CN109922270A - Phase focus image sensor chip - Google Patents
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- CN109922270A CN109922270A CN201910307907.5A CN201910307907A CN109922270A CN 109922270 A CN109922270 A CN 109922270A CN 201910307907 A CN201910307907 A CN 201910307907A CN 109922270 A CN109922270 A CN 109922270A
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Abstract
The invention is related to a kind of phase focus image sensor chip, wherein the phase focus image sensor includes: the pixel unit array being made of multiple pixel units, it is arranged to phase focusing sensor chip surface, and the pixel unit is the pixel unit with phase-detection automatic focusing function, comprising: the array of sub-pixels being made of multiple sub-pixels；The sub-pixel includes: imaging photosensitive element；Optical filter, covering are set to the upper surface of the imaging photosensitive element；The optical filter of at least two sub-pixels is yellow filter；The arrangement position that the sub-pixel of yellow filter is arranged at least two pixel units is different.Phase focus image sensor chip of the invention can increase the susceptibility of phase-detection auto-focusing.
Description
Technical field
The present invention relates to the focusing fields of imaging sensor, and in particular to a kind of phase focus image sensor chip.
Background technique
With the increasing popularization of smart mobile phone, people also proposed increasingly the image taking effect of mobile intelligent terminal
High requirement can be realized rapid focus in some dynamic scenes, and clearly some written in water shadows under candid photograph
Picture becomes more and more Man's Demands.Meanwhile changeable scene is coped with, for high dynamic range, the requirement of high sensitivity is also more next
It is higher.
Focusing technology more advanced at present is phase-detection auto-focusing (PDAF) technology, be may be implemented more quickly
Focusing.Phase-detection auto-focusing is realized at present, and the phase in the signal message being mainly collected into using different subpixel is believed
Breath.Specifically, phase information is extracted by algorithm, with the variation of object and the position of focal plane, phase information
Variation can be generated, the defocus extracted for designed structure can fit a curve to the phase information of focus,
When actual scene goes to the position of detection defocus object, the mobile position that how much can reach focus cracking can be calculated
It sets, and then realizes rapid focus.
At present when realizing phase-detection auto-focusing on cmos sensor, under dim light, phase-detection auto-focusing function
It can become very slow or failure.Under strong light, and it is easy to appear overexposure, influences final imaging.It is integrated in use numerous
When the chip of the cmos sensor with phase-detection automatic focusing function, it has also been discovered that this chip is easy hair under dim light
The case where raw phase-detection automatic focusing function is slack-off or fails.
Summary of the invention
The purpose of the present invention is to provide a kind of phase focus image sensor chips, and it is automatically right can to increase phase-detection
Burnt susceptibility.
In order to solve the above-mentioned technical problems, the present invention provides a kind of phase focus image sensor chips, comprising: by more
The pixel unit array that a pixel unit is constituted, setting is to phase focusing sensor chip surface, and the pixel unit is tool
There is the pixel unit of phase-detection automatic focusing function, comprising: the array of sub-pixels being made of multiple sub-pixels；The sub-pixel
It include: imaging photosensitive element；Optical filter, covering are set to the upper surface of the imaging photosensitive element；At least two sub-pixels
Optical filter is yellow filter；The arrangement position that the sub-pixel of yellow filter is arranged at least two pixel units is different.
Optionally, further includes: the second lenticule, covering are set to the upper surface of the pixel unit；The sub-pixel is also
It include: the first lenticule, covering is set to the upper surface of the optical filter.
Optionally, the sub-pixel further include: anti-dazzling screen is set between the optical filter and imaging photosensitive element, ruler
The half of the very little size for the optical filter；At least two sub-pixels are provided with the anti-dazzling screen in one pixel unit.
Optionally, back side optical filter isolation structure is provided between the optical filter of each sub-pixel.
Optionally, it is provided with dielectric layer between the optical filter and imaging photosensitive element, for increasing the transmitance of light.
