CN110797360B - Pixel arrangement structure - Google Patents
Pixel arrangement structure Download PDFInfo
- Publication number
- CN110797360B CN110797360B CN201910948694.4A CN201910948694A CN110797360B CN 110797360 B CN110797360 B CN 110797360B CN 201910948694 A CN201910948694 A CN 201910948694A CN 110797360 B CN110797360 B CN 110797360B
- Authority
- CN
- China
- Prior art keywords
- pixel
- pixel unit
- arrangement structure
- semiconductor substrate
- size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000010893 electron trap Methods 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
Abstract
The present invention relates to a pixel arrangement structure including a plurality of pixel units arranged in sequence, the pixel units including: a first pixel unit; the second pixel unit is provided with a shading sheet and is used for realizing the phase detection automatic focusing function of the pixel arrangement structure, and the light inlet window of the second pixel unit is larger than a first preset size; the number of the second pixel units is a double number, and the light shielding sheets are arranged in a pair of the second pixel units in pairs. Because the light inlet window of the second pixel unit of the pixel arrangement structure is larger than a first preset size, the second pixel unit can have enough light inlet quantity under the condition of weak light by controlling the size of the first preset size, so that the phase detection automatic focusing function of the pixel arrangement structure is met, and the situation that the pixel arrangement structure cannot realize phase automatic focusing under the condition of weak light or the automatic focusing speed is extremely low is prevented.
Description
Technical Field
The invention relates to the field of image sensors, in particular to a pixel arrangement structure.
Background
The image sensor is a core component of the image pickup apparatus, and can convert an optical signal into an electrical signal to realize an image pickup function.
In the related art, in order to improve the performance of the optical image sensor, a Phase Detection Auto Focus (PDAF) technique is used for focusing. The PDAF technology carries out focusing based on the phase difference principle, is beneficial to improving focusing speed and focusing effect and determining the correct position of a lens so as to prevent an optical image sensor from working normally due to the fact that an image is in a defocused state.
However, in the conventional technique, since the PDAF technique has a shielding effect on light entering the semiconductor substrate, the PDAF technique requires a higher light beam, and if the light irradiation condition is not satisfied, there is a possibility that the phase detection autofocus cannot be performed or the phase detection autofocus speed is extremely low.
Disclosure of Invention
The invention aims to provide a pixel arrangement structure which can reduce the requirement on light rays when the phase detection automatic focusing function is realized.
In order to solve the above technical problem, there is provided a pixel arrangement structure including a plurality of pixel units arranged in sequence, the pixel units including: a first pixel unit; the second pixel unit is provided with a shading sheet and is used for realizing the phase detection automatic focusing function of the pixel arrangement structure, and the light inlet window of the second pixel unit is larger than a first preset size; the number of the second pixel units is a double number, and the light shielding sheets are arranged in a pair of the second pixel units.
Optionally, the first pixel unit and the second pixel unit each include: a semiconductor substrate; the pixel device is arranged in the semiconductor substrate and used for performing photoelectric conversion; and the micro lens is arranged on the upper surface of the semiconductor substrate.
Optionally, the light shielding sheet is disposed between the microlens and the upper surface of the semiconductor substrate.
Optionally, the method further includes: and the optical filter is arranged between the micro lens and the upper surface of the semiconductor substrate.
Optionally, the light shielding sheet is disposed between the optical filter and the upper surface of the semiconductor substrate.
Optionally, an electron trap is disposed in the pixel device.
Optionally, the second pixel unit is obtained by splicing two third pixel units.
Optionally, two third pixel units spliced to form one second pixel unit share the same electron trap, and the size of the electron trap is larger than that of the electron trap of the first pixel unit.
Optionally, the size of the electron trap of the first pixel unit is smaller than the size of the electron trap of the second pixel unit.
Optionally, the size of the light shielding sheet is 0.5 times to 0.745 times the size of the semiconductor substrate of the second pixel unit.
