CN109917261B - Method and device for determining whether selection of Schottky diode is proper or not - Google Patents
Method and device for determining whether selection of Schottky diode is proper or not Download PDFInfo
- Publication number
- CN109917261B CN109917261B CN201910127024.6A CN201910127024A CN109917261B CN 109917261 B CN109917261 B CN 109917261B CN 201910127024 A CN201910127024 A CN 201910127024A CN 109917261 B CN109917261 B CN 109917261B
- Authority
- CN
- China
- Prior art keywords
- schottky diode
- temperature
- heating power
- iteration
- target temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The application discloses a method and a device for determining whether selection of a Schottky diode is appropriate, specifically, a target temperature of the Schottky diode after temperature rise can be obtained through multiple iterative computations, and when a difference value between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is smaller than or equal to a first threshold value, the temperature of the Schottky diode does not rise all the time but approaches to be stable. In this embodiment of the application, when the temperature of the schottky diode tends to be stable, it is determined whether the target temperature corresponding to the nth iteration is lower than the junction temperature threshold of the schottky diode, if so, it is determined that the temperature of the schottky diode does not exceed the junction temperature threshold, it is determined that the selection of the schottky diode is proper, and if not, it is determined that the selection of the schottky diode is not proper. Thereby determining whether the selection of the schottky diode is appropriate.
Description
Technical Field
The present application relates to the field of vehicles, and more particularly, to a method and apparatus for determining whether schottky diode selection is appropriate.
Background
Many Control units exist in vehicles at present, such as a Telematics BOX (T-BOX) and an Electronic Control Unit (ECU). These control units operate normally and require power supply circuitry to supply power thereto. In a power supply circuit, a DC-DC circuit structure is often included, and a schottky diode is an important device in the DC-DC circuit structure. Therefore, the selection of the schottky diode is particularly important, and if the schottky diode is not properly selected, for example, the temperature of the schottky diode exceeds the device junction temperature threshold of the schottky diode, the schottky diode may be damaged, the power circuit may not work normally, and further, the control unit, such as the vehicle-mounted T-Box and the ECU, may not work normally.
Therefore, how to determine whether the selection of the schottky diode is proper is a problem which needs to be solved urgently at present.
Disclosure of Invention
The technical problem to be solved by the application is how to determine whether the selection of the schottky diode is proper, and a method and a device for determining whether the selection of the schottky diode is proper are provided.
In a first aspect, an embodiment of the present application provides a method for determining whether a selection of a schottky diode is appropriate, where the method includes:
obtaining the target temperature of the Schottky diode after the temperature is increased through repeated iterative calculation;
in the multiple iteration processes, if the difference value between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is less than or equal to a first threshold value; and judging whether the target temperature corresponding to the nth iteration is smaller than the junction temperature threshold of the Schottky diode, if so, determining that the Schottky diode is properly selected, and if so, determining that the Schottky diode is improperly selected.
Optionally, the target temperature corresponding to the nth iteration is determined as follows:
calculating the forward heating power and the reverse heating power of the Schottky diode according to the working environment parameters of the Schottky diode and the device specification of the Schottky diode;
determining the rising temperature of the Schottky diode according to the forward heating power and the reverse heating power;
obtaining a target temperature corresponding to the nth iteration according to the first temperature and the rising temperature; the first temperature is a target temperature corresponding to the (n-1) th iteration.
Optionally, the environmental parameter includes an output current of the schottky diode; the forward heating power of the Schottky diode is obtained by calculation according to the forward breakover voltage of the Schottky diode at the first temperature and the output current of the Schottky diode; the forward turn-on voltage of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
Optionally, the environmental parameter includes an input voltage of the schottky diode, and the reverse heating power of the schottky diode is calculated according to a leakage current of the schottky diode at the first temperature and the input voltage of the schottky diode; the leakage current of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
Optionally, the determining the rising temperature of the schottky diode according to the forward heating power and the reverse heating power includes:
and determining the rising temperature of the Schottky diode according to the forward heating power, the reverse heating power and the thermal resistance of the Schottky diode.