Optionally, deep trench isolation structure is provided between the imaging photosensitive element of each sub-pixel.
Optionally, the pixel unit includes four sub-pixels, and the array of sub-pixels is 2 × 2 arrays.
Optionally, in the array of sub-pixels, the number that the sub-pixel of yellow filter is arranged is two.
Optionally, the pixel unit includes: first kind pixel unit, the first row first of 2 × 2 array of sub-pixels
Column and first row secondary series are provided that the sub-pixel with yellow filter；Second class pixel unit, 2 × 2 sub- picture
The first row secondary series and second row secondary series of pixel array are provided that the sub-pixel with yellow filter；Third class pixel
Unit, the first row first row and second row secondary series of 2 × 2 array of sub-pixels are provided that with yellow filter
Sub-pixel.
Optionally, the phase focus image sensor chip surface includes at least two in three regions, and described three
A region are as follows: first area is provided with first kind pixel unit；Second area is provided with the second class pixel unit；Third area
Domain is provided with third class pixel unit.
Optionally, the phase focus image sensor chip surface includes three regions, and three regions are mutually disjointed, and
The first area is the rectangular area that the middle position of the phase focus image sensor chip is arranged in, left and right side with
The left and right side of the phase focus image sensor chip is overlapped, upper side edge and the phase focus image sensor chip
Upper side edge at least the first pre-determined distance, the lower side at least first of lower side and the phase focus image sensor chip
Pre-determined distance；The second area is the rectangular area that the two sides up and down of the phase focus image sensor chip are arranged in,
And left side at least the second pre-determined distance of the left side of the second area and the phase focus image sensor chip,
Right edge at least the second pre-determined distance of right edge and the phase focus image sensor chip；The third region is to set
It sets in the rectangular area of four diagonal angles of the phase focus image sensor chip.
Optionally, in the array of sub-pixels, the number that the sub-pixel of yellow filter is arranged is four, and is provided with Huang
The sub-pixel of colo(u)r filter be set to 2 × 2 array of sub-pixels first row first row, secondary series and second row first row,
Secondary series.
Phase focus image sensor chip of the invention, due to being provided in pixel unit using yellow filter
Sub-pixel can guarantee also there is biggish light-inletting quantity when light intensity is weaker, allow to have more light enter it is described at
As photosensitive element, guarantee speed and effect that phase focus function is realized.And due in the phase focus image sensor core
On piece, it is different that at least there are two the arrangement positions for the sub-pixel that yellow filter is provided in pixel unit, therefore the phase
Focus image sensor chip can arrange different pixel units according to entering light situation, to be preferably adapted to from difference
The incident ray in direction obtains bigger entering light light intensity, obtains better phase focus effects, ensure that phase focusing speed
While, it can also prevent from leading to phase focusing failure because light-inletting quantity is few.
Detailed description of the invention
Fig. 1 is the local cutting signal of phase focus image sensor chip in a kind of specific embodiment of the invention
Figure.
Fig. 2 is the schematic diagram of yellow filter and green color filter to the light transmittance of the light of different wave length.
Fig. 3 is the schematic top plan view of pixel unit in a kind of specific embodiment of the invention.
Fig. 4 is a kind of pixel unit distribution schematic diagram of phase focus image sensor chip of the invention.
Fig. 5 is the local cutting signal of phase focus image sensor chip in a kind of specific embodiment of the invention
Figure.
Fig. 6 is the schematic top plan view of pixel unit in a kind of specific embodiment of the invention.
Fig. 7 is the schematic top plan view of pixel unit in a kind of specific embodiment of the invention.
Fig. 8 is the schematic top plan view of pixel unit in a kind of specific embodiment of the invention.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to a kind of phase focus image sensor chip work proposed by the present invention
It is further described.