Because the light inlet window of the second pixel unit of the pixel arrangement structure is larger than a first preset size, the second pixel unit can have enough light inlet quantity under the condition of weak light by controlling the size of the first preset size, so that the phase detection automatic focusing function of the pixel arrangement structure is met, and the situation that the pixel arrangement structure cannot realize phase automatic focusing under the condition of weak light or the automatic focusing speed is extremely slow is prevented.
Drawings
Fig. 1 is a schematic top view of a pixel arrangement structure according to an embodiment of the invention.
Fig. 2 is a schematic rear view cross-sectional structure of a pixel arrangement structure according to an embodiment of the invention.
Fig. 3 is a schematic front sectional view of a pixel arrangement structure according to an embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a pixel arrangement structure according to an embodiment of the invention.
Detailed Description
A pixel arrangement structure according to the present invention will be described in detail with reference to the accompanying drawings and the following detailed description.
Fig. 1 is a schematic top view of a pixel arrangement structure according to an embodiment of the invention.
In this embodiment, there is provided a pixel arrangement structure including a plurality of pixel units arranged in sequence, the pixel units including: a first pixel unit 101; the second pixel unit 102 is provided with a light shielding sheet 103 for realizing the phase detection automatic focusing function of the pixel arrangement structure, and a light inlet window 104 of the second pixel unit 102 is larger than a first preset size; the number of the second pixel units 102 is a double number, and the light-shielding sheets 103 are arranged in pairs in a pair of the second pixel units 102.
Since the light entrance window 104 of the second pixel unit 102 is larger than a first preset size, the size of the first preset size can be controlled, so that the second pixel unit 102 has enough light entrance amount under a low light condition to satisfy the phase detection autofocus function of the pixel arrangement structure, and the occurrence of the situation that the pixel arrangement structure cannot realize phase autofocus under the low light condition or the autofocus speed is extremely slow is prevented.
Fig. 2 and 3 are schematic cross-sectional views of a rear-view pixel arrangement structure and a front-view pixel arrangement structure according to an embodiment of the invention, respectively.
In this specific embodiment, each of the first pixel unit 101 and the second pixel unit 102 includes: a semiconductor substrate 204; a pixel device, not shown in the figure, provided in the semiconductor substrate 204 for performing photoelectric conversion; and the micro lens 201 is arranged on the upper surface of the semiconductor substrate 204.
In one embodiment, the semiconductor substrate 204 includes at least one of a germanium substrate and a silicon substrate, and in fact, the specific material of the semiconductor substrate 204, such as a gallium arsenide substrate, a gallium phosphide substrate, etc., can be selected according to the requirement.
In one embodiment, the semiconductor substrate 204 is 2.5um thick and is a silicon substrate.
In one embodiment, the pixel device includes a Photodiode (PD) and a pixel circuit, wherein the pixel circuit may include devices forming various appropriate transistors such as a selection transistor, a reset transistor, and a source follower transistor, and may include a Transfer Gate (TG) and a Floating Diffusion (FD), for example. In practice, the desired pixel circuit may be selected as desired.
In one embodiment, the microlens 201 can be used to capture incident light and change the propagation path of the external light, so that more light can be incident into the semiconductor substrate 204 through refraction and captured by the photodiode in the semiconductor substrate 204.
In one embodiment, a deep trench isolation structure 202 is disposed between each pixel unit for isolating the pixel device. In one embodiment, the deep trench isolation structure 202 has a thickness of 1um, is disposed in the semiconductor substrate 204 of the pixel unit, and is disposed near the upper surface of the semiconductor substrate 204.
In one embodiment, a photosensitive region isolation structure 205 is further disposed between each pixel unit for isolating the photosensitive region of the pixel unit. In one embodiment, the photosensitive region isolation structure 202 has a thickness of 1.5um, is disposed in the semiconductor substrate 204 of the pixel unit, and is disposed near the lower surface of the semiconductor substrate 204.