In a second aspect, the present application provides an apparatus for determining whether a selection of a schottky diode is appropriate, the apparatus including:
the iteration unit is used for obtaining the target temperature of the Schottky diode after the temperature is increased through multiple times of iterative calculation;
a judging unit, configured to, in the multiple iteration processes, if a difference between a target temperature corresponding to an nth iteration and a target temperature corresponding to an n-1 st iteration is less than or equal to a first threshold,
and judging whether the target temperature corresponding to the nth iteration is smaller than the junction temperature threshold of the Schottky diode, if so, determining that the Schottky diode is properly selected, and if so, determining that the Schottky diode is improperly selected.
Optionally, the target temperature corresponding to the nth iteration is determined as follows:
calculating the forward heating power and the reverse heating power of the Schottky diode according to the working environment parameters of the Schottky diode and the device specification of the Schottky diode;
determining the rising temperature of the Schottky diode according to the forward heating power and the reverse heating power;
obtaining a target temperature corresponding to the nth iteration according to the first temperature and the rising temperature; the first temperature is a target temperature corresponding to the (n-1) th iteration.
Optionally, the environmental parameter includes an output current of the schottky diode; the forward heating power of the Schottky diode is obtained by calculation according to the forward breakover voltage of the Schottky diode at the first temperature and the output current of the Schottky diode; the forward turn-on voltage of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
Optionally, the environmental parameter includes an input voltage of the schottky diode, and the reverse heating power of the schottky diode is calculated according to a leakage current of the schottky diode at the first temperature and the input voltage of the schottky diode; the leakage current of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
Optionally, the determining the rising temperature of the schottky diode according to the forward heating power and the reverse heating power includes:
and determining the rising temperature of the Schottky diode according to the forward heating power, the reverse heating power and the thermal resistance of the Schottky diode.
Compared with the prior art, the embodiment of the application has the following advantages:
the embodiment of the application provides a method and a device for determining whether selection of a Schottky diode is appropriate, specifically, a target temperature of the Schottky diode after the temperature is increased can be obtained through multiple times of iterative calculation, and when a difference value between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is smaller than or equal to a first threshold value, the temperature of the Schottky diode is not always increased but is approximately stable. It will be appreciated that if the temperature of the schottky diode is rising, it is likely that the temperature of the schottky diode will exceed the junction temperature threshold of the schottky diode after a period of operation. In this embodiment of the application, when the temperature of the schottky diode tends to be stable, it is determined whether the target temperature corresponding to the nth iteration is less than the junction temperature threshold of the schottky diode, if so, it is determined that the temperature of the schottky diode does not exceed the junction temperature threshold, it is determined that the selection of the schottky diode is appropriate, and if the target temperature corresponding to the nth iteration is greater than or equal to the junction temperature threshold, it is determined that the selection of the schottky diode is inappropriate. Therefore, whether the selection of the Schottky diode is proper or not can be determined by the scheme provided by the embodiment of the application.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic flowchart of a method for determining whether schottky diode selection is appropriate according to an embodiment of the present disclosure;
fig. 2 is a schematic flowchart of a method for determining a target temperature corresponding to an nth iteration according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of an apparatus for determining whether selection of a schottky diode is appropriate according to an embodiment of the present disclosure.
Detailed Description
In order to make the technical solutions of the present application better understood, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The inventor of the present application has found that, in the conventional technology, the selection of the schottky diode in the power circuit is particularly important, and if the schottky diode is not properly selected, for example, the temperature of the schottky diode exceeds the device junction temperature threshold of the schottky diode, the schottky diode may be damaged, the power circuit may not work normally, and further, the control unit, such as the on-board T-Box and the ECU, may not work normally.
In view of this, the embodiments of the present application provide a method and an apparatus for determining whether a schottky diode is properly selected, and specifically, a target temperature after a temperature of the schottky diode is increased may be obtained through multiple iterative computations, and when a difference between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is less than or equal to a first threshold, it indicates that the temperature of the schottky diode is not always increased but is approximately stable. It will be appreciated that if the temperature of the schottky diode is rising, it is likely that the temperature of the schottky diode will exceed the junction temperature threshold of the schottky diode after a period of operation. In this embodiment of the application, when the temperature of the schottky diode tends to be stable, it is determined whether the target temperature corresponding to the nth iteration is less than the junction temperature threshold of the schottky diode, if so, it is determined that the temperature of the schottky diode does not exceed the junction temperature threshold, it is determined that the selection of the schottky diode is appropriate, and if the target temperature corresponding to the nth iteration is greater than or equal to the junction temperature threshold, it is determined that the selection of the schottky diode is inappropriate. Therefore, whether the selection of the Schottky diode is proper or not can be determined by the scheme provided by the embodiment of the application.