The study found that the phase-detection automatic focusing function of phase focus image sensor it is slack-off under dim light or failure
The reason is that being to use green color filter in the prior art.Due to using green color filter, largely reduced via described green
Colo(u)r filter enters to the light-inletting quantity of the light of photosensitive element corresponding to the green color filter, therefore it is inadequate to will cause light intensity, from
And the phase-detection automatic focusing function of phase focus image sensor is caused to slow or fail.And phase focus image
The phase-detection automatic focusing function of sensor occur under strong light the reason of overexposure be then in the prior art use it is transparent
Optical filter.Due to using transparent filter, do not entered to corresponding to the transparent filter to via the transparent filter
The light of photosensitive element is weakened, and causes final light-inletting quantity excessive, therefore generates overexposure.
Research also found why phase focus image sensor chip in the prior art is easy to issue in low light condition
Slowing for raw phase-detection automatic focusing function is even failed, and is because phase focus image sensor exists in the prior art
The arrangement unification of the phase focus image sensor core on piece.Here unification is referred in a piece of phase focusing figure
As sensor core on piece, the son of phase-detection automatic focusing function is realized in the pixel unit of all phase focus image sensors
Arrangement situation of the pixel in pixel unit is completely the same.In this way, to realize phase-detection automatic focusing function sub-pixel and
Speech can only also go light, very influence light receiving efficiency with a fixed angle, be easy weak regardless of the angle of entering light
Slowing for phase-detection automatic focusing function occurs under striation part even to fail.
Wherein Fig. 1 is phase focus image sensor in a kind of specific embodiment of the invention referring to FIG. 1 to FIG. 4,
The local cutting schematic diagram of chip, Fig. 2 be using yellow filter and green color filter when, for different wave length light it is saturating
The schematic diagram of light rate, Fig. 3 are the schematic top plan view of pixel unit in a kind of specific embodiment of the invention, and Fig. 4 is the present invention
A kind of phase focus image sensor chip pixel unit distribution schematic diagram.
In this specific embodiment, a kind of phase focus image sensor chip is provided, comprising: by multiple pixel lists
Member 301 constitute pixel unit arrays, setting to phase focus sensor chip surface, and the pixel unit 301 be with
The pixel unit 301 of phase-detection automatic focusing function, comprising: the array of sub-pixels being made of multiple sub-pixels 100；The son
Pixel 100 includes: imaging photosensitive element 101, for carrying out photoelectric conversion；Optical filter 102, covering are set to the imaging photosensitive
The upper surface of element 101, for making the light of particular color pass through the optical filter 102 to the imaging photosensitive element 101；At least
The optical filter 102 of two sub-pixels 100 is yellow filter 1021；Yellow filter is set at least two pixel units 301
The arrangement position of 1021 sub-pixel 100 is different.
Referring to Fig. 2, due to being provided with the sub-pixel 100 using yellow filter 1021 in pixel unit 301, and it is yellow
The integral area of curve corresponding to light transmittance of the colo(u)r filter 1021 to the light of different wave length, the i.e. QE of the yellow filter
Quantum efficiency is the integral area of curve corresponding to light transmittance of the green color filter to the light of different wave length, i.e. green filter
Twice of the QE quantum efficiency of mating plate, therefore use yellow filter 1021 that can increase the light-inletting quantity of the sub-pixel 100, guarantee
There is biggish light-inletting quantity when light intensity is weaker, more light is enable to enter the imaging photosensitive element
101, guarantee speed and effect that phase focus function is realized.
Further, since in the phase focus image sensor core on piece, at least there are two set in pixel unit 301
The arrangement position for being equipped with the sub-pixel 100 of yellow filter 1021 is different, therefore but also the phase focus image sensor
Chip can preferably be adapted to the incident ray from different directions, bigger entering light light intensity be obtained, to enough obtain more
Good phase focus effects can also prevent from leading to phase pair because light-inletting quantity is few while ensure that phase focusing speed
Coke failure.
