CN109904188B - Flexible WIFI signal energy converter based on perovskite diode and preparation method thereof - Google Patents
Flexible WIFI signal energy converter based on perovskite diode and preparation method thereof Download PDFInfo
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Abstract
The invention discloses perovskite diode-based flexibleA WIFI signal energy converter and a preparation method thereof relate to the field of microwave semiconductors; the perovskite diode comprises a P-type layer, a perovskite layer and an N-type layer which are arranged in parallel, wherein the perovskite layer adopts organic/inorganic hybrid ABX3A cubic crystal structure of the type wherein A is an organic amine group, B is a metal of the fourth main group, and X is a monohalogen element or a combination of multiple halogen elements; the invention solves the problem that the prior flexible energy converter adopting the organic diode has low signal energy conversion efficiency due to poor rectification capability caused by low semiconductor mobility, and achieves the effects of improving the signal rectification capability and promoting high-efficiency energy conversion.
Description
Technical Field
The invention relates to the field of energy converters, in particular to a flexible WIFI signal energy converter based on a perovskite diode and a preparation method thereof.
Background
Due to the rise of wearable technology, the power supply problem of wearable equipment needs to be solved urgently, and the currently used solar power supply is limited by factors such as low power generation efficiency and weather; the flexible microwave energy converter is in a thin film form, and has the advantages of thin thickness, light weight, flexibility, changeable area and the like; for example, patent application No. CN201510760260.3, entitled flexible microwave energy converter based on organic diodes, includes: the flexible microwave energy converter based on the organic diode is characterized by comprising a positive electrode, a negative electrode, an organic diode, a capacitor and a resistor, wherein the positive electrode and the negative electrode have the functions of an antenna to collect microwave signals in a space environment and charge the capacitor; the substrate, the capacitor, the resistor and the organic diode are all made of organic materials, and have the advantages of thin thickness, light weight, flexibility, changeable area and the like; the energy converter can be applied to remote power supply of devices, sensing detection of microwave signals, non-contact identity authentication and the like, but the organic diode semiconductor adopted by the energy converter is low in mobility, so that the rectification capability is low, and the energy conversion efficiency of signals is low. On the other hand, in life, WIFI is relatively popular in various big cities, so that the WIFI signal can be used for supplying power to the flexible device.
Disclosure of Invention
The invention aims to: the invention provides a flexible WIFI signal energy converter based on a perovskite diode and a preparation method thereof, and solves the problem that the existing flexible energy converter adopting an organic diode is poor in rectification capacity due to low semiconductor mobility, so that the signal energy conversion efficiency is low.
The technical scheme adopted by the invention is as follows:
the flexible WIFI signal energy converter based on the perovskite diode comprises a flexible substrate, a first antenna arm, a second antenna arm, a wire, a patch resistor, a patch capacitor, an insulating layer and the perovskite diode for improving the signal rectification capacity, wherein the perovskite diode comprises a P-type layer, a perovskite layer and an N-type layer which are arranged in parallel, and the perovskite layer is made of an organic/inorganic hybrid ABX3A cubic crystal structure of the type wherein A is an organic amine group, B is a metal of the fourth main group, and X is a monohalogen element or a combination of multiple halogen elements;
first antenna arm, second antenna arm, wire, P type layer, perovskite layer, N type layer, chip resistor, chip capacitor all are located on the flexible substrate, chip resistor and chip capacitor are connected with first antenna arm and second antenna arm after through wire parallel connection, first antenna arm and second antenna arm are located P type layer and N type layer both sides respectively, the insulating layer covers on P type layer, N type layer, perovskite layer, first antenna arm and second antenna arm, and first antenna arm and second antenna arm extend the insulating layer.
Preferably, the material of the flexible substrate is polyethylene terephthalate (PET) or Polyimide (PI).
Preferably, the material of the insulating layer includes one or more of Polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), Polyimide (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), Polystyrene (PS), Polytetrafluoroethylene (PTFE).
Preferably, the materials of the first antenna arm, the second antenna arm and the conducting wire comprise one or more of conductive ink, PEDOT PSS, gold, aluminum and ITO.
Preferably, the material of the P-type layer comprises one or more of pentacene, copper phthalocyanine, aromatic diamine compounds, aromatic triamine compounds, carbazole compounds, star triphenylamine compounds, furan compounds, spiral structure compounds or polymer materials; the material of the N-type layer comprises any one or more of C60, 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, oxadiazole electron transport material 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, or imidazole electron transport material 1, 3, 5-tris (N-phenyl-2-benzimidazole-2) benzene.
