CN109917261A - A kind of whether suitable method and device of the selection of determining Schottky diode - Google Patents
A kind of whether suitable method and device of the selection of determining Schottky diode Download PDFInfo
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- CN109917261A CN109917261A CN201910127024.6A CN201910127024A CN109917261A CN 109917261 A CN109917261 A CN 109917261A CN 201910127024 A CN201910127024 A CN 201910127024A CN 109917261 A CN109917261 A CN 109917261A
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Abstract
This application discloses a kind of whether suitable method and devices of the selection of determining Schottky diode, specifically, the target temperature after Schottky diode temperature increases can be calculated by successive ignition, and when the difference between the corresponding target temperature of nth iteration target temperature corresponding with (n-1)th iteration is less than or equal to first threshold, then illustrate that the temperature of the Schottky diode does not rise not instead of always, approach is steady.In the embodiment of the present application, when the temperature of the Schottky diode tends to be steady, judge whether the corresponding target temperature of the nth iteration is less than the junction temperature threshold value of the Schottky diode, if it is, then illustrate that the temperature of the Schottky diode does not exceed the junction temperature threshold value, then illustrate that the selection of the Schottky diode is suitable, if it is not, then determining that the selection of Schottky diode is improper.So that it is determined that whether the selection of Schottky diode is suitable out.
Description
Technical field
This application involves vehicular fields, more particularly to a kind of whether suitable method of selection of determining Schottky diode
And device.
Background technique
There are many control units, such as mounted remote information manager (Telematics BOX, T- on vehicle at present
) and electronic control unit (Electronic Control Unit, ECU) Box.These control units work normally, and need power supply
Circuit is powered for it.In a power, DC-DC circuit structure is frequently included, and Schottky diode is DC-DC circuit structure
In important devices.Therefore, the selection of Schottky diode is particularly important, if Schottky diode selection is improper, such as makes
The temperature for obtaining Schottky diode is more than the device junction temperature threshold value of the Schottky diode, then will lead to Schottky diode damage
Bad, may result in power circuit can not work normally, further, may result in for example vehicle-mounted T-Box of control unit and
ECU can not work normally.
Therefore, how to determine whether the selection of Schottky diode is suitable, be current urgent problem.
Summary of the invention
Technical problems to be solved in this application are how to determine whether the selection of Schottky diode is suitable, provides one kind
Determine the whether suitable method and device of the selection of Schottky diode.
In a first aspect, the embodiment of the present application provides a kind of whether suitable method of selection of determining Schottky diode,
The described method includes:
The target temperature after Schottky diode temperature increases is calculated by successive ignition；
During the successive ignition, if the corresponding target temperature of nth iteration target corresponding with (n-1)th iteration
Difference between temperature is less than or equal to first threshold；Judge whether the corresponding target temperature of nth iteration is less than Xiao
The junction temperature threshold value of special based diode, if being less than, it is determined that the selection of the Schottky diode is suitable, and if more than or wait
In, it is determined that the selection of the Schottky diode is improper.
Optionally, the corresponding target temperature of nth iteration is determined as follows:
According to the device specification of the environmental parameter of Schottky diode work and the Schottky diode, institute is calculated
State the positive heating power and reversed heating power of Schottky diode；
The ascending temperature of the Schottky diode is determined according to the positive heating power and reversed heating power；
The corresponding target temperature of nth iteration is obtained according to the first temperature and the ascending temperature；First temperature is
The corresponding target temperature of (n-1)th iteration.
Optionally, the environmental parameter includes the output electric current of the Schottky diode；The Schottky diode
Positive heating power is forward conduction voltage and the Schottky according to the Schottky diode at a temperature of described first
What the output electric current of diode was calculated；Forward conduction voltage of Schottky diode at a temperature of described first is
It is determined according to the device specification of the Schottky diode.
Optionally, the environmental parameter includes the input voltage of the Schottky diode, the Schottky diode
Reversed heating power is leakage current and the Schottky diode according to the Schottky diode at a temperature of described first
Input voltage be calculated；Leakage current of Schottky diode at a temperature of described first is according to the Xiao Te
What the device specification of based diode determined.