It will be appreciated that in practice, whether the schottky diode in the DC-DC circuit configuration is properly selected may not only consider whether the temperature of the schottky diode will exceed the junction temperature threshold, but also consider other parameters, such as current rating, voltage rating, reverse recovery time, etc. The embodiment of the present application mainly introduces a factor that whether the temperature of the schottky diode exceeds the junction temperature threshold is used to determine whether the schottky diode is properly selected, and the determination of whether the selection of other parameters is proper is not a key point of the embodiment of the present application, and therefore, detailed description is not provided in the present application.
Various non-limiting embodiments of the present application are described in detail below with reference to the accompanying drawings.
Exemplary method
Referring to fig. 1, a schematic flow chart of a method for determining whether schottky diode selection is appropriate according to an embodiment of the present disclosure is shown.
The method provided by the embodiment of the application can be realized through the following steps S101 to S102, for example.
S101: and obtaining the target temperature of the Schottky diode after the temperature is increased through repeated iterative calculation.
It should be noted that, in the embodiment of the present application, the schottky diode is a schottky diode disposed in a DC-DC circuit structure. The embodiment of the present application does not specifically limit the specific topology of the DC-DC circuit structure. The specific topology of the DC-DC circuit structure may be an inductive type topology such as a boost topology or a buck topology. The specific topology of the DC-DC circuit structure may be a capacitive boost topology, such as a charge pump topology.
It should be noted that, in the embodiment of the present application, the process of the multiple iterative calculations may be understood as a process of calculating the target temperature of the schottky diode after the temperature rise during the operation. Since the temperature rise of the schottky diode during operation is gradually increased, in the embodiment of the present application, the target temperature of the schottky diode after the temperature rise during operation is determined by using a plurality of iterative calculations.
It should be noted that the target temperature corresponding to the nth iteration is equal to the sum of the temperature of the schottky diode at the beginning of the nth iteration and the rising temperature of the schottky diode during the nth iteration. And the temperature of the Schottky diode at the beginning of the nth iteration is equal to the target temperature corresponding to the (n-1) th iteration. The temperature of the schottky diode at the beginning of the 1 st iteration is the initial temperature. The initial temperature is not particularly limited in the embodiments of the present application, and may be, for example, 85 ℃.
S102: in the multiple iteration process, if the difference value between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is less than or equal to the first threshold value,
and judging whether the target temperature corresponding to the nth iteration is smaller than the junction temperature threshold of the Schottky diode, if so, determining that the Schottky diode is properly selected, and if so, determining that the Schottky diode is not properly selected.
It is understood that in practical applications, if the temperature of the schottky diode is rising all the time, the temperature of the schottky diode will likely exceed the junction temperature threshold of the schottky diode after the schottky diode is operated for a period of time. If the temperature of the schottky diode tends to be stable after rising for a period of time, and after the temperature of the schottky diode tends to be stable, the temperature of the schottky diode (i.e., the target temperature corresponding to the nth iteration) is lower than the junction temperature threshold of the schottky diode, it may be determined that the temperature of the schottky diode does not exceed the junction temperature threshold, which indicates that the schottky diode is not damaged due to an excessively high temperature during the operation process to some extent.
In view of this, in the embodiment of the present application, in the multiple iterations, it is determined whether the temperature of the schottky diode tends to be stable by determining whether a difference between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is less than or equal to a first threshold. And if the difference value between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is smaller than or equal to a first threshold value, indicating whether the temperature of the Schottky diode tends to be stable.
It can be understood that, if the difference between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is greater than the first threshold after the iterations, it indicates that the temperature of the schottky diode continuously rises, and accordingly may indicate that the selection of the schottky diode is not appropriate. Or after iteration is carried out for multiple times, the difference value between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is smaller than or equal to the first threshold, and the target temperature corresponding to the nth iteration is larger than or equal to the junction temperature threshold of the Schottky diode, so that the Schottky diode is represented to be not suitable to select.