In a specific embodiment, the optical filter 102 is organic material.In fact, institute can be selected as needed
The material for stating optical filter 102 is organic plastics or organic glass.
In a specific embodiment, the phase focus image sensor chip further includes the second lenticule 104, is covered
Lid is set to the upper surface of the pixel unit 301, for changing the optical path for the light for being incident to the pixel unit 301；Institute
State sub-pixel 100 further include: the first lenticule 103, covering is set to the upper surface of the optical filter, for changing being incident to
State the optical path of the light of optical filter 102.
In a specific embodiment, first lenticule 103 is used for optically focused, and light is made to converge to each sub-pixel
100, into the optical filter 102 and imaging photosensitive element 101 of each sub-pixel 100.Second lenticule 104 is used to be divided,
The light for being incident to second lenticule 104 is distributed to each sub-pixel, to realize the phase focus image sensing
The phase focus function of device.Specifically, second lenticule 104 is corresponding to the sub-pixel battle array being made of multiple sub-pixels 100
Column, the different sub-pixels 100 light entered via the second lenticule 104 being dispersed in array of sub-pixels.Each height picture
First lenticule 103 of element 100 will be incident to the light focusing of each sub-pixel 100, and major part is made to be incident to sub-pixel 100
Light can be got by the optical filter 102 of each sub-pixel 100 and imaging photosensitive element 101.Due to each sub-pixel 100
The phase of the light got is different, thus can be come by the out of phase for the light that comparison different subpixel 100 is got
Realize the phase focusing of phase focus image sensor chip.
After the focusing of first lenticule 103, the light for being incident to the imaging photosensitive element 101 is stronger, because
It is automatic that this strengthens the phase-detection auto-focusing speed and phase-detection of phase focus image sensor chip under dim light
Focusing quality.
Referring to Fig. 5, for the partial cutaway of phase focus image sensor chip in a kind of specific embodiment of the invention
Cut schematic diagram.In this specific embodiment, the sub-pixel 100 further includes anti-dazzling screen 107, is set to the optical filter 102
Between the imaging photosensitive element 101, the half of the size having a size of the optical filter 102；In one pixel unit 301 extremely
Rare two sub-pixels 100 are provided with the anti-dazzling screen 107.
Stop to make to be incident on setting from the half of the incident light of the optical filter 102 by the way that the anti-dazzling screen 107 is arranged
Having the light of the sub-pixel 100 of anti-dazzling screen 107 has phase difference, to realize that the phase-detection of the pixel unit 301 is automatic
Focus function.
In a specific embodiment, the anti-dazzling screen 107 is opaque sheet metal.It can also actually set as needed
Set the specific material of the anti-dazzling screen 107.
Referring to Fig. 6, for the schematic top plan view of pixel unit in a kind of specific embodiment of the invention.
In this specific embodiment, the pixel unit 301 includes four sub-pixels 100, is in 2 × 2 arrangement mode.
Between the imaging photosensitive element and optical filter of the sub-pixel 100 of the sub-pixel 100 and second row secondary series of first row first row
It is provided with the anti-dazzling screen 107, and the anti-dazzling screen 107 is arranged close to the edge of the optical filter 102, sheltered from from optical filtering
The half of the incident light of piece 102.
In a specific embodiment, the imaging photosensitive element 101 is arranged in semi-conductive substrate, the optical filtering
Piece 102 is set to the upper surface of the semiconductor substrate, and light is incident to described from above the upper surface of the semiconductor substrate
Phase focus image sensor chip.In a specific embodiment, the semiconductor substrate is the phase focusing figure
As the semiconductor substrate of sensor chip.
In a specific embodiment, the material of the semiconductor substrate is monocrystalline silicon.In fact, the semiconductor lining
The material at bottom can also be polysilicon or the semiconductor materials such as amorphous silicon and germanium, SiGe, GaAs.