Optionally, described that the upper of the Schottky diode is determined according to the positive heating power and reversed heating power
Rise temperature, comprising:
According to the thermal resistance of the positive heating power, the reversed heating power and the Schottky diode, determine
The ascending temperature of the Schottky diode.
Second aspect, the embodiment of the present application provide a kind of whether suitable device of selection of determining Schottky diode,
Described device includes:
Iteration unit, for the target temperature after Schottky diode temperature increases to be calculated by successive ignition；
Judging unit is used for during the successive ignition, if the corresponding target temperature of nth iteration and (n-1)th time
Difference between the corresponding target temperature of iteration is less than or equal to first threshold,
Judge whether the corresponding target temperature of nth iteration is less than the junction temperature threshold value of the Schottky diode, if being less than,
Then determine that the selection of the Schottky diode is suitable, and if more than or be equal to, it is determined that the choosing of the Schottky diode
It takes improper.
Optionally, the corresponding target temperature of nth iteration is determined as follows:
According to the device specification of the environmental parameter of Schottky diode work and the Schottky diode, institute is calculated
State the positive heating power and reversed heating power of Schottky diode；
The ascending temperature of the Schottky diode is determined according to the positive heating power and reversed heating power；
The corresponding target temperature of nth iteration is obtained according to the first temperature and the ascending temperature；First temperature is
The corresponding target temperature of (n-1)th iteration.
Optionally, the environmental parameter includes the output electric current of the Schottky diode；The Schottky diode
Positive heating power is forward conduction voltage and the Schottky according to the Schottky diode at a temperature of described first
What the output electric current of diode was calculated；Forward conduction voltage of Schottky diode at a temperature of described first is
It is determined according to the device specification of the Schottky diode.
Optionally, the environmental parameter includes the input voltage of the Schottky diode, the Schottky diode
Reversed heating power is leakage current and the Schottky diode according to the Schottky diode at a temperature of described first
Input voltage be calculated；Leakage current of Schottky diode at a temperature of described first is according to the Xiao Te
What the device specification of based diode determined.
Optionally, described that the upper of the Schottky diode is determined according to the positive heating power and reversed heating power
Rise temperature, comprising:
According to the thermal resistance of the positive heating power, the reversed heating power and the Schottky diode, determine
The ascending temperature of the Schottky diode.
Compared with prior art, the embodiment of the present application has the advantage that
The embodiment of the present application provides a kind of whether suitable method and device of selection of determining Schottky diode, specifically
The target temperature after Schottky diode temperature increases can be calculated by successive ignition, when the nth iteration pair in ground
When difference between the target temperature answered target temperature corresponding with (n-1)th iteration is less than or equal to first threshold,
Then illustrate that the temperature of the Schottky diode does not rise not instead of always, approach is steady.It is understood that if the Xiao Te
The temperature of based diode rises always, then Schottky diode after a period of work, temperature be likely to be more than institute
State the junction temperature threshold value of Schottky diode.In the embodiment of the present application, when the temperature of the Schottky diode tends to be steady,
Judge whether the corresponding target temperature of the nth iteration is less than the junction temperature threshold value of the Schottky diode, if it is, saying
The temperature of the bright Schottky diode does not exceed the junction temperature threshold value, then illustrates that the selection of the Schottky diode is to close
Suitable, if the corresponding target temperature of nth iteration is more than or equal to the junction temperature threshold value, it is determined that the Schottky diode
Selection it is improper.It can be seen that can determine the selection of Schottky diode using scheme provided by the embodiments of the present application
It is whether suitable.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in application, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 be a kind of determining Schottky diode provided by the embodiments of the present application choose whether the process of suitable method
Schematic diagram；
Fig. 2 is the flow diagram of the method for the corresponding target temperature of determining nth iteration provided by the embodiments of the present application；
Fig. 3 be a kind of determining Schottky diode provided by the embodiments of the present application choose whether the structure of suitable device
Schematic diagram.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, below in conjunction in the embodiment of the present application
Attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is only this
Apply for a part of the embodiment, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art exist
Every other embodiment obtained under the premise of creative work is not made, shall fall in the protection scope of this application.
