CN110062144A - Phase focus image sensor and forming method thereof, working method - Google Patents
Phase focus image sensor and forming method thereof, working method Download PDFInfo
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- CN110062144A CN110062144A CN201910401599.2A CN201910401599A CN110062144A CN 110062144 A CN110062144 A CN 110062144A CN 201910401599 A CN201910401599 A CN 201910401599A CN 110062144 A CN110062144 A CN 110062144A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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Abstract
A kind of phase focus image sensor and forming method thereof, working method, phase focus image sensor includes: semiconductor substrate, the semiconductor substrate includes several image capture areas, each image capture area includes the first sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area, and the image capture area of partial amt is first kind image capture area；Focusing photosensitive unit in the 4th sub-pixel area of first kind image capture area, the focusing photosensitive unit include mutually discrete the first focusing photosensitive structure and the second focusing photosensitive structure；Main photosensitive structure, the main photosensitive structure are located in each the first sub-pixel area, the second sub-pixel area and third sub-pixel area.The performance of the phase focus image sensor is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of phase focus image sensor and forming method thereof,
Working method.
Background technique
Many modern electronic equipments are related to the imaging device using imaging sensor, such as: slr camera, general digital phase
Machine, video camera etc..Currently, widely used focusing mode is mainly contrast focusing (Contrast in imaging device
Detection Auto Focus) and phase-detection auto-focusing (Phase Detection Auto Focus, PDAF).
The working principle of phase-detection auto-focusing is: some pixels are reserved on photosensitive element, be specifically used into
Row phase-detection, the situation that crosses of certain two-beam line in light is assembled in detector lens imaging, by judging this two-beam line
It is mobile to instruct camera lens for difference when the situation that crosses and light focusing are to as plane, so that light beam be made to converge to as in plane.
However, the performance of conventional images sensor is poor.
Summary of the invention
Problems solved by the invention is to provide a kind of phase focus image sensor and forming method thereof, working method, with
Improve the performance of phase focus image sensor.
To solve the above problems, the present invention provides a kind of phase focus image sensor, comprising: semiconductor substrate, it is described
Semiconductor substrate includes several image capture areas, and each image capture area includes the first sub-pixel area, the second sub-pixel area, third
Sub-pixel area and the 4th sub-pixel area, the image capture area of partial amt are first kind image capture area；Positioned at First Kind Graph picture
Focusing photosensitive unit in 4th sub-pixel area of trapping region, the focusing photosensitive unit include the first mutually discrete focusing sense
Photo structure and the second focusing photosensitive structure；Main photosensitive structure, the main photosensitive structure are located at each the first sub-pixel area, second
In sub-pixel area and third sub-pixel area.
Optionally, further includes: the first filter layer positioned at each the first sub-pixel area surface；Positioned at each second sub-pixel area table
Second filter layer in face；Third filter layer positioned at each third sub-pixel area surface, third filter layer, the second filter layer and first
The color of filter layer is different and is used to pass through monochromatic light；The 4th filter layer positioned at each 4th sub-pixel area surface, the
The color of four filter layers is identical as the color of one in the first filter layer, the second filter layer and third filter layer, alternatively, the 4th filter
Photosphere is for passing through natural light.
Optionally, the color of the first filter layer is red, green or blue, and the color of the second filter layer is red, green
Or blue, the color of third filter layer are red, green or blue.
Optionally, further includes: positioned at the second lens of the 4th filter surfaces of first kind image capture area, the second lens
Including the first sub-lens, the second sub-lens and third sub-lens, the first sub-lens are located at the 4th filter of first kind image capture area
The part of the surface and covering the first focusing photosensitive structure, the second sub-lens of photosphere are located at the 4th optical filtering of first kind image capture area
The part of the surface and covering the second focusing photosensitive structure, third sub-lens of layer cover the first sub-lens and the second sub-lens.
Optionally, the semiconductor substrate includes substrate back；First filter layer, the second filter layer, third filter layer and
4th filter layer is respectively positioned on substrate back.