A method for preparing a flexible WIFI signal energy converter based on a perovskite diode comprises the following steps:
1) sequentially putting the flexible substrate PI into an ethanol, acetone and deionized water solution for ultrasonic cleaning for 20min, and drying by using nitrogen after cleaning;
2) preparing a first antenna arm, a second antenna arm and a lead on the cleaned flexible substrate;
3) preparing a perovskite diode in a vacuum thermal evaporation mode between the manufactured first antenna arm and the manufactured second antenna arm, wherein the perovskite diode comprises a P-type layer, a perovskite layer and an N-type layer, and the perovskite layer is ABX3500nm, vacuum degree below 8X 10-3 Pascal, wherein A is organic amine group, B is fourth main group metal, and X is monohalogen element or combination of multiple halogen elements;
4) preparing an insulating layer above the prepared perovskite layer in a spin coating mode;
5) and pasting the chip resistor and the chip capacitor at the vacant position of the lead.
Preferably, the material of the flexible substrate is polyethylene terephthalate (PET) or Polyimide (PI).
Preferably, the material of the insulating layer (6) includes one or more of polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), Polyimide (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), Polystyrene (PS), Polytetrafluoroethylene (PTFE).
Preferably, the materials of the first antenna arm, the second antenna arm and the conducting wire comprise one or more of conductive ink, PEDOT: PSS, gold, aluminum and ITO, and the method for preparing the first antenna arm, the second antenna arm and the conducting wire comprises one or more of photoetching, printing, vacuum evaporation and magnetron sputtering.
Preferably, the material of the P-type layer comprises one or more of pentacene, copper phthalocyanine, aromatic diamine compounds, aromatic triamine compounds, carbazole compounds, star triphenylamine compounds, furan compounds, spiral structure compounds or polymer materials; the material of the N-type layer comprises any one or more of C60, 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, oxadiazole electron transport material 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, or imidazole electron transport material 1, 3, 5-tris (N-phenyl-2-benzimidazole-2) benzene.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. according to the WIFI signal energy converter, the perovskite diode is adopted to prepare the WIFI signal energy converter, the perovskite material improves the carrier mobility, the microwave rectification capacity is improved, the problem that the existing flexible energy converter adopting the organic diode is low in signal energy conversion efficiency due to poor rectification capacity caused by low semiconductor mobility is solved, and the effects of improving the signal rectification capacity and promoting efficient energy conversion are achieved;
2. according to the flexible WIFI signal energy converter based on the perovskite diode, the receiving antenna made of metal can be used for receiving WIFI signals of the surrounding environment, and the energy of the WIFI signals is converted into electric energy to be stored in the capacitor; the organic substrate, the chip capacitor, the chip resistor and the perovskite diode are all made of flexible materials, and have the advantages of being thin in thickness, light in weight, bendable, capable of changing the area according to needs and the like.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic diagram of an energy converter according to the present invention;
FIG. 2 is a cross-sectional view of the present invention taken along the dashed line;
FIG. 3 is a schematic structural diagram of a flexible signal energy converter based on organic diode fabrication;
FIG. 4 is a schematic view of a test mount connection according to an embodiment of the present invention;
reference numerals: 1-flexible substrate, 201-first antenna arm, 202-second antenna arm, 203-lead, 3-perovskite diode, 4-patch resistor, 5-patch capacitor, 6-insulating layer, 301-P type layer, 302-perovskite layer, 303-N type layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The technical problem is as follows: the problem that the existing flexible energy converter adopting an organic diode is poor in rectification capacity due to low semiconductor mobility, so that the signal energy conversion efficiency is low is solved;
the technical means is as follows: flexible WIFI signal energy converter based on perovskite diode includes flexible substrate 1, first antenna arm 201, second antenna arm 202, wire 203, chip resistor 4, chip capacitor 5 and insulating layer 6, its characterized in that: the perovskite diode 3 is used for improving the signal rectification capacity, the perovskite diode 3 comprises a P-type layer 301, a perovskite layer 302 and an N-type layer 303 which are arranged in parallel, and the perovskite layer 302 is made of an organic/inorganic hybrid ABX3A cubic crystal structure of the type wherein A is an organic amine group, B is a metal of the fourth main group, and X is a monohalogen element or a combination of multiple halogen elements;
the first antenna arm 201, the second antenna arm 202, the wire 203, the P-type layer 301, the perovskite layer 302, the N-type layer 303, the chip resistor 4 and the chip capacitor 5 are all located on the flexible substrate 1, the chip resistor 4 and the chip capacitor 5 are connected in parallel through the wire 203 and then connected with the first antenna arm 201 and the second antenna arm 202, the first antenna arm 201 and the second antenna arm 202 are located on two sides of the P-type layer 301 and the N-type layer 303 respectively, the insulating layer 6 covers the P-type layer 301, the N-type layer 303, the perovskite layer 302, the first antenna arm 201 and the second antenna arm 202, and the insulating layer 6 extends out of the first antenna arm 201 and the second antenna arm 202.