Present inventor has found after study, and in traditional technology, the selection of Schottky diode is outstanding in power circuit
To be important, if Schottky diode selection is improper, such as the temperature of Schottky diode is made to be more than the Schottky diode
Device junction temperature threshold value, then will lead to Schottky diode damage, may result in power circuit can not work normally, further
Ground, may result in for example vehicle-mounted T-Box and ECU of control unit can not work normally.
In consideration of it, the embodiment of the present application provides the whether suitable method of selection and dress of a kind of determining Schottky diode
It sets, specifically, the target temperature after Schottky diode temperature increases can be calculated by successive ignition, when described n-th
Difference between the corresponding target temperature of secondary iteration target temperature corresponding with (n-1)th iteration is less than or equal to first
When threshold value, then illustrate that the temperature of the Schottky diode does not rise not instead of always, approach is steady.It is understood that if
The temperature of the Schottky diode rises always, then Schottky diode after a period of work, temperature is very possible
It can be more than the junction temperature threshold value of the Schottky diode.In the embodiment of the present application, when the temperature of the Schottky diode becomes
When steady, judge whether the corresponding target temperature of the nth iteration is less than the junction temperature threshold value of the Schottky diode, such as
Fruit is then to illustrate that the temperature of the Schottky diode does not exceed the junction temperature threshold value, then illustrates the Schottky diode
Selection be suitable, if the corresponding target temperature of nth iteration is more than or equal to the junction temperature threshold value, it is determined that Xiao
The selection of special based diode is improper.It can be seen that can determine Schottky two using scheme provided by the embodiments of the present application
Whether the selection of pole pipe is suitable.
It is understood that in practical applications, whether the selection of the Schottky diode in DC-DC circuit structure closes
It is suitable, not only need to consider whether the temperature of Schottky diode can be more than the junction temperature threshold value, it is also necessary to consider some other ginsengs
Number, such as the parameters such as rated current, voltage rating, reverse recovery time.The embodiment of the present application is mainly introduced according to Schottky two
The temperature of pole pipe whether can be more than the junction temperature threshold value this because the selection for usually judging Schottky diode it is whether suitable, for
Whether the selection of other parameters suitably judges, is not the emphasis of the embodiment of the present application, therefore is not detailed in this application.
With reference to the accompanying drawing, the various non-limiting embodiments of the application are described in detail.
Illustrative methods
Referring to Fig. 1, which is whether a kind of selection of determining Schottky diode provided by the embodiments of the present application is suitable
The flow diagram of method.
Method provided by the embodiments of the present application, such as can be realized by following steps S101-S102.
S101: the target temperature after Schottky diode temperature increases is calculated by successive ignition.
It should be noted that in the embodiment of the present application, the Schottky diode is to be placed in DC-DC circuit structure
Schottky diode.The embodiment of the present application does not limit the specific topological structure of the DC-DC circuit structure specifically.The DC-DC
The specific topological structure of circuit structure can be inductive type topological structure such as boost topological structure or buck topological structure.
The specific topological structure of the DC-DC circuit structure can be capacitive boost topology such as charge pump topology knot
Structure.
It should be noted that in the embodiment of the present application, the process that the successive ignition calculates, it can be understood as calculate Xiao
The process of target temperature after the temperature raising of special based diode during the work time.Since Schottky diode is worked
Temperature raising in journey gradually rises, and therefore, in the embodiment of the present application, by the way of successive ignition calculating, determines
Target temperature after the temperature raising of Schottky diode during the work time.
It should be noted that the corresponding target temperature of nth iteration, the Schottky two when starting equal to nth iteration
During the temperature and nth iteration of pole pipe the ascending temperature of the Schottky diode and.Described in when nth iteration starts
The temperature of Schottky diode is equal to the corresponding target temperature of (n-1)th iteration.1st Schottky two when iteration starts
The temperature of pole pipe is initial temperature.The embodiment of the present application does not limit the initial temperature specifically, and the initial temperature for example may be used
Think 85 DEG C.
