CN109936354A - A kind of on/off circuit - Google Patents
A kind of on/off circuit Download PDFInfo
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- CN109936354A CN109936354A CN201711370858.7A CN201711370858A CN109936354A CN 109936354 A CN109936354 A CN 109936354A CN 201711370858 A CN201711370858 A CN 201711370858A CN 109936354 A CN109936354 A CN 109936354A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a kind of on/off circuits, to solve the problems, such as that it is larger that the on/off circuit of hand-held wearable device commonly used in the prior art has the power consumption shut down.The present invention provides a kind of on/off circuit, after input pulse signal, pulse signal conversion voltage signal control first switch unit is driven the first metal-oxide-semiconductor M1 conducting to system electrification by second switch unit, and export voltage signal to Power Management Unit, Power Management Unit, which powers for second switch unit and generates control signal, is input to second switch unit.Since Power Management Unit generation control signal is input to second switch unit during shutdown, powering on to system is cut off in the first metal-oxide-semiconductor M1 cut-off, and system is in close to zero power consumption state, the power consumption of reduction system in the power-offstate.
Description
Technical field
The present invention relates to Internet technical field, in particular to a kind of on/off circuit.
Background technique
Hand-held wearable device refer to be with wrist it is support or the clothes that is integrated into user or accessory it is a kind of just
Portable device, such as hand-held wearable device can be Intelligent bracelet, smartwatch and other wearable things, purpose
It is that convenient science and technology life is provided to people.It can be embedded in the technologies such as multimedia, sensor and wireless communication the clothing of people
In, pass through the interaction of software support and data, the function of hand-held wearable device is realized in the interaction in cloud.
The scheme of the common on/off circuit of wearable device is held in the prior art as shown in Figure 1, circuit arrangement master
It to realize in portion in the chip.By the cathode of the partial pressure line connection comparator of R6, R7, just by ON/OFF PIN connection comparator
Pole, the grid of the connection Q4 (PMOS) of comparator output, and then the starting of internal circuit is controlled, wearable set is held to realize
Standby on/off circuit can be waken up to booting normal operating condition.But due to existing comparator, and during shutdown
The power consumption access over the ground that R6 and R7 composition can not be cut off, causes in the state of shutdown, and comparator, R6 and R7 can exist obvious
Electric leakage the phenomenon that, to increase the power consumption of shutdown.
In conclusion the power consumption that the on/off circuit of hand-held wearable device commonly used in the prior art has shutdown is larger
The problem of.
Summary of the invention
The invention discloses a kind of on/off circuits, to solve opening for hand-held wearable device commonly used in the prior art
Shutdown circuit has that the power consumption of shutdown is larger.
The embodiment of the present invention provides a kind of on/off circuit, comprising: the first metal-oxide-semiconductor, first switch unit, second switch list
Member and Power Management Unit；
The source electrode of first metal-oxide-semiconductor is connect with external power supply, and drain electrode is connect with the system comprising the on/off circuit；
The first switch unit respectively with the source electrode of first metal-oxide-semiconductor and grid, the second switch unit and institute
State Power Management Unit connection；
Wherein, after the second switch unit is for the pulse signal outside input, the pulse signal is converted into electricity
Signal is pressed, and is exported to the Power Management Unit；
The Power Management Unit is used for after inputting the voltage signal, is generated opening control signal and is input to described the
Two switch units connect the second switch unit with the first switch unit；Or it after closing control signal input, produces
Raw closing control signal is input to the second switch unit, disconnects the second switch unit and the first switch unit
Connection；
The first switch unit is used for the Xiang Suoshu after the second switch unit is connect with the first switch unit
First metal-oxide-semiconductor inputs Continuity signal, keeps first metal-oxide-semiconductor in the conductive state, and in the second switch unit and institute
It states after first switch unit disconnects, the first metal-oxide-semiconductor of Xiang Suoshu inputs pick-off signal, and first metal-oxide-semiconductor is made to be in cut-off
State.