Optionally, the first focusing photosensitive structure includes photodiode, and the second focusing photosensitive structure includes photodiode.
Optionally, the image capture area except first kind image capture area is the second class image capture area；The master is photosensitive
Structure is also located in the 4th sub-pixel area of the second class image capture area.
Optionally, in each image capture area, the first sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th
Sub-pixel area is arranged in the subarray of 2 row * 2 column, and the first sub-pixel area and the 4th sub-pixel area are located at not going together in subarray
And different lines；Second sub-pixel area and third sub-pixel area are located at not going together in subarray and different lines.
Optionally, the color of the 4th filter layer is identical with the color of the first filter layer.
Optionally, the color of first filter layer and the 4th filter layer is green.
Optionally, several described image capture areas are arranged in the array of several row several columns；First kind image capture area
Quantity be it is multiple, first kind image capture area along the array line direction arrange.
The present invention also provides a kind of methods for forming above-mentioned any one phase focus image sensor, comprising: provides half
Conductor substrate, the semiconductor substrate include several image capture areas, and each image capture area includes the first sub-pixel area, second
Sub-pixel area, third sub-pixel area and the 4th sub-pixel area, the image capture area of partial amt are first kind image capture area；?
Focusing photosensitive unit is formed in 4th sub-pixel area of the first kind image capture area, the focusing photosensitive unit includes mutual
Discrete the first focusing photosensitive structure and the second focusing photosensitive structure；In each the first sub-pixel area, the second sub-pixel area and third
Main photosensitive structure is formed in sub-pixel area.
Optionally, further includes: form the first filter layer on the surface of each the first sub-pixel area；In each second sub-pixel area
Surface forms the second filter layer；Third filter layer, third filter layer, the second filter layer are formed on the surface of each third sub-pixel area
It is different with the color of the first filter layer and be used to pass through monochromatic light；The 4th filter is formed on the surface of each 4th sub-pixel area
The color of photosphere, the 4th filter layer is identical as the color of one of the first filter layer, the second filter layer and third filter layer, or
Person, the 4th filter layer is for passing through natural light.
Optionally, further includes: the 4th filter surfaces in first kind image capture area form the second lens, the second lens
Including the first sub-lens, the second sub-lens and third sub-lens, the first sub-lens are located at the 4th filter of first kind image capture area
The part of the surface and covering the first focusing photosensitive structure, the second sub-lens of photosphere are located at the 4th optical filtering of first kind image capture area
The part of the surface and covering the second focusing photosensitive structure, third sub-lens of layer cover the first sub-lens and the second sub-lens.
Optionally, the image capture area except first kind image capture area is the second class image capture area；The master is photosensitive
Structure is also formed in the 4th sub-pixel area of the second class image capture area.
Optionally, in each image capture area, the first sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th
Sub-pixel area is arranged in the subarray of 2 row * 2 column, and the first sub-pixel area and the 4th sub-pixel area are located at not going together in subarray
And different lines；Second sub-pixel area and third sub-pixel area are located at not going together in subarray and different lines.
Optionally, the color of the 4th filter layer is identical with the color of the first filter layer.
Optionally, the color of first filter layer and the 4th filter layer is green.
The present invention also provides a kind of working methods of phase focus image sensor, comprising: provides above-mentioned phase focusing
Imaging sensor；Phase focus image sensor carries out focus operation, photosensitive by comparing the first focusing in photosensitive unit of focusing
Whether the electrical signal exported in structure and the electrical signal of the second focusing photosensitive structure output succeed to judge to focus；Carry out pair
After coke operation, phase focus image sensor carries out shooting operation, in any one first kind image capture area, the first focusing sense
The electrical signal and the first sub-pixel area, the second sub-pixel area and third of photo structure and the second focusing photosensitive structure output
The electrical signal of main photosensitive structure output in pixel region is for being collectively formed a pixel in image.