The first threshold is not specifically limited in the embodiment of the present application, and as an example, a value of the first threshold may be 0.
The junction temperature threshold of the schottky diode is not particularly limited in the embodiments of the present application, and the junction temperature threshold of the schottky diode may be determined according to the device specification of the schottky diode.
As can be seen from the above description, according to the method for determining whether the selection of the schottky diode is appropriate, the target temperature of the schottky diode after the temperature is increased may be obtained through multiple iterations, and when the difference between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is less than or equal to the first threshold, it is determined that the temperature of the schottky diode is not always increased but is approximately stable. It will be appreciated that if the temperature of the schottky diode is rising, it is likely that the temperature of the schottky diode will exceed the junction temperature threshold of the schottky diode after a period of operation. In this embodiment of the application, when the temperature of the schottky diode tends to be stable, it is determined whether the target temperature corresponding to the nth iteration is less than the junction temperature threshold of the schottky diode, if so, it is determined that the temperature of the schottky diode does not exceed the junction temperature threshold, it is determined that the selection of the schottky diode is appropriate, and if the target temperature corresponding to the nth iteration is greater than or equal to the junction temperature threshold, it is determined that the selection of the schottky diode is inappropriate. Therefore, whether the selection of the Schottky diode is proper or not can be determined by the scheme provided by the embodiment of the application.
As described above, in the embodiment of the present application, the target temperature after the temperature of the schottky diode is increased may be obtained through multiple iterations, and the manner of determining the target temperature corresponding to the nth iteration is described below by taking the nth iteration as an example.
Referring to fig. 2, the figure is a schematic flowchart of a method for determining a target temperature corresponding to an nth iteration according to an embodiment of the present application.
The method for determining the target temperature corresponding to the nth iteration provided by the embodiment of the application can be implemented by the following steps S201 to S203, for example.
S201: and calculating the forward heating power and the reverse heating power of the Schottky diode according to the working environment parameters of the Schottky diode and the device specification of the Schottky diode.
It should be noted that the embodiments of the present application do not specifically limit the environmental parameters of the schottky diode, and as an example, the environmental parameters may include, for example, the output current of the schottky diode; as yet another example, the environmental parameter may include an input voltage of the schottky diode.
The device specification mentioned in the embodiment of the present application is used for characterizing the hardware characteristics of the schottky diode. The device specification may embody, for example, a reverse rated voltage, a standard temperature, a leakage current corresponding to the standard temperature, a forward conduction voltage, a temperature saving property, a thermal resistance, and the like of the schottky diode.
In an implementation manner of the embodiment of the present application, when the specific topology of the DC-DC circuit structure in S101 may be a buck topology, the forward heating power of the schottky diode may be calculated according to a forward conduction voltage of the schottky diode at the first temperature and an output current of the schottky diode.
It should be noted that the output current of the schottky diode mentioned in the embodiments of the present application may be determined according to the specific usage environment of the schottky diode.
In the embodiment of the present application, the forward turn-on voltage of the schottky diode at the first temperature may be determined according to the device specification of the schottky diode, and specifically, the forward turn-on voltage of the schottky diode at the first temperature may be calculated by the following formula (1).
VF ═ VF (25 ℃) + A Δ T equation (1)
Wherein:
VF represents a forward turn-on voltage of the schottky diode at the first temperature;
VF (25 ℃) represents a forward conduction voltage of the schottky diode at 25 ℃, VF (25 ℃) can be determined according to device specifications of the schottky diode, and specifically, VF (25 ℃) can be determined according to device specifications of the schottky diode;
a is a constant and is calibrated according to the device specification of the Schottky diode; for example, the forward conduction voltage-forward conduction current V of the Schottky diode can be determined according to the forward conduction voltageF-IFA curve, a calibration constant A;
Δ T is the difference between the first temperature and 25 ℃.
In an implementation manner of the embodiment of the present application, when the specific topology of the DC-DC circuit structure in S101 may be a buck topology, the reverse heating power of the schottky diode may be calculated according to the leakage current of the schottky diode at the first temperature and the input voltage of the schottky diode.
