electron beam evaporation depositing system in ZrO2It deposits
One layer of 20nm SiO is deposited in reservoir surface2For film as barrier layer, evaporation rate control is 10nm/min, is kept during vapor deposition
The intracorporal pressure of chamber is 1 × 10-2Pa；
E) crucible is replaced, metal Al evaporation material is placed in crucible, is then existed using electron beam evaporation depositing system
SiO2Barrier layer surface is deposited one layer of 100nm metal Al and is used as top electrode, and evaporation rate control is 10nm/min, during vapor deposition
The intracorporal pressure of holding chamber is 1 × 10-2Pa；
F) sample that film has been deposited on substrate table is overturn, is steamed using electron beam evaporation depositing system in Si substrate back
One layer of 100nm metal Al is plated as lower electrode, evaporation rate control is 10nm/min, the intracorporal pressure of holding chamber during vapor deposition
It is 1 × 10-2Pa。
Embodiment 2: the preparation process that electron beam evaporation prepares charge trap memory part is as follows: (tunnel layer and barrier layer
It is Al2O3)
A) hydrofluoric acid clean Si substrate is utilized, the oxide on the surface Si is removed, Si substrate is then placed on electron beam and is steamed
On the substrate table for sending out depositing system, by Al2O3Evaporation material is placed in crucible, is heated substrate to 200 DEG C, is kept during vapor deposition
The intracorporal pressure of chamber is 1 × 10-2Pa；
B) Al of one layer of 3nm is deposited in Si substrate surface using electron beam evaporation depositing system2O3As tunnel layer, vapor deposition
Speed control is 10nm/min；
C) crucible is replaced, by ZrO2Evaporation material is placed in crucible, then using electron beam evaporation depositing system in Al2O3
One layer of 10nm ZrO is deposited in tunnelling layer surface2For film as accumulation layer, evaporation rate control is 10nm/min, is protected during vapor deposition
Holding the intracorporal pressure of chamber is 1 × 10-2Pa；
D) crucible is replaced, by Al2O3Evaporation material is placed in crucible, then using electron beam evaporation depositing system in ZrO2
It stores layer surface and one layer of 20nmAl is deposited2O3For film as barrier layer, evaporation rate control is 10nm/min, is protected during vapor deposition
Holding the intracorporal pressure of chamber is 1 × 10-2Pa；
E) crucible is replaced, metal Al evaporation material is placed in crucible, is then existed using electron beam evaporation depositing system
Al2O3Barrier layer surface is deposited one layer of 100nm metal Al and is used as top electrode, and evaporation rate control is 10nm/min, during vapor deposition
The intracorporal pressure of holding chamber is 1 × 10-2Pa；
F) sample that film has been deposited on substrate table is overturn, is steamed using electron beam evaporation depositing system in Si substrate back
One layer of 100nm metal Al is plated as lower electrode, evaporation rate control is 10nm/min, the intracorporal pressure of holding chamber during vapor deposition
It is 1 × 10-2Pa。
Claims (6)
1. a kind of method that electron beam evaporation prepares charge trap memory part, it is characterised in that specific step is as follows:
A) the clear Si substrate of hydrofluoric acid is utilized, the oxide on the surface Si is removed, Si substrate is then placed on electron beam evaporation deposition
On the substrate table of system, evaporation material N is placed in crucible, N can be in SiO2And Al2O3In choose any one kind of them, heating substrate is to 200
DEG C, the intracorporal pressure of holding chamber is 1 × 10 during vapor deposition-2Pa；
B) N of one layer of 3nm is deposited as tunnel layer, evaporation rate control in Si substrate surface using electron beam evaporation depositing system
For 10nm/min；
C) crucible is replaced, by ZrO2Evaporation material is placed in crucible, then using electron beam evaporation depositing system in tunnel layer N table
One layer of ZrO is deposited in face2Film is 10nm/ as accumulation layer, thickness value within the scope of 5nm to 10nm, evaporation rate control
Min, the intracorporal pressure of holding chamber is 1 × 10 during vapor deposition-2Pa；
D) crucible is replaced, evaporation material N is placed in crucible, N can be in SiO2And Al2O3In choose any one kind of them, then utilize electron beam