Optionally, the method for judging focusing situation includes: the first photosensitive knot of focusing in any one focusing photosensitive unit
When difference between the electrical signal exported in structure and the electrical signal of the second focusing photosensitive structure output is less than threshold value, then judge
Phase focus image sensor is focused successfully.
Compared with prior art, technical solution of the present invention has the advantage that
In the phase focus image sensor that technical solution of the present invention provides, focusing photosensitive unit will not occupy First Kind Graph
As the first sub-pixel area, the second sub-pixel area and third sub-pixel area, each focusing photosensitive unit only take up first in trapping region
A sub-pixel area in class image capture area, i.e. the 4th sub-pixel area.First kind image capture area can be used not only for focusing,
It can be used to be imaged.After being focused successfully using focusing photosensitive unit, object is shot.In the process shot to object
In, in any one first kind image capture area, the electricity letter of the first focusing photosensitive structure and the second focusing photosensitive structure output
Number and the first sub-pixel area, the second sub-pixel area and third sub-pixel area in main photosensitive structure output electrical signal use
In a color pixel cell in image is collectively formed.This makes it possible to avoid occurring the phenomenon that white point in image.To sum up, it improves
The performance of phase focus image sensor.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of phase focus image sensor；
Fig. 2 is the structural schematic diagram of phase focus image sensor in one embodiment of the invention；
Fig. 3 is the sectional structure chart of first kind image capture area, and Fig. 3 is the cross-section structure of the cutting line M-N along Fig. 2
Figure；
Fig. 4 is the sectional structure chart of the second class image capture area, and Fig. 4 is the cross-section structure of the cutting line M1-N1 along Fig. 2
Figure；
Fig. 5 is the flow chart that phase focus image sensor is formed in one embodiment of the invention；
Fig. 6 is the work flow diagram of phase focus image sensor in one embodiment of the invention.
Specific embodiment
As described in background, the performance of the phase focus image sensor of the prior art is poor.
A kind of phase focus image sensor, referring to FIG. 1, include: semiconductor substrate 100, the semiconductor substrate 100
Including several sub-pixel areas；Focusing photosensitive unit 110 in semiconductor substrate, focusing photosensitive unit 110 include mutually dividing
Vertical the first focusing photosensitive structure 111 and the second focusing photosensitive structure 112, a focusing photosensitive unit 110 is adjacent positioned at two
Sub-pixel area in, the first focusing photosensitive structure 111 is located in sub-pixel area, and the second focusing photosensitive structure 112 is located at another
In one sub-pixel area；Positioned at first focusing photosensitive structure 111 on filter layer and positioned at second focusing photosensitive structure 112 on
The color of filter layer is identical.
In Fig. 1, the identical region of fill color indicates: the color of the filter layer on sub-pixel area is identical.
In the pixel region for normal imaging, a pixel region includes four sub-pixel areas, for convenience of explanation, by this
Four sub-pixel areas are referred to as the first sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area, and first
Sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area are arranged in the subarray of a 2 row * 2 column, the
One sub-pixel area and the 4th sub-pixel area are located at the different lines of not going together of subarray, the second sub-pixel area and third sub-pixel position
In the different lines of not going together of subarray.For being normally used for the pixel region of imaging, the first sub-pixel area, the second sub-pixel area and the
The color of optical filter on three sub-pixel areas is different and is used to pass through monochromatic light.In one case, for just common
In the color phase of the optical filter in the color and the first sub-pixel area of the optical filter on the pixel region of imaging, the 4th sub-pixel area
Together.
However, since a focusing photosensitive unit 110 needs to occupy two adjacent sub-pixel areas, and the first focusing is photosensitive
Filter layer in structure 111 is identical with the color of the filter layer on the second focusing photosensitive structure 112, therefore for having pair
The pixel region of burnt photosensitive unit 110 there are three the color of the optical filter on sub-pixel is identical (as shown in fig. 1), therefore has
The pixel region of focusing photosensitive unit 110 can not receive primaries, and then not be available the son of focusing photosensitive unit 110 and surrounding
The electrical signal of the photosensitive structure output of pixel region generates color pixel cell jointly, shows: occurring white pixel point on image.