It should be noted that the input voltage of the schottky diode mentioned in the embodiments of the present application may be determined according to the specific usage environment of the schottky diode.
In the embodiment of the present application, the leakage current of the schottky diode at the first temperature may be determined according to the device specification of the schottky diode. Specifically, the leakage current of the schottky diode at the first temperature may be calculated by the following equations (2) and (3).
IR1IR (25 ℃ C.) B ^ (Delta T/10) formula (2)
IR2Ir (VR) ^ C Δ VR formula (3)
Wherein:
IR1representing a leakage current of the schottky diode at a first temperature and a reverse rated voltage;
IR (25 ℃) represents the leakage current of the Schottky diode at 25 ℃ and reverse rated voltage;
Δ T is the difference between the first temperature and 25 ℃;
b is a constant and is calibrated according to the device specification of the Schottky diode; for example, the reverse voltage-leakage current V of the Schottky diodeR-IRA curve, a calibration constant B;
IR2representing a leakage current of the schottky diode at a first temperature and an input voltage; namely leakage current used for calculating reverse heating power;
ir (vr) represents a leakage current of the schottky diode at a first temperature and a reverse rated voltage;
c is a constant and is calibrated according to the device specification of the Schottky diode; for example, the reverse voltage-leakage current V of the Schottky diodeR-IRA curve, calibration constant C;
Δ VR represents the difference between the reverse rated voltage and the input voltage of the schottky diode.
It is understood that the leakage current calculated by the formula (2) takes into account the variation of the leakage current caused by the difference between the first temperature and 25 c, and the leakage current calculated by the formula (3) takes into account not only the variation of the leakage current caused by the difference between the first temperature and 25 c but also the variation of the leakage current caused by the difference between the reverse rated voltage and the input voltage at which the schottky diode is actually used.
S202: and determining the rising temperature of the Schottky diode according to the forward heating power and the reverse heating power.
In the embodiment of the present application, in the specific implementation, S202 may determine the rising temperature of the schottky diode according to the forward heating power and the reverse heating power, considering that the rising temperature is related to not only the heating power (including the forward heating power and the reverse heating power) but also the thermal resistance of the schottky diode. Specifically, the total heating power may be obtained according to the forward heating power and the reverse heating power, and the total heating power is multiplied by the thermal resistance to obtain the rising temperature of the schottky diode.
S203: and obtaining a target temperature corresponding to the nth iteration according to the first temperature and the rising temperature, wherein the first temperature is the target temperature corresponding to the (n-1) th iteration.
And after the rising temperature of the Schottky diode is obtained, adding the first temperature to the rising temperature to obtain the target temperature corresponding to the nth iteration.
With respect to the methods provided in the above embodiments, the method for determining whether the selection of the schottky diode is suitable provided in the embodiments of the present application is described below with specific data.
This can be understood in conjunction with table 1 below.
TABLE 1
In table 1, STEP represents the number of iterations and temperature Tj represents the temperature of the schottky diode at the beginning of each iteration; vf (v) represents the forward conduction voltage of the schottky diode (which can be calculated by equation (1)); the leakage current (mA) represents the leakage current of the schottky diode and can be calculated according to the formula (2) and the formula (3).
As can be seen from table 1, at iteration 1 (corresponding to STEP 0), the temperature rose 9.073 ℃; for the second iteration (corresponding to STEP 1), the temperature rises by 0.284 ℃; for the third iteration (corresponding to STEP 2), the temperature rose by 0.014 ℃; for the fourth iteration (corresponding to STEP 3), the temperature rises by 0.001 ℃; and then, the temperature rises by 0 ℃ in each iteration, for example, if the difference between the target temperature corresponding to the 5 th iteration and the target temperature corresponding to the 4 th iteration is 0 and is smaller than the first threshold, the temperature of the schottky diode is determined to tend to be stable, and at the moment, whether the selection of the schottky diode is proper or not can be determined by judging the magnitude relation between the target temperature corresponding to the 5 th iteration and the junction temperature threshold of the schottky diode. For example, the junction temperature threshold of the schottky diode is 125 ℃, and the target temperature 94.371 ℃ corresponding to the 5 th iteration is less than 125 ℃, so that the schottky diode is judged to be suitable to be selected.