S102: during the successive ignition, if the corresponding target temperature of nth iteration is corresponding with (n-1)th iteration
Target temperature between difference be less than or equal to first threshold,
Judge whether the corresponding target temperature of nth iteration is less than the junction temperature threshold value of the Schottky diode, if being less than,
Then determine that the selection of the Schottky diode is suitable, if more than or be equal to, it is determined that the selection of the Schottky diode
It is improper.
It is understood that in practical applications, if the temperature of the Schottky diode rises always, in Schottky
Diode operation for a period of time after, temperature is likely to the junction temperature threshold value more than the Schottky diode.And Ruo Xiaote
The temperature of based diode tends to be steady after rising a period of time, and after tending to be steady, the temperature of the Schottky diode
The junction temperature threshold value that (i.e. the corresponding target temperature of nth iteration) is lower than the Schottky diode is spent, then can determine Xiao
The temperature of special based diode does not exceed the junction temperature threshold value, indicates that the Schottky diode will not be in work to a certain extent
It is damaged during work since temperature is excessively high.
In consideration of it, in the embodiment of the present application, during the successive ignition, by judging that nth iteration is corresponding
Whether the difference between target temperature target temperature corresponding with (n-1)th iteration is less than or equal to the mode of first threshold,
Determine whether the temperature of the Schottky diode tends towards stability.If the corresponding target temperature of the nth iteration and (n-1)th time
Difference between the corresponding target temperature of iteration is less than or equal to first threshold, then it represents that the temperature of the Schottky diode
Whether tend towards stability.
It is understood that if the corresponding target temperature of nth iteration is corresponding with (n-1)th iteration after iteration is multiple
Target temperature between difference be greater than first threshold, then it represents that the constant temperature of the Schottky diode rises, accordingly
The selection that the Schottky diode can be characterized is improper.Alternatively, after iteration is multiple, the corresponding target temperature of nth iteration
Difference between target temperature corresponding with (n-1)th iteration is less than or equal to first threshold, and the corresponding mesh of nth iteration
The junction temperature threshold value that temperature is more than or equal to the Schottky diode is marked, then the selection for characterizing the Schottky diode does not conform to
It is suitable.
The embodiment of the present application does not limit the first threshold specifically, and as an example, the value of the first threshold can
Think 0.
The embodiment of the present application does not limit the junction temperature threshold value of the Schottky diode, the knot of the Schottky diode specifically
Warm threshold value can be determined according to the device specification of the Schottky diode.
As can be seen from the above description, whether a kind of selection of determining Schottky diode provided by the embodiments of the present application is suitable
Method, can by successive ignition be calculated Schottky diode temperature increase after target temperature, when the n-th changes
It is less than or equal to first threshold for the difference between corresponding target temperature target temperature corresponding with (n-1)th iteration
When, then illustrate that the temperature of the Schottky diode does not rise not instead of always, approach is steady.It is understood that if described
The temperature of Schottky diode rises always, then Schottky diode after a period of work, temperature is likely to surpass
Cross the junction temperature threshold value of the Schottky diode.In the embodiment of the present application, when the temperature of the Schottky diode tends to be flat
When steady, judge whether the corresponding target temperature of the nth iteration is less than the junction temperature threshold value of the Schottky diode, if
It is then to illustrate that the temperature of the Schottky diode does not exceed the junction temperature threshold value, then illustrates the Schottky diode
Selection is suitable, if the corresponding target temperature of nth iteration is more than or equal to the junction temperature threshold value, it is determined that the Xiao Te
The selection of based diode is improper.It can be seen that can determine two pole of Schottky using scheme provided by the embodiments of the present application
Whether the selection of pipe is suitable.