To sum up, the performance of phase focus image sensor is reduced.
On this basis, the present invention provides a kind of phase focus image sensor, comprising: semiconductor substrate, it is described partly to lead
Body substrate includes several image capture areas, and each image capture area includes the first sub-pixel area, the second sub-pixel area, third sub- picture
Plain area and the 4th sub-pixel area, the image capture area of partial amt are first kind image capture area；Positioned at first kind image capture
Focusing photosensitive unit in 4th sub-pixel area in area, the focusing photosensitive unit include the first mutually discrete photosensitive knot of focusing
Structure and the second focusing photosensitive structure；Main photosensitive structure, the main photosensitive structure are located at each the first sub-pixel area, the second sub- picture
In plain area and third sub-pixel area.The performance of the phase focus image sensor is improved.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
One embodiment of the invention provides a kind of phase focus image sensor, incorporated by reference to reference Fig. 2, Fig. 3 and Fig. 4, comprising:
Semiconductor substrate 200, the semiconductor substrate 200 include several image capture areas, and each image capture area includes
The first sub-pixel area A, the second sub-pixel area B, third sub-pixel area C and the 4th sub-pixel area D, the image capture area of partial amt
For first kind image capture area Q1；
Focusing photosensitive unit 210 in the 4th sub-pixel area D of first kind image capture area Q1, the focusing are photosensitive
Unit 210 includes mutually discrete the first focusing photosensitive structure PD1 and the second focusing photosensitive structure PD2；
Main photosensitive structure 240, the main photosensitive structure 240 are located at each the first sub-pixel area A, the second sub-pixel area B
In the C of third sub-pixel area.
The phase focus image sensor further include: the first filter layer 231 positioned at the surface each the first sub-pixel area A；
Positioned at the second filter layer 232 of each second sub-pixel area B surface；Positioned at the third filter layer of each third sub-pixel area C Surface
233, the color of third filter layer 233, the second filter layer 232 and the first filter layer 231 is different and is used to pass through monochrome
Light；The 4th filter layer 234 positioned at each 4th sub-pixel area surface D, the color of the 4th filter layer 234 and the first filter layer 231,
Second filter layer 232 is identical with the color of one in third filter layer 233, alternatively, the 4th filter layer 234 is for passing through nature
Light.
The color of first filter layer 231 is red, green or blue, the color of the second filter layer 232 be red, green or
Blue, the color of third filter layer 233 are red, green or blue.
The phase focus image sensor is back side illumination image sensor or imaging sensor front-illuminated.The present embodiment
In, it is that example is illustrated by back side illumination image sensor of phase focus image sensor.
In the present embodiment, phase focus image sensor is back side illumination image sensor, and the semiconductor substrate 200 includes
Opposite substrate back and substrate face, the first filter layer 231, the second filter layer 232, third filter layer 233 and the 4th filter
Layer 234 is respectively positioned on substrate back.
First kind image capture area Q1 can be used not only for being imaged, and can be used for focusing.
Image capture area except the Q1 of first kind image capture area is the second class image capture area Q2.Second class image capture
Area Q2 is for being imaged, and the second class image capture area Q2 is not used in focusing.In a phase focus image sensor, the second class
The quantity of image capture area Q2 is much larger than the quantity of first kind image capture area.
The main photosensitive structure 240 is also located in the 4th sub-pixel area D of the second class image capture area Q2.
The main photosensitive structure 240 includes photodiode.
The first sub-pixel area A, the second sub-pixel area B, the area of third sub-pixel area C and the 4th sub-pixel area D are identical.
In each image capture area, the first sub-pixel area A, the second sub-pixel area B, third sub-pixel area C and the 4th sub- picture
Plain area D is arranged in the subarray of 2 row * 2 column, the first sub-pixel area A and the 4th sub-pixel area D be located at not going together in subarray and
Different lines；Second sub-pixel area B and third sub-pixel area C is located at not going together in subarray and different lines.