The flexible substrate 1 is made of polyethylene terephthalate (PET) or Polyimide (PI).
The material of the insulating layer 6 includes one or more of polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), Polyimide (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), Polystyrene (PS), and Polytetrafluoroethylene (PTFE).
The first antenna arm 201, the second antenna arm 202, the wire 203 comprise one or more of conductive ink, PEDOT: PSS, gold, aluminum, ITO.
The material of the P-type layer 301 comprises one or more of pentacene, copper phthalocyanine, aromatic diamine compounds, aromatic triamine compounds, carbazole compounds, star triphenylamine compounds, furan compounds, spiral structure compounds or polymer materials; the material of the N-type layer 303 includes any one or more of C60, 2- (4-diphenyl-5-4-tert-butylphenyl-1, 3, 4-oxadiazole, oxadiazole electron transport material 2-4-diphenyl-5-4-tert-butylphenyl-1, 3, 4-oxadiazole, or imidazole electron transport material 1, 3, 5-tri-N-phenyl-2-benzimidazole-2 benzene.
1) Sequentially putting the flexible substrate 1 into an ethanol, acetone and deionized water solution for ultrasonic cleaning for 20min, and drying by using nitrogen after cleaning;
2) preparing a first antenna arm 201, a second antenna arm 202 and a wire 203 on the cleaned flexible substrate 1;
3) preparing a perovskite diode 3 between the manufactured first antenna arm 201 and the second antenna arm 202 in a vacuum thermal evaporation mode, wherein the perovskite diode 3 comprises a P-type layer 301, a perovskite layer 302 and an N-type layer 303, and the perovskite layer 302ABX3500nm, vacuum degree below 8X 10-3 Pascal, wherein A is organic amine group, B is fourth main group metal,x is a mono-halogen element or a combination of multi-halogen elements;
4) preparing an insulating layer 6 above the prepared perovskite layer 302 by means of spin coating;
5) and attaching the chip resistor 4 and the chip capacitor 5 to the vacant position of the lead 203.
The method for preparing the first antenna arm, the second antenna arm and the conducting wire comprises one or more of photoetching, printing, vacuum evaporation and magnetron sputtering.
The technical effects are as follows: according to the WIFI signal energy converter, the perovskite diode is adopted to prepare the WIFI signal energy converter, the perovskite material improves the carrier mobility, the signal rectification capacity is improved, the problem that the existing flexible energy converter adopting the organic diode is low in signal energy conversion efficiency due to poor rectification capacity caused by low semiconductor mobility is solved, and the effects of improving the signal rectification capacity and promoting efficient energy conversion are achieved; the flexible WIFI signal energy converter based on the perovskite diode adopts a receiving antenna made of metal and can be used for receiving WIFI signals of the surrounding environment, and the energy of the WIFI signals is converted into electric energy to be stored in a capacitor; the organic substrate, the chip capacitor, the chip resistor and the perovskite diode are all made of flexible materials, and have the advantages of being thin in thickness, light in weight, bendable, capable of changing the area according to needs and the like.
The features and properties of the present invention are described in further detail below with reference to examples.
