CN109930154A - Etching liquid, etch combinations liquid and lithographic method - Google Patents
Etching liquid, etch combinations liquid and lithographic method Download PDFInfo
- Publication number
- CN109930154A CN109930154A CN201910342868.2A CN201910342868A CN109930154A CN 109930154 A CN109930154 A CN 109930154A CN 201910342868 A CN201910342868 A CN 201910342868A CN 109930154 A CN109930154 A CN 109930154A
- Authority
- CN
- China
- Prior art keywords
- etching liquid
- etching
- mass percent
- liquid
- percent range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The present invention provides a kind of etching liquid, etch combinations liquid and lithographic method.Etching liquid includes hydrogen peroxide, the first buffer, the first chelating agent, regulator, alcohols material, the first inhibitor and deionized water.Etch combinations liquid includes above-mentioned etching liquid and bulking liquor, and wherein bulking liquor includes lytic agent, the second buffer, the second chelating agent and the second inhibitor.Etching liquid does not include fluorine in the program, avoids the corrosion to substrate, improves the yields of display panel.
Description
Technical field
The present invention relates to lithographic technique fields, more particularly to a kind of etching liquid, etch combinations liquid and lithographic method.
Background technique
With popularizing for intelligent mobile terminal, display panel technology is used widely, and is developed more and more rapider.
It in display panel processing procedure, generallys use copper metal and the cablings such as gate lines, data lines is made, to transmit various letters
Number, realize the display function of display panel.Specifically, Copper thin film can be coated on substrate, pattern then is carried out to Copper thin film
Change, forms various metal wires.
Wherein, the copper of redundance needs to perform etching using etching liquid, however existing etching liquid typically contains fluorine, right
Glass material in substrate has corrosiveness, and the yields of display panel is caused to reduce.
Summary of the invention
The purpose of the present invention is to provide a kind of etching liquid, etch combinations liquid and lithographic methods, and display panel can be improved
Yields.
The embodiment of the invention provides a kind of etching liquids comprising: hydrogen peroxide, the first chelating agent, is adjusted the first buffer
Agent, alcohols material, the first inhibitor and deionized water.
In one embodiment, mass percent range of the hydrogen peroxide in the etching liquid is 15%-25%；It is described
Mass percent range of first buffer in the etching liquid is 15%-20%；First chelating agent is in the etching
Mass percent range in liquid is 1%-10%；Mass percent range of the regulator in the etching liquid is 1%-
15%；Mass percent range of the alcohols material in the etching liquid is 0.1%-5%；First inhibitor is in institute
Stating the mass percent range in etching liquid is 0.01%-1%；Mass percent of the deionized water in the etching liquid
Range is 24%-67.89%.
In one embodiment, first buffer include ammonium acetate-hydrochloric acid-ammonia solution, acetic acid-ethyl alcohol-ammonium hydroxide,
One of glacial acetic acid-ammonium hydroxide buffer and fructus lycii acid-ethyl alcohol-ammonium hydroxide buffer are a variety of.
In one embodiment, first chelating agent includes one in chitosan, 8-hydroxyquinoline and potassium ammonium tartrate
Kind is a variety of.
In one embodiment, the regulator include -2 methyl-1s of 2- amino-propyl alcohol, di-n-butylamine, diethylamine, aniline with
And one of diphenylamines or a variety of.
In one embodiment, the alcohols material includes in polyethylene glycol, polystyrene glycol, ethyl alcohol and propylene glycol
It is one or more.
In one embodiment, first inhibitor includes 3- amino-1,2,4-triazole, 6- nitrobenzimidazole and 2-
One of aminothiazole is a variety of.
The embodiment of the invention also provides a kind of etch combinations liquid, including etching liquid as described above and bulking liquor；
The bulking liquor includes lytic agent, the second buffer, the second chelating agent and the second inhibitor.
In one embodiment, the mass percent range of the relatively described etching liquid of second buffer is 0.1-15%；
The mass percent range of the relatively described etching liquid of second chelating agent is 0.01%-3%；The lytic agent relatively described quarter
The mass percent range for losing liquid is 1%-15%；The mass percent range of the relatively described etching liquid of second inhibitor is
0.001%-0.1%.