The focusing photosensitive unit 210 includes mutually discrete the first focusing photosensitive structure PD1 and the second photosensitive knot of focusing
Structure PD2, a focusing photosensitive unit 210 are distributed only in the 4th sub-pixel area D of a first kind image capture area Q1.One
Only there is a focusing photosensitive unit 210 in the 4th sub-pixel area D of first kind image capture area Q1.
In the present embodiment, the first focusing photosensitive structure PD1 includes photodiode, and the second focusing photosensitive structure PD2 includes
Photodiode.
In the present embodiment, the focusing principle of phase focus image sensor includes: that during the focusing process, each focusing is photosensitive
The first focusing photosensitive structure PD1 and the second focusing photosensitive structure PD2 in unit 210 receive the light from object and convergence respectively
Line, the first focusing photosensitive structure PD1 and the second focusing photosensitive structure PD2 generate photogenerated charge respectively and export electrical signal, when
The electrical signal and the second focusing exported in the first focusing photosensitive structure PD1 in any one focusing photosensitive unit 210 is photosensitive
When difference between the electrical signal of structure PD2 output is less than threshold value, then judge that phase focus image sensor is focused successfully.
The phase focus image sensor further include: be located at each first filter layer 231,232 and of the second filter layer
First lens 250 of the 4th filter surfaces of 233 surface of third filter layer and the second class image capture area Q2.
The phase focus image sensor further include: positioned at 234 table of the 4th filter layer of first kind image capture area Q1
Second lens 260 in face, the second lens 260 include the first sub-lens 261, the second sub-lens 262 and third sub-lens 263, the
One sub-lens 261 are located at the part of the surface of the 4th filter layer 234 of first kind image capture area Q1 and the first focusing of covering is photosensitive
Structure PD1, the second sub-lens 262 are located at the part of the surface of the 4th filter layer 234 of first kind image capture area Q1 and covering the
Two focusing photosensitive structure PD2, third sub-lens 263 cover the first sub-lens 261 and the second sub-lens 262.
In one embodiment, the color of the 4th filter layer 234 is identical with the color of the first filter layer 231；It is described
The color of first filter layer 231 and the 4th filter layer 234 is green.
The color of 4th filter layer 234 is that green is advantageous in that: human eye is more sensitive to green, therefore can increase
Add the view effect of eye-observation image.
In other embodiments, the color of the 4th filter layer can also be red or blue.
In another embodiment, the 4th filter layer is transparent material, and the 4th filter layer is used for through natural light, such
It is advantageous in that: obtaining bright scene under dark fieid conditions, improve the sensitivity of image capture.
In the present embodiment, several described image capture areas are arranged in the array of several row several columns；First Kind Graph picture is caught
The quantity for obtaining area Q1 is multiple, line direction arrangement of the first kind image capture area Q1 along the array.
In the present embodiment, first kind image capture area Q1 is arranged along the line direction of the array, the first focusing photosensitive structure
The line direction for being oriented parallel to the array at the center of PD1 to the center of the second focusing photosensitive structure PD2.
In the present embodiment, due to the electrical signal of the first focusing photosensitive structure PD1 and the second focusing photosensitive structure PD2 output
Also it can participate in generating image, therefore the full trap capacitor of phase focus image sensor increases.
In the present embodiment, phase focus image sensor further include: analysis module, the analysis module are used for according to first
The difference of the electrical signal of the focusing photosensitive structure PD2 output of focusing photosensitive structure PD1 and second obtains defocusing amount, the defocus
Amount refers to: lens imaging assembles the convergent point of light to the distance for 210 top surface of photosensitive unit of focusing.
In the present embodiment, phase focus image sensor further include: control module, the control module are used for according to
Defocusing amount comes the position of camera lens in adjustment phase place focus image sensor, realizes accurate focusing.