Exemplary device
Based on the method provided by the above embodiment, the embodiment of the present application further provides an apparatus, which is described below with reference to the accompanying drawings.
Referring to fig. 3, the figure is a schematic structural diagram of an apparatus for determining whether the selection of the schottky diode is appropriate according to an embodiment of the present disclosure.
The device for determining whether the selection of the schottky diode is appropriate provided by the embodiment of the application may specifically include, for example: an iteration unit 310 and a decision unit 320.
The iteration unit 310 is configured to obtain a target temperature of the schottky diode after the temperature is increased through multiple iterative computations;
a determining unit 320, configured to determine, in the multiple iteration processes, whether a target temperature corresponding to an nth iteration is smaller than a junction temperature threshold of the schottky diode if a difference between the target temperature corresponding to the nth iteration and the target temperature corresponding to an n-1 st iteration is smaller than or equal to a first threshold, determine that the schottky diode is properly selected if the target temperature corresponding to the nth iteration is smaller than the junction temperature threshold, and determine that the schottky diode is improperly selected if the target temperature corresponding to the nth iteration is larger than or equal to the junction temperature threshold.
Optionally, the target temperature corresponding to the nth iteration is determined as follows:
calculating the forward heating power and the reverse heating power of the Schottky diode according to the working environment parameters of the Schottky diode and the device specification of the Schottky diode;
determining the rising temperature of the Schottky diode according to the forward heating power and the reverse heating power;
obtaining a target temperature corresponding to the nth iteration according to the first temperature and the rising temperature; the first temperature is a target temperature corresponding to the (n-1) th iteration.
Optionally, the environmental parameter includes an output current of the schottky diode; the forward heating power of the Schottky diode is obtained by calculation according to the forward breakover voltage of the Schottky diode at the first temperature and the output current of the Schottky diode; the forward turn-on voltage of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
Optionally, the environmental parameter includes an input voltage of the schottky diode, and the reverse heating power of the schottky diode is calculated according to a leakage current of the schottky diode at the first temperature and the input voltage of the schottky diode; the leakage current of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
Optionally, the determining the rising temperature of the schottky diode according to the forward heating power and the reverse heating power includes:
and determining the rising temperature of the Schottky diode according to the forward heating power, the reverse heating power and the thermal resistance of the Schottky diode.
Since the apparatus 300 is an apparatus corresponding to the method provided in the above method embodiment, and the specific implementation of each unit of the apparatus 300 is the same as that of the above method embodiment, for the specific implementation of each unit of the apparatus 300, reference may be made to the description part of the above method embodiment, and details are not repeated here.
As can be seen from the above description, the device for determining whether the selection of the schottky diode is appropriate, which is provided by the embodiment of the present application, may obtain the target temperature of the schottky diode after the temperature of the schottky diode is increased through multiple iterative computations, and when a difference between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is less than or equal to a first threshold, it indicates that the temperature of the schottky diode is not always increased, but is approximately stable. It will be appreciated that if the temperature of the schottky diode is rising, it is likely that the temperature of the schottky diode will exceed the junction temperature threshold of the schottky diode after a period of operation. In this embodiment of the application, when the temperature of the schottky diode tends to be stable, it is determined whether the target temperature corresponding to the nth iteration is less than the junction temperature threshold of the schottky diode, if so, it is determined that the temperature of the schottky diode does not exceed the junction temperature threshold, it is determined that the selection of the schottky diode is appropriate, and if the target temperature corresponding to the nth iteration is greater than or equal to the junction temperature threshold, it is determined that the selection of the schottky diode is inappropriate. Therefore, whether the selection of the Schottky diode is proper or not can be determined by the scheme provided by the embodiment of the application.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice in the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the attached claims
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A method of determining whether a schottky diode is properly selected, the method comprising:
obtaining the target temperature of the Schottky diode after the temperature is increased through repeated iterative calculation;
in the multiple iteration processes, if the difference value between the target temperature corresponding to the nth iteration and the target temperature corresponding to the (n-1) th iteration is smaller than or equal to a first threshold value, judging whether the target temperature corresponding to the nth iteration is smaller than the junction temperature threshold value of the Schottky diode, and if the target temperature corresponding to the nth iteration is smaller than the junction temperature threshold value, determining that the Schottky diode is properly selected; and if the current value is larger than or equal to the preset value, determining that the selection of the Schottky diode is not suitable.