As described above, in the embodiment of the present application, Schottky diode temperature can be calculated by successive ignition
Target temperature after raising introduces the mode for determining the corresponding target temperature of nth iteration below by taking nth iteration as an example.
Referring to fig. 2, which is the stream of the method for the corresponding target temperature of determining nth iteration provided by the embodiments of the present application
Journey schematic diagram.
The method of the corresponding target temperature of determining nth iteration provided by the embodiments of the present application, such as can be by as follows
Step S201-S203 is realized.
S201: the device specification of the environmental parameter and the Schottky diode that are worked according to the Schottky diode,
Calculate the positive heating power and reversed heating power of the Schottky diode.
It should be noted that the embodiment of the present application does not limit the environmental parameter of the Schottky diode work specifically, make
For a kind of example, the environmental parameter for example may include the output electric current of the Schottky diode；As another example,
The environmental parameter may include the input voltage of the Schottky diode.
The device specification referred in the embodiment of the present application, for characterizing the hardware feature of the Schottky diode.It is described
Device specification can for example embody the corresponding leakage of reverse rated voltage, normal temperature, normal temperature of the Schottky diode
Electric current, forward conduction voltage, the mild thermal resistance of section etc..
In a kind of implementation of the embodiment of the present application, the specific topology knot of the DC-DC circuit structure described in the S101
When structure can be buck topological structure, the positive heating power of the Schottky diode can be according to two pole of Schottky
What the output electric current of forward conduction voltage and the Schottky diode of the pipe at a temperature of described first was calculated.
It should be noted that the output electric current of the Schottky diode referred in the embodiment of the present application, it can be according to described
The specifically used environment of Schottky diode determines.
In the embodiment of the present application, forward conduction voltage of Schottky diode at a temperature of described first, can be with
It is determined according to the device specification of the Schottky diode, specifically, the Xiao Te can be calculated by following formula (1)
Forward conduction voltage of based diode at a temperature of described first.
VF=VF (25 DEG C)+A Δ T formula (1)
Wherein:
VF indicates forward conduction voltage of Schottky diode at a temperature of described first；
(25 DEG C) of VF indicate forward conduction voltage of the Schottky diode at 25 DEG C, and VF (25 DEG C) can be according to institute
The device specification for stating Schottky diode determines, specifically, can pass through the device specification specification of the Schottky diode
Determine the VF (25 DEG C)；
A is constant, is demarcated according to the device specification of the Schottky diode；For example, can be according to the Xiao Te
The forward conduction voltage of based diode-forward conduction electric current VF-IFCurve demarcates constant A；
Δ T is the difference of the first temperature with 25 DEG C.
In a kind of implementation of the embodiment of the present application, the specific topology knot of the DC-DC circuit structure described in the S101
When structure can be buck topological structure, the reversed heating power of the Schottky diode can be according to two pole of Schottky
The input voltage of leakage current and the Schottky diode of the pipe at a temperature of described first is calculated.
It should be noted that the input voltage of the Schottky diode referred in the embodiment of the present application, it can be according to described
The specifically used environment of Schottky diode determines.
In the embodiment of the present application, leakage current of Schottky diode at a temperature of described first, can be according to institute
The device specification for stating Schottky diode determines.Specifically, the Xiao Te can be calculated by following formula (2) and formula (3)
Leakage current of based diode at a temperature of described first.
IR1=IR (25 DEG C) * B^ (Δ T/10) formula (2)
IR2=IR (VR) * C^ Δ VR formula (3)
Wherein:
IR1Indicate leakage current of the Schottky diode at the first temperature and reverse rated voltage；
(25 DEG C) of IR indicate leakage current of the Schottky diode under 25 DEG C and reverse rated voltage；
Δ T is the difference of the first temperature with 25 DEG C；
B is constant, is demarcated according to the device specification of the Schottky diode；For example, can be according to the Xiao Te
The backward voltage of based diode-leakage current VR-IRCurve demarcates constant B；
IR2Indicate leakage current of the Schottky diode at the first temperature and input voltage；As for calculating
The leakage current of reversed heating power；
IR (VR) indicates leakage current of the Schottky diode at the first temperature and reverse rated voltage；
C is constant, is demarcated according to the device specification of the Schottky diode；For example, can be according to the Xiao Te
The backward voltage of based diode-leakage current VR-IRCurve demarcates constant C；
Δ VR indicates the difference between the reverse rated voltage and the input voltage of Schottky diode.
It is understood that the leakage current that is calculated of formula (2) in view of the difference between the first temperature and 25 DEG C and
The variation of caused leakage current, the leakage current that formula (3) calculates consider not only the difference between the first temperature and 25 DEG C and lead
The variation of the leakage current of cause, it is also contemplated that between the input voltage in reverse rated voltage and Schottky diode actual use
Difference caused by leakage current variation.
S202: the rising of the Schottky diode is determined according to the positive heating power and the reversed heating power
Temperature.
In the embodiment of the present application, S202 is in specific implementation, it is contemplated that the temperature of rising not only with heating power (including
Positive heating power and reversed heating power) it is related, also related with the thermal resistance of Schottky diode, therefore, S202 is specific real
Now, the upper heating of the Schottky diode can be determined according to the positive heating power and the reversed heating power
Degree.Specifically, total heating power can be obtained according to positive heating power and reversed heating power, total heating power is multiplied
With the thermal resistance, the ascending temperature of the Schottky diode is obtained.
S203: the corresponding target temperature of nth iteration, first temperature are obtained according to the first temperature and the ascending temperature
Degree is the corresponding target temperature of (n-1)th iteration.
After obtaining the ascending temperature of Schottky diode, the ascending temperature is added into first temperature, can be obtained
To the corresponding target temperature of the nth iteration.
About the method that above embodiments provide, determining Xiao provided by the embodiments of the present application is introduced below in conjunction with specific data
The whether suitable method of the selection of special based diode.
Understood in combination with the following table 1.
Table 1
In table 1, STEP indicates that the number of iteration, temperature Tj indicate Schottky diode when each iteration starts
Temperature；The forward conduction voltage (being calculated using formula (1)) of VF (V) expression Schottky diode；Leakage current (mA) table
Show the leakage current of Schottky diode, can be calculated according to formula (2) and formula (3).
As it can be seen from table 1 temperature rises 9.073 DEG C in the 1st iteration (corresponding STEP 0)；Second of iteration is (corresponding
STEP 1), temperature rises 0.284 DEG C；Third time iteration (corresponding STEP 2), temperature rises 0.014 DEG C；4th time iteration is (right
Answer STEP 3), temperature rises 0.001 DEG C；Then each iteration temperature rises 0 DEG C, such as the corresponding target temperature of the 5th iteration
Difference between the corresponding target temperature of the 4th iteration is 0, is less than first threshold, it is determined that the temperature of Schottky diode
It tends to be steady, it at this time can be by judging the junction temperature threshold value of the corresponding target temperature of the 5th iteration and the Schottky diode
Size relation, it is whether suitable with the selection of the determination Schottky diode.For example, the junction temperature threshold of the Schottky diode
Value is 125 DEG C, and 94.371 DEG C of the corresponding target temperature of the 5th iteration is less than 125 DEG C, therefore judges the Schottky diode
It is suitable to choose.
Example devices
Based on the method that above embodiments provide, the embodiment of the present application also provides a kind of devices, are situated between below in conjunction with attached drawing
Continue the device.
Referring to Fig. 3, which is whether a kind of selection of determining Schottky diode provided by the embodiments of the present application is suitable
The structural schematic diagram of device.
The whether suitable device of the selection of determining Schottky diode provided by the embodiments of the present application, such as can specifically wrap
It includes: iteration unit 310 and judging unit 320.
Iteration unit 310, for the target temperature after Schottky diode temperature increases to be calculated by successive ignition；
Judging unit 320 is used for during the successive ignition, if the corresponding target temperature of nth iteration and (n-1)th
Difference between the corresponding target temperature of secondary iteration is less than or equal to first threshold, judges the corresponding target temperature of nth iteration
Whether degree is less than the junction temperature threshold value of the Schottky diode, if being less than, it is determined that and the selection of the Schottky diode is suitable,
And if more than or be equal to, it is determined that the selection of the Schottky diode is improper.
Optionally, the corresponding target temperature of nth iteration is determined as follows:
According to the device specification of the environmental parameter of Schottky diode work and the Schottky diode, institute is calculated
State the positive heating power and reversed heating power of Schottky diode；
The ascending temperature of the Schottky diode is determined according to the positive heating power and reversed heating power；
The corresponding target temperature of nth iteration is obtained according to the first temperature and the ascending temperature；First temperature is
The corresponding target temperature of (n-1)th iteration.
Optionally, the environmental parameter includes the output electric current of the Schottky diode；The Schottky diode
Positive heating power is forward conduction voltage and the Schottky according to the Schottky diode at a temperature of described first
What the output electric current of diode was calculated；Forward conduction voltage of Schottky diode at a temperature of described first is
It is determined according to the device specification of the Schottky diode.
Optionally, the environmental parameter includes the input voltage of the Schottky diode, the Schottky diode
Reversed heating power is leakage current and the Schottky diode according to the Schottky diode at a temperature of described first
Input voltage be calculated；Leakage current of Schottky diode at a temperature of described first is according to the Xiao Te
What the device specification of based diode determined.
Optionally, described that the upper of the Schottky diode is determined according to the positive heating power and reversed heating power
Rise temperature, comprising:
According to the thermal resistance of the positive heating power, the reversed heating power and the Schottky diode, determine
The ascending temperature of the Schottky diode.
Since described device 300 is the corresponding device of method provided with above method embodiment, described device 300 it is each
The specific implementation of a unit is same design with above method embodiment, accordingly, with respect to each unit of described device 300
Specific implementation, can refer to above method embodiment description section, details are not described herein again.
As can be seen from the above description, whether a kind of selection of determining Schottky diode provided by the embodiments of the present application is suitable
Device, can by successive ignition be calculated Schottky diode temperature increase after target temperature, when the n-th changes
It is less than or equal to first threshold for the difference between corresponding target temperature target temperature corresponding with (n-1)th iteration
When, then illustrate that the temperature of the Schottky diode does not rise not instead of always, approach is steady.It is understood that if described
The temperature of Schottky diode rises always, then Schottky diode after a period of work, temperature is likely to surpass
Cross the junction temperature threshold value of the Schottky diode.In the embodiment of the present application, when the temperature of the Schottky diode tends to be flat
When steady, judge whether the corresponding target temperature of the nth iteration is less than the junction temperature threshold value of the Schottky diode, if
It is then to illustrate that the temperature of the Schottky diode does not exceed the junction temperature threshold value, then illustrates the Schottky diode
Selection is suitable, if the corresponding target temperature of nth iteration is more than or equal to the junction temperature threshold value, it is determined that the Xiao Te
The selection of based diode is improper.It can be seen that can determine two pole of Schottky using scheme provided by the embodiments of the present application
Whether the selection of pipe is suitable.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to its of the application
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the application, these modifications, purposes or
Person's adaptive change follows the general principle of the application and including the undocumented common knowledge in the art of the disclosure
Or conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the application are by following
Claim is pointed out.
It should be understood that the application is not limited to the precise structure that has been described above and shown in the drawings, and
And various modifications and changes may be made without departing from the scope thereof.Scope of the present application is only limited by the accompanying claims
The foregoing is merely the preferred embodiments of the application, not to limit the application, it is all in spirit herein and
Within principle, any modification, equivalent replacement, improvement and so on be should be included within the scope of protection of this application.
Claims (10)
1. a kind of whether suitable method of the selection of determining Schottky diode, which is characterized in that the described method includes:
The target temperature after Schottky diode temperature increases is calculated by successive ignition；
During the successive ignition, if the corresponding target temperature of nth iteration target temperature corresponding with (n-1)th iteration
Between difference be less than or equal to first threshold, judge whether the corresponding target temperature of nth iteration is less than the Schottky
The junction temperature threshold value of diode, if being less than, it is determined that the selection of the Schottky diode is suitable；And if more than or be equal to, then
Determine that the selection of the Schottky diode is improper.
2. the method according to claim 1, wherein the corresponding target temperature of nth iteration is in the following way
It determines:
According to the device specification of the environmental parameter of Schottky diode work and the Schottky diode, Xiao is calculated
The positive heating power and reversed heating power of special based diode；
The ascending temperature of the Schottky diode is determined according to the positive heating power and reversed heating power；
The corresponding target temperature of nth iteration is obtained according to the first temperature and the ascending temperature；First temperature is (n-1)th
The corresponding target temperature of secondary iteration.
3. according to the method described in claim 2, it is characterized in that, the environmental parameter includes the defeated of the Schottky diode
Electric current out；The positive heating power of the Schottky diode, be according to the Schottky diode at a temperature of described first
Forward conduction voltage and the output electric current of the Schottky diode be calculated；The Schottky diode is described
Forward conduction voltage at a temperature of one is determined according to the device specification of the Schottky diode.
4. according to the method described in claim 2, it is characterized in that, the environmental parameter includes the defeated of the Schottky diode
Enter voltage, the reversed heating power of the Schottky diode, be according to the Schottky diode at a temperature of described first
Leakage current and the input voltage of the Schottky diode be calculated；The Schottky diode is in first temperature
Under leakage current, be according to the device specification of the Schottky diode determine.
5. according to the method described in claim 2, it is characterized in that, described according to the positive heating power and reversed fever function
Rate determines the ascending temperature of the Schottky diode, comprising:
According to the thermal resistance of the positive heating power, the reversed heating power and the Schottky diode, determine described in
The ascending temperature of Schottky diode.
6. a kind of whether suitable device of the selection of determining Schottky diode, which is characterized in that described device includes:
Iteration unit, for the target temperature after Schottky diode temperature increases to be calculated by successive ignition；
Judging unit is used for during the successive ignition, if the corresponding target temperature of nth iteration and (n-1)th iteration
Whether the difference between corresponding target temperature is less than or equal to first threshold,
Judge whether the corresponding target temperature of nth iteration is less than the junction temperature threshold value of the Schottky diode, if being less than, really
The selection of the fixed Schottky diode is suitable, and if more than or be equal to, it is determined that the selection of the Schottky diode is not
Properly.
7. device according to claim 6, which is characterized in that the corresponding target temperature of nth iteration is in the following way
It determines:
According to the device specification of the environmental parameter of Schottky diode work and the Schottky diode, Xiao is calculated
The positive heating power and reversed heating power of special based diode；
The ascending temperature of the Schottky diode is determined according to the positive heating power and reversed heating power；
The corresponding target temperature of nth iteration is obtained according to the first temperature and the ascending temperature；First temperature is (n-1)th
The corresponding target temperature of secondary iteration.
8. device according to claim 7, which is characterized in that the environmental parameter includes the defeated of the Schottky diode
Electric current out；The positive heating power of the Schottky diode, be according to the Schottky diode at a temperature of described first
Forward conduction voltage and the output electric current of the Schottky diode be calculated；The Schottky diode is described
Forward conduction voltage at a temperature of one is determined according to the device specification of the Schottky diode.
9. device according to claim 7, which is characterized in that the environmental parameter includes the defeated of the Schottky diode
Enter voltage, the reversed heating power of the Schottky diode, be according to the Schottky diode at a temperature of described first
Leakage current and the input voltage of the Schottky diode be calculated；The Schottky diode is in first temperature
Under leakage current, be according to the device specification of the Schottky diode determine.
10. device according to claim 7, which is characterized in that described according to the positive heating power and reversed fever
Power determines the ascending temperature of the Schottky diode, comprising:
According to the thermal resistance of the positive heating power, the reversed heating power and the Schottky diode, determine described in
The ascending temperature of Schottky diode.
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