In the present embodiment, each first focusing photosensitive structure PD1, each second focusing photosensitive structure PD2 and each master
The circuit unit of the reading of photosensitive structure 240 is the same, and the circuit unit of reading includes 4T structure.
In the present embodiment, with each first focusing photosensitive structure PD1, each second focusing photosensitive structure PD2 and each
The circuit unit that main photosensitive structure 240 is read is that 4T structure is illustrated.
The 4T structure includes: reset transistor, transmission transistor, follow transistor and selection transistor, described multiple
The drain electrode of bit transistor is connect with power supply line, source electrode and floating the diffusion point connection of reset transistor, the transmission transistor
Drain electrode and floating diffusion point connection, the grid of follow transistor and floating diffusion point connection, the drain electrode of follow transistor with
Power supply line connection, the drain electrode of selection transistor and the source electrode of follow transistor connect, the source electrode and column of the selection transistor
Sense line connection.First focusing photosensitive structure PD1, second focusing photosensitive structure PD2, main photosensitive structure 240 respectively from it is different
The source electrode of transmission transistor in 4T structure connects.
Correspondingly, the present embodiment also provides a kind of method for forming above-mentioned phase focus image sensor, referring to FIG. 5,
The following steps are included:
S01: providing semiconductor substrate, and the semiconductor substrate includes several image capture areas, each image capture area packet
The first sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area are included, the image capture area of partial amt is
First kind image capture area；
S02: focusing photosensitive unit, the focusing sense are formed in the 4th sub-pixel area of the first kind image capture area
Light unit includes mutually discrete the first focusing photosensitive structure and the second focusing photosensitive structure；
S03: main photosensitive structure is formed in each the first sub-pixel area, the second sub-pixel area and third sub-pixel area.
In the present embodiment, further includes: form the first filter layer on the surface of each the first sub-pixel area；In each second sub-pixel
The surface in area forms the second filter layer；Third filter layer, third filter layer, the second filter are formed on the surface of each third sub-pixel area
The color of photosphere and the first filter layer is different and is used to pass through monochromatic light；The is formed on the surface of each 4th sub-pixel area
Four filter layers, the color and the color phase of one of the first filter layer, the second filter layer and third filter layer of the 4th filter layer
Together, alternatively, the 4th filter layer is for passing through natural light.
The method for forming phase focus image sensor further include: the 4th filter layer in first kind image capture area
Surface forms the second lens, and the second lens include the first sub-lens, the second sub-lens and third sub-lens, and the first sub-lens are located at
The part of the surface of 4th filter layer of first kind image capture area and covering the first focusing photosensitive structure, the second sub-lens are located at the
The part of the surface and covering the second focusing photosensitive structure of 4th filter layer of a kind of image capture area, third sub-lens covering first
Sub-lens and the second sub-lens.
Image capture area except first kind image capture area is the second class image capture area.The main photosensitive structure also shape
At in the 4th sub-pixel area of the second class image capture area.
It is formed after main photosensitive structure, the first focusing photosensitive structure and the second focusing photosensitive structure, the first filter layer of formation,
Second filter layer, third filter layer and the 4th filter layer；Forming the first filter layer, the second filter layer, third filter layer and the
After four filter layers, the of each first filter layer, the second filter layer and third filter surfaces and the second class image capture area
Four filter surfaces form the first lens.
In each image capture area, the first sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area
It is arranged in the subarray of 2 row * 2 column, the first sub-pixel area and the 4th sub-pixel area are located at not going together in subarray and different lines；
Second sub-pixel area and third sub-pixel area are located at not going together in subarray and different lines.
The color of 4th filter layer is identical with the color of the first filter layer.
In one embodiment, the color of first filter layer and the 4th filter layer is green.