Hydatogenesis system is in ZrO2It stores layer surface and one layer of N thin film is deposited as barrier layer, thickness takes within the scope of 10nm to 20nm
Value, it is ensured that barrier layer is same substance with tunnel layer, and evaporation rate control is 10nm/min, during vapor deposition in holding chamber body
Pressure be 1 × 10-2Pa；
E) crucible is replaced, metal M evaporation material is placed in crucible, then using electron beam evaporation depositing system on the barrier layer N
One layer of metal M is deposited as top electrode in surface, and thickness of electrode value within the scope of 100nm to 200nm, M can be in Al, Pt, Au
It chooses any one kind of them, evaporation rate control is 10nm/min, and the intracorporal pressure of holding chamber is 1 × 10 during vapor deposition-2Pa；
F) sample that film has been deposited on substrate table is overturn, is deposited one in Si substrate back using electron beam evaporation depositing system
Layer metal M can choose any one kind of them as lower electrode, thickness of electrode value within the scope of 100nm to 200nm, M in Al, Pt, Au, really
It protects top electrode and lower electrode is same substance, evaporation rate control is 10nm/min, the intracorporal pressure of holding chamber during vapor deposition
Strong is 1 × 10-2Pa。
2. a kind of method that electron beam evaporation prepares charge trap memory part as described in claim 1, it is characterised in that benefit
Tunnel layer, accumulation layer, barrier layer and top electrode is sequentially deposited in deposited by electron beam evaporation depositing system on a si substrate.
3. a kind of method that electron beam evaporation prepares charge trap memory part as described in claim 1, it is characterised in that electricity
Tunnel layer, accumulation layer, barrier layer, top electrode and the lower electrode of lotus trap memory part are by electron beam evaporation depositing system shape
At.
4. a kind of method that electron beam evaporation prepares charge trap memory part as described in claim 1, it is characterised in that tunnel
The evaporation rate for wearing layer, accumulation layer, barrier layer, top electrode and lower electrode is 10nm/min.
5. a kind of method that electron beam evaporation prepares charge trap memory part as described in claim 1, it is characterised in that electricity
The tunnel layer of beamlet evaporation preparation and barrier layer are same substance, and top electrode and lower electrode are same substance.
6. application of the charge trap memory part of electron beam evaporation preparation as claimed in claims 1-5 in information storage.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117838A (en) * | 2009-12-30 | 2011-07-06 | 中国科学院微电子研究所 | Charge trapping type nonvolatile memory and manufacturing method thereof |
| CN104659208A (en) * | 2015-02-05 | 2015-05-27 | 中国科学院微电子研究所 | Non-volatile resistance random access memory and preparation method thereof |
| CN105990520A (en) * | 2015-02-05 | 2016-10-05 | 中国科学院微电子研究所 | Nonvolatile resistive random access memory device and preparation method thereof |
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2019
- 2019-03-04 CN CN201910196513.7A patent/CN109950146A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117838A (en) * | 2009-12-30 | 2011-07-06 | 中国科学院微电子研究所 | Charge trapping type nonvolatile memory and manufacturing method thereof |
| CN104659208A (en) * | 2015-02-05 | 2015-05-27 | 中国科学院微电子研究所 | Non-volatile resistance random access memory and preparation method thereof |
| CN105990520A (en) * | 2015-02-05 | 2016-10-05 | 中国科学院微电子研究所 | Nonvolatile resistive random access memory device and preparation method thereof |
Non-Patent Citations (5)
| Title |
|---|
| GANG DU ET AL: "Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu/ZrO2/Pt devices", 《JOURNAL OF PHYSICS D: APPLIED PHYSICS》 * |
| JING LIU ET AL: "A metal/Al2O3/ZrO2/SiO2/Si (MAZOS)structure for high-performance non-volatile memory application", 《SEMICONDUCTOR SCIENCE AND TECHNOLOGY》 * |
| X. D. HUANG ET AL: "Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications", 《APPLIED PHYSICS LETTERS》 * |
| 南京工学院: "《真空技术及设备》", 31 July 1981 * |
| 叶志镇等: "《半导体薄膜技术与物理》", 30 September 2008 * |
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Application publication date: 20190628 |