In this embodiment, the deep trench isolation structure 202 and the photosensitive region isolation structure 205 are disposed at the edge of the pixel unit, so as to achieve isolation between the pixel units.
In one embodiment, the size of the light entrance window 104 after the second pixel unit 102 is shielded by the light shielding sheet 103 is changed by changing the size of the second pixel unit 102. In this embodiment, the size of the second pixel unit 102 is twice the size of the first pixel unit 101. Thus, the requirement for the size of the light-shielding sheet 103 can be reduced, and the light entrance window 104 of the second pixel unit 102 can be increased while the requirement for the size of the light-shielding sheet 103 is reduced.
In practice, the size of the second pixel unit 102 may also be set as desired.
In this embodiment, the light shielding sheet 103 is disposed between the microlens 201 and the upper surface of the semiconductor substrate 204 for shielding part of the incoming light. In the pair of second pixel units 102, one light shielding sheet 103 is disposed near the left side of one second pixel unit 102, and the other light shielding sheet 103 is disposed near the right side of the other second pixel unit 102, so that the incoming light of the two second pixel units 102 has a certain phase difference, thereby implementing the phase detection autofocus function.
In fig. 2 and 3, two second pixel units 102 of a pair of second pixel units 102 are staggered, and only 50% of one side of the two second pixel units 102 are in contact with each other.
In practice, two second pixel units 102 of a pair of second pixel units 102 may also be 100% contacted on one side. This may be set according to actual needs as long as the light-shielding areas of the two second pixel units 102 do not completely overlap, so that the illumination entering into the two second pixel units 102 has a certain phase difference.
In one embodiment, the light shield 103 is a metal light shield that is opaque to light. In the pair of second pixel units, one light shielding sheet 103 is disposed near the left edge, and one light shielding sheet 103 is disposed near the right edge, so that the light incident to the pair of second pixel units 102 can generate a phase difference, and the phase detection autofocus function is realized.
In one embodiment, the size of the light-shielding sheet 103 is 0.5 times to 0.745 times the size of the semiconductor substrate 204 of the second pixel unit 102.
In one embodiment, the size of the light shielding sheet 103 is 0.59 times the size of the semiconductor substrate 204 of the second pixel unit 102. At this time, the phase detection autofocus effect is better, the generated phase difference is enough for the phase detection autofocus, and a larger light entrance window 104 may be provided.
Fig. 4 is a schematic cross-sectional view of a pixel arrangement structure according to an embodiment of the invention.
In this embodiment, the pixel arrangement structure further includes: and an optical filter 401 disposed between the microlens 201 and the upper surface of the semiconductor substrate 204, for allowing light of a specific color to enter the semiconductor substrate 204 and be captured by the pixel device.
In this embodiment, the light shielding sheet 103 is disposed between the optical filter 401 and the upper surface of the semiconductor substrate 204 due to the optical filter 401. In fact, when there is no filter 401, the light-shielding sheet 103 is disposed directly between the microlens 201 and the upper surface of the semiconductor substrate 204.
In this embodiment, when the pair of second pixel units 102 are provided with filters, the filters 401 of the two second pixel units 102 have the same color. In fact, the same is true in the case where the pair of second pixel units 102 is provided with the filter 401, and if one of the pair of second pixel units 102 does not have the filter 401, the other does not have the filter 401.
In one embodiment, the filter 401 includes at least one of a red filter, a green filter, a blue filter, and the like. When the filter 401 is provided, the filter may be provided as needed.
In one embodiment, an electron trap is disposed within the pixel device. The electron trap is not shown in the figure. The electron trap refers to a doped region of N-type and P-type ions in the pixel device.
In one embodiment, the size of the electron trap of the first pixel unit 101 is smaller than the size of the electron trap of the second pixel unit 102. The size of the electron trap is directly related to the size of the full-well capacitor of the pixel device, the larger the size of the full-well capacitor is, the more electrons can be stored in the pixel device, the larger the dynamic range of the pixel unit is, so that the ratio of the brightest condition to the darkest condition of the pixel unit is increased, the influence of noise on the pixel unit can be effectively reduced, the signal-to-noise ratio of the pixel unit is also improved, the requirement of the second pixel unit 102 on the light incoming quantity is reduced, and the situations that automatic focusing cannot be performed under weak light or the automatic focusing speed is extremely slow are prevented.