The embodiment of the invention also provides a kind of lithographic methods, are performed etching using etch combinations liquid as described above,
Include:
One substrate is provided；
The substrate is performed etching by the etching liquid；
Detect the concentration of copper ion in the etching liquid；
When the concentration of the copper ion is in preset concentration range, the etching liquid is added in the bulking liquor, is continued
The substrate is performed etching.
Etching liquid in the etching liquid of the embodiment of the present invention, etch combinations liquid and lithographic method is not fluorine-containing, avoids fluorine
Corrosion to substrate improves the yields of display panel.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate institute's accompanying drawings, makees
Detailed description are as follows:
Detailed description of the invention
Fig. 1 is the flow diagram of lithographic method provided in an embodiment of the present invention.
Fig. 2 is the schematic diagram of a scenario of lithographic method provided in an embodiment of the present invention.
Specific embodiment
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.
The similar unit of structure is to be given the same reference numerals in the figure.
Referenced herein " embodiment " is it is meant that a particular feature, structure, or characteristic described can wrap in conjunction with the embodiments
Containing at least one embodiment of the present invention.Each position in the description occur the phrase might not each mean it is identical
Embodiment, nor the independent or alternative embodiment with other embodiments mutual exclusion.Those skilled in the art explicitly and
Implicitly understand, embodiment described herein can be combined with other embodiments.
The embodiment of the invention provides a kind of etch combinations liquid, which includes etching liquid and bulking liquor.Wherein,
Etching liquid wherein has copper Cu film and molybdenum Mo film, molybdenum film is used for performing etching to the substrate in display panel on substrate
Sticking nature between increase Copper thin film and substrate body.As etching process promotes, when copper ion concentration is greater than in etching liquid
When preset concentration, bulking liquor can be added, extend the service life of the etching liquid.
As shown in table 1 below, the constituent of etching liquid include hydrogen peroxide, the first buffer, the first chelating agent, regulator,
Alcohols material, the first inhibitor and deionized water.
Table 1
| The constituent of etching liquid | Mass percent range |
| Hydrogen peroxide | 15%-25% |
| First buffer | 15%-20% |
| First chelating agent | 1%-10% |
| Regulator | 1%-15% |
| Alcohols material | 0.1%-5% |
| First inhibitor | 0.01%-1% |
| Deionized water | 24%-67.89% |
Molybdenum in substrate can be oxidized to molybdenum trioxide MoO3 by hydrogen peroxide, and copper is oxidized to copper oxide CuO.As shown in table 1,
Hydrogen peroxide is in the mass percent range in etching liquid between 15%-25%.
Deionized water can not only be decomposed to avoid hydrogen peroxide, can also avoid introducing the dry of metal ion in etching liquid
It disturbs.As shown in table 1, mass percent range of the deionized water in the etching liquid is 24%-67.89%.
First buffer includes ammonium acetate-hydrochloric acid-ammonia solution, acetic acid-ethyl alcohol-ammonium hydroxide, glacial acetic acid-ammonium hydroxide buffer
And one of fructus lycii acid-ethyl alcohol-ammonium hydroxide buffer or a variety of.Inorganic acid and weak base salt are combined in first buffer.Its
Middle inorganic acid can be reacted with copper oxide, molybdenum trioxide, obtain copper ion, molybdenum ion.The pH of the adjustable etching liquid of weak base salt
(Hydrogen ion concentration, hydrogen ionexponent) value, molybdenum caused by pH value can be prevented excessively high are etched
Fastly.As shown in table 1, mass percent range of first buffer in the etching liquid is 15%-20%.
First chelating agent is used for complex copper ion and molybdenum ion.First chelating agent may include chitosan, 8-hydroxyquinoline
And one of potassium ammonium tartrate or a variety of.Mass percent range of first chelating agent in the etching liquid be
1%-10%.