The embodiment of the present invention provides a kind of on/off circuit, including the first metal-oxide-semiconductor M1, first switch unit, second switch
Unit and Power Management Unit.After the pulse signal outside input, the second switch unit converts the pulse signal
Voltage signal controls the first switch unit, and the first switch unit drives the first metal-oxide-semiconductor M1 to be connected to system electrification,
And export the voltage signal to the Power Management Unit, the Power Management Unit is second switch unit power supply
And it generates control signal and is input to the second switch unit.Due to generating control by the Power Management Unit during shutdown
Signal is input to the second switch unit, and the first metal-oxide-semiconductor M1 is enabled to end, and cuts off powering on to system, and system is in close to zero
Power consumption state, it will reduce the power consumption of system in the power-offstate.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is a kind of structural schematic diagram of on/off circuit in the prior art；
Fig. 2 is a kind of structural schematic diagram of the module of on/off circuit of the embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of the first switch unit of on/off circuit of the embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of the second switch unit of on/off circuit of the embodiment of the present invention；
Fig. 5 is the circuit diagram that the first generates signal；
Fig. 6 is the circuit diagram of second of generation signal；
Fig. 7 is the circuit diagram that the third generates signal；
Fig. 8 is a kind of structural schematic diagram of the Power Management Unit of on/off circuit of the embodiment of the present invention；
Fig. 9 is a kind of structural schematic diagram of the anti-error starting module of on/off circuit of the embodiment of the present invention；
Figure 10 is a kind of complete circuit diagram of on/off circuit of the embodiment of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
It is described in detail to one step, it is clear that the described embodiments are only some of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
All other embodiment, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of on/off circuit, below a kind of specific embodiment of on/off circuit said
It is bright.
As shown in Fig. 2, the embodiment of the present invention provides a kind of on/off circuit, comprising: the first metal-oxide-semiconductor, first switch unit
11, second switch unit 12 and Power Management Unit 13；
The source electrode of first metal-oxide-semiconductor is connect with external power supply, and drain electrode is connect with the system comprising the on/off circuit；
The first switch unit 11 respectively with the source electrode of first metal-oxide-semiconductor and grid, the second switch unit 12
It is connected with the Power Management Unit 13；
Wherein, after the second switch unit 12 is for the pulse signal outside input, the pulse signal is converted
Voltage signal, and export to the Power Management Unit 13；
The Power Management Unit 13 is used for after inputting the voltage signal, and generation opening control signal is input to described
Second switch unit 12 connect the second switch unit 12 with the first switch unit 11；Or in closing control signal
It after input, generates closing control signal and is input to the second switch unit 12, make the second switch unit 12 and described the
One switch unit 11 disconnects；
The first switch unit 11 is used for after the second switch unit 12 is connect with the first switch unit 11,
Continuity signal is inputted to first metal-oxide-semiconductor, keeps first metal-oxide-semiconductor in the conductive state, and in the second switch list
After member 12 is disconnected with the first switch unit 11, the first metal-oxide-semiconductor of Xiang Suoshu inputs pick-off signal, makes the first MOS
Pipe is in off state.
What needs to be explained here is that first switch unit 11, second switch unit 12 can integrate in portion in the chip, it will
The cost that peripheral circuit can be saved, more economizes on resources.
The embodiment of the present invention provides a kind of on/off circuit, including the first metal-oxide-semiconductor M1, first switch unit, second switch
Unit and Power Management Unit.After the pulse signal outside input, the second switch unit converts the pulse signal
Voltage signal controls the first switch unit, and the first switch unit drives the first metal-oxide-semiconductor M1 to be connected to system electrification,
And export the voltage signal to the Power Management Unit, the Power Management Unit is second switch unit power supply
And it generates control signal and is input to the second switch unit.Due to enabling first by the second switch unit during shutdown
Metal-oxide-semiconductor M1 cut-off, cuts off powering on to system, and whole system is enabled to be in close to zero power consumption state, reduces system in off-mode
Under power consumption.
Optionally, as shown in figure 3, the first switch unit 11 includes: first resistor R1, the second metal-oxide-semiconductor M2 and third
Metal-oxide-semiconductor M3；
The one end the first resistor R1 is connect with the source electrode of the first metal-oxide-semiconductor M1, the source of the other end and the second metal-oxide-semiconductor M2
Pole connection；The grid of the second metal-oxide-semiconductor M2 is connect with the second switch unit；The drain electrode of the third metal-oxide-semiconductor M3 and institute
The drain electrode connection of the second metal-oxide-semiconductor M2 is stated, the source electrode of the third metal-oxide-semiconductor M3 connects ground, the grid of the third metal-oxide-semiconductor M3 and institute
State the connection of second switch unit.
Optionally, after the grid of the third metal-oxide-semiconductor M3 receives level signal, the third metal-oxide-semiconductor M3 will be produced
Raw level signal is transmitted to the grid of the first metal-oxide-semiconductor M1, the first metal-oxide-semiconductor M1 on or off is driven, thus external
Power supply can give the system electrification or power-off of the on/off circuit by the first metal-oxide-semiconductor M1.