In one embodiment, the second pixel unit 102 is obtained by stitching two third pixel units 1021. In one embodiment, two third pixel units 1021 that are spliced into one second pixel unit 102 share the same electron trap, and the size of the electron trap is larger than that of the electron trap of the first pixel unit 101.
It should be noted that the pixel devices of the two third pixel units 1021 of the second pixel unit 102 only share the electron trap, and other components of the pixel devices of the two third pixel units 1021 are separated.
In this embodiment, the deep trench isolation structure 202 may be disposed between two third pixel units 1021 that are pieced together to form the second pixel unit 102, or the deep trench isolation structure 202 may not be disposed, but the photosensitive area isolation structure 205 is not necessarily disposed.
In this embodiment, the light shielding sheet 103 will shield an entire third pixel unit 1021 and 0% to 49% of another third pixel unit. Light is incident on the semiconductor substrate 204 of the third pixel unit 1021 through the portion of the third pixel unit 1021 that is not blocked.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A pixel arrangement structure comprising a plurality of pixel units arranged in sequence, the pixel units comprising:
a first pixel unit;
the second pixel unit is provided with a shading sheet and is used for realizing the phase detection automatic focusing function of the pixel arrangement structure, and the light inlet window of the second pixel unit is larger than a first preset size;
the number of the second pixel units is a double number, and the shading sheets are arranged in a pair of the second pixel units;
the first pixel unit and the second pixel unit comprise pixel devices which are arranged in the semiconductor substrate and used for performing photoelectric conversion;
an electron trap is arranged in the pixel device;
the size of the electron trap of the first pixel unit is smaller than that of the electron trap of the second pixel unit.
2. The pixel arrangement structure according to claim 1, wherein each of the first pixel unit and the second pixel unit includes:
a semiconductor substrate;
and the micro lens is arranged on the upper surface of the semiconductor substrate.
3. The pixel arrangement structure according to claim 2, wherein the light shielding sheet is disposed between the microlens and the upper surface of the semiconductor substrate.
4. The pixel arrangement structure according to claim 2, further comprising:
and the optical filter is arranged between the micro lens and the upper surface of the semiconductor substrate.
5. The pixel arrangement structure according to claim 4, wherein the light shielding sheet is disposed between the optical filter and the upper surface of the semiconductor substrate.
6. The pixel arrangement structure according to claim 1, wherein the second pixel unit is obtained by stitching two third pixel units.
7. The pixel arrangement structure according to claim 6, wherein two third pixel units that are spliced into one second pixel unit share the same electron trap, and a size of the electron trap is larger than a size of the electron trap of the first pixel unit.