Another embodiment of the present invention also provides a kind of working method of phase focus image sensor, referring to FIG. 6, including
Following steps:
S11: above-mentioned phase focus image sensor is provided；
S12: phase focus image sensor carries out focus operation, photosensitive by comparing the first focusing in photosensitive unit of focusing
Whether the electrical signal exported in structure and the electrical signal of the second focusing photosensitive structure output succeed to judge to focus；
S13: after carrying out focus operation, phase focus image sensor carries out shooting operation, any one First Kind Graph picture
In trapping region, the electrical signal and the first sub-pixel area, the of the first focusing photosensitive structure and the second focusing photosensitive structure output
The electrical signal of main photosensitive structure output in two sub-pixel areas and third sub-pixel area is for being collectively formed a picture in image
Vegetarian refreshments.
Judgement focusing situation method include: when any one focusing photosensitive unit in, first focusing photosensitive structure in it is defeated
When difference between the electrical signal of electrical signal and the second focusing photosensitive structure output out is less than threshold value, then phase pair is judged
Burnt imaging sensor is focused successfully.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (20)
1. a kind of phase focus image sensor characterized by comprising
Semiconductor substrate, the semiconductor substrate include several image capture areas, and each image capture area includes the first sub-pixel
Area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area, the image capture area of partial amt are that First Kind Graph picture is caught
Obtain area；
Focusing photosensitive unit in the 4th sub-pixel area of first kind image capture area, the focusing photosensitive unit includes phase
Mutually the first discrete focusing photosensitive structure and the second focusing photosensitive structure；
Main photosensitive structure, the main photosensitive structure are located at each the first sub-pixel area, the second sub-pixel area and third sub-pixel
Qu Zhong.
2. phase focus image sensor according to claim 1, which is characterized in that further include: it is located at each first sub- picture
First filter layer on plain area surface；The second filter layer positioned at each second sub-pixel area surface；Positioned at each third sub-pixel area table
The third filter layer in face, the color of third filter layer, the second filter layer and the first filter layer is different and is used to pass through list
Coloured light；The 4th filter layer positioned at each 4th sub-pixel area surface, the color of the 4th filter layer and the first filter layer, second are filtered
Layer is identical with the color of one in third filter layer, alternatively, the 4th filter layer is for passing through natural light.
3. phase focus image sensor according to claim 2, which is characterized in that the color of the first filter layer is red
Color, green or blue, the color of the second filter layer are red, green or blue, the color of third filter layer be red, green or
Blue.
4. phase focus image sensor according to claim 2, which is characterized in that further include: it is located at First Kind Graph picture
Second lens of the 4th filter surfaces of trapping region, the second lens include that the first sub-lens, the second sub-lens and third are saturating
Mirror, the first sub-lens are located at the part of the surface of the 4th filter layer of first kind image capture area and the photosensitive knot of the first focusing of covering
Structure, the second sub-lens are located at the part of the surface of the 4th filter layer of first kind image capture area and the photosensitive knot of the second focusing of covering
Structure, third sub-lens cover the first sub-lens and the second sub-lens.
5. phase focus image sensor according to claim 2, which is characterized in that the semiconductor substrate includes substrate
The back side；First filter layer, the second filter layer, third filter layer and the 4th filter layer are respectively positioned on substrate back.
6. phase focus image sensor according to claim 1, which is characterized in that the first focusing photosensitive structure includes light
Electric diode, the second focusing photosensitive structure includes photodiode.
7. phase focus image sensor according to claim 1, which is characterized in that except first kind image capture area
Image capture area is the second class image capture area；
The main photosensitive structure is also located in the 4th sub-pixel area of the second class image capture area.
8. phase focus image sensor according to claim 1, which is characterized in that in each image capture area, first
Sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area are arranged in the subarray of 2 row * 2 column, the first son
Pixel region and the 4th sub-pixel area are located at not going together in subarray and different lines；Second sub-pixel area and third sub-pixel position
Not going together in subarray and different lines.
9. phase focus image sensor according to claim 8, which is characterized in that the color of the 4th filter layer and
The color of first filter layer is identical.
10. phase focus image sensor according to claim 9, which is characterized in that first filter layer and described
The color of 4th filter layer is green.