Example 1
As shown in fig. 1, the flexible WIFI signal energy converter based on the perovskite diode includes: the perovskite diode 3 is used for improving the signal rectification capacity, the perovskite diode 3 comprises a P-type layer 301, a perovskite layer 302 and an N-type layer 303 which are arranged in parallel, and the perovskite layer 302 is made of organic/inorganic hybrid ABX3A type cubic crystal structure, wherein A is an organic amine group, B is a metal of the fourth main group, and X is a single halogen element or a combination of multiple halogen elements, such as the first antenna arm 201, the second antenna arm 202, the conductive wire 203, the P-type layer 301, the perovskite layer 302, the second antenna arm 202, the second antenna arm B, the third antenna arm B, the fourth antenna arm B, and the fourth antenna arm B shown in FIG. 1-2,The N-type layer 303, the chip resistor 4 and the chip capacitor 5 are all located on the flexible substrate 1, the chip resistor 4 and the chip capacitor 5 are connected in parallel through a wire 203 and then connected with the first antenna arm 201 and the second antenna arm 202, the first antenna arm 201 and the second antenna arm 202 are located on two sides of the P-type layer 301 and the N-type layer 303 respectively, the insulating layer 6 covers the P-type layer 301, the N-type layer 303, the perovskite layer 302, the first antenna arm 201 and the second antenna arm 202, and the insulating layer 6 extends out of the first antenna arm 201 and the second antenna arm 202.
The first antenna arm 201 and the second antenna arm 202 can convert microwave signals in the surrounding environment into electric signals, the perovskite diode 3 rectifies the microwave signals, and the patch resistor 4 and the patch capacitor 5 can store the signals received by the antennas and can be connected with an external circuit to reflect actual information.
The method for preparing the flexible WIFI signal energy converter based on the perovskite diode comprises the following steps:
1) sequentially putting the flexible substrate 1 into an ethanol, acetone and deionized water solution for ultrasonic cleaning for 20min, and drying by using nitrogen after cleaning;
2) preparing a layer of metal aluminum on the cleaned flexible substrate 1 in a magnetron sputtering mode, wherein the working pressure of magnetron sputtering is 0.2 pascal, the sputtering power is 160 watts, and the deposition time is 20 minutes;
3) spin-coating a layer of photoresist at a spin-coating speed of 6000 rpm for 60 seconds, and forming a first antenna arm 201, a second antenna arm 202 and a wire 203 by exposure, photoresist removal and corrosion after drying;
4) preparing a P-type layer 301, a perovskite layer 302 and an N-type layer 303 by vacuum thermal evaporation between the prepared first antenna arm 201 and the second antenna arm 202, wherein the P-type layer 301 adopts copper phthalocyanine and the vacuum degree is 8 multiplied by 10-3The evaporation rate is less than pascal and is 0.2 angstrom/second; wherein the perovskite layer 302 adopts CH3NH3I and PbI2Preparation of CH by mixed steaming3NH3PbI3Layer, vacuum degree 3X 10-4Pascal or less; wherein the N-type layer 303 adopts C60 with vacuum degree of 3 × 10-4The evaporation rate is below 0.1 angstrom/second;
5) preparing an insulating layer 6 above the prepared perovskite diode 3 in a spin coating mode, wherein the insulating layer 6 is made of PVA, the spin coating speed is 4500 rpm, and the spin coating time is 60 seconds;
6) and attaching the chip resistor 4 and the chip capacitor 5 to the vacant position of the lead 203.
The prepared device is put into a lead box, a lead 203 is connected with a semiconductor analyzer, a wireless router is started, the current in the circuit is recorded, the connection schematic diagram is shown in fig. 4, the current in the circuit recorded in the embodiment 1 is compared with the current generated by a flexible WIFI signal energy converter prepared by an organic diode under the same connection condition (the preparation method of the flexible WIFI signal energy converter prepared by the organic diode is characterized in that a P-type layer 301 and an N-type layer 303 are prepared by a vacuum thermal evaporation mode between a first antenna arm 201 and a second antenna arm 202 which are prepared by the organic diode, wherein the P-type layer 301 is made of copper phthalocyanine, and the vacuum degree is 8 multiplied by 10-3The evaporation rate is less than pascal and is 0.2 angstrom/second; wherein the N-type layer 303 adopts C60 with vacuum degree of 3 × 10-4The evaporation rate is below 0.1 angstrom/second; and preparing an insulating layer 6 above the prepared PN junction in a spin coating mode.
Table 1 flexible WIFI signal energy converter performance parameter table based on different materials and structures
According to table 1 (table 1 is a performance parameter table of a flexible WIFI signal energy converter based on different materials and structures), it can be known that, compared with a flexible WIFI signal energy converter based on an organic diode (a structure diagram is shown in fig. 3), the current of the flexible WIFI signal energy converter based on the perovskite diode 3 is larger, the perovskite material carrier mobility of the perovskite diode is large, and the rectification level of the device is greatly improved.
Example 2
Based on example 1, the preparation process of the present application differs as follows:
n-type layer303 TPBi is adopted, and the obtained current is 3.53 multiplied by 10-6A; according to the current value, the current of the flexible WIFI signal energy converter prepared based on the perovskite diode is larger than that of the flexible WIFI signal energy converter prepared based on the organic diode under the same WIFI signal; different N-type layer materials are adopted, so that the carrier mobility is promoted to be improved, the rectification level of the device is improved, and the energy is converted efficiently.
Example 3
Based on example 1, the preparation process of the present application differs as follows:
TAPC was used for the P-type layer 301, and the current obtained was 4.53X 10-7A; according to the current value, the current value of the flexible WIFI signal energy converter prepared based on the perovskite diode 3 is different from that of the flexible WIFI signal energy converter prepared based on the organic diode under the same WIFI signal; different P type layer materials are adopted to influence the carrier mobility, so that the rectification level of the device and the conversion efficiency of the device are influenced.
Example 4
Based on example 3, the perovskite layer 302 was mixed-steamed with CH3NH3Br and PbBr2 to prepare a CH3NH3PbBr3 layer, and the obtained current was 1.59X 10-6A; according to the current value, the current of the flexible WIFI signal energy converter prepared based on the perovskite diode 3 is larger than that of the flexible WIFI signal energy converter prepared based on the organic diode under the same WIFI signal; with different perovskite layer materials, the carrier mobility is inconsistent, thereby affecting the rectification level of the device.
Example 5
The current drawn for the insulating layer PMMA was 4.34X 10, compared with example 4-6A; according to the current value, the current of the flexible WIFI signal energy converter prepared based on the perovskite diode 3 is larger than that of the flexible WIFI signal energy converter prepared based on the organic diode under the same WIFI signal; with different insulating layer materials, the carrier mobility is inconsistent, thereby affecting the rectification level and energy conversion efficiency of the device.
Example 6
Compared with example 5The first antenna arm 201, the second antenna arm 202 and the conducting wire 203 are made of silver materials, and the obtained current is 2.95 multiplied by 10-6A; according to the current value, compared with the flexible WIFI signal energy converter prepared based on the organic diode, the flexible WIFI signal energy converter prepared based on the perovskite diode 3 has inconsistent current under the same WIFI signal; with different materials for the first antenna arm 201, the second antenna arm 202 and the conducting wire 203, the carrier mobility is not uniform, thereby affecting the rectification level and the energy conversion efficiency of the device.
Other materials can be replaced by other materials according to practical conditions, for example, the material of the flexible substrate is PET, the material of the insulating layer can also be one or more of BCB, PS and PVP, the material of the first antenna arm, the second antenna arm and the conducting wire is one or more of gold, conductive ink and aluminum, and the material of the P-type layer, the perovskite layer and the N-type layer can be selected similarly, which is only a preferred embodiment of the present invention and is not used to limit the present invention.
Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. Flexible WIFI signal energy converter based on perovskite diode includes flexible substrate (1), first antenna arm (201), second antenna arm (202), wire (203), chip resistor (4), chip capacitor (5) and insulating layer (6), its characterized in that: the perovskite diode (3) is used for improving the signal rectification capacity, the perovskite diode (3) comprises a P-type layer (301), a perovskite layer (302) and an N-type layer (303) which are arranged in parallel, and the perovskite layer (302) is made of organic/inorganic hybrid ABX3A cubic crystal structure of the type wherein A is an organic amine group, B is a metal of the fourth main group, and X is a monohalogen element or a combination of multiple halogen elements;
the antenna comprises a first antenna arm (201), a second antenna arm (202), a wire (203), a P-type layer (301), a perovskite layer (302), an N-type layer (303), a chip resistor (4) and a chip capacitor (5) which are all located on a flexible substrate (1), wherein the chip resistor (4) and the chip capacitor (5) are connected with the first antenna arm (201) and the second antenna arm (202) through the wire (203) in parallel, the first antenna arm (201) and the second antenna arm (202) are respectively located on two sides of the P-type layer (301) and the N-type layer (303), an insulating layer (6) covers the P-type layer (301), the N-type layer (303), the perovskite layer (302), the first antenna arm (201) and the second antenna arm (202), and the first antenna arm (201) and the second antenna arm (202) extend out of the insulating layer (6).
2. The flexible perovskite diode-based WIFI signal energy converter of claim 1, wherein: the flexible substrate (1) is made of polyethylene terephthalate (PET) or Polyimide (PI).
3. A flexible WIFI signal energy converter based on perovskite diodes as claimed in claim 1 or 2 wherein: the material of the insulating layer (6) comprises one or more of polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), Polyimide (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), Polystyrene (PS) and Polytetrafluoroethylene (PTFE).
4. A flexible WIFI signal energy converter based on perovskite diodes according to claim 1 characterized by: the first antenna arm (201), the second antenna arm (202) and the conducting wire (203) comprise one or more of conductive ink, PEDOT: PSS, gold, aluminum and ITO.
5. The flexible perovskite diode-based WIFI signal energy converter of claim 1, wherein: the material of the P-type layer (301) comprises one or more of pentacene, copper phthalocyanine, aromatic diamine compounds, aromatic triamine compounds, carbazole compounds, star triphenylamine compounds, furan compounds, spiral structure compounds or polymer materials; the material of the N-type layer (303) comprises any one or more of C60, 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, oxadiazole electron transport material 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, or imidazole electron transport material 1, 3, 5-tri (N-phenyl-2-benzimidazole-2) benzene.
6. A method of manufacturing a flexible WIFI signal energy converter based on a perovskite diode as defined in any one of claims 1 to 5, wherein: the method comprises the following steps:
1) sequentially putting the flexible substrate (1) into ethanol, acetone and deionized water solution for ultrasonic cleaning for 20min, and drying by using nitrogen after cleaning;
2) preparing a first antenna arm (201), a second antenna arm (202) and a lead (203) on the cleaned flexible substrate (1);
3) preparing a perovskite diode (3) in a vacuum thermal evaporation mode between the manufactured first antenna arm (201) and the second antenna arm (202), wherein the perovskite diode (3) comprises a P-type layer (301), a perovskite layer (302) and an N-type layer (303), and the perovskite layer (302) is ABX3500nm, vacuum degree below 8X 10-3 Pascal, wherein A is organic amine group, B is fourth main group metal, and X is monohalogen element or combination of multiple halogen elements;
4) preparing an insulating layer (6) above the prepared perovskite layer (302) in a spin coating mode;
5) and pasting the chip resistor (4) and the chip capacitor (5) at the vacant position of the lead (203).
7. The method of claim 6, wherein: the flexible substrate (1) is made of polyethylene terephthalate (PET) or Polyimide (PI).
8. The method according to claim 6 or 7, characterized in that: the material of the insulating layer (6) comprises one or more of polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), Polyimide (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), Polystyrene (PS) and Polytetrafluoroethylene (PTFE).
9. The method according to claim 6 or 7, characterized in that: the materials of the first antenna arm (201), the second antenna arm (202) and the conducting wire (203) comprise one or more of conductive ink, PEDOT: PSS, gold, aluminum and ITO, and the method for preparing the first antenna arm, the second antenna arm and the conducting wire comprises one or more of photoetching, printing, vacuum evaporation and magnetron sputtering.
10. The method according to claim 6 or 7, characterized in that: the material of the P-type layer (301) comprises one or more of pentacene, copper phthalocyanine, aromatic diamine compounds, aromatic triamine compounds, carbazole compounds, star triphenylamine compounds, furan compounds, spiral structure compounds or polymer materials; the material of the N-type layer (303) comprises any one or more of C60, 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, oxadiazole electron transport material 2- (4-diphenyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, or imidazole electron transport material 1, 3, 5-tri (N-phenyl-2-benzimidazole-2) benzene.
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| CN105610524A (en) * | 2015-11-06 | 2016-05-25 | 中国计量学院 | Organic flexible film microwave signal detector and manufacture method thereof |
| CN106656245A (en) * | 2016-09-09 | 2017-05-10 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | WiFi data transmission system and WiFi data transmission method capable of acquiring energy by means of back scattering |
| CN107507918A (en) * | 2017-08-30 | 2017-12-22 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105610524A (en) * | 2015-11-06 | 2016-05-25 | 中国计量学院 | Organic flexible film microwave signal detector and manufacture method thereof |
| CN106656245A (en) * | 2016-09-09 | 2017-05-10 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | WiFi data transmission system and WiFi data transmission method capable of acquiring energy by means of back scattering |
| CN107507918A (en) * | 2017-08-30 | 2017-12-22 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method thereof |
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