8. The pixel arrangement structure according to claim 2, wherein a size of the light-shielding sheet is 0.5 times to 0.745 times a size of the semiconductor substrate of the second pixel unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910948694.4A CN110797360B (en) | 2019-10-08 | 2019-10-08 | Pixel arrangement structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910948694.4A CN110797360B (en) | 2019-10-08 | 2019-10-08 | Pixel arrangement structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110797360A CN110797360A (en) | 2020-02-14 |
| CN110797360B true CN110797360B (en) | 2022-03-29 |
Family
ID=69438840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910948694.4A Active CN110797360B (en) | 2019-10-08 | 2019-10-08 | Pixel arrangement structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110797360B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112103303A (en) * | 2020-09-18 | 2020-12-18 | 深圳市汇顶科技股份有限公司 | Pixel unit array, sensor chip, and electronic apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289131A (en) * | 2010-06-17 | 2011-12-21 | 奥林巴斯株式会社 | Image pickup apparatus |
| CN106233712A (en) * | 2014-04-21 | 2016-12-14 | 三星电子株式会社 | Imaging device and photographic attachment |
| CN107395990A (en) * | 2017-08-31 | 2017-11-24 | 珠海市魅族科技有限公司 | Phase focusing method and device, terminal, computer installation and readable storage medium storing program for executing |
| CN109273471A (en) * | 2018-09-20 | 2019-01-25 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
| CN109449174A (en) * | 2018-11-08 | 2019-03-08 | 德淮半导体有限公司 | Phase focus image sensor and forming method thereof |
| CN109922270A (en) * | 2019-04-17 | 2019-06-21 | 德淮半导体有限公司 | Phase focus image sensor chip |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101773168B1 (en) * | 2011-07-21 | 2017-09-12 | 삼성전자주식회사 | Apparatus and method for controlling focus by image sensor for outputting phase difference signal |
| US10498947B2 (en) * | 2017-10-30 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor including light shielding layer and patterned dielectric layer |
-
2019
- 2019-10-08 CN CN201910948694.4A patent/CN110797360B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289131A (en) * | 2010-06-17 | 2011-12-21 | 奥林巴斯株式会社 | Image pickup apparatus |
| CN106233712A (en) * | 2014-04-21 | 2016-12-14 | 三星电子株式会社 | Imaging device and photographic attachment |
| CN107395990A (en) * | 2017-08-31 | 2017-11-24 | 珠海市魅族科技有限公司 | Phase focusing method and device, terminal, computer installation and readable storage medium storing program for executing |
| CN109273471A (en) * | 2018-09-20 | 2019-01-25 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
| CN109449174A (en) * | 2018-11-08 | 2019-03-08 | 德淮半导体有限公司 | Phase focus image sensor and forming method thereof |
| CN109922270A (en) * | 2019-04-17 | 2019-06-21 | 德淮半导体有限公司 | Phase focus image sensor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110797360A (en) | 2020-02-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6737626B1 (en) | Image sensors with underlying and lateral insulator structures | |
| US9786714B2 (en) | Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic device | |
| US8670056B2 (en) | Solid-state imaging apparatus | |
| US20110032405A1 (en) | Image sensor with transfer gate having multiple channel sub-regions | |
| EP2657972A1 (en) | Solid-state imaging device, method of manufacturing the same, and electronic apparatus | |
| KR102197476B1 (en) | Image sensor | |
| CN105580138B (en) | Solid-state imaging device and electronic apparatus | |
| JP2012169530A (en) | Solid state image sensor, manufacturing method therefor, and electronic apparatus | |
| CN105308746A (en) | Solid-state image-pickup device, method for producing same and electronic equipment | |
| CN104979365A (en) | IMAGE SENSOR pixel and the image sensor | |
| US20140302630A1 (en) | Method for inhibiting the electric crosstalk of back illuminated cmos image sensor | |
| JP2014527307A (en) | Image sensor unit pixel and light receiving element thereof | |
| KR101476035B1 (en) | Manufacturing method of solid-state image pickup device and solid-state image pickup device | |
| TWI413246B (en) | Peninsula transfer gate in a cmos pixel | |
| TWI711173B (en) | Solid-state imaging device | |
| KR19980059901A (en) | Manufacturing Method of Solid State Imaging Device | |
| US20100214464A1 (en) | Solid-state imaging apparatus | |
| CN110797360B (en) | Pixel arrangement structure | |
| WO2021149349A1 (en) | Imaging element and imaging device | |
| US8618623B2 (en) | Solid-state image pickup device and method for manufacturing same, and image pickup apparatus | |
| US9876041B2 (en) | Solid-state imaging device and method of manufacturing the same | |
| US20090267070A1 (en) | Multilayer image sensor structure for reducing crosstalk | |
| CN109713002B (en) | Image sensor and forming method thereof | |
| KR100262035B1 (en) | Method for manufacturing solid-state image sensor | |
| JPH06205303A (en) | Smear removing of camera charge coupling device type |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |