CN109911839B - Microelectrode capable of inhibiting optical noise, circuit using microelectrode and preparation method of microelectrode - Google Patents
Microelectrode capable of inhibiting optical noise, circuit using microelectrode and preparation method of microelectrode Download PDFInfo
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Abstract
A microelectrode capable of suppressing optical noise, a circuit using the microelectrode and a preparation method thereof are provided. In a microelectrode structure using silicon as a supporting material, silicon as a substrate generates unbalanced carriers due to illumination, and then causes disturbance to electrode signals on the upper layer. The silicon substrate used as the electrode support is grounded through doping, growing a metal layer and etching a through hole on the insulating layer on the metal layer, so that the signal interference of photogenerated carriers in the silicon substrate on the upper nerve electrode can be greatly reduced or eliminated, and the noise interference of light on the silicon-based microelectrode, particularly on the lightly doped silicon substrate, is effectively solved.
Description
Technical Field
The invention relates to the technical field of microsensors, in particular to a microelectrode capable of inhibiting optical noise, a circuit adopting the microelectrode and a preparation method of the microelectrode.
Background
Silicon-based microelectrodes are important tools for neuroscience research, and silicon is generally used as a substrate, so that the silicon-based microelectrodes play a supporting role in a device, an upper layer is a traditional sandwich electrode structure of an insulating layer, a metal conductor and an insulating layer, and the silicon substrate and the metal electrode are separated by the insulating layer, so that a schematic diagram is shown in fig. 2.
Because of the small size of microelectrodes, the lateral dimensions are typically on the order of tens to hundreds of microns, with very weak signals being recorded. In the use process of the silicon-based microelectrode, due to the sensitivity of the silicon substrate to light, unbalanced carriers generated by the light in the silicon substrate can influence electrode signals, and when the light exists, the electrode light noise is very large. Silicon is one of the most mature materials for current micromachining applications, its mechanical strength is comparable to stainless steel, and it can be integrated with electrical circuits, and is the main research direction at present or even in the future. The silicon-based microelectrode inevitably has light participation in the use process, and early researches show that the common silicon electrode only used for recording can generate light noise under the fluorescent lamp and even indoor light in daytime, and the amplitude is large, and some conditions can directly lead to signal loss. In addition, as one of tools for stimulating microelectrodes, the study of photoelectrodes combined with optogenetics is particularly important, wherein silicon electrodes are required to be used together with various light sources, and in order to ensure stable stimulation and recording performance of photoelectrode devices, the problem of optical noise of silicon-based microelectrodes is very urgent.
Disclosure of Invention
In order to at least partially solve the problem of optical noise of the silicon-based microelectrode, the invention provides a silicon-based microelectrode structure capable of inhibiting the optical noise.
According to an aspect of the present invention, there is provided a microelectrode capable of suppressing optical noise, characterized by comprising a substrate, a grounded metal layer, a lower insulating layer, an electrode layer and an upper insulating layer, wherein:
the substrate is made of a semiconductor material capable of generating photo-generated carriers under the illumination condition, preferably silicon, germanium and gallium arsenide materials, and further preferably a silicon substrate;
the grounding metal layer is not electrically connected with the electrode layer.
The combination part of the substrate and the grounding metal layer has doping concentration which can form good ohmic contact with metal;
preferably, the position of the grounding metal layer is on the front surface, the back surface or the inside of the substrate.
Wherein the grounding metal layer is prepared from chromium, titanium, gold, titanium-gold alloy, chromium-gold alloy, graphene or amorphous carbon.
When the grounding metal layer is used, the grounding metal layer is connected with the ground of the amplifying circuit through the grounding through hole.
According to another aspect of the present invention, there is provided a method for producing a microelectrode capable of suppressing optical noise, comprising the steps of:
A. a bulk doping concentration of less than 10 16 cm -3 Forming a surface doping concentration of greater than 10 on a lightly doped substrate of (2) 18 cm -3 Is a heavily doped substrate structure; the substrate can be used under the illumination conditionSemiconductor materials that generate photogenerated carriers are preferably prepared using silicon, germanium, gallium arsenide materials, and more preferably using silicon;
B. forming a gridded ground layer on the substrate structure obtained in the step A;
C. growing a lower insulating layer on the substrate structure obtained in the step B;
D. adopting positive photoresist as mask alignment overlay, adopting a dry etching method to remove the lower insulating layer above the grounding hole, exposing the grounding hole and removing the surface photoresist;
E. forming a metal line structure on the lower insulating layer obtained in the step D through photoetching of photoetching marks alignment;
F. e, growing an upper insulating layer on the metal line structure obtained in the step;
G. and (3) aligning and overlaying by adopting positive photoresist, then carrying out dry etching by using the photoresist as a mask, etching out a recording point and a pad disc required by gold wire pressure welding, and finally cleaning the photoresist to finish the preparation of the silicon-based microelectrode capable of inhibiting optical noise.
In the step A, the lightly doped substrate is an N-type lightly doped substrate with the resistivity of 1-10Ω & cm;
in the step A, the step of forming the substrate structure with the heavily doped surface is realized by high-concentration ion diffusion or implantation;
preferably, the surface of the surface heavily doped substrate has a diffusion concentration of 10 18 cm -3 Is 300nm in diffusion depth;
preferably, in the step B, the step of forming the gridded ground layer is to form a required blank gridding shape by adopting negative photoresist to make photoetching on the substrate, vacuum evaporating a metal layer, and then removing the photoresist to obtain the gridded metal ground layer;
preferably, the metal layer deposited is Cr/Au/Cr, and the thickness is 12nm/150nm/12nm, respectively.
In the step C, the step of growing the lower insulating layer is realized by chemical vapor deposition PECVD;
preferably, the lower insulating layer is SiO 2 /Si x N y The thickness of the composite film is 500nm;
preferably, in the step E, negative photoresist is adopted for alignment lithography to form a blank metal line morphology, then a metal layer is formed by evaporation, photoresist is stripped in acetone, and the metal line structure is formed after cleaning;
preferably, the metal layer formed by evaporation is Cr/Au/Cr, and the thickness is 12nm/150nm/12nm;
preferably, in the step F, siO is used as the upper insulating layer 2 /Si x N y /SiO 2 Composite membrane structure =200 nm/700nm/200 nm.
Wherein, still include step H:
H. scribing the prepared substrate according to the size of the electrode, fixing the electrode on a prepared PCB, leading out an electrode press welding point pad disc, and grounding a grounding layer on the substrate through a metal wire, thereby achieving the purpose of reducing optical noise.
According to still another aspect of the present invention, there is also provided a microelectrode produced by the production method of a microelectrode capable of suppressing optical noise as described above.
According to still another aspect of the present invention, there is also provided a circuit employing the microelectrode capable of suppressing optical noise as described above.
From the above technical scheme, the method for preparing the silicon-based microelectrode has the following beneficial effects:
(1) The lightly doped silicon chip is adopted as the substrate, so that the advantages of good flexibility of the lightly doped silicon, integration with a CMOS circuit, low cost and the like are well utilized;
(2) Considering the application scene of the silicon electrode used in combination with light, the signal to noise ratio of the photoelectrode recording signal can be improved by a method of reducing the noise of the silicon electrode caused by light, and the stability of the electrode is improved; the silicon substrate used as the electrode support is grounded through doping, growing a metal layer and etching a through hole on an insulating layer on the metal layer, so that the signal interference of photogenerated carriers in the silicon substrate on an upper nerve electrode can be greatly reduced or eliminated, and the noise interference of light on the silicon-based microelectrode, particularly on a lightly doped silicon substrate, is effectively solved;
(3) The vertical structure of the silicon electrode collecting signal and the characteristic that the electrode interface is directly contacted with the measured object are unpacked, so that the capability of the silicon electrode for resisting optical noise interference is enhanced on the basis of meeting the condition;
(4) On the basis of the MEMS mature process, the purpose of reducing noise is achieved by improving the electrode structure, and the electrode structure is more beneficial to popularization to various electrode structures based on the planar process.
Drawings
FIG. 1 is a schematic structural diagram of a silicon-based microelectrode with light interference resistance according to the present invention;
FIG. 2 is a schematic structural diagram of a prior art silicon-based microelectrode;
FIG. 3 is a flow chart of method steps for fabricating a silicon-based microelectrode for suppressing optical noise according to one embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a silicon-based microelectrode for suppressing optical noise according to one embodiment of the present invention.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. In the drawings or description, like or identical parts are provided with the same reference numerals. Implementations not shown or described in the drawings are forms known to those of ordinary skill in the art. Additionally, although the present disclosure may provide examples of parameters including particular values, it should be appreciated that the parameters need not be exactly equal to the corresponding values, but may approximate the corresponding values within acceptable error margins or design constraints.
The electrode for inhibiting the optical noise mainly adopts a grounding conduction method, and unbalanced minority carriers generated in the silicon substrate are collected through the metal layer and then are conducted away through grounding, so that the influence on upper electrode signals is avoided. The invention verifies through experimental method contrast that the novel silicon-based electrode structure can effectively inhibit the generation of optical noise, and improves the signal-to-noise ratio of the electrode acquisition signal.
The silicon-based microelectrode structure capable of suppressing optical noise is shown in figure 1. In a microelectrode structure using silicon as a supporting material, silicon as a substrate generates unbalanced carriers due to illumination, and then causes disturbance to electrode signals on the upper layer. The silicon substrate used as electrode support is grounded by doping, growing a metal layer and etching a through hole on the insulating layer, so that noise interference caused by light to the silicon-based microelectrode, especially to the lightly doped silicon substrate, can be greatly reduced or eliminated.
Specifically, the invention discloses a novel electrode structure which is directly based on a mature MEMS technology and is added with a grounding layer on a lightly doped substrate and led out to be grounded, so as to inhibit the optical noise of a silicon-based microelectrode, and the test effect is similar to the optical noise characteristic of the electrode of a heavily doped substrate.
In an exemplary embodiment of the present invention, a method for preparing a novel electrode structure for reducing optical noise is shown in fig. 3, and a specific experimental process structure is shown in fig. 4, where the method of the present embodiment includes:
A. silicon wafer is selected, and high-concentration ion on the surface is diffused or injected. For example, an N-type lightly doped silicon wafer having a size of 4 inches, a thickness of 300 μm, and a resistivity of 1 to 10 Ω cm is selected, and in order to ensure good electrical contact characteristics between the substrate and the underlying layer, a concentration of 1×10 is first diffused on the surface of the substrate 18 cm -3 The diffusion depth is 300nm, and a substrate structure with heavily doped surface is formed;
B. forming a gridded ground layer. Carrying out one-time photoetching on a substrate by adopting negative photoresist AR-4340 to form a required blank grid shape, carrying out vacuum evaporation on a metal layer Cr/Au/Cr=12 nm/150nm/12nm, then soaking and stripping in acetone, and washing to form a grid-shaped metal layer;
PECVD is used for growing a lower insulating layer. Considering the compactness problem of PECVD grown insulating layer, the type of the insulating layer is set as SiO 2 /Si x N y The thickness of the composite film is 500nm;
D. positive photoresist maskAnd aligning and etching the grounding hole. Alignment and overlay are carried out by using positive photoresist AR-4620, and then a dry etching method is adopted to remove the SiO of the composite film above the grounding hole 2 /Si x N y Exposing the ground hole and removing the surface photoresist;
E. and (5) aligning photoetching to form a metal line structure. Firstly, adopting negative photoresist AR-4340 to align and photoetching to form a blank metal line shape, then evaporating a metal layer Cr/Au/Cr=12 nm/150nm/12nm, soaking and stripping in acetone, and cleaning to form an electrode line structure;
and F, PECVD (plasma enhanced chemical vapor deposition) growing an upper insulating layer. Due to stress problems in PECVD grown insulating layers, siO is generally used 2 For compressive stress, si grown x N y Can be expressed as compressive stress or tensile stress according to the different conditions of the nature, concentration, air pressure and the like of the mixed gas, so that the upper insulating layer adopts SiO in order to balance the stress problem among films according to the previous research results of the inventor 2 /Si x N y /SiO 2 Composite membrane structure =200 nm/700nm/200 nm.
G. And aligning positive photoresist, and etching the electrode structure by a dry method. And (3) performing final alignment and alignment by adopting positive photoresist AR-4620, performing dry etching by taking photoresist as a mask, etching out a recording point and PAD required by gold wire pressure welding, and finally cleaning the photoresist to complete the whole process preparation flow of the novel electrode of the lightly doped substrate for reducing the optical noise.
H. And (5) dicing and packaging. Scribing the prepared 4 inch piece according to the size of the electrode, fixing the electrode on a prepared PCB, leading out an electrode PAD, particularly paying attention to the electrode PAD point corresponding to a grounding hole, and grounding the whole electrode substrate through a metal wire during testing, thereby achieving the purpose of reducing optical noise.
In one embodiment, the method for preparing the silicon-based microelectrode for suppressing optical noise comprises the following steps: the bulk doping concentration is less than 10 16 cm -3 Carrying out high-concentration ion diffusion on the lightly doped silicon substrate to form a silicon substrate with low surface resistivity; spin-coating photoresist on a substrate, exposing a desired metal by photolithographyIs a part of (2); growing a metal layer, and then patterning the metal layer by stripping, wherein the metal layer is not exposed at the edge of the electrode needle body; growing an insulating layer on the pattern, spin-coating photoresist, performing alignment, and etching the insulating layer to expose a grounding hole to be led out; spin-coating photoresist, forming a line shape by photoetching, growing metal, and stripping electrode lines; and growing an upper insulating layer, aligning and overlaying, cleaning photoresist, forming a novel electrode structure, packaging the electrode on a PCB, leading out a substrate grounding point through a pressure welding point PAD, connecting the substrate grounding point with the ground of an amplifier, and testing to obtain the silicon-based microelectrode structure capable of inhibiting optical noise.
Thus, the description of the present embodiment is completed. The fabrication of silicon-based microelectrode structures that suppress optical noise according to the present invention should be clearly recognized by those skilled in the art in light of the foregoing description.
Furthermore, it should be noted that the above definition of each element is not limited to the specific structures or shapes mentioned in the embodiments, and those skilled in the art can easily and well substitute the same, for example:
(1) The type of the ground metal layer may vary and may be chromium, titanium, gold, titanium gold alloy, chromium gold alloy, graphene or amorphous carbon.
(2) The thickness of the grounding metal layer can be changed and can be any thickness;
(3) The thickness of the lower insulating layer can be changed and can be any thickness;
(4) The doping concentration of the substrate can vary and can be greater than 10 18 cm -3 Any of the above.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the invention thereto, but to limit the invention thereto, and any modifications, equivalents, improvements and equivalents thereof may be made without departing from the spirit and principles of the invention.
Claims (8)
1. A microelectrode capable of suppressing optical noise, comprising a substrate, a grounding metal layer, a lower insulating layer, an electrode layer and an upper insulating layer, wherein:
the substrate is prepared from a semiconductor material capable of generating photo-generated carriers under the illumination condition, wherein the semiconductor material is selected from silicon, germanium and gallium arsenide materials;
the grounding metal layer is not electrically connected with the electrode layer;
the silicon substrate is grounded by doping, growing a grounding metal layer and etching a through hole on the lower insulating layer, and the grounding metal layer is connected with the ground of the amplifying circuit through the grounding through hole when in use.
2. The microelectrode capable of suppressing optical noise according to claim 1, wherein the region where the substrate is bonded to the grounded metal layer has a doping concentration capable of forming good ohmic contact with the metal;
the grounding metal layer is positioned on the front surface, the back surface or the inside of the substrate.
3. The microelectrode capable of suppressing optical noise according to claim 2, wherein the grounding metal layer is made of chromium, titanium, gold, titanium-gold alloy, chromium-gold alloy, graphene or amorphous carbon.
4. The preparation method of the microelectrode capable of inhibiting optical noise is characterized by comprising the following steps of:
A. a bulk doping concentration of less than 10 16 cm -3 Forming a surface doping concentration of greater than 10 on a lightly doped substrate of (2) 18 cm -3 Is a heavily doped substrate structure; the substrate is prepared from a semiconductor material capable of generating photo-generated carriers under the condition of illumination, and the semiconductor material is selected from silicon, germanium and gallium arsenide materials;
B. forming a gridded ground layer on the substrate structure obtained in the step A;
C. growing a lower insulating layer on the substrate structure obtained in the step B;
D. adopting positive photoresist as mask alignment overlay, adopting a dry etching method to remove the lower insulating layer above the grounding hole, exposing the grounding hole and removing the surface photoresist;
E. forming a metal line structure on the lower insulating layer obtained in the step D through photoetching of photoetching marks alignment;
F. e, growing an upper insulating layer on the metal line structure obtained in the step;
G. aligning and overlaying by adopting positive photoresist, then carrying out dry etching by using the photoresist as a mask, etching out a recording point and a pad disc required by gold wire pressure welding, and finally cleaning the photoresist to finish the preparation of the microelectrode capable of inhibiting optical noise;
the lightly doped substrate is an N-type lightly doped substrate with resistivity of 1-10Ω & ltcm >
in the step A, the step of forming the substrate structure with the heavily doped surface is realized by high-concentration ion diffusion or implantation;
the surface of the substrate with the heavily doped surface has a diffusion concentration of 10 18 cm -3 Is 300nm in diffusion depth;
in the step B, the step of forming the gridding grounding layer is to form a required blank gridding shape by photoetching negative photoresist on a substrate, vacuum evaporating a metal layer, and then removing the photoresist to obtain the gridding metal grounding layer;
the evaporated metal layer is Cr/Au/Cr, and the thickness is 12nm/150nm/12nm respectively.
5. The method of claim 4, wherein in the step C, the step of growing the lower insulating layer is performed by chemical vapor deposition PECVD;
the lower insulating layer is SiO 2 /Si x N y The thickness of the composite film is 500nm;
in the step E, negative photoresist is adopted for alignment photoetching to form a blank metal line shape, then a metal layer is formed by evaporation, photoresist is stripped in acetone, and the metal line structure is formed after cleaning;
the metal layer formed by evaporation is Cr/Au/Cr, and the thickness is 12nm/150nm/12nm;
in the step F, the upper insulating layer is made of SiO 2 /Si x N y /SiO 2 Composite membrane structure =200 nm/700nm/200 nm.
6. The method of claim 4, further comprising the step of H:
H. scribing the prepared substrate according to the size of the electrode, fixing the electrode on a prepared PCB, leading out an electrode press welding point pad disc, and grounding a grounding layer on the substrate through a metal wire, thereby achieving the purpose of reducing optical noise.
7. A microelectrode capable of suppressing optical noise produced by the method for producing a microelectrode capable of suppressing optical noise as claimed in any one of claims 4 to 6.
8. A circuit employing the microelectrode capable of suppressing optical noise as claimed in any one of claims 1 to 3 and 7.
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| CN101168435A (en) * | 2007-11-29 | 2008-04-30 | 上海交通大学 | Method for manufacturing three-dimensional nerve microelectrode |
| WO2014185771A2 (en) * | 2013-05-17 | 2014-11-20 | Mimos Berhad | A capacitive humidity sensor |
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| JP3532788B2 (en) * | 1999-04-13 | 2004-05-31 | 唯知 須賀 | Semiconductor device and manufacturing method thereof |
| JP2001210841A (en) * | 2000-01-24 | 2001-08-03 | Sumitomo Electric Ind Ltd | Optical communication equipment |
| JP3925809B2 (en) * | 2004-03-31 | 2007-06-06 | カシオ計算機株式会社 | Semiconductor device and manufacturing method thereof |
| KR100640065B1 (en) * | 2005-03-02 | 2006-10-31 | 삼성전자주식회사 | MIM capacitor comprising ground shield layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101168435A (en) * | 2007-11-29 | 2008-04-30 | 上海交通大学 | Method for manufacturing three-dimensional nerve microelectrode |
| WO2014185771A2 (en) * | 2013-05-17 | 2014-11-20 | Mimos Berhad | A capacitive humidity sensor |
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