In a specific embodiment, optical filter isolation in the back side is provided between the optical filter 102 of each sub-pixel 100
Structure 108 prevents optical crosstalk for keeping apart the optical filter 102 of each sub-pixel 100.In setting back side optical filter
After isolation structure 108, optical crosstalk will not occur between adjacent subpixels 100, influence the light received according to different sub-pixels 100
Phase difference carry out phase focusing result.
In a specific embodiment, dielectric layer is provided between the optical filter 102 and imaging photosensitive element 101
105, for increasing the transmitance of light.In a specific embodiment, 105 surface of dielectric layer also figure is rich in antireflection
Coating, to reduce the reflection of light.In the sub-pixel 100 for being provided with anti-dazzling screen 107, dielectric layer 105 gets around the anti-dazzling screen
107 settings, or it is provided with corresponding groove, for placing the anti-dazzling screen 107, make the sub-pixel 100 with anti-dazzling screen 107
It is able to maintain the same level height with other sub-pixels 100 for not having anti-dazzling screen 107, does not have screening without being raised in other
The sub-pixel 100 of mating plate 107.
In a specific embodiment, be provided between the imaging photosensitive element 101 of each sub-pixel 100 deep trench every
Prevent optical crosstalk for separating the imaging photosensitive element 101 of each sub-pixel 100 from structure 106.Specifically, described
Deep trench isolation structure 106 is set in the groove of the semiconductor substrate, the insulation including being covered in trench interiors and bottom
Layer, and it is filled in the filled layer for covering the groove of insulating layer thickness.In this specific embodiment, the deep trench isolation knot
Structure 106 can be by changing the current potential of filled layer in deep trench isolation structure 106, and then charge tunnelling is prevented to enter filled layer,
And avoid 106 bottom of deep trench isolation structure plasma damage and remaining charge formed conductive channel, so as to improve
The case where leakage current occurred between the imaging photosensitive element 101 of isolation.
In this specific embodiment, the pixel unit 301 includes four sub-pixels 100, and the array of sub-pixels
For 2 × 2 arrays.In other specific embodiments, the pixel unit 301 is also possible to three sub-pixels 100.It is practical
On, the number of 301 sub-pixel 100 of pixel unit can be set as needed.Of 301 sub-pixel 100 of pixel unit
The different color channel that number corresponds to same point is at best able to be perceived several.
In this specific embodiment, when the array of sub-pixels is 2 × 2 array, setting yellow filter 1021
The number of sub-pixel 100 is two.Blue color filter or Red lightscreening plate is then arranged in other two sub-pixel 100.
In this specific embodiment, the pixel unit 301 includes: first kind pixel unit, 2 × 2 sub-pixel
The first row first row and first row secondary series of array are provided that the sub-pixel 100 with yellow filter 1021 (please join
Fig. 8 is read, is the schematic top plan view of pixel unit 301 in a kind of specific embodiment of the invention)；Second class pixel unit, 2
The first row secondary series and second row secondary series of × 2 array of sub-pixels are provided that the sub- picture with yellow filter 1021
Element 100 (referring to Fig. 7, for schematic top plan view of pixel unit 301 in a kind of specific embodiment of the invention)；Third class picture
Plain unit, the first row first row and second row secondary series of 2 × 2 array of sub-pixels are provided that with yellow filter
1021 sub-pixel 100 (please referring to Fig. 3).In the array of sub-pixels, the sub-pixel 100 for being provided with yellow filter 1021 is set
The position set is different, pixel unit 301 corresponding to the array of sub-pixels it is optimal also different by light direction.
In this specific embodiment, in the first kind pixel unit, the sub-pixel 100 with yellow filter 1021
It is transversely arranged in pixel unit 301；In the second class pixel unit, the sub-pixel 100 with yellow filter 1021 is vertical
To being arranged in pixel unit 301；In the third class pixel unit, the sub-pixel 100 with yellow filter 1021 is diagonal
It is arranged in pixel unit 301.