2. The method of claim 1, wherein the target temperature for the nth iteration is determined by:
calculating the forward heating power and the reverse heating power of the Schottky diode according to the working environment parameters of the Schottky diode and the device specification of the Schottky diode;
determining the rising temperature of the Schottky diode according to the forward heating power and the reverse heating power;
obtaining a target temperature corresponding to the nth iteration according to the first temperature and the rising temperature; the first temperature is a target temperature corresponding to the (n-1) th iteration.
3. The method of claim 2, wherein the environmental parameter comprises an output current of the schottky diode; the forward heating power of the Schottky diode is obtained by calculation according to the forward breakover voltage of the Schottky diode at the first temperature and the output current of the Schottky diode; the forward turn-on voltage of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
4. The method of claim 2, wherein the environmental parameter comprises an input voltage of the schottky diode, and a reverse thermal power of the schottky diode is calculated based on a leakage current of the schottky diode at the first temperature and the input voltage of the schottky diode; the leakage current of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
5. The method of claim 2, wherein said determining a rising temperature of said schottky diode from said forward and reverse heating power comprises:
and determining the rising temperature of the Schottky diode according to the forward heating power, the reverse heating power and the thermal resistance of the Schottky diode.
6. An apparatus for determining whether a schottky diode is properly selected, the apparatus comprising:
the iteration unit is used for obtaining the target temperature of the Schottky diode after the temperature is increased through multiple times of iterative calculation;
a judging unit, configured to, in the multiple iteration processes, if a difference between a target temperature corresponding to an nth iteration and a target temperature corresponding to an n-1 st iteration is less than or equal to a first threshold,
and judging whether the target temperature corresponding to the nth iteration is smaller than the junction temperature threshold of the Schottky diode, if so, determining that the Schottky diode is properly selected, and if so, determining that the Schottky diode is improperly selected.
7. The apparatus of claim 6, wherein the target temperature for the nth iteration is determined by:
calculating the forward heating power and the reverse heating power of the Schottky diode according to the working environment parameters of the Schottky diode and the device specification of the Schottky diode;
determining the rising temperature of the Schottky diode according to the forward heating power and the reverse heating power;
obtaining a target temperature corresponding to the nth iteration according to the first temperature and the rising temperature; the first temperature is a target temperature corresponding to the (n-1) th iteration.
8. The apparatus of claim 7, wherein the environmental parameter comprises an output current of the Schottky diode; the forward heating power of the Schottky diode is obtained by calculation according to the forward breakover voltage of the Schottky diode at the first temperature and the output current of the Schottky diode; the forward turn-on voltage of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
9. The apparatus of claim 7, wherein the environmental parameter comprises an input voltage of the schottky diode, and wherein the reverse thermal power of the schottky diode is calculated based on a leakage current of the schottky diode at the first temperature and the input voltage of the schottky diode; the leakage current of the Schottky diode at the first temperature is determined according to the device specification of the Schottky diode.