Optionally, as shown in figure 4, the second switch unit 12 includes: second resistance R2,3rd resistor R3, the 4th MOS
Pipe M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 and the 7th metal-oxide-semiconductor M7；
One end of the second resistance R2 is connect with the drain electrode of the 6th metal-oxide-semiconductor M6, the other end and the 4th resistance
Connection；The other end of 4th resistance is connect with the source electrode of the 7th metal-oxide-semiconductor M7；The source electrode of the 6th metal-oxide-semiconductor M6 and
Grid is connect with the Power Management Unit；The grid of the 7th metal-oxide-semiconductor M7 is connect with the Power Management Unit, and described
The drain electrode of seven metal-oxide-semiconductor M7 is connected to ground；
The source electrode and grid of the 4th metal-oxide-semiconductor M4 is connect with the Power Management Unit；The leakage of the 4th metal-oxide-semiconductor M4
Pole is connect with the source electrode of the 5th metal-oxide-semiconductor M5；The grid of the 5th metal-oxide-semiconductor M5 is connect with the Power Management Unit, institute
The drain electrode for stating the 5th metal-oxide-semiconductor M5 is connect with the tie point of the second resistance R2 and 3rd resistor R3.
The second resistance R2 and the 3rd resistor R3 convert the pulse signal after input receives pulse signal
The grid of the third metal-oxide-semiconductor M3, the first metal-oxide-semiconductor M1 conducting, to control the first MOS are transmitted to for voltage signal
Pipe M1 conducting；
After the 4th metal-oxide-semiconductor M4, which receives the control that the Power Management Unit is sent, controls signal EN2, it will place
In on or off state, and the grid that varying level signal is transmitted to the third metal-oxide-semiconductor M3 is generated, driving described first
Metal-oxide-semiconductor M1 on or off, so that the first metal-oxide-semiconductor M1 be driven to be connected.
Wherein, the pulse signal is including but not limited to following several generation forms:
As shown in figure 5, the pulse signal key generates low and high level signal:
Wherein, POWER (power supply) can be external power supply in the present invention in the embodiment of the present invention, or other outer
Portion's power supply, the embodiment of the present invention is it is not limited here.ON pin (i.e. middle arteries of the embodiment of the present invention in the ON connection embodiment of the present invention
It rushes at signal).
When pressing KEY1, ON can generate high level pulse, when high level pulse amplitude and time meet the present invention and implement
Vh and T in exampleHParameter can inspire the course of work that system is in booting, when system is under open state, press KEY1 or
KEY2, it is high level pulse or low level pulse that the signal detector, which may detect that, according to the result notice system of detection
System carries out relevant action.
As shown in fig. 6, the pulse signal generates low and high level signal by power supply toggle switch and RC electrical combination:
Wherein, POWER can be external power supply in the present invention in the embodiment of the present invention, or other external electricals
Source, the embodiment of the present invention it is not limited here, (believe ON pin i.e. in the embodiment of the present invention in the ON connection embodiment of the present invention by pulse
At number).
When pressing SWITCH (switch), the process that is charged due to the presence of resistance R and capacitor C, POWER to capacitor C
ONOFF is upper to generate high level pulse time signal, and the high level amplitude depends on POWER, the charging time depend on resistance R and
The numerical value of capacitor C, when high level pulse amplitude and time meet Vh and T in the embodiment of the present inventionHParameter can inspire at system
The course of work under open state.
As shown in fig. 7, the pulse signal is exported by single-chip microcontroller or timer generates low and high level signal:
Wherein, the high level pulse signal that external microcontroller or timer generate is directly connected to the ON pin in the present invention
On (i.e. in the embodiment of the present invention at pulse signal).Meet Vh and TH in the embodiment of the present invention when high level pulse amplitude and time
Parameter can inspire the course of work that system is in booting.When system is under open state, the signal detector is ok
Detect it is high level pulse or low level pulse, relevant action is carried out according to the result notification system of detection.
Optionally, as shown in figure 8, the Power Management Unit 14 includes: clock generator, power regulator, signal inspection
Survey device, reference voltage circuit and enabled controller；
The power regulator is connect with the source electrode of the 4th metal-oxide-semiconductor M4；The signal detector respectively with it is described
The source electrode connection of reference voltage circuit, the clock generator, the 6th metal-oxide-semiconductor M6；The enabled controller respectively with institute
State signal detector, the 4th metal-oxide-semiconductor M4 is connected with the grid of the 6th metal-oxide-semiconductor M6；
Wherein, the power regulator is used to provide electric energy for the Power Management Unit and the second switch list；Institute
Reference voltage circuit is stated for for the signal detector input reference voltage；The clock generator is used to examine for the signal
It surveys device and clock signal is provided, be used for filtering wave by prolonging time.
Since pulse signal can be generated by external possible various diversified forms, so inevitably there is burr, short arteries and veins
The interference signals such as punching can be these interference signals if providing filtering wave by prolonging time using signal detector described in clock generator
It filters out, error detection is avoided to be in the state of booting so as to cause the switching circuit.