Regulator can make the etching of copper and molybdenum generate speed difference, and the etching speed of copper is made to be greater than the etching speed of molybdenum.Its
In, regulator includes one of -2 methyl-1s of 2- amino-propyl alcohol, di-n-butylamine, diethylamine, aniline and diphenylamines or more
Kind.As shown in table 1, mass percent range of the regulator in the etching liquid is 1%-15%.
Alcohols material can be such that the organic matters such as above-mentioned inorganic acid, regulator or inorganic matter dissolve.Wherein, the alcohols material
Including one of polyethylene glycol, polystyrene glycol, ethyl alcohol and propylene glycol or a variety of.As shown in table 1, the alcohols material
Mass percent range in the etching liquid is 0.1%-5%.
First inhibitor can reduce the chemical reaction velocity of etching liquid.First inhibitor includes amino -1,2 3-,
One of 4- triazole, 6- nitrobenzimidazole and thiazolamine are a variety of.As shown in table 1, first inhibitor exists
Mass percent range in the etching liquid is 0.01%-1%.
As shown in table 2 below, the constituent of bulking liquor includes the second buffer, the second chelating agent, alcohols material and the
Two inhibitor.Bulking liquor can make the section gradient of metallic film, CD loss (the wide loss of item) and molybdenum residual quantity not with copper
The concentration of ion increases and changes.Even if in etching liquid the concentration of copper ion reach 15000ppm (parts per million,
Parts per million concentration), etching liquid bumping will not be made.To sum up, bulking liquor can have good etching performance with auxiliary etch liquid,
Extend the service life of etching liquid.
Table 2
| The constituent of bulking liquor | The mass percent range of opposite etching liquid |
| Second buffer | 0.1%-5% |
| Second chelating agent | 0.01%-3% |
| Lytic agent | 1%-15% |
| Second inhibitor | 0.001%-0.1% |
Propulsion with etching liquid to the etching process of substrate, the pH value in etching liquid increase.Second in bulking liquor is slow
Fliud flushing can maintain the pH value in etching liquid in default pH range.Second buffer includes that ammonium acetate-hydrochloric acid-ammonia is molten
One of liquid, acetic acid-ethyl alcohol-ammonium hydroxide, glacial acetic acid-ammonium hydroxide buffer and fructus lycii acid-ethyl alcohol-ammonium hydroxide buffer are more
Kind.As shown in table 2, the mass percent range of the relatively described etching liquid of the second buffer is 0.1%-5%.
Propulsion with etching liquid to the etching process of substrate, the copper ion in etching liquid increase, and copper ion can decompose double
Oxygen water.The second chelating agent in bulking liquor can keep the stability of etching liquid with complex copper ion.Wherein, the second chelating agent packet
Include one of chitosan, 8-hydroxyquinoline and potassium ammonium tartrate or a variety of.As shown in table 2, the second chelating agent is relatively described
The mass percent range of etching liquid is 0.01%-3%.
Further, in order to avoid copper ion concentration increase leads to the reduction of metallic diaphragm cone angle, addition second can be passed through
Inhibitor maintains the stabilization of cone angle.Second inhibitor includes 3- amino -1,2,4- triazole, 6- nitrobenzimidazole and 2- ammonia
One of base thiazole is a variety of.As shown in table 2, the mass percent range of the relatively described etching liquid of second inhibitor is
0.001%-0.1%.
Lytic agent is for dissolving inorganic matters or the organic matters such as above-mentioned second chelating agent, the second inhibitor.Lytic agent includes poly-
One of ethylene glycol, polystyrene glycol, ethyl alcohol and propylene glycol are a variety of.As shown in table 2, the lytic agent is relatively described
The mass percent range of etching liquid is 1%-15%.
The embodiment of the invention also provides a kind of lithographic methods, carve by using above-mentioned etch combinations liquid to substrate
Erosion.Referring to figure 2., Fig. 2 is the flow chart of lithographic method provided in an embodiment of the present invention, which includes the following steps:
Step S101 provides a substrate.
Wherein, there are copper Cu film and molybdenum Mo film on substrate.Wherein, molybdenum film setting substrate body and Copper thin film it
Between, to increase the adhesion between copper and substrate body.By patterning to Copper thin film, gate lines, data lines etc. can be formed
Metal wiring.For extra copper or molybdenum, can be performed etching using the etching liquid of the present embodiment.
Step S102 performs etching substrate by etching liquid.
In one embodiment, etching liquid can be etching liquid A shown in table 3.As shown in table 3 below, the composition of etching liquid A
Ingredient includes hydrogen peroxide, ammonium acetate-hydrochloric acid-ammonia solution, chitosan, -2 methyl-1s of 2- amino-propyl alcohol, polyethylene glycol, 3- amino -
1,2,4- triazole and deionized water.Mass percent of the above-mentioned constituent in etching liquid A be followed successively by 17%, 20%,
3%, 4.5%, 0.5%, 0.05% and 54.95%.Ammonium acetate-hydrochloric acid-ammonia solution pH value is 3.5.
Table 3
Wherein, the molybdenum in substrate can be oxidized to molybdenum trioxide MoO3 by hydrogen peroxide, and copper is oxidized to copper oxide CuO.Go from
Sub- water can not only be decomposed to avoid hydrogen peroxide, can also avoid the interference that metal ion is introduced in etching liquid.Ammonium acetate-salt
Acid-ammonia solution can both be reacted with copper oxide, molybdenum trioxide, obtain copper ion, molybdenum ion, and the pH of adjustable etching liquid
Value, the etching of molybdenum caused by pH value can be prevented excessively high are too fast.Chitosan can be with complex copper ion and molybdenum ion.- 2 first of 2- amino
Base -1- propyl alcohol can make the etching of copper and molybdenum generate speed difference, and the etching speed of copper is made to be greater than the etching speed of molybdenum.Polyethylene glycol
The organic matters such as above-mentioned ammonium acetate-hydrochloric acid-ammonia solution, chitosan or inorganic matter can be made to dissolve.3- amino -1,2,4- triazole can be with
Reduce the chemical reaction velocity of etching liquid.
In one embodiment, the etching temperature of etching liquid can be controlled between 30 degrees Celsius to 35 degrees Celsius, with control
Etching speed processed.
Step S103, the concentration of copper ion in detection etch liquid.
As etching process promotes, the concentration of copper ion increases in etching liquid.Excessive copper ion can not only decompose dioxygen
Water also results in the reduction of metallic diaphragm cone angle, it is therefore desirable to detect to the concentration of copper ion in etching liquid.
Bulking liquor is added etching liquid, continued to base by step S104 when the concentration of copper ion is in preset concentration range
Plate performs etching.
Do not include copper ion in etching liquid before etching, a preset concentration range can be set, when the concentration of copper ion
When range is in default copper ion concentration scope, such as 1000ppm or so, illustrate the etching performance decline of etching liquid.In this reality
It applies in example, can improve the etching performance of etching liquid by supplementing bulking liquor, that is, extend the etching service life of etching liquid.
In one embodiment, bulking liquor can be bulking liquor B as shown in table 4.As shown in table 3 below, the group of bulking liquor
It include: chitosan, ammonium acetate-hydrochloric acid-ammonia solution, polyethylene glycol and 3- amino -1,2,4- triazole at ingredient.Above-mentioned composition at
Split-phase is followed successively by 0.3%, 0.5%, 8% and 0.005% to the mass percent in etching liquid A.
Table 4
| The constituent of bulking liquor B | The mass percent of opposite etching liquid A |
| Chitosan | 0.3% |
| Ammonium acetate-hydrochloric acid-ammonia solution | 0.5% |
| Polyethylene glycol | 8% |
| 3- amino -1,2,4- triazole | 0.005% |
Wherein, chitosan can keep the stability of etching liquid with complex copper ion.Ammonium acetate-hydrochloric acid-ammonia solution can be tieed up
The pH value in etching liquid is held in default pH range.3- amino -1,2,4- triazole can maintain the stabilization of cone angle.Polyethylene glycol
The inorganic matters such as above-mentioned chitosan or organic matter can be dissolved.
As shown in Figure 1, the section gradient of copper 101 can reach in substrate 100 after the etched combination liquid of substrate 100 etching
To 53.2 degree, i.e., taper angle theta can achieve 53.2 degree, and CD loss (the wide loss of item) L is 0.85 micron.And do not have on substrate 100
Molybdenum residual.
Etching liquid in the etching liquid of the embodiment of the present invention, etch combinations liquid and lithographic method is not fluorine-containing, can be to avoid
Corrosion to substrate improves the yields of display panel.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of etching liquid characterized by comprising hydrogen peroxide, the first buffer, the first chelating agent, regulator, alcohols object
Matter, the first inhibitor and deionized water.
2. etching liquid according to claim 1, which is characterized in that
Mass percent range of the hydrogen peroxide in the etching liquid is 15%-25%；
Mass percent range of first buffer in the etching liquid is 15%-20%；
Mass percent range of first chelating agent in the etching liquid is 1%-10%；
Mass percent range of the regulator in the etching liquid is 1%-15%；
Mass percent range of the alcohols material in the etching liquid is 0.1%-5%；
Mass percent range of first inhibitor in the etching liquid is 0.01%-1%；
Mass percent range of the deionized water in the etching liquid is 24%-67.89%.
3. etching liquid according to claim 1, which is characterized in that first buffer includes that ammonium acetate-hydrochloric acid-ammonia is molten
One of liquid, acetic acid-ethyl alcohol-ammonium hydroxide, glacial acetic acid-ammonium hydroxide buffer and fructus lycii acid-ethyl alcohol-ammonium hydroxide buffer are more
Kind.
4. etching liquid according to claim 1, which is characterized in that first chelating agent includes chitosan, 8- hydroxyl quinoline
One of quinoline and potassium ammonium tartrate are a variety of.
5. etching liquid according to claim 1, which is characterized in that the regulator include -2 methyl-1s of 2- amino-propyl alcohol,
One of di-n-butylamine, diethylamine, aniline and diphenylamines are a variety of.
6. etching liquid according to claim 1, which is characterized in that the alcohols material includes polyethylene glycol, polystyrene
One of glycol, ethyl alcohol and propylene glycol are a variety of.
7. etching liquid according to claim 1, which is characterized in that first inhibitor includes 3- amino -1,2,4- tri-
One of azoles, 6- nitrobenzimidazole and thiazolamine are a variety of.
8. a kind of etch combinations liquid, including the etching liquid and bulking liquor as described in claim 1-7 any one；
The bulking liquor includes lytic agent, the second buffer, the second chelating agent and the second inhibitor.
9. etch combinations liquid according to claim 8, which is characterized in that
The mass percent range of the relatively described etching liquid of second buffer is 0.1-15%；
The mass percent range of the relatively described etching liquid of second chelating agent is 0.01%-3%；
The mass percent range of the relatively described etching liquid of the lytic agent is 1%-15%；
The mass percent range of the relatively described etching liquid of second inhibitor is 0.001%-0.1%.
10. a kind of lithographic method is performed etching using etch combinations liquid as claimed in claim 8 or 9, which is characterized in that packet
It includes:
One substrate is provided；
The substrate is performed etching by the etching liquid；
Detect the concentration of copper ion in the etching liquid；
When the concentration of the copper ion is in preset concentration range, the etching liquid is added in the bulking liquor, is continued to institute
Substrate is stated to perform etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910342868.2A CN109930154A (en) | 2019-04-24 | 2019-04-24 | Etching liquid, etch combinations liquid and lithographic method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910342868.2A CN109930154A (en) | 2019-04-24 | 2019-04-24 | Etching liquid, etch combinations liquid and lithographic method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109930154A true CN109930154A (en) | 2019-06-25 |
Family
ID=66991042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910342868.2A Pending CN109930154A (en) | 2019-04-24 | 2019-04-24 | Etching liquid, etch combinations liquid and lithographic method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109930154A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110230059A (en) * | 2019-07-01 | 2019-09-13 | 深圳市华星光电技术有限公司 | The metal pattern production method of display panel |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102762770A (en) * | 2010-02-15 | 2012-10-31 | 三菱瓦斯化学株式会社 | Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
| CN107858685A (en) * | 2017-11-15 | 2018-03-30 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
| CN109023370A (en) * | 2018-08-30 | 2018-12-18 | 深圳市华星光电技术有限公司 | Etching solution and engraving method for copper-molybdenum metallic diaphragm |
| CN109023372A (en) * | 2018-08-31 | 2018-12-18 | 深圳市华星光电技术有限公司 | Copper/molybdenum film layer etchant |
| CN109234736A (en) * | 2018-08-31 | 2019-01-18 | 深圳市华星光电技术有限公司 | A kind of high life copper-molybdenum etching solution and engraving method |
-
2019
- 2019-04-24 CN CN201910342868.2A patent/CN109930154A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102762770A (en) * | 2010-02-15 | 2012-10-31 | 三菱瓦斯化学株式会社 | Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
| CN107858685A (en) * | 2017-11-15 | 2018-03-30 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
| CN109023370A (en) * | 2018-08-30 | 2018-12-18 | 深圳市华星光电技术有限公司 | Etching solution and engraving method for copper-molybdenum metallic diaphragm |
| CN109023372A (en) * | 2018-08-31 | 2018-12-18 | 深圳市华星光电技术有限公司 | Copper/molybdenum film layer etchant |
| CN109234736A (en) * | 2018-08-31 | 2019-01-18 | 深圳市华星光电技术有限公司 | A kind of high life copper-molybdenum etching solution and engraving method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110230059A (en) * | 2019-07-01 | 2019-09-13 | 深圳市华星光电技术有限公司 | The metal pattern production method of display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105887089B (en) | Etching liquid composition and etching method using the same | |
| CN109234736B (en) | Long-life copper-molybdenum etching solution and etching method | |
| CN101684557A (en) | Copper, copper/molybdenum, or copper/molybdenum alloy electrode etching solution for use in liquid crystal display system | |
| WO2021159577A1 (en) | Etching solution, additive, and manufacturing method for metal wiring | |
| US20110256712A1 (en) | Etchant for electrode and method of fabricating thin film transistor array panel using the same | |
| CN104838040B (en) | Metal film etchant and the engraving method that make use of said composition | |
| CN110079803A (en) | Etching liquid, etch combinations liquid and lithographic method | |
| CN109266352B (en) | Etching solution composition of silver-containing composite film and etching method | |
| KR20110123025A (en) | Etchant for metal wire and method for manufacturing metal wire using the same | |
| CN109930154A (en) | Etching liquid, etch combinations liquid and lithographic method | |
| KR102400343B1 (en) | Metal film etchant composition and manufacturing method of an array substrate for display device | |
| KR102419970B1 (en) | Composision for etching, method for etching and electronic device | |
| KR20060094487A (en) | Etchant compositions for metal laminated films having titanium and aluminum layer | |
| KR102205628B1 (en) | Etchant composition for copper or copper-containing metal films | |
| KR100364831B1 (en) | Etching solution for Molybdenum metal layer | |
| JPS6050182A (en) | Dissolution of metals with glycol ether | |
| US20220349064A1 (en) | Etchant and etching method for copper-molybdenum film layer | |
| CN113774382A (en) | CuNi-Al-Mo etching solution | |
| CN110230059B (en) | Method for manufacturing metal pattern of display panel | |
| CN106555187B (en) | Etchant composition, method for etching copper-based metal layer, method for manufacturing array substrate and array substrate manufactured by same | |
| CN1971351A (en) | Etching composition for ito | |
| KR101026983B1 (en) | Etching composition for tft lcd | |
| WO2018154775A1 (en) | Etching liquid and use of same | |
| CN109594079B (en) | Molybdenum-aluminum common etching solution and etching method | |
| KR20160001239A (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190625 |