11. phase focus image sensor according to claim 1, which is characterized in that several described image capture areas
It is arranged in the array of several row several columns；The quantity of first kind image capture area be it is multiple, first kind image capture area is along described
The line direction of array arranges.
12. a kind of method for forming claim 1 to 11 any one phase focus image sensor characterized by comprising
Semiconductor substrate is provided, the semiconductor substrate includes several image capture areas, and each image capture area includes the first son
Pixel region, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area, the image capture area of partial amt are First Kind Graph
As trapping region；
Focusing photosensitive unit, the focusing photosensitive unit packet are formed in the 4th sub-pixel area of the first kind image capture area
Include mutually discrete the first focusing photosensitive structure and the second focusing photosensitive structure；
Main photosensitive structure is formed in each the first sub-pixel area, the second sub-pixel area and third sub-pixel area.
13. the method according to claim 12 for forming phase focus image sensor, which is characterized in that further include:
The surface of each the first sub-pixel area forms the first filter layer；The second filter layer is formed on the surface of each second sub-pixel area；Each
The surface of third sub-pixel area forms third filter layer, and the color of third filter layer, the second filter layer and the first filter layer is mutually not
It is identical and be used to pass through monochromatic light；The 4th filter layer, the color of the 4th filter layer are formed on the surface of each 4th sub-pixel area
It is identical as the color of one of the first filter layer, the second filter layer and third filter layer, alternatively, the 4th filter layer is for passing through
Natural light.
14. the method according to claim 13 for forming phase focus image sensor, which is characterized in that further include:
4th filter surfaces of first kind image capture area form the second lens, and the second lens are saturating including the first sub-lens, the second son
Mirror and third sub-lens, the first sub-lens are located at the part of the surface of the 4th filter layer of first kind image capture area and covering first
Focusing photosensitive structure, the second sub-lens are located at second pair of the part of the surface of the 4th filter layer of first kind image capture area and covering
Burnt photosensitive structure, third sub-lens cover the first sub-lens and the second sub-lens.
15. the method according to claim 12 for forming phase focus image sensor, which is characterized in that First Kind Graph picture
Image capture area except trapping region is the second class image capture area；The main photosensitive structure is also formed in the second class image capture
In 4th sub-pixel area in area.
16. the method according to claim 12 for forming phase focus image sensor, which is characterized in that caught in each image
It obtains in area, the first sub-pixel area, the second sub-pixel area, third sub-pixel area and the 4th sub-pixel area are arranged in the son of 2 row * 2 column
Array, the first sub-pixel area and the 4th sub-pixel area are located at not going together in subarray and different lines；Second sub-pixel area and
Three sub-pixel areas are located at not going together in subarray and different lines.
17. phase focus image sensor according to claim 16, which is characterized in that the color of the 4th filter layer
It is identical with the color of the first filter layer.
18. phase focus image sensor according to claim 17, which is characterized in that first filter layer and described
The color of 4th filter layer is green.
19. a kind of working method of phase focus image sensor characterized by comprising
Phase focus image sensor described in claim 1 to 11 any one is provided；
Phase focus image sensor carries out focus operation, defeated in the first focusing photosensitive structure in photosensitive unit of focusing by comparing
Whether the electrical signal of electrical signal and the second focusing photosensitive structure output out succeeds to judge to focus；
After carrying out focus operation, phase focus image sensor carries out shooting operation, in any one first kind image capture area,
The electrical signal and the first sub-pixel area, the second sub-pixel of first focusing photosensitive structure and the second focusing photosensitive structure output
The electrical signal of main photosensitive structure output in area and third sub-pixel area is for being collectively formed a pixel in image.
20. the working method of phase focus image sensor according to claim 19, which is characterized in that judgement focusing feelings
The method of condition includes: when the electrical signal exported in the first focusing photosensitive structure in any one focusing photosensitive unit and second pair
When difference between the electrical signal of burnt photosensitive structure output is less than threshold value, then judge that phase focus image sensor is focused successfully.
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