In a specific embodiment, the phase focus image sensor chip surface include in three regions extremely
It is two kinds few, three regions are as follows: first area 401 is provided with first kind pixel unit；Second area 402, is provided with second
Class pixel unit；Third region 403 is provided with third class pixel unit.In the phase focus image sensor chip surface
Different regions is set, inhomogeneous pixel unit 301 is arranged, allows to the phase pair of arranging according to entering light feature
The pixel unit 301 on burnt image sensor chip surface, so that the pixel list of the phase focus image sensor chip surface
Member 301 is with optimal by light direction light.
In a specific embodiment, the phase focus image sensor chip surface include three regions, three
It mutually disjoints in region.
In a specific embodiment, it is saturating to be additionally provided with a third for the phase focus image sensor chip surface
Mirror, the third lens are not drawn in the figure.The third lens shroud all pixels unit 301 wherein, for adjusting incidence
To the light of the phase focus image sensor chip, making the light for being incident to each pixel unit is focused from the phase
What the center position of image sensor chip issued.
In this specific embodiment, the first area 401 is to be arranged in the phase focus image sensor chip
Middle position rectangular area, left and right side is overlapped with the left and right side of the phase focus image sensor chip, upside
Upper side edge at least first pre-determined distance on side and the phase focus image sensor chip, lower side and the phase are focused
The lower side of image sensor chip at least the first pre-determined distance.
Due to being provided that first kind pixel unit, the first row of 2 × 2 array of sub-pixels in first area 401
First row and first row secondary series are provided that the sub-pixel 100 with yellow filter 1021, therefore to realization phase inspection
Survey for two of the automatic focusing function sub-pixels 100 with yellow filter 1021, optimal light angle be it is lateral,
That is left and right directions.Therefore on this position by the setting of first area 401, light source can be made to dissipate to the phase focusing figure
As the light of the left and right directions of sensor chip can be received preferably, to have bigger light-inletting quantity, better phase
Auto-focusing effect is detected, and there is faster phase-detection auto-focusing speed.
In a specific embodiment, first pre-determined distance is the upper of the phase focus image sensor chip
/ 5th of lower side distance.In fact, first pre-determined distance has optimum range, specifically: from phase
/ 6th of the upper and lower sides back gauge of focus image sensor chip arrive phase focus image sensor chip upper and lower sides back gauge
From a quarter.Within this range, the pixel unit array in the first area 401501 can obtain bigger entering light
Amount.
In this specific embodiment, the second area 402 is to be arranged in the phase focus image sensor chip
Two sides up and down rectangular area, and the left side of the second area 402 and the phase focus image sensor chip
Left side at least the second pre-determined distance, the right edge at least second of right edge and the phase focus image sensor chip
Pre-determined distance.Specifically, the second area 402 is adjacent with the first area 401 and connects, and have and the phase pair
The side that the side up and down of burnt image sensor chip is overlapped.
Due to being provided that the second class pixel unit, the first row of 2 × 2 array of sub-pixels in second area 402
Two column and second row secondary series are provided that the sub-pixel 100 with yellow filter 1021, therefore to realization phase-detection
Two of automatic focusing function with yellow filter 1021 sub-pixel 100 for, optimal light angle be it is vertical, i.e.,
Up and down direction.Therefore, on this position by the setting of second area 402, light source can be made to dissipate to the phase focusing figure
As the light of the up and down direction of sensor chip can be received preferably, to make the phase focus image sensor core
Piece has bigger light-inletting quantity, better phase-detection auto-focusing effect, and has faster phase-detection auto-focusing speed
Degree.
In a specific embodiment, second pre-determined distance is a left side for the phase focus image sensor chip
/ 6th of right edge distance.In fact, second pre-determined distance has optimum range, specifically: from phase
/ 8th of the left and right sides back gauge of focus image sensor chip, to the left and right side of phase focus image sensor chip
/ 5th of distance.Within this range, the pixel unit array in the second area 402 can obtain bigger entering light
Amount.
In this specific embodiment, the third region 403 is to be arranged in the phase focus image sensor chip
Four diagonal angles rectangular area.Specifically, the third region 403 and the first area 401,402 phase of second area
It is adjacent and connect, together with the first area 401, second area 402, the phase focus image sensor chip surface is filled out
It is full.
Due to being provided that third class pixel unit, the first row of 2 × 2 array of sub-pixels in third region 403
One column and second row secondary series are provided that the sub-pixel 100 with yellow filter 1021, therefore to realization phase-detection
For two of automatic focusing function are with the sub-pixel 100 of yellow filter 1021, optimal light angle is 45° angle direction
On, i.e., it is in 45 degree of angle directions with the left and right directions of the phase focus image sensor chip.Since light is from the phase
Position focus image sensor chip center is to four of the phase focus image sensor chip diagonally with approximate 45 ° of direction
Therefore outgoing on this position by the setting of third region 403, can be such that light source dissipates and sense to the phase focus image
Four diagonal light of device chip can be received preferably, so that the phase focus image sensor chip be made to have more
Big light-inletting quantity, better phase-detection auto-focusing effect, and there is faster phase-detection auto-focusing speed.
In fact, different kinds of the phase focus image sensor core on piece can also be arranged according to the position of actual light source
The arrangement mode of the pixel unit 301 of class, to be adapted to specific light incidence feature.In some other specific embodiments
In, two regions only can also be set in the phase focus image sensor core on piece, to place two kinds of similar pixel units
301, the difficulty of production and processing can be reduced in this way.
In a specific embodiment, in the array of sub-pixels, the sub-pixel 100 of yellow filter 1021 is set
Number is four.In this case, several pixel units 301 in pixel unit array can only be arranged to Yellow filter
The pixel unit 301 of piece 1021, in order to avoid the yellow light in incident light can only be acquired.In this specific embodiment, the son
In pixel array, the sub-pixel 100 for being provided with yellow filter 1021 is set to: the first row first of 2 × 2 array of sub-pixels
Column, secondary series and second row first row, secondary series.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (12)
1. a kind of phase focus image sensor chip characterized by comprising
The pixel unit array being made of multiple pixel units, setting to phase focusing sensor chip surface,
And the pixel unit is the pixel unit with phase-detection automatic focusing function, comprising:
The array of sub-pixels being made of multiple sub-pixels；
The sub-pixel includes:
Imaging photosensitive element；
Optical filter, covering are set to the upper surface of the imaging photosensitive element；
The optical filter of at least two sub-pixels is yellow filter；
The arrangement position that the sub-pixel of yellow filter is arranged at least two pixel units is different.
2. phase focus image sensor chip according to claim 1, which is characterized in that further include:
Second lenticule, covering are set to the upper surface of the pixel unit；
The sub-pixel further include:
First lenticule, covering are set to the upper surface of the optical filter.
3. phase focus image sensor chip according to claim 1, which is characterized in that the sub-pixel further include:
Anti-dazzling screen is set between the optical filter and imaging photosensitive element, the half of the size having a size of the optical filter；
At least two sub-pixels are provided with the anti-dazzling screen in one pixel unit.
4. phase focus image sensor chip according to claim 1, which is characterized in that the optical filter of each sub-pixel
Between be provided with back side optical filter isolation structure.
5. phase focus image sensor chip according to claim 1, which is characterized in that the optical filter and imaging sense
Dielectric layer is provided between optical element, for increasing the transmitance of light.
6. phase focus image sensor chip according to claim 1, which is characterized in that the imaging sense of each sub-pixel
Deep trench isolation structure is provided between optical element.
7. phase focus image sensor chip according to claim 1, which is characterized in that the pixel unit includes four
A sub-pixel, and the array of sub-pixels is 2 × 2 arrays.
8. phase focus image sensor chip according to claim 7, which is characterized in that in the array of sub-pixels,
The number that the sub-pixel of yellow filter is arranged is two.
9. phase focus image sensor chip according to claim 8, which is characterized in that the pixel unit includes:
First kind pixel unit, the first row first row and first row secondary series of 2 × 2 array of sub-pixels are provided that tool
There is the sub-pixel of yellow filter；
Third class pixel unit, the first row secondary series and second row secondary series of 2 × 2 array of sub-pixels are provided that tool
There is the sub-pixel of yellow filter；
Second class pixel unit, the first row first row and second row secondary series of 2 × 2 array of sub-pixels are provided that tool
There is the sub-pixel of yellow filter.
10. phase focus image sensor chip according to claim 9, which is characterized in that the phase focus image
Sensor chip surface includes at least two in three regions, three regions are as follows:
First area is provided with first kind pixel unit；
Second area is provided with the second class pixel unit；
Third region is provided with third class pixel unit.
11. phase focus image sensor chip according to claim 10, which is characterized in that the phase focus image
Sensor chip surface includes three regions, and three regions are mutually disjointed, and
The first area is the rectangular area that the middle position of the phase focus image sensor chip is arranged in, left and right sides
Side is overlapped with the left and right side of the phase focus image sensor chip, upper side edge and the phase focus image sensor core
The lower side of the upper side edge of piece at least the first pre-determined distance, lower side and the phase focus image sensor chip is at least
First pre-determined distance；
The second area is the rectangular area that the two sides up and down of the phase focus image sensor chip are arranged in, and described
Left side at least the second pre-determined distance of the left side of second area and the phase focus image sensor chip, right edge
With right edge at least the second pre-determined distance of the phase focus image sensor chip；
The third region is the rectangular area that four diagonal angles of the phase focus image sensor chip are arranged in.
12. phase focus image sensor according to claim 7, which is characterized in that in the array of sub-pixels, setting
The number of the sub-pixel of yellow filter is four, and the sub-pixel for being provided with yellow filter is set to 2 × 2 sub-pixel battle array
The first row first rows of column, secondary series and second row first row, secondary series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910307907.5A CN109922270A (en) | 2019-04-17 | 2019-04-17 | Phase focus image sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910307907.5A CN109922270A (en) | 2019-04-17 | 2019-04-17 | Phase focus image sensor chip |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682201A (en) * | 1994-04-15 | 1997-10-28 | Asahi Kogaku Kogyo Kabushiki Kaisha | Method and device for generating pixel signals |
| CN106601761A (en) * | 2015-10-15 | 2017-04-26 | 采钰科技股份有限公司 | Image sensor having yellow filter units |
| CN107124536A (en) * | 2017-04-28 | 2017-09-01 | 广东欧珀移动通信有限公司 | Double-core focus image sensor and its focusing control method and imaging device |
| CN109273471A (en) * | 2018-09-20 | 2019-01-25 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
| CN109449174A (en) * | 2018-11-08 | 2019-03-08 | 德淮半导体有限公司 | Phase focus image sensor and forming method thereof |
-
2019
- 2019-04-17 CN CN201910307907.5A patent/CN109922270A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682201A (en) * | 1994-04-15 | 1997-10-28 | Asahi Kogaku Kogyo Kabushiki Kaisha | Method and device for generating pixel signals |
| CN106601761A (en) * | 2015-10-15 | 2017-04-26 | 采钰科技股份有限公司 | Image sensor having yellow filter units |
| CN107124536A (en) * | 2017-04-28 | 2017-09-01 | 广东欧珀移动通信有限公司 | Double-core focus image sensor and its focusing control method and imaging device |
| CN109273471A (en) * | 2018-09-20 | 2019-01-25 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
| CN109449174A (en) * | 2018-11-08 | 2019-03-08 | 德淮半导体有限公司 | Phase focus image sensor and forming method thereof |
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