10. The apparatus of claim 7, wherein said determining a rising temperature of said schottky diode from said forward and reverse heating power comprises:
and determining the rising temperature of the Schottky diode according to the forward heating power, the reverse heating power and the thermal resistance of the Schottky diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910127024.6A CN109917261B (en) | 2019-02-20 | 2019-02-20 | Method and device for determining whether selection of Schottky diode is proper or not |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910127024.6A CN109917261B (en) | 2019-02-20 | 2019-02-20 | Method and device for determining whether selection of Schottky diode is proper or not |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109917261A CN109917261A (en) | 2019-06-21 |
| CN109917261B true CN109917261B (en) | 2021-06-18 |
Family
ID=66961863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910127024.6A Active CN109917261B (en) | 2019-02-20 | 2019-02-20 | Method and device for determining whether selection of Schottky diode is proper or not |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109917261B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179098A (en) * | 2006-11-10 | 2008-05-14 | 中国科学院合肥物质科学研究院 | Metal/gallium nitride aluminum /gallium nitride lateral direction schottky diode with low current collection side effect and method of producing the same |
| WO2010039284A1 (en) * | 2008-09-30 | 2010-04-08 | Youngstown State University | Silicon carbide barrier diode |
| CN102074508A (en) * | 2009-11-24 | 2011-05-25 | 上海华虹Nec电子有限公司 | Process for integrating Schottky diode in power MOS transistor |
| CN203013739U (en) * | 2012-12-07 | 2013-06-19 | 杭州士兰集成电路有限公司 | Schottky diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009037221A (en) * | 2007-07-06 | 2009-02-19 | Semiconductor Energy Lab Co Ltd | Light-emitting device, electronic device, and driving method of light-emitting device |
-
2019
- 2019-02-20 CN CN201910127024.6A patent/CN109917261B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179098A (en) * | 2006-11-10 | 2008-05-14 | 中国科学院合肥物质科学研究院 | Metal/gallium nitride aluminum /gallium nitride lateral direction schottky diode with low current collection side effect and method of producing the same |
| WO2010039284A1 (en) * | 2008-09-30 | 2010-04-08 | Youngstown State University | Silicon carbide barrier diode |
| CN102074508A (en) * | 2009-11-24 | 2011-05-25 | 上海华虹Nec电子有限公司 | Process for integrating Schottky diode in power MOS transistor |
| CN203013739U (en) * | 2012-12-07 | 2013-06-19 | 杭州士兰集成电路有限公司 | Schottky diode |
Non-Patent Citations (2)
| Title |
|---|
| SiC肖特基二极管的物理模型参数提取;方春恩等;《半导体技术》;20170630;第441-447页 * |
| Temperature dependent design of Silicon Carbide Schottky diodes;Rahul Radhakrishnan;《2014 IEEE Workshop on Wide Bandgap Power Devices and Applications》;20141124;第151-154页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109917261A (en) | 2019-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5278508B2 (en) | Battery degradation determination apparatus and method | |
| Oliver et al. | Hybrid wiener-hammerstein structure for grey-box modeling of dc-dc converters | |
| JP5794542B2 (en) | How to determine the maximum power point of a photoelectric generator | |
| Balasankar et al. | A global MPPT technique invoking partitioned estimation and strategic deployment of P&O to tackle partial shading conditions | |
| CN112994136B (en) | Temperature control method and device | |
| CN110556902B (en) | Charging method and direct current charging system | |
| CN107528320B (en) | Power distribution network distributed power supply permeability evaluation method based on continuous power flow | |
| US20160308438A1 (en) | Discrete narrow-band switching frequency avoidance of a switch mode power converter | |
| US9473012B2 (en) | Apparatus and method for controlling low voltage DC/DC converter by using input current information on low voltage DC/DC converter | |
| CN108736474B (en) | Power load prediction method and device | |
| KR101320743B1 (en) | Apparatus and Method for Controlling Charging/Discharging of Battery | |
| Ivanovic et al. | Analytical power losses model of boost rectifier | |
| CN109917261B (en) | Method and device for determining whether selection of Schottky diode is proper or not | |
| Gavagsaz‐Ghoachani et al. | Generalisation of an averaged model approach to estimate the period‐doubling bifurcation onset in power converters | |
| CN113595390A (en) | Boost chopper circuit, control method, electronic device, and storage medium | |
| CN109677299B (en) | Power distribution method and device for power output module and double-power output system | |
| CN110979210A (en) | Vehicle power supply system configuration method and device | |
| Jaafar et al. | Experimental validation with a control point of view analysis of the SEPIC converter | |
| CN109557474A (en) | A kind of modification method, device and the equipment of the state-of-charge of power battery | |
| CN114444306A (en) | Aluminum electrolytic capacitor life prediction method based on charging module task profile | |
| CN101655695B (en) | System and method for improving reliability of electronic device | |
| CN114183769A (en) | Control method and control device for gas proportional valve | |
| CN113343453B (en) | Modeling method of power electronic cascade converter based on small-step discretization | |
| CN108092504B (en) | Parameter determination method and device for Buck circuit | |
| CN104102754A (en) | System and method for optimizing tolerance design of power circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |