CN109946589B - Method and device for detecting bad electricity of display panel - Google Patents
Method and device for detecting bad electricity of display panel Download PDFInfo
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Abstract
The embodiment of the invention provides a method and a device for detecting poor electricity of a display panel, wherein the method for detecting the poor electricity of the display panel comprises the following steps: determining a target area by using an optical observation method, wherein the target area is an area with poor electricity on the display panel; exposing the bottom layer circuit of the target area; forming a lead wire, and connecting the bottom layer circuit of the target area to the signal wire through the lead wire; the target area is isolated from other peripheral areas, and an electric signal is input to the bottom layer circuit of the target area by using a signal line to carry out circuit testing. Therefore, the specific position of the display panel with the chemical defects can be effectively determined by the detection method provided by the embodiment of the invention, and the reasons of the defects of the display panel in the design, process or manufacturing process can be further found by carrying out FIB analysis test on the target area, so that the purpose of improving the qualification rate of the display panel is achieved.
Description
Technical Field
The invention relates to the field of circuit failure analysis and related micro-structure electrical property test, in particular to a method and a device for detecting poor electrical property of a display panel.
Background
In the display process of a flexible Organic Light-Emitting Diode (OLED), due to the defects generated in the process or design, points, lines, or Mura (Mura refers to the phenomenon of various traces caused by non-uniform brightness of a display panel) may occur on the macro display. In order to ensure the quality of the display panel, the position of the display panel with the optical defect needs to be detected, but the existing detection method cannot accurately position the position with the optical defect.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention provide a method and an apparatus for detecting an electrical defect of a display panel, so as to solve a problem that a position where an optical defect is generated cannot be accurately located by using an existing detection method.
According to an aspect of an embodiment of the present invention, there is provided a method for detecting a display panel electrical defect, including:
determining a target area by using an optical observation method, wherein the target area is an area with poor electricity on a display panel;
exposing underlying circuitry of the target area;
forming a conductive line through which a bottom layer circuit of the target area is connected to the signal line;
and isolating the target area from other peripheral areas, and inputting an electric signal to a bottom layer circuit of the target area by using the signal line to perform circuit test.
Optionally, the exposing the underlying circuit of the target area includes:
and removing the surface inorganic layer of the target area to expose the active layer.
Optionally, the removing the surface inorganic layer of the target region to expose the active layer includes:
and removing the surface inorganic layer of the target area through a Focused Ion Beam (FIB) process to expose the active layer.
Optionally, the forming a conductive line through which a bottom layer circuit of the target area is connected to the signal line includes:
and depositing a metal layer in the target area, and connecting the bottom layer circuit of the target area to the signal line through the metal layer.
Optionally, the depositing a metal layer on the target area, and connecting the bottom layer circuit of the target area to the signal line through the metal layer includes:
and depositing a metal layer on the target area through an FIB (focused ion beam) process, and connecting the bottom layer circuit of the target area to a signal line through the metal layer.
Optionally, after the step of forming a conductive line, connecting the underlying circuit of the target area to a signal line through the conductive line, and before the step of isolating the target area from the surroundings, inputting an electrical signal to the underlying circuit of the target area by using the signal line for circuit testing, the method further comprises:
and removing residual metal around the target area.
Optionally, the removing the residual metal around the target region includes:
and utilizing FIB chemical gas to enhance etching, and removing residual metal around the target area.
According to another aspect of the embodiments of the present invention, there is also provided an apparatus for detecting an electrical defect of a display panel, including:
the device comprises a determining module, a judging module and a judging module, wherein the determining module is used for determining a target area by using an optical observation method, and the target area is an area with poor electricity on a display panel;
the sputtering module is used for exposing the bottom layer circuit of the target area;
a deposition module for forming a conductive line through which a bottom layer circuit of a target area is connected to a signal line;
and the test module is used for isolating the target area from other peripheral areas and inputting the electric signals to the bottom layer circuit of the target area by using the signal lines to carry out circuit test.
Optionally, the sputtering module comprises:
and the sputtering unit is used for removing the inorganic layer on the surface of the target area to expose the active layer.
Optionally, the deposition module comprises:
and the deposition unit is used for depositing a metal layer on the target area and connecting the bottom layer circuit of the target area to the signal line through the metal layer.
The embodiment of the invention has the following beneficial effects:
in the embodiment of the invention, a target area is determined, then a bottom layer circuit of the target area is exposed, then a metal layer is deposited in the target area to protect the bottom layer circuit, two ends of the metal layer are respectively connected with the bottom layer circuit and an SD (Signal Data) conducting wire, and then an electrical Signal is input to the bottom layer circuit through the SD conducting wire to carry out circuit testing. Therefore, the specific position of the display panel with the chemical defects can be effectively determined through the detection method provided by the embodiment of the invention, and the reasons of the display panel with the chemical defects in the design, process or manufacturing process can be further found through FIB (focused ion beam) analysis and test of the target area, so that the purpose of improving the qualification rate of the display panel is achieved.
Drawings
FIG. 1 is a flowchart illustrating a method for detecting a display panel with poor electrical characteristics according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a display panel according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating an effect of positioning a target area according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating the effect of sputtering on a target area according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating an effect of depositing a metal layer on a target region according to an embodiment of the present invention;
FIG. 6 is a second exemplary illustration of a second effect of depositing a metal layer in a target area according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating the effect of isolating a target area according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the operation of a beam-induced resistance change device;
FIG. 9 is a schematic diagram illustrating a pricking test performed on a display panel according to an embodiment of the invention;
FIG. 10 is a schematic illustration of a specific location of a target area according to an embodiment of the present invention;
FIG. 11 is a second schematic diagram illustrating the specific location of a target area according to the second embodiment of the present invention;
FIG. 12 is a third exemplary illustration of the specific location of a target area according to the present invention;
FIG. 13 is a schematic diagram illustrating an effect of the display panel according to the embodiment of the invention before removing the residual metal on the surface;
FIG. 14 is a schematic diagram illustrating an effect of the display panel of the embodiment of the invention after removing the residual metal on the surface;
fig. 15 is a schematic structural diagram of a device for detecting electrical defects of a display panel according to an embodiment of the invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
The terms first, second and the like in the description and in the claims of the present invention are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein.
Generally, display problems such as dots, lines, mura, and the like, which occur in a display process of a display panel, are mostly caused by a defect in a circuit of a circuit board. For the problem of circuit defects of the circuit board, the position where the Optical defects are generated can be found through microscope observation, AOI (Automated Optical Inspection) matching and the like. However, due to the limited resolution of the optical microscope and the limited structure of the film layer of the product, the optical microscope is difficult to find the tiny residue or defect in the circuit of the circuit board, and the AOI system is also difficult to pick up the tiny residue or defect due to the problem of the legal setting.
Meanwhile, the existing detection method has the analytic thinking that: the bad position is limited in a certain area by circuit signal adjustment, and then the FIB analysis is carried out on the area. The detection method can find out the defects among the film layers, but has the problems of extremely large area range, long FIB analysis time and more cutting times, so that the utilization rate of FIB equipment is low, and the efficiency of failure analysis is reduced.
In order to solve the above problems, an embodiment of the present invention provides a method for detecting electrical defects of a display panel, and fig. 1 is a flowchart of the method for detecting electrical defects of a display panel according to the embodiment of the present invention, and referring to fig. 1, a specific flow of the method is as follows:
step 101: determining a target area by using an optical observation method, wherein the target area is an area with poor electricity on a display panel;
in an embodiment of the present invention, the optical observation method may be a method for observing and determining a line defect on the display panel by an optical microscope or an AOI matching method, where fig. 2 is a line distribution diagram of the display panel.
In the embodiment of the present invention, the area on the display panel where the electrical defect occurs may be an area where the display panel displays an abnormality due to a circuit defect of the circuit board, that is, the target area may be an area where the display panel displays an abnormality due to a circuit defect of the circuit board.
In the embodiment of the present invention, the target region may be determined by observing the lighting state of the display panel, for example: the display panel is in a lighting state by sending a lighting machine signal to the display panel through the lighting operation device, and after the display panel is debugged through the lighting machine signal, a target area can be positioned, and the range of the target area on the display panel can be further reduced, wherein the range of the target area can be reduced to a plurality of pixel ranges after the lighting machine signal is debugged.
Fig. 3 is a schematic diagram illustrating an effect of positioning a target area by adjusting a lighting machine signal, where a white area 10 in fig. 3 is the target area, and after the display panel is adjusted by the lighting machine signal, a range of the white area 10 in fig. 3 in the display panel can be further reduced.
Step 102: exposing underlying circuitry of the target area;
in the embodiment of the invention, the surface inorganic layer of the target area can be removed to expose the active layer, so as to expose the underlying circuit of the target area.
Further, the surface inorganic layer of the target region may be removed by a Focused Ion Beam (FIB) process to expose the active layer.
Referring to fig. 4, the surface inorganic layer of the target area 20 is sputtered by the FIB process, and it is required to accurately control the sputtering depth during sputtering so that the target area 20 exposes the active layer 30. Taking LTPS (Low Temperature Poly-silicon) TFT (Thin Film Transistor) display panel as an example, the p-Si (active layer) can be exposed by sputtering the surface inorganic layer of the target region 20 through FIB process.
Step 103: forming a conductive line through which a bottom layer circuit of the target area is connected to the signal line;
in the embodiment of the invention, a metal layer may be deposited on the target area to form a conducting wire, the metal layer connects the bottom layer circuit of the target area to a signal line, and an electrical signal (for example, a lighting machine signal) may be input to the target area through the signal line, so as to perform a circuit test on the display panel through the input electrical signal.
In the embodiment of the present invention, the material of the metal layer may be Pt (platinum) or W (tungsten), but is not limited thereto.
In an embodiment of the present invention, a metal layer may be deposited on the target area by a FIB process, and underlying circuitry of the target area may be connected to signal lines through the metal layer.
Referring to fig. 5 and 6, a metal layer (e.g., pt) 40 is deposited in the target area 20 by FIB process such that the metal layer 40 overlaps the active layer (e.g., p-Si) and the adjacent SD (Signal Data) line 50, respectively, and the metal layer 40 overlaps the SD line 50 for reducing contact resistance, thereby enabling electrical signals to be successfully transmitted into the target area 20. Note that the SD line 50 shown in fig. 5 and 6 is the signal line described above.
Step 104: and isolating the target area from other peripheral areas, and inputting an electric signal to a bottom layer circuit of the target area by using the signal line to perform circuit test.
In the embodiment of the present invention, the lines of the layers in the other areas around the target area may be cut by FIB sputtering, and the target area may be isolated, that is, the circuits in the target area are short-circuited with the lines of the layers in the other areas around the target area, as shown in fig. 7. Fig. 8 is a schematic diagram of an OBIRCH (optical beam induced resistance change) device, and as shown in fig. 8, first, the laser 60 is scanned on the surface (front surface and/or back surface) of the display panel to obtain the connection position inside the display panel, and a temperature gradient is generated on the display panel, which may cause a resistance change, and the position on the display panel where an optical defect occurs is located through comparison of the resistance change.
It should be noted that the relationship between the heat change and the resistance change of the display panel in the OBIRCH test is specifically as follows
△ρ＝ρ 0 ×α×TCR(△T) 1)
Wherein, deltaT is the heat change generated on the surface of the sample after the sample is heated by the laser;
ρ 0 : resistivity of the tested material at T0 (room temperature);
Δ ρ: resistivity changes due to temperature changes;
TCR: temperature coefficient of resistance;
i: loop current before laser heating;
r: resistance of the sample before laser irradiation;
Δ R/R: the ratio of the resistance change value to the resistance of the sample irradiated with the laser beam at the same point.
It should be noted that when the same material is irradiated with laser light of a fixed energy, Δ R/R is a fixed value, and only changes in the properties of the material will cause changes in Δ R/R.
It can be seen from the above formula that if there is a physical defect in the integrated circuit, the material property of the region where the defect is located will be changed inevitably, and if the material property is changed, Δ I after laser irradiation will be changed correspondingly, and will be shown by different brightness and darkness contrast on the image acquired by OBIRCH, thereby achieving the effect of positioning the bad region on the display panel.
Referring to fig. 9, the OBIRCH equipment board may be used to supply power to the display panel, perform an OBIRCH test on the display panel, and determine a location on the display panel where the optical defect occurs. Fig. 10 to 12 are schematic diagrams of positions of optical defects generated on the display panel under different magnifications, and the magnifications corresponding to fig. 10 to 12 are sequentially reduced, and as can be seen from fig. 10 to 12, positions of optical defects generated on the display panel under different magnifications can be observed through the OBIRCH device, so that the positions 70 of optical defects generated on the display panel can be determined more intuitively and clearly.
It should be noted that the OBIRCH device can effectively detect defects of metal and silicon, and the accuracy of OBIRCH can reach 1 μm. Therefore, the scope of a bad area can be reduced by carrying out circuit test on the display panel through the OBIRCH equipment, the detection precision can be improved, the FIB use efficiency can be effectively improved, and the failure analysis time can be shortened.
In addition, when depositing the metal layer on the target area, residual metal may exist around the target area, and it should be noted that the periphery of the target area refers to an area within a preset distance range along the periphery of the target area, for example: the white material in the rectangular area 80 shown in fig. 13 is the residual metal, and the residual metal existing around the target area may cause a test short circuit. In order to avoid testing short circuit, after the step of depositing the metal layer on the display panel, the residual metal existing around the target area may be removed, and fig. 14 is a schematic diagram illustrating the effect of the removal of the residual metal around the target area. Thus, between step 103 and step 104, the method may further comprise:
and removing residual metal around the target area.
Further, FIB chemical gas enhanced etching may be used to remove residual metal around the target area.
In the embodiment of the invention, a target area is determined, a bottom circuit of the target area is exposed, a metal layer is deposited in the target area to protect the bottom circuit, two ends of the metal layer are respectively connected with the bottom circuit and an SD lead, and an electrical signal is input to the bottom circuit through the SD lead to carry out circuit test. Therefore, the specific position of the display panel with the chemical defect can be effectively determined through the detection method provided by the embodiment of the invention, and the reason of the display panel with the chemical defect in the design, process or manufacturing process can be further found through FIB analysis testing of the target area, so that the purpose of improving the qualification rate of the display panel is achieved.
In order to solve the problem that the existing detection method cannot accurately position the defective area, the embodiment of the invention further provides a detection device for detecting the electrical defect of the display panel.
Referring to fig. 15, an embodiment of the present invention further provides a device 1500 for detecting an electrical defect of a display panel, where the device 1500 may specifically include:
a determining module 1501, configured to determine a target area by using an optical observation method, where an electrical defect occurs on the display panel;
a sputtering module 1502 for exposing underlying circuitry of the target area;
a deposition module 1503 for forming conductive lines through which underlying circuitry of the target area is connected to signal lines;
and the test module 1504 is used for isolating the target area from other peripheral areas and inputting electric signals to the bottom layer circuit of the target area by using the signal lines for circuit test.
Optionally, the sputtering module 1502 may include:
and the sputtering unit is used for removing the inorganic layer on the surface of the target area and exposing the active layer.
Optionally, the sputtering unit may include:
and the sputtering subunit is used for removing the surface inorganic layer of the target area through a focused ion beam FIB process to expose the active layer.
Alternatively, the deposition module 1503 may include:
and the deposition unit is used for depositing a metal layer on the target area and connecting the bottom layer circuit of the target area to the signal line through the metal layer.
Alternatively, the deposition unit may include:
and the deposition subunit is used for depositing a metal layer on the target area through an FIB (focused ion beam) process, and connecting the bottom layer circuit of the target area to the signal line through the metal layer.
Optionally, the detection apparatus may further include:
and the removing module is used for removing residual metal around the target area.
Optionally, the removing module may include:
and the removing unit is used for enhancing etching by using FIB chemical gas to remove residual metal around the target area.
In the embodiment of the invention, a target area is determined by a determination module 1501, a bottom circuit of the target area is exposed by a sputtering module 1502, a metal layer is deposited on the target area by a deposition module 1503 to protect the bottom circuit, two ends of the metal layer are respectively connected with the bottom circuit and an SD lead, and an electrical signal is input to the bottom circuit by a test module 1504 and the SD lead to perform circuit test. Therefore, the detection device provided by the embodiment of the invention can effectively determine the specific position of the display panel with the chemical defect, and can further find the reason of the display panel with the chemical defect in the design, process or manufacturing process by carrying out FIB analysis test on the target area, thereby achieving the purpose of improving the qualification rate of the display panel.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to encompass such modifications and variations.
Claims (7)
1. A method for detecting poor electrical characteristics of a display panel, comprising:
determining a target area by using an optical observation method, wherein the target area is an area with poor electricity on a display panel; the range of the target area is reduced to a plurality of pixel ranges;
exposing the bottom layer circuit of the target area through a focused ion beam process, specifically removing the surface inorganic layer of the target area to expose the active layer;
forming a conductive line through which a bottom layer circuit of a target area is connected to a signal line, wherein the signal line is an SD line adjacent to the exposed active layer;
removing residual metal around the target area;
and isolating the target area from other peripheral areas, and inputting an electric signal to a bottom layer circuit of the target area by using the signal line to perform circuit test.
2. The method of claim 1, wherein removing the surface inorganic layer of the target region to expose the active layer comprises:
and removing the surface inorganic layer of the target area by a focused ion beam FIB process to expose the active layer.
3. The method of claim 1, wherein forming conductive lines through which underlying circuitry of the target area is connected to signal lines comprises:
and depositing a metal layer in the target area, and connecting the bottom layer circuit of the target area to the signal line through the metal layer.
4. The method of claim 3, wherein depositing a metal layer on the target area, and connecting underlying circuitry of the target area to signal lines through the metal layer comprises:
and depositing a metal layer on the target area through an FIB (focused ion beam) process, and connecting the bottom layer circuit of the target area to a signal line through the metal layer.
5. The method of claim 1, wherein said removing residual metal around said target region comprises:
and utilizing FIB chemical gas to enhance etching, and removing residual metal around the target area.
6. An apparatus for detecting electrical defects of a display panel, comprising:
the determining module is used for determining a target area by using an optical observation method, wherein the target area is an area with poor electricity on the display panel; the range of the target area is reduced to a plurality of pixel ranges;
the sputtering module is used for exposing the bottom layer circuit of the target area through a focused ion beam process and comprises a sputtering unit which is used for removing the surface inorganic layer of the target area and exposing the active layer;
a deposition module for forming a conductive line through which a bottom layer circuit of a target area is connected to a signal line, wherein the signal line is an SD line adjacent to the exposed active layer;
the removing module is used for removing residual metal around the target area;
and the test module is used for isolating the target area from other peripheral areas and inputting an electric signal to a bottom layer circuit of the target area by using the signal line to carry out circuit test.
7. The detection device according to claim 6, wherein the deposition module comprises:
and the deposition unit is used for depositing a metal layer on the target area and connecting the bottom layer circuit of the target area to the signal line through the metal layer.
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| CN111638237A (en) * | 2020-05-07 | 2020-09-08 | 华东师范大学 | Characterization method of failure micro-area of nanoscale electrostatic protection device |
| CN114236364B (en) * | 2022-02-24 | 2022-05-31 | 上海聚跃检测技术有限公司 | Failure analysis method and system for integrated circuit chip |
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