When pulse signal high level duration is less than preset delay time tdelayWhen, the clock generator will not
Pulse signal is filtered, thus the state for avoiding interference signal access that the switching circuit is caused to be in booting.
For example, it is assumed that pulse signal high level lasting time t is 20 seconds, preset delay time tdelayIt is 30 seconds, pulse
The signal high level N duration is less than preset delay time tdelay, clock generator will not be filtered pulse signal.
The enabled controller be used for according to pre-set high level voltage signal threshold value and filtering time threshold value and
The testing result of input generates opening control signal and is input to the second switch unit, makes the second switch unit and institute
The connection of first switch unit is stated, and generate closing control signal after closing control signal input to make the second switch unit
It is disconnected with the first switch unit.
The enabled controller be used for according to pre-set high level voltage signal threshold value and filtering time threshold value and
The testing result of input generates control signal after determination meets compressor start up condition and is input to the second switch unit, makes described
Second switch unit is connect with the first switch unit, for example generates a low level signal；
Pass machine control signal is generated after off signal input and is input to the second switch unit, makes the second switch
Unit is disconnected with the first switch unit, for example generates a high level signal；
Wherein, the enabled controller is specifically used for:
According to pre-set high level voltage signal threshold value and filtering time threshold value and the testing result of input, true
Surely meet and the opening control signal of generation is input to the 4th metal-oxide-semiconductor after compressor start up condition, be in the 4th metal-oxide-semiconductor and lead
Logical state；
Pass machine control signal is generated after off signal input and is input to the 4th metal-oxide-semiconductor, makes the 4th MOS
Pipe is in off state.
The enabled controller also particularly useful for:
After cut-off signals input, generates shutdown control signal and be separately input into second metal-oxide-semiconductor, the described 6th
In metal-oxide-semiconductor and the 7th metal-oxide-semiconductor, so that second metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor are in off state.
Signal is controlled when the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor M7 receive the control that the Power Management Unit is sent
After EN1 will in the state of cut-off, cutting first resistor R1, third metal-oxide-semiconductor M3 and second resistance R2,3rd resistor R3 and
Three non-essential power consumption accesses over the ground that third metal-oxide-semiconductor M3 and 3rd resistor R3 is formed to the signal detector reduce
System boot power consumption.
The on/off circuit is not provided by external circuit also when external power supply accesses the moment of Vsupply for the first time
Or before pressing key pressing generation pulse signal, system is in the state not powered on, and the grid of the first metal-oxide-semiconductor M1 exists larger over the ground
Parasitic capacitance C, cause the grid of the first metal-oxide-semiconductor M1 to be in low level state, and first resistor R1 is the biggish electricity of numerical value
It hinders, the grid of the first metal-oxide-semiconductor M1 can be made by needing the long period just to parasitic capacitance C charging by first resistor R1 at Vsupply
For high level, and the first metal-oxide-semiconductor M1 is easy to be connected in the meantime, to give the system electrification of the on/off circuit.
It wherein, is the source electrode junction of external power supply and the first metal-oxide-semiconductor M1 at the Vsupply.
When first external power supply is supplied and accessed, the first metal-oxide-semiconductor M1 is easy to be connected in order to prevent, to give the switch
The system electrification on electromechanical road.As shown in figure 9, the on/off circuit of the embodiment of the present invention further includes and the first metal-oxide-semiconductor M1
The connected anti-error starting module 15 of grid, is input to for generating by the high level signal of the grid of the first metal-oxide-semiconductor M1.
The anti-error starting module 15 includes: first resistor, first capacitor and the 8th metal-oxide-semiconductor；
One end of the 4th resistance R4 is connect with the source electrode of the first metal-oxide-semiconductor M1, and the other end and the first capacitor C1 connect
It connects；The other end of the first capacitor C1 is connected to ground；The grid of the 8th metal-oxide-semiconductor M8 and first resistor and first capacitor
Tie point connection, the source electrode of the 8th metal-oxide-semiconductor M8 are connect with the source electrode of the first metal-oxide-semiconductor M1, the drain electrode of the 8th metal-oxide-semiconductor M8
It is connect with the grid of the first metal-oxide-semiconductor M1.
The 4th resistance R4 and first capacitor C1 in the anti-error starting module form RC buffer circuit, when first
It is described slow before not provided by external circuit also or generating pulse signal by key pressing when the moment of plant-grid connection Vsupply
It rushes circuit and absorbs electric current, driving the second metal-oxide-semiconductor M2 conducting rapidly, so that the grid of another first metal-oxide-semiconductor M1 is in high level state,
First metal-oxide-semiconductor is in the state of cut-off in the meantime, so that the system electrification of the on/off circuit will not be given.
Wherein, the first metal-oxide-semiconductor M1, the 5th metal-oxide-semiconductor M5, the 4th metal-oxide-semiconductor M4 and the 8th metal-oxide-semiconductor M8
For P-channel metal-oxide-semiconductor；The third metal-oxide-semiconductor M3, the second metal-oxide-semiconductor M2, the 6th metal-oxide-semiconductor M6 and the 7th metal-oxide-semiconductor M7
For N-channel MOS pipe.
As shown in Figure 10, below to including the first metal-oxide-semiconductor M1, first switch unit, second switch unit and power management
The working method of the on/off circuit of unit is described in detail.
1, the booting course of work of the on/off circuit.
When external power supply accesses the on/off circuit by Vsupply, generated by external circuit or external key
The pulse signal Vonoff of one high level, wherein the voltage amplitude of the pulse signal Vonoff of the high level can be less than etc.
Voltage amplitude at Vsupply.
At this point, the grid of the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7 are in low level state, the 6th metal-oxide-semiconductor M6, the 7th
The source electrode of metal-oxide-semiconductor M7 is in the state of high level, meets conduction threshold.The second resistance R2 and the 3rd resistor R3 are defeated
After entering pulse signal, the pulse signal is divided, is converted to the grid that voltage signal is transmitted to the third metal-oxide-semiconductor M3
At Vctl, Vctl=R3/ (R2+R3) * Vonoff, meets the conduction threshold of third metal-oxide-semiconductor M3, the third metal-oxide-semiconductor M3 at this time
The grid that a low level signal is transmitted to the first metal-oxide-semiconductor M1 is connected and will be generated, drives the first metal-oxide-semiconductor M1 conducting rapidly,
At this time external power supply will by Vsupply to the system power supply of the on/off circuit, and generate high level signal transmission
To the source electrode of the second metal-oxide-semiconductor M2, the second metal-oxide-semiconductor M2 conducting.
After the system power supply of the on/off circuit, the power regulator in the Power Management Unit will be opened quickly
It moves as clock generator, signal detector, reference voltage circuit and the power supply of enabled controller in the Power Management Unit.When
Clock generator starts to provide filtering wave by prolonging time for signal deteching circuit, and the reference voltage circuit provides benchmark electricity for detection circuit
Pressure, the signal deteching circuit start to detect pulse signal Vonoff and high level pulse duration T h, the signal detection
Circuit exports the level state at high level pulse the duration T h and Vonoff to the enabled controller.
The enabled controller is the threshold value V of high level according to preset pulse signal VonoffH, time filtering threshold value TF
It is compared with the level state of the pulse signal Vonoff, works as Vonoff >=VH, and when Th-Tr >=TF, met at this time
The compressor start up condition of the on/off circuit then enables controller and generates the grid that low level signal EN1 is transmitted to the 4th metal-oxide-semiconductor M4
Pole, then the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, which will be connected, generates the grid that low level signal is transmitted to third metal-oxide-semiconductor M3
Pole drives the third metal-oxide-semiconductor M3 to be connected, and then the first metal-oxide-semiconductor M1 is made to meet conduction threshold, is on state.
Wherein, the pulse signal Vonoff is the threshold value VH of high level, and the numerical values recited of time filtering threshold value TF can
By those skilled in the art's sets itself according to actual needs.
On/off circuit provided in an embodiment of the present invention because there are two accesses to control the first metal-oxide-semiconductor M1, even if
When level pulse signal Vonoff drops to low level, the controller will generate LOW signal EN2 and be transmitted to the 4th metal-oxide-semiconductor
The grid of M4 makes the 4th metal-oxide-semiconductor M4 conducting driving third metal-oxide-semiconductor M3 conducting, and then the first metal-oxide-semiconductor M1 is made to meet conducting threshold
Value is on state, guarantees that the system comprising the on/off circuit is in the state of continued power.
2, the course of normal operation comprising the on/off circuit system:
Optionally, after making can control described in being input to when cut-off signals device, enabled controller can generate a control simultaneously
Signal EN1 is transmitted to the grid of the second metal-oxide-semiconductor M2, the 6th metal-oxide-semiconductor M6 and the 7th metal-oxide-semiconductor M7, enables the 2nd MOS
Pipe M2, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7 no longer meet conduction threshold, be in off state, thus cut off first resistor R1,
Third metal-oxide-semiconductor M3 and second resistance R2,3rd resistor R3 third metal-oxide-semiconductor M3 and 3rd resistor R3 to the signal detector are formed
Three non-essential power consumption accesses over the ground, reduce power consumption of the system under open state.Wherein, the cut-off signals can be adopted
It is exported with software operation or button operation to the enabled controller.
The signal deteching circuit persistently detects pulse signal Vonoff level state, though not over external key or
The pulse signal that external circuit provides, since the Power Management Unit is in running order, the detecting signal unit can be protected
Card pulse signal Vonoff is in the state of intermediate level, i.e. VL<Vonoff<VH。
Wherein, VLThe minimum threshold that pulse signal Vonoff is high level is detected for signal deteching circuit, wherein VHFor signal
Detection circuit detects the highest threshold value that pulse signal Vonoff is high level.
When detection circuit be continuously detected pulse signal Vonoff high level or the low level time be more than the filter
When the wave time, the memory in the Power Management Unit will generate corresponding flag bit for system according to scheduled instruction
Inquiry enables the system execute corresponding operation.
3, the shutdown course of work comprising the on/off circuit system:
When in the course of work that system is in shutdown, when off signal device be input to it is described make can control after, it is described to make
It can control and generate the grid that a high level signal EN2 is transmitted to the 4th metal-oxide-semiconductor M4, then the 4th metal-oxide-semiconductor M4 will end.
The state of the grid high level of the third metal-oxide-semiconductor M3 at this time, then the third metal-oxide-semiconductor M3 no longer meets conduction threshold, it will
Cut-off, it will generate the grid that a high level signal is transmitted to the first metal-oxide-semiconductor M1, the first metal-oxide-semiconductor M1 is no longer full
Sufficient conduction threshold, it will cut-off, so that external power supply can not be by the first metal-oxide-semiconductor M1 to system power supply.Wherein, the pass
Software operation can be used in machine signal or button operation is exported to the enabled controller.
The on/off circuit is had no progeny completely in entrance, in addition to the first metal-oxide-semiconductor M1, the 5th metal-oxide-semiconductor M5, third metal-oxide-semiconductor M3
There are slight electric leakage, the switch at first resistor R1 and external power supply and the junction Vsupply of the first metal-oxide-semiconductor M1
Other components in electromechanical road are substantially at the state of zero power consumption of power-off, save the shutdown power consumption of circuit.
Above by reference to showing according to the method, apparatus (system) of the embodiment of the present application and/or the frame of computer program product
Figure and/or flow chart describe the application.It should be understood that can realize that block diagram and or flow chart is shown by computer program instructions
The combination of the block of a block and block diagram and or flow chart diagram for figure.These computer program instructions can be supplied to logical
With computer, the processor of special purpose computer and/or other programmable data processing units, to generate machine, so that via meter
The instruction that calculation machine processor and/or other programmable data processing units execute creates for realizing block diagram and or flow chart block
In specified function action method.
Correspondingly, the application can also be implemented with hardware and/or software (including firmware, resident software, microcode etc.).More
Further, the application can take computer usable or the shape of the computer program product on computer readable storage medium
Formula has the computer realized in the medium usable or computer readable program code, to be made by instruction execution system
It is used with or in conjunction with instruction execution system.In the present context, computer can be used or computer-readable medium can be with
It is arbitrary medium, may include, stores, communicates, transmits or transmit program, is made by instruction execution system, device or equipment
With, or instruction execution system, device or equipment is combined to use.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of on/off circuit characterized by comprising the first metal-oxide-semiconductor, first switch unit, second switch unit and electricity
Source control unit；
The source electrode of first metal-oxide-semiconductor is connect with external power supply, and drain electrode is connect with the system comprising the on/off circuit；
The first switch unit respectively with the source electrode of first metal-oxide-semiconductor and grid, the second switch unit and the electricity
The connection of source control unit；
Wherein, after the second switch unit is for the pulse signal outside input, by pulse signal conversion voltage letter
Number, and export to the Power Management Unit；
The Power Management Unit is used for after inputting the voltage signal, and generation opening control signal is input to described second and opens
Unit is closed, connect the second switch unit with the first switch unit；Or after closing control signal input, generate pass
It closes control signal and is input to the second switch unit, disconnect the second switch unit and the first switch unit and connect
It connects；
The first switch unit is used for the Xiang Suoshu first after the second switch unit is connect with the first switch unit
Metal-oxide-semiconductor inputs Continuity signal, keeps first metal-oxide-semiconductor in the conductive state, and in the second switch unit and described the
After one switch unit disconnects, the first metal-oxide-semiconductor of Xiang Suoshu inputs pick-off signal, and first metal-oxide-semiconductor is made to be in off state.
2. the method as described in claim 1, which is characterized in that the first switch unit includes: first resistor, the 2nd MOS
Pipe and third metal-oxide-semiconductor；
Described first resistor one end is connect with the source electrode of the first metal-oxide-semiconductor, and the other end is connect with the source electrode of the second metal-oxide-semiconductor；Described
The grid of two metal-oxide-semiconductors is connect with the second switch unit；
The drain electrode of the third metal-oxide-semiconductor is connect with the drain electrode of second metal-oxide-semiconductor, and the source electrode of the third metal-oxide-semiconductor connects ground, institute
The grid for stating third metal-oxide-semiconductor is connect with the second switch unit.
3. method according to claim 2, which is characterized in that the second switch unit includes: second resistance, third electricity
Resistance, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor；
One end of the second resistance is connect with the drain electrode of the 6th metal-oxide-semiconductor, and the other end is connect with the 3rd resistor；It is described
The other end of 3rd resistor is connect with the source electrode of the 7th metal-oxide-semiconductor；The source electrode and grid and the power supply of 6th metal-oxide-semiconductor
Administrative unit connection；The grid of 7th metal-oxide-semiconductor is connect with the Power Management Unit, the drain electrode of the 7th metal-oxide-semiconductor with
Ground connection；
The source electrode and grid of 4th metal-oxide-semiconductor are connect with the Power Management Unit；The drain electrode of 4th metal-oxide-semiconductor with it is described
The source electrode of 5th metal-oxide-semiconductor connects；The grid of second metal-oxide-semiconductor is connect with the Power Management Unit, second metal-oxide-semiconductor
Drain electrode is connect with the tie point of the second resistance and 3rd resistor.
4. on/off circuit as claimed in claim 3, which is characterized in that the Power Management Unit include: clock generator,
Power regulator, signal detector, reference voltage circuit and enabled controller；
The power regulator is used to provide electric energy for the Power Management Unit and the second switch list；
The reference voltage circuit is used to be the signal detector input reference voltage；
The clock generator is used to provide clock signal for the signal detector, is used for filtering wave by prolonging time；
The signal detector is used for after input reference voltage, and voltage signal and the pulse for detecting the pulse signal conversion are high
Level duration, and the testing result is exported to the enabled controller；
The enabled controller is used for according to pre-set high level voltage signal threshold value, filtering time threshold value and input
Testing result generates opening control signal after compressor start up condition and is input to the second switch unit determining to meet, and makes described the
Two switch units are connect with the first switch unit；Or generated after off signal input close machine control signal be input to it is described
Second switch unit disconnects the second switch unit with the first switch unit.
5. on/off circuit as claimed in claim 4, which is characterized in that the power regulator and the 4th metal-oxide-semiconductor
Source electrode connection；The signal detector respectively with the reference voltage circuit, the clock generator, the 6th metal-oxide-semiconductor
Source electrode connection；The enabled controller grid with the signal detector, the 4th metal-oxide-semiconductor and the 6th MOS respectively
Connection；
The enabled controller is specifically used for:
It is full determining according to pre-set high level voltage signal threshold value and filtering time threshold value and the testing result of input
Opening control signal is generated after sufficient compressor start up condition and is input to the 4th metal-oxide-semiconductor, keeps the 4th metal-oxide-semiconductor in the conductive state；
Or
Pass machine control signal is generated after off signal input and is input to the 4th metal-oxide-semiconductor, is made at the 4th metal-oxide-semiconductor
In off state.
6. on/off circuit as described in claim 4 or 5, which is characterized in that the enabled controller is also used to:
After cut-off signals input, generates shutdown control signal and be separately input into second metal-oxide-semiconductor, the 6th metal-oxide-semiconductor
In the 7th metal-oxide-semiconductor, so that second metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor are in off state.
7. on/off circuit as described in claim 1, which is characterized in that the on/off circuit further includes and described first
The connected anti-error starting module of the grid of metal-oxide-semiconductor believes the high level of the grid of first metal-oxide-semiconductor for generating to be input to
Number.
8. on/off circuit as claimed in claim 7, which is characterized in that the anti-error starting module includes: the 4th resistance, the
One capacitor and the 8th metal-oxide-semiconductor；
One end of 4th resistance is connect with the source electrode of the first metal-oxide-semiconductor, and the other end is connect with the first capacitor；Described first
The other end of capacitor is connected to ground；
The grid of 8th metal-oxide-semiconductor is connect with the tie point of the 4th resistance and first capacitor, the source electrode of the 8th metal-oxide-semiconductor with
The source electrode of first metal-oxide-semiconductor connects, and the drain electrode of the 8th metal-oxide-semiconductor is connect with the grid of the 8th metal-oxide-semiconductor.
9. the on/off circuit as described in claim 1~8, which is characterized in that first metal-oxide-semiconductor, the 5th metal-oxide-semiconductor,
4th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor are P-channel metal-oxide-semiconductor；
The third metal-oxide-semiconductor, second metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor are N-channel MOS pipe.
10. a kind of electronic equipment, which is characterized in that the electronic equipment includes that the switch as described in claim 1~9 is any is electromechanical
Road.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711370858.7A CN109936354B (en) | 2017-12-19 | 2017-12-19 | Startup and shutdown circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711370858.7A CN109936354B (en) | 2017-12-19 | 2017-12-19 | Startup and shutdown circuit |
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| CN109936354B CN109936354B (en) | 2023-03-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113225064A (en) * | 2020-01-21 | 2021-08-06 | 炬芯科技股份有限公司 | Pin control circuit and integrated chip |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11317657A (en) * | 1998-05-06 | 1999-11-16 | Toshiba Corp | Transmission gate circuit |
| US20020135235A1 (en) * | 2001-03-22 | 2002-09-26 | Winick Bradley D. | Active circuit protection for switched power supply system |
| DE10333111A1 (en) * | 2003-01-08 | 2004-07-29 | Mitsubishi Denki K.K. | Drive circuit for a semiconductor switching device |
| CN103676746A (en) * | 2013-12-20 | 2014-03-26 | 青岛歌尔声学科技有限公司 | Control circuit of startup and shutdown machine and electronic equipment |
| CN103809492A (en) * | 2014-02-25 | 2014-05-21 | 青岛歌尔声学科技有限公司 | One-key type multifunctional control circuit and wearable electronic product |
| CN203616604U (en) * | 2013-12-20 | 2014-05-28 | 青岛歌尔声学科技有限公司 | A startup and shutdown control circuit and an electronic device |
| CN203705875U (en) * | 2014-02-25 | 2014-07-09 | 青岛歌尔声学科技有限公司 | One-button multifunctional control circuit and wearable electronic product |
| CN106134083A (en) * | 2016-03-15 | 2016-11-16 | 深圳市锐明技术股份有限公司 | A kind of boot-strap circuit of vehicle-mounted security-monitoring equipment |
| US20160364595A1 (en) * | 2014-12-30 | 2016-12-15 | Shenzhen Huiding Technology Co., Ltd. | Fingerprint recogntion sensor and terminal device |
| CN106292341A (en) * | 2015-05-14 | 2017-01-04 | 深圳市三诺数字科技有限公司 | A kind of power on/off system and method |
-
2017
- 2017-12-19 CN CN201711370858.7A patent/CN109936354B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11317657A (en) * | 1998-05-06 | 1999-11-16 | Toshiba Corp | Transmission gate circuit |
| US20020135235A1 (en) * | 2001-03-22 | 2002-09-26 | Winick Bradley D. | Active circuit protection for switched power supply system |
| DE10333111A1 (en) * | 2003-01-08 | 2004-07-29 | Mitsubishi Denki K.K. | Drive circuit for a semiconductor switching device |
| CN103676746A (en) * | 2013-12-20 | 2014-03-26 | 青岛歌尔声学科技有限公司 | Control circuit of startup and shutdown machine and electronic equipment |
| CN203616604U (en) * | 2013-12-20 | 2014-05-28 | 青岛歌尔声学科技有限公司 | A startup and shutdown control circuit and an electronic device |
| CN103809492A (en) * | 2014-02-25 | 2014-05-21 | 青岛歌尔声学科技有限公司 | One-key type multifunctional control circuit and wearable electronic product |
| CN203705875U (en) * | 2014-02-25 | 2014-07-09 | 青岛歌尔声学科技有限公司 | One-button multifunctional control circuit and wearable electronic product |
| US20160364595A1 (en) * | 2014-12-30 | 2016-12-15 | Shenzhen Huiding Technology Co., Ltd. | Fingerprint recogntion sensor and terminal device |
| CN106292341A (en) * | 2015-05-14 | 2017-01-04 | 深圳市三诺数字科技有限公司 | A kind of power on/off system and method |
| CN106134083A (en) * | 2016-03-15 | 2016-11-16 | 深圳市锐明技术股份有限公司 | A kind of boot-strap circuit of vehicle-mounted security-monitoring equipment |
Non-Patent Citations (4)
| Title |
|---|
| 李晓琳: "智能健康手表的设计与实现", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
| 杜文杰: "具有自适应开机和冬眠功能的电源管理设计", 《现代电子技术》 * |
| 郑健: "通信后备锂电池管理系统的设计与实现", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
| 靖玲: "高通MSM8916处理器的智能手机硬件设计与实现", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113225064A (en) * | 2020-01-21 | 2021-08-06 | 炬芯科技股份有限公司 | Pin control circuit and integrated chip |
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| CN109936354B (en) | 2023-03-28 |
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